KR100272512B1 - Storage capacity structure of tft-lcd - Google Patents
Storage capacity structure of tft-lcd Download PDFInfo
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- KR100272512B1 KR100272512B1 KR1019940017318A KR19940017318A KR100272512B1 KR 100272512 B1 KR100272512 B1 KR 100272512B1 KR 1019940017318 A KR1019940017318 A KR 1019940017318A KR 19940017318 A KR19940017318 A KR 19940017318A KR 100272512 B1 KR100272512 B1 KR 100272512B1
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- South Korea
- Prior art keywords
- storage capacitor
- gate electrode
- tft
- lcd
- insulating substrate
- Prior art date
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- 238000003860 storage Methods 0.000 title claims abstract description 31
- 239000003990 capacitor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000000059 patterning Methods 0.000 abstract description 5
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 7
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
제1도는 TFT-LCD 어레이의 등가회로도.1 is an equivalent circuit diagram of a TFT-LCD array.
제2도는 종래의 스토리지 캐패시터의 단면도.2 is a cross-sectional view of a conventional storage capacitor.
제3도는 본 발명의 스토리지 캐패시터의 단면도.3 is a cross-sectional view of a storage capacitor of the present invention.
제4도는 종래와 본 발명에 의한 스토리지 캐패시터 단면 비교도.4 is a cross-sectional view of a storage capacitor according to the prior art and the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 투명절연기판 2a : 제1게이트전극1 transparent insulating substrate 2a first gate electrode
2b : 제2게이트전극 3 : 절연막2b: second gate electrode 3: insulating film
4 : 화소전극4: pixel electrode
본 발명은 TFT-LCD에 관한 것으로 특히, 스토리지 캐패시터의 값을 개구율의 손실없이 증가시켜 화질을 개선하기에 적당하도록 한 TFT-LCD의 스토리지 캐패시터 구조에 관한 것이다.TECHNICAL FIELD The present invention relates to a TFT-LCD, and more particularly, to a storage capacitor structure of a TFT-LCD in which a value of a storage capacitor is increased without loss of an aperture ratio and suitable for improving image quality.
우선, TFT-LCD 어레이의 등가회로를 도시한 제1도를 설명하면 다음과 같다.First, a first diagram showing an equivalent circuit of a TFT-LCD array will be described.
도면상에 일정방향, 일정 간격으로 형성된 Gn-1, Gn, Gn+1은 어드레스선을 나타내며 상기 어드레스선과 수직되고 일정 간격으로 형성된 Dn-1, Dn, Dn+1은 화상신호가 공급되는 데이터선을 나타낸 것이다.In the drawing, G n-1 , G n , G n + 1 formed at a constant direction and at regular intervals represent an address line, and D n-1 , D n , D n + 1 formed at regular intervals perpendicular to the address line are images The data line to which a signal is supplied is shown.
그리고, 상기 어드레스선과 데이터선의 교차되는 지점에 복수개의 화소영역과 각각의 화소영역에 대응하여 박막트랜지스터가 형성된다.A thin film transistor is formed at a point where the address line and the data line cross each other to correspond to the plurality of pixel regions and each pixel region.
또한, 표시소자로 액정을 사용할때는 다음 어드레스까지 액정의 구동전압을 유지하기 위한 스토리지 캐패시터(Cst)와 공통전극인 액정캐패시터(CLC)가 연결되고, 상기 박막트랜지스터의 게이트전극은 어드레스선에, 소오스전극은 데이터선에, 드레인 전극은 화소전극에 접속되어 TFT-LCD 어레이의 등가회로를 구성한다.In addition, when a liquid crystal is used as a display element, a storage capacitor C st for maintaining a driving voltage of the liquid crystal to a next address and a liquid crystal capacitor C LC as a common electrode are connected, and a gate electrode of the thin film transistor is connected to an address line. The source electrode is connected to the data line and the drain electrode is connected to the pixel electrode to form an equivalent circuit of the TFT-LCD array.
그리고, 제2도에 도시한 종래의 스토리지 캐패시터의 단면도를 이용하여 스토리지 캐패시터의 구조를 설명하면 다음과 같다.The structure of the storage capacitor will now be described using the cross-sectional view of the conventional storage capacitor shown in FIG. 2.
종래의 스토리지 캐패시터의 구조는 투명절연기판(1)상에 게이트전극(2), 절연막(3), 그리고 화소전극(4)이 패터닝되어 이루어진다.The structure of a conventional storage capacitor is formed by patterning a gate electrode 2, an insulating film 3, and a pixel electrode 4 on a transparent insulating substrate 1.
또한, 상기 구조에 따른 스토리지 캐패시터의 제조방법은 투명절연기판(1)상에 게이트전극(2)이 패터닝되어 형성되고 전면에 절연막(3)이 증착되며, 상기 절연막(3)상에 하소전극(4)이 상기 게이트전극(2)의 패턴형식으로 패터닝되어 스토리지 캐패시터를 완성한다.In addition, the manufacturing method of the storage capacitor according to the above structure is formed by patterning the gate electrode 2 on the transparent insulating substrate 1, the insulating film 3 is deposited on the front surface, the calcination electrode ( 4) is patterned in the pattern form of the gate electrode 2 to complete the storage capacitor.
그러나, 종래의 TFT-LCD의 스토리지 캐패시터는 다음 어드레스의 신호가 인가되기전까지 구동전압을 유지시키므로 소요면적이 크고, 대용량을 가지면 좋으나, 소요면적이 커지면 개구율이 작아지고, 화면의 특성이 나빠지는 문제점이 있었다.However, the conventional storage capacitor of the TFT-LCD maintains the driving voltage until the next address signal is applied, so that the required area is large and has a large capacity. However, when the required area is large, the aperture ratio decreases and the screen characteristics deteriorate. There was this.
본 발명은 상술한 문제점을 해결하기 위하여 안출한 것으로 종래의 스토리지 캐패시터가 차지하는 면적과 동일하면서도 스토리지 캐패시터의 용량을 확대하고 개구율의 변화가 없으면서도 화면의 특성이 개선된 TFT-LCD의 스토리지 캐패시터의 구조를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and the structure of the storage capacitor of the TFT-LCD which is the same as the area occupied by the conventional storage capacitor but which expands the capacity of the storage capacitor and improves screen characteristics without changing the aperture ratio The purpose is to provide.
이상에서 상술한 목적을 달성하기 위한 본 발명의 TFT-LCD의 스토리지 캐패시터 구조는 투명절연기판상에 일정 간격으로 분할되어 형성된 제1게이트전극과, 상기 제1게이트전극을 감싸며 굴곡지게 형성되는 제2게이트전극과, 전면에 형성된 절연막과, 상기 절연막위에 상기 제2게이트전극의 패턴으로 형성된 화소전극으로 구성함을 특징으로 한다.The storage capacitor structure of the TFT-LCD of the present invention for achieving the above object is a first gate electrode formed by dividing at a predetermined interval on the transparent insulating substrate, and the second formed to be bent to surround the first gate electrode A gate electrode, an insulating film formed on the front surface, and a pixel electrode formed on the insulating film in the pattern of the second gate electrode are characterized in that the configuration.
이하, 첨부된 제3도를 참조하여 본 발명의 TFT-LCD의 스토리지 캐패시터 구조를 설명하면 다음과 같다.Hereinafter, the storage capacitor structure of the TFT-LCD of the present invention will be described with reference to the accompanying FIG.
우선, 본 발명의 스토리지 캐패시터의 구조는 투명절연기판(1)상에 제1게이트전극(2a)이 분할되어 형성되고, 전면에 제2게이트전극(2b), 절연막(3), 그리고 화소전극(4)이 패터닝되어 이루어진다.First, the structure of the storage capacitor of the present invention is formed by dividing the first gate electrode 2a on the transparent insulating substrate 1, and the second gate electrode 2b, the insulating film 3, and the pixel electrode (on the front surface). 4) is made by patterning.
또한, 상기 구조에 따른 스토리지 캐패시터의 제조방법은 투명절연기판(1)상에 도전층으로 제1게이트전극(2a)을 증착한후, 일정 간격을 가지도록 분할하여 패터닝하고 전면에 도전층으로 제2게이트전극(2b)을 증착한후 상기 제1게이트전극(2a)을 감싸도록 식각하여 형성하고 전면에 절연막(3)을 증착한다.In addition, in the method of manufacturing a storage capacitor according to the above structure, after depositing the first gate electrode 2a as a conductive layer on the transparent insulating substrate 1, the pattern is divided and patterned to have a predetermined interval and the conductive layer is formed on the front surface. After the 2-gate electrode 2b is deposited, the second gate electrode 2b is formed by etching to surround the first gate electrode 2a, and the insulating film 3 is deposited on the entire surface.
그리고 상기 절연막(3)상에 도전층인 화소전극(4)을 증착하고 상기 제2게이트 전극의 패터닝형식으로 패터닝하여 스토리지 캐패시터를 완성한다.The pixel electrode 4, which is a conductive layer, is deposited on the insulating layer 3 and patterned in the patterning manner of the second gate electrode to complete a storage capacitor.
이어서, 제4도는 종래와 본 발명에 대한 스토리지 캐패시터 단면 비교도로써, 제2도 A와 제3도의 B를 비교한 것이다.4 is a cross-sectional view of a storage capacitor according to the related art and the present invention, which compares FIG. 2 with FIG.
여기서, 종래인 제2도의 A에서는 캐패시터 단면적이 S인 반면에, 본 발명인 제3도의 B에서는 캐패시터 단면적이 S + △S임을 알 수 있다.Here, in the conventional A of FIG. 2, the capacitor cross-sectional area is S, whereas in FIG. 3B of the present invention, the capacitor cross-sectional area is S + ΔS.
그러므로, 본 발명의 TFT-LCD의 스토리지 캐패시터 구조는 종래의 스토리지 캐패시터 단면적(S)보다 본 발명의 스토리지 캐패시터 단면적(S + △S)이 더 넓으며, 따라서, 종래진 스토리지 캐패시터(Cst)보다 △C=ε△S/d만큼 더 커진 본 발명의 스토리지 캐패시터를 얻을 수 있다.Therefore, the storage capacitor structure of the TFT-LCD of the present invention has a larger storage capacitor cross-sectional area (S + ΔS) of the present invention than the conventional storage capacitor cross-sectional area (S), and therefore, is larger than the conventional storage capacitor (C st ). It is possible to obtain the storage capacitor of the present invention larger by ΔC = εΔS / d.
즉, 스토리지 캐패시터의 형성영역은 동일하되 표면적을 증가시킴으로써 용량을 확대하고 개구율의 변화없이 화면의 특성을 개선하는 효과가 있다.That is, the formation area of the storage capacitor is the same, but the surface area is increased, thereby increasing the capacity and improving the characteristics of the screen without changing the aperture ratio.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017318A KR100272512B1 (en) | 1994-07-18 | 1994-07-18 | Storage capacity structure of tft-lcd |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940017318A KR100272512B1 (en) | 1994-07-18 | 1994-07-18 | Storage capacity structure of tft-lcd |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960006058A KR960006058A (en) | 1996-02-23 |
| KR100272512B1 true KR100272512B1 (en) | 2000-11-15 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019940017318A KR100272512B1 (en) | 1994-07-18 | 1994-07-18 | Storage capacity structure of tft-lcd |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR100603284B1 (en) * | 2002-10-22 | 2006-07-20 | 삼성에스디아이 주식회사 | Electroluminescent display panel wherein capacitance is increased |
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1994
- 1994-07-18 KR KR1019940017318A patent/KR100272512B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960006058A (en) | 1996-02-23 |
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