KR100415379B1 - three dimensional hall device and its manufacturing method - Google Patents

Abstract

The present invention relates to a three-dimensional Hall element and a method for manufacturing the same, and includes a substantially plate-shaped P-type substrate to enable recognition and location of three-dimensional magnetic materials; An N-type epi layer formed on a top surface of the P-type substrate; An emitter region formed by doping a P-type impurity in the center of an upper surface of the N-epi layer; First to fourth collector regions formed by doping P-type impurities in four directions symmetrically spaced from the emitter region; A base region doped with N-type impurities in the N-type epitaxial layers which are outer periphery of the first to fourth collector regions, and formed in a quadrangular line shape surrounding the outer periphery of the first to fourth collector regions; A P-type impurity is doped into the N-type epi layer, which is an outer circumference of the base region, and is connected to the P-type substrate and includes a fifth collector region formed in a substantially quadrangular line shape surrounding the outer circumference of the base region. Characterized in that made.

Description

Three-dimensional hall device and its manufacturing method

The present invention relates to a three-dimensional Hall element and a method of manufacturing the same, and more particularly, to a three-dimensional Hall element and a method for manufacturing the three-dimensional magnetic material can be recognized and located.

Hall elements are known as magnet-responsive elements and are widely used for proximity switches and motor control. Furthermore, in principle, it can be applied to the field of measurement such as Gaussian meter or multimeter using power multiplier. Until now, Hall element is very active because of poor temperature characteristics, low output signal, and unbalanced voltage. I did not. However, in recent years, improvements in materials, processes, and application circuit technology have been remarkable, and sufficient performance as instruments can be achieved.

As shown in FIG. 1, such a Hall element is a structure in which lead wires are in contact with four sides of a semiconductor flake 1 '. When the current Ic flows through the semiconductor flakes 1 'and a magnetic field B is applied at right angles to the semiconductor flakes 1', a potential difference Vh occurs due to the Hall effect. At this time, Ic is a control current and Vh is a hall voltage, and the hall voltage Vh is normally expressed by the following equation.

Vh = KIc B

Here, K is called the product sensitivity, and Ic is the hall voltage at 1 mA and B = 1KG (kilo gauss), and the unit is mV / mA · KG.

As shown in Equation 1, since the hall voltage Vh is a function of the product sensitivity K, the control current Ic, and the magnetic flux density B, a large Hall voltage can be obtained if the control current Ic can be flowed a lot.

On the other hand, as described above, the Hall element is widely applied to industrial measurement, automatic control, and the like as a displacement converter, a multiplier, etc. in addition to the measurement of the magnetic field, the current, the power, and the like.

However, all these conventional Hall elements only have two-dimensional recognition of the presence or absence of a magnetic material, and since they cannot recognize or locate magnetic materials in three dimensions, they cannot be utilized as more advanced devices. .

Accordingly, the present invention has been made to solve the above-mentioned conventional problems, to provide a three-dimensional Hall element and a method of manufacturing the same that can recognize and position the three-dimensional magnetic material.

1 is an explanatory diagram for explaining the structure and operation of a conventional Hall element.

2 is a plan view showing a three-dimensional Hall element according to the present invention.

3 is a cross-sectional view showing a three-dimensional Hall element according to the present invention.

4 is an equivalent circuit diagram of a three-dimensional Hall element according to the present invention.

5A to 5G are explanatory views sequentially showing a method for manufacturing a three-dimensional Hall element according to the present invention.

-Description of the main symbols in the drawings-

100; Hall element according to the present invention

2; P-type substrate 4; N-type epitaxial layer

6; Emitter region

8a-8d; First to fourth collector regions

10; Base region 12; Fifth Collector Area

14; Oxide film 16; Emitter metal

18a-18d; First to fourth collector metals 20; Base metal

22; 5th collector metal

In order to achieve the above object, the three-dimensional Hall element according to the present invention comprises a substantially plate-shaped P-type substrate; An N-type epi layer formed on a top surface of the P-type substrate; An emitter region formed by doping a P-type impurity in the center of an upper surface of the N-epi layer; First to fourth collector regions formed by doping P-type impurities in four directions symmetrically spaced from the emitter region; A base region doped with N-type impurities in the N-type epitaxial layers which are outer periphery of the first to fourth collector regions, and formed in a quadrangular line shape surrounding the outer periphery of the first to fourth collector regions; A P-type impurity is doped into the N-type epi layer, which is an outer circumference of the base region, and is connected to the P-type substrate and includes a fifth collector region formed in a substantially quadrangular line shape surrounding the outer circumference of the base region. Characterized in that made.

Here, an oxide film is formed on a surface of the N-epi layer, and an emitter metal is contacted to the emitter region through the oxide film, and the first to fourth collectors are respectively connected to the first to fourth collector regions. The metal is in contact, the base metal is in contact with a predetermined region of the base region, and the fifth collector metal is in contact with a predetermined region of the fifth collector region.

In addition, the emitter region is formed in a planar circular shape, and the emitter metal is in contact with a region smaller than the emitter region.

Further, the first to fourth collector regions are formed in a circular shape with a plane facing the emitter region on a plane having the same center as the center of the emitter region.

In addition, to achieve the above object, a method of manufacturing a three-dimensional Hall element according to the present invention comprises the steps of providing a substantially plate-shaped P-type substrate; Forming an N-type epitaxial layer on the upper surface of the P-type substrate; Forming a P-type fifth collector region on the N-type epi layer so as to be connected to the P-type substrate and have a substantially quadrangular line shape in a plane; P-type impurities are doped into the N-type epitaxial layer, which is the center of the fifth collector region, to thereby dop the P-type impurities in a substantially circular emitter region and in four directions that are symmetrically spaced from the emitter region. Forming a fourth collector region; And doping an N-type impurity into an N-type epitaxial layer between the outer circumferences of the first to fourth collector regions and the fifth collector region to form a base region having an approximately quadrangular line shape. .

Here, after the forming of the base region, forming an oxide film having a predetermined thickness on the surface of the N-type epitaxial layer and photo / etching the oxide film to emit the emitter region, the first to fourth collector regions, and the base region. And contacting the metal with the fifth collector region.

As described above, according to the Hall element according to the present invention and the manufacturing method thereof, it is possible to calculate and process the displacement amount of the current flowing through the first to fourth collectors, and to recognize and locate the magnetic material in the X and Y axis coordinates. By calculating the displacement amount of the current flowing to the fifth collector, it is possible to recognize and locate the magnetic material in the Z-axis coordinates.

That is, in the present invention, four lateral PNP transistors (first to fourth collectors) and one vertical PNP transistor (fifth collector) are configured as one integrated circuit. Therefore, the influence of the lateral magnetic field is affected by the Hall effect on the current distribution of the respective lateral PNP transistors, and by calculating the magnitude of the current flowing in each lateral PNP transistor, the position as well as the presence or absence of magnetic material It means you can figure out. In addition, the vertical PNP transistor calculates a change value of the current flowing when a magnetic field is applied in the upper and lower directions of the device, thereby enabling the recognition of a three-dimensional magnetic material.

(Example)

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings such that those skilled in the art can easily implement the present invention.

Figure 2 is a plan view showing a three-dimensional Hall element 100 according to the present invention, Figure 3 is a cross-sectional view showing a three-dimensional Hall element 100 according to the present invention, Figure 4 is a three-dimensional hole according to the present invention An equivalent circuit diagram of the device 100 is shown.

As shown in the figure, the P-type substrate 2 in which the P-type impurity is doped in the single crystal silicon (Si) is provided in a substantially plate shape. An epitaxial layer 4 doped with N-type impurities to a predetermined thickness is formed on an upper surface of the P-type substrate 2. Of course, the N-type epi layer 4 is single crystal silicon formed by water vapor at a high temperature.

P-type impurities are doped in the center of the upper surface of the N-epi layer 4 to form an approximately circular emitter region 6 in plan view. In addition, at the outer circumference of the emitter region 6, P-type impurities are doped into the N-type epi layer 4 in four directions symmetrical about the emitter region 6 to form the first to fourth collector regions. (8a-8d) are formed. Here, the first to fourth collector regions 8a to 8d are formed in a circular shape such that a surface of the first to fourth collector regions 8a to 8d has the same center as the center of the emitter region 6 on the plane.

Meanwhile, an N-type epitaxial layer 4 which is an outer circumferential edge of the first to fourth collector regions 8a to 8d is doped with N-type impurities to cover an outer circumferential edge of the first to fourth collector regions 8a to 8d. The base region 10 is formed in the form of a square line.

Thus, the first to fourth collector regions 8a to 8d and the base region 10 are as if four lateral PNP transistors are arranged around the emitter region 6. That is, the current from the emitter region 6 is appropriately distributed to the first to fourth collector regions 8a to 8d and flows laterally. At this time, when the magnetic material is located near any one of the first to fourth collector regions 8a to 8d, the current flowing to the predetermined collector region is smaller than or equal to the current, and the current flowing to any other collector region is The value is increased.

Subsequently, a fifth collector region 12 is formed by doping P-type impurities into the N-type epitaxial layer 4 that is the outer circumference of the base region 10. That is, the fifth collector region 12 is connected to the P-type substrate 2 and is formed in a substantially quadrangular line shape surrounding the outer periphery of the base region 10.

Accordingly, the fifth collector region 12 and the base region 10 are as if one vertical PNP transistor is formed around the emitter region 6. That is, the current from the emitter region 6 flows into the fifth collector region 12, but in the vertical direction. In this case, when the magnetic material is positioned near or above the fifth collector region 12, the current flowing to the fifth collector region 12 becomes smaller, equal to, or larger depending on the position of the magnetic material.

Of course, the fifth collector region 12 also serves to electrically isolate each device 100.

Subsequently, an oxide film 14 having a predetermined thickness is formed on the surface of the N-type epitaxial layer 4. The oxide film 14 may be a conventional thermal oxide film or nitride film.

In addition, the emitter metal 16 is contacted to the emitter region 6 through the oxide film 14, and the first to fourth collectors are respectively connected to the first to fourth collector regions 8a to 8d. Metals 18a to 18d are contacted, base metal 20 is contacted to a predetermined region of the base region 10, and a fifth collector metal 22 is formed to a predetermined region of the fifth collector region 12. Is in contact.

Here, the metal may be conventional aluminum (Al) or copper (Cu).

In addition, the emitter metal 16 is in planar circular contact with a region smaller than the emitter region 6. Since the emitter metal 16 has a smaller contact area with the emitter region 6, the current flow efficiency is improved from the emitter region 6 due to a magnetic field, and therefore, the emitter metal 16 is preferably contacted with a minimum area. .

Here, Q1 to Q4 shown in FIG. 4 correspond to the first to fourth collector regions 8a to 8d, and Q5 corresponds to the fifth collector region 12. That is, Q1 to Q4 are affected by the presence or absence of magnetic material in the transverse direction, and Q5 is affected by the presence or absence of magnetic material in the up and down directions.

5A to 5G are explanatory views sequentially showing a method for manufacturing a three-dimensional Hall element according to the present invention.

First, as shown in FIG. 5A, a substantially plate-shaped P-type substrate 2 doped with P-type impurities in single crystal silicon is provided.

Subsequently, as shown in FIG. 5B, an N-type epitaxial layer 4 is formed on the upper surface of the P-type substrate 2 at a predetermined thickness. The epi layer 4 is also a single crystal silicon layer doped with a low concentration of N-type impurities.

Subsequently, as shown in FIG. 5C, a fifth P-type collector region 12 is formed in the N-type epitaxial layer 4 so as to be connected to the P-type substrate 2. That is, the fifth collector region 12 having a substantially quadrangular line shape on the plane is formed, which may be an element isolation region.

Subsequently, as shown in FIG. 5D, a P-type impurity is doped in the center of the N-type epi layer 4 to form an approximately circular emitter region 6 in plan view, and at the outer circumference thereof, the emitter is formed. The first to fourth collector regions 8a to 8d are formed by doping P-type impurities in four directions symmetric about the region 6.

Next, as shown in FIG. 5E, an N-type impurity is doped into the N-type epitaxial layer 4 between the outer circumferences of the first to fourth collector regions 8a to 8d and the fifth collector region 12. As a result, a base region 10 having a substantially quadrangular line shape is formed on a plane.

Accordingly, the first to fourth collector regions 8a to 8d of the outer periphery of the emitter region 6 become lateral PNP transistors, and the first of the outer periphery of the emitter region 6 to the center. The five collector regions 12 (8a to 8d) become vertical PNP transistors.

Here, the forming step of the base region 10 may be changed from the forming step of the emitter region 6 and the first to fourth collector regions 8a to 8d.

Subsequently, an oxide film 14 having a predetermined thickness is formed on the entire surface of the N-type epitaxial layer 4, and the oxide film 14 is subjected to the emitter region 6, first to first through a conventional photographic / etching process. Portions of the fourth collector regions 8a to 8d, the base region 10 and the fifth collector region 12 are exposed to the outside. In this state, a metal layer is formed on the surface of the oxide film 14 by an electron beam or sputtering method, and the emitter metal 16 and the first to fourth collector metals 18a to 18d are formed by a general photographic / etching process. ), The base metal 20 and the fifth collector metal 22 are formed, thereby forming the hall element 100 according to the present invention.

As described above, although the present invention has been described with reference to the above embodiments, the present invention is not limited thereto, and various modified embodiments may be possible without departing from the scope and spirit of the present invention.

Therefore, according to the Hall element and the manufacturing method thereof according to the present invention, it is possible to calculate the displacement amount of the current flowing through the first to fourth collectors to recognize and locate the magnetic material in the X and Y axis coordinates, and also to the fifth collector. By calculating the displacement amount of the current flowing in the to be able to recognize and position the magnetic material in the Z-axis coordinates, there is an effect that it is possible to determine the recognition position of the three-dimensional magnetic material.

Claims (5)

A substantially plate-shaped P-type substrate; An N-type epi layer formed on a top surface of the P-type substrate; An emitter region formed by doping a P-type impurity in the center of an upper surface of the N-epi layer; First to fourth collector regions formed by doping P-type impurities in four directions symmetrically spaced from the emitter region; A base region doped with N-type impurities in the N-type epitaxial layers which are outer periphery of the first to fourth collector regions, and formed in a quadrangular line shape surrounding the outer periphery of the first to fourth collector regions; A P-type impurity is doped into the N-type epi layer, which is an outer circumference of the base region, and is connected to the P-type substrate and includes a fifth collector region formed in a substantially quadrangular line shape surrounding the outer circumference of the base region. Three-dimensional Hall element made by. The method of claim 1, wherein an oxide film is formed on a surface of the N-epi layer, and an emitter metal is contacted to the emitter region through the oxide film, and a first to the first to fourth collector regions, respectively. And a fourth collector metal contacted, a base metal contacted to a predetermined region of the base region, and a fifth collector metal contacted to a predetermined region of the fifth collector region. The 3D Hall element of claim 1, wherein the first to fourth collector regions are formed in a circular shape having a plane facing the emitter region on a plane and having the same center as the center of the emitter region. Providing a substantially plate-shaped P-type substrate; Forming an N-type epitaxial layer on the upper surface of the P-type substrate; Forming a P-type fifth collector region on the N-type epi layer so as to be connected to the P-type substrate and have a substantially quadrangular line shape in a plane; P-type impurities are doped into the N-type epitaxial layer, which is the center of the fifth collector region, to thereby dop the P-type impurities in a substantially circular emitter region and in four directions that are symmetrically spaced from the emitter region. Forming a fourth collector region; And forming a base region in the form of a quadrilateral line by doping N-type impurities into an N-type epitaxial layer between the outer circumferences of the first to fourth collector regions and the fifth collector region. Method of preparation. 5. The method of claim 4, wherein after forming the base region, forming an oxide layer having a predetermined thickness on the N-type epitaxial layer and photographing / etching the oxide layer to form the emitter region or the first to fourth collectors. And contacting the metal to the region, the base region, and the fifth collector region.