KR100264202B1 - Device of fabrication oxidation film - Google Patents

Device of fabrication oxidation film Download PDF

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KR100264202B1
KR100264202B1 KR1019970002444A KR19970002444A KR100264202B1 KR 100264202 B1 KR100264202 B1 KR 100264202B1 KR 1019970002444 A KR1019970002444 A KR 1019970002444A KR 19970002444 A KR19970002444 A KR 19970002444A KR 100264202 B1 KR100264202 B1 KR 100264202B1
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South Korea
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gas
cooling zone
wafer
oxide film
supplied
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KR1019970002444A
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Korean (ko)
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KR19980066744A (en
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박재우
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김영환
현대반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE: An apparatus for forming an oxide layer on a wafer is provided to improve a short life time of carriers by injecting an N2 gas to a cooling zone. CONSTITUTION: A heating coil(12) is installed at a side of a tube(10) of a reactive furnace in order to raise an inner temperature of the tube(10). A cooling zone(20) is installed at a lower side of the tube(10) in order to lower a temperature of a wafer(11). An H2 gas is supplied to the cooling zone(20) through an H2 gas control device(41). An N2 gas is supplied to the cooling zone(20) through an N2 gas control device(42). In addition, the H2 gas and the N2 gas are supplied to the cooling zone(20) by a pump(43). The pump(43) is installed between the H2 gas control device(41) or the N2 gas control device(42) and an injection hole(21). An exhaust hole(22) is formed in the cooling zone(20). An H2 sensor(23) is installed in the exhaust hole(22). A load lock(30) is connected with the cooling zone(20).

Description

웨이퍼 산화막 형성 장치Wafer oxide film forming apparatus

본 발명은 웨이퍼 산화막 형성 장치에 관한 것으로, 특히 웨이퍼 냉각시에 소량의 수소 개스를 공급하여 반도체 소자의 소수 캐리어의 활동 시간을 향상시키도록 한 웨이퍼 산화막 형성 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer oxide film forming apparatus, and more particularly, to a wafer oxide film forming apparatus in which a small amount of hydrogen gas is supplied during wafer cooling to improve the active time of minority carriers of a semiconductor device.

일반적으로 웨이퍼의 표면에 산화막을 형성하도록 하는 산화막 형성 장치는 반응로의 튜브에서 산화막이 형성된 웨이퍼를 쿨링 존(cooling zone)으로 이동시킨 다음 질소 개스 즉 N2개스를 공급하여 웨이퍼의 온도를 낮춤과 동시에 웨이퍼 표면의 이물질의 정화가 이루어진다.In general, an oxide film forming apparatus for forming an oxide film on the surface of a wafer moves a wafer formed with an oxide film from a tube of a reactor into a cooling zone, and then supplies nitrogen gas or N 2 gas to lower the temperature of the wafer. At the same time, foreign matter on the wafer surface is purged.

이와같은 종래의 웨이퍼 산화막 형성 장치를 제1도를 참조하여 설명하면 다음과 같다.The conventional wafer oxide film forming apparatus will be described with reference to FIG. 1 as follows.

제1도는 종래의 웨이퍼 산화막 형성 장치의 구성을 나타낸 도면이다.1 is a diagram showing the configuration of a conventional wafer oxide film forming apparatus.

제1도에 나타낸 바와같이 반응로의 튜브(10)의 측면에는 튜브(10) 내부의 온도를 상승시키기 위한 히팅 코일(12)이 설치되어 있다.As shown in FIG. 1, a heating coil 12 is provided on the side surface of the tube 10 of the reactor to increase the temperature inside the tube 10.

튜브(10)의 아래쪽에는 산화막 형성 공정이 완료된 웨이퍼(11)의 온도를 낮추기 위한 쿨링 존(20)이 구비되어 있으며, 또 쿨링 존(20)에는 N2개스를 공급하기 위한 N2주입구(21)와 반응이 이루어진 개스가 배출되도록 배개구(22)가 형성되어 있다.The lower part of the tube 10 is provided with a cooling zone 20 for lowering the temperature of the wafer 11 on which the oxide film forming process is completed, and an N 2 injection hole 21 for supplying N 2 gas to the cooling zone 20. The vent opening 22 is formed so that the gas reacted with) may be discharged.

이와같은 튜브(10)와 쿨링 존(20) 사이에는 웨이퍼(11)가 적재된 보트(13)의 왕래가 가능하도록 이루어져 있다.Between such a tube 10 and the cooling zone 20 is made possible to the coming and going of the boat 13 loaded with the wafer 11.

로드 락(load lock, 30)은 쿨링 존(20)에 연결되도록 설치되어 카세트(도면에는 도시하지 않았음)에 적재된 상태로 운반된 웨이퍼가 보트에 이송되어 적재되도록 이루어지며, 상술한 쿨링 존(20)처럼 N2개스가 공급되도록 이루어진다.The load lock 30 is installed to be connected to the cooling zone 20 so that a wafer carried in a state loaded in a cassette (not shown) is transferred to a boat and loaded, and the cooling zone described above. N 2 gas is supplied as in (20).

이와같은 종래의 산화막 형성 장치의 동작은, 반응로의 튜브(10) 내에서 웨이퍼(11)의 표면에 산화막이 형성되면 소정의 대기 시간을 가져서 웨이퍼의 온도를 700~800℃까지 내린 다음 쿨링 존(20)으로 이동시킨다.The operation of the conventional oxide film forming apparatus, when the oxide film is formed on the surface of the wafer 11 in the tube 10 of the reactor, has a predetermined waiting time to lower the temperature of the wafer to 700 ~ 800 ℃ and then cooling zone Go to (20).

이때 쿨링 존(20) 내부의 환경은 10PPM 정도의 02 개스 농도를 갖는 N2개스의 공급이 이루어져서 웨이퍼 표면의 산화막 형성이 억제된다.At this time, the environment inside the cooling zone 20 is supplied with N 2 gas having a concentration of 02 gas of about 10 PPM, thereby suppressing the formation of an oxide film on the wafer surface.

다음으로 웨이퍼를 냉각시켜서 온도를 낮춘 다음 로드 락(30)으로 이동시켜서 보트(13)에 적재된 웨이퍼(11)를 카세트로 언로딩(unloading)한다.Next, the wafer is cooled to lower the temperature and then moved to the load lock 30 to unload the wafer 11 loaded on the boat 13 into a cassette.

이와같은 로드 락(30)에도 쿨링 존(20)처럼 N2개스가 공급되어 웨이퍼 표면의 이물질을 제거하고, 또 로드 락(30) 내에 존재하는 02의 농도를 낮추어서 웨이퍼에 목적하지 않은 자연 산화막이 형성되는 것을 억제한다.N 2 gas is also supplied to the load lock 30 like the cooling zone 20 to remove foreign substances on the wafer surface, and lower the concentration of 02 present in the load lock 30 to produce an undesired natural oxide film on the wafer. Suppresses formation.

그러나 이와같은 종래의 웨이퍼 산화막 형성 장치는, 웨이퍼가 N2개스가 공급된 상태의 쿨링 존 또는 로드 락에서 냉각이 이루어질 때 기판을 구성하는 Si층과 산화막을 형성하는 SiO2층의 경계면에서 이루어지는 격자 결합에 질소(N)가 트랩(trap)되어 소수 캐리어의 수명을 단축시켜서 소자의 전기적 특성을 크게 떨어뜨리는 문제가 있다.However, such a conventional wafer oxide film forming apparatus has a lattice bond formed at the interface between the Si layer constituting the substrate and the SiO 2 layer forming the oxide film when the wafer is cooled in a cooling zone or a load lock in which N 2 gas is supplied. Nitrogen (N) is trapped to shorten the life of the minority carriers, thereby greatly reducing the electrical characteristics of the device.

따라서 본 발명은 웨이퍼의 냉각이 이루어지는 쿨링 존에 H2개스를 공급하여 N2개스와 치환이 이루어지도록 하여 Si층과 SiO2층의 경계면에서 이루어지는 격자 결합에 질소(N)가 트립되어 발생하는 소수 캐리어의 수명이 단축되는 것을 방지하도록 하는 목적이 있다.Therefore, in the present invention, H 2 gas is supplied to the cooling zone in which the wafer is cooled to be replaced with N 2 gas so that nitrogen (N) is tripped to the lattice bond formed at the interface between the Si layer and the SiO 2 layer. The purpose is to prevent the lifespan of the product from being shortened.

제1도는 종래의 웨이퍼 산화막 형성 장치의 구성을 나타낸 도면.1 is a diagram showing the configuration of a conventional wafer oxide film forming apparatus.

제2도는 본 발명의 웨이퍼 산화막 형성 장치의 구성을 나타낸 도면.2 is a diagram showing the configuration of a wafer oxide film forming apparatus of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 튜브 11 : 웨이퍼10 tube 11: wafer

12 : 히팅 코일 13 : 보트12: heating coil 13: boat

20 : 쿨링 존 21 : 주입구20: cooling zone 21: inlet

22 : 배기구 23 : H2검출 센서22: exhaust port 23: H 2 detection sensor

30 : 로드 락 41 : H2개스 제어 장치30: load lock 41: H 2 gas control unit

42 : N2개스 제어 장치 43 : 펌프42: N 2 gas control unit 43: pump

이와같은 목적의 본 발명은, 반도체 웨이퍼의 표면에 산화막의 형성이 이루어지는 반응로 튜브와, 형성이 이루어진 웨이퍼를 냉각시키기 위한 쿨링 존과, 외부에서 카세트를 통해 운반된 웨이퍼가 상기 쿨링 존 내부의 보트에 로딩되는 로드 락(LOAD LOCK)을 포함하여 이루어지는 웨이퍼 산화막 형성 장치의 반도체 웨이퍼의 표면에 산화막의 형성이 이루어지는 반응로 튜브와, 형성이 이루어진 웨이퍼를 냉각시키기 위한 쿨링 존과, 외부에서 카세트를 통해 운반된 웨이퍼가 상기 쿨링 존 내부의 보트에 로딩되는 로드 락(LOAK LOCK)을 포함하여 이루어지는 웨이퍼 산화막 형성 장치의 쿨링 존의 개스 주입구로 N2개스의 양을 조절하여 공급하는 N2개스 제어장치와, 상기 쿨링 존의 개스 주입구로 N2개스의 공급과 동시에 H2개스의 양을 조절하여 공급하는 H2개스 제어장치와, 상기 쿨링 존의 개스 배기구에 설치되어 공급된 상기 H2개스의 양을 검출하여 상기 H2개스 제어장치를 통해 공급되는 H2개스 공급량이 일정량을 유지하도록 하는 검출센서를 포함한다.According to the present invention, a reactor tube in which an oxide film is formed on a surface of a semiconductor wafer, a cooling zone for cooling the formed wafer, and a wafer transported through a cassette from the outside are boats in the cooling zone. A reactor tube in which an oxide film is formed on a surface of a semiconductor wafer of a wafer oxide film forming apparatus including a load lock loaded in the cooling chamber, a cooling zone for cooling the formed wafer, and an external cassette. An N 2 gas control device that supplies a regulated amount of N 2 gas to a gas inlet of a cooling zone of a wafer oxide film forming apparatus including a load lock in which the wafers are loaded into a boat inside the cooling zone; H to supply N 2 gas to the gas inlet of the cooling zone and to control the amount of H 2 gas at the same time 2 includes a detection sensor for the gas control unit and, H 2 gas supply quantity by detecting an amount of the cooling zone are installed on the gas exhaust port is supplied the H 2 gas supplied through the H 2 gas controller is to hold a predetermined amount do.

이와같이 이루어진 본 발명의 일실시예를 제2도를 참조하여 설명하면 다음과 같다.An embodiment of the present invention made as described above will be described with reference to FIG. 2.

제2도는 본 발명의 웨이퍼 산화막 형성 장치의 구성을 나타낸 도면이다.2 is a diagram showing the configuration of the wafer oxide film forming apparatus of the present invention.

제2도에 나타낸 바와같이, 반응로의 튜브(10)의 측면에는 튜브(10) 내부의 온도를 상승시키기 위한 히팅 코일(12)이 설치되어 있다.As shown in FIG. 2, a heating coil 12 for raising the temperature inside the tube 10 is provided on the side surface of the tube 10 of the reactor.

튜브(10)의 아래쪽에는 산화막 형성 공정이 완료된 웨이퍼(11)의 온도를 낮추기 위한 쿨링 존(20)이 구비되어 있다.The cooling zone 20 is provided below the tube 10 to lower the temperature of the wafer 11 on which the oxide film forming process is completed.

쿨링 존(20)에는 H2개스와 N2개스가 공급되도록 이루어지는데, H2개스는 H2개스 제어 장치(41)를 통해 공급량이 조절되도록 이루어지고, N2개스는 N2개스 제어장치(42)를 통해 공급되는 개스의 양이 조절되도록 이루어진다.The cooling zone 20 is supplied with H 2 gas and N 2 gas, the H 2 gas is made to adjust the supply amount through the H 2 gas control device 41, the N 2 gas (N 2 gas control device ( The amount of gas supplied through 42 is controlled.

이와같은 H2개스 제어 장치(41)를 통해 공급되는 H2개스의 양은 N2개스 제어 장치(42)를 통해 공급되는 N2개스의 5% 정도를 유지하게 된다.The amount of H 2 gas supplied through the H 2 gas control device 41 maintains about 5% of the N 2 gas supplied through the N 2 gas control device 42.

상술한 H2개스는 H2개스 제어 장치(41) 또는 N2개스 제어 장치(42)와 주입구(21) 사이에 설치된 펌프(43)에 의해 쿨링 존(20) 내의 각 부분으로 공급되도록 한다.The above-described H 2 gas is supplied to each part in the cooling zone 20 by the H 2 gas control device 41 or the pump 43 provided between the N 2 gas control device 42 and the injection port 21.

또 쿨링 존(20)에는 반응이 이루어진 개스가 배출되도록 배기구(22)가 형성되어 있으며, 배기구(22)에는 배출되는 개스에 포함되어 있는 H2의 양을 검출하기 위한 H2검출 센서(23)가 설치되어 있다.In addition, an exhaust port 22 is formed in the cooling zone 20 to discharge the reacted gas, and the exhaust port 22 includes an H 2 detection sensor 23 for detecting an amount of H 2 contained in the discharged gas. Is installed.

이와같은 튜브(10)와 쿨링 존(20) 사이에는 웨이퍼(11)가 적재된 보트(13)의 왕래가 가능하도록 이루어져 있다.Between such a tube 10 and the cooling zone 20 is made possible to the coming and going of the boat 13 loaded with the wafer 11.

로드 락(load lock, 30)은 쿨링 존(20)과 연결되도록 설치되어 웨이퍼가 적재된 카세트(도면에는 도시하지 않았음)가 로드 락(30)으로 운반되면, 웨이퍼는 카세트에서 보트(13)로 옮겨진다.The load lock 30 is installed to be connected to the cooling zone 20 so that when the cassette (not shown) loaded with the wafer is transported to the load lock 30, the wafer is moved from the cassette to the boat 13. Is moved to.

또 로드 락(30)에도 상술한 쿨링 존(20)처럼 N2개스의 공급이 이루어진다.In the load lock (30) is made in the supply of N 2 gas, as described above the cooling zone (20).

이와같은 종래의 산화막 형성 장치의 동작은, 반응로의 튜브(10) 내에서 웨이퍼(11)의 표면에 산화막이 형성되면 웨이퍼의 온도를 700~800℃까지 낮추기 위하여 일정 시간 대기하도록 한 다음 쿨링 존(20)으로 이동시킨다.In the operation of the conventional oxide film forming apparatus, when an oxide film is formed on the surface of the wafer 11 in the tube 10 of the reactor, the cooling zone is allowed to wait for a predetermined time to lower the temperature of the wafer to 700 to 800 ° C. Go to (20).

웨이퍼(11)가 적재된 보트(13)가 튜브(10) 내에서 쿨링 존(20)으로 이동하기 시작하면, H2개스 제어 장치(41)를 통해 H2개스를 쿨링 존(20) 내에 공급한다.When the boat 13 loaded with the wafer 11 starts to move to the cooling zone 20 in the tube 10, the H 2 gas is supplied into the cooling zone 20 through the H 2 gas control device 41. do.

이와같은 H2개스는 웨이퍼(11)의 온도가 500℃ 정도로 낮아지기 전에 공급이 시작되어 보트(13)의 상부에 적재된 웨이퍼(11)의 H2개스가 도달할 때까지 충분히 이루어진다.Such H 2 gas is sufficiently supplied until the temperature of the wafer 11 is lowered to about 500 ° C. until the H 2 gas of the wafer 11 loaded on the top of the boat 13 reaches.

이때 공급되는 H2개스의 양은 함께 공급되는 H2개스의 5% 정도로 이루어지며, 쿨링 존(20)의 배기구(22)에는 H2개스 검출 센서(23)가 부착되어 있어 공급된 H2개스의 양을 좀더 정확하게 검출하도록 이루어진다.At this time consists to about 5% of H 2 gas is the amount supplied with the H 2 gas to be supplied, a cooling zone 20. The H 2 gas supplied there is an exhaust port 22, the H 2 gas detection sensor 23 is attached to the It is made to detect the amount more accurately.

이와같이 소정량의 H2개스의 공급이 이루어지면 H2개스의 공급을 중지하고, N2개스를 공급하여 웨이퍼를 정화(purge)하고 온도를 낮춘 다음 보트(13)를 로드 락(30)으로 이동시켜서 웨이퍼(11)를 카세트로 언로딩(unloading)한다.In this way stops the supply of the predetermined amount of H 2 gas is completed, a H 2 gas supply, and then move the boat 13, purification of the wafer by supplying N 2 gas (purge) and lowering the temperature in the load lock 30 The wafer 11 is unloaded into a cassette.

이와같이 동작하는 본 발명의 작용은, 튜브(10)에서 산화막 형성 공정이 완료된 웨이퍼(11)가 쿨링 존(20)으로 이동하여 냉각되는 과정에서 웨이퍼(11)의 기판과 산화막 사이에서 질소 분자와 수소 분자의 상쇄 내지는 치환이 이루어져서 기판과 산화막 사이의 격자 결함 등에 질소 분자가 트랩되지 않도록 하는 것이다.The operation of the present invention operating in this way, the nitrogen molecules and hydrogen between the substrate and the oxide film of the wafer 11 in the process in which the wafer 11, the oxide film forming process is completed in the tube 10 is moved to the cooling zone 20 and cooled. Offset or substitution of molecules is performed so that nitrogen molecules are not trapped in lattice defects between the substrate and the oxide film.

따라서 본 발명은 웨이퍼의 냉각이 이루어지는 쿨링 존에 H2개스를 공급하여 N2개스와 치환이 이루어지도록 하여 Si층과 SiO2층의 경계면에서 이루어지는 격자 결합에 질소(N)가 트랩되어 소수 캐리어의 수명이 단축되는 것을 방지하도록 하는 효과가 있다.Therefore, in the present invention, H 2 gas is supplied to the cooling zone where the wafer is cooled to be replaced with N 2 gas so that nitrogen (N) is trapped in the lattice bond formed at the interface between the Si layer and the SiO 2 layer, and thus the lifetime of the minority carriers. There is an effect to prevent this shortening.

Claims (1)

반도체 웨이퍼의 표면에 산화막의 형성이 이루어지는 반응로 튜브와, 상기 산화막이 형성된 웨이퍼를 냉각시키기 위한 쿨링 존과, 외부에서 카세트를 통해 운반된 웨이퍼가 상기 쿨링 존 내부의 보트에 로딩되는 로드 락(LOAD LOCK)을 포함하여 이루어지는 웨이퍼 산화막 형성 장치에 있어서, 쿨링 존의 개스 주입구에 N2개스의 양을 조절하여 공급하는 N2개스의 제어장치와; 상기 쿨링 존의 개스 주입구에 N2개스의 공급과 동시에 H2개스의 양을 조절하여 공급하는 H2제어장치와; 상기 쿨링 존의 개스 배기구에 설치되어 공급된 상기 H2개스의 양을 검출하여 상기 H2개스 제어장치를 통해 공급되는 H2개스 공급량이 상기 H2개스의 5% 이하로 유지되도록 하는 검출센서를 포함하는 것이 특징인 웨이퍼 산화막 형성장치.A load lock in which a reactor tube in which an oxide film is formed on a surface of a semiconductor wafer, a cooling zone for cooling the wafer on which the oxide film is formed, and a wafer transported through a cassette from the outside are loaded into a boat inside the cooling zone. in LOCK) wafer oxide film-forming apparatus comprising the control device of the N 2 gas to control the amount of N 2 gas supplied to the gas inlet of the cooling zone and; An H 2 controller for controlling the amount of H 2 gas and simultaneously supplying N 2 gas to the gas inlet of the cooling zone; A detection sensor which is to detect the quantity of the cooling zone is provided in the gas exhaust port is supplied the H 2 in the gas H 2 gas supply amount which is supplied via the H 2 gas control apparatus is kept at 5% or less of the H 2 gas Wafer oxide film forming apparatus characterized in that it comprises.
KR1019970002444A 1997-01-28 1997-01-28 Device of fabrication oxidation film KR100264202B1 (en)

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04157748A (en) * 1990-10-22 1992-05-29 Shinko Electric Co Ltd Panel device for operation and monitoring at semiconductor treatment device
KR920022409A (en) * 1991-05-15 1992-12-19 제임스 조셉 드롱 Cooling device and cooling method for semiconductor wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04157748A (en) * 1990-10-22 1992-05-29 Shinko Electric Co Ltd Panel device for operation and monitoring at semiconductor treatment device
KR920022409A (en) * 1991-05-15 1992-12-19 제임스 조셉 드롱 Cooling device and cooling method for semiconductor wafer

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