KR100269606B1 - Particle riding device of etching apparatus for fabricating semiconductor - Google Patents

Particle riding device of etching apparatus for fabricating semiconductor Download PDF

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KR100269606B1
KR100269606B1 KR1019970066899A KR19970066899A KR100269606B1 KR 100269606 B1 KR100269606 B1 KR 100269606B1 KR 1019970066899 A KR1019970066899 A KR 1019970066899A KR 19970066899 A KR19970066899 A KR 19970066899A KR 100269606 B1 KR100269606 B1 KR 100269606B1
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wafer
chamber
cleaning
robot arm
etching
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KR1019970066899A
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Korean (ko)
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KR19990048255A (en
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박윤성
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like

Abstract

PURPOSE: A particle eliminator of an etcher for manufacturing a semiconductor is provided to eliminate particles and residual gas generated in an etch process, by cleaning a wafer in a cleaning chamber having a plurality of nozzles for spraying N2 gas before and after the etch process. CONSTITUTION: The wafer(3) is cleaned in the chamber(5). Pincers(13) rotating at a predetermined angle is installed in a side of a robot arm. The robot arm transfers the wafer to the inside of the chamber to change the position of the wafer inside the chamber. A wafer support unit fixedly supports the wafer which is rotated and moved. A spray nozzle(11) sprays cleaning gas to the surface of the wafer fixedly supported by the wafer support unit. An exhaust pipe(21) exhausts the cleaning gas sprayed from the spray nozzle to the exterior of the chamber, installed in the lower portion of the chamber.

Description

반도체 제조용 식각장치의 파티클 제거기{Particle riding device of etching apparatus for fabricating semiconductor}Particle riding device of etching apparatus for fabricating semiconductor

본 발명은 반도체 제조용 식각장치의 파티클 제거기에 관한 것으로 더욱 상세하게는 웨이퍼를 식각하는 식각과정 전·후에 N2가스를 분사하는 노즐이 다 수개 형성된 세정 챔버내에서 웨이퍼의 표면에 잔류하는 파티클 및 잔류 반응성 가스를 제거하는 반도체 제조용 식각장치의 파티클 제거기에 관한 것이다.The present invention relates to a particle remover of an etch apparatus for semiconductor manufacturing. More specifically, particles and residues remaining on the surface of a wafer in a cleaning chamber in which a plurality of nozzles for injecting N 2 gas are formed before and after etching the wafer. The present invention relates to a particle remover of an etching apparatus for manufacturing a semiconductor for removing a reactive gas.

일반적으로 반도체 공정이 점차 고집적화됨에 따라 웨이퍼의 표면에 잔류하는 파티클 및 잔류 반응성 가스에 대한 처리가 중요시되고 있다. 특히, 웨이퍼를 식각하는 식각작업시 발생하는 파티클은 식각 챔버내에 웨이퍼가 로딩 또는 언로딩되며 N2가스를 사용한 정화펌핑작업을 수행하여 파티클을 제거하나 일단 웨이퍼에 부착된 파티클을 완전히 제거하는데 어려움이 따른다.In general, as semiconductor processes become increasingly integrated, treatment of particles and residual reactive gases remaining on the surface of the wafer is becoming important. Particularly, particles generated during etching of wafers are loaded or unloaded into the etching chamber and purged with N 2 gas to remove particles, but it is difficult to completely remove particles once attached to the wafer. Follow.

이러한 종래의 식각장치는 크게 웨이퍼 로딩부와, 식각 챔버 그리고 웨이퍼 언로딩부로 구성된다.The conventional etching apparatus is largely composed of a wafer loading portion, an etching chamber and a wafer unloading portion.

웨이퍼가 로딩되기전에 공기중에 부유하던 파티클이 웨이퍼에 부착되고 이러한 상태에서 식각이 진행되면 파티클이 부착된 부위가 언더에치(under etch)되어 쇼트(Short)가 발생한다.Particles suspended in the air before the wafer is loaded is attached to the wafer and if the etching proceeds in this state, the particles are attached to the under-etched (short) occurs.

또한 컨택홀 공정과 같이 다결정 실리콘 식각(Poly etch), 산화막 식각 등이 연속되는 공정의 경우 다결정 실리콘 식각 후 웨이퍼가 언로딩되는 과정에서 후이물이 발생하여 산화막 식각시 언더에치에 의한 실리콘기판에 단락(Open)이 발생한다.In addition, in the case of a process in which polycrystalline silicon etching or oxide film etching is performed continuously, such as a contact hole process, a foreign material is generated during wafer unloading after polycrystalline silicon etching. A short occurs.

한편 식각작업 후 잔류 반응성 가스가 웨이퍼에 부착되는 경우에는 공정흐름의 정체를 유발하여 이에 따른 이차반응이 일어난다.On the other hand, if the residual reactive gas is attached to the wafer after the etching operation, causing the process flow is stagnant, a secondary reaction occurs.

그러나, 종래에는 식각작업시 발생하는 파티클 및 잔류 반응성 가스를 제거하기 위한 처리장치가 별도로 형성되지 않아 웨이퍼의 불량율 증가에 의하여 수율이 저하되는 문제점이 있다.However, in the related art, since a treatment apparatus for removing particles and residual reactive gas generated during an etching operation is not separately formed, a yield decreases due to an increase in defect rate of a wafer.

본 발명의 목적은 식각공정 전과 후에 다 수개의 N2가스를 분사하는 노즐이 형성된 세정 챔버에서 웨이퍼를 세척하여 식각작업시 생성되는 파티클 및 잔류 반응성 가스를 제거하는 반도체 제조용 식각장치의 파티클 제거기를 제공하는 데 있다.Disclosure of Invention An object of the present invention is to provide a particle remover of an etching apparatus for semiconductor manufacturing, which removes particles and residual reactive gases generated during etching by cleaning a wafer in a cleaning chamber in which nozzles for spraying a plurality of N 2 gases are formed before and after an etching process. There is.

따라서, 본 발명은 상기의 목적을 달성하고자, 웨이퍼의 표면을 식각하는 식각장치에 있어서, 일측단에 웨이퍼를 일시고정하는 집게가 형성되어 웨이퍼를 이송하는 로봇암과, 상기 로봇암이 출입하는 입구가 형성된 챔버와, 상기 챔버의 내측 상부면에 다 수개 형성되어 삽입된 웨이퍼측으로 세정가스를 분사하는 분사노즐과, 상기 챔버안쪽 양측에 형성되어 이송된 웨이퍼를 고정하며 상기 노즐방향으로 위치조절하는 웨이퍼 지지수단과, 상기 챔버의 하측단에 형성되어 챔버내의 공정가스를 배출하는 배출관으로 구성되어 식각작업의 전·후에 세정작업을 실시하는 것을 특징으로 한다.Accordingly, the present invention, in order to achieve the above object, in the etching apparatus for etching the surface of the wafer, a clamp for temporarily fixing the wafer is formed on one side end of the robot arm for transporting the wafer, and the entrance to the robot arm in and out A chamber in which a plurality of chambers are formed, an injection nozzle for injecting a cleaning gas to the inserted wafer side, and a plurality of wafers which are formed on both sides of the chamber and fixed in the nozzle direction, and are positioned in the nozzle direction. A support means and a discharge pipe formed at the lower end of the chamber to discharge the process gas in the chamber are characterized in that the cleaning operation is performed before and after the etching operation.

도 1은 본 발명의 파티클 제거기를 도시한 정면도이고,1 is a front view showing a particle remover of the present invention,

도 2는 본 발명의 파티클 제거기를 도시한 측면도이고,2 is a side view showing the particle remover of the present invention,

도 3은 본 발명의 파티클 제거기에 의한 웨이퍼 세정작업을 도시한Figure 3 shows a wafer cleaning operation by the particle remover of the present invention

사용상태도이다.It is a state of use.

* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1 : 파티클 제거기, 3 : 웨이퍼,1: particle remover, 3: wafer,

5 : 챔버, 7 : 로봇암,5: chamber, 7: robot arm,

9 : 입구, 11 : 분사노즐,9: inlet, 11: injection nozzle,

13 : 집게부, 15 : 지지축,13: tongs, 15: support shaft,

17 : 클램프, 19 : 개구부,17: clamp, 19: opening,

21 : 배출관.21: discharge pipe.

이하, 첨부된 도면을 참조하여 본 발명을 설명하면 다음과 같다.Hereinafter, the present invention will be described with reference to the accompanying drawings.

도 1과 도 2는 본 발명의 파티클 제거기를 도시한 정면도와 측면도이다.1 and 2 are front and side views showing the particle remover of the present invention.

웨이퍼(3)를 식각하기 전과 식각한 후에 웨이퍼(3)를 세정하는 파티클 제거기(1)에 의하여 웨이퍼(3)가 세정된다.The wafer 3 is cleaned by a particle remover 1 which cleans the wafer 3 before and after etching the wafer 3.

상기 파티클 제거기(1)는 일측에 웨이퍼(3)를 안착한 로봇암(7)이 출입하는 개폐가능한 입구(9)가 형성되고 내부에 다 수개의 분사노즐(11)이 설치되는 챔버(5)와, 상기 웨이퍼(3)를 챔버(5)내에 고정하는 웨이퍼 지지수단으로 이루어진다.The particle remover 1 has a chamber 5 in which an opening and closing inlet 9 for entering and exiting the robot arm 7 seating the wafer 3 is formed at one side thereof, and a plurality of injection nozzles 11 are installed therein. And wafer support means for fixing the wafer 3 into the chamber 5.

상기 로봇암(7)의 일측에는 웨이퍼(3)를 고정하는 집게부(13)가 형성되고 이러한 집게부(13)는 로봇암(7)을 축으로 90°각도로 회전한다.One side of the robot arm 7 is formed with a forceps 13 for fixing the wafer 3, such forceps 13 rotate the robot arm 7 at an angle of 90 ° about the axis.

따라서 상기 집게부(13)에 부착된 웨이퍼(3)도 90°각도로 회전한다.Therefore, the wafer 3 attached to the forceps 13 also rotates at an angle of 90 degrees.

한편, 상기 분사노즐(11)은 로봇암(7)에 장착된 웨이퍼(3) 방향으로 세정가스가 30 ~ 65°각도로 입사되도록 형성됨이 바람직하다.On the other hand, the injection nozzle 11 is preferably formed so that the cleaning gas is incident at an angle of 30 ~ 65 ° toward the wafer 3 mounted on the robot arm (7).

또한 상기 웨이퍼 지지수단은 챔버(5)내의 양측벽에 각각 형성되고 길이가 임의로 조절되는 지지축(15)과, 상기 지지축(15)의 끝단에 형성되어 삽입된 웨이퍼(3)를 사이에 개재하는 클램프(17)로 이루어진다.In addition, the wafer support means is interposed between the support shaft 15, which is formed on both side walls of the chamber 5, the length of which is arbitrarily adjusted, and the wafer 3 formed and inserted into the end of the support shaft 15, respectively. It consists of a clamp 17.

이때 상기 지지축(15)은 도 3에서 도시된 바와같이 일정길이만큼 길이가 조절되어 양측의 클램프(17)가 상호 맞닿도록하여 클램프(17) 사이에 끼워진 웨이퍼(3)를 일시고정한다.In this case, as shown in FIG. 3, the length of the support shaft 15 is adjusted by a predetermined length so that the clamps 17 on both sides contact each other to temporarily fix the wafer 3 sandwiched between the clamps 17.

이러한 상기 클램프(17)의 중앙부에는 개구부(19)를 형성하므로써 상기 분사노즐(11)에서 분사된 세정가스가 개구부(19)를 통하여 노출된 웨이퍼(3)면에 전달되어 웨이퍼(3)의 표면을 세정하도록 한다.By forming the opening portion 19 in the center of the clamp 17, the cleaning gas injected from the injection nozzle 11 is transferred to the surface of the wafer 3 exposed through the opening 19 so that the surface of the wafer 3 is exposed. To clean.

이때 상기 세정가스는 불활성기체인 N2가스를 사용하는 것이 바람직하다.At this time, it is preferable to use N 2 gas which is an inert gas as the cleaning gas.

한편, 상기 챔버(5)의 저부에서 다 수개로 분기된 후 하나로 연결되는 배출관(21)이 형성되어 세정가스에 의하여 제거된 파티클과 잔류 반응성 가스가 펌핑되어 제거된다.On the other hand, the discharge pipe 21 is formed by branching to a plurality of branches at the bottom of the chamber (5) is connected to one, the particles and residual reactive gas removed by the cleaning gas is pumped out.

본 발명의 웨이퍼 세정과정을 알아보면 다음과 같다.Looking at the wafer cleaning process of the present invention as follows.

도면을 참조하면 식각작업이 실시되기 전의 웨이퍼(3)가 로봇암(7)의 집게부(13)에 장착되어 파티클 제거기(1)의 챔버(5)내로 인입된다.Referring to the drawings, the wafer 3 before the etching operation is mounted on the tongs 13 of the robot arm 7 and drawn into the chamber 5 of the particle remover 1.

상기 챔버(5) 일측에 형성된 입구(9)를 통하여 웨이퍼(3)를 안착한 로봇암(7)이 챔버(5)내에 위치한 상태에서 집게부(13)를 90°각도로 회전시키므로써 이에 장착된 웨이퍼(3)도 90°각도로 회전한다.The robot arm 7 seated on the wafer 3 through the inlet 9 formed at one side of the chamber 5 is rotated by 90 ° angle in the state where the robot arm 7 is positioned in the chamber 5. The wafer 3 also rotates at an angle of 90 degrees.

이러한 상태에서 챔버(5)내의 양측벽에 형성된 클램프(17)의 지지축(15)을 상기 클램프(17)와 대향되도록 위치한 웨이퍼(3) 방향으로 소정길이만큼 늘려주므로써 상기 웨이퍼(3)가 양측의 클램프(17) 사이에 개재되도록 한다.In such a state, the support shaft 15 of the clamp 17 formed on both side walls of the chamber 5 is extended by a predetermined length in the direction of the wafer 3 positioned to face the clamp 17, so that the wafer 3 is on both sides. Is interposed between the clamps (17).

이렇게 클램프(17) 사이에 웨이퍼(3)가 일시고정되고 로봇암(7)이 챔버(5) 외측으로 이송된 후 상기 챔버(5)의 내측 상부면에 다 수개 형성된 분사노즐(11)을 통하여 세정가스를 웨이퍼(3)측으로 분사한다.The wafer 3 is temporarily fixed between the clamps 17 and the robot arm 7 is transferred to the outside of the chamber 5, and then, through the injection nozzles 11 formed on the inner upper surface of the chamber 5. The cleaning gas is injected to the wafer 3 side.

이때, 분사된 세정가스는 클램프(17)의 개구부(19)를 통하여 클램프(17) 사이에 끼워진 웨이퍼(3)에 유입되어 표면에 잔류하는 파티클을 제거한다.At this time, the injected cleaning gas flows into the wafer 3 sandwiched between the clamps 17 through the openings 19 of the clamps 17 to remove particles remaining on the surface.

이렇게 웨이퍼(3)의 표면에서 제거된 파티클 및 세정가스는 상기 챔버(5)내의 저부에 형성된 배출관(21)을 통하여 펌핑되어 외부로 방출된다.The particles and the cleaning gas removed from the surface of the wafer 3 are pumped through the discharge pipe 21 formed at the bottom of the chamber 5 and discharged to the outside.

상기와 같이 파티클이 제거된 웨이퍼(3)는 상술한 바와는 역순으로 로봇암(7)에 웨이퍼(3)가 장착되어 식각장치내로 이송되므로써 식각작업이 실시된다.As described above, the wafer 3 from which the particles have been removed is etched by the wafer 3 mounted on the robot arm 7 and transferred into the etching apparatus in the reverse order as described above.

전술한 세정작업은 식각작업이 실시된 후의 웨이퍼(3)에도 동일하게 적용됨은 물론이다.It goes without saying that the above cleaning operation is equally applied to the wafer 3 after the etching operation is performed.

상기에서 상술된 바와 같이, 본 발명은 식각공정 전과 후에 다 수개의 N2가스를 분사하는 노즐이 형성된 세정 챔버에서 웨이퍼를 세척하여 식각작업시 생성되는 파티클 및 잔류 반응성 가스를 제거하므로써 웨이퍼의 불량율을 저하시켜 수율을 향상시키는 잇점이 있다.As described above, the present invention removes the defect rate of the wafer by removing the particles and residual reactive gas generated during the etching process by cleaning the wafer in a cleaning chamber in which nozzles for spraying a plurality of N 2 gases are formed before and after the etching process. There is an advantage of lowering the yield.

Claims (3)

웨이퍼의 세정이 진행되는 챔버와;A chamber in which cleaning of the wafer is performed; 일측에 소정 각도로 회전하는 집게부가 형성되어 상기 챔버 내부로 상기 웨이퍼를 이송시켜 상기 챔버 내부에서 상기 웨이퍼의 위치를 변화시키는 로봇암과;A robot arm configured to rotate at a predetermined angle on one side to transfer the wafer into the chamber to change the position of the wafer within the chamber; 상기 챔버 내부에서 회전되어 위치가 변화된 상기 웨이퍼를 지지고정하는 웨이퍼 지지수단과;Wafer support means for supporting the wafer rotated inside the chamber to change its position; 상기 웨이퍼 지지수단에 의해 지지고정된 상기 웨이퍼 표면으로 세정가스를 분사하는 분사노즐과;An injection nozzle for injecting a cleaning gas to the surface of the wafer held by the wafer support means; 상기 챔버의 저부에 형성되어 상기 분사노즐에서 분사된 상기 세정가스를 상기 챔버 외부로 배출하는 배출관으로 이루어져 상기 웨이퍼의 식각 전·후에 세정작업을 실시하는 것을 특징으로 하는 반도체 제조용 식각장치의 파티클 제거기.And a discharge pipe which is formed at a bottom of the chamber and discharges the cleaning gas injected from the injection nozzle to the outside of the chamber to perform cleaning before and after etching the wafer. 청구항 1에 있어서, 상기 웨이퍼 지지수단은,The method according to claim 1, wherein the wafer support means, 상기 챔버내의 내부 양측벽에 각각 설치되며 수평방향으로 길이조절되는 지지축과;Support shafts each of which is installed on both inner walls of the chamber and are adjusted in a horizontal direction; 상기 지지축의 일측단에 수직방향으로 형성되어 상기 웨이퍼가 사이에 개재되며 내부에 개구부가 형성되어 상기 웨이퍼가 분사되는 상기 세정가스에 노출되도록 하는 클램프로 구성되는 것을 특징으로 하는 반도체 제조용 식각장치의 파티클 제거기.Particles of an etching apparatus for semiconductor manufacturing, characterized in that formed in a vertical direction at one end of the support shaft is interposed between the wafer and the opening is formed therein to expose the cleaning gas to the wafer is injected Eliminator. 청구항 1에 있어서,The method according to claim 1, 상기 로봇암의 집게부는 상기 챔버 내부에서 90。 각도로 회전하는 것을 특징으로 하는 반도체 제조용 식각장치의 파티클 제거기.Particle eliminator of the etching apparatus for semiconductor manufacturing, characterized in that the tongs of the robot arm is rotated at an angle of 90 ° inside the chamber.
KR1019970066899A 1997-12-09 1997-12-09 Particle riding device of etching apparatus for fabricating semiconductor KR100269606B1 (en)

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KR100452422B1 (en) * 2001-12-28 2004-10-12 동부전자 주식회사 Polishing Apparatus by Etching Gas

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JPH04120728A (en) * 1990-09-12 1992-04-21 Hitachi Ltd Etching device
JPH05121393A (en) * 1991-10-25 1993-05-18 Ryoden Semiconductor Syst Eng Kk Spin etcher

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Publication number Priority date Publication date Assignee Title
KR20140145701A (en) * 2013-06-14 2014-12-24 삼성디스플레이 주식회사 Method of forming an organic light emitting structure and method of manufacturing an organic light emitting display device
KR102108174B1 (en) * 2013-06-14 2020-05-11 삼성디스플레이 주식회사 Method of forming an organic light emitting structure and method of manufacturing an organic light emitting display device

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