KR100324622B1 - Method for producing spherical powder using perturbation phenomena on the dissimilar liquid interface - Google Patents
Method for producing spherical powder using perturbation phenomena on the dissimilar liquid interface Download PDFInfo
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- KR100324622B1 KR100324622B1 KR1019990027290A KR19990027290A KR100324622B1 KR 100324622 B1 KR100324622 B1 KR 100324622B1 KR 1019990027290 A KR1019990027290 A KR 1019990027290A KR 19990027290 A KR19990027290 A KR 19990027290A KR 100324622 B1 KR100324622 B1 KR 100324622B1
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- 239000000843 powder Substances 0.000 title claims abstract description 43
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000007788 liquid Substances 0.000 title claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 34
- 239000000956 alloy Substances 0.000 claims abstract description 34
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 18
- 239000011261 inert gas Substances 0.000 claims abstract description 13
- 239000007791 liquid phase Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 17
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910020836 Sn-Ag Inorganic materials 0.000 claims description 6
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 6
- 229910020988 Sn—Ag Inorganic materials 0.000 claims description 6
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 6
- 229910020220 Pb—Sn Inorganic materials 0.000 claims description 5
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 229910015363 Au—Sn Inorganic materials 0.000 claims description 3
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 3
- 229910020935 Sn-Sb Inorganic materials 0.000 claims description 3
- 229910020994 Sn-Zn Inorganic materials 0.000 claims description 3
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 3
- 229910018956 Sn—In Inorganic materials 0.000 claims description 3
- 229910008757 Sn—Sb Inorganic materials 0.000 claims description 3
- 229910009069 Sn—Zn Inorganic materials 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- YFWIACABGHWPLP-UHFFFAOYSA-N 2-(2-hydroxyethoxy)ethanol;propane-1,2,3-triol Chemical compound OCC(O)CO.OCCOCCO YFWIACABGHWPLP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims 1
- 229910000743 fusible alloy Inorganic materials 0.000 claims 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims 1
- -1 polydimethylsiloxane Polymers 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000002245 particle Substances 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 4
- 229910000679 solder Inorganic materials 0.000 abstract description 4
- 239000007921 spray Substances 0.000 abstract description 3
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 238000009827 uniform distribution Methods 0.000 description 3
- 238000005345 coagulation Methods 0.000 description 2
- 230000015271 coagulation Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 229920006336 epoxy molding compound Polymers 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/06—Metallic powder characterised by the shape of the particles
- B22F1/065—Spherical particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/02—Nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/10—Inert gases
- B22F2201/11—Argon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
본 발명은 이종액체 계면의 섭동원리를 이용한 구형분말 제조방법에 관한 것으로, 저융점 합금을 용융하여 용탕을 형성하고, 상기 용탕에 불활성 가스를 주입하여 상기 용융합금을 노즐을 통하여 줄기형으로 분사시키고, 상기 줄기형으로 분출되는 용융합금을 유기 액상에 주입시키는 것으로 이루어지는 이종액체 계면의 섭동원리를 이용한 구형분말 제조방법을 제공한다. 본 발명에 의하여 제조된 합금분말은 조직이 미세하고, 매우 균일한 분포의 입도를 나타내며, 표면이 매끄럽고, 진구 형태를 갖고 있다. 또한 본 발명에 의한 분말 제조공정은 매우 단순하여 제조장비의 구성이 쉬워 다른 제조방법 보다 제조비용을 훨씬 절감할 수 있다. 따라서 본 발명에 의해 제조된 합금 분말들을 반도체칩 또는 인쇄회로기판의 표면실장형 회로구성을 위한 솔더 부품으로 사용할 경우 전자기기의 I/O핀의 수를 증가시키고 핀의 간격을 보다 작게 할 수 있어 반도체 또는 시스템용 보드의 고집적 BGA 패키징 작업을 보다 용이하게 할 수 있다.The present invention relates to a spherical powder manufacturing method using the perturbation principle of a heterogeneous liquid interface, to form a molten metal by melting a low-melting point alloy, injecting an inert gas into the molten alloy to spray the molten alloy in the form of a stem through a nozzle It provides a spherical powder production method using the perturbation principle of the hetero-liquid interface consisting of injecting the molten alloy ejected in the stem form into an organic liquid phase. The alloy powder produced by the present invention has a fine structure, exhibits a very uniform particle size, a smooth surface, and has a spherical shape. In addition, the powder manufacturing process according to the present invention is very simple, the configuration of the manufacturing equipment is easy to reduce the manufacturing cost much more than other manufacturing methods. Therefore, when using the alloy powder prepared by the present invention as a solder component for the surface-mount circuit configuration of a semiconductor chip or printed circuit board, the number of I / O pins of the electronic device can be increased and the spacing of the pins can be made smaller. Highly integrated BGA packaging of semiconductor or system boards can be made easier.
Description
본 발명은 이종액체 계면의 섭동원리를 이용한 구형분말 제조방법에 관한 것으로, 특히 전자부품의 소형화, 고속화, 고집적화 추세에 따라, 최근 주목받고 있는 반도체 칩과 패키지의 크기가 거의 차이가 없을 정도로 얇고 작은 CSP(chip scale package)용 구형 솔더 볼 제품을 제조하는 방법에 관한 것이다.The present invention relates to a spherical powder manufacturing method using the perturbation principle of the heterogeneous liquid interface, in particular, according to the trend of miniaturization, high speed, high integration of electronic components, the size and size of semiconductor chips and packages that are recently attracting attention are so thin and small A method of manufacturing a spherical solder ball product for a chip scale package (CSP).
종래에는 완성된 칩을 리드프레임에 접착시키고 칩(다이)의 회로단자와 리드(lead) 사이를 Au선(gold wire)을 이용해 연결하고, 연결된 다이와 회로를 외부환경으로부터 보호하기 위해서 에폭시 몰딩 컴파운드(EMC)로 몰딩하고, 인쇄회로기판((printed circuit board: PCB)에 실장시 납땜(솔더링)이 용이하도록 주석(Sn) 또는 납(Pb)로 표면처리된 리드를 사용하고 있다. 그러나 최근 전자부품 영역에서 반도체의 패키징 기술은 전자기기의 경박단소화 추세에 따라 표면실장기술(SMT)로 대체되고 있다. 이러한 표면실장기술은 I/O핀의 수를 증가시킬 수 있고, 고집적화를 위한 다핀화 경향과 경량화 수요에 대응할 수 있기 때문에 패키징 기술의 주류를 이루고 있다. 이는 패키지 밑면에 수직형으로 단자를 배열하는 BGA(ball grid array)기술이 개발되면서 가능해졌다.Conventionally, the finished chip is bonded to the lead frame, and the circuit terminal of the chip (die) and the lead are connected by Au wire (gold wire), and the epoxy molding compound ( Leads are molded using EMC and surface-treated with tin (Sn) or lead (Pb) to facilitate soldering (soldering) when mounted on printed circuit boards (PCBs). In the area, semiconductor packaging technology is being replaced by surface mount technology (SMT) in accordance with the trend of thin and short electronic devices, which can increase the number of I / O pins and increase the number of pins for high integration. Packaging technology has become mainstream because it can meet the demand for light weight and light weight, which is made possible by the development of ball grid array (BGA) technology, which arranges terminals vertically on the bottom of the package.
BGA기술은 기존의 QFP(Quad Flat Package)와 비교해 동일단자 수 대비 패키지의 크기가 수십% 작고 전기적 열적 수행능력이 우수하며 비용면에서도 유리한 것으로 알려져 있다. 특히 마이크로 BGA는 기존의 리드프레임 대신 박막형의회로필름(circuit film)위에 칩이 올려져있고 그 밑에 미세구경의 저융점 합금이 접착되어 있는 간단한 형태를 특징으로 하고 있다. 따라서 이러한 패키지 구조가 일반화될 경우 기존 반도체 조립공정에서 널리 이용되고 있는 Au선 본딩, 몰딩 그리고 리드형성을 위한 트리밍 및 포밍공정이 더 이상 필요하지 않게된다. 이러한 장점으로 인해 표면실장형 기술의 하나인 BGA용 저융점 미세 구형분말의 제조방법이 개발되고 있다. 그러나 BGA 패키지에서 요구하는 미세 구형 분말은 그 진구도가 높아야하고, 크기가 매우 균일하여야 하며 산소농도가 낮아야 한다.BGA technology is known to be advantageous in terms of cost and tens percent smaller package size, excellent electrical and thermal performance, compared to conventional flat flat package (QFP). In particular, the micro BGA is characterized by a simple form in which a chip is mounted on a thin circuit circuit film instead of a conventional lead frame, and a micro-caliber low melting point alloy is attached thereto. Therefore, when this package structure is generalized, the trimming and forming process for Au line bonding, molding, and lead forming, which are widely used in the existing semiconductor assembly process, is no longer needed. Due to these advantages, a method for producing low melting point fine spherical powder for BGA, which is one of surface mount technologies, has been developed. However, the fine spherical powder required in the BGA package should have high sphericity, very uniform size and low oxygen concentration.
균일한 분포의 분말을 제조하는 방법으로서 용융금속을 형성하고 이를 작은 구멍(orifice 또는 노즐)으로부터 분사시키기 전에 용탕에 대하여 진동을 주거나 분출되는 용융금속에 대하여 전압을 인가하여 형성되는 액적(droplet)들을 대전(charge)시켜 분사하는 방법이 있다.(Jung-Hoon Chun and Christian H.Passow; Production of Charged Uniformly Sized Metal Droplets, USP 5,266,098A) 그러나 이 방법은 균일한 분포의 액적을 형성하기에 유리하지만 대전 판(charging plate)을 설치하여야 하고, 이에 대하여 전압을 인가하는 별도의 장치가 필요하다. 또한 분출되어 비산(flighting)되는 과정에서 응고가 부분적으로 일어날 수 있고, 견고한 고상의 substrate등에 부딪히기 때문에 저융점 합금과 같은 연한 재료의 경우 substrate와 충돌하는 과정에서 변형되어 진구의 분말을 변형없이 제조하기 곤란한 문제점을 갖는다.A method for producing a powder of uniform distribution, wherein droplets formed by vibrating molten metal or applying a voltage to the molten metal that is ejected before forming molten metal and spraying it from a small hole (orifice or nozzle) There is a method of charging and discharging (Jung-Hoon Chun and Christian H. Passow; Production of Charged Uniformly Sized Metal Droplets, USP 5,266,098A). However, this method is advantageous for forming a uniform distribution of droplets. Charging plates should be installed, and a separate device for applying voltage is required. In addition, coagulation may occur in the process of sputtering and scattering, and because it hits a solid solid substrate, the soft material such as a low melting point alloy is deformed in the process of colliding with the substrate to produce the powder of the spherical body without deformation. It has a difficult problem.
상기의 문제점을 해결하기 위하여 본 발명은 대전 판 등을 설치할 필요가 없고, 합금 분말들은 매우 균일한 분포의 입도를 나타낼 뿐만 아니라 공정이 단순하여 제조 비용이 적게 드는 표면실장형 패키징용 구형분말 제조방법을 제공하는데 그 목적을 두고 있다.In order to solve the above problems, the present invention does not need to install a charging plate or the like, and the alloy powders exhibit a very uniform distribution of particle size, and a simple process for manufacturing spherical powder for surface-mount packaging, which is simple in manufacturing cost. The purpose is to provide.
도 1은 본 발명에 의한 구형분말의 제조 과정을 개략적으로 보인 모식도이다.1 is a schematic view showing a manufacturing process of a spherical powder according to the present invention.
*** 도면의 주요부분에 대한 부호의 설명 ****** Explanation of symbols for main parts of drawing ***
1: 용탕을 형성하는 용기 2: 노즐1: container for forming molten metal 2: nozzle
3: 가스 주입구 4: 줄기형으로 분사되는 용융금속3: gas inlet hole 4: molten metal sprayed into stem
5: 액상 유기물질 7: 섭동현상5: Liquid organic substance 7: Perturbation
8: 액적 9: 응고된 액적8: Droplet 9: Solidified Droplet
10: 발열체 11: 발열체10: heating element 11: heating element
12: 응고된 분말의 수집부위12: collecting area of the solidified powder
본 발명은 상기의 목적을 이루기 위하여 500℃이하의 저융점 합금을 용융하여 용탕을 형성하고, 상기 용탕에 불활성 가스를 주입하여 상기 용융합금을 노즐을 통하여 줄기형(linear-shaped)으로 분사시키고, 상기 줄기형으로 분출되는 용융합금을 유기 액상(organic liquid)에 주입시키는 것으로 이루어지는 이종액체 계면의 섭동(perturbation)원리를 이용한 구형분말 제조방법을 제공한다.In order to achieve the above object, the present invention forms a molten alloy by melting a low melting point alloy below 500 ° C, injects an inert gas into the molten alloy, and sprays the molten alloy through a nozzle into a linear shape. Provided is a spherical powder production method using a perturbation principle of a heterogeneous liquid interface comprising injecting the molten alloy ejected into the stem form into an organic liquid.
용융합금을 노즐을 통하여 줄기형으로 분사시키고, 분사된 용융합금을 액상의 유기물질과 접촉시키면 계면이 불안정해지는 섭동현상이 일어난다. 섭동현상이란 원통형, 막대기형, 줄기형 또는 바늘모양의 액상이 길이 방향을 따라서 계면이 불안정해지면서 작은 액적(droplet) 행렬로 분리되는 현상으로, 줄기형 액상의 길이(L) 및 직경(R)의 비에 의해서 섭동의 임계파장(λ)이 결정된다. 유기 액상 내에서 분리된 액적은 표면장력에 의해서 계면에너지를 최소화하기 위해 구형으로 응고되고, 응고 중에 발생되는 열은 액상의 유기물질 속으로 전달되기 때문에 응고속도가 매우 빠르고 그 조직(microstructure)이 미세해질 수 있다.When the molten alloy is sprayed in the form of a stem through a nozzle and the molten alloy is in contact with a liquid organic material, a perturbation phenomenon occurs in which an interface becomes unstable. Perturbation is a phenomenon in which a cylindrical, rod, stem, or needle-like liquid is separated into small droplet matrices as the interface becomes unstable along the length direction. The length (L) and diameter (R) of the stem liquid The critical wavelength λ of perturbation is determined by the ratio of. The droplets separated in the organic liquid are solidified in a spherical shape to minimize interfacial energy by surface tension, and the heat generated during solidification is transferred to the organic material in the liquid, so the solidification speed is very fast and the microstructure is fine. Can be done.
도 1은 본 발명에 의한 구형분말의 제조 과정을 개략적으로 보인 것이다. 발열체(10)에 의해 500℃이하의 저융점 합금을 용융시켜 용탕을 형성하고, 상기 용융합금에 대하여 불활성 가스(inert gas)를 주입시켜 용융합금이 용탕 밑에 제공된작은 구멍의 노즐(2)을 통하여 줄기형으로 분사시킨다. 상기 줄기형 용융합금(4)을 액상 유기물질(5)과 접촉시켜 줄기형 용융합금 표면에 섭동현상(7)을 일으키게 함으로써 액적(8) 행렬을 형성시키고, 형성된 액적들은 표면장력에 의해서 구형으로 응고됨으로써 구형분말(9)로 제조된다.1 schematically shows a manufacturing process of a spherical powder according to the present invention. A low melting point alloy of 500 ° C. or less is melted by the heating element 10 to form a molten metal, and an inert gas is injected into the molten alloy through a small hole nozzle 2 provided with a molten alloy under the molten alloy. Spray into a stem. The stem-shaped molten alloy 4 is brought into contact with the liquid organic material 5 to cause a perturbation phenomenon 7 on the surface of the stem-shaped molten alloy to form a matrix of droplets 8, and the formed droplets are spherical by surface tension. By solidification, it is made of spherical powder (9).
상기 저융점 합금으로는 Pb-Sn, Pb-Sn-Ag, Pb-Sn-Bi, Au-Sn, Sn-Sb, Sn-Cu, Sn-Zn, Sn-Ag, In-Ag, Sn-Bi, Sn-In 등을 사용한다. 용탕의 밑면에 형성된 노즐의 직경은 0.1에서 0.5mm 의 크기가 적당하며, 노즐과 유기액상 표면과의 거리는 10 ~ 300cm, 바람직하게는 10 ~ 100cm의 범위가 적당하다. 불활성 가스로는 Ar, 질소 등을 사용하고, 유기 액상으로는 에탄올(ethanol), 글리콜(glycol), 디에틸렌글리콜 글리세롤(glycerol), 폴리디메틸실록산(polydemethylsiloxane) 등을 사용한다.As the low melting point alloy, Pb-Sn, Pb-Sn-Ag, Pb-Sn-Bi, Au-Sn, Sn-Sb, Sn-Cu, Sn-Zn, Sn-Ag, In-Ag, Sn-Bi, Sn-In or the like is used. The diameter of the nozzle formed on the bottom of the molten metal is appropriately in the size of 0.1 to 0.5mm, the distance between the nozzle and the organic liquid surface is 10 ~ 300cm, preferably in the range of 10 ~ 100cm. Ar, nitrogen, and the like are used as the inert gas, and ethanol, glycol, diethylene glycol glycerol, polydimethylmethyl, and the like are used as the organic liquid.
상기 불활성 가스의 압력은 1∼10kg/cm2범위로 유지하여 분출되는 용융금속이 유기액상과 접촉되기 전에 응고되지 않도록 그 분출속도를 유지시킨다.The pressure of the inert gas is maintained in the range of 1 to 10 kg / cm 2 to maintain the ejection rate so that the molten metal to be ejected does not solidify before contact with the organic liquid phase.
용융금속에 대한 산소용해를 억제시키기 위하여 용탕과 유기액상을 진공 챔버속에 설치하여 공기를 제거한 후 불활성 가스를 주입시킨다. 용탕의 온도는 합금의 융점 보다 50℃이상 유지하며, 응고되는 용융금속의 표면조도를 향상시키기 위하여 가열 장치(11)를 설치하고 유기액상의 온도를 용융금속의 융점보다 10℃에서 180℃ 낮게 유지한다.In order to suppress oxygen dissolution of molten metal, a molten metal and an organic liquid phase are installed in a vacuum chamber to remove air, and then inert gas is injected. The temperature of the molten metal is maintained at 50 ° C. or higher than the melting point of the alloy, and a heating device 11 is installed to improve the surface roughness of the molten metal to be solidified, and the temperature of the organic liquid phase is maintained at 10 ° C. to 180 ° C. below the melting point of the molten metal. do.
본 발명에 의하면 진구도가 높고(구형분말의 장축과 단축의 비가 같을수록 진구도가 높다.), 응고된 분말의 직경이 최대 0.6mm이하로서 SMT 패키징에 적합한 BGA 패키징용 미세 구형 분말을 제조할 수 있다. 또한, 본 발명에 의하면 액상 유기물질 속에서 응고를 진행시키기 때문에 응고조직이 미세하며 그 표면이 매끄럽고, 노즐의 직경을 조절하여 100 ~ 600㎛ 직경의 구형분말이 제조된다.According to the present invention, the spherical degree is high (the higher the ratio of the long axis and the short axis of the spherical powder is, the higher the spherical degree is). Can be. In addition, according to the present invention, since the solidification proceeds in the liquid organic material, the coagulation structure is fine, the surface thereof is smooth, and the spherical powder having a diameter of 100 to 600 µm is manufactured by adjusting the diameter of the nozzle.
특히, 본 발명은 용탕으로부터 직접 진구의 분말을 제조하기 때문에 그 공정이 매우 단순하여 제조장비의 구성이 쉽고, 응고속도가 빨라 액적의 응고 도중의 산화반응이나 응고분말내의 산소농도를 최소화시킬 수 있다. 또한 줄기형으로 분출되는 용융금속의 섭동 파장을 조절하여 분말의 크기를 용이하게 제어할 수 있기때문에, 선재 또는 판재로부터 일정 부피(크기)로 절단하여 이를 개별적으로 용융시키고 그로부터 응고시켜 분말을 제조하는 방법 보다 제조 비용을 절감할 수 있다.In particular, since the present invention produces the powder of the Jingu directly from the molten metal, the process is very simple, so the construction of the manufacturing equipment is easy, and the solidification rate is fast, so that the oxidation reaction during the solidification of the droplets and the oxygen concentration in the solidification powder can be minimized. . In addition, since the size of the powder can be easily controlled by controlling the perturbation wavelength of the molten metal ejected into the stem shape, the powder is cut into a predetermined volume (size) from the wire or the plate and melted separately and solidified therefrom to prepare the powder. The manufacturing cost can be saved more than the method.
이렇게 제조된 합금 분말들은 매우 균일한 분포의 입도를 나타내며, 대표적으로 Pb-Sn 공정합금은 BGA 패키징용 솔더제품으로 사용될 수 있다.The alloy powders thus prepared exhibit a very uniform particle size, and typically, Pb-Sn eutectic alloys can be used as solder products for BGA packaging.
이상과 같이 본 발명의 이종 액상계면의 섭동원리를 이용한 구형 분말 제조방법을 보다 구체적으로 설명하면 다음과 같다.The spherical powder manufacturing method using the perturbation principle of the heterogeneous liquid interface of the present invention as described above in more detail as follows.
실시예 1Example 1
도 1에서와 같이 밑면에 0.1mm의 직경을 갖는 노즐이 제공된 용기 속에 목적 조성으로 Pb-63%Sn 원료를 장입하고 불활성 가스로서 알곤(Ar)을 흘려주어 용기내의 공기를 밀어내고 용기내부가 Ar분위기로 유지되게 하였다. Ar을 5분간 흘려준 후 용기의 내부 온도를 Pb-Sn원료의 융점(183℃) 보다 100℃ 높게 가열 하였다. 그 후 8kg/cm2의 압력으로 Ar가스를 용탕의 상부에 제공된 5mm 직경의 튜브를 통하여 주입하였다. 이때 용기밑면의 노즐로부터 용융금속이 줄기형으로 분출되었다. 분출되는 용융금속은 글리콜과 같은 유기 액체속으로 진입하게 하였다. 이때 분출되는 용융금속이유기 액체속에 진입되기 전에 응고되지 않도록 분출 속도를 초당 10m이상이 되게 하였으며 유기액상과 노즐사이의 거리를 20cm 이내가 되게 위치시켰다.In the container provided with a nozzle having a diameter of 0.1mm at the bottom as shown in Fig. 1, Pb-63% Sn raw material is charged with the desired composition, and argon (Ar) is flowed as an inert gas to push out the air in the container, It was kept in the atmosphere. After flowing Ar for 5 minutes, the inside temperature of the container was heated to 100 degreeC higher than melting | fusing point (183 degreeC) of Pb-Sn raw material. Ar gas was then injected through a 5 mm diameter tube provided on top of the melt at a pressure of 8 kg / cm 2 . At this time, molten metal was ejected in the shape of a stem from the nozzle at the bottom of the container. The ejected molten metal was allowed to enter an organic liquid such as glycol. At this time, the ejection speed was set to 10 m / sec or more and the distance between the organic liquid phase and the nozzle was placed within 20 cm so that the molten metal to be ejected did not solidify before entering the organic liquid.
줄기형으로 분출되는 용융금속은 상온의 글리콜 속에서 그 표면으로부터 섭동현상이 일어나 작은 액적행렬로 분리되면서 응고되었다. 응고된 금속분말은 그 표면의 거칠기가 서브 미크론 수준으로 매우 매끄럽고 장축 대 단축의 비가 99.9%이상으로 진구에 가까운 형상을 나타내었다. 또한 그 미세조직은 2 ~ 5㎛으로서 매우 미세한 공정조직으로 이루어졌다. 응고된 분말의 평균입도는 200±10㎛으로 매우 균일하였다.The molten metal ejected in the form of a stem solidified by perturbation from the surface of the glycol at room temperature and separation into small droplet matrices. The solidified metal powder had a surface roughness of submicron level that was very smooth and the long axis-to-uniaxial ratio was 99.9% or more. In addition, the microstructure is made of very fine process structure as 2 ~ 5㎛. The average particle size of the coagulated powder was very uniform at 200 ± 10 μm.
실시예 2Example 2
본 발명의 도 1에서와 같이 밑면에 0.5mm의 직경을 갖는 노즐이 제공된 용기 속에 목적 조성으로서 Pb-63%Sn 원료를 장입하고 불활성 가스로서 알곤(Ar)을 흘려주어 공기를 밀어내고 용기내부가 Ar분위기로 유지되게 하였다. Ar을 5분간 흘려준 후 용기의 내부 온도를 Pb-Sn원료의 융점(183℃) 보다 50℃ 높게 가열 하였다. 그 후 6kg/cm2의 압력으로 Ar가스를 용탕의 상부에 제공된 5mm 직경의 튜브를 통하여 주입하였다. 이 때 용기밑면의 노즐로부터 용융금속이 줄기형으로 분출되었다. 분출되는 용융금속은 글리콜과 같은 유기 액상속으로 진입되게 하였다. 이때 분출되는 용융금속이 유기액상 속에 진입되기 전에 응고되지 않도록 분출 속도를 초당 10m이상이 되게 하였으며 유기액상과 노즐사이의 거리를 30cm 이내가 되게 위치시켰다.In the container provided with a nozzle having a diameter of 0.5mm at the bottom as shown in Figure 1 of the present invention, Pb-63% Sn raw material is charged as a target composition and argon (Ar) is flowed in as an inert gas to push out air and It was kept in an Ar atmosphere. After flowing Ar for 5 minutes, the inside temperature of the container was heated to 50 degreeC higher than melting | fusing point (183 degreeC) of Pb-Sn raw material. Ar gas was then injected through a 5 mm diameter tube provided on top of the melt at a pressure of 6 kg / cm 2 . At this time, molten metal was ejected in the shape of a stem from the nozzle at the bottom of the container. The ejected molten metal was allowed to enter the organic liquid phase such as glycol. At this time, the injection speed was set to 10m or more per second so that the molten metal to be ejected does not solidify before entering the organic liquid phase, and the distance between the organic liquid phase and the nozzle was positioned within 30 cm.
줄기형으로 분출되는 용융금속은 100℃로 유지시킨 유기 액체 속에서 그 표면으로부터 섭동현상이 일어나 작은 액적행렬로 분리되면서 응고되었다. 응고된 금속분말은 그 표면의 거칠기가 수 미크론 수준으로 매우 매끄럽고 장축 대 단축의 비가 99.9%이상으로 진구에 가까운 형상을 나타내었다. 응고된 분말의 평균입도는 600±20㎛ 이었다.The molten metal ejected in the form of stems was solidified by separating into small droplet matrices due to perturbation from the surface of the organic liquid maintained at 100 ° C. The coagulated metal powder was very smooth with the surface roughness of several microns and the ratio of long axis to short axis was more than 99.9%. The average particle size of the coagulated powder was 600 ± 20 μm.
실시예 3Example 3
Pb-Sn-Ag, Pb-Sn-Bi, Au-Sn, Sn-Sb, Sn-Cu, Sn-Zn, Sn-Ag, In-Ag, Sn-Bi, Sn-In 등의 합금에 대하여 용탕의 온도를 400℃로 유지하고, 0.1에서 0.5mm 직경의 노즐을 통해 6kg/cm2의 압력으로 Ar가스를 주입함으로써 용융금속을 줄기형으로 분사시켰다. 분사된 줄기형 용융금속은 초당 10m의 속도로 유기액상으로서 글리세롤 속에 진입시켰다. 실시 예 1 또는 2에서와 같이 줄기형의 용융금속은 유기액상으로 글리세롤과 접촉되면서 그 표면에서 섭동현상을 일으켰고 99% 이상의 진구 형태로 응고되었다. 그 평균크기는 0.1mm 직경의 노즐을 사용했을 때는 200㎛, 0.5mm 직경의 노즐을 사용했을 때는 600㎛을 나타냈다.For alloys such as Pb-Sn-Ag, Pb-Sn-Bi, Au-Sn, Sn-Sb, Sn-Cu, Sn-Zn, Sn-Ag, In-Ag, Sn-Bi, Sn-In, etc. The molten metal was sprayed in the shape of a stem by maintaining the temperature at 400 ° C. and injecting Ar gas at a pressure of 6 kg / cm 2 through a nozzle of 0.1 to 0.5 mm diameter. The sprayed stem molten metal was introduced into glycerol as an organic liquid at a speed of 10 m per second. As in Example 1 or 2, the stem-type molten metal was in contact with glycerol in the organic liquid phase, causing perturbation on its surface and solidifying in a spherical shape of 99% or more. The average size was 200 μm when using a nozzle of 0.1 mm diameter and 600 μm when using a nozzle of 0.5 mm diameter.
본 발명에 의하여 제조된 합금분말은 조직이 미세하고, 매우 균일한 분포의 입도를 나타내며, 표면이 매끄럽고, 진구 형태를 갖고 있다. 또한 본 발명에 의한 분말 제조공정은 매우 단순하여 제조장비의 구성이 쉬워 다른 제조방법 보다 제조비용을 훨씬 절감할 수 있다. 따라서 본 발명에 의해 제조된 합금 분말들을 반도체칩 또는 인쇄회로기판의 표면실장형 회로구성을 위한 솔더 부품으로 사용할 경우 전자기기의 I/O핀의 수를 증가시키고 핀의 간격을 보다 작게 할 수 있어 반도체 또는 시스템용 보드의 고집적 BGA 패키징 작업을 보다 용이하게 할 수 있다.The alloy powder produced by the present invention has a fine structure, exhibits a very uniform particle size, a smooth surface, and has a spherical shape. In addition, the powder manufacturing process according to the present invention is very simple, the configuration of the manufacturing equipment is easy to reduce the manufacturing cost much more than other manufacturing methods. Therefore, when using the alloy powder prepared by the present invention as a solder component for the surface-mount circuit configuration of a semiconductor chip or printed circuit board, the number of I / O pins of the electronic device can be increased and the spacing of the pins can be made smaller. Highly integrated BGA packaging of semiconductor or system boards can be made easier.
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|---|---|---|---|---|
| KR100400660B1 (en) * | 2001-03-29 | 2003-10-08 | 이부락 | equipment and method adult form welding ball of oil high pressure and high temperature |
| CN108311707B (en) * | 2018-03-07 | 2023-11-03 | 中国科学院光电研究院 | Preparation device and preparation method of superfine powder |
| CN109434123B (en) * | 2018-10-26 | 2022-03-22 | 锡矿山闪星锑业有限责任公司 | Device and method for preparing antimony beads |
-
1999
- 1999-07-07 KR KR1019990027290A patent/KR100324622B1/en not_active IP Right Cessation
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| Publication number | Publication date |
|---|---|
| KR20010009108A (en) | 2001-02-05 |
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