KR100300678B1 - Level measuring aparatus of chemical bath for water making semiconductor - Google Patents
Level measuring aparatus of chemical bath for water making semiconductor Download PDFInfo
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- KR100300678B1 KR100300678B1 KR1019990028765A KR19990028765A KR100300678B1 KR 100300678 B1 KR100300678 B1 KR 100300678B1 KR 1019990028765 A KR1019990028765 A KR 1019990028765A KR 19990028765 A KR19990028765 A KR 19990028765A KR 100300678 B1 KR100300678 B1 KR 100300678B1
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- chemical liquid
- level
- wafer
- storage tank
- gas
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- 239000000126 substance Substances 0.000 title claims abstract description 73
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title description 2
- 239000007788 liquid Substances 0.000 claims abstract description 60
- 238000003860 storage Methods 0.000 claims abstract description 29
- 230000001681 protective effect Effects 0.000 claims abstract description 25
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 239000003814 drug Substances 0.000 abstract description 2
- 229940079593 drug Drugs 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000002904 solvent Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 20
- 238000009434 installation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
Abstract
본 발명은 웨이퍼의 기판상에 잠상(潛像)으로 금속막 패턴을 형성하는 과정 및 웨이퍼를 세정하는 과정에서 사용되는 세정액이나 코팅용제 등의 약액을 약액저장조에 공급할 때 공급량을 정확하게 측정할 수 있는 반도체 웨이퍼 제조용 약액용기의 레벨측정장치에 관한 것으로서, 반도체 웨이퍼를 제조하는 약액저장조의 일측에 설치되어 N2가스를 연속적으로 배출하면서 약액의 레벨을 측정하는 레벨센서와 상기 N2가스에 의해서 발생되는 기포가 웨이퍼측으로 이동하는 것을 방지하기 위하여 레벨센서의 외측에 보호관이 설치된 것에 있어서, 상기 N2가스에 의해서 발생되는 기포의 크기보다 작은 직경을 갖는 통공을 보호관의 둘레면에 다수개 형성하여서 된것이다.The present invention can accurately measure the supply amount when supplying a chemical liquid such as a cleaning liquid or a coating solvent used in the process of forming a metal film pattern as a latent image on a wafer substrate and cleaning the wafer. relates to a level measurement apparatus for producing a semiconductor wafer liquid container is provided on one side of the drug solution storage tank for producing the semiconductor wafer generated by the N 2 gas and a level sensor for measuring the level of the chemical liquid while discharging the N 2 gas continuously In order to prevent bubbles from moving to the wafer side, protective tubes are provided on the outside of the level sensor, and a plurality of through holes having a diameter smaller than the size of the bubbles generated by the N 2 gas are formed on the peripheral surface of the protective tubes. .
Description
본 발명은 반도체 웨이퍼 제조용 약액용기의 레벨측정장치에 관한 것으로서,더욱 상세하게는 웨이퍼의 기판상에 잠상(潛像)으로 금속막 패턴을 형성하는 과정 및 웨이퍼를 세정하는 과정에서 사용되는 세정액이나 코팅용제 등의 약액을 약액저장조에 공급할 때 공급량을 정확하게 측정할 수 있는 반도체 웨이퍼 제조용 약액용기의 레벨측정장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for measuring a level of a chemical container for semiconductor wafer manufacturing. More particularly, the present invention relates to a cleaning liquid or coating for forming a metal film pattern as a latent image on a substrate of a wafer and cleaning the wafer. The present invention relates to a level measuring device for a chemical liquid container for manufacturing a semiconductor wafer, which can accurately measure a supply amount when supplying a chemical liquid such as a solvent to a chemical liquid storage tank.
일반적으로, 반도체 웨이퍼의 제조공정에 사용되는 약액은 가공조건 및 특성에 따라 하나의 공정에도 화학적 성질이 다른 여러 종류의 약액을 이용하고 있으며 이때에는 약액저장조에 담겨진 약액과 웨이퍼가 반응될 수 있도록 다수의 웨이퍼를 약액저장조의 내부에 일정시간동안 삽입시키고 반응이 완료된 웨이퍼는 세정수가 담겨진 또다른 약액저장조에서 세척을 하며 상술한 바와같은 공정을 반복하여 제조하고 있다.In general, chemical liquids used in the manufacturing process of semiconductor wafers use various kinds of chemical liquids with different chemical properties in one process depending on processing conditions and characteristics, and in this case, a plurality of chemical liquids in a chemical storage tank and a wafer may react. The wafer is inserted into the chemical storage tank for a predetermined time, and the reaction is completed, the wafer is washed in another chemical storage tank containing the washing water and is repeatedly manufactured as described above.
상기와 같이 웨이퍼를 제조하기 위해서 약액저장조에 공급되는 약액은 일정한 높이를 유지하여야 하며 이때에는 약액저장조의 일측에 약액의 레벨을 측정할 수 있는 측정장치를 설치하고 있다.In order to manufacture the wafer as described above, the chemical liquid supplied to the chemical storage tank must be maintained at a constant height. At this time, a measuring device for measuring the level of the chemical liquid is installed on one side of the chemical storage tank.
도 1은 종래의 레벨측정장치가 설치된 반도체 웨이퍼 제조용 약액용기의 단면도로서, N2가스가 연속적으로 공급되는 레벨센서(2)를 약액저장조(1)의 일측에 설치하되 상기 레벨센서(2)의 하부면은 약액저장조(1)의 저면에 근접되어 있다.1 is a cross-sectional view of a chemical liquid container for manufacturing a semiconductor wafer in which a conventional level measuring device is installed, and a level sensor 2 continuously supplied with N 2 gas is provided on one side of the chemical liquid storage tank 1, but the level sensor 2 The lower surface is close to the bottom of the chemical storage tank (1).
한편 상기 레벨센서(2)의 외측에는 연속적으로 공급되는 N2에서 발생하는 기포가 약액저장조(1)에 담겨진 웨이퍼(W)측으로 이동하는 것을 방지하기 위한 보호관(3)이 설치되어 있다.On the other hand, the outer side of the level sensor 2 is provided with a protective tube (3) for preventing the bubbles generated in the continuously supplied N 2 to move to the wafer (W) side contained in the chemical liquid storage tank (1).
따라서 약액저장조(1)의 내부에 약액을 공급하면 약액저장조(1)의 하부로부터 높이가 상승되고 이 약액은 보호관(3)의 하부를 통하여 상기 보호관(3)의 내부로 유입되어 약액저장조(1)에 공급된 약액과 보호관(3)의 내부로 유입된 약액의 높이는 동일하게 유지되므로 상기 약액저장조(1)에 공급된 약액의 레벨을 측정할 때에는 레벨센서(2)를 통하여 N2가스를 연속적을 공급하면서 상기 레벨센서(2)에 의해서 측정되는 측정값으로 약액의 공급량을 결정하는 것이다.Therefore, when the chemical liquid is supplied into the chemical storage tank 1, the height is increased from the lower portion of the chemical storage tank 1, and the chemical liquid flows into the protective tube 3 through the lower portion of the protective tube 3 to store the chemical liquid storage tank 1. The level of the chemical liquid supplied to the chemical liquid supplied to the inside of the protective tube (3) is kept the same, so that when measuring the level of the chemical liquid supplied to the chemical liquid storage tank (1) through the N 2 gas continuously through the level sensor (2) The supply amount of the chemical liquid is determined by the measured value measured by the level sensor 2 while supplying.
그러나 종래에는 약액저장조(1)에 공급된 약액은 보호관(3)의 하부를 통하여 보호관(3)으로 유입되므로 고농도의 약액을 약액저장조(1)에 공급할 때에는 레벨센서(2)를 통하여 공급되는 N2가스에서 발생되는 기포가 상승하지 못하게 되므로 상기 기포에 의해서 보호관(3)내부로 유입된 약액의 레벨이 약액저장조(1)에 공급된 약액의 높이보다 상승되므로 약액저장조(1)의 레벨을 정확하게 측정하지 못하게 되는 문제점이 있었다.However, in the related art, the chemical liquid supplied to the chemical liquid storage tank 1 flows into the protective tube 3 through the lower portion of the protective tube 3, so that when supplying a high concentration of the chemical liquid to the chemical liquid storage tank 1, the N supplied through the level sensor 2 is supplied. 2 Since the bubbles generated in the gas cannot rise, the level of the chemical liquid introduced into the protective tube 3 by the bubbles rises higher than the height of the chemical liquid supplied to the chemical liquid storage tank 1 so that the level of the chemical liquid storage tank 1 can be accurately adjusted. There was a problem that can not be measured.
본 발명은 위와 같은 종래의 문제점을 해결하기 위하여 발명한 것으로서, N2가스에 의해서 발생된 기포로 의하여 보호관에 유입된 약액의 레벨이 상승하는 것을 방지할 수 있는 반도체 웨이퍼 제조용 약액용기의 레벨측정장치를 제공하는데 그 목적이 있다.The present invention has been invented to solve the above conventional problems, the level measuring device of the chemical liquid container for manufacturing a semiconductor wafer that can prevent the level of the chemical liquid introduced into the protective tube by the bubbles generated by the N 2 gas to rise. The purpose is to provide.
상기 목적을 달성하기 위한 본 발명은 반도체 웨이퍼를 제조하는 약액저장조의 일측에 설치되어 N2가스를 연속적으로 배출하면서 약액의 레벨을 측정하는 레벨센서와 상기 N2가스에 의해서 발생되는 기포가 웨이퍼측으로 이동하는 것을 방지하기 위하여 레벨센서의 외측에 보호관이 설치된 것에 있어서, 상기 N2가스에 의해서 발생되는 기포의 크기보다 작은 직경을 갖는 통공을 보호관의 둘레면에 다수개 형성하여서 된것이다.The present invention for achieving the abovementioned objects is towards the air bubbles that are installed at one side of the drug solution storage tank for producing the semiconductor wafer caused by the N 2 gas and a level sensor for measuring the level of the chemical liquid while discharging the N 2 gas continuously wafer In order to prevent the movement of the protective tube is provided on the outside of the level sensor, a plurality of through holes having a diameter smaller than the size of the bubbles generated by the N 2 gas is formed in the peripheral surface of the protective tube.
도 1은 종래의 레벨측정장치가 설치된 반도체 웨이퍼 제조용 약액용기의 단면도,1 is a cross-sectional view of a chemical liquid container for manufacturing a semiconductor wafer in which a conventional level measuring device is installed;
도 2는 본 발명에 따른 레벨측정장치가 설치된 반도체 웨이퍼 제조용 약액용기의 단면도,2 is a cross-sectional view of a chemical liquid container for manufacturing a semiconductor wafer having a level measuring device according to the present invention;
도 3은 도 2의 'A'부분 확대 단면도.3 is an enlarged sectional view taken along the line 'A' of FIG.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
W : 웨이퍼 1 : 약액저장조W: Wafer 1: Chemical Storage Tank
2 : 레벨센서 3 : 보호관2: level sensor 3: protective tube
4 : 통공4: through-hole
이하, 본 발명을 도시한 첨부도면 도 2 및 도 3을 참조하여 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to FIGS. 2 and 3.
도 2는 본 발명에 따른 레벨측정장치가 설치된 반도체 웨이퍼 제조용 약액용기의 단면도이고, 도 3은 도 2의 'A'부분 확대 단면도로서, 본 발명은 약액이 담겨지는 약액저장조(1)의 일측에 N2가스가 연속적으로 공급되는 레벨센서(2)가 설치되어 있다.FIG. 2 is a cross-sectional view of a chemical liquid container for manufacturing a semiconductor wafer having a level measuring device according to the present invention, and FIG. 3 is an enlarged cross-sectional view of a portion 'A' of FIG. N is 2 gas is the continuous level sensor 2 is supplied to the installation.
한편 상기 레벨센서(2)의 외측에는 N2가스에 의해서 발생되는 기포를 직상부로 안내하여 기포가 약액저장조(1)에 담겨진 웨이퍼(W)측으로 이동하는 것을 방지하기 위한 보호관(3)이 설치되어 있고 상기 보호관(3)상에는 N2가스에 의해서 발생되는 기포의 크기보다 작은 직경을 갖는 통공(4)이 복수개 형성되어 있다.On the other hand, a protective tube 3 is installed outside the level sensor 2 to guide the bubbles generated by the N 2 gas to the upper portion to prevent the bubbles from moving toward the wafer W contained in the chemical liquid storage tank 1. On the protective tube 3, a plurality of through holes 4 having a diameter smaller than the size of bubbles generated by the N 2 gas are formed.
이와같이 구성된 본 발명의 레벨측정장치로 약액저장조(1)에 담겨진 약액의 레벨을 측정하는 동작을 설명하면 다음과 같다.The operation of measuring the level of the chemical liquid contained in the chemical liquid storage tank 1 by the level measuring device of the present invention configured as described above is as follows.
웨이퍼(W)를 제조하는 공정에 필요한 약액을 약액저장조(1)의 내부에 공급하면 상기 약액은 약액저장조(1)의 하부로부터 높이가 상승되고 이 약액은 보호관(3)의 단부 및 둘레면에 형성된 다수의 통공(4)을 통하여 보호관(3)의 내부로 유입되어 약액저장조(1)에 공급된 약액과 보호관(3)의 내부로 유입된 약액의 높이가 동일하게 유지된다.When the chemical liquid required for the process of manufacturing the wafer W is supplied into the chemical liquid storage tank 1, the chemical liquid is raised from the lower part of the chemical liquid storage tank 1, and the chemical liquid is formed at the end and the peripheral surface of the protective tube 3. Through the plurality of through-holes (4) formed to enter the inside of the protective tube (3) is supplied to the chemical liquid storage tank 1 and the height of the chemical liquid introduced into the inside of the protective tube (3) is maintained the same.
한편 약액저장조(1)에 공급된 약액을 레벨을 측정하기 위하여 레벨센서(2)를 통하여 N2가스를 연속적을 공급하면 보호관(3)의 내부에는 N2가스에 의해서 기포가 발생하게 된다.On the other hand, when the N 2 gas is continuously supplied through the level sensor 2 to measure the level of the chemical liquid supplied to the chemical storage tank 1, bubbles are generated in the protective tube 3 by the N 2 gas.
상기 기포는 보호관(3)의 둘레면에 형성된 통공(4)의 직경보다 크게 되어 상기 통공(4)을 통하여 배출되지 못하게 되며 상기 보호관(3)의 둘레면에 형성된 통공(4)을 통하여 약액이 유입되므로 고농도의 약액이 약액저장조(1)로 공급되어도 약액저장조(1)에 공급된 약액의 레벨과 보호관(3)의 내부로 유입된 약액의 레벨이 이정하게 유지되므로 약액의 정확한 레벨을 측정할 수 있게 되는 것이다.The bubble is larger than the diameter of the through hole (4) formed on the circumferential surface of the protective tube (3) can not be discharged through the through hole (4) and the chemical liquid through the through hole (4) formed on the circumferential surface of the protective tube (3) Therefore, even if a high concentration of the chemical liquid is supplied to the chemical storage tank (1), the level of the chemical liquid supplied to the chemical liquid storage tank (1) and the level of the chemical liquid introduced into the protective tube (3) remain constant so that the accurate level of the chemical liquid can be measured. It will be possible.
이상에서와 같이 본 발명은 N2가스에 의해서 발생되는 기포를 안내하는 보호관의 둘레면에 형성된 통공으로 약액이 유입됨은 물론 상기 기포가 통공을 통하여 배출되지 않게 되므로 약액저장조와 보호관의 내부로 유입된 약액의 레벨이 동일하게 유지되므로 약액저장조에 공급되는 약액의 레벨을 정확하게 측정할 수 있게 되는 매우 유용한 발명이다.As described above, the present invention, as well as the chemical solution is introduced into the through hole formed in the circumferential surface of the protective tube for guiding the bubbles generated by the N 2 gas, so that the bubble is not discharged through the through hole is introduced into the chemical storage tank and the protective tube Since the level of the chemical liquid is kept the same, it is a very useful invention that can accurately measure the level of the chemical liquid supplied to the chemical liquid reservoir.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019990028765A KR100300678B1 (en) | 1999-07-15 | 1999-07-15 | Level measuring aparatus of chemical bath for water making semiconductor |
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| KR1019990028765A KR100300678B1 (en) | 1999-07-15 | 1999-07-15 | Level measuring aparatus of chemical bath for water making semiconductor |
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| KR20010010077A KR20010010077A (en) | 2001-02-05 |
| KR100300678B1 true KR100300678B1 (en) | 2001-11-01 |
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| KR20010010077A (en) | 2001-02-05 |
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