KR100235963B1 - Semiconductor memory device and manufacture thereof - Google Patents

Semiconductor memory device and manufacture thereof Download PDF

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Publication number
KR100235963B1
KR100235963B1 KR1019960067439A KR19960067439A KR100235963B1 KR 100235963 B1 KR100235963 B1 KR 100235963B1 KR 1019960067439 A KR1019960067439 A KR 1019960067439A KR 19960067439 A KR19960067439 A KR 19960067439A KR 100235963 B1 KR100235963 B1 KR 100235963B1
Authority
KR
South Korea
Prior art keywords
manufacture
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019960067439A
Other languages
Korean (ko)
Other versions
KR19980048793A (en
Inventor
Dae-Young Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Priority to KR1019960067439A priority Critical patent/KR100235963B1/en
Publication of KR19980048793A publication Critical patent/KR19980048793A/en
Application granted granted Critical
Publication of KR100235963B1 publication Critical patent/KR100235963B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1019960067439A 1996-12-18 1996-12-18 Semiconductor memory device and manufacture thereof KR100235963B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960067439A KR100235963B1 (en) 1996-12-18 1996-12-18 Semiconductor memory device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960067439A KR100235963B1 (en) 1996-12-18 1996-12-18 Semiconductor memory device and manufacture thereof

Publications (2)

Publication Number Publication Date
KR19980048793A KR19980048793A (en) 1998-09-15
KR100235963B1 true KR100235963B1 (en) 1999-12-15

Family

ID=19488853

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960067439A KR100235963B1 (en) 1996-12-18 1996-12-18 Semiconductor memory device and manufacture thereof

Country Status (1)

Country Link
KR (1) KR100235963B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3178438B2 (en) * 1998-11-20 2001-06-18 日本電気株式会社 Semiconductor device and manufacturing method thereof
KR100442868B1 (en) * 2002-01-23 2004-08-02 삼성전자주식회사 Forming method of fuse in semiconductor device

Also Published As

Publication number Publication date
KR19980048793A (en) 1998-09-15

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