KR100267992B1 - Electrochromic device and method for fabricating the same - Google Patents

Electrochromic device and method for fabricating the same Download PDF

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KR100267992B1
KR100267992B1 KR1019970013365A KR19970013365A KR100267992B1 KR 100267992 B1 KR100267992 B1 KR 100267992B1 KR 1019970013365 A KR1019970013365 A KR 1019970013365A KR 19970013365 A KR19970013365 A KR 19970013365A KR 100267992 B1 KR100267992 B1 KR 100267992B1
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layer
electrochromic
electrochromic device
electrode layer
transparent electrode
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KR1019970013365A
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Korean (ko)
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KR19980076587A (en
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이윤관
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구자홍
엘지전자주식회사
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/163—Operation of electrochromic cells, e.g. electrodeposition cells; Circuit arrangements therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

PURPOSE: An electrochromic device is provided to be capable of effectively blocking infiltration of water by improving a passivation layer. CONSTITUTION: An electrochromic device has a glass substrate(11), the first transparent electrode layer(12), a counterelectrode layer(13), a solid electrolyte layer(14), an electrochromic layer(15), the second transparent electrode layer(12), and a passivation layer(16). The layers(12-16) are sequentially formed on the glass substrate(11). The first and second transparent layers are made of indium tin oxide, the counterelectrode layer(13) is made of NiO or MgO, the solid electrolyte layer(14) is made of LiNbO3 or LiN, the electrochromic layer(15) is made of WO3 or ZrO3, and the passivation layer(16) is made of CNx.

Description

일렉트로크로믹 소자 및 그 제조방법{ELECTROCHROMIC DEVICE AND METHOD FOR FABRICATING THE SAME}ELECTROCHROMIC DEVICE AND METHOD FOR FABRICATING THE SAME}

본 발명은 디스플레이(display) 소자에 관한 것으로, 특히 일렉트로크로믹 소자(Electrochromic Device ; ECD) 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to display devices, and more particularly to an electrochromic device (ECD) and a method of manufacturing the same.

일반적으로,일렉트로크로믹 소자(ECD)는 일렉트로크로미즘(electrochromism)을 표시나 기억에 사용하는 소자로서, 스마트 윈도우(smart window), 디스플레이 소자, 마이크로-베터리(micro-battery) 등에 사용된다.In general, an electrochromic device (ECD) is an element that uses electrochromism for display or storage, and is used in a smart window, a display device, a micro-battery, and the like.

여기서, 일렉트로크로미즘이란 빛의 투과체인 일렉트로크로믹 재료에 전계를 가할 때, 전자를 잃거나 전자를 얻는 산화환원 반응 또는 전자 전이에 의해 빛의 흡수량이 증가하여 새로운 색이 나타나는 현상으로, 전계를 없애면 가역적으로 회복하게 된다.Here, electrochromism refers to a phenomenon in which when the electric field is applied to an electrochromic material, which is a light transmitting body, the absorption of light increases due to a redox reaction or an electron transition in which electrons are lost or gain electrons, and a new color appears. Doing so will reversibly recover.

도 1은 종래 기술에 따른 일렉트로크로믹 소자를 보여주는 구조단면도로서, 도 1에 도시된 바와 같이, 일렉트로크로믹 소자는 글래스 기판(1)과, 글래스 기판(1)상에 차례로 형성되는 제 1 투명전극층(2), 역전극층(counterelectrod layer)(3),고체전해질층(solidelectrolytelayer)(4),일렉트로크로믹층(electrochromic layer)(5), 그리고 제 2 투명전극층(2)으로 구성된다.FIG. 1 is a structural cross-sectional view showing an electrochromic device according to the prior art. As shown in FIG. 1, an electrochromic device is a glass substrate 1 and a first transparent formed on the glass substrate 1 in sequence. An electrode layer 2, a counterelectrod layer 3, a solid electrolyte layer 4, an electrochromic layer 5, and a second transparent electrode layer 2;

그리고, 상기와 같이 구성된 일렉트로크믹 소자 전면에 수 ㎛의 두께로 보호층(6)이 형성된다.Then, the protective layer 6 is formed to a thickness of several micrometers on the entire electrochromic element constructed as described above.

이때, 일렉트로크로믹 소자의 투명전극층(2)은 ITO(Induim Tin Oxide)으로 형성하고, 역전극층(3)은 NiO, MgO 등으로 형성하며, 고체 전해질층(4)은 LiNbO3, LiN 등으로 형성하고, 일렉트로크로믹층(5)은 WO3, ZrO2등으로 형성한다.In this case, the transparent electrode layer 2 of the electrochromic device is formed of indium tin oxide (ITO), the reverse electrode layer 3 is formed of NiO, MgO, or the like, and the solid electrolyte layer 4 is formed of LiNbO 3 , LiN, or the like. The electrochromic layer 5 is formed of WO 3 , ZrO 2, or the like.

그리고, 보호층(6)은 투명 에폭시 수지(epoxy resin)로 형성한다.The protective layer 6 is formed of a transparent epoxy resin.

이와 같이, 일렉트로크로믹 소자에 보호층(6)을 형성하는 이유는 다음과 같다.Thus, the reason for forming the protective layer 6 in the electrochromic element is as follows.

외부에서 일렉트로크로믹 소자에 약 ±3V의 전압을 걸면, 일렉트로크로믹 소자의 컬러링 및 브리칭(coloring ＆ bleaching)은 고체 전해질층(4)에서 양이온인 Li+의 이동에 의해서 아래 식으로 나타난다.When a voltage of about ± 3 V is applied to the electrochromic element from the outside, the coloring and bleaching of the electrochromic element is represented by the following equation due to the movement of Li + as a cation in the solid electrolyte layer 4.

LixWO3(coloring) ↔ WO3(bleaching) + XLi++ Xe- Li x WO 3 (coloring) ↔ WO 3 (bleaching) + XLi + + Xe -

상기의 식과 같이, 컬러링시에 포텐셸(potential)이 가해짐에 따라서, 대기중의 H2O가 H+, 1/2 H2O, 1/4 O2의 형태로 분해되면서 이중에서 H+가 투명전극층(2), 역전극층(3), 일렉트로크로믹층(5)쪽으로 침투하여 각 층내에 새로운 화합물을 형성시키거나, 각 층내의 O2와 재결합하여 버블(bubble)이나 크랙(crack)을 발생시킴으로써 Li+의 이동을 방해하게 된다.As described above, as the potential is applied during coloring, H 2 O in the atmosphere decomposes into H + , 1/2 H 2 O, 1/4 O 2 , and H + in double. Penetrates toward the transparent electrode layer (2), the reverse electrode layer (3), and the electrochromic layer (5) to form new compounds in each layer, or recombine with O 2 in each layer to form bubbles or cracks. Generated to interfere with the movement of Li + .

Li+의 이동을 방해하게 되면, 일렉트로크로믹 소자의 콘트라스트비(contrast ratio)를 감소시키고 응답시간을 증대시키며 층내의 버블과 마이크로 크랙의 발생으로 일렉트로크로믹 소자의 수명을 단축시킨다.Interfering with the movement of Li + reduces the contrast ratio of the electrochromic device, increases the response time, and shortens the life of the electrochromic device due to the generation of bubbles and microcracks in the layer.

그러므로, 이러한 현상을 방지하기 위하여 투명 에폭시 수지를 딥핑(dipping) 또는 스핀 코팅(spin coating) 방법으로 일렉트로크로믹 소자 전체에 형성하였다.Therefore, in order to prevent such a phenomenon, a transparent epoxy resin was formed on the entire electrochromic device by dipping or spin coating.

종래 기술에 따른 일렉트로크로믹 소자 및 그 제조방법에 있어서는 다음과 같은 문제점이 있었다.The electrochromic device and the manufacturing method thereof according to the prior art have the following problems.

첫째, 딥핑 또는 스핀 코팅 방법으로 투명 에폭시 수지인 보호층을 형성할 때, 수 ㎛이하의 두께로 조절하기가 어렵고 균일한 층을 형성할 수 없으며 대기중의 수분을 효과적으로 차단할 수 없다.First, when forming a protective layer of a transparent epoxy resin by a dipping or spin coating method, it is difficult to control to a thickness of several μm or less, it is not possible to form a uniform layer and effectively block moisture in the atmosphere.

둘째, 보호층이 수 ㎛의 두께로 두껍게 형성되므로 광투과도를 저하시키고 소자의 콘트라스트비를 감소시킨다.Second, since the protective layer is formed thick with a thickness of several micrometers, the light transmittance is lowered and the contrast ratio of the device is reduced.

본 발명은 이와 같은 문제점을 해결하기 위한 것으로, 보호층을 개선하여 물의 침투를 효과적으로 차단할 수 있는 일렉트로크로믹 소자 및 그 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide an electrochromic device and a method of manufacturing the same, which can effectively block the penetration of water by improving the protective layer.

본 발명의 다른 목적은 광투과도를 크게 향상시킬 수 있는 일렉트로크로믹 소자 및 그 제조방법을 제공하는데 있다.Another object of the present invention is to provide an electrochromic device and a method of manufacturing the same, which can greatly improve light transmittance.

도 1은 종래 기술에 따른 일렉트로크로믹 소자를 보여주는 구조단면도1 is a structural cross-sectional view showing an electrochromic device according to the prior art

도 2는 본 발명에 따른 일렉트로크로믹 소자를 보여주는 구조단면도Figure 2 is a structural cross-sectional view showing an electrochromic device according to the present invention

도 3은 CNX박막을 형성하기 위한 Cs+이온 건 스퍼터링 증착 시스템을 보여주는 도면FIG. 3 shows a Cs + ion gun sputter deposition system for forming a CN X thin film.

도면의 주요부분에 대한 부호의 설명Explanation of symbols for main parts of the drawings

11 : 기판 12 : 투명전극층11 substrate 12 transparent electrode layer

13 : 역전극층 14 : 고체 전해질층13: reverse electrode layer 14: solid electrolyte layer

15 : 일렉트로크로믹층 16 : 보호층15: electrochromic layer 16: protective layer

본 발명에 따른 일렉트로크로믹 소자 및 그 제조방법은 물의 침투를 차단할 수 있고 광투과도를 크게 향상시킬 수 있게 2 보호층을 CNX로 형성함에 그 특징이 있다.The electrochromic device and its manufacturing method according to the present invention are characterized by forming 2 protective layers of CN X so as to block the penetration of water and to greatly improve the light transmittance.

본 발명의 다른 특징은 보호층을 Cs+이온 건 스퍼터링 증착 시스템을 이용하여 형성하는데 있다.Another feature of the invention is the formation of a protective layer using a Cs + ion gun sputter deposition system.

본 발명의 또 다른 특징은 보호층의 두께를 약 500∼1000Å으로 형성하는데 있다.Another feature of the present invention is to form a thickness of the protective layer of about 500 ~ 1000Å.

상기와 같은 특징을 갖는 본 발명에 따른 일렉트로크로믹 소자 및 그 제조방법을 첨부된 도면을 참조하여 설명하면 다음과 같다.Referring to the accompanying drawings, an electrochromic device and a method for manufacturing the same according to the present invention having the above characteristics are as follows.

도 2는 본 발명에 따른 일렉트로크로믹 소자를 보여주는 구조단면도로서, 도 2에 도시된 바와 같이, 일렉트로크로믹 소자는 글래스 기판(11)과, 글래스 기판(11)상에 차례로 형성되는 제 1 투명전극층(12), 역전극층(counterelectrod layer)(13),고체전해질층(solidelectrolytelayer)(14),일렉트로크로믹층(electrochromic layer)(15), 제 2 투명전극층(12), 그리고 보호층(16)으로 구성된다.FIG. 2 is a structural cross-sectional view showing an electrochromic device according to the present invention. As shown in FIG. 2, an electrochromic device is formed of a glass substrate 11 and a first transparent formed sequentially on the glass substrate 11. Electrode layer 12, counterelectrod layer 13, solid electrolyte layer 14, electrochromic layer 15, second transparent electrode layer 12, and protective layer 16 It consists of.

이때, 제 1, 제 2 투명전극층(12)은 ITO(Induim Tin Oxide)으로 형성되고, 역전극층(13)은 NiO, MgO 등으로 형성되며, 고체 전해질층(14)은 LiNbO3, LiN 등으로 형성되고, 일렉트로크로믹층(15)은 WO3, ZrO2등으로 형성된다.In this case, the first and second transparent electrode layers 12 are formed of indium tin oxide (ITO), the reverse electrode layer 13 is formed of NiO, MgO, or the like, and the solid electrolyte layer 14 is formed of LiNbO 3 , LiN, or the like. The electrochromic layer 15 is formed of WO 3 , ZrO 2, or the like.

그리고, 보호층(16)은 CNX로 형성된다.The protective layer 16 is formed of CN X.

이와 같이, 본 발명의 구조는 종래와 동일하지만 보호층의 물질을 CNX로 형성된 것이 종래와 다르다.As described above, the structure of the present invention is the same as before, but the material of the protective layer formed of CN X is different from the conventional one.

보호층을 CNX로 형성하는 이유는 가시광선영역에서 90% 이상의 투과도를 가지고 있어 소자의 콘트라스트비에 영향을 주지 않으며, 구조가 치밀하여 보호층내로 수소가 존재하지 않아 물의 침투를 효과적으로 방지할 수 있기 때문이다.The reason why the protective layer is formed by CN X is that it has a transmittance of 90% or more in the visible light region and does not affect the contrast ratio of the device. Because there is.

이러한 특성을 갖는 CNX박막은 Cs+이온 건 스퍼터링 증착 시스템(Cs+Ion Gun Sputtering Deposition System)을 이용하여 형성한다.CN X thin film having such properties is formed by a Cs + ion gun sputtering deposition system (Cs + Sputtering Ion Gun Deposition System).

도 3은 CNX박막을 형성하기 위한 Cs+이온 건 스퍼터링 증착 시스템을 보여주는 도면으로서, 도 3의 시스템을 이용하여 본 발명에 따른 일렉트로크로믹 소자의 제조방법을 설명하면 다음과 같다.3 is a view showing a Cs + ion gun sputtering deposition system for forming a CN X thin film, a method for manufacturing an electrochromic device according to the present invention using the system of FIG.

먼저, 기판상에 제 1 투명 전극층, 역전극층, 전해질층, 일렉트로크로믹층, 제 2 투명 전극층을 차례로 형성하고, CNX박막을 형성하기 위한 Cs+이온 건 스퍼터링 증착 시스템의 고체 상태 세시움 이온 소스(soild state cesium ion source)로 부터 Cs+이온 빔(이때, Cs+이온 전류 밀도는 약 100mA/cm2이다.)이 그래파이트 타겟(graphite target)을 스퍼터링함으로써, 탄소 이온(C-)이 생성된다.First, a solid state cesium ion source of a Cs + ion gun sputtering deposition system for sequentially forming a first transparent electrode layer, a reverse electrode layer, an electrolyte layer, an electrochromic layer, and a second transparent electrode layer on a substrate and forming a CN X thin film A carbon ion (C − ) is produced by sputtering a graphite target with a Cs + ion beam (where Cs + ion current density is about 100 mA / cm 2 ) from a soiled state cesium ion source. .

이 탄소 이온은 전기장에 의해 기판쪽으로 가속되어 기판표면에서 CNX합성에 필요한 수 십∼수 백eV의 에너지를 가지고 홀 이온 건(Hall Ion Gun)으로부터 공급된 N+와 결합하여 CNX박막을 형성한다.The carbon ions are accelerated toward the substrate by an electric field and combine with the N + supplied from the Hall Ion Gun with energy of several tens to hundreds of eVs necessary for CN X synthesis at the substrate surface to form a CN X thin film. do.

이때, CNX박막은 약 500∼1000Å의 두께로 형성한다.At this time, the CN X thin film is formed to a thickness of about 500 to 1000 GPa.

일반적으로 종래의 CNX박막 형성 방법에서는 CNX박막내의 질소 함유량이 30∼40% 정도이지만 본 발명의 CNX박막 형성 방법은 최대 57% 정도까지 질소 함유가 가능함과 동시에 결정성 C3N4(β-C3N4)박막의 합성이 이루어질 수 있고 CNX박막의 경도(hardness)와 계수(modulus)에 영향을 미치는 CNX박막내 C≡N 삼중 결합의 분율도 상당히 증가시킬 수 있다.Generally, in the conventional CN X thin film forming method, the nitrogen content in the CN X thin film is about 30 to 40%, but the CN X thin film forming method of the present invention can contain nitrogen up to about 57% and at the same time crystalline C 3 N 4 ( β-C 3 N 4) may be made of thin film composite and percentage of my C≡N triple bond CN X thin film affects the hardness (hardness) and the coefficient (modulus) of the CN X thin film also it can significantly increase.

본 발명에 따른 일렉트로크로믹 소자 및 그 제조방법에 있어서는 다음과 같은 효과가 있다.The electrochromic device and the manufacturing method thereof according to the present invention have the following effects.

첫째, 보호층을 CNX으로 형성함으로써, 가시광선 영역에서 90% 이상의 광 투과도를 가지고 있어 소자의 콘트라스비에 영향을 주지 않는다.First, by forming the protective layer as CN X , it has a light transmittance of 90% or more in the visible light region and does not affect the contrast ratio of the device.

둘째, CNX으로 이루어진 보호층의 구조가 치밀하여 물의 침투를 효과적으로 차단할 수 있다.Second, the structure of the protective layer consisting of CN X can be effectively blocked the penetration of water.

셋째, Cs+이온 건 스퍼터링 증착 시스템을 이용하여 CNX으로 이루어진 보호층을 형성하므로 외관이 깨끗하고 제조공정이 단순하며 경제적이다.Third, since the protective layer made of CN X is formed using the Cs + ion gun sputtering deposition system, the appearance is clean, the manufacturing process is simple, and economical.

Claims (4)

역전극층, 전해질층, 일렉트로크로믹층을 갖는 일렉트로크로믹 소자에서,In an electrochromic device having a reverse electrode layer, an electrolyte layer, and an electrochromic layer, 기판;Board; 상기 역전극층, 전해질층, 일렉트로크로믹층을 샌드위칭하여 상기 기판상에 형성되는 투명 전극층;A transparent electrode layer formed on the substrate by sandwiching the reverse electrode layer, the electrolyte layer, and the electrochromic layer; 상기 투명 전극층을 포함한 전 표면상에 CNX로 이루어진 보호층으로 구성됨을 특징으로 하는 일렉트로크로믹 소자.Electrochromic device, characterized in that consisting of a protective layer consisting of CN X on the entire surface including the transparent electrode layer. 기판상에 제 1 투명 전극층을 형성하는 스텝;Forming a first transparent electrode layer on the substrate; 상기 제 1 투명 전극상에 역전극층, 전해질층, 일렉트로크로믹층을 차례로 형성하는 스텝;Sequentially forming a reverse electrode layer, an electrolyte layer, and an electrochromic layer on the first transparent electrode; 상기 일렉트로크로믹층상에 제 2 투명 전극층을 형성하는 스텝;Forming a second transparent electrode layer on the electrochromic layer; 상기 제 2 투명 전극층을 포함한 전 표면상에 CNX로 이루어진 보호층을 형성하는 스텝으로 이루어짐을 특징으로 하는 일렉트로크로믹 소자 제조방법.And forming a protective layer made of CN X on the entire surface including the second transparent electrode layer. 제 2 항에 있어서, 상기 보호층은 Cs+이온 건 스퍼터링 증착 시스템을 이용하여 형성함을 특징으로 하는 일렉트로크로믹 소자 제조방법.3. The method of claim 2, wherein the protective layer is formed using a Cs + ion gun sputter deposition system. 제 2 항에 있어서, 상기 보호층은 500∼1000Å의 두께로 형성함을 특징으로 하는 일렉트로크로믹 소자 제조방법.3. The method of claim 2, wherein the protective layer is formed to a thickness of 500 to 1000 GPa.
KR1019970013365A 1997-04-11 1997-04-11 Electrochromic device and method for fabricating the same KR100267992B1 (en)

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WO2019199012A1 (en) * 2018-04-09 2019-10-17 주식회사 엘지화학 Electrochromic film
WO2019199011A1 (en) * 2018-04-09 2019-10-17 주식회사 엘지화학 Electrochromic film

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JPH06250231A (en) * 1993-02-23 1994-09-09 Tonen Corp Electrochromic element

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JPH06250231A (en) * 1993-02-23 1994-09-09 Tonen Corp Electrochromic element

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Publication number Priority date Publication date Assignee Title
WO2019199012A1 (en) * 2018-04-09 2019-10-17 주식회사 엘지화학 Electrochromic film
WO2019199011A1 (en) * 2018-04-09 2019-10-17 주식회사 엘지화학 Electrochromic film

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