KR100244921B1 - Gas analyzing apparatus for semiconductor fabrication and analyzing method using the same - Google Patents

Abstract

The present invention relates to a gas analysis device for semiconductor manufacturing and an analysis method using the same.

The present invention, the first inlet means for introducing a standard gas of a known composition at a set flow rate; A second inflow means for introducing an unknown composition gas at a set flow rate, and the standard gas and the sample gas having passed through respective lines of the first inflow means and the second inflow means are introduced into the same line and are introduced from the same line; And a mass spectrometer configured to ionize and analyze the mixed gas mixed with the standard gas and the sample gas in a predetermined ratio.

Therefore, by performing an analysis process using a gas analyzer using a mass spectrometer, the reliability of analytical data can be improved and the gas analyzer can be easily managed.

Description

Gas analysis device for semiconductor manufacturing and analysis method using the same

The present invention relates to a gas analysis device for semiconductor manufacturing and an analysis method using the same, and more particularly, to compare and analyze a mixed gas in which a standard gas and a sample gas are mixed by using a mass spectrometer (Electron Ionization Mass Spectrometer; EI-MS). The present invention relates to a gas analysis device for semiconductor manufacturing and an analysis method using the same, thereby improving the reliability of analysis data and efficiently managing the gas analysis device.

In general, a semiconductor device is manufactured by repeatedly performing the above series of processes including a film forming process, a photo process, an etching process, an impurity implantation process, and a metal process.

Various kinds of gases are used in performing the series of processes for manufacturing such semiconductor devices.

For example, argon (Ar) gas is used for a sputtering process or an etching process, and helium (He) gas is used for a cleaning process or a conveying process.

Gases used in the manufacture of such semiconductor devices are generally used in different components and concentrations according to each process performed in the series of processes.

Therefore, it was common to always use after analyzing the composition and concentration of the gases before performing the process.

In the conventional analysis of these gases, various gas analyzers were used, and among them, a mass spectrometer was used to perform an analysis by ionizing a gas to be analyzed by using an electron collision.

Here, the analysis of the conventional gas using the mass spectrometer was performed by directly introducing the mixed gas to be analyzed into the mass spectrometer.

However, when analyzing a trace amount of gas using a conventional mass spectrometer, the analysis was performed by directly receiving the gas to be analyzed without performing a series of processes such as stabilizing and cleaning the gas to be analyzed. The reliability of the data is degraded.

In addition, in the case of an inert gas such as argon, helium, xenon (Xe), the gases were ionized by an electron collision using high energy.

This damaged the gas analyzer because the mass spectrometer for the analysis of inert gas had to provide high energy.

Therefore, the analysis of the gas using a conventional mass spectrometer has a problem that the reliability of the analysis data is lowered, and the analysis apparatus is damaged when performing an analysis requiring high energy.

Summary of the Invention An object of the present invention is to provide a gas analysis device for semiconductor manufacturing and an analysis method using the same for improving reliability of analytical data and efficiently managing a gas analyzer by analyzing a mixed gas mixed with a standard gas and a sample gas by using a mass spectrometer. To provide.

1 is a block diagram showing an embodiment of a gas analysis device for semiconductor manufacturing according to the present invention.

* Explanation of symbols for main parts of the drawings

10, 12: vessel 14, 16: pressure holding

18, 20: flow controller 22: dual valve

24: heating wire 26: temperature controller

28 mass spectrometer 30 output unit

According to an aspect of the present invention, there is provided a gas analysis device for semiconductor manufacturing, comprising: first inlet means for introducing a standard gas of a known composition at a set flow rate; A second inflow means for introducing an unknown composition gas at a set flow rate, and the standard gas and the sample gas having passed through respective lines of the first inflow means and the second inflow means are introduced into the same line and are introduced from the same line; And a mass spectrometer configured to ionize and analyze the mixed gas mixed with the standard gas and the sample gas in a predetermined ratio.

The first inlet means and the second inlet means is preferably a flow controller.

The same line is preferably further provided with a heating wire for removing the moisture and pollutant source of the mixed gas, a temperature controller for maintaining a constant temperature of the heat supplied to the heating wire is preferably further provided.

A dual valve for stably introducing and purifying the sample gas is preferably further provided between the second inlet means and the same line.

Preferably, a pressure retainer for maintaining a predetermined pressure when the standard gas and the sample gas are introduced is provided on the first line into which the standard gas and the sample gas are introduced.

It is preferable that the output means made of a monitor or a printer for outputting the result of comparing and analyzing the mixed gas.

A gas analysis method for semiconductor manufacturing according to the present invention is a gas analysis method for semiconductor manufacturing using a mass spectrometer that analyzes the gas by ionizing a gas by using an electron collision, wherein a standard gas having a known composition and a sample gas having an unknown composition are determined. The mixed gas mixed at the ratio of is characterized in that for performing the analysis using the mass spectrometer.

Then, it is preferable to mix the standard gas and the sample gas at a predetermined ratio by using an inflow means for introducing at a set flow rate.

The analysis of the sample gas using the mixed gas is preferably a quantitative analysis.

The sample gas is preferably an inert gas consisting of helium, argon, nitrogen or xenon, or a synthesis gas such as sulfur hexafluoride.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a block diagram showing an embodiment of a gas analysis device for semiconductor manufacturing according to the present invention.

First, in order to analyze the gas used for a semiconductor manufacturing process, the container 10 which collected the standard gas of a known composition, and the container 12 which sampled the sample gas of an unknown composition are provided, respectively.

In addition, pressure gas holders 14 and 16 are provided on each of the first lines through which the standard gas and the sample gas flow into the gas analyzer, while the standard gas and the sample gas flow while maintaining a predetermined pressure. The first inlet 18 and the second inlet 20 are provided such that the standard gas and the sample gas passed through the holders 14 and 16 are introduced only at a set flow rate.

The first inlet 18 and the second inlet 20 of the present invention is made of a mass flow controller (MFC).

In addition, a dual valve (22) for stably introducing the sample gas introduced from the second inlet 20 and purifying the sample gas is provided, and the standard gas and the sample gas introduced from each line are provided. The same line to be mixed is provided with a heating wire 24 for removing the moisture and pollution sources of the mixed gas mixed with the standard gas and the sample gas.

The temperature control unit 26 is further provided to maintain a predetermined temperature provided to the hot wire 24, to maintain the temperature of the optimum conditions for each mixed gas to remove moisture and pollutants.

In addition, a mass spectrometer (28) for receiving the mixed gas mixed with the standard gas and the sample gas is ionized using an electron collision to perform the analysis, and further provided with an output unit 30 for outputting the analysis results have.

The output unit 30 of the present invention may be formed of a monitor or a printer, and the embodiment receives an output from the monitor.

The gas to be analyzed in the present invention is a sample gas having an unknown composition, and the analysis of the sample gas is performed by comparing and analyzing the mixed gas in which the sample gas is mixed with the standard gas.

The sample gas to be analyzed in the present invention is efficient for the analysis of inert gas such as helium, argon, nitrogen (N ₂ ) or xenon, and also for the analysis of synthesis gas such as sulfur hexafluoride (SF ₆ ). to be.

In the present invention, the analysis is a quantitative analysis, and is effective for analysis of the component or concentration evaluation, and the analysis range is considerably wide, from one hundredth to one millionth.

The operation and effects of the embodiment of the present invention having the above-described configuration will be described.

First, the respective vessels 10 and 12 from which the standard gas of known composition and the sample gas of unknown composition are taken are connected to respective lines.

Here, the sample gas should be connected to the line passing through the dual valve (22).

In order to analyze the components, the pre-connected standard gas and the sample gas are passed through the pressure retainers 14 and 16 provided at the initial positions entering the respective lines.

Here, the pressure retainers 14 and 16 allow the standard gas and the sample gas introduced into each line to be introduced while maintaining a predetermined pressure.

In this way, the standard gas and the sample gas, which are introduced while maintaining a predetermined pressure, are introduced only at a predetermined flow rate set by the first inlet 18 and the second inlet 20.

And the standard gas which is introduced at a predetermined predetermined flow rate is introduced into the same line, the sample gas is introduced into the same valve through the dual valve 22.

The dual valve 22 stabilizes the sample gas and purifies the sample gas.

In this way, the standard gas and the sample gas introduced into the same line are mixed.

That is, the mixed gas is a mixed gas that is a direct object of analysis.

Here, the hot wire 24 provided on the same line removes contaminants such as moisture and impurities contained in the mixed gas passing through the same line.

Here, the temperature provided to the hot wire is maintained at a predetermined temperature by using the temperature controller 26.

In addition, the control of changing the temperature according to each gas may also be made using the temperature control unit 26.

In this way, the mixed gas from which the moisture and the contaminant are removed is introduced into the mass spectrometer 28 which is ionized by using an electron collision to perform the analysis, and the analysis result is immediately displayed on the output unit.

The present invention having such a configuration compares and analyzes the sample gas by analyzing a mixed gas in which a standard gas having a known composition and a sample gas having an unknown composition are mixed in analyzing the gas used in the manufacturing process.

That is, since a predetermined gas is introduced by using the first inleter 18 and the second inleter 20, the comparison and analysis are performed in a situation where the ratio is accurately known, and accurate analysis is performed.

In this case, the gas analyzer of the present invention enables stable analysis because the gas is supplied while maintaining a constant pressure, and the sample gas is primarily washed and then supplied, so that the gas is analyzed without being affected by impurities. Can be performed.

In addition, it is possible to maximize the efficiency of the analysis by removing moisture and impurities of the mixed gas using the hot wire 24.

In the case of an inert gas that must be analyzed using high energy, the present invention is more efficiently performed because the comparison and analysis are performed using the mixed gas.

In addition, since the inert gas can be analyzed without using high energy, the gas analyzer can be efficiently managed.

Therefore, according to the present invention, an analysis process is performed using a gas analyzer using a mass spectrometer, thereby improving reliability of analytical data and efficient management of the gas analyzer.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and variations are possible within the technical scope of the present invention, and such modifications and modifications are within the scope of the appended claims.

Claims (14)

A first inflow means for introducing a standard gas of a known composition at a set flow rate, a second inflow means for introducing a sample gas of an unknown composition at a set flow rate, and the first inflow means and a line passing through each of the first inflow means and the second inflow means; A mass spectrometer in which standard gas and sample gas are introduced into the same line and ionized mixed gas mixed with the standard gas and sample gas flowing in the same line at a predetermined ratio is analyzed using an electron collision (Electron Ionization Mass Spectrometer; EI-MS) comprising a gas analysis device for semiconductor manufacturing. The gas analyzer of claim 1, wherein the first inflow means and the second inflow means are a mass flow controller (MFC). The gas analyzer of claim 1, wherein the same line is further provided with a heating wire for removing moisture, a pollutant, and the like of the mixed gas. The gas analyzer of claim 3, further comprising a temperature controller configured to maintain the heat supplied to the hot wire at a predetermined constant temperature. The gas analyzer of claim 1, further comprising a dual valve between the second inlet unit and the same line to stably introduce and purge the sample gas. 2. The semiconductor manufacturing gas according to claim 1, wherein a pressure retainer for maintaining a predetermined pressure when the standard gas and the sample gas are introduced is provided on the first line into which the standard gas and the sample gas are introduced. Analysis device. The gas analyzer of claim 1, further comprising output means for outputting a result of comparing and analyzing the mixed gas. 8. The gas analyzer of claim 7, wherein the output means comprises a monitor. 8. The gas analyzer of claim 7, wherein the output means comprises a printer. In the gas analysis method for semiconductor manufacturing using a mass spectrometer which ionizes a gas by using an electron collision and analyzes the said gas, The mass spectrometer mixes the mixed gas which mixed the standard gas of a predetermined composition and the sample gas of an unknown composition in a predetermined ratio. Gas analysis method for manufacturing a semiconductor, characterized in that to carry out the analysis. The gas analysis method according to claim 10, wherein the standard gas and the sample gas are mixed at a predetermined ratio by using a flow controller that flows at a set flow rate. The method of claim 10, wherein the analysis of the sample gas using the mixed gas is quantitative analysis. The gas analysis method of claim 10, wherein the sample gas is an inert gas. The method of claim 13, wherein the inert gas is selected from the group consisting of helium, argon, nitrogen, xenon, and sulfur hexafluoride.

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