KR100349354B1 - An exhauster for semiconductor device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust device of a semiconductor device, and can remove by-products deposited in an exhaust line between a process chamber and a pump. The exhaust device of the semiconductor device of the present invention for this purpose is to burn a process chamber for performing a predetermined semiconductor manufacturing process by a process gas, an exhaust pipe for exhausting the reaction by-products in the process chamber, and the reaction by-products exhausted through the exhaust pipe A reaction by-product removal unit for removing the reaction by-product, a power supply unit for supplying power to the reaction by-product removal unit, and a scubar for neutralizing and exhausting the reaction by-products which remain unburned in the reaction by-product removal unit and exhausting the reaction. The by-product removal unit, a gas inlet pipe for introducing the reaction by-product through the exhaust pipe, a reaction chamber for burning the reaction by-product introduced through the gas inlet pipe, and an uneven shape inside the reaction chamber and installed in an applied power source. A trap for dissipating heat so that the reaction byproduct is combusted; And a power feed portion for applying a power supply frequency, characterized in that the trap consists of a ceramic material installed on the outside of the insulating plates.

Description

An exhauster for semiconductor device

The present invention is connected to a process chamber in which a deposition process such as Atmosphere Pressure Chemical Vapor Deposition (APCVD) or SubAtmosphere Chemical Vapor Deposition (SACVD) is performed, and the reaction generated during the process in the process chamber. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an exhaust device of a semiconductor device for exhausting by-products, and more particularly, to an exhaust device of a semiconductor device capable of smoothly exhausting by preventing a phenomenon such as clogging of an exhaust pipe due to a reaction byproduct.

In the semiconductor manufacturing process, the wafer involves a number of processes such as thin film deposition or etching.

In the process chamber in which the above process is performed, a large amount of residual gas (unreacted gas) and undesired reaction by-products generated as a result of the reaction proceeds in a large amount. The reaction by-product including the unreacted gas is exhausted to the outside by an exhaust device formed separately on one side of the process chamber.

1 is a schematic view of an exhaust apparatus connected to a process chamber in which a deposition process such as PECVD, SACVD, etc. is performed, according to a first embodiment according to the prior art. In the following, a first embodiment according to the prior art will be described.

In the first embodiment of the conventional exhaust apparatus, mainly nitride deposition and SACVD processes are performed, and a large amount of solid reaction byproducts are generated in the process chamber during the nitride process.

The first embodiment of the conventional exhaust apparatus for exhausting such a large amount of solid reaction byproducts is installed in the exhaust pipe 120 and the exhaust pipe 120 through which the reaction byproducts in the process chamber 100 are exhausted, as shown in FIG. Throttle valve (102) for opening and closing the chamber (100), and the reaction by-products in the exhaust pipe 120 is temporarily temporarily stagnated, the first powder trap (trapder trap) for trapping the solids in the reaction by-products (104), a pump (106) for pumping the reaction by-products in the first powder trap (104), and the reaction by-products pumped from the pump (106) are temporarily temporarily stagnated and solids are contained in the reaction by-products. A second powder trap 108 for confinement and a scubar 110 for wet treating the reaction by-products exhausted from the second powder trap 108.

The process of exhausting the reaction by-products in the first embodiment of the conventional exhaust apparatus having the above configuration will be described.

When each process gas is introduced into the process chamber 100, the reaction by-products and unreacted gases (collectively referred to as reaction by-products) generated while these reaction gases react with each other are exhausted through the exhaust pipe 120.

At this time, when the nitride process is performed, the temperature of the process chamber is maintained at about 400 ° C, and when the SACVD process is performed, the temperature of the process chamber 100 is maintained at about 400 to 500 ° C. The throttle valve 102 has a temperature range of about 200 ° C. Therefore, the reaction by-products are passed through the portion where the throttle valve 102 of the exhaust pipe 120 at a high temperature is gradually lowered in temperature, thereby forming solids.

The reaction by-product flowing into the exhaust pipe 120 is first stagnated in the first powder trap 104, and solids of the reaction by-product are precipitated. Thereafter, the reaction by-products in the first powder trap 104 are exhausted to the second powder trap 108 by the pumping operation of the pump, and the solids are precipitated again. The pump 106 mainly uses a booster pump and a dry pump for pressurization.

In addition, the reaction by-products in the second powder trap 108 are exhausted to the scuba louver 110, wetted, and then exhausted to the outside.

The first and second powder traps 104 and 108 serve to temporarily hold the reaction by-products and to resend the solids after precipitation, and are used for preventing backflow and protecting the pump.

When all reaction byproducts in the process chamber are exhausted, the throttle valve 102 is turned off to cut off the connection with the exhaust pipe 120.

Fig. 2 is a schematic diagram of an exhaust apparatus installed in a process chamber for APCVD in a second embodiment according to the prior art.

The second embodiment of the conventional exhaust apparatus is connected to one side of the process chamber 200 in which the APCVD process is performed, as shown in FIG. 2, and an exhaust pipe 220 through which the reaction by-products in the process chamber 200 are exhausted, and an exhaust pipe ( An air pressure controller (APC) 202 for controlling the pressure of the 220 and a scubar 210 for wet treating the reaction by-products in the exhaust pipe 220.

Since the second embodiment of the conventional exhaust apparatus is installed in the APCVD process chamber 200, since less reaction by-products are formed, the pump and the first and second powder traps are different from the first embodiment. In the atmospheric chamber, the process chamber 200 is heated at the atmospheric pressure without gas to gasify the gas, and then a process of depositing a thin film on the wafer using the gas is performed.

That is, in the second embodiment of the conventional exhaust apparatus, the reaction by-products generated from the process chamber 200 are exhausted through the exhaust pipe 220 and the scrubber, and the pressure in the exhaust pipe 220 is controlled using the pressure regulating valve 202. do.

However, in the first and second embodiments of the conventional exhaust apparatus, when the deposition process is performed on a wafer in a process chamber having a temperature range of about 400 to 500 ° C., the temperature of a throttle valve or a pressure control valve formed in the exhaust pipe is As was higher than 200 ° C., the high temperature reaction byproduct in the exhaust pipe solidified and fixed by the relatively low atmospheric temperature as it flowed near the pump.

Therefore, the reaction by-products are fixed to the inner wall of the exhaust pipes, causing clogging of the exhaust pipes, and thus, the smooth exhaust of the reaction by-products is not achieved, resulting in shortening of the life of pumps and other devices.

In addition, in the exhaust device of the conventional semiconductor device, the first powder trap serves to primarily stagnate the remaining reaction by-products reacted in the reaction chamber and send them back to the pump. In addition, there is a problem of contaminating the reaction chamber by the backflow phenomenon during the pump trip.

In order to solve the above problems, an object of the present invention is to provide an exhaust device of a semiconductor device that can smoothly exhaust the reaction by-products in the process chamber in which the process such as deposition proceeds.

In order to achieve the above object, the exhaust device of a semiconductor device according to the present invention, a process chamber for performing a predetermined semiconductor manufacturing process by the process gas, an exhaust pipe for exhausting the reaction by-products in the process chamber, exhaust through the exhaust pipe A reaction by-product removing unit for burning and removing the reaction by-products, a power supply unit for supplying power to the reaction by-product removing unit, and a scubaber for neutralizing and evacuating the remaining reaction by-products not burned in the reaction by-product removing unit Is provided, The reaction by-product removal unit, Gas inlet pipe for introducing the reaction by-product through the exhaust pipe, Reaction chamber for burning the reaction by-product introduced through the gas inlet pipe, Uneven inside the reaction chamber A trap installed to dissipate heat to burn the reaction byproduct by an applied power source, and the trap And a direct current power source and a high-frequency power applied to the power feed portion, characterized in that the trap consists of a ceramic material installed on the outside of the insulating plates.

1 is a schematic view of an exhaust apparatus connected to a process chamber in which a deposition process such as PECVD, SACVD, etc. is performed, according to a first embodiment according to the prior art,

Fig. 2 is a schematic diagram of an exhaust apparatus installed in a process chamber for APCVD in a second embodiment according to the prior art.

3 is a schematic diagram of an exhaust apparatus connected to a process chamber in which a deposition process such as PECVD, SACVD, etc. is performed, according to a first embodiment according to the present invention;

Fig. 4 is a schematic diagram of an exhaust device connected to a process chamber for APCVD in a second embodiment according to the present invention.

5 is a view schematically showing a reaction byproduct removing unit in a first embodiment of the present invention.

Explanation of symbols on the main parts of the drawings

100, 200, 300, 400. Process chamber

102, 202, 302, 402.Valve

120, 220, 320, 420. Exhaust Pipe

104, 108, 304, 308. Powder Trap

106, 306. Pump

110, 210, 310, 410. Scuba

312, 412. Reaction byproduct removal unit

314, 414. Power supply

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

3 is a schematic diagram of an exhaust apparatus installed in a process chamber in which a deposition process such as PECVD, SACVD, etc., is performed, according to a first embodiment of the present invention, and FIG. 5 is a reaction byproduct removing unit in the first embodiment of the present invention. It is a schematic drawing.

The first embodiment of the exhaust apparatus of the present invention is connected to one side of the process chamber 300 in which the nitride and SACVD processes are performed, and the nitride and SACVD processes generate a large amount of reaction by-products during the process. do.

The first embodiment of the exhaust apparatus of the present invention for exhausting such a large amount of solid reaction byproducts is provided in the exhaust pipe 320 and the exhaust pipe 320 through which the reaction byproducts in the process chamber 300 are exhausted, as shown in FIG. 3. In addition, the throttle valve 302 for opening and closing the process chamber 300 and the reaction by-products in the exhaust pipe 320 are temporarily temporarily stagnated, and the first powder trap 304 for confining solids in the reaction by-products. ), A reaction byproduct removing unit 312 in which the reaction byproducts introduced from the first powder trap 304 are burned and removed, and a power supply unit 314 for applying power to the reaction byproduct removing unit 312, and reacting with each other. The pump 306 for pumping the reaction by-products in the by-product removal unit 312 and the second by-product trap 308 to temporarily hold the reaction by-products pumped from the pump 306 to trap solids in the reaction by-products ) And the second powder trap 308 It consists of the reaction by-products discharged from a Surgical louver (310) for processing wet.

Reaction by-product removal unit 312, the reaction chamber 500, the gas inlet pipe 502 which is a passage through which the reaction by-products installed in the reaction chamber 500 exhausted from the first powder trap, as shown in FIG. The reaction by-products sent to the chamber are temporarily stagnant, the trap 506 for burning the stagnant reaction by-products, connected to the power supply, and the power inlet 508 for applying DC and RF to the trap 506, and reacting. It consists of a ceramic insulating plate 510 provided between the chamber 500 and the trap 506, and a gas extraction pipe 504 for evacuating the combustion and remaining reaction byproducts by a pump.

It looks at the reaction by-product exhaust process according to the first embodiment of the present invention having the above configuration.

When the reaction by-products generated from the process chamber 300 where nitride, SACVD, etc. are processed are exhausted to the exhaust pipe 320, the reaction by-products are first temporarily suspended in the first powder trap 304 and solids are precipitated. After that, the reaction is evacuated to the reaction byproduct removing unit 312.

The reaction by-products exhausted to the reaction by-product removal unit 312 are stacked on top of the bulky particles by the trap 506, the small particles by the weight are stacked on the bottom. At this time, in the reaction by-product removing unit 312, as the power supply unit 314 is turned on, the reaction by-product is forcibly combusted by the DC and RF power supplied through the power inlet 508.

At this time, the reaction by-products remaining unburned in the reaction by-product removing unit 312 are pumped by the pump 306 and exhausted to the second powder trap 308, and the reaction by-products are discharged from the second powder trap 308. Secondary temporary stagnation causes solids to settle again. Thereafter, the reaction by-products in the second powder trap 308 are wet-treated in the scubar 310 and then exhausted to the outside.

In the first embodiment according to the present invention by installing the reaction by-product removing unit 312 between the first powder trap 304 and the pump 306, the reaction by-products exhausted from the first powder trap 304 to pump 306 Can be burned before being sent. Accordingly, damage to the pump 306 due to the first powder trap 304 is extended to prolong its life, and also prevents process chamber and wafer contamination due to backflow.

Fig. 4 is a schematic diagram of an exhaust device connected to a process chamber for APCVD in a second embodiment according to the present invention.

A second embodiment of the exhaust apparatus according to the present invention is connected to one side of the process chamber 400, the APCVD process proceeds as shown in Figure 4, and the exhaust pipe 420 in which the reaction by-products in the process chamber 400 is exhausted; Is installed in the exhaust pipe 420, the pressure control valve (APC: Air Pressure Controller) (402) for controlling the pressure, the reaction by-product removal unit 412 for burning and removing the reaction by-products in the exhaust pipe 430 and The power supply unit 414 for applying power to the reaction byproduct removing unit 412 and the scubar 410 for wet treating the reaction byproduct remaining without burning in the reaction byproduct removing unit 412.

The reaction byproduct removal unit 412 is the same as the reaction byproduct removal unit of the first embodiment of the present invention as shown in FIG. 5.

That is, although not shown in the drawing, the reaction chamber is composed of a gas inlet pipe connected to the reaction chamber, a gas outlet pipe, a trap, a power inlet unit, and an insulating plate.

In the second embodiment of the exhaust apparatus according to the present invention, first, during the SACVD process in the process chamber, the reaction by-products generated are exhausted to the exhaust pipe 420. Thereafter, the reaction by-products are exhausted to the reaction by-products removing unit 412, and as the power supply unit 414 is turned on, the reaction by-products are supplied by the DC and RF power supplied through the power inlet connected to the power supply unit 414. This is forcibly combusted.

At this time, the reaction by-products that remain unburned in the reaction by-product removing unit are wet-treated in the scubar 110 and then exhausted to the outside.

As described above, in the first and second embodiments of the present invention, the reaction by-products generated during the process are burned and removed, whereby the reaction by-products can be prevented from sticking to the exhaust pipe or the pump.

In addition, in the first and second embodiments of the present invention, the reaction by-products are burned, and thus, a backflow phenomenon occurring when an abnormality occurs in the exhaust pipe or the pump can be prevented, thereby reducing process chamber contamination and wafer contamination. This has the advantage of extending the life of the pump.

Claims (5)

In the exhaust device of a semiconductor device, A process chamber for performing a predetermined semiconductor manufacturing process by a process gas, an exhaust pipe for exhausting reaction by-products in the process chamber, a reaction by-product removal unit for burning and removing the reaction by-products exhausted through the exhaust pipe, and the reaction A power supply unit for supplying power to the by-product removing unit, and a scubar for neutralizing the reaction by-products remaining unburned in the reaction by-product removing unit to exhaust the reaction by-products, the reaction by-product removing unit, the reaction by-products through the exhaust pipe A gas inlet pipe for introducing the gas, a reaction chamber for burning the reaction byproducts introduced through the gas inlet pipe, and installed in the inside of the reaction chamber in an uneven shape and dissipating heat so that the reaction byproducts are burned by an applied power source. A trap, a power inlet for applying a direct current power source and a high frequency power source to the trap; An exhaust system for a semiconductor device, characterized in that the insulating plates consisting of a ceramic material installed on the outside. delete The method of claim 1, A first powder trap between the process chamber and the reaction byproduct removing unit for removing the reaction byproduct; A pump for pumping the reaction byproduct between the reaction byproduct removing unit and the scuba; And a second power dust trap further configured to remove the reaction byproduct between the pump and the scubar. delete delete