KR100390727B1 - Organic electroluminescent device comprising crosslinked polyimide layer as inter organic layer - Google Patents
Organic electroluminescent device comprising crosslinked polyimide layer as inter organic layer Download PDFInfo
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- KR100390727B1 KR100390727B1 KR10-2001-0001537A KR20010001537A KR100390727B1 KR 100390727 B1 KR100390727 B1 KR 100390727B1 KR 20010001537 A KR20010001537 A KR 20010001537A KR 100390727 B1 KR100390727 B1 KR 100390727B1
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- thin film
- electroluminescent device
- organic electroluminescent
- crosslinked polyimide
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- 239000004642 Polyimide Substances 0.000 title claims abstract description 38
- 229920001721 polyimide Polymers 0.000 title claims abstract description 38
- 239000010410 layer Substances 0.000 title description 17
- 239000012044 organic layer Substances 0.000 title 1
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 3
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 3
- 125000002877 alkyl aryl group Chemical group 0.000 claims abstract description 3
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 3
- 125000003118 aryl group Chemical group 0.000 claims abstract description 3
- 125000004104 aryloxy group Chemical group 0.000 claims abstract description 3
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 3
- 125000000623 heterocyclic group Chemical group 0.000 claims abstract description 3
- 239000001257 hydrogen Substances 0.000 claims abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 3
- 239000011574 phosphorus Substances 0.000 claims abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 3
- 239000011593 sulfur Substances 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims description 37
- 150000004985 diamines Chemical class 0.000 claims description 16
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 239000003431 cross linking reagent Substances 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 9
- 239000000243 solution Substances 0.000 claims description 8
- 238000002347 injection Methods 0.000 claims description 6
- 239000007924 injection Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000005525 hole transport Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 1
- 239000011259 mixed solution Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000009477 glass transition Effects 0.000 description 6
- 239000007983 Tris buffer Substances 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- -1 aminophenyl Chemical group 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 2
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- ANSXAPJVJOKRDJ-UHFFFAOYSA-N furo[3,4-f][2]benzofuran-1,3,5,7-tetrone Chemical compound C1=C2C(=O)OC(=O)C2=CC2=C1C(=O)OC2=O ANSXAPJVJOKRDJ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- QKRKFLQMKFSUMG-UHFFFAOYSA-N 1,1'-biphenyl 4-phenylaniline Chemical group C1=CC=C(C=C1)C2=CC=CC=C2.C1=CC=C(C=C1)C2=CC=C(C=C2)N QKRKFLQMKFSUMG-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- RWRDLPDLKQPQOW-UHFFFAOYSA-N tetrahydropyrrole Substances C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/17—Carrier injection layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
- C09K2211/14—Macromolecular compounds
- C09K2211/1441—Heterocyclic
- C09K2211/1466—Heterocyclic containing nitrogen as the only heteroatom
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Electroluminescent Light Sources (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
본 발명은 기재상에 순차적으로 형성되어 있는 전극, 유기중간층 및 금속 전극을 포함하는 유기전기발광소자에 있어서, 상기 유기중간층이 하기 화학식 1의 가교된 폴리이미드를 포함하는 것을 특징으로 하는 유기전기발광소자를 제공한다.The present invention provides an organic electroluminescent device comprising an electrode, an organic intermediate layer and a metal electrode sequentially formed on a substrate, wherein the organic intermediate layer comprises a crosslinked polyimide of formula (1) Provided is an element.
상기 식에서,Where
A, B 및 X는 알킬, 아릴, 알킬아릴, 헤테로사이클릭, 알콕시, 아릴옥시, 탄소, 수소, 질소, 황 및 인으로 이루어진 군에서 선택되며,A, B and X are selected from the group consisting of alkyl, aryl, alkylaryl, heterocyclic, alkoxy, aryloxy, carbon, hydrogen, nitrogen, sulfur and phosphorus,
y는 3 내지 8의 정수이며,y is an integer from 3 to 8,
n 및 m은 1이상의 정수이다(m은 nym보다 작은 값을 가진다).n and m are integers greater than or equal to 1 (m has a value less than nym).
Description
본 발명은 내열성이 우수한 유기전기발광소자에 관한 것으로, 보다 상세하게는 가교결합된 폴리이미드층을 유기 중간층으로 포함하는 유기전기발광소자에 관한 것이다.The present invention relates to an organic electroluminescent device having excellent heat resistance, and more particularly to an organic electroluminescent device comprising a crosslinked polyimide layer as an organic intermediate layer.
최근 유기전기발광소자(organic electroluminescent device, OELD)의 안정성을 높이기 위해서 고분자 중에서 열안정성이 가장 우수한 폴리이미드가 OELD에 적용되고 있다. 예를 들어, 일본 특허공개공보 평3-274693호에서는 유기 발광층 및 전하수송층을 2종류의 단량체의 진공증착중합에 의하여 형성하였으며, 일본 특허공개공보 평4-93389호는 폴리이미드 유기전하수송층을 보고하였다. 또한, 일본 특허공개공보 평7-230881호는 실리콘을 포함한 폴리이미드를 포함하는 정공수송층을 보고하였고, 일본 특허공개공보 평9-153641호에는 정공수송 또는 발광 능력이 있는 단분자와 일반적인 절연성 폴리이미드를 혼합한 박막으로 이루어진 정공수송층 및 발광층이 개시되어 있다.Recently, in order to increase the stability of an organic electroluminescent device (OELD), polyimide having the highest thermal stability among polymers has been applied to OELD. For example, Japanese Patent Application Laid-Open No. 3-274693 forms an organic light emitting layer and a charge transport layer by vacuum deposition polymerization of two types of monomers, and Japanese Patent Application Laid-open No. Hei 4-93389 reports a polyimide organic charge transport layer. It was. In addition, Japanese Patent Application Laid-open No. Hei 7-230881 reports a hole transport layer containing polyimide containing silicon, and Japanese Patent Laid-Open No. Hei 9-153641 discloses monomolecular molecules having a hole transporting or luminescence ability and general insulating polyimide. A hole transport layer and a light emitting layer made of a thin film in which the mixture is disclosed are disclosed.
그러나 이들 특허에서 사용되는 폴리이미드는 선형 고분자로서 디언하이드라이드와 디아민을 습식 또는 건식으로 동시에 혼합 또는 진공증착한 후 선구체 박막을 제조한 후 열처리를 통해 제조하는 일반적인 방법에 의해 제조된 것이다. 따라서, 이렇게 제조된 선형 폴리이미드는 주쇄를 구성하는 디언하이드라이드 또는 디아민의 종류에 따라서 안정성의 지표가 되는 유리전이온도가 많이 변하게 되므로 내열성이 약해져, 원하는 전기적 특성(전자 또는 정공의 이동도), 발광색상, 그리고 발광효율 등이 우수한 단량체를 수득하기가 어렵다는 단점이 있다. 또한, 단일 폴리이미드 박막 뿐 아니라 복합 박막의 경우도, 첨가된 기능성 유기 단분자의 함량 및 종류에 따라서 박막의 안정성이 변하게 된다.However, the polyimide used in these patents is a linear polymer prepared by a general method of producing a precursor thin film by mixing or vacuum-depositing dianhydride and diamine by wet or dry at the same time, followed by heat treatment. Therefore, the linear polyimide thus prepared has a large change in glass transition temperature, which is an indicator of stability, depending on the kind of dianhydride or diamine constituting the main chain, so that the heat resistance is weakened, and thus the desired electrical properties (electron or hole mobility), There is a disadvantage that it is difficult to obtain a monomer having excellent emission color and luminous efficiency. In addition, in the case of a composite thin film as well as a single polyimide thin film, the stability of the thin film is changed depending on the content and type of the functional organic monomolecule added.
이에 본 발명에서는 폴리이미드 제조시 3관능성 이상의 관능기를 가지는 가교결합제를 첨가함으로써 가교된 폴리이미드 박막을 제조하여 보다 안정성이 높고 내열성이 우수한 소자를 개발하고자 하였다.Therefore, in the present invention, a polyimide thin film was prepared by adding a crosslinking agent having a trifunctional or higher functional group when producing polyimide to develop a device having higher stability and excellent heat resistance.
본 발명의 목적은 내열성이 우수한 폴리이미드 박막을 포함하는 유기전기발광소자를 제공하는 것이다.An object of the present invention is to provide an organic electroluminescent device comprising a polyimide thin film excellent in heat resistance.
도 1은 본 발명의 한 양태에 따른 유기전기발광소자의 개략적인 구조를 나타낸다.1 shows a schematic structure of an organic electroluminescent device according to an aspect of the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
a: 기판 b: 양극전극a: substrate b: anode electrode
c: 유기중간층 d:음극전극c: organic intermediate layer d: cathode electrode
상기 목적을 달성하기 위해, 본 발명에서는 투명기재상에 순차적으로 형성되어 있는 양극, 유기중간층 및 음극을 포함하는 유기전기발광소자에 있어서, 상기 유기중간층이 하기 화학식 1의 가교된 폴리이미드를 포함하는 것을 특징으로 하는 유기전기발광소자를 제공한다:In order to achieve the above object, in the present invention, in the organic electroluminescent device comprising an anode, an organic intermediate layer and a cathode sequentially formed on a transparent substrate, the organic intermediate layer comprises a cross-linked polyimide of the formula It provides an organic electroluminescent device, characterized in that:
화학식 1Formula 1
상기 식에서,Where
A, B 및 X는 알킬, 아릴, 알킬아릴, 헤테로사이클릭, 알콕시, 아릴옥시, 탄소, 수소, 질소, 황 및 인으로 이루어진 군에서 선택되며,A, B and X are selected from the group consisting of alkyl, aryl, alkylaryl, heterocyclic, alkoxy, aryloxy, carbon, hydrogen, nitrogen, sulfur and phosphorus,
y는 3 내지 8의 정수이며,y is an integer from 3 to 8,
n 및 m은 1이상의 정수이다(m은 nym보다 작은 값을 가진다).n and m are integers greater than or equal to 1 (m has a value less than nym).
본 발명의 가교된 폴리이미드 박막은 하기 반응식 1과 같이 형성될 수 있으며, 일반적으로 습식공정과 건식공정의 두가지 방법으로 제조될 수 있다.The crosslinked polyimide thin film of the present invention may be formed as in Scheme 1 below, and generally may be prepared by two methods, a wet process and a dry process.
상기식에서, x, A, B는 화학식 1에서 정의한 바와 같고, m은 nym보다 작은 정수이다.Wherein x, A, and B are as defined in Formula 1, and m is an integer smaller than nym.
우선, 습식 공정에서는, N-메틸-2-피롤리딘(NMP) 또는 디메틸아세테이트(DMAc)와 같은 반응용매에 녹인 디아민(4)과 가교제(2) 용액 및 디언하이드라이드(3)를 서로 혼합하여 반응시킴으로써 가교된 폴리이미드 선구체(5) 용액을 제조한 다음 얻어진 가교된 선구체 용액을 미리 준비한 투명전극이 코팅된 기판 또는 미리 정공주입층, 정공수송층, 또는 발광층 등이 코팅된 유기 또는 고분자 박막위에 스핀(spin) 코팅, 닥터-블레이딩(doctor-blading), 롤 코팅등과 같은 통상적인 방법으로 코팅한 후, 150℃ 이상의 적절한 온도에서 열이미드화시켜 가교된 폴리이미드(1) 박막을 제조할 수 있다. 가교된 폴리이미드 선구체 용액의 제조에서 디아민과 디언하이드라이드의 상대적인 반응속도에 따라 가교되는 정도가 반응초기에는 달라질 수 있으나, 시간이 지나면 평균적으로 가교제의 몰비 만큼 가교되게 된다.First, in the wet process, diamine (4) dissolved in a reaction solvent such as N-methyl-2-pyrrolidine (NMP) or dimethyl acetate (DMAc), a crosslinking agent (2) solution, and dianhydride (3) are mixed with each other. To prepare a crosslinked polyimide precursor (5) solution, and then to prepare a crosslinked precursor solution obtained by using a transparent electrode coated substrate or an organic or polymer coated with a hole injection layer, a hole transport layer, or a light emitting layer. Polyimide (1) thin film crosslinked by thermal imidization at a suitable temperature of 150 ° C or higher after coating with a conventional method such as spin coating, doctor-blading, roll coating, etc. on the thin film Can be prepared. In the preparation of the crosslinked polyimide precursor solution, the degree of crosslinking may vary depending on the relative reaction rate of diamine and dianhydride in the initial stage of the reaction.
또한, 건식 공정에서는, 가교제(2), 디언하이드라이드(3) 및 디아민(4)을 진공챔버의 증발원 또는 화학증착법(chemical vapor deposition, CVD) 챔버에 장착된 증기화 소스에 각각 장착한 후, 투명 전극 코팅된 기판상에 고진공에서 진공증착 가교화 중합반응(vapor deposition crosslinking polymerization, VDXP) 또는 이동 가스(carrier gas)가 존재하는 상태의 CVD 반응으로, 가교화된 선구체(5) 박막을 제조한 다음, 150℃ 이상의 온도에서 열이미드화시켜 가교된 폴리이미드(1) 박막을 제조할 수 있다.In the dry process, the crosslinking agent (2), the dianhydride (3) and the diamine (4) are respectively attached to an evaporation source of a vacuum chamber or a vaporization source mounted in a chemical vapor deposition (CVD) chamber, A crosslinked precursor (5) thin film was prepared by a CVD reaction in the presence of a vacuum deposition crosslinking polymerization (VDXP) or a carrier gas at high vacuum on a transparent electrode coated substrate. Then, thermally imidized at a temperature of 150 ° C. or higher may be used to prepare a crosslinked polyimide (1) thin film.
본 발명에서 사용되는 가교제에는 멜라민, 트리스(아미노페닐)아민, 테트라아미노페닐실리콘 및 테트라아미노페닐틴이 포함된다. 디언하이드라이드 및 디아민의 예는 본 발명자들이 선출원 발명인 대한민국 특허출원공개 제 2000-33543 호에 기재된 바와 같으며, 특히 디언하이드라이드로는 4.4'-(4,4'-이소프로필리데디페녹시)비스(프탈산 무수물) 및 피로멜트산 디언하이드라이드가 바람직하며, 디아민으로는 N,N'-디페닐-N,N'-비스(4-아미노비페닐)-(1,1'-비페닐)-4,4'-디아민(DBABBD)이 바람직하다. 또한 디언하이드라이드 대신에 폴리이미드를 만들 수 있는 염화이산(diacid chloride), 염 유도체, 감광성 기가 도입된 유도체 등도 사용가능하다.Crosslinking agents used in the present invention include melamine, tris (aminophenyl) amine, tetraaminophenylsilicone and tetraaminophenyltin. Examples of dianhydrides and diamines are as described in Korean Patent Application Laid-Open No. 2000-33543, the inventors of which are the inventors of the present invention, and in particular, dianhydrides are 4.4 '-(4,4'-isopropylidediphenoxy). Bis (phthalic anhydride) and pyromellitic acid dianhydride are preferred, and as diamine, N, N'-diphenyl-N, N'-bis (4-aminobiphenyl)-(1,1'-biphenyl) -4,4'-diamine (DBABBD) is preferred. In addition, diacid chloride, a salt derivative, or a derivative having a photosensitive group introduced therein may be used instead of dione hydride.
상기 가교제, 디안하이드라이드 및 디아민은 바람직하게는 0.02:1:0.98 내지 0.3:1:0.7의 비율로 사용할 수 있다.The crosslinking agent, dianhydride and diamine may preferably be used in a ratio of 0.02: 1: 0.98 to 0.3: 1: 0.7.
본 발명에 따른 가교된 폴리이미드 박막 제조시 단분자 또는 고분자 기능성 물질, 예를 들면 정공주입물질, 정공수송물질, 발광물질, 전자수송물질 등을 혼입시켜 복합박막으로 형성할 수도 있다.When preparing a crosslinked polyimide thin film according to the present invention, a single molecule or a polymer functional material, for example, a hole injection material, a hole transport material, a light emitting material, an electron transport material, or the like may be mixed to form a composite thin film.
상기와 같이 제조된 폴리이미드 박막상에 기타 유기 박막층 및 음극 등을 통상의 방법으로 코팅하여 유기전기발광소자를 제조할 수 있다.The organic electroluminescent device may be manufactured by coating the organic thin film layer, the cathode, and the like on a polyimide thin film prepared as described above in a conventional manner.
본 발명에 따른 가교된 폴리이미드 박막은 유기전기발광소자의 유기 중간층에 사용시 소자의 안정성을 크게 증대시킬 수 있다.The crosslinked polyimide thin film according to the present invention can greatly increase the stability of the device when used in the organic intermediate layer of the organic electroluminescent device.
이하 하기 실시예에 의하여 본 발명을 좀더 상세하게 설명하고자 한다. 단, 하기 실시예는 본 발명을 예시하기 위한 것일 뿐 본 발명이 이들만으로 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the following examples are only for illustrating the present invention and the present invention is not limited thereto.
실시예 1Example 1
습식방법으로 다음과 같이 가교된 폴리이미드 박막을 제조하였다.A crosslinked polyimide thin film was prepared by the wet method.
즉, 아르곤이 충전된 글러브박스(glove box)내에서 N,N'-디페닐-N,N'-비스(4-아미노비페닐)-(1,1'-비페닐)-4,4'-디아민(DBABBD) 8.5mmol과 멜라민 1mmol을 NMP에 녹인후 교반되고 있는 상태에서 10mmol의 4.4'-(4,4'-이소프로필리데디페녹시)비스(프탈산 무수물)이 용해된 NMP를 서서히 적가하여 선구체 용액을 제조하였다. 용액의 전체 농도는 약 2wt%정도 되게 하였다. 이 용액을 미리 준비한 ITO 유리기판에 3,000 rpm의 속도로 코팅한 후, 80 ℃에서 30분 동안 소프트-베이킹(soft-baking)하고 300 ℃에서 1시간 동안 열이미드화시켜 약 30nm 두께의 가교된 폴리이미드 정공주입 및 수송 박막을 제조하였다.Ie, N, N'-diphenyl-N, N'-bis (4-aminobiphenyl)-(1,1'-biphenyl) -4,4 'in a glove box filled with argon. NMP dissolved in 8.5 mmol of diamine (DBABBD) and 1 mmol of melamine in NMP, and then slowly added dropwise to NMP in which 10 mmol of 4.4 '-(4,4'-isopropylidediphenoxy) bis (phthalic anhydride) was dissolved. To prepare a precursor solution. The total concentration of the solution was about 2 wt%. The solution was coated on a pre-prepared ITO glass substrate at a rate of 3,000 rpm, then soft-baked at 80 ° C. for 30 minutes and thermally imidized at 300 ° C. for 1 hour to crosslink the crosslinked material having a thickness of about 30 nm. Polyimide hole injection and transport thin films were prepared.
상기 가교된 폴리이미드 박막 위에 음극으로서의 알루미늄을 약 1 X 10-2토르(torr)의 진공하에서 열증착하였다.Aluminum as the negative electrode was thermally deposited on the crosslinked polyimide thin film under vacuum of about 1 × 10 −2 torr.
이어서, 수득된 복합박막의 내열특성을 측정하기 위해서 캐패시턴스-온도(Capacitance-Temperature, C-T) 방법으로 400 ℃까지 스캔(scan)한 결과 400 ℃까지 유리전이온도에 해당하는 어떠한 완화거동(relaxation behavior)도 나타나지 않았다. 즉, 제조된 박막은 유리전이온도가 400 ℃ 이상으로서 안정함을 확인할 수 있었다.Subsequently, in order to measure the heat resistance of the obtained composite thin film, any relaxation behavior corresponding to the glass transition temperature up to 400 ° C. as a result of scanning to 400 ° C. using a capacitance-temperature (CT) method was obtained. Did not appear. That is, the prepared thin film was found to be stable as the glass transition temperature is 400 ℃ or more.
실시예 2Example 2
상기 실시예 1의 방법에 따라 가교된 폴리이미드 정공주입 및 수송 박막을 제조한 다음, 그 위에 녹색 발광물질인 트리스(8-하이드록시퀴놀리놀라토) 알루미늄(Alq3)를 40nm가 되게 진공증착한 후 음극으로서 리튬-알루미늄 합금(리튬함량 : 0.02%)을 진공증착하여 유기전기발광소자를 제조하였다.After preparing a cross-linked polyimide hole injection and transport thin film according to the method of Example 1, vacuum deposition of tris (8-hydroxyquinolinolato) aluminum (Alq 3 ), a green light emitting material thereon to 40nm Then, a lithium-aluminum alloy (lithium content: 0.02%) was vacuum-deposited as a negative electrode to prepare an organic electroluminescent device.
이렇게 제조된 소자의 켜짐 전압은 약 3V이였으며, 약 14V에서 12,000cd/m2의 높은 휘도를 얻었다.The turn-on voltage of the device thus manufactured was about 3V, and a high luminance of 12,000 cd / m 2 was obtained at about 14V.
실시예 3Example 3
건식방법으로 다음과 같이 가교된 폴리이미드 박막을 제조하였다. 즉, 피로멜리트산 디언하이드라이드, DBABBD, 트리스(아미노페닐)아민 가교제를 진공챔버 내의 3개의 저항가열식 도가니(crucible)에 0.2g씩 각각 담고, 증착속도를 조절하여 가교제 : 디언하이드라이드 : 디아민의 비율이 0.1:1:0.9가 되도록 증착하다가 전체 두께가 약 50nm가 될 때 증착을 중지하였다. 이렇게 제조된 가교된 선구체 박막을 실시예 1과 동일한 방법으로 이미드화시킨 후 얻어진 박막의 최종 두께는 약 27nm였으며, C-T 측정한 결과 400 ℃ 이하에서 역시 어떠한 완화거동도 나타나지 않았다. 즉, 제조된 진공박막의 유리전이온도도 400 ℃ 이상으로 매우 안정한 박막임을 확인할 수 있었다.A crosslinked polyimide thin film was prepared by the dry method. That is, the pyromellitic acid dianhydride, DBABBD, and tris (aminophenyl) amine crosslinking agents are each contained 0.2 g in three resistance heating crucibles in a vacuum chamber, and the deposition rate is controlled to control the crosslinking agent: dianhydride: diamine. The deposition was performed such that the ratio was 0.1: 1: 0.9, and the deposition was stopped when the total thickness became about 50 nm. The resulting crosslinked precursor thin film was imidated in the same manner as in Example 1 and the final thickness of the obtained thin film was about 27 nm, and C-T measurement showed no relaxation behavior below 400 ° C. That is, it was confirmed that the glass transition temperature of the prepared vacuum thin film is also very stable thin film at 400 ℃ or more.
실시예 4Example 4
상기 실시예 3의 방법에 따라 가교된 폴리이미드 정공주입 및 수송 박막을 제조한 다음, 그 위에 녹색 발광물질인 트리스(8-하이드록시퀴놀리놀라토) 알루미늄(Alq3)를 40nm가 되게 진공증착한 후 리튬-알루미늄 합금(리튬함량 : 0.02%)을 진공증착하여 유기전기발광소자를 제조하였다.After preparing the cross-linked polyimide hole injection and transport thin film according to the method of Example 3, vacuum deposition of tris (8-hydroxyquinolinolato) aluminum (Alq 3 ), a green light emitting material thereon to 40nm Then, a lithium-aluminum alloy (lithium content: 0.02%) was vacuum deposited to manufacture an organic electroluminescent device.
이렇게 제작된 소자의 켜짐 전압은 약 2.5V였으며, 약 16V에서 20,500cd/m2의 높은 휘도를 얻었다.The turn-on voltage of the fabricated device was about 2.5V, and high luminance of 20,500cd / m 2 was obtained at about 16V.
본 발명의 가교된 폴리이미드 박막을 포함하는 유기전기발광소자의 유리전이온도는 400 ℃ 이상으로, 기존의 유연한 분자가 포함된 선형 폴리이미드를 포함하는 유기전기발광소자의 유리전이온도가 200 ℃ 이하인 것에 비하여 안정성 및 내열성이 향상되어 다양한 구조의 유연한 분자를 안정하게 만들 수 있다.The glass transition temperature of the organic electroluminescent device including the crosslinked polyimide thin film of the present invention is 400 ℃ or more, the glass transition temperature of the organic electroluminescent device comprising a linear polyimide containing the existing flexible molecules is 200 ℃ or less Compared to the above, stability and heat resistance can be improved to make flexible molecules of various structures stable.
또한 본 발명의 가교된 폴리이미드 박막은 유기전기발광소자 뿐만 아니라 유기 트랜지스터(transistor), 태양전지(solar cell) 등의 유기 반도체 소자 전반에 사용될 수 있다.In addition, the crosslinked polyimide thin film of the present invention can be used not only in organic electroluminescent devices but also in organic semiconductor devices such as organic transistors and solar cells.
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US5443921A (en) * | 1990-03-26 | 1995-08-22 | Idemitsu Kosan Co., Ltd. | Thin film electroluminescence device and process for production thereof |
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KR19990031400A (en) * | 1997-10-10 | 1999-05-06 | 김덕중 | Manufacturing method of organic light emitting device with improved luminous efficiency |
KR19990036536A (en) * | 1997-10-10 | 1999-05-25 | 김덕중 | Low voltage driving organic light emitting device manufacturing method and apparatus used therein |
KR19990080774A (en) * | 1998-04-21 | 1999-11-15 | 정명식 | Luminescent polyimide, a method for producing the same, and a display element employing the luminescent polyimide as a coloring material |
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