KR100358129B1 - Method for manufacturing semiconductor device using oxide doped polysilicon layer - Google Patents

Method for manufacturing semiconductor device using oxide doped polysilicon layer Download PDF

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Publication number
KR100358129B1
KR100358129B1 KR1019950003927A KR19950003927A KR100358129B1 KR 100358129 B1 KR100358129 B1 KR 100358129B1 KR 1019950003927 A KR1019950003927 A KR 1019950003927A KR 19950003927 A KR19950003927 A KR 19950003927A KR 100358129 B1 KR100358129 B1 KR 100358129B1
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South Korea
Prior art keywords
doped polysilicon
semiconductor device
polysilicon layer
oxide doped
oxide
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KR1019950003927A
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Korean (ko)
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KR960032639A (en
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엄금용
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주식회사 하이닉스반도체
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/2822—Making the insulator with substrate doping, e.g. N, Ge, C implantation, before formation of the insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition

Abstract

PURPOSE: A method for manufacturing a semiconductor device is provided to improve properties and to reduce leakage current by using an oxide doped polysilicon layer having high resistivity and high dielectric constant. CONSTITUTION: In a method for manufacturing a semiconductor device, an oxide doped polysilicon layer is used as a passivation layer, an insulating layer or a coating film. The oxide doped polysilicon layer is formed by LPCVD(Low Pressure Chemical Vapor Deposition) using mixed gases of SiH4 and N2O. Preferably, the deposition temperature of the oxide doped polysilicon layer is 600-800°C.

Description

산화물이 도핑된 폴리실리콘막을 사용한 반도체 소자 제조방법Method of manufacturing semiconductor device using oxide-doped polysilicon film

본 발명은 반도체 소자 제조 공정중 절연성 및 유전강도가 우수한 새로운 물질을 적용한 반도체 소자 및 그 제조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, in which a new material having excellent insulation and dielectric strength is applied during a semiconductor device manufacturing process.

일반적으로 소자의 집적 공정이 완료된 후, 외부에 의한 스크레치(scratch)와 습기의 침투 등으로 부터 소자의 회로내 특성을 보호하기 위하여 보호막(passivation layer)을 형성하고 있다.In general, after the device integration process is completed, a passivation layer is formed to protect the device's in-circuit characteristics from scratches and moisture penetration.

종래에는 반도체 소자 보호막으로서 질화막(Nitride, Si3N4)막을 사용하고 있는데, 질화막(Si3N4)은 아래 반응식<1>에 나타난 바와 같이 증착시 수소(H2)를 발생시키므로, 이 수소가 소자 내부로 침투하여 반도체 소자 내부의 회로특성에 영향을 미침으로써 신뢰성 저하는 물론 특성 저하와 소자에서의 누설전류(Leakage Current) 발생 원인이 되고 있다.Conventionally, a nitride film (Nitride, Si 3 N 4 ) film is used as a semiconductor device protective film. Since the nitride film (Si 3 N 4 ) generates hydrogen (H 2 ) during deposition, as shown in Scheme <1>, the hydrogen By penetrating into the device and affecting the circuit characteristics inside the semiconductor device, the reliability is deteriorated, and the degradation of the properties and the leakage current in the device are caused.

따라서, 본 발명은 높은 신뢰도를 가지고 높은 저항율과 높은 유전 강도를 갖는 새로운 물질을 적용한 반도체 소자 제조 방법을 제공함을 목적으로 한다.Accordingly, an object of the present invention is to provide a method for manufacturing a semiconductor device using a new material having high reliability, high resistivity and high dielectric strength.

상기 목적을 달성하기 위한 본 발명의 반도체소자 제조 방법은, SiH4와 N2O 가스를 사용한 저압화학기상증착법(LPCVD)으로 형성되는 산화물이 도핑된 폴리실리콘막을 소자보호막 또는 절연막 또는 코팅층으로 사용하는 것을 특징으로 한다.The semiconductor device manufacturing method of the present invention for achieving the above object, using an oxide-doped polysilicon film formed by low pressure chemical vapor deposition (LPCVD) using SiH 4 and N 2 O gas as a device protective film or insulating film or coating layer It is characterized by.

바람직하게, 본 발명에서 상기 산화물이 도핑된 폴리실리콘 증착시 N2O/SiH4를 1∼5% 비율로 하는 것을 특징으로 한다.Preferably, in the present invention, when the oxide-doped polysilicon is deposited, N 2 O / SiH 4 is characterized in that 1 to 5% ratio.

바람직하게 본 발명에서 상기 산화물이 도핑된 폴리실리콘 증착시 공정 온도를 600~800℃로 하는 것을 특징으로 한다.Preferably in the present invention is characterized in that the process temperature is 600 ~ 800 ℃ when the oxide-doped polysilicon deposition.

이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.

본 발명은 폴리실리콘 내에 산화 석출물(Oxide SiO2또는 SiOx)이 도핑된 물질(이하, "산화물이 도핑된 폴리실리콘막", Oxide Doped Polysilicon이라 칭한다)을 반도체 소자의 보호막 또는 절연막 또는 그 밖의 질화막 대체 물질로 사용하는 것에 그 특징을 갖는다. 폴리실리콘 : 산화 석출물 사이의 비율은 70 : 30으로 하는 것이 바람직하다.In the present invention, a material doped with an oxide precipitate (Oxide SiO 2 or SiOx) in polysilicon (hereinafter referred to as an “oxide-doped polysilicon film” or an oxide doped polysilicon) is substituted for a protective film or insulating film or other nitride film of a semiconductor device. It is characterized by its use as a substance. It is preferable that the ratio between polysilicon and an oxide precipitate is 70:30.

상기 산화물이 도핑된 폴리실리콘막을 형성하는 방법은, SiH4와 N2O 가스를 사용한 저압화학기상증착법(LPCVD)이고, 증착시 공정 온도는 600~800℃로 하고, N2O/SiH4를 1~5% 비율로 하면 폴리실리콘 : 산화 석출물 사이의 비율은 70 : 30으로 형성할 수 있다.The method of forming the oxide-doped polysilicon film is low pressure chemical vapor deposition (LPCVD) using SiH 4 and N 2 O gas, the process temperature during deposition is 600 ~ 800 ℃, N 2 O / SiH 4 When the ratio is 1 to 5%, the ratio between polysilicon and oxidized precipitates may be 70:30.

본 발명에 의하여 생성된 산화물이 도핑된 폴리실리콘 보호막은 비저항(ρ )이 1012~1014Ω.cm로 우수하여 높은 저항율과 높은 유전강도를 가지게 된다. 참고적으로 폴리실리콘막의 비저항은 106Ω.cm이다.The oxide-doped polysilicon protective film produced by the present invention has a high resistivity (ρ) of 10 12 to 10 14 Ω.cm, which has high resistivity and high dielectric strength. For reference, the specific resistance of the polysilicon film is 10 6 Ω.cm.

한편, 상기 설명과 같은 산화물이 도핑된 폴리실리콘막은 습식식각(HF, BOE)으로 폴리실리콘 내의 산화물을 제거시켜 그 다공성의 폴리실리콘을 커패시터의 전하저장전극으로 사용할 경우 반도체 소자의 캐패시터 용량 확보에 크게 도움을 줄수 있으며, 그 이외의 층간절연막, 버퍼(Buffer) 절연막 등으로도 이용 가능하다.On the other hand, the polysilicon film doped with the oxide as described above is a wet etching (HF, BOE) to remove the oxide in the polysilicon, when the porous polysilicon is used as a charge storage electrode of the capacitor greatly secure the capacitor capacity of the semiconductor device In addition, it can be used as an interlayer insulating film, a buffer insulating film, and the like.

또한, 반도체 제조 공정 중 웨이퍼 뒷면의 백 식각(Back Etch)시 웨이퍼 전면의 코팅층으로 이용 가능하다.In addition, it can be used as a coating layer on the front of the wafer during the back etching of the back of the wafer during the semiconductor manufacturing process.

본 발명은 신뢰성 있고, 내마모성이 적으며, 저응력을 가지는 산화물이 도핑된 폴리실리콘막을 반도체 소자의 회로특성을 보호하는 보호막 또는 절연막으로 사용하여 소자의 특성저하 방지, 누설전류 감소 등의 효과를 가져온다.The present invention uses an oxide-doped polysilicon film that is reliable, has low wear resistance, and has a low stress, as a protective film or insulating film to protect circuit characteristics of a semiconductor device, thereby reducing the characteristics of the device and reducing leakage current. .

Claims (3)

반도체 소자 제조방법에 있어서,In the semiconductor device manufacturing method, SiH4와 N2O 가스를 사용한 저압화학기상증착법(LPCVD)으로 형성되는 산화물이 도핑된 폴리실리콘막을 소자보호막 또는 절연막 또는 코팅층으로 사용하는 것을 특징으로 하는 반도체 소자 제조방법.An oxide-doped polysilicon film formed by low pressure chemical vapor deposition (LPCVD) using SiH 4 and N 2 O gas is used as a device protection film, an insulating film or a coating layer. 제1항에 있어서,The method of claim 1, 상기 산화물이 도핑된 폴리실리콘 증착시 N2O/SiH4를 1∼5% 비율로 하는 것을 특징으로 하는 반도체 소자 제조방법.The method of manufacturing a semiconductor device, characterized in that when the oxide-doped polysilicon deposition N 2 O / SiH 4 in 1 to 5% ratio. 제1항에 있어서,The method of claim 1, 상기 산화물이 도핑된 폴리실리콘 증착시 공정 온도를 600~800℃로 하는 것을 특징으로 하는 반도체 소자 제조방법.Method for manufacturing a semiconductor device characterized in that the process temperature is 600 ~ 800 ℃ during the deposition of the oxide-doped polysilicon.
KR1019950003927A 1995-02-27 1995-02-27 Method for manufacturing semiconductor device using oxide doped polysilicon layer KR100358129B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR850000777A (en) * 1983-06-08 1985-03-09 원본미기재 Porous Semiconductor Dopant Carrier and Manufacturing Method Thereof
KR880005667A (en) * 1986-10-31 1988-06-29 개리 알 · 플로테커 Semiconductor Dopant Source
US4800175A (en) * 1987-05-29 1989-01-24 Owens-Illinois Television Products Inc. Phosphorous planar dopant source for low temperature applications
KR940016491A (en) * 1992-12-23 1994-07-23 김주용 Method of depositing stacked protective film of semiconductor device
KR970707707A (en) * 1995-09-21 1997-12-01 요르크 키켈하인 Coating for forming the conductor on the surface of the electrically insulating substrate, its formation method and manufacturing method of the conductor using the coating

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR850000777A (en) * 1983-06-08 1985-03-09 원본미기재 Porous Semiconductor Dopant Carrier and Manufacturing Method Thereof
KR880005667A (en) * 1986-10-31 1988-06-29 개리 알 · 플로테커 Semiconductor Dopant Source
US4800175A (en) * 1987-05-29 1989-01-24 Owens-Illinois Television Products Inc. Phosphorous planar dopant source for low temperature applications
KR940016491A (en) * 1992-12-23 1994-07-23 김주용 Method of depositing stacked protective film of semiconductor device
KR970707707A (en) * 1995-09-21 1997-12-01 요르크 키켈하인 Coating for forming the conductor on the surface of the electrically insulating substrate, its formation method and manufacturing method of the conductor using the coating

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