KR100309728B1 - Method for working inside of chemical tank - Google Patents
Method for working inside of chemical tank Download PDFInfo
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- KR100309728B1 KR100309728B1 KR1020010026328A KR20010026328A KR100309728B1 KR 100309728 B1 KR100309728 B1 KR 100309728B1 KR 1020010026328 A KR1020010026328 A KR 1020010026328A KR 20010026328 A KR20010026328 A KR 20010026328A KR 100309728 B1 KR100309728 B1 KR 100309728B1
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- South Korea
- Prior art keywords
- chemical tank
- wall
- solution
- electrolytic
- electrolytic polishing
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- 239000000126 substance Substances 0.000 title claims abstract description 75
- 238000000034 method Methods 0.000 title abstract description 13
- 238000005498 polishing Methods 0.000 claims abstract description 42
- 239000000243 solution Substances 0.000 claims abstract description 19
- 238000002161 passivation Methods 0.000 claims abstract description 14
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 12
- 238000003672 processing method Methods 0.000 claims abstract description 10
- 239000008151 electrolyte solution Substances 0.000 claims abstract description 9
- 238000006386 neutralization reaction Methods 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 8
- 239000002253 acid Substances 0.000 claims abstract description 6
- 230000003472 neutralizing effect Effects 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010949 copper Substances 0.000 claims abstract description 4
- 235000011121 sodium hydroxide Nutrition 0.000 claims abstract description 4
- 238000007517 polishing process Methods 0.000 claims abstract 2
- 239000002184 metal Substances 0.000 abstract description 11
- 229910052751 metal Inorganic materials 0.000 abstract description 11
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 229920000642 polymer Polymers 0.000 abstract description 7
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 238000003786 synthesis reaction Methods 0.000 abstract description 7
- 238000004090 dissolution Methods 0.000 abstract description 5
- 239000012847 fine chemical Substances 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010828 elution Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003814 drug Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/102—Pretreatment of metallic substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
- B05D7/14—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/08—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases only one element being applied
- C23C8/10—Oxidising
- C23C8/12—Oxidising using elemental oxygen or ozone
- C23C8/14—Oxidising of ferrous surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2202/00—Metallic substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D2301/00—Inorganic additives or organic salts thereof
- B05D2301/30—Acids
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Wood Science & Technology (AREA)
- General Chemical & Material Sciences (AREA)
- ing And Chemical Polishing (AREA)
- Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
Abstract
본 발명은 약품탱크내벽의 가공방법에 관한 것으로, 더욱 상세하게는 제약, 정밀화학에서 고분자합성시 사용되는 약품탱크나, 반도체용 고순도약품을 운반 및 저장하는 약품탱크의 내벽에 전해연마 후, 질산을 이용하여 산화피막을 형성시킴으로써 약품탱크의 내벽으로부터 금속성분의 용출을 최소화하여 저장약품의 순도를 그대로 유지시킬 수 있는 약품탱크내벽의 가공방법을 제공함에 그 목적이 있다.The present invention relates to a method for processing an inner wall of a chemical tank, and more particularly, after electrolytic polishing on the inner wall of a chemical tank used for polymer synthesis in pharmaceutical and fine chemicals or a chemical tank for transporting and storing high purity chemicals for semiconductors, It is an object of the present invention to provide a method for processing an inner wall of a chemical tank that can maintain the purity of the stored chemical by minimizing the dissolution of metal components from the inner wall of the chemical tank by forming an oxide film using the.
그리고, 상기 목적을 달성하기 위하여 본 발명은 약품탱크내벽(1-1)을 버프연마를 이용하여 가공하는 기계적연마단계(S1)와; 상기 기계적연마단계(S1)에서 버프연마된 상기 약품탱크내벽(1-1)을 전해용액(3)와 순동의 전해연마용지그(2)를 이용하여 전해연마가공을 하게 되는 전해연마단계(S2)와; 상기 전해연마단계(S2)를 거친 상기 약품탱크내벽(1-1)에 20%의 질산용액인 부동태용액(26)을 반응시켜 산화피막층(25)을 형성하는 부동태공정단계(S3)와; 상기 부동태공정단계(S3)를 거치면서 상기 약품탱크내벽(1-1)에 잔존할 수 있는 미량의 산성분을 2%의 가성소다용액인 중화용액으로 중화처리하는 중화공정단계(S4);로 구성되는 것을 특징으로 하는 약품탱크내벽의 가공방법을 제공하게 된다.And, in order to achieve the above object, the present invention provides a mechanical polishing step (S1) for processing the chemical tank inner wall (1-1) using buff polishing; Electrolytic polishing step (S2) to the electrolytic polishing process using the electrolytic solution (3) and pure copper electrolytic polishing jig (2) to the chemical tank inner wall (1-1) buff polishing in the mechanical polishing step (S1) )Wow; A passivation step (S3) of forming an oxide film layer (25) by reacting the passivation solution (26), which is 20% nitric acid solution, to the chemical tank inner wall (1-1) after the electrolytic polishing step (S2); A neutralization step (S4) of neutralizing a small amount of acid component remaining on the inner wall of the chemical tank (1-1) with a neutralization solution of 2% caustic soda while passing through the passivation step (S3); It provides a processing method of the inner wall of the chemical tank, characterized in that configured.
Description
본 발명은 약품탱크내벽의 가공방법에 관한 것으로, 더욱 상세하게는 제약, 정밀화학에서 고분자합성시 사용되는 약품탱크나, 반도체용 고순도약품을 운반 및 저장하는 약품탱크의 내벽에 전해연마 후, 질산을 이용하여 산화피막을 형성시키는 약품탱크내벽의 가공방법에 관한 것이다.The present invention relates to a method for processing an inner wall of a chemical tank, and more particularly, after electrolytic polishing on the inner wall of a chemical tank used for polymer synthesis in pharmaceutical and fine chemicals or a chemical tank for transporting and storing high purity chemicals for semiconductors, It relates to a processing method of the inner wall of the chemical tank to form an oxide film by using.
일반적으로, 제약 및 정밀화학에서 고분자합성시 사용되거나, 반도체용 고순도약품을 운반 및 저장시 사용되는 약품탱크(또는 약품드럼)는 그 내벽을 기계적인인 연마나, 산세정, 전해연마 등으로 마감처리하게 된다.In general, chemical tanks (or chemical drums) used in the synthesis of polymers in pharmaceuticals and fine chemistry, or used for transporting and storing high-purity chemicals for semiconductors, are finished with mechanical polishing, pickling, electropolishing, etc. Will be processed.
그러나, 이러한 약품탱크의 내벽은 평활하지 못해 찌꺼기 등이 흡착되거나, 금속성분이 용출되면서 고분자합성시 반응수율저하 및 이상반응유도 등으로 품질저하 등을 초래하거나, 저장된 반도체용 고순도약품에 혼입되어 반도체의 관련제품 제조시 불량율을 증가시키게 된다.However, the inner wall of such a chemical tank is not smooth, so that residues are adsorbed, or metal components are eluted, resulting in deterioration of quality due to lower reaction yield and abnormal reaction induction during polymer synthesis, or mixed in high purity chemicals for semiconductors stored therein. Increase the defective rate in manufacturing related products.
따라서, 약품탱크내에 저장되어 있는 반도체용 고순도약품은 사용전에 반드시 세정하는 별도 작업을 거치게 되고, 이로써 세정기간이 과다하게 소요되면서 고가인 고순도약품의 소비가 낭비되는 등 비효율적, 비경제적인 문제를 초래하게 된다.Therefore, high-purity chemicals for semiconductors stored in chemical tanks have to be cleaned separately before use, which leads to inefficient and uneconomical problems such as excessive consumption of high-purity chemicals and wasted consumption. do.
본 발명은 제약, 정밀화학에서 고분자합성시 사용되는 약품탱크나, 반도체용 고순도약품을 운반 및 저장하는 약품탱크의 내벽에 전해연마 후, 질산을 이용하여 산화피막을 형성시킴으로써 약품탱크의 내벽으로부터 금속성분의 용출을 최소화하여 저장약품의 순도를 그대로 유지시킬 수 있는 약품탱크내벽의 가공방법을 제공함에 그 목적이 있다.According to the present invention, an electrolytic polishing is performed on the inner wall of a chemical tank used for polymer synthesis in pharmaceuticals and fine chemistry, or a chemical tank for transporting and storing high purity chemicals for semiconductors, followed by forming an oxide film using nitric acid to form a metal from the inner wall of the chemical tank. It is an object of the present invention to provide a method for processing an inner wall of a chemical tank which can minimize the dissolution of components to maintain the purity of the stored chemical.
도1a,b는 본 발명에 따른 약품탱크내벽의 가공방법중 전해연마작업을 나타내는 모식도,Figure 1a, b is a schematic diagram showing the electropolishing operation of the processing method of the inner wall of the chemical tank according to the present invention,
도2a는 본 발명에 따른 약품탱크내벽의 가공방법중 전해연마에 의한 가공상태를 나타내는 부분단면도,Figure 2a is a partial cross-sectional view showing a processing state by electropolishing in the processing method of the inner wall of the chemical tank according to the present invention;
도2b는 본 발명에 따른 가공방법에 의해 약품탱크의 내벽에 산화피막층이 형성된 상태를 나타내는 부분단면도,Figure 2b is a partial cross-sectional view showing a state in which an oxide film layer is formed on the inner wall of the chemical tank by the processing method according to the present invention;
도3a,b는 종래예와 발명예에 의한 용출시간과 금속용출량의 상관관계를 나타내는 그래프,3A and 3B are graphs showing the correlation between the elution time and the metal elution amount according to the prior art and the invention example;
도4는 본 발명에 따른 약품탱크내벽의 가공방법을 나타내는 순서도이다.Figure 4 is a flow chart showing a processing method of the inner wall of the chemical tank according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
1: 약품탱크 1-1: 약품탱크의 내벽 2: 전해연마용 지그 3: 전해용액 10: 연결관 10-1: 연결관의 내벽 11: 전해연마용 지그 12: 절연부재 20: 용해금속층 25: 산화피막층 26: 부동태용액 S1: 기계적연마단계 S2: 전해연마단계 S3: 부동태공정단계 S4: 중화공정단계DESCRIPTION OF SYMBOLS 1 Chemical tank 1-1: Inner wall of chemical tank 2: Jig for electrolytic polishing 3: Electrolytic solution 10: Connector 10-1: Inner wall of connector 11: Jig for electrolytic polishing 12: Insulation member 20: Molten metal layer 25: Anodized layer 26: Passive solution S1: Mechanical polishing step S2: Electrolytic polishing step S3: Passive process step S4: Neutralization step
상기한 목적을 달성하기 위하여 본 발명은 약품탱크내벽을 버프연마를 이용하여 가공하는 기계적연마단계와; 상기 기계적연마단계에서 버프연마된 상기 약품탱크내벽을 전해용액와 순동의 전해연마용지그를 이용하여 전해연마가공을 하게 되는 전해연마단계와; 상기 전해연마단계를 거친 상기 약품탱크내벽에 20%의 질산용액인 부동태용액을 반응시켜 산화피막층을 형성하는 부동태공정단계와; 상기 부동태공정단계를 거치면서 상기 약품탱크내벽에 잔존할 수 있는 미량의 산성분을 2%의 가성소다용액인 중화용액으로 중화처리하는 중화공정단계;로 구성되는 것을 특징으로 하는 약품탱크내벽의 가공방법을 제공하게 된다.In order to achieve the above object, the present invention includes a mechanical polishing step of processing the chemical tank inner wall using buff polishing; An electrolytic polishing step of electrolytic polishing using the electrolytic polishing jig of electrolytic solution and pure copper on the inner wall of the chemical tank buffed in the mechanical polishing step; A passivation process step of forming an oxide film layer by reacting a passivation solution of 20% nitric acid solution on the inner wall of the chemical tank after the electrolytic polishing step; Neutralization process step of neutralizing a small amount of acid components remaining on the inner wall of the chemical tank with a neutralizing solution of 2% caustic soda solution through the passivation process step; processing of the chemical tank inner wall It provides a way.
도면을 참조하여 본 발명의 바람직한 실시예를 상세히 설명하기로 한다.With reference to the drawings will be described a preferred embodiment of the present invention;
도1a,b는 본 발명에 따른 약품탱크내벽의 가공방법중 전해연마작업을 나타내는 모식도이고, 도2a는 본 발명에 따른 약품탱크내벽의 가공방법중 전해연마에 의한 가공상태를 나타내는 부분단면도이며, 도2b는 본 발명에 따른 가공방법에 의해 약품탱크의 내벽에 산화피막층이 형성된 상태를 나타내는 부분단면도이고, 도3a,b는 종래예와 발명예에 의한 용출시간과 금속용출량의 상관관계를 나타내는 그래프이며, 도4는 본 발명에 따른 약품탱크내벽의 가공방법을 나타내는 순서도이다.Figure 1a, b is a schematic diagram showing the electropolishing operation of the chemical tank inner wall processing method according to the present invention, Figure 2a is a partial cross-sectional view showing the processing state by the electrolytic polishing of the processing method of the chemical tank inner wall according to the present invention, Figure 2b is a partial cross-sectional view showing a state in which the oxide film layer formed on the inner wall of the chemical tank by the processing method according to the present invention, Figure 3a, b is a graph showing the correlation between the dissolution time and the metal dissolution amount according to the prior art and the invention example 4 is a flowchart illustrating a method of processing an inner wall of a chemical tank according to the present invention.
본 발명에 따른 기계적 연마단계(S1)에서는 약품탱크(1)의 내벽(1-1)을 버프연마(Buffing)를 하여 거울면과 같이 평활하게 정밀 가공을 하게 된다.In the mechanical polishing step (S1) according to the present invention, the inner wall 1-1 of the chemical tank 1 is subjected to buffing to smoothly process precision like a mirror surface.
그리고, 전해연마단계(S2)에서는 약품탱크내벽(1-1)의 미소돌기부분을 용해하는 전해연마가공을 하게 된다.Then, in the electrolytic polishing step (S2), the electrolytic polishing processing for dissolving the minute projections of the inner wall of the chemical tank (1-1).
여기서, 버프연마된 약품탱크(1)의 내벽(1-1)은 전자현미경으로 관찰하게 되면 미세하게 돌출되어 있음을 확인할 수 있다.Here, it can be seen that the inner wall 1-1 of the buff polished chemical tank 1 protrudes finely when observed with an electron microscope.
이때, 약품탱크(1)의 내벽(1-1)에 대한 전해연마작업은 약품탱크내에 전해용액(3)을 충전하고, 가공물인 약품탱크에 양극을 연결하면서 전해연마용 지그(2)에 음극을 연결하여 전류를 통하게 된다.At this time, the electrolytic polishing operation on the inner wall (1-1) of the chemical tank (1) is filled with the electrolytic solution (3) in the chemical tank, and the negative electrode to the electrolytic polishing jig (2) while connecting the positive electrode to the chemical tank as a workpiece Connect the current through.
이렇게할 경우, 도2a에 도시한 바와 같이 양극(+)의 약품탱크내벽(1-1)은 용해되어 전해연마되고, 약품탱크의 내벽으로부터 석출된 용해금속층(20)은 음극(-)의 전해연마용 지그(2)에 전기도금된다.In this case, as illustrated in FIG. 2A, the chemical tank inner wall 1-1 of the positive electrode (+) is melted and polished, and the molten metal layer 20 deposited from the inner wall of the chemical tank is electrolytically of the negative electrode (−). The polishing jig 2 is electroplated.
그리고, 강산의 전해용액(3)은 황산 20%, 인산 77%, 무수크롬산 3%로 조성되어 있고, 전해연마용 지그(2)는 순동의 재질로 구성되어 있다.The strong acid electrolytic solution 3 is composed of sulfuric acid 20%, phosphoric acid 77% and chromic anhydride 3%, and the electrolytic polishing jig 2 is made of pure copper.
특히, 약품탱크(1)의 내부와 외부를 연결하는 노즐 등의 연결관(10)은 그 내벽(10-1)을 전해연마할 경우 관내에 강산의 전해용액(3)을 충전하고, 가공물인 관에 양극을 연결하면서 전해연마용 지그(11)에 음극을 연결하여 전류를 통하게 된다.In particular, the connecting pipe 10, such as a nozzle connecting the inside and the outside of the chemical tank 1, when the inner wall 10-1 is electropolished, fills the pipe with the electrolytic solution 3 of strong acid, The anode is connected to the tube while the cathode is connected to the electrolytic polishing jig 11 to pass current.
이때, 양극(+)의 관내벽(10-1)은 용해되어 전해연마되고, 관의 내벽으로부터 석출된 금속은 전해용액(3)으로 용출된다.At this time, the inner wall 10-1 of the anode (+) is dissolved and electropolished, and the metal precipitated from the inner wall of the tube is eluted with the electrolytic solution 3.
여기서, 전해연마용 지그(11)에는 다수개의 절연부재(12)가 부착되어 있는데, 이 절연부재는 전해연마용 지그를 연결관(10)내로 삽입시 관내벽(10-1)과의 접촉을 차단하고, 전해연마용 지그와 관내벽의 합선을 방지하는 기능을 수행하게 된다.Here, a plurality of insulating members 12 are attached to the electropolishing jig 11, which contacts the inner wall 10-1 when the electropolishing jig is inserted into the connecting pipe 10. It blocks and prevents a short circuit between the electrolytic polishing jig and the inner wall of the tube.
따라서, 절연부재(12)는 절연성이 우수하고, 고온의 전해용액내에서 견딜 수 있도록 내열성이 우수한 순수테프론재질로 가공하는 것이 바람직하다.Accordingly, the insulating member 12 is preferably processed into a pure teflon material having excellent insulation and excellent heat resistance so that it can withstand a high temperature of the electrolytic solution.
한편, 부동태공정단계(S3)에서는 버핑연마단계(S1)와 전해연마단계(S2)를 차례로 거치면서 평활하게 가공된 약품탱크(1)의 내벽(1-1)에 20%의 질산용액인 부동태용액(26)을 반응시켜 산화피막층(25)을 형성함으로써 부동태처리를 하게 된다.On the other hand, in the passivation process step (S3) pass through the buffing polishing step (S1) and electrolytic polishing step (S2) in turn passivating 20% nitric acid solution to the inner wall (1-1) of the smoothly processed chemical tank (1) The solution 26 is reacted to form an oxide layer 25 to passivate.
여기서, 부동태용액(26)은 약품탱크(1)의 내부용적의 1%정도에 해당되는 양을 사용하게 되고, 질산의 농도가 너무 진하면 약품탱크 또는 연결관(10)의 내벽(1-1,10-1)을 부식시킬 우려가 있고 질산의 농도가 너무 묽으면 부동태처리효과가 반감되는 문제가 있어 20%의 질산용액이 가장 바람직하다.Here, the passivation solution 26 is used in an amount corresponding to about 1% of the internal volume of the chemical tank (1), if the concentration of nitric acid is too high, the inner wall (1-1, 10-1) may be corroded and if the concentration of nitric acid is too thin, the passivation effect may be halved. Thus, 20% nitric acid solution is most preferred.
또한, 약품탱크(1) 또는 연결관(10)의 내벽(1-1,10-1)에 골고루 살포된 부동태용액(26)은 살포량의 90%정도를 살포직후에 곧바로 진공장치를 이용하여 회수하게 되고, 대기중에서 10분이상 반응시키게 되면 약품탱크(1) 또는 연결관(10)의 내벽(1-1,10-1)에 아주 미세한 두께의 산화피막층(25)을 형성하게 된다.In addition, the passivating solution 26 evenly sprayed on the inner walls (1-1, 10-1) of the chemical tank 1 or the connecting pipe 10 is recovered by using a vacuum device immediately after spraying about 90% of the spraying amount. When the reaction is performed for 10 minutes or more in the air, an oxide film layer 25 having a very fine thickness is formed on the inner walls 1-1 and 10-1 of the chemical tank 1 or the connection pipe 10.
이때, 약품탱크내벽(1-1)에 산화피막층(25)을 형성시켜 부동태처리를 하게 되면 약품탱크의 내벽은 화학적 또는 전기화학적으로 용해 또는 반응이 정지되면서 금속이온성분의 용출이 억제되는 등의 금속의 특수한 표면상태를 유지하게 된다.At this time, if the passivation treatment is performed by forming an oxide film layer 25 on the inner wall of the chemical tank 1-1, the inner wall of the chemical tank is chemically or electrochemically dissolved or the reaction is stopped and the elution of the metal ion component is suppressed. Maintain a special surface condition of the metal.
그리고, 중화공정단계(S4)는 전해연마단계(S2)와 부동태공정단계(S3)를 거치면서 약품탱크내벽(1-1)에 잔존할 수 있는 미량의 산성분을 2%의 가성소다용액인중화용액으로 중화처리하는 공정이다.In addition, the neutralization step (S4) is a caustic soda solution containing 2% of a small amount of acid components remaining in the chemical tank inner wall (1-1) through the electrolytic polishing step (S2) and the passivation step (S3). Neutralization process with neutralization solution.
여기서, 약품탱크(1)내에 잔존하는 중화용액은 마지막 세정작업시 모두 제거시키게 된다.Here, the neutralizing solution remaining in the chemical tank 1 is removed during the last cleaning operation.
특히, 도3a,b에서 알 수 있듯이 본 발명에 의해 약품탱크(1)의 내벽(1-1)에 산화피막층(25)을 형성할 경우 금속성분의 용출을 종전보다 30%이상 감소시킬 수 있게 된다.In particular, as can be seen in Figures 3a, b to form an oxide film layer 25 on the inner wall (1-1) of the chemical tank (1) by the present invention to reduce the elution of metal components by 30% or more than before do.
본 발명은 제약, 정밀화학에서 고분자합성시 사용되거나, 반도체용 고순도약품을 운반 및 저장하는 약품탱크의 내벽을 산화피막에 의한 부동태상태로 처리함으로써 약품탱크의 내벽으로부터 금속성분의 용출을 최소화하고, 이로써 저장약품의 순도를 그대로 유지시키면서 고분자합성시 품질향상을 도모하며, 더욱이 세정시 고가인의 고순도약품의 사용량을 줄일 수 있으면서 세정기간을 단축할 수 있는 효과를 제공하게 된다.The present invention minimizes the dissolution of metal components from the inner wall of the chemical tank by treating the inner wall of the chemical tank used in the synthesis of polymers in pharmaceutical, fine chemistry, or transporting and storing high purity chemicals for semiconductors in a passive state by an oxide film, This improves the quality of the polymer synthesis while maintaining the purity of the storage chemicals, and further reduces the amount of high-purity high-purity chemicals used for cleaning, while providing an effect of shortening the cleaning period.
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| KR1020010026328A KR100309728B1 (en) | 1999-03-24 | 2001-05-15 | Method for working inside of chemical tank |
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| KR2019990004754U KR19990033223U (en) | 1999-03-24 | 1999-03-24 | Formation of oxidized film after having Electro-Polishing process on the interior surface of high-purity chemicals stroage tank(drum). |
| KR1020010026328A KR100309728B1 (en) | 1999-03-24 | 2001-05-15 | Method for working inside of chemical tank |
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| KR101378969B1 (en) * | 2012-04-13 | 2014-03-27 | 주식회사 마스코 | Electrolytic polished water tank for a water purifier and method for manufacturing the same |
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| KR101959760B1 (en) * | 2017-02-23 | 2019-03-19 | 피에스테크놀러지(주) | Method for cleaning a process chamber by using an electropolishing |
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