KR100273392B1 - Heat treatment method of anode foil for AL capacitor - Google Patents
Heat treatment method of anode foil for AL capacitor Download PDFInfo
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- KR100273392B1 KR100273392B1 KR1019980021421A KR19980021421A KR100273392B1 KR 100273392 B1 KR100273392 B1 KR 100273392B1 KR 1019980021421 A KR1019980021421 A KR 1019980021421A KR 19980021421 A KR19980021421 A KR 19980021421A KR 100273392 B1 KR100273392 B1 KR 100273392B1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
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Abstract
Al 캐패시터를 제조하기 위한 에칭공정과 화성공정의 사이에서 실시되는 열처리에서 발생되는 뵘석구조의 H20성분을 제거 및 억제함으로써 Al 캐패시터의 특성을 향상시킬 수 있도록 하는 Al 캐패시터용 양극포일을 열처리하는 방법이 개시되어 있다. Al 캐패시터를 제조하는 공정인 에칭공정을 실행한 후 화성공정을 실행하기 전에 에칭공정을 통해 에칭된 알루미늄 포일을 히터가 설치된 전기로를 통과시킴으로써 열처리한 후 연속하여 인산수용액이 저장된 인산수조에 침적시킨다. 상기 인산수조에 열처리된 알루미늄 포일을 침적시키게 되면 열처리과정에서 알루미늄 포일의 표면에 생성된 산화피막인 뵘석구조(Al2O3·H20)의 H20가 제거되거나 또는 생성이 억제된다. 즉, 뵘석구조(Al2O3·H20)가 형성된 유전체인 산화피막에 PO4 3-이온이 흡착되어 H20성분이 Al2O3에 흡착되는 것을 방지하게 된다. 따라서, 유전체(Al2O3)에 H20성분이 제거되거나 생성이 억제되므로 AL 캐패시터의 누설전류가 감소되고 내구성이 향상되어 Al 캐패시터의 특성이 향상된다.Heat-treating the anode foil for Al capacitor to improve the characteristics of the Al capacitor by removing and suppressing H 2 O component of the boehmite structure generated during the heat treatment performed between the etching process and the chemical conversion process for manufacturing the Al capacitor. A method is disclosed. After performing the etching process, which is a process of manufacturing Al capacitors, and before performing the chemical conversion process, the aluminum foil etched through the etching process is subjected to heat treatment by passing through an electric furnace equipped with a heater, and subsequently immersed in a phosphate bath in which phosphate solution is stored. Let it dipping the aluminum foil heat-treated in the acid bath the H 2 0 is removed of the boehmite structure (Al 2 O 3 · H 2 0) oxidation film generated on the surface of the aluminum foil in the heat treatment process, or generated is suppressed. That is, PO 4 3- ions are adsorbed on the oxide film, which is a dielectric having a bovine structure (Al 2 O 3 · H 2 0), thereby preventing the H 2 O component from adsorbing onto Al 2 O 3 . Therefore, since the H 2 O component is removed or generation is suppressed in the dielectric Al 2 O 3 , the leakage current of the AL capacitor is reduced and the durability is improved, thereby improving the characteristics of the Al capacitor.
Description
본 발명은 Al 캐패시터에 관한 것으로, 보다 상세하게는 알루미늄 포일을 화성시키기 전에 실시되는 열처리공정을 개선하기 위한 Al 캐패시터용 양극포일을 열처리하는 방법에 관한 것이다.The present invention relates to an Al capacitor, and more particularly, to a method of heat treating an anode foil for Al capacitor to improve the heat treatment process is performed before the aluminum foil is converted.
일반적으로 알루미늄(Al) 캐패시터는 알루미늄을 전극으로 사용하며, 대향되는 두 전극판 사이에 유전체를 개재시켜 직류전압을 인가하면 에너지(전하)를 축적하는 기능을 갖는다. 상기 Al 캐패시터(electrolytic condenser)는 알루미늄박을 이용하여 제조되며, 에칭공정, 화성공정, 절단공정, 권취공정, 함침공정, 조립공정 및 재화성공정을 통해 Al 캐패시터가 제조된다. 즉, 상기 에칭공정은 압연된 알루미늄 원박의 평활면을 염산 등의 시약을 사용하여 전기화학적으로 표면을 조면화함으로써 그 실효면적을 증가시키는 공정이고, 화성공정은 화성액중에서 에칭박을 양극으로서 전기분해를 하여 전기화학적으로 알루미늄박의 표면에 유전체가 되는 산화 알루미늄 피막(Al2O3)을 생성하여 Al 캐패시터의 성능을 조절하는 공정이며, 절단공정은 화성공정에서 화성된 전극박을 제품의 용량에 맞도록 일정한 규격으로 절단하는 공정이다. 그리고 권취공정은 절단공정에서 일정한 규격으로 절단된 전극박에 인출단자를 접속한 후 음극박과 전해지를 넣어 동심원이 되도록 감는 공정이고, 함침공정은 권취한 소자에 전해액을 넣는 공정으로 전해액은 양극박과 음극박의 표면에 침투 밀착하여 양극박 및 음극박의 정전용량이 최대가 되도록 함과 동시에 양극산화 피막의 결함부분을 수복하는 기능을 한다. 조립공정은 함침공정에서 전해액에 함침된 소자가 이미 캐패시터로서의 기능을 가지므로 대기 상태에 방치해 두면 전해액이 증발 또는 흡습되어 캐패시터로서의 기능이 저하되므로 이를 방지하기 위하여 금속 케이스에 넣어 밀봉하게 되며, 재화성 공정은 조립공정에서 조립된 캐패시터에 정격전압을 인가함으로써 캐패시터의 기능을 안정화시키는 공정이다.In general, aluminum (Al) capacitors use aluminum as an electrode, and have a function of accumulating energy (charge) when a DC voltage is applied through a dielectric between two opposite electrode plates. The Al capacitor (electrolytic condenser) is manufactured by using an aluminum foil, Al capacitor is manufactured through an etching process, a chemical conversion process, a cutting process, a winding process, an impregnation process, an assembly process and a regeneration process. That is, the etching process is to increase the effective area by electrochemically roughening the surface of the rolled aluminum foil using a reagent such as hydrochloric acid, and the chemical conversion process uses the etching foil as an anode in the chemical solution. Decomposition produces electrochemically aluminum oxide film (Al 2 O 3 ), which is a dielectric on the surface of aluminum foil, to control the performance of Al capacitors. It is a process of cutting to a certain standard to fit. In the winding process, the lead terminal is connected to the electrode foil cut to a certain standard in the cutting process, and the cathode foil and the electrolytic cell are put in a concentric circle. The impregnation process is a process of putting the electrolyte in the wound element. It penetrates and adheres to the surface of the negative electrode foil to maximize the capacitance of the positive electrode foil and the negative electrode foil, and at the same time serves to repair the defective portion of the anodized film. In the assembly process, the element impregnated with the electrolyte in the impregnation process already has a function as a capacitor, so if it is left in the standby state, the electrolyte is evaporated or absorbed and the function of the capacitor is degraded. The chemical conversion process is a process of stabilizing the function of a capacitor by applying a rated voltage to the capacitor assembled in the assembly process.
상기와 같은 Al 캐패시터의 제조공정을 이루는 에칭공정(10)에서 압연된 알루미늄 원박의 평활면을 염산 등의 시약을 사용하여 전기화학적으로 표면을 조면화함으로써 그 실효면적을 증가시키게 되며, 상기 에칭공정(10) 다음에는 열처리(20)를 실시한 후 화성공정(30)을 실행하게 된다. 그런데, 종래에는 도 1에서 나타낸 바와 같이, 에칭공정(10)을 실행한 알루미늄 캐패시터용 양극포일을 화성공정(30)을 실행하기전에 열처리(20)를 하기 위하여 전기로(22)에 설치된 히터(24)에 알루미늄 포일(12)을 통과시킴으로서 알루미늄 포일(12)에 고온의 열을 인가한다. 상기와 같은 종래의 열처리(20)를 공기중에서 실시하기 때문에 알루미늄 포일(12)의 표면에는 알루미늄이 공기 및 공기중의 수분과 반응을 하여 산화피막인 Al2O3·H20의 뵘석(Boehmite)의 구조를 형성하게 된다. 상기 뵘석구조인 Al2O3·H20의 산화피막은 H20에 의해 화성공정(20)중의 화성용 전해액 혹은 소자구성시의 구동용 전해액의 H20성분과 결합하고자 하는 친수성이 증대하게 되며, 유전체피막의 수화작용(Hydration)현상으로 유전체의 결함 및 누설전류가 증대하고 내구성이 감소되는 문제점이 있다.The effective surface of the aluminum foil rolled in the etching process 10 forming the Al capacitor as described above is electrochemically roughened using a reagent such as hydrochloric acid to increase its effective area, and the etching process (10) Next, after performing the heat treatment 20, the chemical conversion process 30 is performed. However, conventionally, as shown in FIG. 1, a heater installed in the electric furnace 22 in order to heat-treat the aluminum capacitor positive electrode foil that has undergone the etching process 10 before performing the chemical conversion process 30 ( The high temperature heat is applied to the aluminum foil 12 by passing the aluminum foil 12 through 24. Since the conventional heat treatment 20 is performed in air, aluminum is reacted with air and moisture in the air on the surface of the aluminum foil 12 to form Al 2 O 3 · H 2 0 as an oxide film (Boehmite). ) To form a structure. Oxide film of the boehmite structure, the Al 2 O 3 · H 2 0 is the hydrophilicity to be combined with H 2 0 component of the drive electrolytic solution for the time of the electrolytic solution or the device configuration for the chemical conversion in the chemical conversion step 20 by the H 2 0 increase As a result of the hydration phenomenon of the dielectric film, there is a problem in that defects and leakage current of the dielectric material are increased and durability is reduced.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 Al 캐패시터를 제조하기 위한 에칭공정과 화성공정의 사이에서 실시되는 열처리에서 발생되는 뵘석구조의 H20성분을 제거 및 억제함으로써 Al 캐패시터의 특성을 향상시킬 수 있도록 하는 Al 캐패시터용 양극포일을 열처리하는 방법을 제공하는데 있다.The present invention has been made to solve the above problems, an object of the present invention is to remove the H 2 O component of the boehmite structure generated in the heat treatment carried out between the etching process and the chemical conversion process for producing the Al capacitor and The present invention provides a method of heat-treating an anode foil for Al capacitor which can improve the characteristics of an Al capacitor by suppressing it.
도 1은 종래의 알루미늄 캐패시터용 양극포일의 열처리 공정을 나타낸 도면이다.1 is a view showing a heat treatment process of a conventional anode foil for aluminum capacitors.
도 2는 본 발명에 따른 알루미늄 캐패시터용 열처리 공정을 나타낸 도면이다.2 is a view showing a heat treatment process for an aluminum capacitor according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
50 : 알루미늄 포일 60 : 전기로50: aluminum foil 60: electric furnace
62 : 히터 70 : 인산수조62: heater 70: phosphate tank
80 : 롤러80: roller
상기 목적을 달성하기 위하여 본 발명은 Al 캐패시터의 제조공정을 이루는 에칭공정과 화성공정에 있어서, 상기 에칭공정과 화성공정의 사이에 에칭된 알루미늄 포일을 전기로에 설치된 고온의 열을 발생시키는 히터의 사이로 통과시키는 단계; 그리고 상기 히터의 사이로 통과한 알루미늄 포일을 인산수용액이 저장된 인산수조에 침적시키는 단계를 추가로 구성시키는 것을 특징으로 하는 Al 캐패시터용 양극포일을 열처리하는 방법을 제공한다.In order to achieve the above object, the present invention provides an aluminum capacitor etched between an etching process and a chemical conversion process in an etching process and a chemical conversion process, which forms a high temperature heat installed in an electric furnace. Passing through; And it provides a method of heat-treating the anode foil for Al capacitors, further comprising the step of immersing the aluminum foil passed between the heaters in the phosphate tank in which the phosphate solution is stored.
본 발명에 의하면, Al 캐패시터를 제조하는 공정인 에칭공정을 실행한 후 화성공정을 실행하기 전에 에칭공정을 통해 에칭된 알루미늄 포일을 히터가 설치된 전기로를 통과시킴으로써 열처리한 후 연속하여 인산수용액이 저장된 인산수조에 침적시킨다. 상기 인산수조에 열처리된 알루미늄 포일을 침적시키게 되면 열처리과정에서 알루미늄 포일의 표면에 생성된 산화피막인 뵘석구조(Al2O3·H20)의 H20가 제거되거나 또는 생성이 억제되어 화성공정에서 특성이 좋은 유전체층이 형성된다.According to the present invention, after performing the etching process, which is a process of manufacturing Al capacitor, and before performing the chemical conversion process, the aluminum foil etched through the etching process is heat-treated by passing through an electric furnace equipped with a heater, and the phosphoric acid aqueous solution stored therein is continuously Immerse in the tank. Wherein when the acid bath the heat-treated thereby immersing the aluminum foil in the H 2 0 the removal of the oxide coating of boehmite structure (Al 2 O 3 · H 2 0) formed on the surface of the aluminum foil in the heat treatment process, or generated is suppressed Mars In the process, a dielectric layer having good characteristics is formed.
이하 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.
도 2는 본 발명에 따른 알루미늄 캐패시터용 열처리 공정을 나타낸 도면이다.2 is a view showing a heat treatment process for an aluminum capacitor according to the present invention.
도 2를 참조하여 Al 캐패시터용 양극포일을 열처리하는 방법을 설명하면, 먼저, 에칭공정, 화성공정, 절단공정, 권취공정, 함침공정, 조립공정 및 재화성공정등으로 이루어지는 Al 캐패시터의 제조공정중에서, 상기 에칭공정(100)을 실행한 후 에칭된 알루미늄 포일(50)을 전기로(60)에 설치된 고온의 열을 발생시키는 히터(62)의 사이로 통과시키게 된다(단계110). 상기 열처리(110)에서 전기로(60)의 내부에는 450℃∼550℃의 고온의 열을 발생시키는 히터(62)가 설치되고, 상기 전기로(60)의 근접부에는 인산수용액(H3PO4)이 저장된 인산수조(70)가 설치된다. 그리고, 상기 전기로(60)의 근접부 및 인산수조(70)의 내측과 상측에는 알루미늄 포일(50)을 공급하는 롤러(80)가 설치되어 있다. 상기 열처리(110) 다음에는 열처리된 알루미늄 포일(50)을 인산수조(70)에 침적을 시킨다(단계115). 상기 인산처리(115)에서 알루미늄 포일(50)은 인산수조(70)에 5분∼10분정도 동안 침적을 시키며, 인산수조(70)에 저장된 인산수용액의 농도는 1∼5%/50∼80℃가 된다.Referring to FIG. 2, a method of heat-treating an anode capacitor for Al capacitor will be described. First, in the manufacturing process of an Al capacitor including an etching process, a chemical conversion process, a cutting process, a winding process, an impregnation process, an assembly process, and a regeneration process, etc. After performing the etching process 100, the etched aluminum foil 50 is passed between the heaters 62 that generate the high temperature heat installed in the electric furnace 60 (step 110). In the heat treatment 110, a heater 62 is generated inside the electric furnace 60 to generate high temperature heat of 450 ° C. to 550 ° C., and an aqueous phosphate solution (H 3 PO) is disposed in the vicinity of the electric furnace 60. 4 ) the phosphate tank 70 is stored is installed. In addition, a roller 80 for supplying the aluminum foil 50 is provided in the vicinity of the electric furnace 60 and the inner side and the upper side of the phosphate tank 70. After the heat treatment 110, the heat-treated aluminum foil 50 is deposited in the phosphate tank 70 (step 115). In the phosphoric acid treatment 115, the aluminum foil 50 is deposited in the phosphoric acid tank 70 for about 5 to 10 minutes, and the concentration of the aqueous phosphoric acid solution stored in the phosphoric acid tank 70 is 1 to 5% / 50 to 80. It becomes ° C.
일 실시예를 통해 설명하면, 에칭공정(100)을 통해 표면이 에칭된 알루미늄 포일(50)은 전기로(60)에 설치된 히터(62)를 통과함으로써 열처리(110)를 하게 된다. 상기 열처리에 의해 알루미늄 포일(50)의 표면에는 Al2O3·H20의 뵘석구조가 형성된다. 상기 뵘석구조를 이루는 H20는 유전체의 결함을 증대시키고 누설전류가 증가되는 원인이 되므로 H20를 제거하거나 또는 H20의 생성을 억제하기 위해 인산수조(70)의 인산수용액에 침적시킨다(115). 상기 인산수용액에 알루미늄 포일(50)이 침적되면 인산수용액의 인산입자가 알루미늄 포일(50)의 표면에 달라붙어 H20의 생성을 억제하거나 방지하게 된다.In one embodiment, the aluminum foil 50 whose surface is etched through the etching process 100 passes through the heater 62 installed in the electric furnace 60 to perform the heat treatment 110. By the above heat treatment, Al 2 O 3 · H 2 0 is formed on the surface of the aluminum foil 50, a boehmite structure. H 2 0 forming the boehmite structure, thereby increasing the defect of the dielectric and immersed in aqueous solution of phosphoric acid in the phosphoric acid bath (70) for it can cause increased leakage currents remove H 2 0, or inhibit the production of H 2 0 (115). When the aluminum foil 50 is deposited in the aqueous solution of phosphoric acid, phosphate particles of the aqueous solution of phosphoric acid adhere to the surface of the aluminum foil 50 to suppress or prevent the production of H 2 O.
이상 설명에서 알 수 있는 바와 같이, 본 발명은 Al 캐패시터를 제조하는 공정인 에칭공정을 실행한 후 화성공정을 실행하기 전에 에칭공정을 통해 에칭된 알루미늄 포일을 히터가 설치된 전기로를 통과시킴으로써 열처리한 후 연속하여 인산수용액이 저장된 인산수조에 침적시킨다. 상기 인산수조에 열처리된 알루미늄 포일을 침적시키게 되면 열처리과정에서 알루미늄 포일의 표면에 생성된 산화피막인 뵘석구조(Al2O3·H20)의 H20가 제거되거나 또는 생성이 억제된다. 즉, 뵘석구조(Al2O3·H20)가 형성된 유전체인 산화피막에 PO4 3-이온이 흡착되어 H20성분이 Al2O3에 흡착되는 것을 방지하게 된다. 따라서, 유전체(Al2O3)에 H20성분이 제거되거나 생성이 억제되므로 AL 캐패시터의 누설전류가 감소되고 내구성이 향상되어 Al 캐패시터의 특성이 좋아된다.As can be seen from the above description, the present invention after the heat treatment by performing an etching process, which is a process for manufacturing Al capacitors, and then performing the chemical conversion process to heat the aluminum foil etched through the etching process through an electric furnace equipped with a heater Subsequently, the phosphate solution is deposited in a stored phosphate bath. Let it dipping the aluminum foil heat-treated in the acid bath the H 2 0 is removed of the boehmite structure (Al 2 O 3 · H 2 0) oxidation film generated on the surface of the aluminum foil in the heat treatment process, or generated is suppressed. That is, PO 4 3- ions are adsorbed on the oxide film, which is a dielectric having a bovine structure (Al 2 O 3 · H 2 0), thereby preventing the H 2 O component from adsorbing onto Al 2 O 3 . Therefore, since the H 2 O component is removed or generation is suppressed in the dielectric Al 2 O 3 , the leakage current of the AL capacitor is reduced and the durability is improved, thereby improving the characteristics of the Al capacitor.
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019980021421A KR100273392B1 (en) | 1998-06-10 | 1998-06-10 | Heat treatment method of anode foil for AL capacitor |
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| KR1019980021421A KR100273392B1 (en) | 1998-06-10 | 1998-06-10 | Heat treatment method of anode foil for AL capacitor |
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