KR100464306B1 - Field emission display and manufacturing method of the same - Google Patents

Abstract

A spacer manufacturing method of a field emission display device according to the present invention includes a front substrate and a back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A spacer provided in a non-pixel region outside the unit pixel to maintain a distance between the front substrate and the rear substrate, comprising: (a) a first silicon having a crystal plane of (110) Depositing silicon oxide on both sides of the substrate; (B) patterning the silicon oxide by forming and exposing a photoresist on the silicon oxide; And (c) patterning the first silicon substrate by anisotropic etching using the patterned silicon oxide as a mask to form a spacer perpendicular to the front substrate and the back substrate.

Accordingly, there is an advantage in that a fine and fine aspect ratio spacer and a field emission display device are provided by using a difference in etching speed according to a crystal surface of a silicon substrate.

Description

Field emission display and manufacturing method thereof [Field emission display and manufacturing method of the same}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a field emission display device, and more particularly, to a field emission display device manufactured by using a difference in etching speed according to a crystal plane of a silicon substrate, and a method of manufacturing the spacer.

The field emission display device employs a microtip that emits electrons in a vacuum under a high electric field, and has been applied to various industrial devices and flat panel display devices that use electrons.

In particular, in the field of flat panel display devices, field emission display devices using field effects have attracted much attention as the next generation display devices following liquid crystal display devices and plasma display devices.

Currently, high vacuum packaging technology has been actively researched and developed for the practical use of the field emission display device, but research and development of sufficiently stable processes and materials have not been achieved as a review stage of various processes and materials.

1 is a schematic perspective view of a conventional field emission display device, and FIG. 2 is a schematic cross-sectional view of a conventional field emission display device.

1 and 2, a plurality of stripe-shaped cathodes 2 are formed side by side on the surface of the back substrate 1, and an insulator layer 3 having holes 3 ′ formed thereon is formed on the cathode 2. And a metal gate 4 formed thereon to have an opening 4 'corresponding to the hole 3' of the insulator layer 3, the bottom of the hole 3 ', i.e., the exposed cathode ( On the surface of 2) a conical micro tip 2 'is formed.

In particular, the conventional spacer 8 is formed in a columnar shape by a method of screen printing a glass paste on a local region of the front substrate 7 on which the anode 6 on the stripe and the phosphor 5 are coated, and then the cathode (2), the microtip 2 ', the insulator layer 3, and the gate 4 are formed by adhering to the back substrate 1 on which they are formed.

On the other hand, on the inner surface of the front substrate 7 which maintains a constant distance from the rear substrate 1 by the spacer 8, a large number of anodes 6 are formed side by side in the direction orthogonal to the cathode 2, and the anode On (6), phosphor 5 is applied.

With the above structure, the portion where the cathode 2 and the anode 6 intersect becomes a unit pixel. The spacer 8 is positioned at a portion where the cathode 2 and the anode 6 do not cross, i.e., the non-pixel region. The spacer 8 is formed on the inner surface of the front substrate 7 corresponding to the non-pixel region by a multi-screen printing method using a paste.

At the edges of the front substrate 7 and the rear substrate 1, a sealing portion 9 is formed to close the internal space in the vacuum state of the front substrate 7 and the rear substrate 1.

In addition, a glass stick 9 'having a height of a spacer is formed to prevent invasion into the inside of the panel when the sealing glass 9 made of frit glass material is applied for glass sealing. .

Thus, the conventional spacer 8 installed to serve only as a support was made by screen printing a glass paste several times using a mask 10, as shown in FIG.

However, according to this screen printing method, the viscosity and curing time of the frit glass during screen printing are obtained in order to obtain a spacer having a desired diameter or width because the printed frit glass flows down during the solidification process, that is, it spreads out of the printed area. And the like should be considered.

In particular, the spacer cannot be obtained by one screen printing, but by several times, for example, by seven or more screen printings.

As described above, during the process of the multi-screen printing, the width becomes narrower as the printing proceeds due to the flow of the fritted glass, etc. After that, the next printing should be carried out.

In conclusion, according to the screen printing method using glass paste, it is difficult to obtain a spacer having a desired dimension, and the time required for this is long. Then, as the paste glass is cured, the above-mentioned flow appears, or due to the misalignment of the screen mask with respect to the front substrate during the printing process, the support target surface of the spacer 8, that is, the width of the front substrate versus the spacer It is very difficult to set an aspect ratio (height / width) that is a ratio with respect to the height of 1 or more.

Meanwhile, in the case of a spacer having a high aspect ratio due to the high-precision of a glass material having a spherical shape, the portion occupied by the spacer due to the increase of the diameter increases with the increase in the height, and was developed to compensate for the disadvantage thereof. It is difficult to form a high aspect ratio fiber evenly in a large area.

In addition, the method of fixing and fixing a high-definition spacer made of a ceramic material on the front substrate is a spacer that is fine and fine because the spacer does not interfere with the operation of the existing phosphor portion or the electron gun portion, and the portion that can be formed is several tens of micrometers or less. It is difficult to process it, and when developing a high quality field emission display device, such an area is further reduced, so there is a difficulty in use.

In addition, when the spacer is formed on the front substrate or the rear substrate with balls or fibers, damage to the phosphor and oxidation of the electron emission source may occur due to outgasing, thereby making it difficult to drive the field emission display device. have.

On the other hand, a conventional diamond-like planar electron beam source, which is advantageous for low electron emission voltage, has a difficult problem in manufacturing a field emission display device having a triode structure having a cathode, an anode, and a gate electrode.

The present invention has been made to solve the above problems, and an object thereof is to provide a field emission display device and a spacer manufacturing method using the difference in the etching rate according to the crystal plane of the silicon substrate.

In order to achieve the above object, a method of manufacturing a spacer of a field emission display device according to the present invention includes a front substrate and a rear substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A spacer provided in a non-pixel region outside the unit pixel to maintain a distance between the front substrate and the rear substrate, comprising: (a) a first silicon having a crystal plane of (110) Depositing silicon oxide on both sides of the substrate; (B) patterning the silicon oxide by forming and exposing a photoresist on the silicon oxide; And (c) patterning the first silicon substrate by anisotropic etching using the patterned silicon oxide as a mask to form a spacer perpendicular to the front substrate and the back substrate.

According to the present invention, in the step (a), it is preferable to form the silicon oxide on the upper and lower surfaces of the first silicon substrate, respectively, by thermal oxidation.

According to the present invention, in the step (c), the first silicon substrate is etched by wet etching, and the crystal surface of the patterned first silicon substrate is preferably a (111) plane.

According to the present invention, the spacers are formed by bonding the patterned first silicon substrates by etching the first silicon substrates, respectively, and the height of the spacers is controlled by the thickness of the first silicon substrates and the plurality of the first silicon substrates. It is preferable to bond and control a silicon substrate.

In addition, the field emission display device according to the present invention in order to achieve the above object, the front substrate and the back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; And a spacer disposed in the non-pixel region outside the unit pixel to maintain a distance between the front substrate and the rear substrate, wherein the spacer is adhered to the non-pixel regions of the front substrate and the rear substrate, respectively. Insulating layer; And a silicon layer formed integrally between the insulating layers and doped with impurities such that the electron beam focusing part is inclinedly exposed on an outer surface thereof.

According to the present invention, the silicon layer is bisected and joined in a trapezoidal cross section, and the insulating layer is preferably formed of silicon oxide.

In addition, in order to achieve the above object, a spacer manufacturing method of a field emission display device according to another type of the present invention, the front substrate and the back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A method of manufacturing a spacer of a field emission display device comprising: (a) a second silicon having a crystal plane of (100) provided in a non-pixel region outside the unit pixel to maintain a distance between the front substrate and the rear substrate; Depositing silicon oxide on both sides of the substrate; (E) patterning the silicon oxide by forming and exposing a photoresist on the silicon oxide; And (bar) patterning the second silicon substrate by anisotropic etching to have a predetermined angle by using the patterned silicon oxide as a mask to form a spacer.

According to the present invention, in the step (d), it is preferable to form the silicon oxide on the upper and lower surfaces of the second silicon substrate by thermal oxidation, respectively.

According to the present invention, in the step (bar), the second silicon substrate is etched by wet etching, and the crystal surface of the patterned second silicon substrate is a (111) plane, and the second silicon substrate is inclined at 57.4 °. It is preferable to etch.

According to the present invention, the spacers are formed by bonding the patterned second silicon substrates by etching the second silicon substrates, respectively, and the height of the spacers is adjusted to the thickness of the second silicon substrates. The method may further include doping impurities to the second silicon substrate to etch the substrate to form the electron beam focusing electrode.

In addition, in order to achieve the above object, a method of manufacturing a spacer of a field emission display device according to another type of the present invention, the front substrate and the back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A spacer manufacturing method of a field emission display device comprising: a spacer provided in a non-pixel region outside of the unit pixel to maintain a distance between the front substrate and the rear substrate, (g) on a plurality of silicon substrates having a predetermined height Forming a photoresist pattern; (H) anisotropic etching and patterning the photoresist pattern as a mask to form a plurality of through portions having a predetermined shape; (I) removing the photoresist; And (d) bonding the plurality of etched silicon substrates to form a spacer.

According to the present invention, in the step (h), the silicon substrate is etched by wet etching, and after the (difference) step, the plurality of etched silicon substrates are joined in a wide direction to form a large area, and The height of the spacer is preferably formed by adjusting the thickness of the silicon substrate.

In addition, in order to achieve the above object, a method of manufacturing a field emission display device according to the present invention includes a cathode disposed on the rear substrate and arranged in parallel in a first direction, and a plane formed on the cathode to emit electrons. A field emission display device comprising an electron emission source, a plurality of anodes formed on an inner surface of the front substrate facing the rear substrate, and a plurality of anodes formed in a second direction orthogonal to the first direction, and a phosphor formed on the anodes; A manufacturing method, comprising: (i-1) depositing an insulator layer on a top surface of a silicon substrate and forming a gate electrode layer on a bottom surface of the silicon substrate; (B-1) forming and exposing a photoresist on the insulator layer and the gate electrode layer, respectively; (C-1) patterning both surfaces of the silicon substrate by anisotropic etching using the patterned insulator and the gate electrode as a mask; And (d) laminating the insulator on the cathode of the rear substrate.

According to the present invention, the plane electron emission source is made of diamond, the insulator layer is made of silicon oxide, and in the step (c-1), the silicon substrate is preferably etched by wet etching.

Therefore, a feature of the present invention is that a fine and high aspect ratio spacer and a field emission display device are provided using a difference in etching speed according to a crystal surface of a silicon substrate.

These features will be described in detail with reference to the accompanying drawings.

4 is a schematic cross-sectional view employing a spacer of the field emission display device according to the present invention.

In general, in order to develop a spacer used in a high voltage field emission display device, the height of the spacer may be easily adjusted according to driving conditions, and the width of the spacer may be precisely formed to have a width of several tens of micrometers. Such processing of spacers having a width of about several tens of micrometers and having a height of 1 to 5 mm is difficult to form by conventional laser processing or processing by sandblasting.

Therefore, the most suitable method is to use an etching process. When such an etching process is applied to a ceramic or glass substrate, an isotropic etching is performed in all directions, thereby having a height of 1 to 5 mm and a width of several tens of micrometers. It is not easy to etch.

In addition, dry etching, which has anisotropic etching characteristics, is a process developed for etching of several μm in a semiconductor process, and thus is not suitable for etching of several mm in the etching rate and selection of a mask.

To solve all of these points, it is necessary to select a material capable of forming a spacer having a high aspect ratio by applying a selective etching process. Thus, the most easily used material of the above is a silicon (Si) substrate. Since the silicon substrate shows a difference in etching speed according to each crystal plane, it is possible to form fine and sophisticated spacers.

Referring to FIG. 4, a plurality of stripe-shaped cathodes 12 are formed side by side on the surface of the rear substrate 11, and an insulator layer 13 having holes 13 ′ is formed on the cathode 12. The metal gate 14 is formed thereon with an opening 14 'corresponding to the hole 13' of the insulator layer 13, and the bottom of the hole 13 ', i.e., the exposed cathode 12 A conical micro tip 12 'is formed on the surface.

In particular, the spacer 18 according to the present invention is inserted into a region of the front substrate 17 to which the anode (not shown) on the stripe and the phosphor 15 are applied to seal the silicon oxide layer using vapor deposition or thermal oxidation. The silicon oxide layer is formed on both surfaces of the first silicon substrate having the characteristics as described above, and the silicon oxide layer is etched into a desired pattern by a photolithography process, and then the patterned silicon oxide layer is used as a mask. When the substrate is vertically etched using the difference in etching speed according to the crystal plane, the silicon oxide layer formed on both sides of the silicon layer has a high aspect ratio to maintain insulation between the front substrate 17 and the back substrate 11. The spacer 18 is formed.

A method of manufacturing the spacer of the field emission display device as described above will be described in more detail with reference to the accompanying drawings.

5A through 5D are vertical cross-sectional views illustrating processes of manufacturing the spacers of the field emission display device of FIG.

5A to 5D, first, an insulating material silicon oxide layer 18b 'is formed on both surfaces of the first silicon substrate 18a' having the crystal plane of 110 by vapor deposition or thermal oxidation.

Next, a photoresist 18c is applied onto each of the silicon oxide layers 18b 'on both sides, and a predetermined area of the photoresist 18c is exposed with an exposure apparatus having an ultraviolet wavelength, respectively, to expose a mask (not shown). After the formation, the silicon oxide layer 18b 'is patterned to form the silicon oxide film 18b, and then the mask of the photoresist 18c is removed.

Then, when the first silicon substrate 18a 'is etched by wet etching using the silicon oxide film 18b as a mask, the first silicon substrate 18a' having the crystal plane of 110 is 90 °. It meets the crystal plane of (111) having the inclination. The (111) crystal surface of the first silicon layer 18a thus etched is very small compared to the etching speed of the (110) crystal surface, and thus the anisotropic etching is hardly performed in this direction. Spacers 18 are formed.

In this way, since the vertical spacer 18 having the same shape as that of the photoresist mask and having a fine and precise structure can be formed, it is inserted into the space between the front substrate 17 and the rear substrate 11 to seal the high vacuum. It can withstand the external pressure under.

According to the present invention, as described above, the first silicon substrates 18a 'may be etched in cross-section, and the spacers 18 may be formed by bonding them together. At this time, the height of the spacer 18 can be adjusted by adjusting the thickness of the first silicon substrate 18a 'and by bonding a plurality of the first silicon substrates 18a'.

In addition, the silicon oxide film 18b used as a mask during the etching process serves as an insulator that insulates the front substrate 17 and the back substrate 11 when used as the spacer 18.

A field emission display device and a spacer manufacturing method thereof according to another type of the present invention will be described in detail with reference to the drawings.

6 is a schematic cross-sectional view employing a spacer of a field emission display device according to another type of the present invention.

Referring to FIG. 6, a plurality of stripe-shaped cathodes 22 are formed side by side on the surface of the rear substrate 21, and an insulator layer 23 having holes 23 ′ is formed on the cathode 22. The metal gate 24 is formed thereon to have an opening 24 'corresponding to the hole 23' of the insulator layer 23, and the bottom of the hole 23 ', that is, the exposed cathode 22 A conical micro tip 22 'is formed on the surface.

The spacer 28 according to another type of the present invention is inserted and sealed in a local region of the front substrate 27 to which the anode (not shown) on the stripe and the phosphor 25 are applied, and thus the front substrate 27 and the rear substrate. The insulating layer 26 adhere | attached to the non-pixel area | region of 21 is respectively provided. The silicon layer 29 is integrally formed between the insulating layers 26 and doped with impurities so that the electron beam focusing portion 29a is inclinedly exposed on the outer surface thereof. The spacer 28 formed as described above may maintain a constant gap between the front substrate 27 and the rear substrate 21, and the insulation layer 26 may insulate the front substrate 27 and the rear substrate 21 from each other. Can be maintained.

Here, the insulating layer 26 is preferably formed of an insulating material of silicon oxide, and the shape of the silicon layer 29 is not limited to an integral type, and may be bisected and joined in a trapezoidal cross section.

 Since the spacer 28 has an electron beam focusing portion formed on the silicon layer 29, the electron beam emitted from the micro tip 22 ′ of the rear substrate 21 is not spread to the other phosphor 25 of the front substrate 27. To focus.

A method of manufacturing a spacer of a field emission display device according to another type of the present invention having the configuration as described above will be described in detail with reference to the drawings.

FIG. 7A to FIG. 7D are vertical cross-sectional views illustrating processes of manufacturing the spacers of the field emission display device of FIG.

Referring to FIGS. 7A to 7D, first, an insulating material silicon oxide layer 28b 'is formed on both surfaces of a second silicon substrate 28a' having a crystal plane of (100) by vapor deposition or thermal oxidation.

Next, photoresist 28c is coated on each of the silicon oxide layers 28b 'on both sides, and a predetermined area of the photoresist 28c is exposed with an exposure apparatus having an ultraviolet wavelength, respectively, to expose a mask (not shown). After the formation, the silicon oxide layer 18b 'is patterned to form a silicon oxide film 28b, and then the mask of the photoresist 28c is removed.

Subsequently, when the second silicon substrate 28a 'is etched by wet etching using the silicon oxide film 28b as a mask, the second silicon substrate 28a' having the crystal plane of (100) may be at a predetermined angle. , It meets the crystal plane of (111) with an inclination of 57.4 °.

Since the etching rate of the (111) crystal surface of the second silicon layer 28a etched in this way is about 1/100 times smaller than the etching speed of the (100) crystal surface, etching on the back surface hardly occurs, which is smaller than the pattern of the mask. A spacer 28 according to another type of the invention is produced by the progress of anisotropic etching in which regions are etched.

Therefore, since the spacer 28 having a fine and sophisticated structure can be formed by the above-described manufacturing method, when the spacer 28 is inserted between the front substrate 27 and the rear substrate 21 and sealed, external pressure under high vacuum is prevented. I can endure it.

According to the present invention, as well as forming by the double-sided etching as described above, each of the second silicon substrates 28a 'may be cross-etched and bonded to each other to form spacers 28 having a predetermined height. At this time, the height of the spacer 28 can be adjusted by the thickness of the second silicon substrate 28a '. In addition, the silicon oxide film 28b used as a mask during the etching process serves as an insulator that insulates the front substrate 27 and the back substrate 21 when used as a spacer 28 after etching.

In addition, according to another feature of the present invention, since the center portion of the etched silicon layer 28a is formed sharply at the time of joining after both sides or cross-section etching, the silicon layer 28a is doped with impurities and then (− Induction of the voltage simultaneously serves as an electron beam focusing electrode capable of focusing the electron beams emitted from the micro tip (22 'of FIG. 6) to the phosphor (25 of FIG. 6) of the front substrate (27 of FIG. 6). do. This increases the height of the spacer 28 during the high voltage driving, thereby preventing color bleeding caused by emitting the phosphor 25 at the periphery due to the spreading of the electron beam.

A method of manufacturing a spacer of a field emission display device according to another type of the present invention will be described in detail with reference to the drawings.

8 is a schematic cross-sectional view illustrating a spacer of a field emission display device according to another type of the present invention, and FIG. 9 is a perspective view illustrating the spacer of FIG. 8.

8 and 9, a plurality of stripe-shaped cathodes 32 are formed side by side on the surface of the rear substrate 31, and an insulator layer 33 having holes 33 ′ is formed on the cathode 32. And a metal gate 34 formed thereon to have an opening 34 'corresponding to the hole 33' of the insulator layer 33, and the bottom of the hole 33 ', that is, the exposed cathode ( A conical micro tip 32 ′ is formed on the surface of 32.

The spacer 38 according to another type of the present invention is inserted into a local region of the front substrate 37 to which the anode 35 (not shown) and the phosphor 35 on the stripe are applied so that a plurality of silicon substrates can be penetrated in a tile form. When the etched silicon substrate is bonded to the width direction so as to be formed on the field emission display device having a large area and a height control, the etched silicon substrate is inserted between the front substrate 27 and the rear substrate 21 and then sealed. A spacer 28 may be formed between the front substrate 27 and the rear substrate 21 to maintain insulation.

As described above, the spacer manufacturing method of the field emission display device according to another type of the present invention will be described in more detail with reference to the accompanying drawings.

10A to 10D are vertical cross-sectional views illustrating processes of manufacturing the spacers of the field emission display device of FIG.

10A to 10D, first, a photoresist layer 38c 'is applied onto a plurality of silicon substrates 38a' having a predetermined thickness, and the applied photoresist layer 38c 'is applied to an ultraviolet wavelength. The mask 38c is formed so as to etch the silicon substrate 38a 'in a tile manner by exposing each with an exposure apparatus.

Next, the mask 38c is anisotropically cut so that the exposed region of the silicon substrate 38a 'is penetrated in a tile shape by wet etching, and then the mask 38c is removed.

When the etched tile spacer 38 is inserted between the front substrate (37 in FIG. 9) and the rear substrate (31 in FIG. 9), the spacers 38 and 38a constituting the unit cell are completed. Here, the height of the spacer 38 may be uniform by adjusting the thickness of the silicon substrate 38a ', and when the plurality of etched silicon substrates 38a are bonded in a width direction, a large area emission display is shown. The spacer 38 corresponding to the element can be manufactured.

The spacer 38 manufactured as described above is conventionally used for outgasing, damage to phosphors, oxidation of electron emission sources, etc., which may occur by a manufacturing method of fixing a ball or a fiber to a front substrate or a back substrate. In contrast to the manufacturing difficulties, the spacer 38 itself is formed as a single substrate, and is easily inserted between the front substrate (37 in FIG. 9) and the rear substrate (31 in FIG. 9) during sealing. The same problem can be eliminated.

As described above, the field emission display device employing the spacer manufactured by the types of the present invention generates light by impinging electrons from the cathode and impinging on a phosphor coated on a transparent front substrate.

Cathode ray tubes have only one electron gun, and the distance from the electron gun to the screen increases the volume and weight of the tube as the size of the screen increases. On the other hand, in the field emission display, each pixel has separate electron guns, which are composed of arrays of microtips. Due to the constant voltage across the gate, electrons are emitted from these electron guns, which accelerate and collide toward the phosphors with a stronger constant voltage. According to the theory of Fowler-Nordheim, the emission current is strongly dependent on the work function of the emission current.

In addition, the cleanliness and uniformity of the emitting surface is also very important. That is, the materials used in the manufacturing process of the field effect electron emitting device should maintain the best cleanliness. When sulfur, which is a conventional phosphor material, is applied to an emission device, damage to the tip occurs, fluorescent materials without sulfur as a low voltage phosphor for field effect electron emission devices have been discussed.

On the other hand, most field effect electron emission devices must be maintained at a high vacuum level (about 10-7 torr) to increase the average free stroke of the emission electrons and to prevent physicochemical contamination or damage of the tip. Since the bending occurs under such a high vacuum, the spacers may be positioned at regular distances to maintain a constant vacuum region distance between the front substrate and the rear substrate.

In addition, the field emission display device and the method of manufacturing the same according to the present invention made using the difference in etching speed as described above will be described in detail with reference to the drawings.

11 is a schematic cross-sectional view of a field emission display device according to the present invention.

Referring to FIG. 11, cathodes 42 arranged on the rear substrate 41 in the first direction are arranged in the first direction, and an insulator layer 43 and a silicon layer 48 having holes formed on the cathode 42 are formed. The gate electrode 44 of a conductive material is formed on the silicon layer 48 to have an opening corresponding to the hole of the silicon layer 48, and the bottom of the hole, that is, the exposed cathode 42 is formed. On the surface, a diamond plane electron emission source 46 is formed to enable electron emission.

In addition, a plurality of anodes (not shown) formed on an inner surface of the front substrate 47 facing the rear substrate 41 in a second direction orthogonal to the first direction, and a phosphor 45 on the anodes. Is formed.

Here, the planar electron emission source 46, such as diamond, is difficult to manufacture a field emission display device having a three-pole structure, that is, a cathode 42, an anode (not shown), and a gate electrode 44, despite the low electron emission voltage. Although it was difficult to be used as a tripolar structure, it is very easy to fine and fine by depositing an insulator layer of silicon oxide and a gate electrode layer of electrode material on a silicon substrate, and etching both sides by anisotropic etching using the difference in the etching rate according to the crystal surface of the silicon substrate. It is possible to form a field emission display device having a sophisticated tripolar structure.

A method of manufacturing the field emission display device will be described in detail with reference to the accompanying drawings.

12A through 12D are vertical cross-sectional views of processes illustrating a part of a manufacturing process of the method for manufacturing the field emission display device of FIG. 11.

12A to 12D, first, an insulator layer 43 ′ made of silicon oxide is deposited on a top surface of a silicon substrate 48 ′, and a gate made of an electrode material is formed on a bottom surface of the silicon substrate 48 ′. The electrode layer 44 'is deposited.

Next, a photoresist (not shown) is formed on the insulator layer 43 'and the gate electrode layer 44', and the photoresist mask is formed by exposing the photoresist mask with an exposure apparatus having an ultraviolet wavelength. After patterning to expose a predetermined area of '), the photoresist mask is removed, respectively.

Then, using the patterned insulator 43 and the gate electrode 44 as a mask, the silicon substrate 48 'is etched by anisotropic etching to have holes using wet etching, and then flipped over to insulate the insulator 43. Is bonded on the surface of the cathode (42 in FIG. 11) of the rear substrate (41 in FIG. 11) to complete the manufacture of the field emission display device having the tripolar structure.

As described above, the field emission display device and the spacer manufacturing method according to the present invention is provided by using a fine and high aspect ratio spacer and the field emission display device by using the difference in the etching rate according to the crystal surface of the silicon substrate There are advantages to that.

1 is a schematic perspective view of a conventional field emission display device;

2 is a schematic cross-sectional view of a conventional field emission display device,

3 is a vertical cross-sectional view illustrating a part of a manufacturing process of the spacer for manufacturing the field emission display device of FIG. 2;

4 is a schematic cross-sectional view employing a spacer of the field emission display device according to the present invention;

5A to 5D are vertical cross-sectional views showing processes of manufacturing the spacers of the field emission display device of FIG.

6 is a schematic cross-sectional view employing a spacer of a field emission display device according to another type of the present invention;

7A to 7D are vertical cross-sectional views showing processes of manufacturing the spacers of the field emission display device of FIG.

8 is a schematic cross-sectional view employing a spacer of a field emission display device according to another type of the present invention;

9 is a perspective view illustrating the spacer of FIG. 8;

10A to 10D are vertical cross-sectional views of processes illustrating a part of a manufacturing process of the spacer manufacturing method of FIG. 9;

11 is a schematic cross-sectional view of a field emission display device according to the present invention;

12A through 12D are vertical cross-sectional views of processes illustrating a part of the manufacturing process of the method for manufacturing the field emission display device of FIG. 11.

<Description of Symbols for Major Parts of Drawings>

1,11,21,31,41 ... back substrate 2,12,22,32,42 ... cathode

2 ', 12', 22 ', 32' ... microtip 3,13,23,33,43 ... insulator layer

4,14,24,34,44 ... gate 5,15,25,35,45 ... phosphor

6 ... anode 7,17,27,37,47 ... front board

8,18,28,38 ... spacer 9 ... sealing

18a, 28a, 38a, 48 ... Silicon layer 9 '. Glass stick

10 ... mask 18b, 28b ... silicon oxide layer

18c, 28c, 38c ... Photoresist 26 ... Insulation Layer

29. Silicon layer 29a ... Electron beam focusing part

46. Planar electron emission source

Claims (10)

A front substrate and a back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A field emission display device comprising: a spacer disposed in a non-pixel region outside of the unit pixel to maintain a distance between the front substrate and the rear substrate. The spacer, An insulating layer bonded to each of the non-pixel regions of the front substrate and the rear substrate; And And a silicon layer formed integrally between the insulating layers and doped with impurities such that an electron beam focusing part is inclinedly exposed on an outer surface thereof. The method of claim 1, And the silicon layer is bisected and joined in a trapezoidal cross section. The method of claim 1, And the insulating layer is formed of silicon oxide. A front substrate and a back substrate; An anode and a cathode on an X-Y matrix formed on the inner surfaces of the front substrate and the rear substrate to provide unit pixels at intersections; A plurality of micro tips provided on the cathode; An insulator layer formed on the cathode and having the holes corresponding to the micro tips; A gate having an opening corresponding to the hole; A spacer manufacturing method of a field emission display device comprising: a spacer provided in a non-pixel region outside the unit pixel to maintain a distance between the front substrate and the rear substrate. (D) depositing silicon oxide on both sides of the second silicon substrate having the crystal plane of (100), respectively; (E) patterning the silicon oxide by forming and exposing a photoresist on the silicon oxide; And (F) patterning the second silicon substrate by anisotropic etching to have a predetermined angle using the patterned silicon oxide as a mask to form a spacer, and doping impurities into the second silicon substrate; A spacer manufacturing method of a field emission display device. The method of claim 4, wherein In the step (d), And forming the silicon oxide on the top and bottom surfaces of the second silicon substrate by thermal oxidation, respectively. The method of claim 4, wherein In the step (bar), And etching the second silicon substrate by wet etching. The method of claim 4, wherein In the step (bar), And a crystal plane of the patterned second silicon substrate is a (111) plane. The method of claim 4, wherein In the step (bar), And etching the second silicon substrate at an inclined angle of 57.4 °. The method of claim 4, wherein And the spacers are formed by bonding the patterned second silicon substrates by cross-etching the second silicon substrates, respectively. The method of claim 4, wherein The height of the spacer is controlled by the thickness of the second silicon substrate manufacturing method of the field emission display device.