KR100318092B1 - Naphtoquinone-diazide Ester Photosensitive Material for PS Plate Use - Google Patents

Naphtoquinone-diazide Ester Photosensitive Material for PS Plate Use Download PDF

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KR100318092B1
KR100318092B1 KR1019990032056A KR19990032056A KR100318092B1 KR 100318092 B1 KR100318092 B1 KR 100318092B1 KR 1019990032056 A KR1019990032056 A KR 1019990032056A KR 19990032056 A KR19990032056 A KR 19990032056A KR 100318092 B1 KR100318092 B1 KR 100318092B1
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nqd
diazo
photosensitive material
naphthoquinone
methoxybenzophenone
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KR20010016868A (en
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김선호
안종일
명영찬
구양서
유장근
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대한민국(관리청:특허청장, 승계청:산업자원부 기술표준원장)
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C1/00Photosensitive materials
    • G03C1/72Photosensitive compositions not covered by the groups G03C1/005 - G03C1/705
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18Manufacture of films or sheets

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Abstract

본 발명은 PS판용 나프토퀴논-디아지드(NQD)계 감광재료에 관한 것으로, 2-디아조-나프토퀴논-5-설포닐 클로라이드와 메톡시 그룹이 도입된 하이드록시벤조페논계 유도체를 축중합하여 얻어진 것을 특징으로 하며, 본 발명에 의한 감광재료는 용해도와 감도 및 해상도가 우수한 효과를 나타내고, 생산단가가 저렴하다.The present invention relates to a naphthoquinone-diazide (NQD) -based photosensitive material for PS plates, wherein dehydration of hydroxybenzophenone derivatives in which 2-diazo-naphthoquinone-5-sulfonyl chloride and methoxy group are introduced is carried out. The photosensitive material according to the present invention exhibits excellent solubility, sensitivity, and resolution, and is low in production cost.

Description

PS판용 나프토퀴논-디아지드계 에스테르 감광재료 {Naphtoquinone-diazide Ester Photosensitive Material for PS Plate Use}Naphtoquinone-diazide ester photosensitive material for PS plate

본 발명은 PS판용 나프토퀴논-디아지드(NQD)계 감광재료에 관한 것으로, 보다 상세하게로는 포지티브(Positive)형 PS(Pre-sensitized)판의 감광재료로 사용되는 감광성 수지인 나프토퀴논 디아지드(NQD)의 유도체인 나프토퀴논-(1,2)-디아지드-5-설폰산 에스테르에 관한 것이다.The present invention relates to a naphthoquinone-diazide (NQD) photosensitive material for PS plates, and more particularly, to a naphthoquinone which is a photosensitive resin used as a photosensitive material of a positive PS (Pre-sensitized) plate. A naphthoquinone- (1,2) -diazide-5-sulfonic acid ester that is a derivative of diazide (NQD).

감광성 고분자의 가장 중요한 기능은 화상형성(image-making) 기능과 광경화 피막형성(thin film photo-curing) 기능이며, 이를 이용하여 정밀산업용 전자기기 및 반도체 소자의 회로제작을 위한 광미세가공 및 미세화상 형성용 포토레지스트, 인쇄제판용 감광재료(PS판, 인쇄수지판), 감광성 인쇄잉크, 감광성 접착제 등에 다양하게 이용되고 있다.The most important functions of the photosensitive polymer are the image-making function and the thin film photo-curing function. It is used in various ways such as an image forming photoresist, a photosensitive material for printing plate (PS plate, a printing resin plate), a photosensitive printing ink, and a photosensitive adhesive.

감광성 수지에 요구되는 일반적인 성질로는 고감도, 고해상력, 기판에 대한 양호한 밀착성 및 열 안정성 등이 있으며, 또한 간단한 제조 및 응용과정과 악영향을 끼치는 불순물이 함유되지 않아야 하는 것과 경제성 등을 들 수 있다.General properties required for the photosensitive resin include high sensitivity, high resolution, good adhesion to the substrate and thermal stability, and also include simple manufacturing and application processes, and should not contain impurities that adversely affect the economy.

감광성 수지는 positive 형과 negative 형으로 구분할 수 있으며 광 조사된 부분이 가교 또는 중합반응이 일어나 현상시 현상액에 용해되지 않는 형태를 negative 형이라 하고, 이와는 반대로 광 조사된 부분이 분해되어 현상액에 용해되는 형태의 것을 positive 형 감광성 수지라 한다.Photosensitive resins can be classified into positive type and negative type, and the type that is irradiated with light is not dissolved in the developer when developing due to crosslinking or polymerization reaction.The negative type is decomposed and dissolved in developer. Forms are called positive photosensitive resins.

일반적으로 positive 형은 negative 형에 비해 밀착성이 덜하고 피막이 취약하며 알칼리를 현상액으로 사용하기 때문에 노출시간에 민감하다는 단점을 가지지만 도포박이 안정하고 노광시 산소에 대해 민감하지 않으며 해상력과 열에 대한 안정성이 우수하고, 현상 중에 팽윤이 일어나지 않으며 노광, 현상, 건조 후, etching 에 대한 내구성이 우수하여 더 많이 사용된다.In general, the positive type has the disadvantage that it is less sensitive to the exposure time because it is less adhesive and the film is weaker and alkali is used as a developer than the negative type, but the coating foil is stable, it is not sensitive to oxygen during exposure, and the stability of resolution and heat is poor. It is excellent, it does not cause swelling during development, and after exposure, development and drying, it is excellent in durability against etching and is used more.

이 경우 막 형성, 도포 특성, 용해도 등을 개성하기 위해 적당한고분자(matrix resin 또는 base resin)를 PAC이라 불리는 감광성화합물(Photo Active Compond)과 혼용하여 사용한다.In this case, a suitable polymer (matrix resin or base resin) is used in combination with a photoactive compound called PAC to modify the film formation, coating properties, and solubility.

Positive형 PS(Pre-Sensitized)판의 감광재료로 사용되는 감광성수지인 나프토키논 디아지드-노블락 수지는 positive 형의 대표적인 감광재료이다.Naphthokinone diazide-noblock resin, a photosensitive resin used as a photoresist for positive PS (Pre-Sensitized) plates, is a representative photosensitive material of positive type.

나프토퀴논 디아지드 유도체는 노블락 페놀 수지와 혼합하여 이를 지지체에 도포하고 건조하여 감광판을 제조하여 광조사하면 광분해되어 반응성이 좋은 케텐(ketene)을 형성하고 이때 발생하는 질소 기체에 의한 영향과 ketene 이 수분과 반응하여 형성되는 카르복실산(carboxylic acid)에 의해 현상액에서 용해도가 상승하는 반응 메카니즘에 의해 포지티브 화상을 형성하게 된다.The naphthoquinone diazide derivative is mixed with a noblock phenolic resin, applied to a support, dried, and manufactured to form a photosensitive plate, which is photolyzed to form a highly reactive ketene, which is reacted with nitrogen gas and ketene A positive image is formed by a reaction mechanism in which the solubility is increased in the developer by the carboxylic acid formed by reaction with water.

일반적으로 많이 쓰여지는 노볼락수지는 산촉매로 반응시킨 크레졸-포름알데드(cresol-formaldehyde) 축중합체의 열가소성 수지로서 기판(실리콘, 알루미늄)과의 점착성 및 열안정성이 있고, 사진 식각공정에서 사용되어 지는 식각용액과 같은 화합물들에 대한 내구성이 뛰어날 뿐만 아니라, 감광기 즉 나프토퀴논 아지드(naphthoquinone azide)가 광화학 반응을 일으키는 436nm 또는 265nm 파장의 빛에 대해서 거의 흡수하지 않으므로 감광기의 광화학 반응에 전혀 방해를 하지 않아서 포토레지스트(photoresist)의 base resin으로서 아주 적합하며 물적 성능의 향상을 위해 대신 크레졸 수지가 이용되기도 한다.Novolac resins, which are commonly used, are thermoplastic resins of cresol-formaldehyde condensers reacted with acid catalysts, have adhesiveness and thermal stability to substrates (silicon and aluminum), and are used in photolithography processes. Not only is it resistant to compounds such as etch solutions, but it also absorbs light at 436 nm or 265 nm wavelengths, causing photochemical reactions such as naphthoquinone azide. Because it does not interfere at all, it is well suited as a base resin for photoresist, and cresol resins may be used instead to improve physical performance.

특히 인쇄기판으로 이용되는 positive-type PS판의 감광재료로 NQD/노볼락계 수지는 인쇄판의 가장 중요한 내쇄력을 가지기 위해 고분자의 구조와 기계적 특성에 따라 크게 영향을 받는다. 나프토퀴논 디아지드는 수지의 변형에 의해 고집적회로 반도체 가공용 포지티브형 포토 레지스트로서 많이 사용되고 있다.In particular, as a photosensitive material of positive-type PS plate used as a printed board, NQD / novolak-based resin is greatly influenced by the structure and mechanical properties of the polymer to have the most important printing strength of the printed plate. Naphthoquinone diazide is widely used as a positive photoresist for processing highly integrated circuit semiconductors due to deformation of the resin.

또한 중요한 것으로 치환체에 의한 감광 특성이 있으며 치환체로는 감광도가 큰 것을 주로 사용하는데 감광도는 일반적으로 사용하는 Halogen Lamp에 대응하는 350∼400nm의 흡수파장영역을 가진 naphthoquinone diazide(NQD)의 5-position 에 설포닐(-SO2-)기가 있는 것을 사용한다.Importantly, there are photosensitivity characteristics by substituents, and those with large photosensitivity are mainly used. The photosensitivity is in the 5-position of naphthoquinone diazide (NQD) having an absorption wavelength region of 350-400 nm corresponding to the halogen lamp generally used. Use is made of sulfonyl (-SO 2- ) groups.

PAC의 중요한 물리적인 성질은 흡광 스펙트럼 영역이 광원(Halogen Lamp)의 발광 스펙트럼과의 좋은 일치성과 좋은 광퇴색도를 가져야 하며, 매트릭스 수지와의 적합성이 좋아야 하며, 또한 열적 안정성이 필요하다.An important physical property of PAC is that the absorption spectrum region should have good agreement with the emission spectrum of the Halogen Lamp and good photobleaching, good compatibility with the matrix resin, and also need thermal stability.

PAC은 후속하는 공정 때문에 좋은 용해성, 감도 및 해상력 등의 물성이 요구되어 진다. 일반적으로 hydroxybenzophenone 유도체에 NQD를 치환한 PAC의 문제점으로는 실온에서의 용해도가 좋지 않아 결정화가 되어 PS판 제조가 용이하지 않다는 것이며, 이를 위해 hydroxy group에 치환되는 NQD의 양을 조절함으로써 hydroxy group을 남겨 용해도를 증가시키는 방법을 사용하였으나, 이 방법의 문제점으로는 충분한 현상능력을 가지기 위해 필요한 PAC의 양이 늘어난다는 단점과 이에 따른 benzophenone 사용량의 증가로 인한 단가상승의 문제가 있다.PAC requires physical properties such as good solubility, sensitivity and resolution due to subsequent processes. In general, the problem of PAC in which NQD is substituted for hydroxybenzophenone derivative is that it is not so easy at room temperature so crystallization is not easy to manufacture PS plate. For this purpose, the hydroxy group is left by controlling the amount of NQD substituted for hydroxy group. The method of increasing solubility was used, but problems of this method include the disadvantage of increasing the amount of PAC needed to have sufficient developing ability and a problem of unit price increase due to the increase of benzophenone usage.

본 발명은 상기한 바와 같은 문제점을 해결하기 위한 것으로, 용해도와 감도 및 해상도가 우수한 NQD계 감광재료를 제공하는 것이다. 본 발명의 또 다른 목적은 현상능력을 발휘하기 위하여 필요한 benzophenone 사용량이 줄어듦으로써 생산단가가 저렴한 NQD계 감광재료를 제공하는 것이다.The present invention is to solve the above problems, to provide an NQD-based photosensitive material excellent in solubility, sensitivity and resolution. It is still another object of the present invention to provide an NQD-based photosensitive material having low production cost by reducing the amount of benzophenone required to achieve developing ability.

도 1은 2-Hydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 UV 스펙트럼이고,1 is a UV spectrum of 2-Hydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5],

도 2는 2,2'-Dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 UV스펙트럼이고,2 is a UV spectrum of 2,2'-Dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5],

도 3은 2-Hydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 NMR 스펙트럼이고,3 is an NMR spectrum of 2-Hydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5],

도 4는 2,2'-Dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 NMR 스펙트럼이고,4 is an NMR spectrum of 2,2'-Dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5],

도 5은 본 발명에 의한 PS판의 Positive 이미지이고,5 is a positive image of the PS plate according to the present invention,

도 6는 본 발명에 의한 PS판의 5도트 이미지이다.6 is a five-dot image of the PS plate according to the present invention.

본 발명의 감광재료는 NQD와 benzophenone 내에 methoxy group이 도입된 하이드록시벤조페논계 유도체가 축중합한 것을 특징으로 한다. 바람직한 하이드록시 벤조페논계 유도체는 2-hydroxy-4-methoxybenzophenone과 2,2'-dihydroxy-4-methoxybenzophenone이다.The photosensitive material of the present invention is characterized by condensation polymerization of a hydroxybenzophenone derivative in which a methoxy group is introduced into NQD and benzophenone. Preferred hydroxy benzophenone derivatives are 2-hydroxy-4-methoxybenzophenone and 2,2'-dihydroxy-4-methoxybenzophenone.

이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.

본 발명의 NQD계 감광재료는 NQD-Na로부터 NQD-Cl를 합성한 후, 합성된 NQD-Cl과 methoxy group이 도입된 hydroxybenzophenone 유도체로는 2-hydroxy-4-methoxybenzophenone 과 2,2'-dihydroxy-4-methoxybenzophenone을 축중합시킨다. 이들을 발라스트(ballast)로 사용할 경우, 현상능력을 부여하기 위하여 사용되는 PAC의 양을 현저하게 줄일 수 있다.The NQD-based photosensitive material of the present invention is synthesized NQD-Cl from NQD-Na, and the hydroxybenzophenone derivatives in which the synthesized NQD-Cl and methoxy group are introduced, 2-hydroxy-4-methoxybenzophenone and 2,2'-dihydroxy- Polycondensate 4-methoxybenzophenone. If they are used as ballast, the amount of PAC used to impart developing ability can be significantly reduced.

2,2'-Dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 감도는 3, 4개가 NQD로 치환된 NQD-에스테르와 비슷한 감도를 보이게 된다.The sensitivity of 2,2'-Dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5] is similar to that of NQD-ester substituted with 3 or 4 NQD.

본 발명에 의한 감광액의 노광전 UV흡수는 320-420nm의 특성 흡광도를 보여주며, 최대 흡광 파장은 350nm 정도로 좋은 광퇴색도를 보여 준다.UV absorption before exposure of the photosensitive liquid according to the present invention shows a characteristic absorbance of 320-420nm, the maximum absorption wavelength shows a good photobleaching degree of about 350nm.

본 발명의 실시예는 다음과 같다.Embodiments of the present invention are as follows.

본 발명에서 사용되는 발라스트와 비교할 hydroxybenzophenone 유도체인 4,4'-dihydroxybenzophenone, 2,4'-dihydroxybenzophenone, 2,3,4'-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,3,4,4'-tetrahydroxybenzophenone과 2,2',4,4'-tetrahydroxybenzophenone을 NQD-Cl과 축합반응을 통해 2-diazo-1-naphthoquinone-5-sulfonyl acid-ester(NQD-ester)를 합성시켰다.4,4'-dihydroxybenzophenone, 2,4'-dihydroxybenzophenone, 2,3,4'-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone, 2,3,4,4, which are hydroxybenzophenone derivatives to be compared with the ballast used in the present invention 2-diazo-1-naphthoquinone-5-sulfonyl acid-ester (NQD-ester) was synthesized by condensation of '-tetrahydroxybenzophenone and 2,2', 4,4'-tetrahydroxybenzophenone with NQD-Cl.

사용된 hydroxybenzophenone 유도체의 구조식은 아래의 1-8과 같다.The structural formula of the hydroxybenzophenone derivative used is shown in 1-8 below.

인쇄 제판 공정에 이용할 수 있는 감광재료로서의 가능성을 검토하기 위해 합성한 NQD-ester와 matrix인 novolac수지를 공지된 무게 혼합비율로 혼용하였으며 이를 알루미늄판에 회전도포하고 건조하여 PS판을 제조하여 망점 재현성에 따른 노광시간을 비교 측정해 보았고, 이들 합성물에 대한 흡광 파장영역과 흡광도, 광퇴색도[8], 상대감도를 측정하여 감광 특성을 비교하였다.In order to examine the possibility of photosensitive materials that can be used in the printing process, the synthesized NQD-ester and the matrix novolac resin were mixed at a known weight mixing ratio. The exposure time was compared and measured, and the light absorption wavelength region, absorbance, photobleaching [8], and relative sensitivity of these composites were measured to compare photosensitive characteristics.

<실시예 1-2 및 비교예 3-8><Example 1-2 and Comparative Example 3-8>

1. 시약 및 재료1. Reagents and Materials

Sodium-2-diazo-1-naphthoquinone-5-sulfonate과 novolac 수지(MW=7,000)는 (주)다라니로 부터 제공받았으며, chlorosulfonic acid는 KANTO사의 시약을 정제 없이 사용하였고, ballast로 사용된 hydroxybenzopenone 유도체인 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone 및 2,3',4,4'-tetrahydroxybenzophenone는 TCI사의 시약급을 4,4-dihydroxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2,3,4-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone 및 2,2',4,4'-tetrahydroxybenzophenone 는 Aldrich 사의 시약을 정제 없이 사용하였다. Dioxane, butylcellusolve, γ-butyrolactone 등의 용매는 일급시약을 그대로 사용하였다.Sodium-2-diazo-1-naphthoquinone-5-sulfonate and novolac resin (MW = 7,000) were supplied by Darani Co., Ltd., and chlorosulfonic acid was used as a ballast hydroxybenzopenone derivative without purification. 2-hydroxy-4-methoxybenzophenone, 2,4-dihydroxybenzophenone, and 2,3 ', 4,4'-tetrahydroxybenzophenone are TCI's reagent grade 4,4-dihydroxybenzophenone, 2,2'-dihydroxy-4-methoxybenzophenone, 2, 3,4-trihydroxybenzophenone, 2,4,4'-trihydroxybenzophenone and 2,2 ', 4,4'-tetrahydroxybenzophenone were used without purification from Aldrich's reagent. Dioxane, butylcellusolve, and γ-butyrolactone were used as primary reagents.

2. PAC의 합성 및 감광액의 제조2. Synthesis of PAC and Preparation of Photoresist

1) 2-Diazo-naphthoquinone-5-sulfonyl chloride의 합성1) Synthesis of 2-Diazo-naphthoquinone-5-sulfonyl chloride

1,000㎖ 3구 플라스크에 chlorosulfonic acid 1,000g(8.58 mol)을 넣고 온도를 7℃이하로 유지하면서 sodium-2-diazo-napthoquinone-5-sulfonate 150g(0.55 mol)을 천천히 적하 하였다. 적하가 완료되면 상온에서 30분 정도 더 교반 한 후 반응혼합물을 58℃에서 12시간 반응시켰다. 반응이 완료되면 반응물의 온도를 상온으로 내린 후 10배의 부피비를 가지는 얼음물에 천천히 적하 하였다. 생성된 침전물을 감압 여과하고 냉각수로 중성이 될 때까지 수세한 후 감압 건조하여 노란색 결정의 2-diazo-naphthoquinone-5-sulfonyl chloride 118g을 얻었다.(수율 80)1,000 g (8.58 mol) of chlorosulfonic acid was added to a 1,000 ml three-necked flask and 150 g (0.55 mol) of sodium-2-diazo-napthoquinone-5-sulfonate was slowly added dropwise while maintaining the temperature below 7 ° C. After the dropping was completed, the mixture was stirred for about 30 minutes at room temperature, and the reaction mixture was reacted at 58 ° C for 12 hours. After the reaction was completed, the temperature of the reactant was lowered to room temperature, and then slowly dropped into ice water having a volume ratio of 10 times. The resulting precipitate was filtered under reduced pressure, washed with water until neutral, and dried under reduced pressure to obtain 118 g of 2-diazo-naphthoquinone-5-sulfonyl chloride as yellow crystals (yield 80).

2) 2-Diazo-1-naphthoquinone-5-sulfonyl acid ester의 합성2) Synthesis of 2-Diazo-1-naphthoquinone-5-sulfonyl acid ester

Sodium-2-diazo-napthoquinone-5-sulfonyl chloride 와 각각의 ballast 를 dioxane과 증류수의 혼합용액(2:1)에 용해시키고 온도를 7℃이하로 유지시켰다. 교반하면서 20Na2CO3용액을 pH가 9이상이 될 때까지 천천히 적하 하였다. 반응물을 3배 이상의 증류수에 서서히 첨가하여 침전물을 얻었다. 침전물을 감압 여과한 후 중성이 될 때까지 수세하여 주고 감압 건조하여 노란색결정의 NQD-ester를 얻었다. 사용된 NQD-Cl과 각각의 ballast 의 양과 수율은 아래의 표 1과 같다.Sodium-2-diazo-napthoquinone-5-sulfonyl chloride and each ballast were dissolved in a mixed solution of dioxane and distilled water (2: 1) and the temperature was kept below 7 ° C. While stirring, the 20Na 2 CO 3 solution was slowly added dropwise until the pH became 9 or more. The reaction was slowly added to distilled water three or more times to obtain a precipitate. The precipitate was filtered under reduced pressure, washed with water until neutral, and dried under reduced pressure to obtain yellow crystal NQD-ester. The amount and yield of NQD-Cl and each ballast used are shown in Table 1 below.

구 분division BallastBallast NQD-ClNQD-Cl Yield()Yield () Hydroxybenzophenone derivativesHydroxybenzophenone derivatives Weight(g)Weight (g) Weight(g)Weight (g) 실시예 1Example 1 2-Hydroxy-4-methoxybenzophenone2-Hydroxy-4-methoxybenzophenone 1010 3030 9191 실시예 2Example 2 2,2'-Dihydroxy-4-methoxybenzophenone2,2'-Dihydroxy-4-methoxybenzophenone 99 2424 8080 비교예 1Comparative Example 1 2,4-Dihydroxybenzophenone2,4-Dihydroxybenzophenone 99 2424 6565 비교예 2Comparative Example 2 4,4'-Dihydroxybenzophenone4,4'-Dihydroxybenzophenone 99 2424 8484 비교예 3Comparative Example 3 2,3,4-Trihydroxybenzophenone2,3,4-Trihydroxybenzophenone 88 4747 9595 비교예 4Comparative Example 4 2,4,4'-Trihydroxybenzophenone2,4,4'-Trihydroxybenzophenone 88 4747 9090 비교예 5Comparative Example 5 2,3,4,4'-Tetrahydroxybenzophenone2,3,4,4'-Tetrahydroxybenzophenone 99 4242 9090 비교예 6Comparative Example 6 2,2'4,4'-Tetrahydroxybenzophenone2,2'4,4'-Tetrahydroxybenzophenone 99 4242 8989

3) PS판의 제조 및 감광 특성확인3) Preparation of PS plate and confirmation of photosensitive characteristics

3-1) NQD-ester의 용해특성3-1) Dissolution Characteristics of NQD-ester

NQD-ester의 용해특성을 알아보기 위해 일반적으로 사용되는 용제인cellusolve 종류와 NQD-ester의 용해도가 좋은 γ-butyrolactone의 상온에서의 용해특성과 60℃에서의 용해특성을 측정하였다. 결과는 아래의 표 2와 같다.In order to investigate the dissolution characteristics of NQD-ester, the solubility of γ-butyrolactone, which is a commonly used solvent and NQD-ester, was measured at room temperature and at 60 ℃. The results are shown in Table 2 below.

구 분division NQD-esterNQD-ester Methy1cellusolveMethy1cellusolve Buty1cellusolveButy1cellusolve γ-Butyrolactoneγ-Butyrolactone 실시예 1Example 1 2-Hydroxy-4-methoxybenzophenonebis[DIAZO-2,1,5]2-Hydroxy-4-methoxybenzophenonebis [DIAZO-2,1,5] 실시예 2Example 2 2,2'-Dihydroxy-4-methoxybenzophenonebis[DIAZO-2,1,5]2,2'-Dihydroxy-4-methoxybenzophenonebis [DIAZO-2,1,5] 비교예 1Comparative Example 1 2,4-Dihydroxybenzophenonebis[DIAZO-2,1,5]2,4-Dihydroxybenzophenonebis [DIAZO-2,1,5] 비교예 2Comparative Example 2 4,4'-Dihydroxybenzophenonebis[DIAZO-2,1,5]4,4'-Dihydroxybenzophenonebis [DIAZO-2,1,5] ×× ×× 비교예 3Comparative Example 3 2,3,4-Trihydroxybenzophenonebis[DIAZO-2,1,5]2,3,4-Trihydroxybenzophenonebis [DIAZO-2,1,5] 비교예 4Comparative Example 4 2,4,4'-Trihydroxybenzophenonebis[DIAZO-2,1,5]2,4,4'-Trihydroxybenzophenonebis [DIAZO-2,1,5] 비교예 5Comparative Example 5 2,3,4,4'-Tetrahydroxybenzophenonebis[DIAZO-2,1,5]2,3,4,4'-Tetrahydroxybenzophenonebis [DIAZO-2,1,5] 비교예 6Comparative Example 6 2,2'4,4'-Tetrahydroxybenzophenonebis[DIAZO-2,1,5]2,2'4,4'-Tetrahydroxybenzophenonebis [DIAZO-2,1,5] ×× ××

○ : solvent at room temperature, △ : soluble at 60℃○: solvent at room temperature, △: soluble at 60 ℃

× : insoluble×: insoluble

3-2) PS판의 제조3-2) Manufacturing of PS Plate

Matrix 수지와 합성한 NQD-ester들을 4 : 1 의 무게 비율로 하여 γ-butyrolactone과 butyl cellusolve 의 1 : 1 혼합 용매에 약한 열을 가하여 장시간 교반 후 완전히 용해시킨 후 여기에 0.3의 염료를 첨가하여 실온에서 장시간 교반 후 filter로 여과하여 감광액을 제조하였다.NQD-esters synthesized with the matrix resin were added at a weight ratio of 4: 1 to a 1: 1 solvent of γ-butyrolactone and butyl cellusolve. After stirring for a long time and filtered with a filter to prepare a photosensitive liquid.

Formulation 의 조건을 표 3에 나타내었다. 지지체로 사용되는 Al판은 표면에 감광제 도포(coating)시 접착성을 높이기 위해 전해연마 처리된 것을 사용하였다. 여과된 감광액을 spin coater에 의해 2㎛의 두께로 조절하면서 PS판에 도포하였다. 도포된 감광액 내에 용제가 잔존하면 노광(exposure)에 방해요인이 되므로 용제의 완전한 제거를 위해 100℃∼120℃에서 60초간 건조하여 PS판을 제조하였다. 노광은 USHIO사의 3kW halogen lamp를 사용하여 20초 동안 노광하였다.The conditions of Formulation are shown in Table 3. Al plate used as a support was used electrolytic polishing treatment to increase the adhesiveness when the photosensitive agent coating (coating) on the surface. The filtered photosensitive solution was applied to the PS plate while adjusting to a thickness of 2 μm by a spin coater. Since the solvent remains in the coated photoresist, it is an obstacle to exposure. Thus, a PS plate was prepared by drying at 100 ° C. to 120 ° C. for 60 seconds to completely remove the solvent. The exposure was performed for 20 seconds using a 3kW halogen lamp of USHIO.

현상(developing)은 시판되고 있는 현상액을 탈이온화수와 1 : 8의 부피 비율의 수용액에서 25℃를 유지하면서 PS판을 침적, bath를 교반하고 현상 후 PC판을 탈이온화수로 수세하였으며 현상시간은 60초에서 100초 이내로 제한하였다.The development was carried out by dipping the PS plate in a deionized water and an aqueous solution of volume ratio of 1: 8 while maintaining the temperature of 25 DEG C in a PS plate, stirring the bath, and developing the PC plate in deionized water. Was limited to within 60 to 100 seconds.

수세한 PS판에 수분을 제거하고 남아있는 현상액을 제거하기 위해 건조(hard baking)로 100℃에서 60초간 건조하였다.Water was washed on the washed PS plate and dried for 60 seconds at 100 ° C. by hard baking to remove the remaining developer.

WeightWeight WeightWeight Novolac resinNovolac resin 20g20 g 3030 PACPAC 5g5 g 7.77.7 SolventSolvent 4.0g4.0g 6262 Dye(crystal violet)Dye (crystal violet) 0.2g0.2 g 0.30.3

3-3) 광퇴색도의 측정3-3) Measurement of Photobleaching

제조된 PS판에 Halogen Lamp를 사용하여 10초 간격으로 노광시키고 acetonitrile에 용해시킨 후 SCINCO UV S-2040 spectrometer 로 측정하여 광퇴색도를 확인하였으며 완전히 광변환하여 흡광도가 최저치가 되는데 필요한 시간을 측정하였다.The PS plate was exposed to light at 10 second intervals using a Halogen Lamp, dissolved in acetonitrile, and then measured with a SCINCO UV S-2040 spectrometer to confirm photobleaching. .

3-4) 화상형성확인 및 감도 측정3-4) Image Formation Check and Sensitivity Measurement

PS판에 망점 film을 사용하여 노광하고 현상하여 최소 망점이 형성되는 현상 시간을 결정하였다. 생성된 pattern을 image analyzer를 사용하여 확인하였다.Exposure time was developed using a dot film on the PS plate and developed to determine a developing time at which a minimum dot was formed. The generated pattern was confirmed using an image analyzer.

감도는 보편적으로 사용되는 gray scale법을 사용하여 상대감도를 구했다.The sensitivity was calculated using the gray scale method, which is commonly used.

S1/S0 = 100.102( k - j )S1 / S0 = 100.102 (k-j)

여기서 S0= 기준 시료 감도Where S 0 = reference sample sensitivity

S1= 대조 시료 감도S 1 = control sample sensitivity

상대 감도를 기준 시료와 측정 대상 시료의 단수 차이 ( k - j )에 의해 구했다.Relative sensitivity was calculated | required by the singular difference (k-j) of a reference sample and a sample to measure.

결과는 아래의 아래의 표 4와 같다.The results are shown in Table 4 below.

구 분division NQD-esterNQD-ester Step numberStep number time(sec)time (sec) Number of NQDNumber of NQD RelativesensitivityRelativesensitivity Standard(commercial product)Standard (commercial product) 66 6060 100100 실시예 1Example 1 2-Hydroxy-4-methoxybenzophenonebis[DIAZO-2,1,5]2-Hydroxy-4-methoxybenzophenonebis [DIAZO-2,1,5] 88 6060 1One 160160 실시예 2Example 2 2,2'-Dihydroxy-4-methoxybenzophenonebis[DIAZO-2,1,5]2,2'-Dihydroxy-4-methoxybenzophenonebis [DIAZO-2,1,5] 1010 6060 22 256256 비교예 1Comparative Example 1 2,4-Dihydroxybenzophenonebis[DIAZO-2,1,5]2,4-Dihydroxybenzophenonebis [DIAZO-2,1,5] 88 6060 22 160160 비교예 2Comparative Example 2 4,4'-Dihydroxybenzophenonebis[DIAZO-2,1,5]4,4'-Dihydroxybenzophenonebis [DIAZO-2,1,5] 99 6060 22 202202 비교예 3Comparative Example 3 2,3,4-Trihydroxybenzophenonebis[DIAZO-2,1,5]2,3,4-Trihydroxybenzophenonebis [DIAZO-2,1,5] 99 6060 33 202202 비교예 4Comparative Example 4 2,4,4'-Trihydroxybenzophenonebis[DIAZO-2,1,5]2,4,4'-Trihydroxybenzophenonebis [DIAZO-2,1,5] 1010 6060 33 256256 비교예 5Comparative Example 5 2,3,4,4'-Tetrahydroxybenzophenonebis[DIAZO-2,1,5]2,3,4,4'-Tetrahydroxybenzophenonebis [DIAZO-2,1,5] 1010 6060 44 256256 비교예 6Comparative Example 6 2,2'4,4'-Tetrahydroxybenzophenonebis[DIAZO-2,1,5]2,2'4,4'-Tetrahydroxybenzophenonebis [DIAZO-2,1,5] 99 6060 44 202202

4) 분석 및 기기4) Analysis and Instrument

합성된 NQD-Cl과 NQD-ester를 확인하기 위해 300MHz1H NMR (VARIAN UNITY plus 300 spectrometer)을 사용하였다. 용매는 DMSO-d6,내부 표준시료로는 TMS를 사용하였다. IR스펙트럼 분석은 KBr과 함께 pellet을 만들어 NICOLET 800 spectrophotometer를 사용하였으며 흡광 영역, 최대 흡수 피이크(λmax)와 UV 노광량에 따른 흡수 피이크의 변화를 조사하기 위해 SCINCO S-2040 UV spectrophotometer를 이용하였다. UV 노광기의 광원으로는 USHIO사의 3kW metal halide lamp를 사용하였고 광원에서 40cm 떨어진 위치에서 노광하였다.A 300 MHz 1 H NMR (VARIAN UNITY plus 300 spectrometer) was used to confirm synthesized NQD-Cl and NQD-ester. DMSO-d 6 was used as a solvent and TMS was used as an internal standard sample. For IR spectrum analysis, pellets were prepared with KBr and NICOLET 800 spectrophotometer was used, and SCINCO S-2040 UV spectrophotometer was used to investigate the change of absorption peak according to absorption area, maximum absorption peak (λ max ) and UV exposure. USHIO's 3kW metal halide lamp was used as the light source of the UV exposure machine and exposed at a position 40 cm away from the light source.

3. 결과3. Results

1) 합성물의 합성확인1) Synthesis confirmation of compound

1-1) 2-Diazo-naphthoquinone-5-sulfonyl chloride 의 합성 확인1-1) Confirmation of 2-Diazo-naphthoquinone-5-sulfonyl chloride

합성된 NQD-Cl의 확인결과를 보기 위해 IR 분석을 하였다. IR 스펙트럼에서 1614 cm-1에서 naphthoquinone의 C=O 특성 흡수대와 2122 cm-1에서 C=N=N의 특성 흡수대와 1264 cm-1에서 -SO2-의 특성 흡수대가 각각 나타나고, NMR 스펙트럼 결과 7.31ppm과 7.62ppm에서 NQD group의 벤젠고리의 3번과 4번 위치에 붙어있는 수소 피이크가 나타나므로 NQD-Cl의 합성을 알 수 있었다. UV 스펙트럼 결과 320∼420nm의 특성 흡광대를 보여주며 최대 흡광파장은 354.9nm이었다.IR analysis was performed to see the results of the synthesis of NQD-Cl. In the IR spectrum, C = O characteristic absorption band of naphthoquinone at 1614 cm -1 and C = N = N characteristic absorption band at 2122 cm -1 and -SO 2 -characteristic absorption band at 1264 cm -1 , respectively. Hydrogen peaks attached at positions 3 and 4 of the benzene ring of the NQD group appeared at ppm and 7.62 ppm, indicating the synthesis of NQD-Cl. The UV spectrum showed a characteristic absorption band of 320-420 nm and the maximum absorption wavelength was 354.9 nm.

1-2) 2-Diazo-1-naphthoquinone-5-sulfonyl acid ester의 합성 확인1-2) Confirmation of 2-Diazo-1-naphthoquinone-5-sulfonyl acid ester

합성된 NQD-ester의 확인결과를 보기 위해 IR 분석을 하였다.IR analysis was performed to see the results of the synthesis of NQD-ester.

2-Hydroxy-4-methoxybenzophenone bis[DIAZO-2, 1, 5]과 2,2'-dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 IR 스펙트럼 결과, hydroxybenzophenone 유도체의 IR 스펙트럼에서 3500cm-1의 -OH group의 특성 흡수대는 사라지고 각각의 NQD-ester의 IR 스펙트럼에서 1614 cm-1에서 naphthoquinone과 benzophenone의 C=O 특성 흡수대, 2120 cm-1에서 C=N=N의 특성 흡수대와 1261 cm-1에서 -SO2-의 특성 흡수대가 각각 나타났다.IR spectrum results of 2-Hydroxy-4-methoxybenzophenone bis [DIAZO-2, 1, 5] and 2,2'-dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5], 3500 cm from the IR spectrum of the hydroxybenzophenone derivative The characteristic absorption band of -OH group of -1 disappears and the C = O characteristic absorption band of naphthoquinone and benzophenone at 1614 cm -1 in the IR spectrum of each NQD-ester, and the C = N = N characteristic absorption band at 2120 cm -1 and 1261 In cm -1 , the characteristic absorption band of -SO 2 -appeared, respectively.

합성된 NQD-ester의 확인을 위하여1H-NMR 분석을 하였다. NQD-ester를 DMSO-d6에 용해시켜1H-NMR 결과를 분석한 결과, 8.05ppm과 7.54ppm에서 NQD기의 벤젠환의 3번과 4번위치에 붙어있는 수소 피이크가 나타나 있으며 6.73ppm에 benzophenone의 벤젠환의 3번 위치에 붙어 있는 수소 피이크와 3.82ppm에서 methoxy 기의 수소 피이크가 나타나는 것으로부터 2-hydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]가 합성된 것을 알 수 있으며, 8.53ppm과 7.99ppm에서 NQD기의 벤젠환의 3번과 4번 위치에 붙어있는 수소 피이크가 나타나 있으며 6.73ppm에 benzophenone의 벤젠환의 3번 위치에 붙어 있는 수소 피이크와 3.82ppm에서 methoxy기의 수소 피이크가 나타나는 것으로부터 2,2'-dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]이 합성된 것을 알 수 있었다. 1 H-NMR analysis was performed to confirm synthesized NQD-ester. Analysis of 1 H-NMR results by dissolving NQD-ester in DMSO-d 6 showed hydrogen peaks at positions 3 and 4 of the benzene ring of the NQD group at 8.05 ppm and 7.54 ppm, and benzophenone at 6.73 ppm. From the hydrogen peak at position 3 of the benzene ring of and the methoxy hydrogen peak at 3.82 ppm, 2-hydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5] was synthesized. Hydrogen peaks attached at positions 3 and 4 of the benzene ring of the NQD group are shown at ppm and 7.99 ppm, and hydrogen peaks attached at position 3 of the benzene ring of the benzophenone at 6.73 ppm and methoxy hydrogen peaks of 3.82 ppm are shown. It was found that 2,2'-dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5] was synthesized.

2) 감광제의 특성 평가2) Characterization of Photosensitive Agent

2-1) 용해특성2-1) Dissolution Characteristics

용해특성 결과 NQD-ester의 구조에 의해 용해특성 결과가 달라지는 것을 확인할 수 있었다.As a result of the dissolution characteristics, it was confirmed that the dissolution characteristics result was changed by the structure of NQD-ester.

Benzophenonne의 hydroxy group이 완전히 NQD grouop으로 치환된 NQD-ester들 중 대칭구조를 가지는 ester는 유기용매에 대한 용해도가 좋지 않은 것을 볼 수 있었으며 2,2'-dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]은 좋은 용해특성을 보여 주었다.Among the NQD-esters, in which the hydroxy group of benzophenonne was completely substituted with NQD grouop, the symmetric ester showed poor solubility in organic solvents. 1,5] showed good dissolution characteristics.

2-2) 광퇴색도 측정 결과2-2) Photochromicity measurement result

광퇴색도를 측정하기 위해 10초 간격으로 노광하여 UV스펙트럼을 조사한 결과 NQD가 1개 또는 2개가 치환된 것은 30초에 흡광도가 최저치가 되며 3개 또는 4개가 치환된 것은 40초에 최저치가 되는 것을 알 수 있었다.In order to measure the photobleaching, the UV spectrum was investigated by exposure at 10 second intervals. As a result, one or two NQD substitutions resulted in the lowest absorbance at 30 seconds, and three or four substitutions reached the lowest in 40 seconds. I could see that.

도 1과 2는 UV스펙트럼 결과로, 2-hydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]과 2,2'-dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]의 광퇴색도를 보여주며 노광부가 완전히 광변화하여 현상액에 의해 완전히 용해한 화상형성 시간을 보여 준다.1 and 2 show UV spectra, and the light of 2-hydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5] and 2,2'-dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5] It shows the degree of fading and shows the image formation time when the exposed part is completely changed by the developing solution.

2-3) 화상형성 확인2-3) Image Formation Check

UV 스펙트럼에 의한 광퇴색도 결과에서 얻은 완전히 노광되어 광변환하는 시간을 각각의 감광성 수지에 적용하여 망점 film을 사용하여 망점 재현성을 확인 해 본 결과 상용화되고 있는 감광성 수지 보다 우수한 망점 재현성을 볼 수 있었다.As a result of confirming the dot reproducibility using a dot film by applying the time of fully exposed and photoconversion to each photosensitive resin obtained from the photobleaching degree result by UV spectrum, the dot reproducibility was better than that of commercial photosensitive resin. .

도 3은 2,2'-dihydroxy-4-methoxybenzophenone bis[DIAZO-2,1,5]을 사용하여 제작된 PS판을 노광하고 현상하여 얻은 positive 화상을 scan한 결과이며 도 4는 5망점 재현성을 Image analyzer를 사용하여 확인한 결과이다.FIG. 3 is a result of scanning a positive image obtained by exposing and developing a PS plate manufactured using 2,2'-dihydroxy-4-methoxybenzophenone bis [DIAZO-2,1,5]. FIG. The result was confirmed using an image analyzer.

이상의 실시예 및 비교예를 통하여 알 수 있는 바와 같이, 대칭구조를 가지는 NQD-ester들은 용해도가 떨어지는 단점을 보이나 methoxy group이 도입된 NQD-ester는 PS판의 제조에 적합한 용해특성을 보여주며, 감광액의 노광전 UV 흡수는 320∼420nm의 특성 흡광대를 보여주며, 최대 흡광파장은 350nm 정도이며 좋은 광퇴색도를 보여 주며, 노광 후 현상시 좋은 화상형성 기능을 보여준다.As can be seen from the above examples and comparative examples, NQD-esters having a symmetrical structure show poor solubility, but NQD-ester having a methoxy group introduced shows suitable dissolution properties for the production of PS plates. UV absorption of before shows a characteristic absorption band of 320 ~ 420nm, the maximum absorption wavelength is about 350nm and shows a good light fading, and shows good image forming function during development after exposure.

Claims (2)

2-디아조-나프토퀴논-5-설포닐 클로라이드와 메톡시 그룹이 도입된 하이드록시벤조페논계 유도체를 축중합하여 얻어진 것을 특징으로 하는 PS판용 나프토퀴논-디아지드계 감광재료.A naphthoquinone-diazide photosensitive material for PS plates, which is obtained by condensation polymerization of 2-diazo-naphthoquinone-5-sulfonyl chloride and a hydroxybenzophenone derivative in which a methoxy group is introduced. 제 1항에 있어서, 메톡시 그룹이 도입된 하이드록시벤조페논계 유도체는 2-하이드록시-4-메톡시벤조페논 및 2,2'-디하이드록시-4-메톡시벤조페논을 포함하는 것을 특징으로 하는 PS판용 나프토퀴논-디아지드계 감광재료.The hydroxybenzophenone derivatives having a methoxy group introduced therein include 2-hydroxy-4-methoxybenzophenone and 2,2'-dihydroxy-4-methoxybenzophenone. A naphthoquinone-diazide photosensitive material for PS plates characterized by the above-mentioned.
KR1019990032056A 1999-08-05 1999-08-05 Naphtoquinone-diazide Ester Photosensitive Material for PS Plate Use KR100318092B1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840004962A (en) * 1982-06-03 1984-10-31 엘빈 감스 브리기테나우만 Photosensitive composition of a positive light resistance material
JPS61231541A (en) * 1985-04-06 1986-10-15 Nippon Seihaku Kk Photosensitive lithographic plating material
US4738915A (en) * 1984-12-14 1988-04-19 Tokyo Ohka Kogyo Co., Ltd. Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone
KR890008606A (en) * 1987-11-27 1989-07-12 이또오 다께오 Positive-Working Photoresist Composition
KR890015067A (en) * 1988-03-23 1989-10-28 원본미기재 Photosensitive resin composition and pattern formation method using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR840004962A (en) * 1982-06-03 1984-10-31 엘빈 감스 브리기테나우만 Photosensitive composition of a positive light resistance material
US4738915A (en) * 1984-12-14 1988-04-19 Tokyo Ohka Kogyo Co., Ltd. Positive-working O-quinone diazide photoresist composition with 2,3,4-trihydroxybenzophenone
JPS61231541A (en) * 1985-04-06 1986-10-15 Nippon Seihaku Kk Photosensitive lithographic plating material
KR890008606A (en) * 1987-11-27 1989-07-12 이또오 다께오 Positive-Working Photoresist Composition
KR890015067A (en) * 1988-03-23 1989-10-28 원본미기재 Photosensitive resin composition and pattern formation method using the same

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