KR100385969B1 - Micro actuator for ink jet printer head using multi-layer shape memory alloy and fabricating method thereof - Google Patents
Micro actuator for ink jet printer head using multi-layer shape memory alloy and fabricating method thereof Download PDFInfo
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- KR100385969B1 KR100385969B1 KR10-1999-0028239A KR19990028239A KR100385969B1 KR 100385969 B1 KR100385969 B1 KR 100385969B1 KR 19990028239 A KR19990028239 A KR 19990028239A KR 100385969 B1 KR100385969 B1 KR 100385969B1
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- Prior art keywords
- shape memory
- memory alloy
- insulating film
- silicon substrate
- alloy layer
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- 229910001285 shape-memory alloy Inorganic materials 0.000 title claims abstract description 87
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000006396 nitration reaction Methods 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000003252 repetitive effect Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 238000001816 cooling Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1648—Production of print heads with thermal bend detached actuators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14032—Structure of the pressure chamber
- B41J2/1404—Geometrical characteristics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14016—Structure of bubble jet print heads
- B41J2/14088—Structure of heating means
- B41J2/14112—Resistive element
- B41J2/14129—Layer structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1601—Production of bubble jet print heads
- B41J2/1603—Production of bubble jet print heads of the front shooter type
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1623—Manufacturing processes bonding and adhesion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1632—Manufacturing processes machining
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
Abstract
본 발명은 하부공간부가 형성된 실리콘기판과; 상기 실리콘기판의 상부에 상기 하부공간부를 덮도록 형성된 절연막과; 상기 절연막의 상부에 형성된 형상기억합금층을 포함하여 구성되며, 상기 절연막과 상기 형상기억합금층이 교대로 반복적으로 적층되어 복수층의 구조를 형성하는 것을 특징으로 하는 복수층의 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터 및 그 제조방법에 관한 것으로, 절연막과 형상기억합금층이 2층 이상 형성되므로 반복사용에 따른 피로현상이 개선되어 반복적 기계특성이 우수하며 액츄에이터로서의 진동특성이 균일하게 유지되는 효과가 있다.The present invention is a silicon substrate formed with a lower space; An insulating film formed on the silicon substrate to cover the lower space; And a shape memory alloy layer formed on the insulating film, wherein the insulating film and the shape memory alloy layer are alternately repeatedly stacked to form a structure of a plurality of layers. The present invention relates to a micro actuator for an inkjet printer head and a method of manufacturing the same, wherein two or more layers of insulating films and shape memory alloy layers are formed, thereby improving fatigue due to repeated use, thereby providing excellent repetitive mechanical characteristics and maintaining uniform vibration characteristics as actuators. It works.
Description
본 발명은 마이크로 액츄에이터 및 그 제조방법에 관한 것으로, 보다 상세하게는 형상기억합금을 이용하여 잉크젯 프린터 헤드용 마이크로 액츄에이터를 제조하는 방법 및 그 방법에 의하여 제조된 마이크로 액츄에이터에 관한 것이다.The present invention relates to a micro actuator and a method of manufacturing the same, and more particularly, to a method of manufacturing a micro actuator for an inkjet printer head using a shape memory alloy, and a micro actuator manufactured by the method.
형상기억합금은 MEMS(microelectromechanical system)분야에 적용하기 위해 연구되어 왔으며, 마이크로 펌프와 와이어형태의 기계구조물에 많이 응용되고 있다.Shape memory alloys have been studied to be applied to the field of microelectromechanical systems (MEMS), and they are widely applied to mechanical structures in the form of micro pumps and wires.
이러한 형상기억합금을 잉크젯 프린터 헤드에 적용하기 위한 연구가 진행되고 있으나 잉크젯 프린터 헤드용으로 명확하게 적용되고 있지는 않다.Research into applying the shape memory alloy to an inkjet printer head has been conducted, but it is not clearly applied for the inkjet printer head.
형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터는 도 1에 도시한 바와 같이 일반적으로 하부공간부가 형성된 실리콘기판(10)과, 실리콘기판(10)의 상부에 하부공간부를 덮도록 형성된 절연막(12)과, 절연막(12)의 상부에 형성된 형상기억합금층(14)으로 구성된다.As shown in FIG. 1, a micro actuator for an inkjet printer head using a shape memory alloy generally includes a silicon substrate 10 having a lower space portion and an insulating layer 12 formed to cover the lower space portion on the silicon substrate 10. And the shape memory alloy layer 14 formed on the insulating film 12.
상기와 같은 구성의 마이크로 액츄에이터를 제조하기 위해서는 먼저 실리콘기판(10)의 표면을 열산화시켜 절연막(12)인 실리콘산화막을 형성한다.In order to manufacture the micro actuator having the above configuration, first, the surface of the silicon substrate 10 is thermally oxidized to form a silicon oxide film, which is the insulating film 12.
형성된 절연막(12)의 상부에는 형상기억합금층을 형성할 금속성분들을 동시에 스퍼터링 또는 진공증착 등의 방법으로 멀티코팅하여 하나의 형상기억합금층(14)을 형성한다.The shape memory alloy layer 14 is formed on the formed insulating layer 12 by multi-coating the metal components to form the shape memory alloy layer by sputtering or vacuum deposition at the same time.
형성된 형상기억합금층(14)을 노(furnace)에서 가열하거나 전류를 공급하여 가열하는 방법에 의하여 열처리하고 냉각시키는 공정을 반복하여 형상기억합금층(14)에 형상기억특성을 부여한다.The shape memory alloy layer 14 is repeatedly subjected to heat treatment and cooling by the method of heating the formed shape memory alloy layer 14 by heating in a furnace or by supplying a current, thereby imparting shape memory characteristics to the shape memory alloy layer 14.
형상기억합금층(14)에 형상기억특성이 부여되면 실리콘기판(10)을 에칭하여 하부공간부를 형성한다.When the shape memory characteristic is applied to the shape memory alloy layer 14, the silicon substrate 10 is etched to form a lower space part.
에칭에 의하여 하부공간부가 형성되면 실리콘기판(10)의 내부응력에 의하여 절연막(12)이 휘게 되고, 따라서 형상기억합금층(14)도 휨변형된다.When the lower space portion is formed by etching, the insulating film 12 is bent due to the internal stress of the silicon substrate 10, and thus the shape memory alloy layer 14 is also warped and deformed.
상기와 같이 구성된 형상기억합금을 이용한 마이크로 액츄에이터를 적용한 잉크젯 프린터 헤드에서 전원이 인가되면 휨변형된 상태의 형상기억합금층(14)이 가열되고, 가열된 형상기억합금층(14)은 모상인 평평한 상태로 변화한다.When power is applied from the inkjet printer head to which the micro-actuator using the shape memory alloy configured as described above is applied, the shape memory alloy layer 14 in a warped state is heated, and the heated shape memory alloy layer 14 is flat. Change to state.
형상기억합금층(14)이 변형되는 과정에서 압력실의 용적이 감소되어 노즐을 통해 잉크가 분사되면서 인쇄를 행하게 된다.In the process of deforming the shape memory alloy layer 14, the volume of the pressure chamber is reduced, and ink is ejected through the nozzle to perform printing.
상기와 같은 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터를 반복하여 사용하는 경우에는 피로현상이 발생하게 된다. 피로현상이 발생하게 되면 형상기억합금층은 냉각된 상태에서 초기상태의 휨변형이 되지 못하고 가열시 반응도 느려지게 된다.When the micro-actuator for the ink jet printer head using the shape memory alloy as described above is used repeatedly, fatigue occurs. When the fatigue phenomenon occurs, the shape memory alloy layer will not bend the deformation of the initial state in the cooled state, the reaction is also slowed down when heating.
따라서 반복적인 기계특성이 열화되며, 따라서 액츄에이터로서의 진동특성이 균일하지 못하여 인쇄상태가 나빠지는 문제점이 있다.Therefore, the repetitive mechanical characteristics are deteriorated, and thus there is a problem in that the vibration state as the actuator is not uniform and the printing state is deteriorated.
상기의 문제점을 해결하기 위한 본 발명은 절연막과 형상기억합금층을 복수층으로 형성함으로써 반복사용에 따른 피로현상을 개선하여 반복적 기계특성이 우수한 마이크로 액츄에이터 및 그 제조방법을 제공하는 것을 목적으로 한다.An object of the present invention for solving the above problems is to provide a micro-actuator excellent in repetitive mechanical properties by forming an insulating film and a shape memory alloy layer in a plurality of layers to improve the fatigue phenomenon due to repeated use and a method of manufacturing the same.
도 1은 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터의 일반적인 구조를 도시한 단면도,1 is a cross-sectional view showing a general structure of a micro actuator for an inkjet printer head using a shape memory alloy;
도 2a 내지 도 2h는 본 발명의 복수층의 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터의 제조방법의 공정을 개략적으로 도시한 공정도.2A to 2H are process drawings schematically showing a process of a method of manufacturing a micro actuator for an ink jet printer head using a multilayer memory alloy of the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 실리콘기판 12 : 절연막10 silicon substrate 12 insulating film
14 : 형상기억합금층 20 : 실리콘기판14: shape memory alloy layer 20: silicon substrate
22a, 22b, 22c : 절연막 24a, 24b, 24c : 형상기억합금층22a, 22b, 22c: insulating film 24a, 24b, 24c: shape memory alloy layer
26 : 하부공간부26: lower space part
상기의 목적을 달성하기 위한 본 발명은 실리콘기판을 제공하는 단계와; 상기 실리콘기판 상에 절연막을 형성하는 단계와 형상기억합금층을 형성하는 단계를 반복하여 복수층의 절연막 및 형상기억합금층을 형성하는 단계와; 상기 형상기억합금층을 열처리하여 형상기억특성을 부여하는 단계와; 상기 실리콘기판을 에칭하여 하부공간부를 형성하는 단계를 포함하여, 복수층의 절연막과 형상기억합금층을 가진 마이크로 액츄에이터를 제조하는 것을 특징으로 하는 복수층의 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터의 제조방법에 그 특징이 있다.The present invention for achieving the above object comprises the steps of providing a silicon substrate; Forming a plurality of insulating films and shape memory alloy layers by repeating forming an insulating film on the silicon substrate and forming a shape memory alloy layer; Heat-treating the shape memory alloy layer to impart shape memory characteristics; Forming a lower space by etching the silicon substrate, to manufacture a micro actuator having a plurality of insulating films and a shape memory alloy layer, wherein the micro actuator of the ink jet printer head using the plurality of shape memory alloys is manufactured. Its features are in the manufacturing method.
또한 본 발명은 하부공간부가 형성된 실리콘기판과; 상기 실리콘기판의 상부에 상기 하부공간부를 덮도록 형성된 절연막과; 상기 절연막의 상부에 형성된 형상기억합금층을 포함하여 구성되며, 상기 절연막과 상기 형상기억합금층이 교대로 반복적으로 적층되어 복수층의 구조를 형성하는 것을 특징으로 하는 복수층의 형상기억합금을 이용한 잉크젯 프린터 헤드용 마이크로 액츄에이터에 그 특징이 있다.In addition, the present invention is a silicon substrate formed with a lower space; An insulating film formed on the silicon substrate to cover the lower space; And a shape memory alloy layer formed on the insulating film, wherein the insulating film and the shape memory alloy layer are alternately repeatedly stacked to form a structure of a plurality of layers. Its features are micro actuators for ink jet printer heads.
이하 본 발명을 상세하게 설명한다.Hereinafter, the present invention will be described in detail.
기판으로는 실리콘기판을 사용한다.A silicon substrate is used as the substrate.
실리콘기판의 실리콘산화막(SiO2), 실리콘질화막(SiNx) 또는 실리콘산화막/질화막의 절연막을 형성하여 실리콘기판에 압축응력을 인가한다.A compressive stress is applied to the silicon substrate by forming an insulating film of a silicon oxide film (SiO 2 ), a silicon nitride film (SiN x ), or a silicon oxide film / nitride film of the silicon substrate.
절연막은 실리콘기판이 에칭되면 형상기억합금층이 응력에 의하여 휨변형하도록 한다.The insulating film causes the shape memory alloy layer to bend and deform due to stress when the silicon substrate is etched.
실리콘산화막 및 실리콘질화막을 형성하는 방법으로는 실리콘기판의 열산화(thermal oxidation), 열질화(thermal nitration), 화학증착(chemical vapordeposition), 스퍼터링, 스프레이 등의 방법을 사용한다.As a method of forming a silicon oxide film and a silicon nitride film, thermal oxidation, thermal nitration, chemical vapor deposition, sputtering, spraying, or the like of a silicon substrate is used.
실리콘산화막은 기판을 밀어주는 작용을 하고, 실리콘질화막은 기판을 당겨주는 작용을 하므로, 필요로 하는 내부응력의 크기에 따라 적절한 성분의 절연막을 형성한다.Since the silicon oxide film acts to push the substrate and the silicon nitride film pulls the substrate, an insulating film having an appropriate component is formed according to the magnitude of internal stress required.
절연막의 성분 및 성분비를 조절함으로써 실리콘기판을 에칭한 후 형성되는 형상기억합금층의 형상을 평판형(flat type), 오목형(concave type), 볼록형(convex type) 등 다양한 형상으로 조절할 수 있다.The shape of the shape memory alloy layer formed after the silicon substrate is etched by adjusting the component and the component ratio of the insulating film can be adjusted to various shapes such as flat type, concave type, and convex type.
형성된 절연막의 상부에 형상기억합금층의 구성원소를 진공증착시키거나 스퍼터링하여 형상기억합금층을 형성한다.The shape memory alloy layer is formed by vacuum depositing or sputtering the elements of the shape memory alloy layer on the formed insulating film.
형상기억합금층을 형성하기 위한 구성성분으로는 2성분계 또는 3성분계를 사용하는 것이 바람직하다.As a component for forming the shape memory alloy layer, it is preferable to use a two-component system or a three-component system.
2성분계의 형상기억합금층을 형성하는 경우에는 형상기억합금의 구성성분으로 니켈(Ni)과 티타늄(Ti)을 사용하는 것이 바람직하다.When forming the two-component shape memory alloy layer, it is preferable to use nickel (Ni) and titanium (Ti) as components of the shape memory alloy.
3성분계의 형상기억합금층을 형성하는 경우에는 형상기억합금의 구성성분으로 니켈, 티타늄 및 구리(Cu)를 사용하거나 니켈, 티타늄 및 하프늄(Hf)을 사용하는 것이 바람직하다.When forming the three-component shape memory alloy layer, it is preferable to use nickel, titanium, and copper (Cu) or nickel, titanium, and hafnium (Hf) as components of the shape memory alloy.
형성된 형상기억합금층의 상부에 다시 절연층을 형성하고, 형성된 절연층의 상부에 다시 형상기억합금층을 형성한다.An insulating layer is formed again on the formed shape memory alloy layer, and a shape memory alloy layer is formed again on the formed insulating layer.
상기 절연층 및 형상기억합금층을 형성하는 단계를 원하는 층수가 형성될 때까지 반복한다.The forming of the insulating layer and the shape memory alloy layer is repeated until the desired number of layers is formed.
형성된 복수층의 형상기억합금층을 열처리하고 냉각하는 공정을 반복함으로써 구성성분과 열탄성변태특성을 조절하여 형상기억합금층에 형상기억특성을 부여한다.By repeating the process of heat-treating and cooling the formed plurality of shape memory alloy layers, the shape memory characteristics are given to the shape memory alloy layer by adjusting the constituent components and thermoelastic transformation characteristics.
부여되는 형상기억특성은 열처리온도, 열처리시간, 열처리방법, 냉각시간 및 공정의 반복정도에 따라 달라진다.The shape memory characteristics to be given vary depending on the heat treatment temperature, heat treatment time, heat treatment method, cooling time and repeatability of the process.
형상기억특성이 부여된 형상기억합금은 필요에 따라 소정의 패턴으로 패터닝할 수 있다.The shape memory alloy to which the shape memory characteristic is given can be patterned in a predetermined pattern as necessary.
형상기억합금을 패터닝하는 방법으로는 섀도우마스크(Shadow mask)나 포토레지터(Photoresister)를 사용하여 마스킹한 후 에칭하여 패터닝하는 방법을 사용한다.The shape memory alloy is patterned by using a shadow mask or a photoresister and then etching and patterning the shape memory alloy.
형상기억합금을 원하는 패턴으로 패터닝한 후 필요에 따라 형상기억합금의 하부에 형성된 절연막을 패터닝할 수 있다.After patterning the shape memory alloy in a desired pattern, an insulating film formed under the shape memory alloy may be patterned as necessary.
이산화규소층을 패터닝하는 방법은 형상기억합금을 패터닝하는 방법과 동일한 방법을 사용한다.The method of patterning the silicon dioxide layer uses the same method as the method of patterning the shape memory alloy.
필요한 경우에는 형상기억합금과 절연막이 형성된 기판에 원하는 패턴으로 전극을 형성한다. 이때 전극의 재료로는 알루미늄(Al), 금(Au), 백금(Pt), 은(Ag)중 선택하여 사용하는 것이 일반적이다.If necessary, electrodes are formed in a desired pattern on the substrate on which the shape memory alloy and the insulating film are formed. In this case, the material of the electrode is generally selected from aluminum (Al), gold (Au), platinum (Pt), silver (Ag).
상기 공정들이 완료되면 실리콘기판에 패턴을 형성한 후 실리콘기판을 전체적으로 에칭하여 하부공간부를 형성한다.When the above processes are completed, a pattern is formed on the silicon substrate, and then the silicon substrate is etched as a whole to form a lower space part.
에칭법으로는 습식에칭법과 건식에칭법을 모두 사용할 수 있으며, 형상기억합금을 이용한 마이크로 액츄에이터를 적용한 잉크젯 프린터 헤드의 전체적인 구조를 소형화하기 위해서는 건식에칭법을 사용하는 것이 바람직하다.As the etching method, both the wet etching method and the dry etching method can be used. In order to reduce the overall structure of the inkjet printer head to which the micro actuator using the shape memory alloy is applied, it is preferable to use the dry etching method.
이때 실리콘기판의 표면에 형성된 절연막이 에칭중지층의 기능을 한다.At this time, the insulating film formed on the surface of the silicon substrate functions as an etching stop layer.
형상기억합금이 형성된 실리콘기판을 에칭하여 하부에 공간부를 형성하게 되면 실리콘기판의 내부응력에 의하여 절연막이 휘게 되고 그에 따라 형상기억합금층도 휨변형을 하여 휨변형한 상태로 있게 된다.When the silicon substrate on which the shape memory alloy is formed is etched to form a space under the silicon substrate, the insulating film is bent due to the internal stress of the silicon substrate, and thus the shape memory alloy layer is warped and deformed.
상기와 같이 방법에 의하여 형성된 형상기억합금을 이용한 마이크로 액츄에이터는 실리콘기판과; 실리콘기판에 형성된 하부공간부과; 상기 실리콘기판의 상부에 상기 하부공간부를 덮도록 형성된 절연막과; 상기 절연막의 상부에 형성된 형상기억합금층을 포함하여 구성되며, 상기 절연막과 형상기억합금층이 교대로 반복적으로 적층되어 복수층의 구조를 형성한다.The micro-actuator using the shape memory alloy formed by the method as described above comprises a silicon substrate; A lower space portion formed on the silicon substrate; An insulating film formed on the silicon substrate to cover the lower space; And a shape memory alloy layer formed on the insulating film, wherein the insulating film and the shape memory alloy layer are alternately repeatedly stacked to form a plurality of layers.
형성된 형상기억합금을 이용한 마이크로 액츄에이터를 적용한 잉크젯 프린터 헤드에서 전원이 인가되어 휨변형된 상태의 형상기억합금이 가열되고, 가열된 형상기억합금은 모상인 평평한 상태로 변화한다.In the inkjet printer head to which the micro-actuator using the formed shape memory alloy is applied, power is applied to the shape memory alloy in a warped state, and the heated shape memory alloy is changed into a flat state.
형상기억합금이 변형되는 과정에서 압력실의 용적이 감소되면서 노즐을 통하여 잉크가 분사되어 인쇄를 행하게 된다.As the shape memory alloy is deformed, the volume of the pressure chamber is reduced and ink is ejected through the nozzle to perform printing.
도 2a 내지 도 2h는 본 발명의 제조방법에 의하여 3층의 절연막과 형상기억합금층을 형성하는 일실시예를 개략적으로 도시한 것이다.2A to 2H schematically illustrate an embodiment of forming an insulating film and a shape memory alloy layer of three layers by the manufacturing method of the present invention.
실리콘기판(20)의 상부에 절연막(22a)을 형성하고, 절연막(22a)의 상부에 형상기억합금층(24a)을 형성한다.An insulating film 22a is formed over the silicon substrate 20, and a shape memory alloy layer 24a is formed over the insulating film 22a.
형상기억합금층(24a)의 상부에 절연막(22b)을 형성하고, 절연막(22b)의 상부에 형상기억합금층(24b)을 형성한다.The insulating film 22b is formed on the shape memory alloy layer 24a, and the shape memory alloy layer 24b is formed on the insulating film 22b.
형상기억합금층(24b)의 상부에 절연막(22c)을 형성하고, 절연막(22c)의 상부에 형상기억합금층(24c)을 형성한다.The insulating film 22c is formed over the shape memory alloy layer 24b, and the shape memory alloy layer 24c is formed over the insulating film 22c.
형성된 형상기억합금층들(24a)(24b)(24c)을 열처리 및 냉각하는 공정을 반복하여 형상기억특성을 부여한다.Repeated heat treatment and cooling of the formed shape memory alloy layers 24a, 24b, and 24c give the shape memory characteristics.
형상기억합금층(24a)(24b)(24c)에 형상기억특성을 부여한 후 실리콘기판(20)을 에칭하여 하부공간부(26)을 형성한다. 하부공간부(26)이 형성되면 실리콘기판의 내부응력에 의하여 절연막(22) 및 형상기억합금층(24)이 휨변형을 하게 된다.After imparting shape memory characteristics to the shape memory alloy layers 24a, 24b, and 24c, the silicon substrate 20 is etched to form the lower space portion 26. When the lower space portion 26 is formed, the insulating film 22 and the shape memory alloy layer 24 are warped by the internal stress of the silicon substrate.
상기의 실시예에 의하여 형성된 마이크로 액츄에이터는 도 2h에 도시된 바와 같이, 하부공간부(26)이 형성된 실리콘기판(20)과, 실리콘기판의 상부에 형성된 절연막들(22a)(22b)(22c)과, 절연막의 상부에 절연막들과 교대로 형성된 형상기억합금층들(24a)(24b)(24c)로 구성된다.As shown in FIG. 2H, the micro actuator formed according to the above embodiment includes a silicon substrate 20 having a lower space portion 26 and insulating films 22a, 22b, and 22c formed on the silicon substrate. And shape memory alloy layers 24a, 24b and 24c formed alternately with the insulating films on the insulating film.
상기와 같은 본 발명은 절연막과 형상기억합금층이 2층 이상 형성되므로 반복사용에 따른 피로현상이 개선되어 반복적 기계특성이 우수하며, 따라서 액츄에이터로서의 진동특성에 균일성이 유지되는 효과가 있다.In the present invention as described above, since two or more layers of the insulating film and the shape memory alloy layer are formed, the fatigue phenomenon is improved due to repeated use, and thus the repetitive mechanical characteristics are excellent, and thus the uniformity in the vibration characteristics as the actuator is maintained.
Claims (9)
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