KR100277604B1 - Mass production of surface mountable solid state capacitors and composite capacitors - Google Patents

Abstract

Disclosed are a method of manufacturing a plurality of surface mountable solid state capacitors. The method includes mounting a wafer of metal for forming a powder solid-state capacitor on an adhesive face, sintering the wafer and metal together to fuse the interface between the wafer and the adhesive face to convert the wafer into a porous integral mass, Separating the sintered wafer into a plurality of spaced apart subunits, isolating the interface or boundary between the adhesive substrate surface and the subunits in turn by resin injection or by insulating deposition, secondary anodization and manganese Converting the subunit into a capacitor by the step of: bonding a negative electrode plate to opposing electrode elements present on the upper surface of the subunit in electrical contact; insulating plates between the plates using the plates as elements of the mold Insulates the space between adjacent subunits by injecting material Filling a paper material, and then curing the resin and forming a separate protective capacitor through the plate and the cured resin. This disclosure teaches a solid state capacitor formed by the disclosed method.

Description

Mass production of surface mountable solid state capacitors and composite capacitors

1 through 9 are schematic cross-sectional views showing the sequential steps of capacitor manufacturing according to the first embodiment of the present invention;

3a is a perspective view of the sub assembly shown in the steps of FIG. 3,

10 is an enlarged partial perspective view of a capacitor completed in accordance with the present invention, produced by the method of FIGS.

11 to 19 are schematic cross-sectional views showing changes in the method of the advanced stages,

FIG. 20 is an enlarged partial perspective view of a completed capacitor made according to the method of FIGS. 11-19.

* Explanation of symbols for main parts of the drawings

10: adhesive substrate 11: upper surface

12 particle 13 wafer

14: lower surface 16: channel

17: resin 19: carbon layer

20 silver layer 21 cathode plate

[Background and Fields of the Invention]

FIELD OF THE INVENTION The present invention relates to the field of solid state capacitors, and more particularly to mass production methods and composite capacitors for the production of surface mountable solid state capacitors.

[Justice]

The term solid state capacitor, as used herein, provides a powder mass of metal (as defined below) for forming a solid state capacitor, compresses the mass to form a predetermined shape, and the mass The compressed mass is chemically reacted by, for example, anodizing the porous mass to form an insulating coating on the metallic surface within the mass, so that the compressed mass is incorporated into a single porous state, and then the conductive coating is applied onto the insulating coating. By capacitor (manganizing) means a capacitor formed.

In a solid state capacitor, the anodized metallic elements form the anode of the capacitor, and the conductive or manganese coating on the insulator forms the cathode or the opposite electrode.

As used herein, the term solid state forming metal means a metal used in the manufacture of a solid state capacitor. Solid state metals include one or more of the following metals: tantalum, niobium, molybdenum, silicon, aluminum, titanium, tungsten zirconium and alloys of these metals. The main solid state metals in use today are tantalum and low grade niobium.

As used herein, anodizing refers to porous sintering of a solid state metal by immersing the sintered metal, typically in an electrolyte, ie, a phosphoric acid solution, when the metal is connected to the anode of a direct current with respect to the cathode submerged in the electrolytic cell. It is meant to form an insulating coating on the absorbent metal surface throughout the mass.

The term manganese generally refers to the step of forming a conductive counter electrode coating over an insulator resulting from anodization. The manganese step is typically performed by immersing the anodized device in a manganese nitride solution and then heating the impregnated device in a humid atmosphere to convert the nitrate to solid conducting manganese dioxide.

Both anodization and manganese steps are well known in the art of forming solid state capacitors and may vary depending on the intended final properties of the solid state metals and capacitors used.

[Prior technology]

Solid state capacitors are highly valued by the fact that very high capacitance can be provided in a relatively limited volume space as a result of the large surface area of the metal in the sintered porous mass. For example, it is easy to provide a tantalum capacitor having a value of 50 to 100 MFD at an operating voltage of about 10 volts in a capacitor body having a volume of 0.027 cc.

Until now, the use of essentially large encapsulation methods has compromised much of the benefits of compactness. In particular, an advanced assessment of the present invention can be best obtained by reference to a conventional form of making commercially available solid state capacitors.

In such a production, the end of the tantalum metal rod is applied to the mass of compressed tantalum powder. The rod is bonded to the tantalum powder mass by mutually-sintering the rod and powder or by welding the rod to a pre-sintered mass of powder. The prefabricated units are then anodized and manganeseized, and such procedures are typically performed by grasping a tantalum rod and using that rod as a "handle" for subsequent steps.

Capacitor implants must be made in a manner usable for commercial applications.

Due to the weakness of the junction between the anode rod and the tantalum mass, it is typically necessary to place a capacitor in a lead frame structure having a compartment allowing attachment to a printed circuit board (PC board) or the like. Typically, the lead frame attachment connects the cathode to the capacitor body, welds between the anode rod and the other part of the lead frame, encapsulates the device while still connected to the lead frame, and then the protrusions of the lead frame and the lead frame. The connection is cut between the remainders to provide the finished capacitor.

As is well known to those skilled in the art, the above-described conventional solid state capacitor manufacturing technique has many difficulties in manufacturing, and becomes a completed capacitor package, the volume of which is several times as large as the actual capacitance generating element. . As is well known, the connection between the anode rod and the capacitor body is fragile and requires great care during capacitor preforming such as anodization, manganeseization and secondary steps.

Moreover, as required in conventional manufacture. Welding of solid state metals is a difficult process.

In the conventional method described above, great care is taken so that the cathode coating is not shorted with respect to the anode rod, so the need to space these elements further increases the overall size of the device.

Finally, and perhaps most importantly, in addition to the cost of leadframe fabrication, the large volume space occupied by the finished capacitor is counter to the current manufacturing process, where miniaturization is prevalent.

Typical embodiments of conventional solid state tantalum capacitors and fabrication methods are described in US Pat. No. 4,059,887; 4,520,430; 4,780,796 and 4,945,452 are described and illustrated.

Typical embodiments of solid state capacitors manufactured using the leadframe method are described in US Pat. No. 4,107,762; 4,539,623; 4,660,127; 4,899,258 and 4,907,131.

References relating to the investigation of techniques performed with respect to the present invention are described below.

U.S. Patent No. 3,117,365 deposits a U-shaped electrode pattern on a large sheet of insulator and stacks the sheets so that the base of the U-shaped electrode patterns leaves the opposite surface of the stack. Disclosed are ceramic capacitors formed by cutting to form respective terminated capacitors.

U. S. Patent No. 3,538, 571 discloses an embossed green ceramic sheet to provide an individual raised region to be an electrode later.

US Pat. No. 3,617,834 relates to a ceramic multilayer capacitor formed by providing a capacitor block with redundant edges and cutting the block in the overlapping regions to provide an end region.

U.S. Patent No. 3,635,759 discloses this operation until a multi-layered structure is formed in which a ceramic is applied in a binder on a porous screen, a suction tube is applied, and a liquid metal is deposited, which is later ignited and cut to form an independent capacitor. The method of forming a multilayer ceramic capacitor by repeating the above is disclosed.

US Patent No. 3,992,761 discloses a method of terminating capacitors by inserting a plurality of ceramic capacitors into a plastic block with exposed ends. The ends are applied to the exposed ends, and then the blocks are disassembled to remove the capacitor body.

U.S. Patent No. 4,045,867 includes those that pass the end wire upward through the hole in the bottom of the plastic prefabrication, attach the wire to the capacitor, introduce the capacitors into the prefabrication, and fill the prefabrication with resin and hardener. A method of molding a polymer composition relating to a capacitor is provided.

U. S. Patent No. 4,574, 438 forms a metallic layer on the adhesive face, forms a piezoelectric insulating layer on the metal, cuts the groove through the insulator and the metal and into the body of the adhesive face, fills the grooves with plastic, fills the groove Presenting a pressure response transducer made by forming a photolithographic spacer over a device portion to mate with, and finally attaching a cover having an electrode perpendicular to the groove.

U.S. Patent No. 4,959,652 reeles each capacitor, covers the ends by evaporation using a metal having a higher melting point than the solder that will be used to attach the capacitor to the printed wiring board, the capacitor is coated with a resin, and then A structure of a surface mountable capacitor in the form of a cured plastic produced by abrasively spaced apart the resin portion to expose the desired portion of the metal end material being applied.

[Overview of invention]

The present invention can be summarized as being directed to an improved method of manufacturing a plurality of surface mountable solid state capacitors and to an improved composite capacitor.

In short, the method includes providing a metal bonder surface that is preferably composed of a metal, such as a solid state metal, on which a capacitor is formed. A compacted wafer of powdered solid state metal is mounted on the adhesive face, which is several times larger than the size of each capacitor. The wafer and the adhesive surface are sintered together to bond the wafer to the adhesive surface and incorporate the powder into the porous mass.

The sintered wafer is divided into a plurality of sub-units by cutouts formed through the wafer perpendicular to the adhesive plane. Before or after the sub-division and / or subunits of the wafer are anodized and manganese, if the anodization and manganization procedure is performed before the subdivision, it is repeated again after the anodization and manganization step subdivision. I understand. In order to separate the interface between the bonder surface and the wafer from other regions of the wafer, the area between the separated subunits is preferably processed by a resin spraying step so that the manganese steps are used to form the anode of the device. Do not short circuit with the cathode of the capacitor.

A metal member is applied to the upper surface of the processed wafer so that mechanical and electrical contact with the upper surface forms the counter electrode. The space area between the separated capacitors formed as a result of the already performed cutting step is filled by injecting resin into the space formed between the bulk electrode plate and the adhesive surface acting in the form of a mold element, thereby the overall space formed by cutting. Is filled with insulating resinous material.

Finally, the composite is cut along the cutting lines that match the already formed cuts, i.e., through the counter electrode plate, the resin separating the respective capacitors and the gluer face, whereby the end formed by the counter electrode plate and the gluer face. Already encapsulated completed capacitors are formed, the elements forming the distal end of the capacitor allowing the attachment of the capacitor when the surface is mounted on a printed wiring board, the adhesive surface being the anode and cathode of the capacitor. The counter electrode is formed.

As will be appreciated by those skilled in the art who are familiar with conventional solid-state capacitors and their fabrication methods, many advantages arise in the fabrication methods generally described.

First, by eliminating conventional anode wires, the volumetric efficiency of the capacitor, i.e. the capacitance obtained within a particular volume of the unit, is increased by two to three times.

Moreover, not only the need for using a lead frame, but also major manufacturing problems such as using a positive wire and welding a positive wire to process preforms are completely excluded. Moreover, the method eliminates industrial problems such as short circuits between the anode wire and the cathode sheath covering the conventional solid state capacitors.

The main advantage of the present invention lies in the ability to provide an adhesive substrate with a sintered solid state metal wafer attached as a stock item. These standards allow only forming capacitors of desired capacity by varying the size of the capacitor and the space of the cutout formed in the wafer.

Importantly, the opposing electrode plate and the bonder, which act as a framework for the gang mold for the isolation of each capacitor and the injection of insulating resin which forms the final encapsulation of the finished capacitor after sawing. The use of cotton reduces the cost of the capsule portion significantly.

It is therefore an object of the present invention to provide a novel method for mass production of surface mountable solid state capacitors and improved composite capacitors.

It is another object of the present invention to provide a method for manufacturing a surface mountable solid state capacitor, wherein the protective material elements of the finished capacitor have one function during the manufacturing process, namely the anode-adhesive surface from the secondary electrode elements formed secondary to the capacitor. Insulate the body.

It is a further object of the present invention to provide a method for manufacturing solid state capacitors and composite capacitors which excludes weak connections between the anode rod and tantalum mass and between the anode rod and the terminal element providing a durable and reliable structure.

Detailed Description of the Drawings

Referring to the drawings, FIGS. 1 through 9 show a series of cross sectional views illustrating various steps of manufacturing a capacitor in accordance with a first embodiment of the present invention.

As will be apparent to those skilled in the art, the dimensions and ratios of the various elements have been exaggerated for clarity purposes.

In FIG. 1 an adhesive base 10 of a solid state metal, for example tantalum, is shown. It is desirable to apply a thin layer of tantalum particles 12 fused to the adhesive surface to the upper surface 11 of the adhesive surface 10, the particles 12 being attached to the enlarged junction of the wafer 13 as will be described later. Serves to provide a roughened surface. In place of the particles 12, the surface 11 may be roughened.

On the upper surface 11 of the adhesive machine surface 10, a wafer 13 composed of compressed tantalum powder mixed with an adhesive forming a coherent mass is applied. As is known in the art, the small particles making up the powder forming the wafer 13 may vary in size and such particle size determines the final properties of the composite capacitor. The wafer 13 and the adhesive substrate 10 are then inter-sintered to burn off the organic binder as initially, and then convert the powder of the wafer 13 into an integral porous mass. Sintering also joins the lower surface 14 to the upper surface 11 of the adhesive surface 10 that mechanically and electrically connects the contact surface.

By way of example and without limitation, the adhesive substrate surface may vary within an optimal range of 0.005 to 0.03 inch thick. The seed powder 12 uses a larger powder than the wafer powder, and may vary depending on the powder size used in the wafer 13 and may be optimal in the range of about 100 to 800 microns, for example. .

As an additional example, assuming that the adhesive base and the powder consist of tantalum, sintering at 2000 ° C. for 5 to 60 minutes is effective to create the desired bond and porosity, the temporal factor of which is the mass of the material forming the wafer. And small particle size. Treatment of metals for forming solid-state capacitors, including the formation of pellets, the sintering steps and additional processing steps (anodization and manganization) required to convert the porous mass into capacitors, are well known in the art. Since such processing steps do not form part of the invention, a description of such processing steps will be described briefly herein.

The bonder surface 10 and the sintered wafer 13 as shown in FIG. 2 are bonded in a cross pattern (see also FIG. 3A) that divides the wafer 13 into a plurality of separate capacitor forming units 15. It is subjected to the sawing step by a cutout formed perpendicular to the plane of the face 10. The cuts are preferably to a depth that exposes or slightly penetrates the surface 11 of the adhesive surface 10. Optionally, as a means of facilitating the processing of the composite constituting the gluing machine surface 10 and the wafer 13, the gluing machine surface can be inserted into a resin block (not shown) to a depth that exposes the top surface and the wafer. have.

The granular composite of FIGS. 3 and 3a is then subjected to a processing step of converting the porous sintered mass of the residual wafer into a capacitor after sawing. The processing step is well known in the art and includes an anodizing step, in which the adhesive surface is connected to a positive current source of DC current with respect to the cathode submerged in the electrolytic cell while the wafer is immersed in an electrolytic cell of 1% phosphate solution. Let's do it. This procedure converts the exposed portions of the adhesive substrate as well as the exposed portions of the wafer to an insulating material, for example, the metal used is tantalum to pentoxide.

The capacitor formation procedure involves the secondary formation of the counter electrode, which step involves, for example, dipping the composite in a manganese nitride solution and then placing the device in a humid atmosphere to convert the nitride into conductive manganese dioxide. It is carried out by heating with. The conventional method of anodizing and manganese, which ensures the desired insulation formation and coating of the counter electrode, can be repeated many times, and due to rupture or short circuit in the insulator which can be formed as a result of heating during fabrication of the counter electrode, It is understood that the rupture or short circuit is again anodic oxidation to ensure non-shorting between the anode (formed by tantalum metal) and the cathode or counter electrode (formed by the manganese process). need to be anodized.

The processing steps of the porous tantalum mass to form the capacitor are described in detail in US Pat. Nos. 4,059,887 and 4,945,452, incorporated herein by reference.

As shown in FIG. 4, a second series of sawing cuts S2 is formed to align with the first series of sawing cuts S1, the sawing cutout S2 into the adhesive plane. Penetrates deeper to form channels 16 therein. At this point, it is noted that the order of processing the wafer material by anodization and manganese is not critical to the present invention. For example, it is easy to anodize and manganize the entire wafer 13 before forming the sawing cuts S1 and S2, or to form the sawing cut before processing the wafer. Of course, if anodization is carried out before the cut, it is necessary to reprocess the sawed cut composite by anodization and manganese. The order of processing is best determined by trial and error, and depends on factors such as the size of each capacitor and the type of solid state metal powder (particle size) selected.

As shown in FIG. 5, the channels 16 are filled to the level of the surface 11 or slightly above the insulating constituent containing the resin. Optimally, the resin used may be a liquid epoxy resin, and various liquid resins that are secondary cured may be used.

After the formation of the second saw cut S2 and before filling the channels, the device is preferably subjected to an additional anodization step to provide an anodizing insulating layer over the metal exposed to the saw cut S2.

As will be evident from the foregoing description, the resin 17 (and subsequent saw cut anodization step) is intended for the formation of a capacitor with a single electrical connection between the metallic elements of the sintered tantalum powder forming the wafer 13. It is ensured that it is present on the surface 11 forming the interface between the members 15 and the adhesive machine surface.

As shown in FIG. 6, as in the conventional method, the upper surfaces 18 of the elements 15 have a first layer 19 of conductive carbon and a coating layer 20 of silver, formed by manganization. An electrical connection member is provided on the outer (upper) surface portion of the counter electrode.

As shown in FIG. 7, the negative electrode plate 21 is attached to the upper surface 22 of the silver coating layer 20 by a conductive adhesive, for example. After solidification of the adhesive, the spaces 23 formed by the initial saw cuts S1 are filled with a liquid insulating resin material (such as epoxy resin) and cured. The regions are very easily filled by the fact that the adhesive machine surface 10 and the negative electrode plate 21 together form a cell for containing the injected resin.

Finally, the composite unit shown in FIG. 8 is cut along the sawing line S3 that matches the sawing lines S1 and S2, the sawing step of which is carried out with a completed capacitor (as shown in FIG. 10). C)

As will be apparent, no further processing or protection is needed anymore, and saw cuts S3 form a complete encapsulated solid state capacitor. The capacitor is surface mountable, and the anode 10 'is composed of segments of the adhesive substrate 10, and the cathode or counter electrode 21' is composed of an increment of the cathode plate.

An important advantage of the present invention is the manufacture of a preform consisting of the standard size of the adhesive substrate and the wafer. By only changing the space of the saw cuts, it is possible to produce capacitors of various end characteristics according to the needs of the special user.

Without limitation, and in compliance with the best method requirements, the appropriate manufacturing sequence for the method implementations of FIGS. 1-9 is as follows:

[Manufacturing order]

1. Provide tantalum adhesive side

2. Add tantalum particles and heat them to bond the particles to the surface of the adhesive

3. Tantalum wafer is added and sintered to consolidate the powder, bonded to the adhesive machine surface and then anodized

4. Manganese

5. Sawing the wafer S1

6. Formation of insulators on saw cuts

7. Add the first resin barrier 17

8. Manganese

9. Carbon coating

10. Silver cloth attachment

11. Cathode plate bonding using conductive adhesive

12. Injection of the second resin capsule portion 24

13. Cutting wafers with separated capacitors

Variations of the method described in connection with FIGS. 1 to 9 are shown in FIGS. 11 to 19. The main difference between the methods lies in the exclusion of the first resin pouring step of adding the resin elements 17.

In the description of the procedure as shown in FIGS. 11 to 19, the same parts bear the same reference numbers used in the description of FIGS. 1 to 9.

According to the embodiment (of FIGS. 11 to 19), after the formation of the first sawing cutout S1, the exposed surfaces of the capacitor subelements 15 and the adhesive substrate 10 are exposed by the sawing cutouts. An insulating coating 30 is provided for sealing metallic elements, thereby providing an insulating barrier that protects the interface between the adhesive face and the base members 15. The device is then manganese, so that the narrower second saw cuts S2 are formed to mate with the saw cuts S1. The composite is then subjected to an additional insulator forming step such that the edges exposed by the sawing cutout S2 are sealed by an insulating coating (see FIG. 16). Thereafter, the composite is manganese to form a counter electrode, and is treated as a pre-application step of the carbon layer 19, the silver layer 20 and the negative electrode plate 21. Thereafter, the space between the capacitors is filled with the resin insulating mass 24 and sawed along the sawing lines S3 to form the completed capacitor 25 as shown in FIG.

The order of the steps of the method may vary somewhat as described with respect to FIGS. 1 to 9. With respect to the embodiment of FIGS. 11-19, the proper order is as follows:

[Manufacturing Procedure (Figure 11 to Figure 19)]

1. Roughen or sinter the metal particles to the surface of the adhesive

2. Load the wafer and mutually sinter the wafer and gluer surface.

3. Insulator formation.

4. Sawing to the level of the adhesive face (S1).

5. Seal the metal exposed by sawing to form additional insulators.

6. Manganese.

7. Form a deep cutout (S2) into the surface of the adhesive.

8. Anodize again to form an insulator in the groove formed by the S2 sawing step.

9. Manganese

10. Add carbon and silver to the top edge of the capacitor.

11. Attach the negative plate to the silver surface using a conductive adhesive.

12. Inject the resin.

13. Disconnect each capacitor by sawing cutout (S3).

As will be apparent from the foregoing description, a novel method of forming a solid-state capacitor is disclosed herein. Common to the method of the present invention is to provide a plurality of solid state capacitors separated by space regions to the cathode plate and the anode plate, the space being filled with insulating-protective resin, only the capacitor being completely formed After protection, each capacitor is separated from the matrix. The final sawing step provides a fully encapsulated and finished surface mountable capacitor, cut edges of the adhesive face forming the anode terminal and edge of the cathode plate forming the opposite electrode or cathode terminal.

Capacitors produced by the practice of this method provide a finished product having a volume of about one third the volume of a conventional solid-state capacitor, thus using space very efficiently. Unlike conventional capacitors that break upon removal of the anode rod from the sintered pellets and also result in the breakdown of the anode rod connection to the distal end, the capacitor of the present invention is substantially fracture resistant.

In accordance with the fact that the resin elements acting as protection of the finished capacitor serve as a means to facilitate the fabrication process by the insulation formation of the anode from the opposite electrode (method 1) and in accordance with the above-described deformation of the rigid matrix during the final sawing operation. This manufacturing method is unique.

As will be apparent to those skilled in the art and known herein, various modifications may be made in the structure and the method without departing from the spirit of the invention. Accordingly, the invention can be broadly interpreted within the scope of the appended claims.

Claims (22)

In the method of forming a plurality of solid-state capacitors at the same time, Providing a metal bonder surface, Mounting a wafer of powdered solid-state capacitor forming metal on the bonder surface having a lower surface that mates with the bonder surface and an upper surface spaced parallel to the bonder surface, Bonding the lower surface to the adhesive surface and sintering the wafer and adhesive surface to coalesce the powder of the wafer into a porous mass, Dividing the wafer into a plurality of separate units by forming a first series of cutouts S1 in a plane perpendicular to the adhesive plane; Subjecting the wafer to anodizing to form an insulating coating across the porous mass, Forming a conductive opposing electrode coating over said insulating coating, said conductive counter electrode covering covering said top surface, Electrically and mechanically bonding a metal member parallel to the adhesive machine surface to the counter electrode sheath on the upper surface, Injecting an insulating material between the adhesive surface and the member to substantially fill the space between the separate units of the wafer formed by the first series of cuts (S1), and Then forming a second series of cuts (S2) that mate parallel to the first series of cuts through the metal member, insulating material, and adhesive machine surface. The method of claim 1, wherein the first series of cutouts (S1) are formed to a depth to form channels in the surface of the bonder, the method comprising at least up to the surface level of the surface of the bonder before forming the counter electrode coating. Filling the channels with an insulating material. The granular increment of the solid-state metal having a particle size larger than the particle size of the powder of the wafer prior to mounting the wafer on the bonder face is fused to the bonder face. Making a step; The method of claim 1, wherein the metal for forming the solid state capacitor comprises tantalum. 5. The method of claim 4, wherein at least the top surface of the adhesive face comprises tantalum. A method of simultaneously forming a plurality of solid-state surface mount capacitors, Providing a planar metal bonder surface having an upper surface, Mounting a wafer of powdered solid state capacitor forming metal on the surface of the bonder surface having a lower surface that mates with the upper surface of the bonder surface and an upper surface spaced parallel to the adhesive surface; Bonding the wafer to the bonder surface and sintering the wafer and the bonder surface together to coalesce the powder into a porous mass, Dividing the sintered wafer into a plurality of separate subunits by forming a first series of cutouts extending at least to the level of the upper surface through the wafer in a plane perpendicular to the adhesive surface; A second series formed of less width than the first series of cuts, extending below the top surface of the adhesive surface to form channels in the adhesive surface, and mating with the first series of cuts Forming the cutouts of the, Filling the channels with a first insulating resin mass, Subsequently anodizing and manganizing the subunits to provide solid state capacitors having opposing electrodes exposed at the top surface, Electrically and mechanically bonding a conductive cathode plate to the upper surface; Filling a space between the adhesive face and the negative electrode plate formed by the first series of cuts with an insulating material, and Thereafter forming a third series of cuts through the cathode plate, resin mass, insulating material, and adhesive surface to mate with the second series of cuts. 7. The method of claim 6, further comprising: placing a grainy increase of the solid-state metal having a particle size larger than the powder particle size on the upper surface of the adhesive machine surface, and placing the wafer on the adhesive machine surface. Fusing said incremental portion to said upper surface prior to mounting thereon. 8. The method of claim 7, wherein the solid state metal comprises tantalum. A surface mountable solid state capacitor formed according to the method of claim 1. A surface mountable solid state capacitor formed according to the method of claim 2. A surface mountable solid state capacitor formed according to the method of claim 3. A surface mountable solid state capacitor formed according to the method of claim 4. A surface mountable solid state capacitor formed according to the method of claim 5. A surface mount solid state capacitor formed according to the method of claim 6. A surface mountable solid state capacitor formed according to the method of claim 7. A surface mount solid state capacitor formed according to the method of claim 8. A method of making an encapsulated, completed, surface mount solid state capacitor, A preform comprising metal anode and cathode plates, the plates having a plurality of solid state capacitors disposed therebetween, the capacitors being spaced apart from one another to form channels therebetween, the capacitors being Providing a prefabricated article having positive electrode ends fused to a positive electrode plate and negative electrode ends electrically and mechanically bonded to the negative electrode plate, and Injecting a liquid insulating resin into the channels using the plates as a mold of a mold, Curing the resin, and Then cutting the plates and resin along lines that coincide with the channels. A new article of manufacture comprising: a prefabricated article for the manufacture of surface mountable solid state capacitors, A metal anode plate, a metal cathode plate in a relationship spaced parallel to the anode plate, and a plurality of solid state capacitors disposed between the plates, Each of the capacitors includes a positive electrode fused to the positive electrode plate and a negative electrode electrically and mechanically bonded to the negative electrode plate, the capacitors being spaced apart from each other to form a network of channels in communication with the capacitors. A prefabricated article for manufacturing a surface mountable solid-state capacitor, characterized in that. 19. The article of manufacture of claim 18, wherein the channels are filled with a substantially cured insulating resin. Providing an integrated flat metal anode plate, A plurality of spaced apart solid state capacitors separated by channels, comprising: anode portions electrically and mechanically bonded to the anode plate and cathode portions spaced parallel to the anode plate and aligned in the same plane. Forming capacitors on the anode plate, Electrically and mechanically bonding an integral planar cathode plate to the cathode portions of the capacitors, and And a surface mountable solid state capacitor formed by the method then synchronously cutting through the anode and cathode plates along a cut line perpendicular to the plates and mating with the channels. 21. The article of manufacture of claim 20 formed by an additional step of substantially completely filling the channels with an insulating material prior to the cutting step. Providing a metal flat gluer surface, Applying a wafer of powdered solid-state capacitor forming metal to the bonder surface having a lower surface that mates with the bonder surface and an upper surface spaced parallel to the bonder surface, Incorporating the powder metal into the porous mass and sintering the wafer in contact with the adhesive surface to electrically and mechanically bond the wafer to the adhesive surface, Dividing the sintered wafer into a plurality of separate units along a first cutting line perpendicular to the adhesive machine surface; Anodizing the unit to provide an insulating coating, Forming a conductive counter electrode coating covering the upper surface on the insulating coating; Electrically and mechanically bonding a planar single metal anode plate to the upper surface to cover the plurality of units, and And forming a second series of cutouts perpendicular to the bonder surface through the anode plate and the bonder surface in registration with the first cutting lines.