KR100312286B1 - Electrolytic polishing composition for copper or copper alloy substrate and iron-nickel alloy substrate - Google Patents

Electrolytic polishing composition for copper or copper alloy substrate and iron-nickel alloy substrate Download PDF

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KR100312286B1
KR100312286B1 KR1019970055517A KR19970055517A KR100312286B1 KR 100312286 B1 KR100312286 B1 KR 100312286B1 KR 1019970055517 A KR1019970055517 A KR 1019970055517A KR 19970055517 A KR19970055517 A KR 19970055517A KR 100312286 B1 KR100312286 B1 KR 100312286B1
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copper
acid
iron
alloy material
electrolytic polishing
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KR19990034039A (en
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문성수
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문성수
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/22Polishing of heavy metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/16Polishing
    • C25F3/22Polishing of heavy metals
    • C25F3/24Polishing of heavy metals of iron or steel
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F7/00Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
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  • Organic Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)

Abstract

PURPOSE: Provided is an electrolytic polishing composition for copper or copper alloy substrate and iron-nickel alloy substrate, which has superior polishing property without erosion attack to substrate to be polished. CONSTITUTION: The electrolytic polishing composition comprises (a) 50 to 900 g/L of phosphoric acid, (b) 10 to 400 g/L of methane sulfonate, (c) 10 to 200 g/L of one or more organic acid selected from Na2HPO4, K2HPO4, sulfuric acid, ammonium sulfate, citric acid, potassium or their mixtures, (d) 0.01 to 50 g/L of stabilizer selected from glycerine, ethyleneglycol, ethanol amine, triethylenetetramine, thioacetamide, thiourea, isopropyl alcohol or their mixtures, (e) and 0.001 to 5 g/L of surfactant selected from sodium lauryl sulfate, triethanolamine lauryl sulfate, naphthalene-1-sulfonic acid(alpha)potassium, N,N-diethyl-1,3-diaminopropane, beta-naphthol ethoxylate, polyethylene monocetyl ether or their mixtures.

Description

동 또는 동 합금 소재 및 철-니켈 합금 소재의 전해 연마 조성물{ELECTROLYTIC POLISHING COMPOSITION FOR COPPER OR COPPER ALLOY SUBSTRATE AND IRON-NICKEL ALLOY SUBSTRATE}ELECTROLYTIC POLISHING COMPOSITION FOR COPPER OR COPPER ALLOY SUBSTRATE AND IRON-NICKEL ALLOY SUBSTRATE}

본 발명은 동 또는 동 합금 소재 및 철-니켈 합금 소재를 전해에 의해 연마하는 전해 연마 조성물에 관한 것이다.The present invention relates to an electrolytic polishing composition for electropolishing copper or copper alloy materials and iron-nickel alloy materials.

일반적으로, 반도체 리드프레임, 인쇄회로기판 및 커넥터와 같은 동 또는 동 합금 소재 및 철-니켈 합금 소재로 된 전자산업분야 장치의 도금 공정은 다음과 같은 순서로 이루어진다.In general, the plating process of an electronics industry device made of copper or copper alloy material and iron-nickel alloy material such as semiconductor leadframe, printed circuit board and connector is performed in the following order.

전해탈지 단계 → 수세 단계 → 전해연마 단계 → 수세 단계 → 산 또는 알칼리 침적 단계 → 수세 단계 → 도금 단계Electrolytic degreasing step → washing step → electrolytic polishing step → washing step → acid or alkali deposition step → washing step → plating step

상기 단계 중 전해 연마 단계는 동 또는 동 합금 소재, 철-니켈 합금 소재에 도금하기 전에 전해에 의해 연마함으로써 소재의 표면을 광택이 있는 평활한 상태로 되게하여 우수하고 균일한 도금을 얻도록 하는 단계이다.In the electrolytic polishing step, electrolytic polishing before plating on copper or copper alloy material or iron-nickel alloy material, the surface of the material is polished and smoothed to obtain excellent and uniform plating. to be.

동 또는 동 합금 소재 및 철-니켈 합금 소재로 된 전자산업분야 장치, 예를들어 리드프레임을 프레스 가공하여 제조하면, 리드프레임상에 미세한 버(bur)가 생기는데, 이러한 상태에서 도금을 하면 도금의 밀착이 저하되고, 전류저항이 커지고 내식성이 저하되는 등의 문제점이 발생되어 반도체의 수명을 저하시킨다.Devices manufactured in the electronics industry, such as lead frames, made of copper or copper alloys and iron-nickel alloys, produce fine burs on the lead frames. The adhesion decreases, the current resistance increases, and the corrosion resistance falls, and the lifetime of a semiconductor falls.

이러한 문제점을 극복하기 위해 연마공정이 도입되어 많은 금속 전해 연마제가 개발되어 사용되고 있으나 대부분 인산과 황산을 포함하고 있기 때문에 표면을 평활하고 광택이 나게 하는 전류밀도 범위가 좁고, 동 또는 동 합금 소재 및 철-니켈 합금 소재의 연마가 잘 되지 않으며 전해로 연마되는 시간이 길어 생산 효율이 낮은 등의 문제점이 많다.In order to overcome this problem, many electrolytic abrasives have been developed and used, but most of them contain phosphoric acid and sulfuric acid, so that the current density range to make the surface smooth and glossy, and copper or copper alloy materials and iron -Nickel alloy material is not well polished and there are many problems such as low production efficiency due to long polishing time by electrolysis.

따라서, 본 발명의 목적은 동 또는 동 합금 소재 및 철-니켈 합금 소재를 전해연마하는데 있어 연마시간이 짧고, 소재에 침해를 가하지 않으면서 표면이 광택이 있는 평활한 상태가 되도록 하는 전해 연마 조성물을 제공하는 것이다.Accordingly, an object of the present invention is to provide an electropolishing composition which has a short polishing time in electropolishing copper or copper alloy material and iron-nickel alloy material, and makes the surface smooth and glossy without impairing the material. To provide.

상기 목적을 달성하기 위하여 본 발명에서는 인산 50 내지 900g/ℓ, 메탄설폰산 10 내지 400g/ℓ, 하나 이상의 유기산 10 내지 200g/ℓ, 안정제 0.01 내지 50g/ℓ 및 계면활성제 0.001 내지 5g/ℓ를 함유하는 전해 연마 조성물을 제공한다.In order to achieve the above object, the present invention contains 50 to 900 g / l phosphoric acid, 10 to 400 g / l methanesulfonic acid, 10 to 200 g / l at least one organic acid, 0.01 to 50 g / l stabilizer and 0.001 to 5 g / l surfactant. It provides an electrolytic polishing composition.

이하 본 발명에 대하여 보다 상세히 설명한다.Hereinafter, the present invention will be described in more detail.

본 발명의 전해 연마 조성물은 동 또는 동합금 소재, 및 합금 42(alloy 42)와 같은 철-니켈 합금 소재로 된, 반도체 리드프레임, 인쇄회로 기판, 커넥터 등의 전자장치에 사용할 수 있다. 또한, 릴투릴(reel to reel) 도금 장비에 사용하기 적합하다.The electropolishing compositions of the present invention can be used in electronic devices such as semiconductor leadframes, printed circuit boards, connectors, etc., made of copper or copper alloy materials, and iron-nickel alloy materials such as alloy 42. It is also suitable for use in reel to reel plating equipment.

본 발명의 전해 연마 조성물에는 인산이 50 내지 900g/ℓ, 바람직하게는 200 내지 800g/ℓ의 농도로 사용되며, 메탄설폰산이 10 내지 400g/ℓ, 바람직하게는 100 내지 300g/ℓ의 농도로 사용된다.In the electropolishing composition of the present invention, phosphoric acid is used at a concentration of 50 to 900 g / l, preferably 200 to 800 g / l, and methanesulfonic acid is used at a concentration of 10 to 400 g / l, preferably 100 to 300 g / l. do.

본 발명의 전해 연마 조성물에 사용할 수 있는 유기산의 공급원으로는 주로 인산염 계열, 황산염 계열, 구연산염 등의 염 또는 이들의 혼합물을 들 수 있으며, 구체적으로는 인산수소나트륨, 인산수소칼륨, 황산, 황산암모늄, 구연산, 구연산 칼륨 또는 이들의 혼합물이 바람직하다. 상기 유기산염은 10 내지 200g/ℓ, 바람직하게는 20 내지 150g/ℓ의 농도로 사용된다.Sources of organic acids that can be used in the electropolishing compositions of the present invention include, for example, salts such as phosphate series, sulfate series, citrate salts, or mixtures thereof, and specifically, sodium hydrogen phosphate, potassium hydrogen phosphate, sulfuric acid, and ammonium sulfate. , Citric acid, potassium citrate or mixtures thereof are preferred. The organic acid salt is used at a concentration of 10 to 200 g / l, preferably 20 to 150 g / l.

본 발명의 전해 연마 조성물에 사용할 수 있는 안정제로는 주로 글리세린 계열, 아민 계열, 아미드 계열, 이민 계열, 우레아 계열 등의 염 또는 이들의 혼합물을 들 수 있으며, 글리세린, 에틸렌글리콜, 에탄올아민, 트리에틸렌테트라아민, 티오아세트아미드, 티오우레아, 이소프로필알콜 또는 이들의 혼합물이 바람직하다. 상기 안정제는 0.01 내지 50g/ℓ, 바람직하게는 0.02 내지 30g/ℓ의 농도로 사용된다.Stabilizers that can be used in the electrolytic polishing composition of the present invention include mainly glycerin-based, amine-based, amide-based, imine-based, urea-based salts or mixtures thereof, and glycerin, ethylene glycol, ethanolamine, and triethylene. Preference is given to tetraamine, thioacetamide, thiourea, isopropyl alcohol or mixtures thereof. The stabilizer is used at a concentration of 0.01 to 50 g / l, preferably 0.02 to 30 g / l.

본 발명의 전해 연마 조성물에 사용할 수 있는 계면활성제로는 설폰산 계열, 에톡실 계열, 아미노 계열 또는 이들의 혼합물을 들 수 있으며, 라우릴황산나트륨, 트리에탄올아민 라우릴설페이트, 나프탈렌-1-설폰산(알파)나트륨, N,N-디에틸-1,3-디아미노프로판, 베타-나프톨에톡실레이트, 폴리에틸렌모노세틸에테르 또는 이들의 혼합물이 바람직하다. 상기 계면활성제는 0.001 내지 5g/ℓ, 바람직하게는 0.01 내지 3g/ℓ의 농도로 사용된다.Surfactants that can be used in the electrolytic polishing composition of the present invention include sulfonic acid series, ethoxyl series, amino series or mixtures thereof, and sodium lauryl sulfate, triethanolamine lauryl sulfate, naphthalene-1-sulfonic acid ( Alpha) sodium, N, N-diethyl-1,3-diaminopropane, beta-naphthol ethoxylate, polyethylene monocetyl ether or mixtures thereof are preferred. The surfactant is used at a concentration of 0.001 to 5 g / l, preferably 0.01 to 3 g / l.

상기 인산, 메탄설폰산, 유기산, 안정제 및 계면활성제를 증류수에 순차적으로 용해시켜 본 발명의 전해 연마 조성물을 제조한다.The phosphoric acid, methanesulfonic acid, organic acid, stabilizer and surfactant are sequentially dissolved in distilled water to prepare an electrolytic polishing composition of the present invention.

상기 제조된 본 발명의 전해 연마 조성물에, 양극(+)으로서의 연마할 소재, 즉, 동 또는 동 합금 소재 및 철-니켈 합금 소재, 및 음극(-)으로서의 백금, 스텐레스 스틸 망 또는 판을 담그고, 전류를 통해주어 소재가 연마되도록 한다. 이때, 온도는 20 내지 35℃, 인가 전압은 5 내지 10V가 바람직하다.In the electropolishing composition of the present invention prepared above, the material to be polished as the anode (+), that is, copper or copper alloy material and iron-nickel alloy material, and platinum, stainless steel mesh or plate as the negative electrode (-) are immersed, Current is applied to allow the material to be polished. At this time, the temperature is 20 to 35 ℃, the applied voltage is preferably 5 to 10V.

본 발명의 전해 연마 조성물은 다음과 같은 특징을 지닌다:The electropolishing composition of the present invention has the following characteristics:

(1) 동 또는 동 합금 소재 및 철-니켈 합금으로 된 소재에 침식을 전혀 주지 않으면서 버(bur)를 연마시켜 표면이 광택 있는 평활한 상태가 되도록 한다;(1) Burs are polished with no erosion to copper or copper alloys and iron-nickel alloys to give the surface a glossy smooth state;

(2) 연마시간이 20초 내지 1분으로, 기존의 20 내지 30분 보다 단축되어 효율적이고, 릴투릴 장비에 적합하다.(2) The polishing time is 20 seconds to 1 minute, which is shorter than the existing 20 to 30 minutes, which is efficient and suitable for reel to reel equipment.

이하 실시예를 통하여 본 발명을 더욱 상세히 설명한다. 단 본 발명의 범위가 하기 실시예만으로 한정되는 것은 아니다.The present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited only to the following examples.

실시예 1Example 1

하기 성분들을 순차적으로 증류수에 용해시켜, 전해 연마 조성물을 제조하였다.The following components were sequentially dissolved in distilled water to prepare an electrolytic polishing composition.

인산 760 g/ℓPhosphoric Acid 760 g / ℓ

메탄설폰산 120 g/ℓMethanesulfonic acid 120 g / l

황산암모늄 35 g/ℓAmmonium Sulfate 35 g / L

글리세린 20 g/ℓGlycerin 20 g / ℓ

에탄올아민 3 g/ℓEthanolamine 3 g / ℓ

트리에탄올아민라우릴설페이트 0.03 g/ℓTriethanolamine lauryl sulfate 0.03 g / L

상기 제조한 조성물을 전해질로 하여, 온도 28℃ 및 인가 전압 8V의 조건에서 소재를 40초간 연마시켰다. 그결과, 소재의 표면 광택성이 우수하고 평활한 상태를 유지하였다.Using the composition prepared above as an electrolyte, the material was polished for 40 seconds under conditions of a temperature of 28 ° C. and an applied voltage of 8V. As a result, the surface glossiness of the raw material was excellent and was kept smooth.

실시예 2Example 2

하기 성분들을 순차적으로 증류수에 용해시켜, 전해 연마 조성물을 제조하였다.The following components were sequentially dissolved in distilled water to prepare an electrolytic polishing composition.

인산 750 g/ℓPhosphoric Acid 750 g / ℓ

메탄설폰산 150 g/ℓ150 g / l methanesulfonic acid

구연산 35 g/ℓCitric Acid 35 g / ℓ

글리세린 25 g/ℓGlycerin 25 g / ℓ

트리에틸렌테트라아민 5 g/ℓTriethylenetetraamine 5 g / L

나프탈렌-1-설폰산(알파)나트륨 0.05 g/ℓNaphthalene-1-sulfonic acid (alpha) sodium 0.05 g / L

상기 제조한 조성물 전해질로 하여, 온도 28℃ 및 인가 전압 8V의 조건에서 소재를 40초간 연마시켰다. 그결과, 소재의 표면 광택성이 우수하고 평활한 상태를 유지하였다.Using the composition electrolyte prepared above, the material was polished for 40 seconds under conditions of a temperature of 28 ° C. and an applied voltage of 8V. As a result, the surface glossiness of the raw material was excellent and was kept smooth.

실시예 3Example 3

하기 성분들을 순차적으로 증류수에 용해시켜, 전해 연마 조성물을 제조하였다.The following components were sequentially dissolved in distilled water to prepare an electrolytic polishing composition.

인산 560 g/ℓPhosphoric Acid 560 g / ℓ

메탄설폰산 230 g/ℓMethanesulfonic acid 230 g / ℓ

인산수소나트륨 70 g/ℓSodium hydrogen phosphate 70 g / ℓ

티오아세트아미드 0.05 g/ℓThioacetamide 0.05 g / L

폴리에틸렌모노세틸에테르 0.02 g/ℓPolyethylene monocetyl ether 0.02 g / l

상기 제조한 조성물 전해질로 하여, 온도 28℃ 및 인가 전압 8V의 조건에서 소재를 40초간 연마시켰다. 그결과, 소재의 표면 광택성이 우수하고 평활한 상태를 유지하였다.Using the composition electrolyte prepared above, the material was polished for 40 seconds under conditions of a temperature of 28 ° C. and an applied voltage of 8V. As a result, the surface glossiness of the raw material was excellent and was kept smooth.

인산, 메탄설폰산, 하나 이상의 유기산, 안정제 및 계면활성제를 함유하는 본 발명의 전해 연마 조성물을 이용하여 동 또는 동 합금 소재 및 철-니켈 합금으로 된 소재를 전해 연마시키면, 침식은 전혀 나타내지 않으면서 광택이 있는 평활한 상태가 되게 하고, 연마시간이 종래 연마 조성물을 사용한 경우 보다 단축되어 효율적이다.Electrolytic polishing of copper or copper alloy materials and iron-nickel alloys using the electrolytic polishing compositions of the present invention containing phosphoric acid, methanesulfonic acid, one or more organic acids, stabilizers and surfactants provides no erosion at all. The polished smooth state is achieved, and the polishing time is shorter and more efficient than when the conventional polishing composition is used.

Claims (7)

인산 50 내지 900g/ℓ, 메탄설폰산 10 내지 400g/ℓ, 하나 이상의 유기산 10 내지 200g/ℓ, 안정제 0.01 내지 50g/ℓ 및 계면활성제 0.001 내지 5g/ℓ를 함유하는 전해 연마 조성물.An electrolytic polishing composition containing 50 to 900 g / l phosphoric acid, 10 to 400 g / l methanesulfonic acid, 10 to 200 g / l at least one organic acid, 0.01 to 50 g / l stabilizer and 0.001 to 5 g / l surfactant. 제 1 항에 있어서,The method of claim 1, 상기 유기산이 인산수소나트륨, 인산수소칼륨, 황산, 황산암모늄, 구연산, 구연산 칼륨 또는 이들의 혼합물인 것을 특징으로 하는 조성물.The organic acid is sodium hydrogen phosphate, potassium hydrogen phosphate, sulfuric acid, ammonium sulfate, citric acid, potassium citrate or a mixture thereof. 제 1 항에 있어서,The method of claim 1, 상기 안정제가 글리세린, 에틸렌글리콜, 에탄올아민, 트리에틸렌테트라아민, 티오아세트아미드, 티오우레아, 이소프로필알콜 또는 이들의 혼합물인 것을 특징으로 하는 조성물.The stabilizer is glycerin, ethylene glycol, ethanolamine, triethylenetetraamine, thioacetamide, thiourea, isopropyl alcohol or a mixture thereof. 제 1 항에 있어서,The method of claim 1, 상기 계면활성제가 라우릴황산나트륨, 트리에탄올아민 라우릴설페이트, 나프탈렌-1-설폰산(알파)나트륨, N,N-디에틸-1,3-디아미노프로판, 베타-나프톨에톡실레이트, 폴리에틸렌모노세틸에테르 또는 이들의 혼합물인 것을 특징으로 하는 조성물.The surfactant is sodium lauryl sulfate, triethanolamine lauryl sulfate, sodium naphthalene-1-sulfonic acid (alpha), N, N-diethyl-1,3-diaminopropane, beta-naphthol ethoxylate, polyethylene monocetyl Ether or mixtures thereof. 제 1 항의 조성물에, 양극(+)으로서의 동 또는 동 합금 소재 또는 철-니켈 합금 소재, 및 음극(-)으로서의 백금 또는 스텐레스 스틸 망 또는 판을 담그고, 전류를 통해주어 상기 소재가 연마되도록 하는 단계를 포함하는, 동 또는 동 합금 소재 또는 철-니켈 합금 소재의 전해 연마 방법.Dipping a copper or copper alloy material or an iron-nickel alloy material as an anode (+), and a platinum or stainless steel mesh or plate as an anode (-), and subjecting it to current to polish the material. Electrolytic polishing method of copper or copper alloy material or iron-nickel alloy material comprising a. 제 5 항에 있어서,The method of claim 5, 동 또는 동 도금합금 소재 및 철-니켈 합금 소재가 반도체 리드프레임, 커넥터 또는 인쇄회로기판인 것을 특징으로 하는 방법.Copper or copper plating alloy material and iron-nickel alloy material is a semiconductor lead frame, connector or printed circuit board. 제 5 항에 있어서,The method of claim 5, 릴투릴(reel to reel) 장비를 사용하는 것을 특징으로 하는 방법.Method using reel to reel equipment.
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