KR100282455B1 - Method for fabricating solid state image sensing device the same - Google Patents

Abstract

The present invention relates to a solid state image pickup device suitable for improving short wavelength spectral characteristics of a red layer (Red) and a method of manufacturing the same, comprising a photodiode region, a vertical charge transfer region, a horizontal charge transfer region, and a metal light shielding layer formed on the pad portion. A first flat layer formed over the entire black and white solid-state image pickup device, a first dye layer formed in a predetermined region on the first flat layer, a second dye layer formed to be stacked with the first dye layer, and Third and fourth dyeing layers formed on the first flattening layer adjacent to the first dyeing layer, a second flattening layer formed on the entire surface of the first flattening layer including the respective dyeing layers, and the photodiode region; Correspondingly comprising a plurality of microlenses formed on the second flat layer on each dyed layer.

Description

Solid state image pickup device and method of manufacturing the same {METHOD FOR FABRICATING SOLID STATE IMAGE SENSING DEVICE THE SAME}

The present invention relates to a solid state image pickup device, and more particularly, to a solid state image pickup device suitable for improving short wavelength spectral characteristics of a red layer (Red) and a method of manufacturing the same.

In general, a solid-state image pickup device is arranged in a matrix form at regular intervals, and between a plurality of photoelectric conversion regions for converting a light signal into an electrical signal to generate an image charge, respectively, between the photoelectric conversion regions in the vertical direction. A plurality of vertical charge transfer regions formed to transfer the image charges generated in the photoelectric conversion region in a vertical direction, a horizontal charge transfer region for transferring the image charges transferred in the vertical direction in a horizontal direction, and in the horizontal direction It is composed of a floating diffusion region that senses the transferred image charge and outputs it to the peripheral circuit unit.

Hereinafter, a method of manufacturing a conventional solid state image pickup device will be described with reference to the accompanying drawings.

1A to 1D are process cross-sectional views showing a method for manufacturing a color solid-state imaging device of the prior art.

First, as shown in FIG. 1A, signal charges formed in the photodiode region (PD) 12 and the photodiode region 12 for converting light into an electrical signal in a predetermined region of the substrate (not shown in the drawing) are applied. On the monochrome solid-state image pickup device 11 having a vertical charge transfer region (VCCD) 13 or the like which is transferred by the transfer gate and transferred vertically, and the metal light shielding layer 14 is formed on the vertical charge transfer region 13. The protective film 15 and the first flat layer 16 are sequentially formed.

In this case, the passivation layer 15 is removed on the pad PAD 17, and then only the first flat layer 16 is formed.

Subsequently, as shown in FIG. 1B, a photoresist is applied on the first flat layer 16 and then patterned using a red layer mask to form a first dye layer.

And dyeing is performed using a dyeing equipment to form a first dye layer (Red) 18.

Subsequently, as shown in FIG. 1C, a second dye layer (Green) 19 and a third dye layer (on the first flat layer 16) are formed on the first flat layer 16 in the same manner as the first dye layer (Red) 18. Blue) 20 are formed in order.

Next, as shown in FIG. 1D, a second flat layer 21 is formed on the first flat layer 16 including the dye layers 18, 19, and 20.

The second flat layer 21 is a flat layer for forming a microphone lens.

After the lens photoresist is applied on the second flat layer 21, exposure and development processes are performed.

Next, the microlenses 22 are formed on the respective dye layers 18, 19, and 20 by reflowing the photoresist through heat treatment.

Thereafter, the first and second planarization layers 16 and 21 formed on the pad PAD 17 are removed to expose the pad PAD, thereby completing the conventional solid state image pickup device manufacturing process.

In the conventional solid state image pickup device, light irradiated to the CCD through an image is focused by the microlens 22, and the light passes through each of the dye layers 18, 19, and 20, and light having a specific wavelength is photodiode region. (PD) 12 is irradiated.

Charges corresponding to the light irradiated to the photodiode region PD 12 are generated and these charges are transferred in the vertical direction by the vertical charge transfer region 13.

Subsequently, the charge transmitted in the vertical direction is amplified by the sensing amplifier located at the terminal through the horizontal charge transfer region (not shown) and finally output.

However, there is a problem in the manufacturing method of the solid state image pickup device of the prior art as described above.

That is, due to the limitation of the spectral characteristics adjustment, in the color reproducibility, especially in the red layer of the primary color filter, short wavelength light transmission occurs, thereby degrading the color reproducibility.

The present invention has been made to solve the above problems, and before forming the red layer, a yellow layer is formed at the place where the red layer is to be formed, and a red layer is formed thereon, thereby forming a short wavelength under the influence of the lower yellow layer. It is an object of the present invention to provide a solid state image pickup device and a method of manufacturing the same, which effectively block light to improve spectral characteristics and color reproducibility of a red layer.

1A to 1D are process cross-sectional views showing a manufacturing method of a solid state image pickup device of the related art.

2 is a structural cross-sectional view showing a solid state image pickup device according to the present invention.

3A to 3E are cross-sectional views illustrating a method of manufacturing a solid state image pickup device according to the present invention.

Explanation of symbols for main parts of the drawings

31: monochrome solid-state image pickup device 32: photodiode area

33: vertical charge transport region 34: metal light shielding layer

35 protective film 36 first flat layer

37: first dye layer 38: second dye layer

39: third dye layer 40: fourth dye layer

41 second planar layer 42 microlens

43: pad portion

A solid-state imaging device according to the present invention for achieving the above object is the first formed on the front surface of the monochrome solid-state imaging device having a photodiode region, a vertical charge transfer region, a horizontal charge transfer region and a metal light shielding layer formed on the pad portion A flat layer, a first dye layer formed in a predetermined region on the first flat layer, a second dye layer formed to be laminated with the first dye layer, and a first flat layer shape adjacent to the first dye layer Third and fourth dyeing layers formed on the second flat layer, a second flattening layer formed on the entire surface of the first flattening layer including the respective dyeing layers, and a second flattening layer on each dyeing layer upper portion corresponding to the photodiode region. It characterized in that it comprises a plurality of micro lenses formed in.

In addition, the method for manufacturing a solid-state image pickup device according to the present invention for achieving the above object is a monochrome solid-state image with a metal light shielding layer formed on the photodiode region, vertical charge transfer region, horizontal charge transfer region, charge transfer region Forming a first flat layer on the entire surface of the device, forming a first dye layer in a predetermined region on the first flat layer, forming a second dye layer to be laminated with the first dye layer; Sequentially forming third and fourth dye layers on the first flat layer adjacent to the first dye layer, and forming a second flat layer on the entire surface of the first flat layer including the respective dye layers; And forming a plurality of microlenses on a second flat layer on each of the dyed layers to correspond to the photodiode region.

Hereinafter, a solid state image pickup device and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings.

2 is a structural cross-sectional view showing a solid state image pickup device according to the present invention.

As shown in FIG. 2, the photodiode region PD converts light into an electrical signal in a predetermined region of the substrate, and the signal charges formed in the photodiode region 32 are received by the transfer gate and vertically transferred thereto. The passivation layer 35 and the first flat layer on the monochrome solid-state image pickup device 31 having a vertical charge transfer area (VCCD) 33 and the like and a metal light shielding layer 34 formed on the vertical charge area (VCCD). (36) are formed in order, and a first dye layer (37) is formed in a predetermined region on the first flat layer (36), and the second dye layer (38) is laminated with the first dye layer (37). Are formed, and the third and fourth dyeing layers 39 and 40 are formed on the first flat layer 36 adjacent to the first dyeing layer 37, and the respective dyeing layers 37, 38 and 39 are formed. A second flattening layer 41 is formed on the front surface of the substrate including the 40, and on the second flattening layer 41 on each of the dye layers 38, 39, and 40, corresponding to the photodiode region 31. On suit The micro lens 42 is formed.

3A to 3E are process cross-sectional views showing a method of manufacturing a solid state image pickup device according to the present invention.

First, as shown in FIG. 3A, signal charges formed in the photodiode region (PD) 32 and the photodiode region 32 for converting light into an electrical signal in a predetermined region of the substrate (not shown) are used. On the monochrome solid-state image pickup device 31 having a vertical charge charge area (VCCD) 33 and the like, which is handed over by the transfer gate and transferred vertically, and the metal light shielding layer 34 is formed on the vertical charge charge area (VCCD). The protective film 35 and the first flat layer 36 are sequentially formed.

In this case, the protective layer 35 is removed from the pad PAD 43, and only the first flat layer 36 is formed.

Subsequently, as shown in FIG. 3B, a first photoresist for yellow is applied onto the first flat layer 36, and then the photoresist for the first dyed layer is selectively patterned.

And the first dyeing layer (Yellow) layer 37 is formed by dyeing the substrate using a dyeing equipment.

That is, the substrate is immersed in a yellow dye and a fixation liquid and fixed with yellow dye to form a first dye layer 37.

After the second dye layer photoresist is applied to the entire surface of the substrate including the first dye layer 37 as shown in FIG. 3C, the second dye layer photoresist is left so as to remain only on the first dye layer 37. Selectively pattern.

The second dye layer (Red) 38 is formed in the same manner as the first dye layer 37.

Subsequently, as shown in FIG. 3D, the third dye layer (Green) 39 and the fourth dye layer (Blue) 40 are formed in the same manner as the second dye layer 38 by the first dye layer 37. Are sequentially formed on the first flat layer 36 next to.

Next, as shown in FIG. 3E, a second flat layer 41 is formed on the first flat layer 36 including the dye layers 37, 38, 39, and 40.

The second flat layer 41 is a flat layer for forming a microphone lens.

After the lens photoresist is applied on the second flat layer 41, exposure and development processes are performed.

Next, the microlenses 42 are formed on each of the dye layers 38, 39, and 40 by reflowing the photoresist through heat treatment.

Thereafter, the first and second flat layers 36 and 42 formed on the pad PAD are removed to expose the pad PAD, thereby completing the solid state image pickup device manufacturing process according to the present invention.

In the solid state image pickup device according to the present invention, the light irradiated to the CCD through the image is focused by the microlens 42, and the light passes through each of the dye layers 37, 38, 39, and 40. Light is irradiated to the photodiode region 32.

Charges corresponding to the light irradiated to the photodiode region 32 are generated, and these charges are transferred in the vertical direction by the vertical charge transfer region (VCCD) 33.

Subsequently, the charge transmitted in the vertical direction is amplified by the sensing amplifier located at the terminal through the horizontal charge transfer region (not shown) and finally output.

As described above, in order to improve the characteristics of the red layer of the primary color filter in the solid state image pickup device according to the present invention and the manufacturing method thereof, a yellow layer is first formed on the place where the red layer is formed before the red layer is formed. By forming the light emitting device, the short wavelength light is effectively blocked by the lower yellow layer, thereby improving the spectral characteristics of the red layer and the color reproducibility of the solid state image pickup device.

Claims (2)

A first flat layer formed on the front surface of the monochrome solid-state imaging device having a photodiode region, a vertical charge transfer region, a horizontal charge transfer region, and a metal shielding layer formed on the pad portion; A yellow layer formed in a predetermined region on the first flat layer; A red layer formed to be laminated with the yellow layer, A green layer and a blue layer formed on a first flat layer adjacent to the yellow layer; A second flat layer formed on the entire surface of the first flat layer including each of the red, green, and blue layers; And a plurality of microlenses formed on each of the red, green, and blue flat layers corresponding to the photodiode region. Forming a first flat layer on the front surface of the monochrome solid-state imaging device having a metal light shielding layer formed on the photodiode region, the vertical charge transfer region, the horizontal charge transfer region, and the charge transfer region; Forming a yellow layer on a predetermined region on the first flat layer; Forming a red layer to be stacked with the yellow layer; Sequentially forming a green layer and a blue layer on a first flat layer adjacent to the yellow layer; Forming a second flat layer on an entire surface of the first flat layer including each of the red, green, and blue layers; And And forming a plurality of microlenses on each of the red, green, and blue flat layers corresponding to the photodiode region.