KR100252217B1 - Base resin for photoresist using ultra-violet ray for fabrication of semiconductor device, its manufacturing method and photoresist using ultra-violet ray comprosing the base resin - Google Patents

Abstract

PURPOSE: A structural resin for producing photoresist used in far-UV exposure process of semiconductor production and photoresist composition containing the resin are provided to having sufficient transmissivity at relatively high 193nm in far-UV, good anti-etching property and clear contrast of patterns at the development of the semiconductor and are exposed by far-UV as light source of photolithography process. CONSTITUTION: The structural resin for producing photoresist used in far-UV exposure process comprises poly(di-t-butyl-norbornene-dicarboxylate) of formula 1 as a main chain (wherein R is hydrogen, alkyl groups having C1-C10 such as methyl, ethyl and the like, carbonyl, carboester groups; and n is natural number ranged from 1,000 to 1,000,000). The compound of formula 1 is obtained by reacting cyclopentane and acrylate, blending the resultant material with t-butylester, adding a catalyst having hydroxyl group, heating it to produce a di-t-butyl-norbornene-decarboxylate monomer and polymerizing the monomer. The resin can be exposed at the photolithography process by using far-UV as light source and is useful to produce semiconductor apparatus having a special transparent structure around 193nm wavelength of light source.

Description

Structural resin for composition of photoresist for exposure to ultraviolet rays for the manufacture of semiconductor devices, and manufacturing method thereof and photoresist composition for exposure to ultraviolet rays comprising the structural resin manufacturing method and photoresist using ultra-violet ray comprosing the base resin}

The present invention relates to a photoresist composition for far ultraviolet exposure photoresist composition for manufacturing a semiconductor device, a method of manufacturing the same, and a photoresist composition for far ultraviolet exposure including the structural resin, and more particularly, to light in a wavelength range of 193 nm. The present invention relates to a far-infrared exposure photoresist composition structural resin for producing a semiconductor device having a transparent structure, a manufacturing method thereof, and a far-resistance photoresist composition containing the structural resin.

Photolithography is a process of manufacturing semiconductor devices by applying a photoresist to a wafer, transferring a pattern as previously designed, and etching the electronic circuit appropriately according to the transferred pattern. It is one of the very important tasks to configure.

The photoresist used in the photolithography process serves to distinguish between the portion that should be etched and the portion that should not be etched in a subsequent etching process, and a photosensitive polymer is used, and the photosensitive polymer is ultraviolet (Ultra-). By the action of light such as violet, electron-beam or X-ray, it may be a material or composition that exhibits a change in solubility in a solvent by causing chemical and physical changes in a short time.

In particular, the photoresist used in the manufacture of semiconductor devices should be capable of realizing a micron or less micron, and is also a material whose decomposition characteristics are changed due to decomposition or crosslinking reaction caused by light energy. In the present invention, a photoresist having the above photosensitivity is uniformly applied to the surface of a wafer used for manufacturing a semiconductor device, and a mask having a predetermined pattern formed thereon is placed thereon. By irradiating light having a predetermined level or more energy to the photoresist on the wafer due to the selective transmission of the light by the mask according to the pattern. After photosensitization by irradiation of light, the photoresist exhibits a difference in solubility between the areas irradiated with light and the areas not irradiated with light due to chemical or physical changes due to light irradiation. Only the photoresist portion having solubility is removed, and the photoresist portion having low solubility is left unremoved so that the underlying wafer can be protected without being etched during the etching process by the remaining photoresist, thereby The pattern shown can be transferred onto the wafer as it is.

Photoresists can be roughly classified into negative photoresist and positive photoresist.

m 정도에 불과하여 단지 강한 부식액을 사용하는 공정이나, 집적도가 낮은 반도체장치의 제조용으로 사용되며, 고집적도 반도체장치 제조공장에서는 이용되지 못한다는 단점이 있다.Negative photoresist shows solubility difference by decreasing solubility while increasing molecular weight by reaction such as cross-linking and photodimerization by exposure, and remarkably improving thermal characteristics and chemical resistance. It was first commercialized compared to the positive photoresist. Commercially available negative photoresists include polyvinylcinnamate, cyclized rubber, bisarylazide, polyvinyl alcohol (PVA; Polyvinylalcohol), casein, gelatin (Gelatine) And ammonium dichromate. However, such conventional negative photoresists generally have a pattern swelling phenomenon during development, resulting in a resolution of 2-3.

It is only about m, it is used for the process of using a strong corrosion solution, or for manufacturing a low integration semiconductor device, and has a disadvantage in that it cannot be used in a high density semiconductor device manufacturing plant.

On the other hand, the positive photoresist is decomposed by exposure, the molecular scission (Chain Scission) and the like to increase the solubility shows a difference in solubility, and exhibits the characteristics opposite to the negative photoresist described above. Commercially available positive photoresists include novolac resins, deep ultraviolets, electron beams or X-rays in which diazonaphthoquinone and Novolac Resin are mixed for the near ultraviolet region. Polymethyl methacrylate (PMMA; Polymethylmethacrylate) type is mentioned. Positive photoresist, unlike negative photoresist, has less swelling, excellent etch resistance, and particularly high resolution and is mainly used in high-density semiconductor device manufacturing processes.

In particular, the light in the near-ultraviolet region as a light source uses an ultra-high pressure mercury lamp, and specifically, a G-line of 436 nm, an H-line of 405 nm, and an I-line of 365 nm. Since light rays with strong intensity can be obtained, it is often possible to use the photoresist even when the sensitivity of the photoresist is slightly low, and photoresist photosensitive to the ground line has a resolution of 0.45 to 0.5 ?? m, resulting in 4M DRAM. It is known that a pattern for manufacturing a semiconductor device of the present invention can be implemented, and a photoresist photosensitive to eye lines can realize a submicron pattern for manufacturing a semiconductor device up to about 16M DRAM.

On the other hand, the longer the wavelength, the more difficult it is to implement the fine line width under the influence of diffraction and interference between the entire film including the photoresist film, the oxide film and the like, so that the resolution of the pattern is increased to manufacture a highly integrated semiconductor device. For this purpose, it is preferable to use light in the far ultraviolet region having shorter wavelength or shorter wavelength than the near ultraviolet or mid-ultraviolet.

Recently, as the stepper for ultraviolet exposure has been applied to the manufacture of highly integrated semiconductor devices, the development of photoresist for far ultraviolet exposure is actively required, and the circle for securing the margin of resolution and depth of focus (DOF) is required. Photoresists for ultraviolet exposure have been developed, and examples of commercialized ones include poly-para- (thi-butyloxycarbonyloxy having a tert-buthyloxy-carbonyloxy group (t-BOC) as a protecting group. Photoresist made of a combination of styrene (poly-p- (t-butyloxy-carbonyloxy) styrene) and photoacid generator (Onium Salt), which also contains a thi-butyloxycarbonyloxy group as a protecting group. Polyvinyl hydroxy phenol (PVHP), including Krypton fluoride excimer laser (Kr) with strong intensity at 248 nm ypton Fluoride Eximer Laser) A composition in which a benzophenone-based photosensitive agent (PAC; Photo Active Cmpounds) is mixed with a photoresist for exposure and an improved novolak resin.

However, the conventional photoresist as described above is a semiconductor device in terms of productivity and resolution in the light absorption when applied to the light of 193nm wavelength, such as Argon Fluoride Eximer Laser (Argon Fluoride Eximer Laser) which is a recently developed and commercial light source It was found to be inappropriate for mass production.

In addition, a photoresist using an acrylic resin has been developed as a photoresist material capable of minimizing light absorption at 248 nm. However, since it exhibits fragility in etching, a separate post-treatment process or development of a photoresist is performed after development. There was a problem that the resin must be modified.

Therefore, there is still a need to develop a photoresist for far ultraviolet exposure that can be applied to an argon fluoride excimer laser generating a short wavelength of about 193 nm.

SUMMARY OF THE INVENTION An object of the present invention is to provide a structural resin for photoresist composition for ultra-violet exposure, which can be exposed using ultraviolet rays as a light source in a photolithography step in the process of manufacturing a semiconductor device.

Another object of the present invention is to provide a manufacturing method for producing a structural resin for composition for photoresist for far ultraviolet exposure that can be exposed using far ultraviolet rays.

Still another object of the present invention is to provide a photoresist composition for exposure to far ultraviolet rays, including a structural resin for photoresist composition for exposure to far ultraviolet rays that can be exposed using far ultraviolet rays.

Structural resin for photoresist composition for far ultraviolet light exposure that can be exposed using ultraviolet light as a light source in a photolithography process in the process for manufacturing a semiconductor device according to the present invention for achieving the above object is a poly It consists of resin which has (di-thi-butyl- norbornene-dicarboxylate) as a main chain.

In the above, R is hydrogen, methyl group, alkyl group having 1 to 10 carbon atoms, such as carbonyl group, carbonyl group, carboester group, n is a natural number of 1,000 to 1,000,000.

이다) 등과 같은 텅스텐과 몰리브덴의 염화물 또는 유기화합물들로 표현되는 찌글러촉매(Ziegler catalyst)로 이루어진 그룹 중에서 선택된 촉매를 사용하여 실온 내지 50℃의 범위의 온도의 균일중합반응조건 중에서 중합시키거나 또는 산화텅스텐, 산화몰리브덴, 산화레늄 및 이들의 2 이상의 혼합물로 이루어진 그룹 중에서 선택된 촉매를 사용하여 51 내지 120℃의 범위의 온도의 불균일중합반응조건 중에서 중합시켜서 수득된다.A method of preparing a resin having a poly (di-ti-butyl-norbornene-dicarboxylate) as a main chain as shown in Chemical Formula 1 is to react the cyclopentane and acrylate as shown in the following Chemical Formula 2, and to the reaction product. The di-thi-butyl-norbornene-dicarboxylate monomers of the following general formula (3) obtained by mixing the thi-butyl ester, adding a catalyst giving off a hydroxyl group, and the like, were prepared using WCl ₆ / AlEt ₃ , MoCl ₅ / SnCl ₄ , MoCl ₅ / SnEt ₃ , WAr (OR) ₂ CHR ′ wherein R ′ is an alkyl group having 1 to 4 carbon atoms, and Ar is

Or a polymer selected from the group consisting of Ziegler catalysts represented by chlorides or organic compounds of tungsten and molybdenum such as tungsten and the like, or polymerized under homogeneous polymerization conditions at a temperature ranging from room temperature to 50 ° C, or It is obtained by polymerization under heterogeneous polymerization conditions at a temperature in the range of 51 to 120 ° C using a catalyst selected from the group consisting of tungsten oxide, molybdenum oxide, rhenium oxide and mixtures of two or more thereof.

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group.

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group.

The above reaction is a kind of addition condensation reaction, and a strong base material such as sodium hydroxide may be used as a catalyst for producing a hydroxyl group, and this reaction may be understood to be well known to those skilled in the art.

In addition, the photoresist composition for far-ultraviolet exposure according to the present invention, 10 to 20% by weight of a resin having a poly (di-thi-butyl- norbornene-dicarboxylate) of the general formula (1) as a main chain resin, a photosensitive agent 5 to 10% by weight, 0.1 to 2% by weight of the additives and the remaining amount comprises an organic solvent.

The photosensitizer may be a quinone-based compound such as diazonaphthoquinone.

The organic solvents are ketones such as acetone, methyl ethyl ketone (MEK; Methyl Ethyl Ketone), cyclohexanone (Cyclohexnone) and isoamyl ketone, petroleum solvents such as xylene, One selected from the group consisting of acetates such as n-butylacetate and ethyl cellosolve acetate, ethyl lactate, and mixtures of two or more thereof.

In addition, the photoresist composition for far ultraviolet exposure may further include a sensitizer such as triazole or tetrazole to improve the contrast and resolution of the pattern to be transferred.

Hereinafter, the present invention will be described in detail with reference to specific examples.

In the photolithography step of manufacturing the semiconductor device according to the present invention, the structural resin for the photoresist composition for exposure to ultraviolet light that can be exposed using ultraviolet light as a light source is a poly (di-butyl-butyl) -Norbornene-dicarboxylate).

Formula 1

In the above, R is hydrogen, methyl group, alkyl group having 1 to 10 carbon atoms, such as carbonyl group, carbonyl group, carboester group, n is a natural number of 1,000 to 1,000,000.

The resin having the above-mentioned poly (di-thi-butyl-norbornene-dicarboxylate) as a main chain is a di-thi-butyl-norbornene-dicarboxylate monomer which is an olefinic monomer having at least one double bond. It is obtained by metathesis polymerization (Metathesis Polymerization), using a Ziegler catalyst is polymerized in the homogeneous polymerization reaction conditions carried out in the temperature conditions warmed to a temperature range of room temperature to 50 ℃ using a catalyst mainly consisting of metal oxides It can be obtained by polymerization in a heterogeneous polymerization reaction conditions carried out at a high temperature in the range of 51 to 120 ℃.

Such poly (di-thi-butyl-norbornene-dicarboxylate) has a non-conjugated double bond in the main chain, and the non-conjugated double bond increases the number of bonds in the main chain and thus resists corrosion during the etching process. The arousal may have more excellent structural properties, and also includes two or more thi-butoxy groups as protecting groups, and all of the thi-butoxy groups are desorbed after the photoreaction, so that the irradiated area and the light of the resin do not It is possible to further increase the solubility difference between the non-regions.

In addition, since the aliphatic ring is included in the main chain of the resin instead of the benzene nucleus, and the aliphatic ring contains the thi-butoxy group as a protecting group, a conventional thi-butyloxycarbonyloxy group (t-BOC; tert-buthyloxy-carbonyloxy of poly-p- (t-butyloxy-carbonyloxy) styrene, which is a protecting group, and onium salt, a photoacid generator. Polyvinyl hydroxyphenol (PVHP) containing a combination photoresist, a thi-butyloxycarbonyloxy group as a protecting group, and a krypton Fluoride Eximer Laser that emits light having a strong intensity at 248 nm Resin as a structural agent used in a composition in which a photoresist for exposure and an improved novolak resin are mixed with a benzophenone-based photosensitive agent (PAC; Photo Active Cmpounds) It includes a benzene nucleus, whereby in particular completely solve the problem exhibit strong light absorption at 193nm.

이다) 등과 같은 텅스텐과 몰리브덴의 염화물 또는 유기화합물들로 표현되는 찌글러촉매(Ziegler catalyst)로 이루어진 그룹 중에서 선택된 촉매를 사용하여 실온 내지 50℃의 범위의 온도의 균일중합반응조건 중에서 중합시켜서 수득할 수 있다.A method of preparing a resin having a poly (di-ti-butyl-norbornene-dicarboxylate) as a main chain as shown in Chemical Formula 1 is to react the cyclopentane and acrylate as shown in the following Chemical Formula 2, and to the reaction product. The di-thi-butyl-norbornene-dicarboxylate monomers of the following general formula (3) obtained by mixing the thi-butyl ester, adding a catalyst giving off a hydroxyl group, and the like, were prepared using WCl ₆ / AlEt ₃ , MoCl ₅ / SnCl ₄ , MoCl ₅ / SnEt ₃ , WAr (OR) ₂ CHR ′ wherein R ′ is an alkyl group having 1 to 4 carbon atoms, and Ar is

Obtained by polymerization in a homogeneous polymerization condition at a temperature ranging from room temperature to 50 ° C using a catalyst selected from the group consisting of chlorides of tungsten and molybdenum or Ziegler catalysts represented by organic compounds. Can be.

(Formula 2)

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group.

(Formula 3)

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group.

The Ziegler catalyst is a polymerization catalyst obtained by mixing an organometallic compound of Groups 1 to 3 and a metal compound of Groups 4 to 8, and exhibits stereospecificity in olefin polymerization. It is useful in the synthesis of polymers, and is mainly used to polymerize olefins under homogeneous polymerization reaction conditions at a low temperature of about room temperature to about 50 ° C, which can be easily understood by those skilled in the art.

When the polymerization is carried out at a temperature significantly lower than room temperature under the homogeneous polymerization reaction conditions, there is a problem that the degree of polymerization is so low that it may have an inappropriate solubility as a structural agent, and also higher than 50 ° C. When the polymerization is carried out at a temperature, it is considered that there is a problem that the polymerization by the Ziegler catalyst which causes the polymerization to produce stereospecificity may not be performed properly.

In addition, another method for preparing a resin having a poly (di-ti-butyl-norbornene-dicarboxylate) as a main chain as shown in Chemical Formula 1 is to react cyclopentane and acrylate as shown in the following Chemical Formula 2, and T-butyl ester is mixed with the reaction product, a catalyst for producing a hydroxyl group is added, and the di-thi-butyl-norbornene-dicarboxylate monomer of formula 3 obtained by heating is subjected to tungsten oxide, molybdenum oxide, and rhenium oxide. And a catalyst selected from the group consisting of a mixture of two or more thereof, which can be obtained by polymerization under heterogeneous polymerization conditions having a temperature in the range of 51 to 120 캜.

The catalysts used in the heterogeneous polymerization conditions are especially oxides of transition metal-based metals on the long-period table, to those skilled in the art as such, or as oxides thereof, in the synthesis of low density resins in general vinyl polymerization. These can be understood as mainly used catalysts.

In addition, the photoresist composition for far-ultraviolet exposure according to the present invention, 10 to 20% by weight of a resin having a poly (di-thi-butyl- norbornene-dicarboxylate) of the general formula (1) as a main chain resin, a photosensitive agent 5 to 10% by weight, 0.1 to 2% by weight of the additives and the remaining amount comprises an organic solvent.

The resin having a poly (di-thi-butyl-norbornene-dicarboxylate) as a main chain used as the structuring agent has a non-conjugated double bond in the main chain, and the non-conjugated double bond is a main chain. Increasing the number of bonds in the structure may have a more excellent structural characteristics of the etching resistance during the etching process, and also includes two or more thi-butoxy groups as protecting groups, all of these thi-butoxy groups are desorbed after the photoreaction to It has a property to further increase the solubility difference between the area irradiated with light and the area not irradiated with light, and according to the pattern of the mask used when irradiating light by the photochemical reaction mechanism with the photosensitive agent And a photochemical reaction in which an acid catalyst is exchanged between the resin as a structuring agent and light is irradiated. To each other between the non-irradiation area is exhibit a marked difference in solubility between these regions and other photochemical reactions.

The photosensitizer may be a quinone-based compound such as diazonaphthoquinone, and all of these photosensitizers may be easily understood by those skilled in the art and may be purchased and used commercially. It is to be understood as well known.

The organic solvents are ketones such as acetone, methyl ethyl ketone (MEK; Methyl Ethyl Ketone), cyclohexanone (Cyclohexnone) and isoamyl ketone, petroleum solvents such as xylene, It may be selected from the group consisting of acetates such as n-Butyl Acetate, Ethyl Cellosolve Acetate, Ethyl Lactate, and mixtures of two or more thereof. Those skilled in the art can be easily understood.

In addition, the photoresist composition for far ultraviolet exposure may further include a sensitizer such as triazole or tetrazole to improve the contrast and resolution of the pattern to be transferred. All of these sensitizers are understood by those skilled in the art to adjust the photosensitivity of the photoresist composition including them to improve the resolution, in particular the contrast.

Further, in addition to those mentioned above, conventional surfactants, plasticizers and dyes may be further included in the range of 0.1 to 10% by weight relative to 100% by weight of the photoresist composition, and these are the coating properties on the wafer of the obtained photoresist composition. Etc., and those that can be understood to be used to improve the stability of the photoresist composition itself.

Example

As shown in the following formula (4), the cyclopentane is reacted with the acrylate, the thi-butyl ester is mixed with the reaction product, and a catalyst for producing a hydroxy group is added to the reaction product, and then di-thi-butyl-norbornene-dica is obtained by heating. 15% by weight of a poly (di-ti-butyl-norbornene-dicarboxylate) resin obtained by polymerizing a carboxylate monomer in a homopolymerization condition at a temperature of 40 ° C. using a WCl ₆ / AlEt ₃ catalyst as a photosensitive agent 7% by weight of diazonaphthoquinone, 1% by weight of a mixture of nonionic surfactant, plasticizer, dye, and triazole in an equal amount as an additive, and 77% by weight of ethyl lactate as an organic solvent. A resist composition was obtained, and hexamethyldisilazane (HMDS) as a primer on the surface of the wafer according to a conventional lithography process for this photoresist composition. Hexamethyldisilazane) was applied and the above-described photoresist composition for ultraviolet exposure according to the present invention obtained above was applied and softbaked at 130 ° C, and then exposed using ultraviolet light having a wavelength of 193 nm on a mask. After the hard bake again, development was carried out to examine the development quality.

As a result, it has been found to be sufficiently commercialized to give a degree of development that can be applied to pattern formation, and it can be used as much as possible to replace the existing commercial photoresist composition.

Therefore, according to the present invention, there is an effect of providing a photoresist composition for far ultraviolet rays, which has sufficient transmittance even in about 193 nm ultraviolet ray, is excellent in etching resistance, is clear in pattern contrast during development, and exhibits high resolution.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (11)

Using ultraviolet rays as a light source in a photolithography process in the process for manufacturing a semiconductor device, characterized in that consisting of a resin having a poly (di-thi-butyl- norbornene-dicarboxylate) as a main chain as shown in the general formula (1) Structural resin for photoresist composition for far ultraviolet exposure which can be exposed by exposure. Formula 1

In the above, R is hydrogen, methyl group, alkyl group having 1 to 10 carbon atoms, such as carbonyl group, carbonyl group, carboester group, n is a natural number of 1,000 to 1,000,000. As shown in the following Chemical Formula 2, the cyclopentane is reacted with an acrylate, the thi-butyl ester is mixed with the reaction product, and a catalyst which gives a hydroxyl group is added to the reaction product, followed by heating. A process for producing a resin comprising poly (di-thi-butyl-norbornene-dicarboxylate) as a main chain, which is obtained by polymerizing a norbornene-dicarboxylate monomer. (Formula 2)

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group. (Formula 3)

In the above, R is an alkyl group having 1 to 10 carbon atoms, such as hydrogen, methyl, ethyl group, carbonyl group, carboester group. The method of claim 2, The di-thi-butyl-norbornene-dicarboxylate monomer may be WCl ₆ / AlEt ₃ , MoCl ₅ / SnCl ₄ , MoCl ₅ / SnEt ₃ , WAr (OR) ₂ CHR ′ where R ′ is 1 to C 4 is an alkyl group, and Ar is

Poly (di-ti-butyl-norbornene-dica) characterized in that the polymerization is carried out using a catalyst selected from the group consisting of Ziegler catalysts represented by chlorides or organic compounds of tungsten and molybdenum. A method for producing a resin containing carboxylate) as a main chain. The method of claim 3, wherein Wherein said di-thi-butyl-norbornene-dicarboxylate monomer is polymerized under homogeneous polymerization conditions at a temperature ranging from room temperature to 50 ° C. The manufacturing method of resin which has a principal chain). The method of claim 2, Wherein said di-thi-butyl-norbornene-dicarboxylate monomer is polymerized using a catalyst selected from the group consisting of tungsten oxide, molybdenum oxide, rhenium oxide, and mixtures of two or more thereof. -Butyl-norbornene-dicarboxylate) The manufacturing method of resin which has a principal chain. The method of claim 5, Wherein said di-thi-butyl-norbornene-dicarboxylate monomer is polymerized under heterogeneous polymerization conditions at a temperature in the range of 51 to 120 ° C. The manufacturing method of resin which has a rate) as a main chain. 10 to 20% by weight of the resin having a poly (di-ti-butyl-norbornene-dicarboxylate) of the formula (1) as a structural resin, 5 to 10% by weight of a photosensitizer, 0.1 to 2% by weight of additives and the balance A photoresist composition for ultra-violet exposure, characterized in that it comprises an organic solvent. The method of claim 7, wherein The photoresist composition for ultraviolet exposure, characterized in that the photosensitive agent is a quinone-based compound such as diazonaphthoquinone. The method of claim 7, wherein The organic solvent is acetone, methyl ethyl ketone (MEK; Methyl Ethyl Ketone), cyclohexanone (Cyclohexnone) and isoamyl ketone, such as ketones, petroleum solvents such as xylene, The above-mentioned far ultraviolet rays, characterized in that selected from the group consisting of acetates such as n-Butyl Acetate, Ethyl Cellosolve Acetate, Ethyl Lactate, and mixtures of two or more thereof. Exposure photoresist composition. The method of claim 7, wherein The photoresist composition for ultraviolet exposure further comprises a sensitizer such as triazole or tetrazole in the photoresist composition for ultraviolet exposure. The method of claim 10, The photoresist composition for ultraviolet exposure, characterized in that the sensitizer further comprises 0.1 to 10% by weight relative to 100% by weight of the photoresist composition.