KR100371251B1 - Solid state imaging device - Google Patents

Abstract

PURPOSE: A solid state pickup device used for electronic endoscope is provided to comprise LEDs to use the LEDs as light sources, without installing separate light sources, thereby realizing a simple structure with a small size while photographing a dark place. CONSTITUTION: More than one LED(3) is comprised. A light-oriented controller(20) is provided on top of the LED(3), and controls an emitted light such that the emitted light cannot be incident on a pickup area of a solid state pickup device(1). The light-oriented controller(20) consists of plural layers. The plural layers include the first layer supplied on the LED(3). The first layer has a bigger refractive index than the second layer supplied around the first layer.

Description

Solid State Imaging Device {SOLID STATE IMAGING DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid state image pickup device, in particular, a solid state image pickup device having a simple structure, a small size and a dark image, and suitable for use in an electronic endoscope.

As shown in FIG. 19 as an electronic endoscope, a small solid-state image pickup device is provided at the tip of the endoscope scope to take out an image in the form of an electric signal.

In the figure, (a) is an endoscope scope, (b) is a solid-state image pickup device installed at a position slightly inward from the tip of the scope (a), and the power supply voltage is supplied from a signal processing system 12 outside the scope (a). At the same time, the imaging signal is sent to the signal processing system 12. (c) and (c) are light guides which emit light received from the light source system 13 outside the scope (a) through the scope (a) from the end surface of the scope (a), for example, an optical fiber fiber).

(d) denotes an objective lens disposed in front of the solid state image pickup device (b), and (e) denotes an air inlet for removing dirt on the objective lens. Air is supplied. (f) is also a water inlet, and ejects the water supplied by the air delivery water meter 14. (g) is a wiring for connecting between the solid state image pickup device and the signal processing system 12. 15 denotes a control system.

And (h) is a television monitor, and (i) is a recording device.

By the way, with respect to the electronic endoscope, the demand for miniaturization from the user side is not ceased. The maker side intends to comply with the demand for miniaturization of the solid state imaging element. However, the miniaturization of the solid state imaging element alone does not satisfy the demand. The reason is that although the solid state image pickup device can be miniaturized due to the development of microfabrication technology, the conventional electronic endoscope requires a light source to be installed separately from the solid state image pickup device.

SUMMARY OF THE INVENTION The present invention has been made to solve such a problem, and an object thereof is to provide a solid state image pickup device having a simple structure, a small size and a dark image, and suitable for an electronic endoscope.

1 is a plan view showing one embodiment of a solid state image pickup device of the present invention.

2 is a sectional view showing one example of formation of a light emitting element.

3 is a sectional view showing another example of formation of a light emitting element.

4 is a plan view showing the main parts of another embodiment of the solid state image pickup device of the present invention.

5 is a sectional view showing one example of formation of the light directing member.

6 to 8 are cross-sectional views showing another example of formation of the light directing member.

9 is a sectional view showing one example of formation of a light shielding portion.

10 is a plan view showing another example of formation of the light shielding portion.

11 and 12 are sectional views showing another example of formation of the light shielding portion.

13 to 16 are cross-sectional views showing another example of formation of the light directing member.

17 is a sectional view showing another example of formation of the light shielding portion.

18 is a block diagram showing an application example of the solid state image pickup device of the present invention.

19 is a block diagram showing a conventional electronic endoscope.

* Explanation of symbols for main parts of the drawings

(1): solid state imaging device, (3): light emitting element, (3r), (3b), (3g): light emitting element having different light emission colors, (4): semiconductor substrate.

The solid state image pickup device of the present invention is characterized by including a light emitting element and means for preventing the light from the light emitting element from being incident on the imaging area.

The solid state image pickup device of the present invention is characterized in that the light emitting element is integrally formed on the surface portion of the semiconductor substrate on which the solid state image pickup device is formed.

The solid state image pickup device of the present invention is characterized in that the light emitting element is adhered to the surface of the semiconductor substrate on which the solid state image pickup device is formed.

The solid state image pickup device of the present invention is characterized by having a plurality of light emitting devices that emit different colors.

The solid state image pickup device of the present invention is characterized in that a light shielding portion for preventing light from the light emitting element from entering the image pickup portion is provided.

The solid state image pickup device of the present invention is characterized in that a light directing member is provided on the surface of the light emitting device.

The solid state image pickup device of the present invention is characterized in that the light directing member is formed of an on-chip micro lens.

The solid state image pickup device of the present invention is characterized in that the light directing member is formed by a combination of films having different refractive indices.

The solid state image pickup device of the present invention is characterized by being used as an electronic endoscope.

The solid-state image pickup device of the present invention includes at least one light emitting device and a light directivity provided on the light emitting device to control the emitted light to prevent the emitted light from entering the imaging area of the solid state image pickup device. A control means, said light directivity control means comprising a plurality of layers, said plurality of layers comprising a first layer provided over said light emitting element and having a refractive index of a second layer provided around said first layer. It is characterized by having a higher refractive index than.

The solid state image pickup device of the present invention comprises a plurality of imaging sensors on a surface of a semiconductor body, wherein the plurality of imaging sensors each serve as pixels, comprising a plurality of vertical signal lines, one horizontal signal line, and an output section. An imaging area; And illumination means for illuminating an object directed to the surface of the semiconductor body and sensed by the imaging area, wherein the lighting means is provided on the same surface of the semiconductor body where the imaging area is provided. And at least one illumination means located on opposite sides of the imaging area.

A solid-state imaging device of the present invention is a solid-state imaging device for obtaining an image of an object, comprising: a semiconductor substrate having a solid-state CCD imaging array on its surface; And a plurality of light emitting diodes on the semiconductor surface on the opposite side of the imaging array to illuminate the objects when the object is in front of the semiconductor surface and faces the semiconductor surface.

The solid-state imaging device of the present invention is an electronic endoscope solid-state imaging device that obtains an image of an object, wherein the semiconductor substrate has a solid-state CCD imaging array on its surface, and the object is on the front surface of the semiconductor surface and faces the semiconductor surface. And a plurality of light emitting diodes on the surface of the semiconductor on the opposite side of the imaging array to illuminate the object.

According to the solid state image pickup device of the present invention, since the solid state image pickup device itself has a light emitting element, the light emitting element can be used as a light source, and the light source does not need to be provided as a separate component from the solid state image pickup device.

Therefore, the structure is simple and it is possible to image a small and dark place.

According to the solid state image pickup device of the present invention, the light emitting element can be manufactured in the manufacturing process of the solid state image pickup device, and the step of attaching the solid state image pickup device to the light emitting element is unnecessary. Therefore, it is possible to further reduce the size of the solid-state imaging device having the light emitting element used as the light source, and to reduce the number of assembly steps.

According to the solid state image pickup device of the present invention, the light emitting element formed separately from the solid state image pickup device is bonded onto the surface of the solid state image pickup device, so that a light emitting device having characteristics not obtained when the semiconductor substrate having the solid state image pickup device is formed as a substrate is used as a light source. It can be used as. Therefore, the light intensity of a light source and the freedom degree of selection of a light color can be expanded.

According to the solid state image pickup device of the present invention, since the light emitting device has a plurality of light emitting elements that emit different colors, the illumination light can be made white or a color close thereto, and is suitable for imaging a true color or a color close to it or a subject. Images can be played back in color.

According to the solid state image pickup device of the present invention, since a light shielding portion is provided for preventing the light from the light emitting element from entering the image pickup portion, the light emitted from the light emitting element does not enter the image pickup portion, The occurrence of smears can be avoided.

According to the solid state image pickup device of the present invention, since the light directing member is provided on the surface of the light emitting element, the light emitted from the light emitting element is condensed forward through the light directing member, so that the utilization rate of the light is improved and flare is generated. It can also be reduced.

According to the solid state image pickup device of the present invention, since the light directing member is formed of an on-chip microlens, the light directing member can be easily formed such that it can be formed simultaneously with the on-chip microlens of the imaging unit.

According to the solid state image pickup device of the present invention, since the light directing member is formed by a combination of films having different refractive indices, the light directing member can be easily formed.

According to the solid state image pickup device of the present invention, since the solid state image pickup device is applied to an electronic endoscope, it is possible to provide an electronic endoscope with a compact and simple structure. In addition, the degree of freedom in selecting the color and intensity of the illumination light is increased, and the illumination light can be made into a white color or a color close thereto or a color suitable for imaging of a subject by a combination of different light emitting elements. An electronic endoscope capable of reproducing a subject image in color can be provided.

Next, the solid state image pickup device of the present invention will be described in detail according to the illustrated embodiment.

1 is a plan view showing the main parts of one embodiment of the solid state image pickup device of the present invention.

Reference numeral 1 denotes a solid state image pickup device, and includes image sensors 2, 2,... , An imaging unit 11 comprising a vertical CCD 8, a horizontal CCD 9, and an output unit 10, the light emitting elements 3, 3... . Is installed.

According to such a solid state image pickup device 1, the light emitting elements 3, 3, ... are used as a light source for illumination and are projected from the light emitting elements 3, 3, ... Imaging light can be used for imaging by the imaging section 11 of the solid state imaging device 1.

That is, since the solid state image pickup device itself has a light emitting element, the light emitting element can be used as a light source, and the light source does not need to be provided as a separate component from the solid state image pickup device.

Therefore, the structure is simple and it is possible to image a small and dark place.

In addition, since the imaging section 11 and the light emitting elements 3, 3, ... can be arranged in close proximity, the light emitted from the light emitting elements 3, 3, ... can be effectively used. Can be used for lighting.

2 shows an example of the formation of a light emitting element, (4) is a P-type silicon semiconductor substrate on which the solid state image pickup device 1 is formed, and (5) is an N-type region selectively formed on the surface of this semiconductor substrate. The light emitting element (LED) is formed by the N-type region 5 and the semiconductor substrate 1.

According to such a solid state image pickup device, a light emitting element can also be easily produced by the manufacturing process of the solid state image pickup device. Therefore, the light emitting device can be incorporated without increasing the manufacturing process of the solid state imaging device.

In addition, it has not been possible to manufacture a light emitting device that emits light in the visible region using a silicon semiconductor substrate for a long time. However, it has been confirmed by an experiment by Professor Koshida and others of the Tokyo University of Agriculture and Technology that the visible light can be generated by changing the properties of the material by chemically treating the substrate surface to form a porous type.

More specifically, a light emitting device for generating light (orange) having a wavelength of 650 nm and a light emitting device for generating light (yellow) of 620 nm using a P-type semiconductor substrate can be produced, and a blue light having a wavelength of 400 nm The generation of light can also be realized.

Therefore, it is possible to form the light emitting elements 3, 3, ... on the semiconductor substrate 4 of the solid state image pickup device 1, almost without changing the size of the solid state image pickup device 1, In addition, it is possible to incorporate the light emitting elements 3, 3, ... with little increase in the manufacturing process.

3 is a cross-sectional view showing another example of formation of the light emitting element 3.

The solid state image pickup device is made by adhering a light emitting element 3 formed entirely differently through the insulating film 6 to the surface of the semiconductor substrate 4 on which the solid state image pickup device 1 is formed. (7) and (7) are electrodes of the light emitting element 3.

According to such a solid state image pickup device, a light emitting element 3 formed by using a material different from that of the semiconductor substrate 4 on which the solid state image pickup device 1 is formed as a semiconductor substrate can be incorporated, and the intensity of illumination light and the range of light selection can be incorporated. You can widen it.

In other words, it is possible to fabricate a light emitting device that generates light in the visible region using a silicon semiconductor substrate. However, since silicon has an indirect transition type in a band structure, at least in current technology, gallium having a direct transition band structure is used. The light emitting efficiency is lower than that of light emitting devices made of compound semiconductors such as arsenic. Moreover, the selection range of the emission color is narrow.

However, as shown in FIG. 3, when the light emitting element 3 is formed separately from the solid state imaging element 1, one formed of the compound semiconductor can be used as the light emitting element 3, so that the light emitting element ( The selection range for the light emission intensity and the light emission color of 3) is not narrowed.

The number of light emitting elements 3 may be one or plural. However, when the number of light emitting elements 3 is one, the color of the illumination light is limited to the color of light emitted by the single light emitting element 3.

However, when the number of the light emitting elements 3 is plural, white illumination can be performed by selecting one of the light emitting elements 3, 3, ... that emits different colors. This is illustrated in FIG. 4, where (3r) is a light emitting device generating red color, (3b) is a light emitting device generating blue color, and (3g) is a light emitting device generating green color. The three primary colors can be emitted by the light emitting elements 3r, 3b, and 3g, so that the subject can be captured and reproduced in the original color.

Further, even when the light emitting element 3 generating red, the light emitting element 3 generating yellow, and the light emitting element 3 generating blue are combined, white light can be obtained as long as the light intensity is properly balanced. This is because green light can be obtained with yellow light and blue light.

However, the light emitting colors of the light emitting elements 3, 3, ... are not necessarily strictly white light as a whole. Even if the illumination light is close to the white light, the subject can be captured and reproduced with colors close to the original.

In addition, when only the shape of a subject can be grasped, it does not necessarily mean that illumination light should be white light or the color close to it. Therefore, in that case, the color restrictions of the light emitting element 3 are small. In addition, when using non-visible light such as infrared light as illumination light instead of visible light is suitable for imaging, the light emitting elements 3, 3, ... which generate such invisible light are used. You can use

In the solid state image pickup device of the present invention, the light emitting elements 3, (3), ... (or (3r), (3b), (3g), ...) are configured to focus forward the light emitted from them. can do.

For example, the solid-state element shown in FIG. 5 is an on-chip microlens 22 that will be the light directing member 20 through the planarization film 21 on the surface of the light emitting element 3 formed in the semiconductor substrate 4. ). The on-chip microlens 22 on the light emitting element 3 can be formed simultaneously with the on-chip microlens 23 provided on the sensor 2 on the imaging unit 11 side.

In this figure, reference numeral 24 denotes a transfer electrode made of polycrystalline silicon of the vertical CCD 8, 25 denotes a transfer channel region of the vertical CCD 8, and 26 denotes a vertical CCD 8; It is an Al light shielding layer which shields. Reference numeral 27 denotes one electrode of the light emitting element 3. This electrode 27 can be formed of a metal film such as Al or a transparent conductive film sufficient to transmit light. Reference numeral 28 is an insulating film.

According to the solid state image pickup device shown in FIG. 5, the light L from each light emitting element 3 is collected by the on-chip microlens 22 and emitted forward. Therefore, the utilization rate of light improves and flare by the light from the light emitting element 3 can be prevented.

As the light directing member 20 provided on the surface of each light emitting element 3, as shown in FIG. 6, the insulating films in which refractive indices differ from each other are combined, ie, the insulating film 31 of large refractive index n1 is made small in the center. The insulating film 32 of refractive index n2 can be formed in the circumference. As the insulating film 31 having a large refractive index n1, a plasma SiN film (n1 = 2.0) and an SiO2 film (n2 = 1.45) can be used as the insulating film 32 having a small refractive index n2, and these films 31 and 32 are solid. The film used for forming an imaging element can be used. According to this configuration, the light L from the light emitting element 3 can be refracted at the interface between the two insulating films 31 and 32 to focus on the front.

As the light directing member 20, as shown in FIG. 8, an insulating film 32 having a small refractive index n2 and an insulating film 31 having a large refractive index n1 are sequentially stacked on the surfaces of the light emitting elements 3 in common. Can be formed. Also in this configuration, the light can be refracted at the interface between the L-transfer insulating films 32 and 31 from the light emitting elements 3 to condense the light to the front.

As the light directing member 20, the on-chip microlens 22 shown in Fig. 5 and the film structure of the insulating films 31 and 32 shown in Figs. For example, the light directing member 20 of FIG. 7 forms a film structure by the insulating films 31 and 32 of FIG. 6, and forms the on-chip microlenses 22 of FIG. Configure.

According to this configuration, since the light L from each light receiving element 3 is refracted at the interface between the insulating films 31 and 32, and is condensed by the on-chip microlens 22 again, the light can be focused more.

13, 14, 15, and 16 separately form light emitting elements 3, (3), ... (or (3r), (3b), (3g), ...) An example in which the light directing member 20 is applied to one solid state image pickup device is shown.

13 shows an example in which the light directing member 20 is formed of an on-chip micro lens 22. The on-chip micro lens 22 is formed on each light emitting element 3 through the planarization film 21.

FIG. 14 shows an example in which the light directing member 20 is formed of a combination of insulating films 31 and 32 having different refractive indices as in FIG. An insulating film 31 having a large refractive index n1 and an insulating film 32 having a small refractive index n2 are formed through the planarization film 21.

FIG. 15 is an example in which the light directing member 20 is formed by laminating insulating films 31 and 32 having different refractive indices as in FIG. Two stacked insulating films 32 and 31 are formed through the planarization film 21.

16 shows an example in which the light directing member 20 is formed by a combination of the on-chip microlenses 22 and the films 31 and 32 having different refractive indices.

In any of the examples in FIGS. 13 to 16, as described in FIGS. 4, 5, 7, and 6, the light L from the light emitting element 3 is condensed forward, and the The improvement and prevention of flare can be aimed at.

In the solid state image pickup device of the present invention, light from the light emitting elements 3, (3), ... (or (3r), (3b), (3g), ...) is applied to the inside of the semiconductor substrate 4; A light shielding part can be formed to prevent diffusion and direct incident on the imaging part 11. This light shielding portion is formed between the image capturing portion 11 and the light emitting element 3, particularly near the light emitting element 3.

9 is an example in which a light shield is provided. In this example, vertical grooves 35 are formed at positions corresponding to the vicinity of the light emitting element 3 between the imaging section 11 and the light emitting element 3 of the semiconductor substrate 4, and in the vertical grooves 35 For example, the light shielding portion 34 is formed by embedding a metal layer 36 such as Al. This light shielding portion 34 can be formed in common throughout each light emitting element 3.

According to this structure, the light which diffuses in the semiconductor substrate 4 from the light emitting element 3 does not directly enter into the imaging part 11 by the light shielding part 34 by the metal layer 36. Therefore, generation of smear due to light diffusing in the semiconductor substrate 4 can be prevented.

10 shows another example of the light shield 34. In this example, an annular groove 37 is formed in the semiconductor substrate 4 so as to surround each light emitting element 3 in plan view. In this annular groove 37, a metal layer such as Al, for example, is formed. 36 is embedded to form a light shield 34.

According to this configuration, the light from the light emitting element 3 can be prevented from diffusing into the semiconductor substrate 4 and incident on the imaging section 11, and at the same time, the light is reflected by the light shielding portion 34, thereby emitting light density. Can increase.

11 shows another example of the light shield. In this example, the inclined groove 38 is formed in the vicinity of the light emitting element 3 of the semiconductor substrate 4 to extend to the lower part of the light emitting element. In the inclined groove 38, for example, Al deposition or tungsten The light shielding portion 34 is formed by embedding the metal layer 36 by selective CVD or the like.

12 shows another example of the light shield. In this example, an inverted mesa type groove 39 extending to the lower portion of the light emitting element 3 is formed in the vicinity of the light emitting element 3 of the semiconductor substrate 4, and in this groove 39, For example, the light shielding portion 34 is formed by embedding the metal layer 36 by tungsten selective CVD.

The light shielding portions 34 of FIGS. 11 and 12 may be formed so as to surround each light emitting element 3 or may be formed on both sides of each light emitting element 3.

The inclined groove 38 and the inverted mesa type groove 39 can be formed by selecting a crystal orientation of the semiconductor substrate.

In the example of FIG. 11 and FIG. 12, since the light shielding part 34 extends so that it may enter into the lower part of the light emitting element 3, the light from the light emitting element 3 is prevented from entering the imaging part 11 more. can do. In addition, it is possible to further increase the light emission density.

In the case of the solid-state imaging device in which the light emitting element 3 is formed separately, as shown in FIG. 17, the vicinity of the light emitting element 3 in the planarization film 21 where the light emitting element 3 is matched. At the position, for example, the light shielding portion 34 by the metal layer 36 such as Al can be formed.

Although not shown, this light shielding part 34 may surround each light emitting element 3.

The light shield 34 described above can be formed in combination with the above-described light directing member 20 as shown in FIGS. 5 and 16.

In addition, as the light shielding portion, for example, as indicated by the broken line in FIG. 9, at a position corresponding to the position between the image capturing portion 11 and the light emitting element 3, the light shielding element 3 is formed on the outside. It is also possible to form the light shielding portion 41 protruding toward. The light shielding portion 41 may be formed integrally with the light shielding portion 34 or may be formed separately.

By providing the light shielding portion 41, the light emitted from the light emitting element 3 to the outside is prevented from entering the imaging unit 11 with the light in the lateral direction, and the generation of smear due to the light in the lateral direction is prevented. can do.

It is possible to form this light shielding part 41 so as to surround only the imaging part 11 side or the light emitting element 3.

In addition, although the metal layer 36 was used as the light shielding parts 34 and 41 of the above example, it can also be formed by the member with a big light absorption rate.

18 is a block diagram showing an example applied to the solid state image pickup device and the electronic endoscope of the present invention.

In this figure, (a) is an endoscope scope, (1) is a solid-state image pickup device according to the present invention installed at a position slightly inward from a tip in the scope (a), and a signal processing system 12 outside the scope (a). Is received from the power supply voltage, and the imaging signal is sent to the signal processing system 12.

(d) denotes an objective lens disposed in front of the solid state image pickup device 1, and (e) denotes an air inlet for removing dirt on the objective lens. Air is supplied. Similarly, (f) is a water inlet, and ejects the water supplied by the air delivery water meter 14. (g) is a wiring connecting between the solid state image pickup device 1 and the signal processing system 12. Reference numeral 15 denotes a control system, (h) a television monitor, and (i) a recording device.

According to the electron endoscope, since the solid state image pickup device 1 of the present invention has a light emitting device (not shown small in Fig. 5), the light source system is unnecessary, and the light guide is also unnecessary.

Therefore, the scope (a) can be made thinner than the conventional one by the unnecessary part of the light guide.

Of course, since the light emitting element 3 receives the power supply voltage of the solid state image pickup device as a power supply voltage and emits light, it is not necessary to provide a line in particular for transmitting the power supply voltage for lighting the light emitting element 3.

Incidentally, the application range of the solid state image pickup device of the present invention is not necessarily limited to the electron endoscope, and the solid state image pickup device of the present invention can be applied to general imaging in a dark place. It is also conceivable to apply to a microscope so that the captured image is reproduced on the television monitor h.

The solid state image pickup device of the present invention is characterized by including a light emitting device and means for preventing the light from the light emitting device from being incident on the imaging area.

Therefore, according to the solid state imaging device of the present invention, since the solid state image pickup device itself has a light emitting element, the light emitting element can be used as a light source for illumination, and the light source does not need to be provided as a separate component from the solid state image pickup device.

Therefore, the structure is simple and it is possible to image a small and dark place.

The solid state image pickup device of the present invention is characterized in that the light emitting element is formed integrally with the surface portion of the semiconductor substrate on which the solid state image pickup device is formed.

Therefore, according to the solid state image pickup device of the present invention, the light emitting element can be manufactured during the manufacturing process of the solid state image pickup device, so that the step of attaching the solid state image pickup device to the light emitting device is unnecessary. Therefore, it is possible to further reduce the size of the solid-state imaging device having the light emitting element used as the light source, and to reduce the number of assembling steps.

In the solid state image pickup device of the present invention, the light emitting element is bonded onto the surface of the semiconductor substrate on which the solid state image pickup device is formed.

Therefore, according to the solid state image pickup device of the present invention, since the light emitting element formed separately from the solid state image pickup device is adhered on the surface of the solid state image pickup device, light emission with characteristics that cannot be obtained when the semiconductor substrate on which the solid state image pickup device is formed is a semiconductor substrate. An element can be used as a light source. Therefore, the light intensity of a light source and the freedom degree of selection of a light color can be expanded.

The solid state image pickup device of the present invention is characterized by having a plurality of light emitting elements emitting different colors.

Therefore, according to the solid state image pickup device of the present invention, since it has a plurality of light emitting elements emitting light of different colors, the illumination light can be made white or a color close to it, and the subject image can be reproduced in a true color or a color close thereto.

The solid state image pickup device of the present invention is characterized in that a light shielding portion for preventing light from the light emitting element from being incident on the image pickup portion is provided.

Therefore, according to the solid state image pickup device of the present invention, the light emitted from the light emitting device can be prevented from entering the imaging unit, and generation of smear due to light of the light emitting device can be avoided.

The solid state image pickup device of the present invention is characterized in that a light directing member is provided on the surface of the light emitting device.

Therefore, according to the solid state image pickup device of the present invention, the light emitted from the light emitting element can be condensed forward through the light directing member, improve the utilization rate of the light, and reduce the occurrence of flare due to the light from the light emitting element. .

The solid state image pickup device of the present invention is characterized in that the light directing member is formed of an on-chip micro lens.

Therefore, according to the solid state image pickup device of the present invention, it is possible to easily form the light directing member such that it can be formed simultaneously with the on-chip microlens of the imaging unit.

The solid state image pickup device of the present invention is characterized in that the light directing member is formed of a combination of films having different refractive indices.

Therefore, according to the solid state image pickup device of the present invention, the light directing member can be easily formed.

The solid state image pickup device of the present invention is used as an electronic endoscope.

Therefore, according to the solid state image pickup device of the present invention, since the solid state image pickup device is applied to an electron endoscope, it is possible to provide an electron endoscope with a compact and simple structure, and also has a high degree of freedom in selecting color and intensity of illumination light and different illumination light. The combination of the light emitting elements can make the color white or the color close to that, and reproduce the color of the dark to the color close to it or the subject image suitable for imaging of the subject.

Claims (17)

As a solid state imaging device, One or more light emitting devices; And Light directivity control means provided on the light emitting element and controlling the emitted light to prevent the emitted light from entering the imaging area of the solid state image pickup device; Including, The light directivity control means consists of a plurality of layers, the plurality of layers including a first layer provided over the light emitting element, the first layer having a refractive index of a second layer provided around the first layer. Solid state image pickup device having a larger refractive index than. A plurality of imaging sensors on the surface of the semiconductor body, wherein the plurality of imaging sensors each serve as a pixel; an imaging area comprising a plurality of vertical signal lines, one horizontal signal line, and an output section; And Illumination means for illuminating a target object directed to the surface of the semiconductor body and sensed by the imaging area, wherein the lighting means is provided on the same surface of the semiconductor body where the imaging area is provided; Including, The lighting means is located at least one opposite to both sides of the imaging area Solid state imaging device. The method of claim 2, And a solid state image pickup device including the diode. The method of claim 2, And said illuminating means is provided on said surface of said semiconductor body using a layer comprising said illuminating means. The method of claim 2, And said illuminating means is adjacent to said imaging area. The method of claim 2, And said illuminating means comprises a plurality of light emitting elements, wherein said first light emitting element of said light emitting element emits first light of a color different from the second light emitted by said second light emitting element of said light emitting element. The method of claim 6, And a third light emitting element of the light emitting element for emitting a third light of a color different from the first and second light. The method of claim 7, wherein And the colors of the first, second and third lights are green, red and blue, respectively. The method of claim 2, And a light blocking means positioned between the imaging area and the illumination means to prevent light emitted by the illumination means from being incident on the imaging area. The method of claim 9, And the trench is filled with a material containing a metal and provided in the semiconductor body. The method of claim 9, And a projection provided on the semiconductor body by the light blocking means. The method of claim 2, And a light directivity control means provided on the illumination means and controlling the emitted light to prevent the emitted light from entering the imaging area. The method of claim 12, And said optical directivity control means comprises a micro lens. The method of claim 12, Wherein said light directivity control means is comprised of a plurality of layers, said plurality of layers comprising a first layer provided over said light emitting element, said first layer having a refractive index of a second layer provided around said first layer Solid state image pickup device having a larger refractive index than. The method of claim 12, The light directivity control means comprises a plurality of layers, the plurality of layers comprising a first layer provided over the light emitting element, the first layer being more than the refractive index of the second layer provided over the first layer Solid state image pickup device having a small refractive index. 3. The solid state image pickup device according to claim 2, wherein said solid state image pickup device comprises an electronic endoscope. As a solid-state imaging device to obtain an image of the object, A semiconductor substrate having a solid-state CCD imaging array on its surface; And A plurality of light emitting diodes on the semiconductor surface opposite to the imaging array to illuminate the object when the object is in front of the semiconductor surface and faces the semiconductor surface Solid-state imaging device comprising a.