KR100359079B1 - Transmission frequency an amplifier for radio communication system - Google Patents
Transmission frequency an amplifier for radio communication system Download PDFInfo
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- KR100359079B1 KR100359079B1 KR1020000085026A KR20000085026A KR100359079B1 KR 100359079 B1 KR100359079 B1 KR 100359079B1 KR 1020000085026 A KR1020000085026 A KR 1020000085026A KR 20000085026 A KR20000085026 A KR 20000085026A KR 100359079 B1 KR100359079 B1 KR 100359079B1
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/03—Constructional details, e.g. casings, housings
- H04B1/034—Portable transmitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/02—Transmitters
- H04B1/04—Circuits
- H04B2001/0408—Circuits with power amplifiers
Abstract
본 발명은 무선통신기기용 송신주파수 증폭장치를 개시한다.The present invention discloses a transmission frequency amplification apparatus for a wireless communication device.
본 발명은, 상면에 열전도층이 형성된 메인 보드와; 메인 보드의 상면에 마련되며, 유전층과 이 유전층의 상,하부에 도포되는 열전도층으로 이루어지며, 중심면에는 캐비티가 형성된 회로기판과; 회로기판의 캐비티내에 위치되며, 보조 열전도층을 통해 회로기판의 하부 열전도층 상면에 안착되는 IC칩과; 회로기판의 상부에 전면적으로 IC칩의 양측 외면을 감싸는 형태로 도포되는 몰딩층;으로 이루어진 것을 특징으로 하는 것으로서, IC칩이 회로기판의 캐비티상에 안착되는 것이어서, 메인 보드에 직접적으로 안착되는 구조를 취하고 있다.The present invention, the main board with a heat conductive layer formed on the upper surface; A circuit board provided on an upper surface of the main board and having a dielectric layer and a thermal conductive layer applied to upper and lower portions of the dielectric layer, and having a cavity formed at a center surface thereof; An IC chip positioned in a cavity of the circuit board and seated on an upper surface of the lower thermal conductive layer of the circuit board through the auxiliary thermal conductive layer; A molding layer is formed on the upper surface of the circuit board to cover the outer surface of the both sides of the IC chip; formed, characterized in that the IC chip is seated on the cavity of the circuit board, the structure directly seated on the main board Is taking.
따라서 작동시 발생되는 열이 직접적으로 메인 보드에 전달되어 방열되는 구조를 취함으로써 신속한 방열이 가능하고, 열 방출경로가 작은 직경을 이루지 않고 큰 폭의 캐비티로 이루어짐으로써 열 방출 병목 현상이 야기되지 않아 이를 통해서도 신속한 방열 효과를 도모할 수 있게된다.Therefore, the heat generated during operation is transferred directly to the main board to dissipate heat, which enables rapid heat dissipation, and the heat dissipation path is not made of a small diameter, but a large cavity, so that no heat dissipation bottleneck is caused. This also allows for rapid heat dissipation.
따라서 회로부품의 열화를 방지하여 제품의 신뢰성을 향상시킬 수 있는 이점이 있다.Therefore, there is an advantage that can improve the reliability of the product by preventing deterioration of the circuit components.
Description
본 발명은 무선 통신기기에 관한 것으로서, 보다 상세하게는 송신신호를 증폭하기 위한 송신주파수 증폭장치에 관한 것이다.The present invention relates to a wireless communication device, and more particularly, to a transmission frequency amplifier for amplifying a transmission signal.
일반적으로 무선 통신기기의 송신신호 증폭장치(Power Amplifier Module;이하 PAM이라 약칭함)는 안테나를 통해 송신신호를 증폭시키는 것으로서, 무선통신기기 예컨대 휴대폰의 성능에 커다란 영향을 미치고 있다.In general, a power amplifier module (hereinafter referred to as PAM) of a wireless communication device amplifies a transmission signal through an antenna, and has a great influence on the performance of a wireless communication device such as a mobile phone.
이러한 PAM의 상세한 구조를 보면, 상면에 열전도층(11)이 형성된 메인 보드(main board;10)를 구비한다.In the detailed structure of the PAM, a main board 10 having a heat conductive layer 11 formed on an upper surface thereof is provided.
이 메인 보드(10)의 상부에는 중심 상면에 IC칩(30)이 열전도층(31)을 개재하여 안착되는 회로기판(20)이 위치되는 바, 이 회로기판(20)은 유전체층(21)과 이 유전체층(21)을 중심으로 상,하면에 도포되는 상,하 열전도층(22,23)으로 이루어진다.Above the main board 10 is a circuit board 20 on which the IC chip 30 is seated via the heat conducting layer 31 on the upper surface of the main board 10. The dielectric layers 21 are composed of upper and lower thermal conductive layers 22 and 23 applied to upper and lower surfaces.
그리고 IC칩(30)을 보호하기 위한 것으로서, 회로기판(20)의 상면에는 전면적으로 몰딩층(40)이 소정두께로 도포된다.In order to protect the IC chip 30, the molding layer 40 is coated on the entire surface of the circuit board 20 to a predetermined thickness.
한편, 회로기판(20)의 유전체층(21) 상에는 IC칩(30)이 구동할 때 발생되는 열을 메인 보드(10)를 통해 외부로 방열시키기 위한 것으로서, 도 2에서와 같이 소정직경으로 열 방출경로(via;21a)가 형성된다.On the other hand, on the dielectric layer 21 of the circuit board 20 to heat the heat generated when the IC chip 30 is driven through the main board 10 to the outside, as shown in FIG. A path via 21a is formed.
이러한 구성을 갖는 PAM은, IC칩(30)이 구동되고, 이에따라 발생되는 열이 열전도층(31)을 통해 회로기판(20)의 상부 열전도층(22)과 유전체층(21)을 열 방출경로(21a)를 통해 하부 열전도층(23)을 전달되고, 최종적으로 메인 보드(10)의 열전도층(11)을 통해 외부로 방열 됨으로써 고열에 의한 제품의 열화를 방지하도록 된 것이다.In the PAM having such a configuration, the IC chip 30 is driven, and heat generated therefrom passes through the heat conduction layer 31 and the upper heat conduction layer 22 and the dielectric layer 21 of the circuit board 20 through a heat dissipation path ( The lower thermal conductive layer 23 is transferred through 21a), and finally heat is radiated to the outside through the thermal conductive layer 11 of the main board 10 to prevent deterioration of the product due to high heat.
그러나 이러한 종래 PAM에 있어서는 IC칩(30)상에서 발생된 열이 메인보드(10)를 통해 외부로 방열되기 위한 경로가 복수의 열전도층(31,22,23)을 거쳐야 하고, 특히 매우 작은 직경을 갖는 열 방출경로(21a)를 통과하여야 함으로써 방열 효과가 미흡하며, 특히 열 방출경로(21a)상에서 열 방출을 위한 병목 현상이 야기되어 충분한 방열 효과를 얻지 못하는 문제점이 내재되어 있다.However, in such a conventional PAM, a path for heat dissipating to the outside through the main board 10 must pass through a plurality of heat conductive layers 31, 22, and 23, and particularly a very small diameter. The heat dissipation effect is insufficient by passing through the heat dissipation path 21a. In particular, a bottleneck for heat dissipation is caused on the heat dissipation path 21a.
따라서 고열에 의한 IC칩(30)의 열화를 초래하는 문제점이 내재되어 있다.Therefore, there is a problem that causes deterioration of the IC chip 30 due to high heat.
본 발명은 이와같은 종래의 제반 문제점을 해결하기 위하여 창출된 것으로서, IC칩으로부터 발생된 열을 바로 메인 보드를 통해 외부로 방열 시킬 수 있도록 함으로써 방열 효과를 배가시킬 수 있음으로써 제품의 열화를 미연에 방지하여 신뢰성을 향상시킬 수 있는 무선 통신기기용 송신주파수 증폭장치를 제공함에 그 목적이 있다.The present invention was created in order to solve such a conventional problem, it is possible to heat the heat generated from the IC chip to the outside directly through the main board by doubling the heat dissipation effect by not delaying the deterioration of the product in advance. It is an object of the present invention to provide a transmission frequency amplification apparatus for a wireless communication device that can improve the reliability by preventing.
도 1은 종래 송신주파수 증폭장치의 단면도.1 is a cross-sectional view of a conventional transmission frequency amplifier.
도 2는 요부 확대 평면도.2 is an enlarged plan view of the main portion.
도 3은 본 발명에 따른 송신주파수 증폭장치의 단면도.3 is a cross-sectional view of the transmission frequency amplifying apparatus according to the present invention.
도 4는 요부 확대 평면도.4 is an enlarged plan view of the main portion.
<도면의 주요부분에 대한 부호 설명><Description of Signs of Major Parts of Drawings>
100 : 메인 보드 110 : 열전도층100: main board 110: thermal conductive layer
200 : 회로기판 210 : 유전체층200: circuit board 210: dielectric layer
220,230 : 상,하부 열전도층220,230: upper and lower thermal conductive layer
240 : 캐비티 300 : IC칩240: cavity 300: IC chip
310 : 보조 열전도층 400 : 몰딩층310: auxiliary thermal conductive layer 400: molding layer
이와같은 목적을 달성하기 위하여 본 발명에 따른 무선 통신기기용 송신주파수 증폭장치는, 상면에 열전도층이 형성된 메인 보드와; 상기 메인 보드의 상면에 마련되며, 유전층과 이 유전층의 상,하부에 도포되는 열전도층으로 이루어지며, 중심면에는 캐비티가 형성된 회로기판과; 상기 회로기판의 캐비티내에 위치되며, 보조 열전도층을 통해 회로기판의 하부 열전도층 상면에 안착되는 IC칩과; 상기 회로기판의 상부에 전면적으로 IC칩의 양측 외면을 감싸는 형태로 도포되는 몰딩층;으로 이루어진 것을 그 특징으로 한다.In order to achieve the above object, a transmission frequency amplifier for a wireless communication device according to the present invention includes a main board having a heat conductive layer formed on an upper surface thereof; A circuit board provided on an upper surface of the main board and having a dielectric layer and a thermal conductive layer applied to upper and lower portions of the dielectric layer, and having a cavity formed at a center surface thereof; An IC chip positioned in a cavity of the circuit board and seated on an upper surface of a lower thermal conductive layer of the circuit board through an auxiliary thermal conductive layer; Characterized in that it consists of a molding layer that is applied in the form of covering the outer surface of the both sides of the IC chip on the entire upper surface of the circuit board.
본 발명의 바람직한 한 특징은, 상기 보조 열전도층은, 은 페이스트를 소정두께로 코팅하여 형성되는 것에 있다.One preferred feature of the present invention is that the auxiliary heat conductive layer is formed by coating a silver paste with a predetermined thickness.
본 발명의 바람직한 다른 한 특징은, 상기 IC칩을 감싸는 몰딩층의 중심 하면은 쐐기 형태로 회로기판상에 결합되는 것에 있다.Another desirable feature of the present invention is that the center lower surface of the molding layer surrounding the IC chip is coupled to the circuit board in the form of a wedge.
본 발명의 바람직한 또 다른 한 특징은, 상기 IC칩은 와이어 본딩을 통해 회로기판에 접속되는 것을 특Another preferred feature of the invention is characterized in that the IC chip is connected to the circuit board via wire bonding.
이와같은 본 발명의 특징적인 구성 및 이에따른 작용효과는 후술하는 첨부된 도면을 참조한 발명의 상세한 설명을 통해 더욱 명확해 질 것이다.Such a characteristic configuration and the resulting effects of the present invention will become more apparent from the following detailed description of the invention with reference to the accompanying drawings.
도 3은 본 발명에 따른 무선통신기기용 송신주파수 증폭장치의 단면도이고, 도 4는 요부 발췌 평면도이다.3 is a cross-sectional view of a transmission frequency amplification apparatus for a wireless communication device according to the present invention, Figure 4 is a plan view of the main parts.
이에 나타내 보인 바와 같이 본 발명에 따른 무선 통신기기용 송신주파수 증폭장치는, 크게 메인 모드(100)와 회로기판(200) 그리고 IC칩(300)과 몰딩층(400)으로 대별된다.As shown therein, the transmission frequency amplification apparatus for a wireless communication device according to the present invention is roughly divided into a main mode 100, a circuit board 200, an IC chip 300, and a molding layer 400.
메인 보드(100)의 상면에는 전면적으로 열전도층(110)이 형성된다.The thermal conductive layer 110 is formed on the entire surface of the main board 100 on the entire surface.
회로기판(200)은 메인 보드(100)의 상부에 위치되는 것으로서, 유전체층(210)과, 이 유전체층(210)의 상,하부에 도포되는 상,하부 열전도층(220,230)으로 이루어진다.The circuit board 200 is positioned above the main board 100 and includes a dielectric layer 210 and upper and lower thermal conductive layers 220 and 230 applied to upper and lower portions of the dielectric layer 210.
이때 특히 회로기판(200)의 중심 하면에는 소정폭으로 캐비티(cavity;240)가 형성된다.In this case, a cavity 240 is formed at a predetermined width on the center lower surface of the circuit board 200.
IC칩(300)은 회로기판(200)의 캐비티(240)상에 위치되는 것으로서, 하면에 도포되는 보조 열전도층(310)을 통해 회로기판(200)의 하부 열전도층(230)에 연결되어진다.The IC chip 300 is located on the cavity 240 of the circuit board 200 and is connected to the lower thermal conductive layer 230 of the circuit board 200 through the auxiliary thermal conductive layer 310 applied to the bottom surface. .
이때 보조 열전도층(310)은 은 페이스트(AG paste)를 소정두께로 도포하여 형성딘다.At this time, the auxiliary thermal conductive layer 310 is formed by applying a silver paste (AG paste) to a predetermined thickness.
또한 IC칩(300)은 와이어 본딩(wire bonding)을 통해 회로기판(200)상에 접속되어진다.In addition, the IC chip 300 is connected on the circuit board 200 through wire bonding.
몰딩층(400)은 IC칩(300)을 보호하기 위하여 회로기판(200)의 상면에 IC칩(300)의 양면을 감싸는 형태로 도포되는 것으로서, 특히 쐐기 형태로 회로기판(200)의 캐비티(240)상에 결합되는 구조를 취하고 있다.The molding layer 400 is coated to cover both sides of the IC chip 300 on the upper surface of the circuit board 200 in order to protect the IC chip 300. In particular, the molding layer 400 has a cavity (Wedge) of the circuit board 200. 240 is coupled to the structure.
이와같이 구성된 본 발명에 따른 무선통신기기용 송신주파수 증폭장치는, IC칩(300)의 작동에 따라 열이 발생되면, 이 열이 IC칩(300)의 하부에 도포된 보조 열전도층(310)과 회로기판(200)의 하부 열전도층(230)을 거쳐 메인 보드(100)의 열전도층(110)으로 전달되면서 외부로 방열된다.The transmission frequency amplification apparatus for a wireless communication device according to the present invention configured as described above, when heat is generated in accordance with the operation of the IC chip 300, the heat is applied to the auxiliary thermal conductive layer 310 applied to the lower portion of the IC chip 300; The heat is transferred to the heat conduction layer 110 of the main board 100 through the lower heat conduction layer 230 of the circuit board 200 and radiated to the outside.
즉, IC칩(300)이 회로기판(200)의 캐비티(240)상에 마련되는 것이기 때문에 직접적으로 메인 보드(100)에 연결되는 구조를 취하고 있다.That is, since the IC chip 300 is provided on the cavity 240 of the circuit board 200, the IC chip 300 is directly connected to the main board 100.
따라서 작동시 발생되는 열이 단축된 열경로를 통해 메인 보드(100)로 전달되어 외부로 방열됨으로써 신속하게 열의 방열을 도모할 수 있게되는 것이다.Therefore, the heat generated during operation is transferred to the main board 100 through the shortened heat path and radiated to the outside to quickly radiate heat.
이외에도 몰딩층(400)이 쐐기 형태로 회로기판(200)상에 결합됨으로써 외부 충격에도 IC칩(300)을 안정적으로 보호할 수 있게된다.In addition, since the molding layer 400 is coupled to the circuit board 200 in the shape of a wedge, the IC chip 300 may be stably protected against external impact.
한편, 상술한 실시예는 본 발명의 바람직한 하나의 실시예를 설명한 것에 불과하고, 본 발명의 적용범위는 이와같은 것에 한정되는 것은 아니며, 동일사상의범주내에서 적절하게 변경한 것이다. 예를들어 본 발명의 실시예에 나타난 각 구성요소의 형상 및 구조는 변형하여 실시할 수 있는 것이다.On the other hand, the above-described embodiment is merely to describe one preferred embodiment of the present invention, the scope of the present invention is not limited to such, it is appropriately modified within the scope of the same idea. For example, the shape and structure of each component shown in the embodiment of the present invention can be modified.
상술한 바와 같이 본 발명에 무선 통신기기용 송신주파수 증폭장치에 의하면, IC칩이 회로기판의 캐비티상에 안착되는 것이어서, 메인 보드에 직접적으로 안착되는 구조를 취하고 있다.As described above, according to the present invention, a transmission frequency amplification apparatus for a wireless communication device has an IC chip that is mounted on a cavity of a circuit board, and thus is mounted directly on the main board.
따라서 작동시 발생되는 열이 직접적으로 메인 보드에 전달되어 방열되는 구조를 취함으로써 신속한 방열이 가능하고, 열 방출경로가 작은 직경을 이루지 않고 큰 폭의 캐비티로 이루어짐으로써 열 방출 병목 현상이 야기되지 않아 이를 통해서도 신속한 방열 효과를 도모할 수 있게된다.Therefore, the heat generated during operation is transferred directly to the main board to dissipate heat, which enables rapid heat dissipation, and the heat dissipation path is not made of a small diameter, but a large cavity, so that no heat dissipation bottleneck is caused. This also allows for rapid heat dissipation.
따라서 회로부품의 열화를 방지하여 제품의 신뢰성을 향상시킬 수 있는 이점이 있다.Therefore, there is an advantage that can improve the reliability of the product by preventing deterioration of the circuit components.
Claims (4)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020000085026A KR100359079B1 (en) | 2000-12-29 | 2000-12-29 | Transmission frequency an amplifier for radio communication system |
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| KR1020000085026A KR100359079B1 (en) | 2000-12-29 | 2000-12-29 | Transmission frequency an amplifier for radio communication system |
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| KR100528533B1 (en) * | 2003-07-11 | 2005-11-15 | 엘지전자 주식회사 | Mobile phone having heat emmiting part |
| DE102005034011B4 (en) | 2005-07-18 | 2009-05-20 | Infineon Technologies Ag | Semiconductor component for high frequencies above 10 GHz and method of making the same |
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