KR100293476B1 - method for fabricating GaN semiconductor laser - Google Patents
method for fabricating GaN semiconductor laser Download PDFInfo
- Publication number
- KR100293476B1 KR100293476B1 KR1019990014233A KR19990014233A KR100293476B1 KR 100293476 B1 KR100293476 B1 KR 100293476B1 KR 1019990014233 A KR1019990014233 A KR 1019990014233A KR 19990014233 A KR19990014233 A KR 19990014233A KR 100293476 B1 KR100293476 B1 KR 100293476B1
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor laser
- substrate
- gan
- oxide film
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000005253 cladding Methods 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000001312 dry etching Methods 0.000 description 11
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Abstract
본 발명은 제조공정을 경감시킴과 동시에 기판과 그위에 형성되는 에피택셜층과의 격자부정합에 의한 스트레인을 분산시킴으로써 두꺼운 에피택셜층의 크랙발생을 크게 경감시킬 수 있는 질화갈륨 반도체 레이저의 제조방법을 제공하기 위한 것으로, 기판상에 소정간격으로 산화막 패턴을 형성하고, 상기 산화막을 포함한 기판전면에 제 1 도전형 클래드층, 활성층, 제 2 도전형 클래드층 및 캡층을 순차적으로 형성한 후 식각에 의해 리지패턴과 메사형태를 형성하고, 상기 리지패턴 및 상기 제 1 도전형 클래드층에 각각 전극을 형성하는 단계를 구비함을 특징으로 한다.The present invention provides a method for manufacturing a gallium nitride semiconductor laser which can greatly reduce the occurrence of cracks in a thick epitaxial layer by dispersing strain due to lattice mismatch between the substrate and the epitaxial layer formed thereon. In order to provide, an oxide film pattern is formed on a substrate at predetermined intervals, and a first conductive cladding layer, an active layer, a second conductive cladding layer, and a cap layer are sequentially formed on the entire surface of the substrate including the oxide film, followed by etching. Forming a ridge pattern and a mesa shape, and forming electrodes on the ridge pattern and the first conductive cladding layer, respectively.
Description
본 발명은 청색파장을 내는 질화갈륨 반도체 레이저의 제조방법에 관한 것으로, 소자 제조시의 특히 선택적 성장에 의해 소자간을 격리하도록 한 질화갈륨 반도체 레이저의 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a gallium nitride semiconductor laser that emits blue wavelengths, and more particularly, to a method for manufacturing a gallium nitride semiconductor laser in which devices are isolated by selective growth during device manufacturing.
종래 기술에 의한 청색 파장을 내는 질화갈륨 반도체 레이저의 제조방법은 첨부된 도면을 근거하여 설명하면 다음과 같다.A method of manufacturing a gallium nitride semiconductor laser having a blue wavelength according to the prior art will be described with reference to the accompanying drawings.
먼저, 도 1a에 도시된 바와같이, 사파이어 기판(1)위에 GaN 버퍼층(2), n-GaN층(3), n-AlGaN 캐리어구속층(carrier confinement layer)(또는 클래드(clad)층)(4),n-GaN 웨이브가이드층(5) 그리고 InxGa1-xN/InyGa1-yN 활성층(6)을 MOCVD 방법을 이용하여 순차적으로 성장시킨 후, 이어 P-GaN 웨이브 가이드층(7), P-AlGaN 캐리어구속층(또는 클래드층)(8) 그리고 P-GaN 캡층(9)을 순차적으로 성장시킨다.First, as shown in FIG. 1A, a GaN buffer layer 2, an n-GaN layer 3, an n-AlGaN carrier confinement layer (or a clad layer) on the sapphire substrate 1 ( 4), the n-GaN waveguide layer 5 and the In x Ga 1-x N / In y Ga 1-y N active layer 6 are sequentially grown by MOCVD method, followed by the P-GaN wave guide. The layer 7, the P-AlGaN carrier confinement layer (or cladding layer) 8 and the P-GaN cap layer 9 are grown sequentially.
상기 각층의 성장이 모두 완료되면 도 1b에 도시된 바와같이, 건식식각 방법으로 P-AlGaN 캐리어 구속층(8)의 일부분이 노출될때까지 상기 P-GaN 캡층(9)을 식각하여 리지 패턴(Ridge Pattern)(10)을 형성한다.When the growth of each layer is completed, as shown in FIG. 1B, the P-GaN cap layer 9 is etched until a part of the P-AlGaN carrier restraint layer 8 is exposed by a dry etching method, thereby forming a ridge pattern. Pattern) 10 is formed.
이어 도 1c에 도시된 바와 같이, 레이저 공진기로 사용될 거울을 만들기 위한 메사(11)를 n-GaN층(3)의 일부분이 노출될때까지 건식식각으로 형성한다.Then, as shown in FIG. 1C, a mesa 11 for forming a mirror to be used as a laser resonator is formed by dry etching until a portion of the n-GaN layer 3 is exposed.
상기 메사 및 미러형성 공정이 완료되면, 도 1d에 도시된 바와 같이 각 소자들을 전기적으로 분리시키기 위한 소자 분리 건식 식각 공정을 상기 기판(1)이 노출하여 분리홈(12)이 형성될때까지 수행한다.When the mesa and mirror forming process is completed, an element isolation dry etching process for electrically separating each element as shown in FIG. 1D is performed until the substrate 1 is exposed to form a separation groove 12. .
그 다음 도 1d에 도시된 바와같이 P-메탈(13)와 n-메탈(14)을 각각 리지(10)위와 메사 에칭에 의해 일부분이 노출된 n-GaN층(3) 위에 형성한다.P-metal 13 and n-metal 14 are then formed on the ridge 10 and on the n-GaN layer 3, partly exposed by mesa etching, as shown in FIG. 1D.
상기와 같은 종래 기술의 제조방법은 청색 질화갈륨 반도체 레이저의 건식 식각공정이 모두 세 번이나 필요하게되므로 특성에 나쁜 영향을 주게될 뿐만 아니라 제조 공정시간과 제조비용이 많게 소요되며, 메사공정을 통해 이미 만들어져 있는 미러가 상기 소자 분리 건식 식각 공정에 의해 악영향을 받게되어 소자특성이 저하될 우려가 있고 또한 사파이어 기판에 GaN 에피택셜층을 성장시키는 경우 상기 기판과 GaN 에피택셜층의 격자 부정합이 너무 커서 두꺼운 에피택셜층을 성장시킬 때 에피택셜층에 크랙이 생기게 되므로 n-GaN층을 두껍게 성장하기가 어렵고 이로인해 전위(dislocation)를 충분히 제거하기가 어려워 양질의 결정질을 갖는 에피택셜층을 성장시키는데는 한계가 있다는 문제점이 있었다.Since the dry etching process of the blue gallium nitride semiconductor laser is required three times, the conventional manufacturing method as described above not only adversely affects the characteristics but also requires a lot of manufacturing process time and manufacturing cost. The previously made mirror may be adversely affected by the device isolation dry etching process, which may lower the device characteristics, and when the GaN epitaxial layer is grown on the sapphire substrate, the lattice mismatch between the substrate and the GaN epitaxial layer is too large. When growing a thick epitaxial layer, the epitaxial layer is cracked, so it is difficult to grow the n-GaN layer thickly, which makes it difficult to remove dislocations sufficiently, thereby growing an epitaxial layer having good crystalline quality. There was a problem that there was a limit.
따라서 본 발명은 이와같은 종래기술의 문제점을 감안하여 발명한 것으로, 본 발명의 목적은 건식식각 공정을 경감시킴과 동시에 기판과 그위에 형성되는 에피택셜층과의 격자부정합에 의한 스트레인을 분산시킴으로써 두꺼운 에피택셜층의 크랙발생을 크게 경감시킬 수 있는 질화갈륨 반도체 레이저의 제조방법을 제공하는데 있다.Accordingly, the present invention has been invented in view of the above-described problems of the prior art, and an object of the present invention is to reduce the dry etching process and at the same time disperse the strain by lattice mismatch between the substrate and the epitaxial layer formed thereon. The present invention provides a method for manufacturing a gallium nitride semiconductor laser that can greatly reduce the occurrence of cracks in the epitaxial layer.
도 1a ~ 도 1e는 종래의 질화갈륨 반도체 레이저의 각 제조공정에서의 반도체 레이저의 단면을 개략적으로 도시한 도면1A to 1E schematically show a cross section of a semiconductor laser in each manufacturing process of a conventional gallium nitride semiconductor laser.
도 2a ~ 도 2e는 본 발명에 따른 질화갈륨 반도체 레이저의 각 제조공정에서의 반도체 레이저의 단면을 개략적으로 도시한 도면이다.2A to 2E are schematic views showing a cross section of a semiconductor laser in each manufacturing process of a gallium nitride semiconductor laser according to the present invention.
도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings
1,21 : 사파이어기판1,21: Sapphire substrate
8,29 : P-AlGaN 캐리어구속(또는 클래드)층8,29: P-AlGaN carrier binding (or cladding) layer
2,23 : GaN 버퍼층 9,30 : P-GaN 캡층2,23 GaN buffer layer 9,30 P-GaN cap layer
3,24 : n-GaN층 10,31 : 리지패턴3,24 n-GaN layer 10,31 ridge pattern
4,25 : n-AlGaN 캐리어 구속(또는 클래드)층4,25: n-AlGaN carrier confined (or clad) layer
11,32 : 메사 5,26 : n-GaN 웨이브 가이드층11,32 Mesa 5,26 n-GaN wave guide layer
12,33 : P 메탈 6,27 : InxGa1-xN/InyGa1-yN 활성층12,33: P metal 6,27: In x Ga 1-x N / In y Ga 1-y N active layer
13,34 : n 메탈 7,28 : P-GaN 웨이브 가이드층13,34 n metal 7,28 P-GaN wave guide layer
22 : 산화막 마스크 패턴22: oxide mask pattern
이와같은 목적을 달성하기 위한 본 발명의 질화갈륨 반도체 레이저의 제조방법은, 실리콘 산화막을 이용하여 처음부터 소자가 형성될 영역에만 질화갈륨 반도체결정이 성장되도록 선택적 결정성장을 하여 소자를 분리하도록 하고, 이와같은 본 발명의 특징에 따르면 별도의 소자분리 식각 공정을 없애어 소자에 악영향을 주는 건식식각 공정수를 줄임과 동시에 기판과 에피택셜층과의 격자 부정합에 따른 스트레인을 분산시켜 두꺼운 에피택셜층을 크랙발생없이 성장시키고 그위에 질화갈륨 레이저 반도체소자를 성장시켜 양질의 반도체 레이저를 만들 수 있다.The method of manufacturing a gallium nitride semiconductor laser of the present invention for achieving the above object, by using a silicon oxide film to selectively crystal growth so that the gallium nitride semiconductor crystal is grown only in the region where the device is to be formed from the beginning to separate the device, According to the features of the present invention, a separate epitaxial layer is removed to reduce the number of dry etching processes that adversely affect the device, and to disperse strain due to lattice mismatch between the substrate and the epitaxial layer. It is possible to make a high quality semiconductor laser by growing without crack generation and by growing a gallium nitride laser semiconductor device thereon.
이하 본 발명의 실시예에 대하여 첨부도면에 근거하여 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2a 내지 도 2e는 본 발명의 실시예의 각 공정에서의 단면을 개략적으로 도시한 것으로 본 발명의 제조방법은 먼저, 도 2a에 도시된 바와같이 사파이어기판(21)에 SiO2산화막을 증착시킨 후, 스트립 형상이나 또는 소자하나가 들어갈만한 면적으로 실리콘 산화막을 포토리소그래피 공정으로 제거하여 산화막 패턴(22)을 형성한다.2A to 2E schematically illustrate the cross section of each process of the embodiment of the present invention. The manufacturing method of the present invention firstly deposits an SiO 2 oxide film on a sapphire substrate 21 as shown in FIG. 2A. The oxide film pattern 22 is formed by removing the silicon oxide film by a photolithography process in a strip shape or an area in which one element fits.
이때 실리콘 산화막의 두께가 너무 얇으면 그 이후의 반도체 결정성장 시의성장(overgrowth)에 의해 성장이 완료된 소자간의 접촉이 일어날 수 있으므로 산화막의 두께는 0.5㎛ 이상으로 하는 것이 바람직하다.In this case, if the thickness of the silicon oxide film is too thin, contact between the devices in which growth is completed may occur due to overgrowth during subsequent semiconductor crystal growth. Therefore, the thickness of the oxide film is preferably 0.5 μm or more.
또한 이후의 선택적 결정성장시 측방향 성장(lateral overgrowth)이 생기는 방향이 주로〈11-00>이므로 산화막 패턴(22)의 길이방향이〈11-00> 방향과 일치하지 않도록 하는 것이 바람직하다.In addition, since the direction in which lateral overgrowth occurs during the subsequent selective crystal growth is mainly <11-00>, it is preferable that the longitudinal direction of the oxide layer pattern 22 does not coincide with the <11-00> direction.
이어 도 2b에 도시된 바와같이 MOCVD 방법을 이용하여 GaN 버퍼층(23), n-GaN층(24), n-AlGaN 캐리어구속(또는 클래드)층(25), n-GaN 웨이브 가이드층(26), InxGa1-xN/InyGa1-yN 활성층(27)을 순차적으로 성장시킨 후, 이어 P-GaN 웨이브 가이드층(28), P-AlGaN 캐리어구속(또는 클래드)층(29) 그리고 P-GaN 캡층(30)을 성장시킨다.Subsequently, as shown in FIG. 2B, the GaN buffer layer 23, the n-GaN layer 24, the n-AlGaN carrier confinement (or cladding) layer 25, and the n-GaN wave guide layer 26 using the MOCVD method. After sequentially growing the In x Ga 1-x N / In y Ga 1-y N active layer 27, the P-GaN wave guide layer 28 and the P-AlGaN carrier binding (or cladding) layer 29 ) And the P-GaN cap layer 30 is grown.
이때 실리콘 산화막이 제거된 부분에만 반도체 결정층이 성장되게 되므로 도 2b와 같이 처음부터 소자들이 분리하게 된다.In this case, since the semiconductor crystal layer is grown only in the portion where the silicon oxide film is removed, the devices are separated from the beginning as shown in FIG. 2B.
그리고 반도체 결정성장시에 n-GaN층(24)의 두께를 가급적 두껍게 성장하여 전위(dislocation)를 줄이는 것이 보다 양호한 특성의 청색 반도체 레이저를 제조할 수 있으며, 본 발명에 의하면 각 소자들이 분리된 형태로 결정성장이 이루어지기 때문에 에피택셜층간의 스트레인이 각 소자들에 해당하는 면적들로 분산되어서 크랙이 없는 두꺼운 n-GaN층(24)을 성장시킬 수 있다.In the semiconductor crystal growth, the thickness of the n-GaN layer 24 is increased as thick as possible to reduce dislocations, thereby producing a blue semiconductor laser having better characteristics. As the crystal growth occurs, strain between the epitaxial layers is dispersed in areas corresponding to the devices, thereby growing a thick n-GaN layer 24 without cracks.
그 다음, 도 2c에 도시된 바와같이, 폭 약 5㎛, 길이 500㎛인 형태의 리지패턴(ridge pattern)(31)을, P-AlGaN 캐리어 구속(또는 클래드층)층(29)의 일부분이 들어날때까지 건식식각하여 형성하며, 리지 패턴(31)의 형성공정이 완료되면, 도 2d에 도시된 바와같이, n-GaN층(24)의 일부분이 노출될때까지 건식식각을 이용하여 레이저의 공진기로 사용될 거울을 제작하기 위한 메사(32)를 형성한다.Next, as shown in FIG. 2C, a ridge pattern 31 having a shape of about 5 μm in width and 500 μm in length is formed by a portion of the P-AlGaN carrier restraint (or clad layer) layer 29. Dry etching until entering, and when the formation process of the ridge pattern 31 is completed, as shown in Figure 2d, the laser resonator using dry etching until a portion of the n-GaN layer 24 is exposed To form a mesa 32 for manufacturing a mirror to be used as.
거울 제작을 위한 메사의 제조가 완료되면, 최종적으로 도 3e에 도시된 바와같이, P-메탈(33)과 n-메탈(34)을 각각 리지패턴(31)의 위와 메사에칭에 의해 일부분이 노출된 n-GaN층(24)위에 형성한다.When the fabrication of the mesa for the mirror fabrication is completed, finally, as shown in FIG. 3E, a portion of the P-metal 33 and the n-metal 34 are exposed on the ridge pattern 31 and by mesa etching, respectively. It is formed on the n-GaN layer 24.
그 다음 전극 형성공정이 모두 끝나면 래핑공정을 통하여 기판의 두께를 얇게 한다.After the electrode forming process is completed, the thickness of the substrate is thinned through the lapping process.
종래의 제조방법에서는 기판과 에피택셜층간의 격자부정합에 의한 스트레인에 의해 기판을 너무 얇게 갈아내면 기판과 에피택셜층이 휘어지거나 심하면 깨어져버리는 경우가 있으나 본 발명에 의하면 각 소자들을 이미 확실하게 분리시켜 놓은 상태이기 때문에 격자부정합에 의한 스트레인이 많이 완화되어 있으므로 얇게 래핑하여도 기판과 에피택셜층이 휘어지는 것을 방지할 수 있으므로 수율을 향상시킬 수 있다.In the conventional manufacturing method, if the substrate is too thinly ground due to the strain due to lattice mismatch between the substrate and the epitaxial layer, the substrate and the epitaxial layer may be bent or severely broken. Since it is in the laid state, the strain due to lattice mismatching is alleviated, so that even if thinly wrapped, the substrate and the epitaxial layer can be prevented from being bent, so that the yield can be improved.
이상과 같이 본 발명에 의한 질화갈륨 반도체 레이저의 제조방법은 소자가 형성되는 처음부터 산화막 패턴에 의해 소자가 분리되기 때문에 별도의 소자 분리공정인 건식식각 공정이 필요없게 되고 이와같은 건식식각 공정이 줄어들게 되므로써 건식식각 공정중에 프라즈마 등에 의해 반도체 결정이 겪는 손상을 줄일 수 있어 소자특성을 향상시킬 수 있고 각 소자의 제조시에 소자가 분리되어 있기 때문에 기판과 에피택셜층과의 격자부정합에 의한 스트레인을 분산시켜 줄일 수 있어서 상당한 두께의 에피택셜층도 크랙없이 성장시킬 수 있으며, 이로인해 크랙이 없는 두꺼운 GaN의 에피택셜층에 레이저 각 구성부를 성장시킬 수 있어 양질의 반도체 레이저를 제조할 수 있는 효과가 있다.As described above, in the method of manufacturing the gallium nitride semiconductor laser according to the present invention, since the devices are separated by the oxide layer pattern from the beginning of the formation of the devices, a separate etching process, which is a separate device separation process, is not required, and such a dry etching process is reduced. Therefore, the damage caused by the semiconductor crystal during the dry etching process can be reduced, thereby improving the device characteristics, and since the devices are separated at the time of manufacturing each device, the strain due to lattice mismatch between the substrate and the epitaxial layer is dispersed. It can be reduced, so that the epitaxial layer of considerable thickness can be grown without crack, and thus, each component of the laser can be grown in the thick GaN epitaxial layer without cracks, thereby producing a high quality semiconductor laser. .
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990014233A KR100293476B1 (en) | 1999-04-21 | 1999-04-21 | method for fabricating GaN semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019990014233A KR100293476B1 (en) | 1999-04-21 | 1999-04-21 | method for fabricating GaN semiconductor laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20000066851A KR20000066851A (en) | 2000-11-15 |
| KR100293476B1 true KR100293476B1 (en) | 2001-06-15 |
Family
ID=19581375
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019990014233A KR100293476B1 (en) | 1999-04-21 | 1999-04-21 | method for fabricating GaN semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100293476B1 (en) |
-
1999
- 1999-04-21 KR KR1019990014233A patent/KR100293476B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR20000066851A (en) | 2000-11-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20010004488A1 (en) | Method of manufacturing crystal of III-V compounds of the nitride system, crystal substrate of III-V compounds of the nitride system, crystal film of III-V compounds of the nitride system, and method of manufacturing device | |
| KR102108196B1 (en) | Deep ultraviolet light emitting device separated from growth substrate and method for fabricating the same | |
| US20090137098A1 (en) | Method of manufacturing semiconductor element | |
| KR20050009271A (en) | Multibeam semiconductor laser, semiconductor light-emitting device and semiconductor device | |
| US20040251519A1 (en) | Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate | |
| KR100539289B1 (en) | Semiconductor light-emitting device and the method for producing thereof | |
| US6620641B2 (en) | Semiconductor light emitting device and its manufacturing method | |
| KR19980087225A (en) | Gallium nitride compound semiconductor light emitting device and manufacturing method thereof | |
| CN112072466A (en) | Semiconductor laser and preparation method thereof | |
| KR100277940B1 (en) | GAN semiconductor laser diode and manufacturing method thereof | |
| JP2001044121A (en) | Epitaxial layer structure and manufacture thereof | |
| JP2000183460A (en) | Semiconductor element and its manufacture | |
| EP0982819B1 (en) | Epitaxial facet formation for laser diodes based on III-V material systems | |
| JP4608731B2 (en) | Manufacturing method of semiconductor laser | |
| KR100293476B1 (en) | method for fabricating GaN semiconductor laser | |
| JPH10326750A (en) | Selective formation of high quality gallium nitride layer, high quality gallium nitride layer formation substrate and semiconductor device manufactured on high quality gallium nitride layer grown substrate | |
| JP4720051B2 (en) | Nitride III-V compound semiconductor substrate, method for manufacturing the same, method for manufacturing semiconductor light emitting element, and method for manufacturing semiconductor device | |
| JP3982521B2 (en) | Nitride semiconductor device and manufacturing method thereof | |
| JP2005167194A (en) | Semiconductor device | |
| US5445993A (en) | Semiconductor laser diode and method for manufacturing the same | |
| EP1026799B1 (en) | Semiconductor laser and fabricating method therefor | |
| KR100558437B1 (en) | Method of producing a semiconductor laser device | |
| KR100568320B1 (en) | Method of producing multi-wavelength semiconductor laser device | |
| KR100390441B1 (en) | A blue color semiconductor laser manufacturing method for have active layer vertical | |
| KR101161875B1 (en) | Method for fabricating semiconductor laser diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20120327 Year of fee payment: 12 |
|
| FPAY | Annual fee payment |
Payment date: 20130326 Year of fee payment: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20160324 Year of fee payment: 16 |
|
| FPAY | Annual fee payment |
Payment date: 20170324 Year of fee payment: 17 |
|
| LAPS | Lapse due to unpaid annual fee |