KR100236045B1 - Phase shift mask and manufacturing method of the same - Google Patents

Abstract

The present invention relates to an attenuation type phase inversion mask, and more particularly, to an attenuation type phase inversion mask suitable for preventing side lobes by adjusting the thickness of an edge portion of a halftone phase shift layer and a method of manufacturing the same.

Attenuation type phase inversion mask according to the present invention is a translucent substrate; And a halftone phase shifting layer formed on the light transmissive substrate and having an open region and a central portion formed thicker than an edge portion on the phase inversion region except the open region.

Description

Phase inversion mask and manufacturing method thereof

The present invention relates to an attenuation type phase inversion mask, and more particularly, to an attenuation type phase inversion mask suitable for preventing side lobes by adjusting the thickness of an edge portion of a halftone phase shift layer and a method of manufacturing the same.

In general, a photolithography process, which is widely used in a semiconductor device manufacturing process, uses a photomask that is divided into a portion that transmits light and a portion that blocks light in a shape to make a semiconductor device.

That is, the general photo mask is composed of a light shielding pattern and a light transmitting pattern to allow selective exposure.

However, as the pattern density increases, diffraction phenomena (light diffraction phenomenon) occurs and there is a limit in improving the resolution.

Therefore, a process of increasing the resolution using a phase shifting mask has been studied in various fields.

The technology using a phase inversion mask is a combination of a light transmitting area that transmits light as it is and a reverse light transmitting area that transmits light by inverting 180 ° to prevent the resolution from being reduced between the light shielding pattern and the light transmitting area.

These phase inversion masks are based on Levenson's Alternate Type Phase Shift Mask, which is a rim type in which shading patterns and phase shift layers are proposed by Nitayama and others to improve the resolution limit of contact holes. (RIM Type) A phase inversion mask has emerged, and recently, an attenuated phase shift mask (alternatively, a halfton phase inversion mask or t A phase inversion mask (also called t means transmittance) was developed to reduce the area of the phase inversion mask.

In addition, such masks have been developed with the development of mask manufacturing technology, so that modified masks in which the phase difference of light is applied have increased the optical resolution limit.

Hereinafter, a conventional attenuation type phase inversion mask and a method of manufacturing the same will be described with reference to the accompanying drawings.

1 is a plan view of a conventional one phase inversion mask.

1 is a plan view of a conventional attenuation type phase inversion mask having a plurality of isolation patterns when four isolation patterns are adjacent to each other by the same distance. At this time, No. 1 is an open area to which the light transmissive substrate is exposed, and No. 2 is a halftone phase shifting layer which inverts the transmitted light while being a translucent layer. The optical energy distribution between each of the isolated patterns will be described with reference to FIGS. 2 to 3.

2A is a cross-sectional view taken along the line AA ′ of FIG. 1, FIG. 2B is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line AA ′ of FIG. 1, and FIG. 2C is shown in FIG. Fig. 2D is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line A′-A '' of FIG. 1, and FIG. 2D is a wafer of the light passing through the phase inversion mask shown along the line A-A '' in FIG. It is a graph showing the intensity of the phase.

First, as illustrated in FIG. 2A, the light energy between two isolated patterns is described. The halftone phase shift layer 2 formed on the light transmissive substrate 3 is selectively patterned (photolithography process + etching process) to form a light transmissive substrate ( When the transmissive area 1 is formed to expose 3), constructive interference of (-) amplitude component light is generated at the point (a) where two isolated patterns, which are open areas 1, are 1/2 from a horizontal or vertical direction. Happens. Therefore, as the resolution of the open area 1 increases, the size of the unnecessary pattern increases accordingly. That is, since the two isolation patterns have the same amplitude as in FIGS. 2B and 2C, the negative reinforcement of light at the point (a) that is 1/2 from the center of each isolation pattern as shown in FIG. 2D. Interference will occur. Therefore, the size of the unnecessary pattern is also increased in proportion to the energy of the light source, and when the light intensity of the halftone phase shift layer exceeds the critical point, the unnecessary pattern affects the etching of the etching target layer under the resist.

In particular, in the portion (b) where the four isolation patterns overlap each other, a negative amplitude reinforcement interference of light occurs, causing the unnecessary light energy to be the largest.

This will be described with reference to the accompanying drawings.

FIG. 3A is a structural cross-sectional view taken along lines B-B 'and C-C' of FIG. 1, and FIG. 3B shows an amplitude on the wafer of light passing through the phase inversion mask shown by line B-B 'of FIG. 3C is a graph showing the amplitude of the light on the wafer passing through the phase inversion mask shown by the line C-C 'of FIG. 1, and FIG. 3D is the pass of the phase inversion mask shown by the line BB' of FIG. It is a graph showing that the intensity of light on the wafer is added to the intensity on the wafer of light passing through the phase inversion mask shown by the line C-C 'of FIG.

That is, FIG. 3A is a structural cross-sectional view taken along the lines BB 'and C-C' of FIG. 1, and the amplitude on the wafer of light passing through the translucent substrate 3 through each open area 1 is shown in FIGS. 3B and 3C. As is the same. However, as shown in Fig. 3D, the light intensity at the point (b) where the amplitude of the light on the wafer shown in Fig. 3B and the amplitude of the light on the wafer shown in Fig. 3C overlaps the critical point. Such light beyond the critical point creates an unwanted pattern.

Hereinafter, the attenuation type phase shift mask that can prevent the formation of an unwanted abnormal pattern will be described.

4 is a plan view of another conventional phase inversion mask.

FIG. 4 is a planar view of a conventional attenuation type phase reversal mask having a plurality of isolation patterns, in which four isolation patterns are adjacent to each other by the same distance to each other. A dummy pattern such as the region 5 is formed. At this time, No. 1 is an open region, and No. 2 is a halftone phase shifting layer which inverts transmitted light while being a translucent layer.

The role of the optical energy distribution and the dummy pattern between the isolated patterns will be described with reference to FIGS. 5A to 5D.

FIG. 5A is a cross-sectional view taken along the lines D-D 'and E-E' of FIG. 4, and FIG. 5B shows the amplitude on the wafer of light passing through the phase inversion mask shown by the line D-D 'of FIG. 5C is a graph showing the amplitude of the light on the wafer passing through the phase inversion mask shown along the line E-E 'of FIG. 4, and FIG. 5D passes through the phase inversion mask shown along the line DD' of FIG. It is a graph showing that the intensity of light on the wafer is added to the intensity on the wafer of light passing through the phase inversion mask shown by the line EE ′ of FIG. 4.

FIG. 5A is a structural cross-sectional view taken along lines D-D 'and E-E' of FIG. 4, and a halftone phase shift layer 2 having an open region 1 is formed on the light-transmissive substrate 3, and an isolation pattern is formed. The light blocking material 4 is formed in a portion c in which the open region 1 overlaps diagonally. Such a light shielding material 4 can prevent the transmission of light in the overlapping portion (c) to reduce the negative amplitude component, thereby reducing the transmitted light energy intensity below the threshold.

That is, as shown in Figs. 5B and 5C, the amplitude on the wafer of the light passing through the light transmissive substrate 3 is the same. However, in the part (c) where the open area 1 overlaps, the light is not transmitted below the light blocking material 4 due to the light blocking material 4, so that the amplitude at the overlapping part c decreases, resulting in the reduction of the amplitude. As shown in 5d, it can be seen that the light intensity at the point (c) where the amplitude of light on the wafer overlaps does not exceed the critical point.

6 is a structural cross-sectional view of another conventional phase inversion mask.

Another conventional phase inversion mask is also a cross-sectional view along the lines DD 'and EE' of FIG. 4. The difference between the conventional phase inversion mask and the other phase inversion mask is that the dummy pattern has a dummy open area 5 in the halftone phase shift layer 2. ) Is formed. That is, in the portion (c) where each open area 1 overlaps diagonally, a dummy open area 5 having a phase opposite to that of the light with the halftone phase shift layer 2 is formed to form an adjacent halftone phase shift in the portion. It is possible to lower the intensity of light energy below the threshold by reducing the overall light intensity by generating an offset of light with the layer (2).

In the conventional attenuation type phase shift mask, a dummy pattern such as a dummy light blocking material or a dummy open area is formed in order to prevent side lobes that may occur at portions where four isolation patterns overlap. However, it is not easy to accurately detect the overlapping portion of the four isolation patterns, and in particular, there is a problem that a light-shielding material deposition and patterning process should be added.

The present invention has been made to solve the problems of the conventional attenuated phase inversion mask as described above, the side of the halftone phase shift layer formed in the light shielding region formed in the edge portion thinner than the center portion may occur in the overlapping portion of the open region SUMMARY OF THE INVENTION An object of the present invention is to provide attenuated phase inversion mask with reduced lobe and a method of manufacturing the same.

1 is a plan view of a conventional one phase inversion mask

Figure 2a is a cross-sectional view taken along the line AA 'of Figure 1

FIG. 2B is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along line AA ′ in FIG.

Fig. 2C is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line A '-A "in Fig. 1;

Fig. 2D is a graph showing the intensity on the wafer of light passing through the phase inversion mask shown along the line A-A 'in Fig. 1;

3A is a cross-sectional view taken along the lines B-B 'and C-C' of FIG.

Fig. 3B is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line B-B 'in Fig. 1;

FIG. 3C is a graph showing the amplitude on the wafer of light passing through the phase inversion mask along line C-C 'in FIG.

FIG. 3D shows the intensity on the wafer of light passing through the phase inversion mask shown by the line B-B 'of FIG. 1 plus the intensity on the wafer of light passing through the phase inversion mask shown by the line C-C' of FIG. Graph showing

Figure 4 is a plan view of another conventional phase inversion mask

Figure 5a is a cross-sectional view taken along the line D-D 'and E-E' of FIG.

Fig. 5B is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line D-D 'in Fig. 4;

Fig. 5C is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line E-E 'in Fig. 4;

FIG. 5D shows the intensity on the wafer of light passing through the phase inversion mask shown by the line D-D 'of FIG. 4 plus the intensity on the wafer of light passing through the phase inversion mask shown by the line E-E' of FIG. Graph showing

Figure 6 is a structural cross-sectional view of another conventional phase inversion mask

7 is a plan view of a phase inversion mask according to the present invention;

FIG. 8A is a structural cross-sectional view of the phase inversion mask of the first embodiment of the present invention along the line F-F 'in FIG.

FIG. 8B is a graph showing the amplitude on the wafer of light passing through the phase inversion mask shown along the line F-F 'in FIG.

FIG. 8C is a graph showing the intensity on the wafer of light passing through the phase inversion mask shown along the line F-F 'in FIG.

9A to 9D are cross-sectional views of a manufacturing process of the phase shift mask according to the first embodiment of the present invention.

10A to 10D are cross-sectional views of a manufacturing process of the phase inversion mask according to the second embodiment of the present invention.

11A to 11C are cross-sectional views of a manufacturing process of the phase shift mask according to the third embodiment of the present invention.

12A to 12D are cross-sectional views of a manufacturing process of the phase shift mask according to the fourth embodiment of the present invention.

13A to 13D are cross-sectional views of a manufacturing process of the phase shift mask according to the fifth embodiment of the present invention.

* Explanation of symbols for main parts of the drawings

10: open area 11: halftone phase shift layer

12 translucent substrate 13 chromium layer

14: light transmitting film

Phase reversal mask according to the present invention is a transparent substrate; And a halftone phase shifting layer formed on the light transmissive substrate and having an open region and a central portion formed thicker than an edge portion on the phase inversion region except the open region.

Hereinafter, a phase inversion mask according to the present invention will be described with reference to the accompanying drawings.

7 is a plan view of a phase inversion mask according to the present invention.

The phase inversion mask according to the present invention is composed of a halftone phase shifting layer 11 having a plurality of open regions 10 on which the light transmissive substrate 12 is exposed, wherein the shape of the halftone phase shifting layer 11 is The thickness of the edge part of the halftone phase shifting layer 11, ie, the halftone phase shifting layer 11, which is directly in contact with the open area 10 is formed to be thinner than the thickness of the middle part. . In the attenuation type phase inversion mask having such a shape, since the light transmittance of the edge portion E of the halftone phase shifting layer 11 is larger than the center portion M, the amplitude of the light transmitted through the open region 10 is halftone phase shifting. It is offset to some extent at the edge portion E of the layer 11 to prevent side lobes from occurring in the portion c at which the open regions 10 overlap.

Such embodiments of the phase shift mask of the present invention will be described.

FIG. 8A is a structural cross-sectional view of the phase inversion mask of the first embodiment of the present invention along the line F-F 'of FIG. 7, and FIG. 8B is on the wafer of light passing through the phase inversion mask shown along the line F-F' in FIG. Fig. 8C is a graph showing the intensity on the wafer of light passing through the phase inversion mask shown along the line F-F 'in Fig. 7.

That is, the structure of the phase inversion mask according to the first embodiment of the present invention is formed on the light transmissive substrate 12 and the light transmissive substrate 12 as shown in FIG. 8A, and has an open area 10 and an open area 10. The halftone phase shifting layer 11 is formed in the shape of the center portion M thicker than the edge portion E on the phase reversal region except for.

FIG. 8B is a graph showing the amplitude on the wafer of the phase inversion mask as described above. When the light passing through the open region 10 exhibits an over shooting state, the light partially passes through the light. It can be seen that the edge portion E of the halftone phase shift layer 11 shifting the phase of light exhibits an under shooting state.

FIG. 8C is a graph showing the amplitude as shown in FIG. 8B as intensity. The amplitude of the light of the edge portion E of the halftone phase shift layer 11 and the amplitude of the light transmitted through the open region 10 cancel each other. It can be seen that the light intensity slope is sharpened.

When the attenuation type phase shift mask of the present invention is described in more detail, the halftone phase shift layer 11 is first used to reduce overlapping light intensity due to side lobe at the portion (c) where the four open regions 10 overlap. The thickness of the halftone phase shifting layer 11 in the mid part excluding the edge part E is formed to have a transmittance of 2% or less with respect to the exposed light or to a thickness that is not transmitted. The edge portion E of the layer 11 is formed to have a transmittance of 7 to 10% with respect to the light to be exposed, but is formed to be less than 5 times compared to the center portion M. In this case, the width W of the edge portion E of the halftone phase shift layer 11 is formed in inverse proportion to the transmittance and in proportion to the distance between the open regions 10.

9A to 9D are cross-sectional views illustrating a process of manufacturing a phase shift mask according to the first embodiment of the present invention.

First, as shown in FIG. 9A, the halftone phase shifting layer 11 and the first photosensitive film PR ₁₀ are sequentially formed on the light transmissive substrate 12. In this case, the halftone phase shift layer 11 has a transmittance of less than 2% with respect to the transmitted light or is formed to a thickness such that it cannot be transmitted. The halftone phase shift layer 11 is formed of any one of MoSiO, MoSiON, CrO, and CrON when the incident light has a wavelength of 365 nm, and is formed of any one of MoSiO and Cr when it is 248 nm. In addition, a Mo layer may be formed on the halftone phase shift layer 11 to prevent a charging effect when the first photoresist film PR ₁₀ is patterned in a subsequent process.

As shown in FIG. 9B, the center portion M and the edge portion E of the halftone phase shift layer 11 are defined, and then the first photoresist film PR ₁₁ is patterned so as to remain only in the center portion M by an exposure and development process. . Subsequently, the halftone phase shift layer 11 is etched by a predetermined thickness by an etching process using the patterned first photoresist film PR ₁₀ as a mask. In this case, the thickness of the halftone phase shift layer 11 remaining after the etching process is a thickness t for phase shifting the transmitted light by about 160 to 200 degrees, and transmits light by about 7 to 10%. It's thick enough. The region except for the central portion M and the edge portion E of the halftone phase shift layer 11 is an open region.

As shown in FIG. 9C, after the first photoresist film PR ₁₀ is removed, the second photoresist film PR ₁₁ is formed on the entire surface of the halftone phase shift layer 11, and the open region formation region is exposed through the exposure and development processes. The two photoresist film PR ₁₁ is patterned.

As shown in FIG. 9D, the half-tone phase shift layer 11 is selectively removed by an etching process using the patterned second photoresist film PR ₁₁ as a mask to open the open region 10 where the light transmissive substrate 12 is exposed. Form.

10A through 10D are cross-sectional views illustrating a process of manufacturing a phase shift mask according to a second embodiment of the present invention.

First, as shown in FIG. 10A, a chromium layer 13 and a first photoresist film PR ₁₀ are sequentially formed on the light transmissive substrate 12, and then the center portion M and the edge portion E of the chromium layer 13 are formed. After defining the first photosensitive film PR ₁₀ to be patterned so as to remain only in the central portion (M) of the chromium layer 13 in the exposure and development process. Next, the chromium layer 13 is etched to a predetermined thickness by an etching process using the patterned first photoresist film PR ₁₀ as a mask. In this case, the central portion M of the chromium layer 13 has a transmittance of about 0 to 2% with respect to the transmitted light, and the etched chromium layer 13 transmits about 7 to 10% of the transmitted light. The region except for the central portion M and the edge portion E of the chromium layer 13 is an open region.

As shown in FIG. 10B, the first photoresist film PR ₁₀ is removed, and then the light transmissive film 14 is deposited on the entire surface of the chromium layer 13. Then, the light transmissive film 14 is planarized by chemical mechanical polishing (CMP). The reason for such a flattening process is that the chromium layer 13 has an uneven shape, so that the transmissive film 14 may also have a step. The step may cause scattering of light during light transmission, thereby causing a fine step. An error occurs when the pattern is formed. In this case, the light transmissive film 14 is formed using an oxide film (SiO ₂ ). In addition, the chromium layer 13 and the light transmissive layer 14 may represent Cr / SiO ₂ , wherein the Cr / SiO ₂ is a halftone phase shifting layer 11. In addition, the light-transmitting film 14 is formed to a thickness (t) that can cause a phase shift (160 ~ 200 °) with respect to the transmitted light. In this case, the thickness t of the phase shift layer required for the phase shift is when the wavelength of the incident light is λ and the refractive index of the metal oxide film is n.

It can be represented by the formula of t = λ / 2 (n-1).

As shown in FIG. 10C, the second photoresist film PR ₁₂ is deposited on the entire surface of the light-transmissive film 14, and then the second photoresist film PR ₁₂ is patterned to expose the open region by an exposure and development process.

As shown in FIG. 10D, the open region 10 through which the light-transmissive substrate 12 is exposed is sequentially etched by the light-transmissive film 14 and the chromium layer 13 by an etching process using the second photoresist film PR ₁₂ as a mask. After the formation, the second photosensitive film PR ₁₁ was removed to complete an attenuation type phase inversion mask having an opposite phase after light transmission between the open region 10 and the edge portion E of the halftone phase shift layer 11.

11A to 11C are cross-sectional views of the manufacturing process of the phase shift mask according to the third embodiment of the present invention.

The third embodiment of the present invention is similar to the second embodiment in that the light-transmissive film of the second embodiment of the present invention is first formed under the chromium layer.

First, as shown in FIG. 11A, the light-transmitting film 14, the chromium layer 13, and the first photosensitive film PR ₁₀ are sequentially formed on the light-transmissive substrate 12, and then the central portion M of the chromium layer 13 and After defining the edge portion E, the first photosensitive film PR ₁₀ is patterned to remain only in the central portion M of the chromium layer 13 by an exposure and development process. Next, the chromium layer 13 is etched to a predetermined thickness by an etching process using the patterned first photoresist film PR ₁₀ as a mask. In this case, the thickness of the light-transmitting film 14 and the edge portion E of the chromium layer 13 is formed to a thickness t of about 16 to cause a phase shift of about 160 to 200 °. In addition, the area | region except the center part M and the edge part E of the chromium layer 13 is an open area | region. In addition, the chromium layer 13 and the light transmissive layer 14 may be represented by Cr / SiO ₂ , wherein the Cr // SiO ₂ forms a halftone phase shift layer 11.

As shown in FIG. 11B, after the first photoresist film PR ₁₀ is removed, the second photoresist film PR ₁₂ is deposited on the entire surface of the chromium layer 13, and then the second photoresist film PR is exposed to expose the open area through an exposure and development process. ₁₂ ).

As shown in FIG. 11C, in the etching process using the second photoresist film PR ₁₂ as a mask, the Cr layer 13 and the light transmissive film 14 are sequentially etched to expose the open region 10 where the light transmissive substrate 12 is exposed. After forming, the second photoresist film PR ₁₁ is removed.

12A to 12D are cross-sectional views of a manufacturing process of the phase shift mask according to the fourth embodiment of the present invention.

The fourth embodiment of the present invention is similar to the phase inversion mask of the first embodiment of the present invention, but the material for determining the transmittance of the attenuated phase inversion mask is formed of a chromium layer. It is attenuation type phase inversion mask formed to a thickness which can transmit about -10%, and etching a translucent substrate and obtaining a phase shift effect.

First, as shown in FIG. 12A, a chromium layer 13 is formed on the light transmissive substrate 12, and then selectively patterned (photolithography process + etching process) to expose a plurality of open regions in which the light transmissive substrate 10 is exposed. 10, and the chromium layer 13 except for the open region 10 has a thickness of the center portion M of the chromium layer 13 having an edge portion E having a thickness in contact with the open region 10. Form thinner. In this case, the central portion M of the chromium layer 13 has a transmittance of about 0 to 2% with respect to transmitted light, and the etched chromium layer 13 transmits about 7 to 10% of transmitted light. That is, the edge portion E of the chromium layer 11 functions similarly to the halftone phase shift layer.

As shown in FIG. 12B, a photosensitive film PR ₁₂ is formed on the entire surface of the light transmissive substrate 12 including the chromium layer 13, and then back exposure is performed.

As shown in Fig. 12C, the photosensitive film PR ₁₂ is developed. Next, the light-transmissive substrate 12 is removed by a etching process using the photosensitive film PR ₁₂ as a mask. At this time, the removal thickness of the light transmissive substrate 12 is removed in consideration of the thickness of the chromium layer 13 edge portion E, but in the process of forming the chromium layer 13 edge portion E, the transmittance of the transmitted light is first given priority. In this case, the actual phase shift angle may not be 160 to 200 °, so that the phase inversion thickness t is adjusted by etching the light transmissive substrate 12.

As shown in Fig. 12D, the photosensitive film PR ₁₂ is removed.

13A to 13D are cross-sectional views illustrating a manufacturing process of the phase shift mask according to the fifth embodiment of the present invention.

First, as shown in FIG. 13A, the first photoresist film PR ₁₀ is deposited on the light-transmissive substrate 12, and then the photoresist film PR ₁₀ is patterned by defining a light shielding area by an exposure and development process, followed by patterning the first photoresist film. The light transmissive substrate 12 is removed by a etching process using PR ₁₀ as a mask.

As shown in FIG. 13B, after the first photosensitive film PR ₁₀ is removed, a halftone phase shifting layer 11 is formed on the entire surface of the transparent substrate 12. Next, the halftone phase shift layer 10 is planarized. In this case, the halftone phase shifting layer 11 is formed on the light transmissive substrate 12 with a different thickness, but the thickness of the central portion M of the halftone phase shifting layer 11 formed by thickening the light transmissive substrate 10 is removed. It is about the thickness of about 0 to 2% of the transmitted light, and the halftone phase shift layer 11 except for the center portion M is added to the transmitted light when the translucent substrate 12 except for the center portion M is added. It is the thickness t that can invert the phase while transmitting about 7-10% of light.

As shown in FIG. 13C, after the second photoresist film PR ₁₁ is deposited on the entire surface of the halftone phase shift layer 11, an open region formation region is defined to pattern the second photoresist film PR ₁₁ . At this time, the halftone phase shifting layer 11 other than the center portion M of the halftone phase shifting layers ₁₁ under the second photosensitive film PR ₁₁ is an edge portion E. FIG.

As shown in FIG. 13D, the open region 10 is formed by etching the halftone phase shift layer 11 until the light transmissive substrate 12 is exposed by an etching process using the second photoresist film PR ₁₁ as a mask. . Next, the second photosensitive film PR ₁₁ is removed.

The attenuation type phase shift mask according to the present invention has the following effects.

First, a halftone phase shift layer is formed on the side of the open area to generate an amplitude opposite to that generated by light passing through the open area, thereby providing an attenuated phase reversal mask having a sharp inclination of light intensity in the open area. .

Second, the thickness of the halftone phase shift layer is so thick that the exposure light can hardly pass through the overlapping portion of the light passing through the four open regions, thereby effectively preventing side lobes that may occur in the portion, thereby providing highly reliable attenuation. A phase inversion mask can be provided.

Claims (11)

The center portion formed on the light-transmissive substrate and on the light-transmissive substrate and having an open area, except for the open area, has its center portion not having a phase shift and having a thickness thinner than the center portion at both sides of the center portion without performing a phase shift. A phase inversion mask comprising an inverted T-shaped halftone phase shift layer having a thickness thinner than the center portion at both sides and performing a phase shift The phase shift mask of claim 1, wherein a translucent film is further formed on the halftone phase shift layer. The phase shift mask of claim 1, further comprising a translucent film between the halftone phase shifting layer excluding the open region and the light transmissive substrate. The phase shift mask according to claim 2 or 3, wherein the light transmissive layer is made of SiO ₂ . The phase shift mask of claim 1, wherein the transparent substrate of the open area is etched to a predetermined thickness. Preparing a light transmissive substrate; Forming a halftone phase shift layer on the transparent substrate; Removing the halftone phase shifting layer at an edge of the open region and the halftone phase shifting layer to a predetermined thickness; And etching the halftone phase shift layer in the open area to expose the light transmissive substrate. The method of manufacturing a phase shift mask according to claim 6, wherein when the halftone phase shift layer is formed on the light transmissive substrate, it has a transmittance of 2% or less with respect to the exposure light. 7. The method of claim 6, wherein the removal range when the thickness of the halftone phase shift layer is removed at the edge of the open region and the halftone phase shift layer is removed, and the transmittance of the remaining halftone phase shift layer with respect to light is 7-10%. Method for producing a phase inversion mask, characterized in that until. The method of claim 6, wherein the halftone phase shift layer is formed of any one of MoSiO, MoSiON, CrO and CrON when the incident light wavelength is 365nm, and when formed at 248nm, any one of MoSiO and Cr. Method of manufacturing a satellite inversion mask. The method of claim 6, wherein the light passing through the edge of the halftone phase shift layer is formed to have an amplitude difference of 160 ° to 200 ° from light passing through the open area. Preparing a light transmissive substrate; Removing a thickness of the translucent substrate in the center portion forming region of the halftone phase shift layer; Forming a halftone phase shifting layer over the light transmissive substrate; And removing the halftone phase shifting layer except for the center portion and the edge portion of the halftone phase shifting layer so that the light-transmissive substrate is exposed to form an open region.