KR100220867B1 - Method triming of semiconductor package and structure apparatus of triming - Google Patents

Method triming of semiconductor package and structure apparatus of triming Download PDF

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Publication number
KR100220867B1
KR100220867B1 KR1019960061958A KR19960061958A KR100220867B1 KR 100220867 B1 KR100220867 B1 KR 100220867B1 KR 1019960061958 A KR1019960061958 A KR 1019960061958A KR 19960061958 A KR19960061958 A KR 19960061958A KR 100220867 B1 KR100220867 B1 KR 100220867B1
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South Korea
Prior art keywords
flash
tie bar
cutting
semiconductor package
trimming
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KR1019960061958A
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Korean (ko)
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KR19980043967A (en
Inventor
고인규
신인규
손현주
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김규현
아남반도체주식회사
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Priority to KR1019960061958A priority Critical patent/KR100220867B1/en
Publication of KR19980043967A publication Critical patent/KR19980043967A/en
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Publication of KR100220867B1 publication Critical patent/KR100220867B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions

Abstract

본 발명은 반도체패키지용 트리밍 방법 및 트리밍 장치구조에 관한 것이다.The present invention relates to a trimming method and a trimming device structure for a semiconductor package.

본 발명에서는 두께가 얇은 반도체패키지의 패키지 성형 완료된 제품에 생성된 플래쉬(30)와 복수개의 타이바(21)를 컷팅 제거시키기 위해 트리밍펀치(10)에 플래쉬컷팅부(11)와 복수개의 타이바컷팅부(12)(13)를 형성하여 플래쉬의 제거 및 타이바의 컷팅성을 좋게 하고, 나아가 반도체패키지에 가해지는 스트레스를 최소화하여 칩 아웃 및 패키지의 파손을 방지하는 효과를 제공토록 한 것이다.In the present invention, the flash cutting unit 11 and the plurality of tie bars in the trimming punch 10 to cut and remove the flash 30 and the plurality of tie bars 21 generated in the package-molded product of a thin semiconductor package. The cutting parts 12 and 13 are formed to improve the removal of the flash and the cutability of the tie bar, and further, to minimize the stress applied to the semiconductor package and to prevent chip out and damage to the package.

[색인어][Index]

반도체패키치용 트리밍 방법 및 트리밍 장치구조임Trimming method and trimming device structure for semiconductor package

Description

반도체패키지용 트리밍 방법 및 트리밍 장치구조Trimming method and trimming device structure for semiconductor package

본 발명은 반도체패키지용 트리밍 방법 및 트리밍 장치구조에 대한 것으로, 특히 두께가 얇은 반도체패키지(TQFP)의 패키지 성형 완료 후 런너측의 타이바에 잔류된 폐 컴파운드수지의 플래쉬와 타이바의 컷팅을 단계적으로 실시할 수 있도록 한 반도체패키지용 트리밍 방법 및 트리밍 장치구조에 관한 것이다.The present invention relates to a trimming method and a trimming device structure for a semiconductor package. Particularly, after completion of package molding of a thin-thin semiconductor package (TQFP), the flash of the waste compound resin remaining in the tie bar on the runner side and the cutting of the tie bar in stages are performed. The present invention relates to a trimming method and a trimming device structure for a semiconductor package.

일반적으로 두께가 얇은 반도체패키지는 각종 기기의 부피는 축소되고, 성능은 증대되는 관계로 이에 대응되는 반도체패키지가 요구되었고, 이에 대응하는 반도체패키지는 기존의 반도체패키지 크기보다 작고 그 두께는 보다 얇은 반도체패키지를 요구하게 되었다.In general, a thinner semiconductor package is required to have a semiconductor package corresponding to the reduced volume and performance of various devices, and a corresponding semiconductor package is smaller than a conventional semiconductor package and its thickness is thinner. You are asked for a package.

이러한 초박형 반도체패키지는 크기와 두께가 더욱 작게 구비됨에 제조과정에서 까다로운 작업성이 요구되었으며, 그에 따라 그 부자재인 리드프레임(얇은 구리판에 반도체칩 탑재판과 리드와 타이바 및 가이드레일이 가공 형성되어 있음)의 구조에 있어서도 컴파운드수지가 공급되는 런너측의 타이바가 수지압력에 대한 보강성을 높일 수 있도록 복수개가 구비되는 구성을 하고 있다.Since the ultra-thin semiconductor package has a smaller size and thickness, it requires more workability during the manufacturing process. Accordingly, a lead frame (a thin copper plate, a semiconductor chip mounting plate, a lead, a tie bar, and a guide rail) is formed. Also, a plurality of tie bars on the runner side to which the compound resin is supplied are provided so as to enhance reinforcement against the resin pressure.

이와 같은 종래의 반도체패키지 제조방법에 있어서는 플래쉬(30)와 타이바(21)를 제거하기 위한 트리밍펀치는 제6, 제7도에서 보는 바와 같이 업/다운되는 펀치(50)의 일측 모서리 부분에 평면상으로 플래쉬 제거 및 복수개의 타이바(21)를 컷팅시키는 컷팅부(51)가 구비되어 있다.In the conventional method of manufacturing a semiconductor package, the trimming punch for removing the flash 30 and the tie bar 21 is formed at one corner of the punch 50 which is up / down as shown in FIGS. 6 and 7. The cutting part 51 which removes a flash and cuts the some tie bar 21 on a plane is provided.

이러한 펀치(50)는 몰드공정에서 패키지 성형이 완료된 반도체패키지 자체를 플래쉬(30) 및 타이바(21)의 컷팅을 위해 제7도에서와 같이 작동시키면 컷팅부(51)에서 플래쉬(30)와 타이바(21)가 동시에 컷팅되어 제거된다.The punch 50 is operated by the semiconductor package itself after the package molding in the mold process as shown in FIG. 7 for cutting the flash 30 and the tie bar 21 and the flash 30 in the cutting portion 51 The tie bar 21 is cut and removed at the same time.

그러나, 두께가 매우 얇은 반도체패키지의 플래쉬(30) 및 타이바(21)의 컷팅시 평면상의 컷팅부(51)가 플래쉬(30)와 복수개의 타이바(21)를 동시에 제거 및 컷팅시이므로서 이에 가해지는 충격력이 큼에 따라 스트레스가 심하게 발생되어 패키지의 파손 및 칩 아웃 불량이 발생되고, 플래쉬의 제거가 용이하지 못한 폐단이 있었다.However, when the flash 30 and the tie bar 21 of the semiconductor package having a very thin thickness are cut at the same time as the cut portion 51 on the plane removes and cuts the flash 30 and the plurality of tie bars 21 simultaneously. As the impact force applied thereto is high, stress is severely generated, resulting in breakage of the package and defective chip out, and closure of the flash is difficult to remove.

본 발명은 상기와 같은 종래의 문제점을 해결하기 위하여 발명한 것으로, 패키지 성형이 완료된 반도체패키지의 런너측에 형성된 플래쉬와 복수개의 타이바를 제거시키기 위해 트리밍펀치에 플래쉬컷팅부와 복수개의 타이바를 단계적(순차적)으로 컷팅시키기 위한 타이바컷팅부를 형성하여 플래쉬의 제거 및 타이바의 컷팅성을 좋게 하는 것을 목적으로 한다.The present invention is invented to solve the above-mentioned conventional problems, the step of forming a flash cutting portion and a plurality of tie bars in the trimming punch to remove the flash and the plurality of tie bars formed on the runner side of the package completed semiconductor package ( It is an object of the present invention to form a tie bar cutting portion for cutting in a sequential manner and to remove the flash and improve the cutting property of the tie bar.

제1도는 본 발명의 적용상태도.1 is an application state of the present invention.

제2도는 본 발명의 트리밍펀치의 사시도.2 is a perspective view of a trimming punch of the present invention.

제3도는 본 발명의 작동상태를 나타낸 평면구조도.3 is a plan view showing an operating state of the present invention.

제4도는 본 발명의 다른 실시예의 트리밍펀치의 사시도.4 is a perspective view of a trimming punch in another embodiment of the present invention.

제5도는 본 발명의 다른 실시예의 작동상태를 나타낸 평면구조도.5 is a plan view showing an operating state of another embodiment of the present invention.

제6도는 종래의 트리밍 펀치의 사시도.6 is a perspective view of a conventional trimming punch.

제7도는 종래의 작동상태도.7 is a conventional operating state.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

10 : 트리밍펀치 11 : 플래쉬컷팅부10: trimming punch 11: flash cutting unit

12, 13 : 타이바컷팅부 20 : 패키지12, 13: tie bar cutting portion 20: package

21 : 타이바 30 : 플래쉬21: tie bar 30: flash

이하, 본 발명의 구성을 설명하면 다음과 같다.Hereinafter, the configuration of the present invention will be described.

두께가 얇은 반도체패키지의 패키지 성형 완료된 제품의 플래쉬(30)와 복수개의 타이바(21)를 컷팅시키는 트리밍 장치의 트리밍펀치(10)에 있어서,In the trimming punch 10 of the trimming apparatus for cutting the flash 30 and the plurality of tie bars 21 of the package-molded product of a thin semiconductor package,

상기 트리밍펀치(10) 하부에 하향돌출된 플래쉬컷팅부(11)와 이 양측에 단계적으로 복수개의 타이바컷팅부(12)(13)를 3단계 높이차를 갖도록 형성한 것이다.The lower portion of the trimming punch 10 is formed to have a three-step height difference between the flash cut portion 11 protruding downward and a plurality of tie bar cut portions 12 and 13 stepwise on both sides thereof.

상기한 트리밍펀치(10)는 제품의 플래쉬(30)와 타이바(21)의 제거를 위해 제품에 형성된 플래쉬(30)를 젝거하는 플래쉬제거 1단계와;The trimming punch 10 includes a flash removal step 1 for ejecting the flash 30 formed in the product to remove the flash 30 and the tie bar 21 of the product;

상기 제품의 일측 타이바(21)를 컷팅시키는 타이바컷팅 2단계와;A tie bar cutting step 2 for cutting one side tie bar 21 of the product;

상기 일측 타이바(21)와 대응된 타측의 타이바(21)를 컷팅시키는 타이바컷팅 3단계를 거쳐 3단계로 플래쉬의 제거 및 복수개의 타이바 컷팅작업이 이루어지도록 한 것이다.Through the tie bar cutting three steps of cutting the tie bar 21 of the other side corresponding to the one side tie bar 21, the flash is removed and a plurality of tie bar cutting operations are performed in three steps.

이와 같이된 본 발명의 일 실시예를 첨부 도면에 의하여 상세히 설명하면 다음과 같다.An embodiment of the present invention as described above will be described in detail with reference to the accompanying drawings.

제1도는 본 발명의 적용상태도로서 몰드공정에서 패키지 성형이 완료된 반도체 패키지의 트리밍 장치의 개략도이다.1 is a schematic diagram of a trimming apparatus for a semiconductor package in which package molding is completed in a mold process as an application state diagram of the present invention.

상기한 트리밍 장치에서 런너측의 플래쉬(30)와 타이바(21)를 제거하기 위한 트리밍펀치(10)는 핀치컷공정(PCP)에서 시행된다.In the trimming apparatus, the trimming punch 10 for removing the runner side flash 30 and the tie bar 21 is performed in a pinch cut process (PCP).

핀치컷공정에서는 두께가 얇은 반도체패키지의 패키지 성형시 컴파운드수지의 충진공급 압력에 대하여 보강성이 유지될 수 있도록 구비된 복수개의 타이바(21)가 구비된 런너측으로 컴파운드수지가 공급되어 소정형태의 패키지가 형성될 수 있게 한다.In the pinch cut process, a compound resin is supplied to a runner side having a plurality of tie bars 21 provided so that reinforcement can be maintained with respect to the filling supply pressure of the compound resin when forming a package of a thin semiconductor package. Allow the package to be formed.

이때 런너측의 타이바(21)에는 컴파운드수지의 공급에 의한 플래쉬(30)가 생성된다.At this time, the tie 30 on the runner side generates a flash 30 by supplying a compound resin.

따라서, 플래쉬(30)의 제거와 타이바(21)를 컷팅시키기 위한 트리밍 작업을 수행하게 되는 것으로, 트리밍 장치의 트리밍펀치(10) 하부에 구비된 다이(D) 상부에 자재(몰드공정에서 패키지 성형이 완료된 반도체패키지 제품)를 공급시킨 후 트리밍펀치(10)를 하강시키면 플래쉬컷팅부(11)가 타이바(21)의 내측에 전류되어 있는 플래쉬(30)를 1단계로 먼저 제거하고, 플래쉬컷팅부(11)의 일측에 구비된 타이바컷팅부(12)가 2단계로 일측의 타이바(21)를 컷팅시키며, 다음에는 플래쉬컷팅부 (11)의 타측에 형성된 다른 타이바컷팅부(13)가 상기 일측의 타이바(21)와 대응하는 타측의 타이바(21)를 차례로 컷팅시킨다.Therefore, the removal of the flash 30 and the trimming operation for cutting the tie bar 21 are performed, and the material (package in the molding process) is placed on the die D provided below the trimming punch 10 of the trimming apparatus. After supplying the molded semiconductor package), the trimming punch 10 is lowered, and then the flash cutting unit 11 first removes the flash 30 that is current inside the tie bar 21 in one step. The tie bar cutting portion 12 provided on one side of the cutting portion 11 cuts the tie bar 21 on one side in two stages, and then another tie bar cutting portion formed on the other side of the flash cutting portion 11 ( 13 sequentially cuts the tie bar 21 on the one side and the tie bar 21 on the other side.

이와 같은 트리밍펀치(10)의 다른 실시예에 있어서는 제4도, 5도에서 보는 바와 같이 플래쉬(30)와 타이바(21)를 4단계로 제거시키도록 구성한다.In another embodiment of the trimming punch 10 as described above, the flash 30 and the tie bar 21 are removed in four steps as shown in FIGS. 4 and 5.

이는 런너측 부위에 하향돌출된 플래쉬컷팅부(11)와 이 일측에 타이바컷팅부(12)와 이 타측에 타이바컷팅부(13)를 단계적으로 형성하고, 상기 각 타이바컷팅부(12)(13)의 일측(내측)에는 소정각도로 경사면(15)을 형성한다.It is a step of forming a flash cutting portion 11 protruded downward on the runner side portion, tie bar cutting portion 12 on one side and tie bar cutting portion 13 on the other side, and each tie bar cutting portion 12 On one side (inner side) of the 13 is formed an inclined surface 15 at a predetermined angle.

이러한 트리밍펀치(10)는 트리밍 작업시 플래쉬컷팅부(11)가 1단계로 타이바(12) 내부의 플래쉬(30)를 제거하고, 일측의 타이바컷팅부(12)와 타측의 타이바컷팅부(13)가 복수개의 타이바(21)를 2단계 및 3단계로 컷팅을 완료한 후, 컷팅된 플래쉬(30)와 타이바(21)를 4단계에서 경사면(15)이 하향으로 가압시켜 컷팅된 플래쉬(30)와 타이바(21)가 트리밍펀치(10)에서 쉽게 분리될 수 있게 한 것이다.In the trimming punch 10, the trimming operation removes the flash 30 inside the tie bar 12 in one step, and the tie bar cutting portion 12 on one side and the tie bar cutting on the other side. After the part 13 finishes cutting the plurality of tie bars 21 in two and three steps, the inclined surface 15 is pressed downward by pressing the cut flash 30 and the tie bars 21 in four steps. The cut flash 30 and tie bar 21 can be easily separated from the trimming punch 10.

이상에서와 같이 본 발명은 패키지 성형이 완료된 반도체패키지의 런너측에 형성된 플래쉬(30)와 복수개의 타이바(21)를 제거시키기 위해 트리밍펀치(10)에 플래쉬컷팅부(11)와 복수개의 타이바(21)를 단계적(순차적)으로 컷팅시키기 위한 타이바컷팅부(12)(13)를 형성하여 플래쉬(30)의 제거 및 타이바(21)의 컷팅성을 좋게하고, 반도체패키지에 가해지는 스트레스를 최소화하여 칩 아웃 및 패키지의 파손을 방지하는 효과를 제공하게 된다.As described above, in the present invention, the flash cutting unit 11 and the plurality of ties are disposed on the trimming punch 10 to remove the flash 30 and the plurality of tie bars 21 formed on the runner side of the semiconductor package in which package molding is completed. Tie bar cutting portions 12 and 13 for cutting the bars 21 in steps (sequential) are formed to remove the flash 30 and to cut the tie bars 21 and to be applied to the semiconductor package. Minimizing stress provides the effect of preventing chip out and package breakage.

Claims (4)

두께가 얇은 반도체패키지의 패키지(20) 성형 완료된 제품의 런너측에 형성된 플래쉬(30)의 제거 및 복수개의 타이바(21)를 컷팅시키는 방법에 있어서, 상기 제품에 형성된 플래쉬(30)를 제거하는 플래쉬제거 1단계; 상기 제품의 일측 타이바(21)를 컷팅시키는 타이바컷팅 2단계; 상기 일측 타이바(21)와 대응된 타이바(21)를 컷팅시키는 타이바컷팅 3단계; 를 거쳐 플래쉬(30)와 복수개의 타이바(21)를 3단계로 컷팅 제거시키는 것을 특징으로 하는 반도체패키지용 트리밍 방법.In the method of removing the flash 30 formed on the runner side of the molded product of the package 20 of the thin semiconductor package and cutting the plurality of tie bars 21, the flash 30 formed on the product is removed. Flash removal step 1; Tie bar cutting step 2 for cutting one side tie bar 21 of the product; A tie bar cutting step 3 for cutting the tie bars 21 corresponding to the one side tie bars 21; Trimming method for a semiconductor package, characterized in that by cutting through the flash 30 and the plurality of tie bars 21 in three steps. 제1항에 있어서, 상기 플래쉬제거 1단계와 타이바컷팅 2단계와 타이바컷팅 3단계에 더하여, 컷팅된 복수개의 타이바(21)를 하측으로 밀어 트리밍펀치(10)에 플래쉬(30)와 타이바(21)가 붙는 것을 방지토록 하는 흡착방지 4단계;를 포함하는 것을 특징으로 하는 반도체패키지용 트리밍 방법.The method of claim 1, wherein in addition to the flash removal step 1, tie bar cutting step 2 and tie bar cutting step 3, the plurality of cut tie bar 21 is pushed downward to the trimming punch (10) and the flash 30 and Trimming method for a semiconductor package comprising a; 4 step of adsorption prevention to prevent the tie bar (21) to stick. 두께가 얇은 반도체패키지의 패키지 성형 완료된 플래쉬(30)와 복수개의 타이바(21)를 컷팅시키는 트리밍 장치에 있어서, 트리밍펀치(10)의 하부에 하향돌출되며, 복수개의 타이바(21) 내부측에 있는 플래쉬(30)를 제거시킬 수 있게 한 플래쉬컷팅부(11); 상기 플래쉬컷팅부(11)의 일측에 형성되어 일측의 타이바(21)를 컷팅하는 타이바컷팅부(12); 상기 플래쉬컷팅부(11)의 타측에 형성되며, 일측의 타이바(21)와 대응되는 타측의 타이바(21)를 컷팅하는 타이바컷팅부(13);를 3단계의 높이차를 갖도록 구성함을 특징으로 하는 반도체패키지용 트리밍 장치구조.In a trimming device for cutting a package-molded flash 30 and a plurality of tie bars 21 of a thin semiconductor package, the trimming device protrudes downwardly from the bottom of the trimming punch 10, and the inside of the plurality of tie bars 21. A flash cut portion 11 to remove the flash 30 in the portion; A tie bar cutting unit 12 formed on one side of the flash cutting unit 11 to cut the tie bar 21 on one side; It is formed on the other side of the flash cutting portion 11, the tie bar cutting portion 13 for cutting the tie bar 21 of the other side corresponding to the tie bar 21 on one side; configured to have a three-step height difference Trimming device structure for a semiconductor package, characterized in that. 제3항에 있어서, 상기 트리밍펀치(10)를 구성하는 타이바컷팅부(12) (13)의 일측면에, 컷팅된 플래쉬(30) 및 타이바(21)가 트리밍펀치(10)에 흡착되는 것을 방지하도록 가압시킬 수 있는 경사면(15)을 더 구비하는 것을 특징으로 하는 반도체패키지용 트리밍 장치구조.The cutting flash 30 and the tie bar 21 are adsorbed to the trimming punch 10 by one side of the tie bar cutting portions 12 and 13 constituting the trimming punch 10. Trimming device structure for a semiconductor package, characterized in that it further comprises an inclined surface 15 that can be pressed to prevent it.
KR1019960061958A 1996-12-05 1996-12-05 Method triming of semiconductor package and structure apparatus of triming KR100220867B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223357A (en) * 1982-06-22 1983-12-24 Fujitsu Ltd Cut shaping die

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58223357A (en) * 1982-06-22 1983-12-24 Fujitsu Ltd Cut shaping die

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