KR100453913B1 - METHOD OF ELECTROLESS Ni PLATING ON Pb-BASED CERAMICS - Google Patents

METHOD OF ELECTROLESS Ni PLATING ON Pb-BASED CERAMICS Download PDF

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KR100453913B1
KR100453913B1 KR10-2000-0080394A KR20000080394A KR100453913B1 KR 100453913 B1 KR100453913 B1 KR 100453913B1 KR 20000080394 A KR20000080394 A KR 20000080394A KR 100453913 B1 KR100453913 B1 KR 100453913B1
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plating
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황순철
전명철
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재단법인 포항산업과학연구원
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
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    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/1851Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
    • C23C18/1872Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material by chemical pretreatment
    • C23C18/1886Multistep pretreatment
    • C23C18/1893Multistep pretreatment with use of organic or inorganic compounds other than metals, first
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • C23C18/32Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C23C18/36Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents using hypophosphites

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Abstract

본 발명은 Pb계 세라믹스 무전해 Ni 도금 방법에 관한 것으로서, 이 방법은 세라믹스를 CH3OH 또는 NaHCO4용액으로 탈지(degreasing)하는 단계, 상기 탈지된 세라믹스를 0.1 내지 5.0% 농도의 HBF4용액으로 에칭하는 단계, 상기 에칭된 세라믹스를 25 내지 200㎖/L의 HCl을 함유한 Pd-Sn 용액으로 캐탈라이징(catalyzing)하는 단계, 상기 캐탈라이징된 세라믹스를 5 내지 20% 농도의 H2SO4용액으로 액셀러레이팅(accelerating)하는 단계 및 상기 엑셀러레이팅된 세라믹스를 8.0 내지 10.0의 pH 및 70℃ 내지 100℃의 온도에서 Ni염을 사용하여 무전해 Ni 도금하는 단계룰 포함한다.The present invention relates to a Pb-based ceramic electroless Ni plating method, which degreasing the ceramics with CH 3 OH or NaHCO 4 solution, the degreased ceramics with HBF 4 solution of 0.1-5.0% concentration. Etching, catalyzing the etched ceramics with a Pd-Sn solution containing 25 to 200 mL / L of HCl, and reacting the catalyzed ceramics with a H 2 SO 4 solution at a concentration of 5 to 20%. Accelerating with and electroless Ni plating using the Ni salt at a pH of 8.0 to 10.0 and a temperature of 70 to 100 ° C.

본 발명의 무전해 Ni 도금방법은 밀착력 및 소지와 도금층간의 전기적 접촉이 현저하게 개선되어 Pb계 세라믹스 기지상의 무전해 Ni 도금방법으로 실용성이 높은 효과가 있다.The electroless Ni plating method of the present invention significantly improves the adhesion and the electrical contact between the base and the plated layer has an effect of high practicality as an electroless Ni plating method on a Pb-based ceramic matrix.

Description

납계 세라믹스의 무전해 니켈 도금 방법{METHOD OF ELECTROLESS Ni PLATING ON Pb-BASED CERAMICS}Electroless nickel plating method of lead-based ceramics {METHOD OF ELECTROLESS Ni PLATING ON Pb-BASED CERAMICS}

[산업상 이용분야][Industrial use]

본 발명은 Pb계 세라믹스의 무전해 Ni 도금방법에 관한 것으로서, 보다 상세하게는 밀착력 및 소지와 도금층간의 전기적 접촉이 우수한 Pb계 세라믹스의 무전해 Ni 도금방법에 관한 것이다.The present invention relates to an electroless Ni plating method of Pb-based ceramics, and more particularly, to an electroless Ni plating method of Pb-based ceramics having excellent adhesion and electrical contact between the base and the plating layer.

[종래기술][Private Technology]

Pb계 세라믹스, 특히 PZT(lead zirconate titanate: PbZrO3-PbTiO3또는 PbTi0.48Zr0.52O3)에 전극을 형성하는 방법은 페이스트법, 건식 도금법(PVD), 습식 도금법(무전해 도금) 등이 있다. 상기 페이스트법에는 Ag, Pd, Pt 등 귀금속과 Cu 등이 사용되며, 건식 및 습식 도금법에는 Cu와 Ni이 주로 사용된다.The method of forming an electrode in Pb-based ceramics, in particular PZT (lead zirconate titanate: PbZrO 3 -PbTiO 3 or PbTi 0.48 Zr 0.5 2O 3 ), includes a paste method, a dry plating method (PVD), and a wet plating method (electroless plating). . Precious metals such as Ag, Pd, Pt, Cu, and the like are used in the paste method, and Cu and Ni are mainly used in the dry and wet plating methods.

이중 가장 많이 사용되는 방법은 Ag나 Pd의 페이스트법이며 이는 내열성, 내환경성, 전기전도도, 땜납성, 밀착력 등의 성질이 우수하기 때문이다. 그러나 이러한 방법은 고온에서 열처리를 수행해야 하며 이때 PZT 소지의 왜곡과 함께 전극용 귀금속이 소지로 확산 침투되는 현상이 종종 발생한다. 또한 복잡한 형상의 소지상에 코팅할 때에는 공정이 까다로운 단점을 가지고 있다. 한편 건식 도금법은 다른 도금법에 비해 밀착도가 떨어지며, 초기 설비비가 많이 들고, 조업 조건이 까다로우며 복잡한 형상의 소지에 대량도금이 불가능한 단점이 있다.The most commonly used method is the paste method of Ag or Pd because of excellent properties such as heat resistance, environmental resistance, electrical conductivity, solderability, adhesion. However, this method requires a heat treatment at a high temperature, and the phenomenon of diffusion of the precious metal for the electrode into the substrate often occurs with the distortion of the PZT substrate. In addition, there is a disadvantage in that the process is difficult when coating on a substrate of a complex shape. On the other hand, the dry plating method is inferior in adhesion, compared to other plating methods, there is a disadvantage that the initial equipment cost is high, the operating conditions are difficult, and the bulk plating is impossible to possess a complex shape.

이에 반해 습식 도금법인 무전해 도금법에 의한 전극 형성은 내열성, 내환경성, 밀착성이 우수할 뿐만 아니라 전극용 물질의 소지 내로의 확산이 거의 발생하지 않으며 다른 방법에서는 불가능한 튜브형이나 실린더형 소지 내벽의 도금이 가능한 장점이 있다.On the other hand, the electrode formation by the electroless plating method, which is a wet plating method, is excellent in heat resistance, environmental resistance, and adhesion, and hardly diffuses into the body of the electrode material, and plating of the inner wall of the tubular or cylindrical body which is impossible in other methods is not possible. There are possible advantages.

일반적으로 PZT 상에 전극형성을 위한 무전해 도금 방법은 탈지, 에칭, 활성화처리, Ni 도금순으로 진행되는데, 이때 PZT는 소성 조건이나 조성에 따라 내약품성이 변화하고 무전해 도금시 각 처리 공정에서 그 성분이 용출되어 나와 도금에 악영향을 미친다. 특히 PZT는 무전해 도금에 있어 촉매 독인 Pb 등을 함유하고 있어 생산단가에 가장 비중이 큰 무전해 도금액의 수명에 큰 영향을 미치므로 도금 석출이 양호하고 욕의 수명을 연장시켜려면 적절한 도금액의 선정 및 도금시 공정변수의 제어가 반드시 필요하다.In general, electroless plating methods for forming electrodes on PZT are performed in order of degreasing, etching, activating, and Ni plating. In this case, PZT has chemical resistance depending on the firing conditions or composition, and in each treatment process during electroless plating. The component elutes and adversely affects the plating. In particular, PZT contains Pb, which is a catalyst poison in electroless plating, which greatly affects the lifetime of the electroless plating solution, which has the largest weight on the production cost. Therefore, in order to improve plating deposition and extend the life of the bath, an appropriate plating solution is selected. And control of process variables during plating.

본 발명은 상기와 같은 문제점을 해결하기 위한 것으로서, 본 발명의 목적은 PZT상에 전극 형성을 위하여 밀착력 및 소지와 도금층간의 전기적 접촉이 우수한 Pb계 세라믹스의 무전해 Ni 도금방법을 제공하는 것이다.The present invention has been made to solve the above problems, and an object of the present invention is to provide an electroless Ni plating method of Pb-based ceramics excellent in adhesion and the electrical contact between the base and the plating layer for forming the electrode on the PZT.

상기한 목적을 달성하기 위하여 본 발명은 세라믹스를 CH3OH 또는 NaHCO4용액으로 탈지(degreasing)하는 단계; 상기 탈지된 세라믹스를 0.1 내지 5.0% 농도의 HBF4용액으로 에칭하는 단계; 상기 에칭된 세라믹스를 25 내지 200㎖/L의 HCl을 함유한 Pd-Sn 용액으로 캐탈라이징(catalyzing)하는 단계; 상기 캐탈라이징된 세라믹스를 5 내지 20% 농도의 H2SO4용액으로 액셀러레이팅(accelerating)하는 단계; 및 상기 엑셀러레이팅된 세라믹스를 8.0 내지 10.0의 pH 및 70℃ 내지 100℃의 온도에서 Ni염을 사용하여 무전해 Ni 도금하는 단계를 포함하는 것인 Pb계 세라믹스의 무전해 Ni 도금 방법을 제공한다.In order to achieve the above object, the present invention comprises the steps of degreasing the ceramics with CH 3 OH or NaHCO 4 solution; Etching the degreased ceramics with HBF 4 solution at a concentration of 0.1-5.0%; Catalyzing the etched ceramics with a Pd-Sn solution containing 25 to 200 mL / L of HCl; Accelerating the catalyzed ceramics with a 5 to 20% H 2 SO 4 solution; And electroless Ni plating of the accelerated ceramics using Ni salt at a pH of 8.0 to 10.0 and a temperature of 70 to 100 ° C. to provide an electroless Ni plating method of Pb-based ceramics. .

이하 본 발명을 더욱 상세하게 설명한다.Hereinafter, the present invention will be described in more detail.

본 발명의 Pb계 세라믹스의 무전해 Ni 도금 방법은 먼저, 세라믹스, 특히 PZT와 같이 조성이 복잡한 세라믹스를 CH3OH 또는 NaHCO3용액에 침지하여, 세라믹스의 오염 물질을 제거하는 탈지 공정(degreasing)을 실시한다. 탈지 공정을 실시하여 소지의 오염 물질을 제거하면, 다음 공정인 에칭이 균일하게 되어 밀착력을 향상시킬 수 있고, 무전해 도금 공정에서 도금을 균일하게 할 수 있다. 상기 NaHCO3용액은 용매 1리터당 40 내지 50g의 NaHCO3를 물 등의 용매에 용해시켜 제조된 것을 사용한다.Electroless Ni plating method of the Pb-based ceramics of the present invention, first, the degreasing process of removing the contaminants of the ceramics by immersing the ceramics, especially ceramics of complex composition such as PZT in CH 3 OH or NaHCO 3 solution. Conduct. When the degreasing step is carried out to remove the contaminants, the etching, which is the next step, becomes uniform, thereby improving the adhesion and making the plating uniform in the electroless plating step. The NaHCO 3 solution is prepared by dissolving 40-50 g of NaHCO 3 per liter of solvent in a solvent such as water.

탈지된 세라믹스를 에칭(ethching)한다. 에칭 공정은 세라믹스 소지 표면에 미소한 요철을 형성시켜서 갈고리 효과를 주어 도금의 밀착성을 향상시키는 동시에소지 표면의 친수성도 부여하는 역할을 한다. 에칭 공정에 사용되는 용액의 종류 및 농도를 적절히 조절하여 에칭이 심하게 일어남에 따라 밀착력은 우수해질 수 있으나, 전기적인 접촉 특성이 저하될 수 있는 문제를 방지하는 것이 좋다. 본 발명에서는 이러한 에칭 용액으로 0.1 내지 5.0% 농도의 HBF4용액을 사용하였으며, 에칭 용액의 농도가 0.1% 미만일 경우에는 세라믹스 소지 에칭이 거의 일어나지 않으며, 5.0%를 초과할 경우에는 에칭이 과도하게 일어남에 따라 전기적인 접촉 특성이 저하되어 바람직하지 않다. HBF4용액은 물 등의 용매 중량의 0.1 내지 5.0%에 해당하는 HBF4를 용매에 용해시켜 제조된 것을 사용한다.The degreased ceramics are etched. The etching process forms a small unevenness on the surface of the ceramic body to give a hook effect to improve the adhesion of the plating and also to impart hydrophilicity to the surface of the body. Although the adhesion may be excellent as the etching is severely performed by appropriately adjusting the type and concentration of the solution used in the etching process, it is good to prevent the problem that the electrical contact characteristics may be degraded. In the present invention, an HBF 4 solution having a concentration of 0.1 to 5.0% was used as the etching solution. When the concentration of the etching solution is less than 0.1%, ceramic-based etching hardly occurs, and when the concentration exceeds 5.0%, the etching occurs excessively. As a result, the electrical contact property is lowered, which is not preferable. The HBF 4 solution is prepared by dissolving HBF 4 corresponding to 0.1 to 5.0% of the weight of the solvent such as water in the solvent.

이어서, 얻어진 세라믹스를 도금의 속도, 환원 효율 및 안정도 등을 조절하기 위하여, 캐탈라이징(catalyzing) 및 액설러레이팅(accelerating) 공정을 차례대로 실시한다. 캐탈라이징 공정은 에칭된 세라믹스를 수세한 후, 25 내지 200㎖/L의 HCl을 함유한 Pd-Sn 캐탈리스트(catalyst) 용액을 사용하여 실시한다. 이 캐탈라이징 공정에서, Sn2+-Pd2+착염이 세라믹스 표면에 흡착된다.Subsequently, in order to control the speed, reduction efficiency, stability, and the like of the obtained ceramics, catalyzing and accelerating processes are sequentially performed. The catalyzing process is carried out using a Pd-Sn catalyst solution containing 25 to 200 mL / L HCl after washing the etched ceramics. In this catalysing process, Sn 2+ -Pd 2+ complex salt is adsorbed on the ceramic surface.

상기 Pd-Sn 용액은 Pd염과 Sn염 및 HCl을 혼합하여 제조한다. 상기 Pd염으로는 PdCl2을 사용할 수 있고, 상기 Sn염으로는 SnCl2·H2O를 사용할 수 있다. 상기 Pd-Sn 용액은 0.1 내지 0.4g/ℓ의 PdCl2와, 5 내지 30g/ℓ의 SnCl2·H2O 및 25 내지 300㎖/ℓ의 HCl을 혼합하여 제조한다. Pd염, Sn염 및 HCl의 사용량이 상기 범위를 벗어나는 경우에는 표면 촉매화가 불균일하게 되어, 도금 반응이 매우 느리게 일어나거나 국부적으로 불균일하게 되므로 본 발명의 효과인 균일한 도금층을 얻을 수 없어서 바람직하지 않다.The Pd-Sn solution is prepared by mixing Pd salt, Sn salt and HCl. PdCl 2 may be used as the Pd salt, and SnCl 2 · H 2 O may be used as the Sn salt. The Pd-Sn solution is prepared by mixing 0.1 to 0.4 g / l PdCl 2 with 5 to 30 g / l SnCl 2 · H 2 O and 25 to 300 ml / l HCl. If the amount of Pd salt, Sn salt and HCl is out of the above range, the surface catalysis becomes uneven, and the plating reaction occurs very slowly or locally unevenly, which is not preferable because it is impossible to obtain a uniform plating layer which is an effect of the present invention. .

캐탈라이징한 세라믹스를 수세하며, 이때, 세라믹스 표면에 흡착된 착염이 가수분해되어 Sn2+와 Sn4+및 Pd2+가 공존하게 된다. 이어서, 액설러레이팅 공정을 실시한다. 액설러레이팅 공정에서, Sn2+및 Sn4+가 제거되고, Pd2+는 Sn2+와의 반응으로 Sn4+과 Pd0으로 되어, 세라믹스 표면에 Pd 금속과 소량의 Sn2+및 Sn4+가 남게 된다.The catalyzed ceramics are washed with water, and at this time, the complex salt adsorbed on the surface of the ceramics is hydrolyzed to coexist with Sn 2+ , Sn 4+, and Pd 2+ . Next, an acceleratoring process is performed. In the liquid seolreo rating process, the Sn 2+ and Sn 4+ and removed, Pd 2+ is by the reaction of Sn 2+ and Sn 4+ is a Pd 0, Pd metal and a small amount to the ceramic surface Sn 2+ and Sn 4 + Is left.

액설러레이팅 공정은 5 내지 20% 농도의 H2SO4수용액에서 실시한다. H2SO4수용액의 농도가 5% 미만이거나, 20%를 초과하는 경우에는 도금 속도 및 도금 양의 효율이 떨어져 바람직하지 않다.The axalizing process is carried out in an aqueous solution of H 2 SO 4 at a concentration of 5-20%. When the concentration of the H 2 SO 4 aqueous solution is less than 5% or more than 20%, the plating rate and the amount of the plating amount are poor, which is not preferable.

액설러레이팅 공정을 거친 세라믹스를 수세하면, Sn2+및 Sn4+의 잔류 주석 이온이 제거되고, 표면이 Pd로 캐탈라이징화된 세라믹스가 얻어진다.When subjected to the water washing solution seolreo decorated ceramic process, and the residual tin ions of Sn 2+ and Sn + 4 are removed, the surface of the screen by the rising kaetal Pd ceramic is obtained.

이와 같은 전처리 공정을 거친 세라믹스에 Ni염, 환원제, 착화제, pH 조절제 및 완충제를 사용하여 무전해 Ni 도금을 실시한다. 이때, 무전해 도금 공정의 조건은 pH 8.0 내지 10.0 및 70 내지 100℃로 한다. pH 조절은 NaOH 또는 KOH와 같은 강알칼리를 pH 조절제로 사용하여 조절하며, pH가 8.0보다 낮을 경우에는 도금 속도가 떨어지는 문제점이 있고, 10.0보다 높을 경우에는 도금층 내의 결합이 많아져서 표면 저항이 증가하는 문제점이 있다. 또한, 도금 공정 온도가 70℃보다 낮을 경우에는 도금 속도가 급격히 떨어지는 문제점이 있고, 100℃보다 높을 경우에는 도금액의 취급이 어려운 문제점이 있다.Electroless Ni plating is performed on the ceramics which have undergone such a pretreatment process using Ni salts, reducing agents, complexing agents, pH adjusting agents and buffers. At this time, the conditions of an electroless plating process shall be pH 8.0-10.0 and 70-100 degreeC. pH adjustment is controlled by using strong alkali such as NaOH or KOH as a pH regulator, when the pH is lower than 8.0 there is a problem that the plating rate is lowered, and when it is higher than 10.0, there is a problem that the surface resistance increases because the number of bonds in the plating layer increases There is this. In addition, when the plating process temperature is lower than 70 ℃, there is a problem that the plating speed drops sharply, and if the plating process temperature is higher than 100 ℃, it is difficult to handle the plating liquid.

상기 Ni염으로는 Ni 이온을 함유한 염으로서, NiCl2, NiSO4또는 이들의 수화물 사용할 수 있다. 상기 환원제는 Ni 이온에 전자를 공급하여 촉매화된 소지 표면에 금속으로 환원시키는 역할을 하는 물질로서, NaH2PO2또는 이들의 수화물을 사용할 수 있다. 상기 pH 조절제는 pH를 조절하는 역할뿐만 아니라, 도금의 속도, 환원 효율 안정도 등을 조정하는 역할을 한다. 상기 착화제는 용액 중 유리 금속 이온의 양을 조절하여 도금 속도를 지배하는 인자로 작용하면서 높은 유리 금속 이온 농도로 인한 자발적 분해를 막아주며, 또 하나는 도금 중에 발생하는 수소 이온과 전기적 상호 작용을 하여 용액의 급격한 변화를 막는 pH 완충제로서의 역할을 한다. 이러한 착화제로는 구연산(C6H8O7), 구연산 소다(C6H5Na3O7), 아세트산 소다(NaCH3COO) 또는 Na·EDTA(ethylene diaminetetraacetic acid)(C10H12N2O8Na4·2H2O)를 사용할 수 있다. 완충제는 반응이 진행되면서 일어나는 pH의 변화를 완충시키는 역할을 하며, 완충제로는 해리 함수가 작은 염이나 산 예를 들어 아세트산 소다, 구연산 소다, 붕산 또는 탄산을 사용할 수 있다. 이외에도, 도금액의 자발적인 분해를 억제하여 용액을 안정시키는 역할을 하는 티오우레아(thiourea) NaCN 또는 MBT(mercapto benzo thiazole)를 안정제로 더욱 사용할 수 도 있다. 상기 Ni염, 환원제, 착화제, 완충제 및 pH 조절제의 사용량은 적절히조절하면 되면 특별히 제한할 필요는 없다.As the Ni salt is a salt containing Ni ions, NiCl 2, NiSO 4 or may be a hydrate of the foregoing. The reducing agent is a material that serves to reduce electrons to the surface of the catalyzed body by supplying electrons to the Ni ions, NaH 2 PO 2 or a hydrate thereof may be used. The pH adjuster not only adjusts the pH, but also adjusts the rate of plating, reduction efficiency stability, and the like. The complexing agent controls the amount of free metal ions in the solution to act as a factor governing the plating rate, and prevents spontaneous decomposition due to the high free metal ion concentration, and the other has an electrical interaction with hydrogen ions generated during plating. It acts as a pH buffer to prevent sudden changes in solution. Such complexing agents include citric acid (C 6 H 8 O 7 ), citric acid (C 6 H 5 Na 3 O 7 ), sodium acetate (NaCH 3 COO) or Na.EDTA (ethylene diaminetetraacetic acid) (C 10 H 12 N 2 O 8 Na 4 .2H 2 O) can be used. The buffer serves to buffer the change in pH that occurs as the reaction proceeds. As the buffer, a small dissociation salt or an acid such as sodium acetate, sodium citrate, boric acid or carbonic acid may be used. In addition, thiourea NaCN or MBT (mercapto benzo thiazole), which serves to stabilize the solution by inhibiting spontaneous decomposition of the plating solution, may be further used as a stabilizer. The amount of the Ni salt, the reducing agent, the complexing agent, the buffer and the pH adjusting agent is not particularly limited as long as it is appropriately adjusted.

다음은 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시한다. 그러나 하기의 실시예들은 본 발명을 보다 쉽게 이해하기 위하여 제공되는 것일 뿐 본 발명이 하기의 실시예에 한정되는 것은 아니다.The following presents a preferred embodiment to aid the understanding of the present invention. However, the following examples are merely provided to more easily understand the present invention, and the present invention is not limited to the following examples.

(실시예 1)(Example 1)

PZT 세라믹스를 CH3OH에 5분간 침적시켜 PZT 세라믹스의 오염 물질을 제거하는 전처리 탈지 공정을 실시하였다. 탈지된 PZT 세라믹스를 친수성으로 하기 위하여 2% 농도의 HBF4용액으로 5분간 에칭하였다. 이어서, 에칭된 PZT 세라믹스를 수세한 후, 0.4g/LPdCl2, 20g/LSnCl2·2H2O 및 25∼200㎖/LHCl의 용액을 사용하여 약 45℃의 온도에서 1분간 캐탈라이징을 하였다.PZT ceramics were immersed in CH 3 OH for 5 minutes to carry out a pretreatment degreasing process to remove contaminants from PZT ceramics. The degreased PZT ceramics were etched for 5 minutes with 2% HBF 4 solution to make them hydrophilic. Subsequently, the etched PZT ceramics were washed with water and then catalyzed at a temperature of about 45 ° C. for 1 minute using a solution of 0.4 g / L PdCl 2 , 20 g / L SnCl 2 .2H 2 O, and 25 to 200 mL / L HCl. Was done.

캐탈라이징된 PZT 세라믹스를 10% H2SO4용액 5분간 침지하여 액설레이팅을 실시하였다. 이어서, 액설레이팅된 PZT 세라믹스를 증류수로 잘 세척한 후, 금속염으로 44g/LNiCl2, 환원제로 11g/LNaH2PO2·H2O, 착화제 및 완충제로 C6H5O7Na3·2H2O를 각각 사용하여 무전해 Ni도금을 실시하였다. 이때, 무전해 도금은 NaOH를 pH 조절제로 사용하여 pH를 8로, 온도를 70℃로 조절하여 1시간동안 실시하였다. (비교예 1)Catalyzed PZT ceramics were immersed by immersing 10% H 2 SO 4 solution for 5 minutes. Then, aekseol by a fine wash the decorated PZT ceramics with distilled water, with 44 g / L NiCl 2, the reducing agent to the metal salt 11 g / L NaH 2 PO 2 · H 2 O, a complexing agent and buffering agent C 6 H 5 O 7 Electroless Ni plating was performed using Na 3 .2H 2 O, respectively. At this time, the electroless plating was performed for 1 hour by adjusting the pH to 8, the temperature to 70 ℃ using NaOH as a pH regulator. (Comparative Example 1)

pH 조절제로 NH4OH를 사용하여, pH를 3으로 조절한 것을 제외하고는 상기 실시예 1과 동일하게 실시하였다.NH 4 OH was used as a pH adjuster, except that the pH was adjusted to 3.

상기 실시예 1 및 비교예 1의 방법으로 도금된 PZT 세라믹스를 사용하여 통상의 방법으로 상온에서의 도금층의 밀착력 및 표면저항을 측정하고 그 결과를 하기 표 1에 나타내었다.Adhesion and surface resistance of the plated layer at room temperature were measured using PZT ceramics plated by the method of Example 1 and Comparative Example 1, and the results are shown in Table 1 below.

실시예 1Example 1 비교예 1Comparative Example 1 밀착력[㎏/㎣]Adhesion [㎏ / ㎣] 0.0840.084 0.0350.035 표면 저항[ohm/㎝]Surface resistance [ohm / cm] 0.0790.079 0.1730.173

상기 표 1에서 보는 바와 같이 실시예 1의 경우 비교예 1에 비하여 밀착력이 크게 향상되었으며, 표면저항이 50%이상 감소하여 우수한 도금특성을 나타내었다.As shown in Table 1, in the case of Example 1, the adhesion was greatly improved compared to Comparative Example 1, and the surface resistance was reduced by 50% or more, thereby showing excellent plating characteristics.

본 발명의 무전해 Ni 도금방법은 밀착력 및 소지와 도금층간의 전기적 접촉이 현저하게 개선되어 Pb계 세라믹스 기지상의 무전해 Ni 도금방법으로 실용성이 높은 효과가 있다.The electroless Ni plating method of the present invention significantly improves the adhesion and the electrical contact between the base and the plated layer has an effect of high practicality as an electroless Ni plating method on a Pb-based ceramic matrix.

Claims (2)

세라믹스를 CH3OH 또는 NaHCO4용액으로 탈지(degreasing)하는 단계;Degreasing the ceramics with CH 3 OH or NaHCO 4 solution; 상기 탈지된 세라믹스를 0.1 내지 5.0% 농도의 HBF4용액으로 에칭하는 단계;Etching the degreased ceramics with HBF 4 solution at a concentration of 0.1-5.0%; 상기 에칭된 세라믹스를 25 내지 200㎖/L의 HCl을 함유한 Pd-Sn 캐탈리스트 용액으로 캐탈라이징(catalyzing)하는 단계;Catalyzing the etched ceramics with a Pd-Sn catalyst solution containing 25-200 mL / L of HCl; 상기 캐탈라이징된 세라믹스를 5 내지 20% 농도의 H2SO4용액으로 액셀러레이팅(accelerating)하여 표면이 Pd로 캐탈라이징화된 세라믹스를 제조하는 단계; 및Accelerating the catalyzed ceramics with a H 2 SO 4 solution at a concentration of 5 to 20% to produce ceramics catalyzed by Pd; And 상기 표면이 Pd로 캐탈라이징화된 세라믹스를 8.0 내지 10.0의 pH 및 70℃ 내지 100℃의 온도에서 Ni염을 사용하여 무전해 Ni 도금하는 단계Electroless Ni plating the surface-catalyzed ceramics using Ni salt at a pH of 8.0 to 10.0 and a temperature of 70 to 100 ° C. 룰 포함하는 것인 Pb계 세라믹스의 무전해 Ni 도금 방법.The electroless Ni plating method of Pb type ceramics which contains a rule. 제 1 항에 있어서, 상기 Pd-Sn 용액은 0.1 내지 0.4g/ℓ의 PdCl2와, 5 내지 30g/ℓ의 SnCl2·H2O 및 25 내지 300㎖/ℓ의 HCl을 포함하는 것인 Pb계 세라믹스의 무전해 Ni 도금 방법.The Pb of claim 1, wherein the Pd-Sn solution comprises 0.1 to 0.4 g / l of PdCl 2 , 5 to 30 g / l of SnCl 2 · H 2 O, and 25 to 300 ml / l of HCl. Electroless Ni plating method of ceramics.
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KR830002773A (en) * 1979-06-19 1983-05-30 로늘드 스미자아 Method for producing 3-thienyl malonic acid
KR870000344A (en) * 1985-06-20 1987-02-18 채영복 New preparation of 7- (D-2-formyloxy-2-phenylacetamido) -3- (1-methyl-1H-tetrazol-5-ylthiomethyl) -3-cepem-4-carboxylic acid derivative
JPH01104779A (en) * 1987-10-19 1989-04-21 Murata Mfg Co Ltd Pretreatment of ceramic before electroless plating
JPH0953183A (en) * 1995-08-17 1997-02-25 Sony Corp Formation of plating film for electrode of ceramic parts

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR830002773A (en) * 1979-06-19 1983-05-30 로늘드 스미자아 Method for producing 3-thienyl malonic acid
KR870000344A (en) * 1985-06-20 1987-02-18 채영복 New preparation of 7- (D-2-formyloxy-2-phenylacetamido) -3- (1-methyl-1H-tetrazol-5-ylthiomethyl) -3-cepem-4-carboxylic acid derivative
JPH01104779A (en) * 1987-10-19 1989-04-21 Murata Mfg Co Ltd Pretreatment of ceramic before electroless plating
JPH0953183A (en) * 1995-08-17 1997-02-25 Sony Corp Formation of plating film for electrode of ceramic parts

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