KR100219476B1 - Reflective thin-film transistor liquid crystal display elements and its manufacturing method - Google Patents
Reflective thin-film transistor liquid crystal display elements and its manufacturing method Download PDFInfo
- Publication number
- KR100219476B1 KR100219476B1 KR1019960005305A KR19960005305A KR100219476B1 KR 100219476 B1 KR100219476 B1 KR 100219476B1 KR 1019960005305 A KR1019960005305 A KR 1019960005305A KR 19960005305 A KR19960005305 A KR 19960005305A KR 100219476 B1 KR100219476 B1 KR 100219476B1
- Authority
- KR
- South Korea
- Prior art keywords
- gate
- forming
- liquid crystal
- pad
- crystal display
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 239000010409 thin film Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 69
- 239000010408 film Substances 0.000 claims abstract description 56
- 238000000206 photolithography Methods 0.000 claims abstract description 49
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 229910000583 Nd alloy Inorganic materials 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 239000011651 chromium Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004983 Polymer Dispersed Liquid Crystal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
반사형 박막 트랜지스터-액정 표시 소자 및 그 제조방법에 대해 기재되어 있다. 본 발명에 따른 반사형 박막트랜지스터-액정표시소자는 TFT부의 오믹층 패턴 하부에 반도체막을 보호하기 위한 식각저지막을 구비하고, 패드부에는 TFT부의 소오스 및 드레인 전극과 동일한 물질로 구성되고 소오스 및 드레인 전극과 동시에 형성된 게이트 패드를 구비하며, 게이트 패드와 인접한 게이트는 반사판 패턴에 의해 연결된다. 따라서, TFT의 안정된 특성을 얻을 수 있으며, 5차의 사진식각공정만으로 제작이 가능하여, 공정시간의 단축화와 생산비의 절감등을 성취할 수 있다.A reflective thin film transistor-liquid crystal display device and a method of manufacturing the same are described. The reflective thin film transistor-liquid crystal display device according to the present invention includes an etch stop film for protecting the semiconductor film under the ohmic layer pattern of the TFT portion, and the pad portion is made of the same material as the source and drain electrodes of the TFT portion, and the source and drain electrodes And a gate pad formed at the same time, and the gate pad and the adjacent gate are connected by a reflector pattern. Therefore, the stable characteristics of the TFT can be obtained, and it can be manufactured only by the fifth photolithography process, so that the process time can be shortened and the production cost can be reduced.
Description
제1도는 일반적인 액정 표시 소자(LCD)의 레이아웃을 설명하기 위한 개략도이다.1 is a schematic diagram for explaining a layout of a general liquid crystal display device (LCD).
제2도는 종래 7차의 사진식각공정을 통하여 제작된 TFT-LCD의 프로세스 구성을 나타낸 공정흐름도이다.2 is a process flow diagram showing the process configuration of a TFT-LCD manufactured through the conventional seventh photolithography process.
제3도 및 제4도는 본 발명에 의한 반사형 박막 트랜지스터-액정 표시 소자의 단면도들이다.3 and 4 are cross-sectional views of the reflective thin film transistor-liquid crystal display device according to the present invention.
제5도는 본 발명에 따른 5차의 사진식각공정을 통하여 제작된 반사형 TFT-LCD의 프로세스 구성을 나타낸 공정흐름도이다.5 is a process flowchart showing the process configuration of the reflective TFT-LCD fabricated through the fifth photolithography process according to the present invention.
제6a도 내지 제6e도 및 제7a도 내지 제7e도는 본 발명에 따른 반사형 박막 트랜지스터-액정 표시 소자의 제조방법을 공정순서별로 도시한 단면도들이다.6A through 6E and 7A through 7E are cross-sectional views illustrating a method of manufacturing a reflective thin film transistor-liquid crystal display device according to an exemplary embodiment of the present invention.
본 발명은 박막 트랜지스터(TFT:Thin Film Transistor)-액정 표시 소자(LCD:Liquid Crystal Display) 및 그 제조방법에 관한 것으로, 특히 사진식각공정수를 줄일 수 있는 TFT-LCD 및 그 제조방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor (TFT) -liquid crystal display (LCD) and a manufacturing method thereof, and more particularly to a TFT-LCD and a manufacturing method thereof, which can reduce the number of photolithography processes. .
화상정보시대에서 정보전달의 주 매개체인 표시장치의 퍼스널(personal)화, 스페이스(space) 절약화의 요구에 부응하여 지금까지 표시장치의 주종이었던 거대한 음극선관(CRT:Cathode-Ray Tube)을 대신하여 LCD, PDP(Plasma Display Panel), EL(Electro-Luminescence)등 각종 평판 표시장치가 개발되어 왔다. 그 중에서도 특히 LCD는 전기장에 의하여 분자의 배열이 변화하는 액정의 광학적 성질을 이용하는 액정기술과 반도체기술을 융합한 표시장치로서 평판 표시장치의 대명사로 불리고 있다. 이러한 LCD중에서 반사형 TFT-LCD는 기존의 화소전극을 반사판(알루미늄으로 구성됨)으로 대체하고, FLC나 PDLC를 사용하여 버스라인(bus line)을 없앤 저소비전력을 위주로 하는 방식을 채택하고 있으며, 최근에 개발되는 추세에 있다.In response to the demand for personalization and space saving of display devices, which are the main media of information transmission in the image information age, instead of the huge cathode ray tube (CRT) Accordingly, various flat panel display devices such as LCD, plasma display panel (PDP), and electro-luminescence (EL) have been developed. Among them, LCD is particularly called a synonym for flat panel display as a display device that combines liquid crystal technology and semiconductor technology using optical properties of liquid crystal whose molecules are changed by an electric field. Among these LCDs, the reflective TFT-LCD replaces the existing pixel electrode with a reflector (made of aluminum), and adopts a method that focuses on low power consumption by eliminating bus lines using FLC or PDLC. There is a trend to be developed on.
제1도는 일반적인 LCD의 레이아웃을 설명하기 위한 개략도이다.1 is a schematic diagram for explaining the layout of a general LCD.
제1도를 참조하면, 유리기판(1)상에 매트릭스(matrix) 형태로 게이트라인(3)과 데이타라인(7)이 형성되어 있고, 상기 게이트라인(3)의 한쪽 끝에는 게이트패드(5)가, 상기 데이타라인(7)의 한쪽 끝에는 데이타패드(9)가 각각 마련되어 있으며, 상기 하나의 게이트라인(3)과 하나의 데이타라인(7)에 의하여 둘러싸여지는 부분이 하나의 화소(11)를 이루게 된다.Referring to FIG. 1, a gate line 3 and a data line 7 are formed on a glass substrate 1 in a matrix form, and at one end of the gate line 3, a gate pad 5 is formed. A data pad 9 is provided at one end of the data line 7, and a portion surrounded by the one gate line 3 and one data line 7 defines one pixel 11. Is achieved.
제2도는 종래 7차의 사진식각공정을 통하여 제작된 TFT-LCD의 프로세스 구성을 나타낸 공정흐름도이다.2 is a process flow diagram showing the process configuration of a TFT-LCD manufactured through the conventional seventh photolithography process.
제2도를 참조하면, 머저 투광성기판인 유리기판상에 제1금속막 예컨대 크롬(Cr)과 알루미늄(A1) 합금이 적충된 금속막을 소정두께로 형성한 후 1차로 사진식각하여 게이트전극 및 게이트패드를 형성하고(단계 101), 상기 게이트전극이 형성된 기판을 양극산화한 후 2차로 사진식각하여 상기 게이트전극상에 양극산화막을 형성한다(단계 102). 이어서, 상기 양극산화막이 형성된 결과물 전면에 게이트절연막 및 제1반도체막 예컨대 비정질실리콘막을 형성한 후 3차로 사진식각하여 반도체패턴을 형성하며(단계 103), 상기 Cr과 A1 합금으로 구성된 게이트패드상의 절연막을 4차로 사진식각한 후 계속해서 상기 게이트패드를 이루를 금속막중 A1 합금을 제거하여 Cr으로 이루어진 게이트패드의 일부분을 노출시키고(단계 104), 결과물 전면에 오믹콘택(ohmic contact)을 위한 오믹층 예컨대 n+-Si과, 제2금속막 예컨대 A1, 또는 Cr, 또는 탄탈륨(Ta)등을 차례로 소정두께로 형성한 후 5차로 상기 오믹층과 제2금속막을 차례로 사진식각하여 소오스전극 및 트레인전극을 형성함으로써(단계 105), 상기 반도체패턴의 일부분을 노출시킨다. 계속해서, 상기 5차의 사진식각공정 후 결과물 전면에 TFT를 보호하기 위한 보호막을 형성한 후 6차로 사진식각한다(단계 106). 이때, 상기 게이트전극 및 게이트패드의 일부분이 노출되도록 상기 게이트절연막과 보호막의 식각율을 조정한다. 마지막으로, 상기 게이트전극 및 게이트패드의 일부분이 노출된 결과물 전면에 ITO(Indium Tin Oxide)막을 형성한 후 7차로 사진식각하여 화소전극을 형성함으로써(단계 107), 종래 게이트절연막위에 형성되던 화소전극을 TFT의 상부에 형성시킨 TFT-LCD를 완성한다.Referring to FIG. 2, a first metal film such as chromium (Cr) and aluminum (A1) alloy is formed on a glass substrate, which is a transparent substrate, to a predetermined thickness, and then firstly etched to form a gate electrode and a gate pad. (Step 101), and anodize the substrate on which the gate electrode is formed, and then photoetch it to form an anodization film on the gate electrode (Step 102). Subsequently, a gate insulating film and a first semiconductor film such as an amorphous silicon film are formed on the entire surface of the resultant product on which the anodization film is formed, followed by photolithography to form a semiconductor pattern (step 103), and an insulating film on a gate pad composed of the Cr and A1 alloys. After etching the photocatalytically, the A1 alloy of the metal film to form the gate pad is subsequently removed to expose a portion of the gate pad made of Cr (step 104), and an ohmic layer for ohmic contact on the front surface of the resultant. For example, n + -Si and a second metal film such as A1, Cr, or tantalum (Ta) are formed in a predetermined thickness, and the ohmic layer and the second metal film are sequentially etched in a fifth order so as to sequentially source and train electrodes. (Step 105), a portion of the semiconductor pattern is exposed. Subsequently, after the fifth photolithography process, a protective film for protecting the TFT is formed on the entire surface of the resultant product, and then photolithography is performed six times (step 106). In this case, an etch rate of the gate insulating layer and the passivation layer is adjusted to expose a portion of the gate electrode and the gate pad. Finally, an ITO (Indium Tin Oxide) film is formed on the entire surface of the gate electrode and a portion of the gate pad, and the pixel electrode is formed by photolithography seventh order (step 107), thereby forming a pixel electrode on the gate insulating film. TFT-LCD formed on top of the TFT is completed.
상술한 바와 같은 종래 7차의 사진식각공정을 통해 제작된 반사형 TFT-LCD는, 상기 오믹층, 소오스전극 및 드레인전극의 형성을 위한 사진식각공정중 상기 얇은 두께의 오믹층에 대한 식각량을 정확하게 조절하기 어려운 문제점이 있다. 이에 따라, 상기 오믹층의 식각이 과다하게 진행될 경우, 상기 반도체패턴의 일부분이 식각됨으로써 TFT부의 채널영역이 이상적인 경우 보다 좁아지게 되어 상기 TFT의 특성에 큰 영향을 미치는 문제점이 발생된다.The reflective TFT-LCD fabricated through the conventional seventh photolithography process as described above may provide an amount of etching of the thin layered ohmic layer during the photolithography process for forming the ohmic layer, the source electrode, and the drain electrode. There is a problem that is difficult to adjust correctly. Accordingly, when the ohmic layer is excessively etched, a portion of the semiconductor pattern is etched to make the channel region of the TFT portion narrower than the ideal case, which greatly affects the characteristics of the TFT.
또한, 종래 반사형 TFT-LCD를 제작하기 위해서는 최소한 7차례의 사진식각공정이 요구되어, 공정소요시간의 증가, 제조비용의 증가 및 불량 발생율의 상승에 따라 제조수율이 떨어지는 단점이 있다.In addition, in order to manufacture a conventional reflective TFT-LCD, at least seven photolithography processes are required, and thus, a manufacturing yield decreases due to an increase in process time, an increase in manufacturing cost, and an increase in defect occurrence rate.
또한, 게이트전극 저항으로 인한 RC 지연등의 신호지연 문제로 발생할 수 있는 크로스-토크(cross-talk)의 문제를 방지하기 위하여 상기 게이트전극은 A1으로 형성하여야 하고, 외부의 집적회로(IC)와 연결되는 게이트패드는 Cr을 사용하여 동일선상에 형성해야 하기 때문에, 제조공정이 복잡함은 물룬 상기 게이트전극과 게이트패드를 형성하기 위한 물질이 A1과 Cr으로 제약을 받는 어려움이 있다.In addition, in order to prevent cross-talk problems that may occur due to signal delay problems such as RC delay due to gate electrode resistance, the gate electrode should be formed of A1. Since the gate pads to be connected must be formed on the same line using Cr, the manufacturing process is complicated, and the material for forming the gate electrode and the gate pad is difficult to be restricted to A1 and Cr.
따라서 본 발명의 목적은 상기한 바와 같은 종래기술의 문제점을 해결하기 위하여 상기 오믹층 하부에 식각저지막을 구비하여 반도체패턴을 보호함으로써 안정된 TFT 특성을 얻을 수 있는 반사형 박막 트랜지스터-액정 표시 소자를 제공하는데 있다.Accordingly, an object of the present invention is to provide a reflective thin film transistor-liquid crystal display device capable of obtaining stable TFT characteristics by protecting an semiconductor pattern by including an etch stop layer under the ohmic layer in order to solve the problems of the prior art as described above. It is.
본 발명의 다른 목적은 상기 식각저지막을 구비한 새로운 구조의 반사형 박막 트랜지스터-액정 표시 소자를 종래의 제조방법에 비하여 사진식각 공정을 2단계 줄인 5차의 사진식각공정을 통하여 효율적으로 제작할 수 있는 방법을 제공하는데 있다.Another object of the present invention is to efficiently produce a reflective thin film transistor-liquid crystal display device having a etch stop layer through a fifth-order photolithography process in which the photolithography process is reduced by two steps as compared to a conventional manufacturing method. To provide a method.
상기한 목적을 달성하기 위한, 기판상에 복수개의 화소들이 매트릭스 형태로 배열된 TFT부와 게이트 패드들이 배열된 패드부로 구성된 액정 표시 소자에 있어서,In the liquid crystal display device comprising a TFT portion in which a plurality of pixels are arranged in a matrix form on a substrate and a pad portion in which gate pads are arranged to achieve the above object,
상기 화소는The pixel is
상기 기판 위에 형성된 게이트전극;A gate electrode formed on the substrate;
상기 게이트전극을 덮도록 형성된 게이트절연막;A gate insulating film formed to cover the gate electrode;
상기 게이트절연막 위에 형성된 반도체막;A semiconductor film formed on the gate insulating film;
상기 반도체막 상부에 형성되어 상기 반도체막을 보호하는 식각저지막 패턴;An etch stop layer pattern formed on the semiconductor layer to protect the semiconductor layer;
상기 반도체막과 연결되도록 형성된 오믹층 패턴;An ohmic layer pattern formed to be connected to the semiconductor film;
상기 오믹층 패턴위에 형성된 소오스 및 드레인전극; 및Source and drain electrodes formed on the ohmic layer pattern; And
상기 드레인 전극과 연결되는 반사판 패턴으로 구성되고,Consists of a reflector plate pattern connected to the drain electrode,
상기 패드부는 상기 소오스 및 드레인 전극과 동일한 물질로 구성되고 상기 소오스 및 드레인 전극과 동시에 형성된 게이트 패드를 구비하고,The pad part includes a gate pad formed of the same material as the source and drain electrodes and formed simultaneously with the source and drain electrodes,
상기 게이트 패드와 인접한 상기 게이트는 상기 반사판 패턴에 의해 연결되는 것을 특징으로 한다.The gate adjacent to the gate pad is connected by the reflector pattern.
상기한 다른 목적을 달성하기 위한, 기판상에 복수개의 화소들이 매트릭스 형태로 배열된 TFT부와 게이트 패드들이 배열된 패드 영역으로 구성된 액정 표시 소자의 제조 방법은,In order to achieve the above another object, a method of manufacturing a liquid crystal display device comprising a TFT portion in which a plurality of pixels are arranged in a matrix form on a substrate and a pad region in which gate pads are arranged,
상기 기판상에 제1 금속막을 형성한 후 1차의 사진식각공정을 통하여 상기 TFT부내에 게이트전극을 형성하는 단계;Forming a gate electrode in the TFT through a first photolithography process after forming a first metal film on the substrate;
상기 게이트전극이 형성된 결과물 전면에 게이트절연막 및 반도체막을 차례로 형성하는 단계;Sequentially forming a gate insulating film and a semiconductor film on the entire surface of the resultant product on which the gate electrode is formed;
상기 반도체막 위에 제1 절연막을 형성한 후 2차의 사진식각공정을 통하여 식각저지막 패턴을 형성하는 단계;Forming an etch stop layer pattern through a second photolithography process after forming a first insulating layer on the semiconductor layer;
상기 식각저지막 패턴이 형성된 결과물 전면에 오믹층 및 제2금속막을 차례로 형성한 후 3차의 사진식각공정을 실시함으로써 상기 TFT부에는 소오스 및 드레인전극을 형성하고 상기 패드부에는 게이트패드를 형성하는 단계;After forming an ohmic layer and a second metal film on the entire surface of the resultant product on which the etch stop layer pattern is formed, a third photolithography process is performed to form source and drain electrodes on the TFT portion and gate pads on the pad portion. step;
상기 3차의 사진식각공정 후 결과물 전면에 보호막을 형성한 후, 4차의 사진식각공정을 통하여 TFT부의 상기 드레인 전극의 일부분을 노출시킴과 동시에 상기 게이트 패드 미치 상기 게이트 패드와 인접한 상기 게이트 전극의 일부분을 각각 노출시키는 단계; 및After forming the passivation layer on the entire surface of the resultant after the third photolithography process, a portion of the drain electrode of the TFT portion is exposed through the fourth photolithography process and at the same time, the gate pad portion of the gate electrode adjacent to the gate pad is exposed. Exposing a portion respectively; And
상기 4차의 사진식각공정 후 결과물 전면에 제3 금속막을 형성한 후, 5차의 사진식각공정을 통하여 상기 드레인 전극과 연결되어 화소전극으로 사용되는 반사판 패턴 및 상기 게이트 패드와 인접한 상기 게이트 전극을 연결시켜주는 반사판 패턴을 형성하는 단계를 구비하여 이루어진 것을 특징으로 한다.After forming the third metal film on the entire surface of the resultant after the fourth photolithography process, the reflective plate pattern and the gate electrode adjacent to the gate pad connected to the drain electrode through the fifth photolithography process are used. It characterized by comprising a step of forming a reflecting plate pattern for connecting.
따라서, 본 발명에 의한 반사형 박막 트랜지스터-액정 표시 소자 및 그 제조방법에 의하면, 오믹층 하부에 식각저지막을 더 구비함으로써 종래 반도체패턴의 원치 않는 식각이 일어나는 문제점을 구조적으로 해결할 수 있을 뿐만 아니라, 종래에 비해 사진식각공정수를 2단계 줄인 5차의사진식각공정으로 반사형 박막 트랜지스터-액정 표시 소자를 제작함으로써 공정시간의 단축과 더불어 생산비 절감등을 얻을 수 있다.Therefore, according to the reflective thin film transistor-liquid crystal display device and the manufacturing method thereof according to the present invention, by further providing an etch stop layer under the ohmic layer, it is possible to structurally solve the problem that unwanted etching of the conventional semiconductor pattern occurs. By manufacturing the reflective thin film transistor-liquid crystal display device by the fifth photolithography process in which the number of photolithography processes is reduced by two steps as compared with the related art, it is possible to shorten the process time and reduce the production cost.
이하, 첨부한 도면을 참조하여 본 발명을 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described the present invention.
먼저, 본 발명에 의한 반사형 박막 트랜지스터-액정 표시 소자의 구조를 설명하기로 한다.First, the structure of the reflective thin film transistor-liquid crystal display element according to the present invention will be described.
제3도 및 제4도는 본 발명에 의한 반사형 박막 트랜지스터-액정 표시 소자의 단면도를 나타낸 것으로, 상기 제3도는 TFT 부분을, 제4도는 게이트패드 부분을 중심으로 도시한 것이다.3 and 4 show cross-sectional views of the reflective thin film transistor-liquid crystal display device according to the present invention, wherein FIG. 3 shows a TFT portion and FIG. 4 shows a gate pad portion.
제3도 및 제4도를 참조하면, 먼저 유리기판(100)위에 게이트전극(10)이 형성되어 있고, 이 게이트전극(10)이 형성된 결과물 전면에 게이트절연막(12)및 제1 반도체막(14)이 형성된 결과물 전면에 게이트절연막(12) 및 제1 반도체막(14)이 차례로 형성되어 있으며, 이 제1 반도체막(14) 위에 소정패턴의 식각저지막 패턴(16)이 형성되어 있고, 이 식각저지막 패턴(16)을 중심으로 양쪽에 상기 제1 반도체막(14)과 연결되는 오믹층(18)과 소오스전극/드레인전극(20A, 20B)이 형성되어 있으며, 이 소오스전극/드레인전극(20A, 20B)과 동일선상의 게이트절연막(12) 위에 게이트패드(20C)가 형성되어 있고, 보호막(22) 패턴을 개재하여 상기 드레인전극(20B)과 연결된 화소 전극으로 기능하는 반사판 패턴(24)과 상기 TFT부의 게이트전극(10)과 상기 패드부의 게이트패드(20C)가 연결되도록 보호막(22) 패턴을 개재하여 반사판 패턴(24)이 형성되어 있다. 화소 전극으로 기능하는 반사판 패턴(24)과 드레인 전극(20B)이 연결되는 부위는 제3도의 단면도 이외의 영역에 형성되기 때문에 반사판 패턴(24)과 드레인 전극(20B)을 연결하는 콘택트 홀이 제3도에는 도시되어 있지 않다.Referring to FIGS. 3 and 4, first, a gate electrode 10 is formed on the glass substrate 100, and the gate insulating film 12 and the first semiconductor film are formed on the entire surface of the product on which the gate electrode 10 is formed. The gate insulating film 12 and the first semiconductor film 14 are sequentially formed on the entire surface of the resultant formed product 14, and an etch stop film pattern 16 having a predetermined pattern is formed on the first semiconductor film 14, The ohmic layer 18 and the source electrode / drain electrodes 20A and 20B connected to the first semiconductor layer 14 and the source electrode / drain electrodes 20A and 20B are formed on both sides of the etch stop layer pattern 16. A gate pad 20C is formed on the gate insulating film 12 on the same line as the electrodes 20A and 20B, and functions as a pixel electrode connected to the drain electrode 20B via the passivation layer 22 pattern. 24 and the gate electrode 10 of the TFT portion and the gate pad 20C of the pad portion are connected. Homak 22 has the reflection plate pattern 24 is formed by sandwiching a pattern. The portion where the reflecting plate pattern 24 serving as the pixel electrode and the drain electrode 20B are connected is formed in a region other than the cross-sectional view of FIG. 3, so that the contact hole connecting the reflecting plate pattern 24 and the drain electrode 20B is formed. Not shown in 3 degrees.
다음으로, 본 발명에 의한 반사형 박막 트랜지스터-액정 표시 소자의 제조방법을 공정흐름도를 참조하면서, 개략적으로 설명하기로 한다.Next, a method of manufacturing a reflective thin film transistor-liquid crystal display element according to the present invention will be schematically described with reference to a process flow diagram.
제5도는 본 발명에 따른 5차의 사진식각공정을 통하여 제작된 반사형 TFT-LCD의 프로세스 구성을 나타낸 공정흐름도이다.5 is a process flowchart showing the process configuration of the reflective TFT-LCD fabricated through the fifth photolithography process according to the present invention.
제5도를 참조하면, 먼저 유리기판상에 소정의 금속물질을 형성한 후 1차의 사진식각공정을 통하여 게이트전극을 형성하고(단계 201), 이 게이트전극이 형성된 결과물 전면에 소정의 물질층들을 형성한 후 2차의 사진식각공정을 통하여 식각저지막 패턴을 형성하며(단계 202), 이 식각저지막 패턴이 형성된 결과물 전면에 소정의 물질층들을 형성한 후 3차의 사진식각공정을 통하여 게이트패드 및 소오스/드레인전극을 동시에 형성하고(단계 203), 이어서 결과물 전면에 보호막을 형성한 후 4차의 사진식각공정을 통하여 소오스/드레인 전극을 노출시킴과 동시에, 상기 게이트전극 및 게이트패드가 노출되도록 하며(단계 204), 노출된 게이트전극 및 게이트패드와 연결되는 반사판과 상기 소오스/드레인 전극과 연결되는 반사판을 형성함으로써(단계 205), 본 발명에 따른 반사형 박막 트랜지스터-액정 표시 소자를 완성한다.Referring to FIG. 5, first, a predetermined metal material is formed on a glass substrate, and then a gate electrode is formed through a first photolithography process (step 201), and predetermined material layers are formed on the entire surface of the resultant product on which the gate electrode is formed. After forming, an etch stop layer pattern is formed through a second photolithography process (step 202), and a predetermined material layer is formed on the entire surface of the resultant product on which the etch stop layer pattern is formed, and then a gate is formed through a third photolithography process. A pad and a source / drain electrode are simultaneously formed (step 203), a protective film is formed on the entire surface of the resultant, and then the source / drain electrode is exposed through the fourth photolithography process, and the gate electrode and the gate pad are exposed. (Step 204), by forming a reflective plate connected to the exposed gate electrode and the gate pad and a reflective plate connected to the source / drain electrode (step 205). A reflective thin-film transistor according to the - to complete the liquid crystal display device.
이와같은 프로세스 구성을 기초로 하여 5차의 사진식각공정을 통해 제작되는 반사형 박막 트랜지스터-액정 표시 소자의 구체적인 제조방법을 살펴보기로 한다.Based on this process configuration, a detailed manufacturing method of the reflective thin film transistor-liquid crystal display device manufactured through the fifth photolithography process will be described.
제6A도 내지 제6E도, 및 제7A도 내지 제7E도는 본 발명에 따른 반사형 박막 트랜지스터-액정 표시 소자의 제조방법을 나타낸 공정순서도로, 상기 제6A도 내지 제6E도는 TFT 부분을 나타낸 단면도들이고, 제7A도 내지 제7E도는 게이트패드 부분을 나타낸 단면도들이다.6A to 6E and 7A to 7E are process steps showing a method of manufacturing a reflective thin film transistor-liquid crystal display device according to the present invention, and FIGS. 6A to 6E are cross-sectional views showing TFT portions. 7A to 7E are cross-sectional views showing gate pad portions.
제6A도 및 제7A도는 1차의 사진식각공정을 통한 게이트전극(10)의 형성공정을 도시한 것으로, 유리기판(100)상에 제1 금속막 예컨대 A1-네오디뮴(Nd) 합금을 소정두께로 형성한 후 1차의 사진식각을 통하여 게이트전극(10)을 형성한다. 여기서, 상기 게이트전극(10)을 구성하는 물질로는 TFT-LCD의 대면적화, 고정세화(高精細化)를 구현할 수 있는 측면에서, 순수 A1의 기계적인 강도와 힐록(hillock)등의 문제를 해결하기 위하여 순수 A1에 근접하는 저항특성을 갖는 A1-Nd합금을 사용하며, 이로 인하여 양극산화 공정도 줄일 수 있다.6A and 7A illustrate a process of forming the gate electrode 10 through the first photolithography process, wherein a predetermined thickness of a first metal film such as A1-neodymium (Nd) alloy is formed on the glass substrate 100. After forming the gate electrode 10 through the first photolithography. Here, as the material constituting the gate electrode 10, in view of realizing a large area and high definition of the TFT-LCD, problems such as mechanical strength and hillock of pure A1 are solved. In order to solve this problem, A1-Nd alloys having resistance characteristics close to pure A1 are used, thereby reducing the anodization process.
제6B도 및 제7B도는 2차의 사진식각공정을 통한 식각저지막 패턴(16)의 형성공정을 도시한 것으로, 먼저 상기 게이트전극(10)이 형성된 결과물 전면에 소정두께의 게이트절연막(12) 예컨대 산화막 또는 질화막 및 제1 반도체막(14) 예컨대 비정실리콘막을 차례로 적층하여 형성한다. 이어서, 이 제1 반도체막(14) 위에 식각저지막 예컨대 질화막(SiNx)을 소정두께로 형성한 후 2차의 사진식각을 통하여 식각저지막 패턴(16)을 형성한다.6B and 7B illustrate a process of forming an etch stop layer pattern 16 through a secondary photolithography process. First, a gate insulating layer 12 having a predetermined thickness on the entire surface of the resultant product in which the gate electrode 10 is formed. For example, an oxide film or a nitride film and a first semiconductor film 14, for example, an amorphous silicon film, are stacked in this order. Subsequently, an etch stop film such as nitride film (SiN x ) is formed on the first semiconductor film 14 to a predetermined thickness, and then the etch stop film pattern 16 is formed through secondary photolithography.
제6C도 및 제7C도는 3차의 사진식각공정을 통한 소오스/드레인전극(20A, 20B)의 형성공정을 도시한 것으로, 상기 식각저지막 패턴(16)이 형성된 결과물 전면에 오믹층(18) 예컨대 n+-Si과, 제2금속막 예컨대 Cr을 소정두께로 차례로 적층한 후 3차의 사진식각을 통하여 상기 제2금속막을 패터닝함으로써 소오스/드레인전극(20A, 20B)을 형성한다. 이때, 제7C도에 도시된 바와 같이 게이트패드부에서는 Cr으로 구성된 게이트패드(20C)가 형성된다. 계속해서, 상기 소오스/드레인전극(20A, 20B)을 식각마스크로 사용하여 상기 오믹층(18)과 식각저지막패턴(16)의 일부분을 식각한다.6C and 7C illustrate a process of forming the source / drain electrodes 20A and 20B through the third photolithography process, wherein the ohmic layer 18 is formed on the entire surface of the resultant product in which the etch stop layer pattern 16 is formed. For example, source / drain electrodes 20A and 20B are formed by sequentially stacking n + -Si and a second metal film such as Cr to a predetermined thickness and then patterning the second metal film through third photolithography. At this time, as shown in FIG. 7C, a gate pad 20C made of Cr is formed in the gate pad part. Subsequently, the ohmic layer 18 and a portion of the etch stop layer pattern 16 are etched using the source / drain electrodes 20A and 20B as an etching mask.
제6D도 및 제7D도는 4차의 사진식각공정을 통한 제1 콘택트 홀(CH1) 및 제2 콘택트 홀(CH2)과 TFT부의 드레인 전극(20B)을 노출시키는 콘택트홀(미도시)의 형성공정을 도시한 것으로, 먼저 상기 제6C도 및 제7C도 공정 후 결과물 전면에 TFT를 보호하기 위하여 보호막(22) 예컨대 질화막(SiNx) 또는 아크릴수지를 소정두께로 형성한다. 이어서, 상기 보호막(22)과 상기 게이트절연막(12)에 대하여 4차의 사진식각공정을 실시함으로써, TFT부의 A1-Nd 합금으로 구성된 게이트전극(10)이 노출됨과 동시에 상기 Cr으로 구성된 게이트패드(20C)가 노출되도록 제1 콘택트 홀(CH1) 및 제2 콘택트 홀(CH2)이 형성된다. 이 때, TFT부의 드레인 전극(20B)을 노출시키는 콘택홀(미도시) 또한 동시에 형성한다. 드레인 전극(20B)을 노출시키는 콘택홀(미도시)은 제6D도의 단면도 이외의 영역에 형성된다.6D and 7D illustrate a process of forming a contact hole (not shown) exposing the first contact hole CH1 and the second contact hole CH2 and the drain electrode 20B of the TFT portion through the fourth photolithography process. First, the protective film 22, for example, a nitride film (SiN x ) or an acrylic resin, is formed to a predetermined thickness in order to protect the TFT on the entire surface of the resultant after the processes of FIGS. 6C and 7C. Subsequently, a fourth photolithography process is performed on the passivation layer 22 and the gate insulating layer 12 to expose the gate electrode 10 made of the A1-Nd alloy of the TFT portion, and at the same time, the gate pad made of Cr ( The first contact hole CH1 and the second contact hole CH2 are formed to expose 20C. At this time, a contact hole (not shown) for exposing the drain electrode 20B of the TFT portion is also formed at the same time. A contact hole (not shown) exposing the drain electrode 20B is formed in a region other than the cross sectional view of FIG. 6D.
제6E도 및 제7E도는 5차의 사진식각공정을 통한 반사판 패턴(24)의 형성공정을 도시한 것으로, 상기 제1 콘택트 홀(CH1), 제2 콘택트 홀(CH2) 및 상기 드레인 전극(20B)을 노출시키는 콘택홀(미도시)이 형성된 결과물 전면에 화소전극으로 사용되는 반사판 물질 예컨대 A1을 소정두께로 형성한 후, 이 물질층에 대하여 5차의 사진식각공정을 실시함으로써, 제7E도에 도시된 바와 같이 게이트 전극과 게이트 패드를 연결하는 반사판 패턴(24) 및 드레인 전극(20B)과 연결되어 화소 전극으로 기능하는 반사판 패턴(미도시)을 형성하여 본 발명에 따른 반사형 박막 트랜지스터-액정 표시 소자를 완성한다. 여기서, 상기 반사판을 구성하는 물질로는 순수한 A1을 사용하게 되는데, 그 이유는 상기 게이트전극 형성시 사용된 A1-Nd합금은 기계적으로 우수하여 힐록 방지의 효과가 있는 반면, 화학적으로는 순수한 A1 보다 약하기 때문이다. 즉, 상기 A1-Nd가 합금이 현상액, 스트리퍼(stripper), HF세정액등 각종 화학제에 노출될 경우 화학적 침식이 일어나고, 이로인해 불량의 TFT-LCD가 제작되는 경우를 방지하기 위해서이다. 또한, 스위칭소자인 TFT의 게이트라인에 인가되는 신호는, 먼저 Cr으로 구성된 게이트패드(20C)에 인가된 후 반사판 패턴(24)인 A1을 거쳐 A1-Nd 합금으로 구성된 게이트전극(10)으로 전달된다.6E and 7E illustrate a process of forming the reflector plate 24 through the fifth photolithography process, wherein the first contact hole CH1, the second contact hole CH2, and the drain electrode 20B are shown. Fig. 7E is formed by forming a reflective plate material A1, which is used as a pixel electrode, on the entire surface of the resultant formed contact hole (not shown) having a predetermined thickness, and then performing a fifth photolithography process on the material layer. Reflective thin film transistor according to the present invention is formed by forming a reflector pattern (not shown) connected to the reflector pattern 24 and the drain electrode 20B connecting the gate electrode and the gate pad as a pixel electrode as shown in FIG. Complete the liquid crystal display element. In this case, pure A1 is used as the material of the reflecting plate, because the Al-Nd alloy used in forming the gate electrode is mechanically superior to prevent hillock, whereas chemically pure A1 is used. Because it is weak. In other words, when the A1-Nd alloy is exposed to various chemicals such as developer, stripper, HF cleaning solution, and the like, chemical erosion occurs, thereby preventing a defective TFT-LCD from being produced. In addition, a signal applied to the gate line of the TFT, which is a switching element, is first applied to the gate pad 20C made of Cr, and then transferred to the gate electrode 10 made of an A1-Nd alloy via A1, which is a reflector plate pattern 24. do.
따라서, 본 발명에 의한 액정 표시 소자 및 그 제조방법에 의하면, 오믹층 하부에 반도체패턴을 보호하기 위한 식각저지막 예컨대 질화막을 구비함으로써 종래 오믹층의 형성시에 반도체패턴의 일부분이 식각되는 것을 구체적으로 제거할 수 있게 되어 TFT의 안정된 특성을 얻을 수 있다.Therefore, according to the liquid crystal display device and the method of manufacturing the same according to the present invention, an etching stop film for protecting the semiconductor pattern, for example, a nitride film, is provided below the ohmic layer to specifically etch a part of the semiconductor pattern during the formation of the conventional ohmic layer. Can be removed, and stable characteristics of the TFT can be obtained.
또한, 종래 7차의 사진식각공정을 통한 반사형 박막 트랜지스터-액정 표시 소자의 제조방법 중에서 약극산화막 형성을 위한 사진식각공정과, 반도체패턴 형성 후 게이트패드의 노출을 위한 사진식각공정의 2단계를 줄임으로써 5차의 사진식각공정만으로 제작이 가능하여, 공정시간의 단축화와 생산비의 절감등을 성취할 수 있다.In addition, two steps of a photolithography process for forming a weak oxide film and a photolithography process for exposing a gate pad after forming a semiconductor pattern are performed. By reducing, it is possible to manufacture only the 5th photolithography process, which can shorten the process time and reduce the production cost.
또한, A1-Nd 합금으로 구성된 게이트전극과 Cr로 구성된 게이트패드를 별도의 복잡한 공정 없이 형성할 수 있어서, 반사형 박막 트랜지스터-액정 표시 소자의 면적이 증대되고 고정세화될 경우에도 게이트전극 저항으로 인한 RC 지연등의 신호지연 문제로 발생되는 크로스-토크등의 불량을 방지할 수 있다.In addition, since the gate electrode made of A1-Nd alloy and the gate pad made of Cr can be formed without any complicated process, even if the area of the reflective thin film transistor-liquid crystal display element is increased and the resolution is increased, It is possible to prevent the crosstalk, which is caused by the signal delay problem such as the RC delay.
본 발명이 상기 실시예에 한정되지 않으며, 많은 변형이 본 발명의 기술적 사상내에서 당분야에서 통상의 지식을 가진 자에 의하여 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical idea of the present invention.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960005305A KR100219476B1 (en) | 1996-02-29 | 1996-02-29 | Reflective thin-film transistor liquid crystal display elements and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960005305A KR100219476B1 (en) | 1996-02-29 | 1996-02-29 | Reflective thin-film transistor liquid crystal display elements and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970062782A KR970062782A (en) | 1997-09-12 |
| KR100219476B1 true KR100219476B1 (en) | 1999-09-01 |
Family
ID=19452213
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960005305A KR100219476B1 (en) | 1996-02-29 | 1996-02-29 | Reflective thin-film transistor liquid crystal display elements and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100219476B1 (en) |
-
1996
- 1996-02-29 KR KR1019960005305A patent/KR100219476B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970062782A (en) | 1997-09-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100190023B1 (en) | Tft-lcd and fabrication method thereof | |
| US7012658B2 (en) | Substrate for liquid crystal display and liquid crystal display utilizing the same | |
| US7652740B2 (en) | Array substrate for LCD device having dual metal-layer gate and data lines and manufacturing method thereof | |
| US20100203687A1 (en) | Method of manufacturing an array substrate for lcd device having double-layered metal structure | |
| US7477350B2 (en) | Thin film array panel | |
| US7852443B2 (en) | Display device and method having pixel and terminal parts where an organic resin film disposed thereon has a film thickness adjusting area so that the terminal part film thickness is thinner than the pixel part film thickness | |
| US7417693B2 (en) | Liquid crystal display device and its manufacturing method | |
| JP2006330470A (en) | Liquid crystal display device and its manufacturing method | |
| US6825497B2 (en) | Active matrix substrate for a liquid crystal display and method of forming the same | |
| JP4646539B2 (en) | Liquid crystal display device and manufacturing method thereof | |
| US6717631B2 (en) | Array substrate for use in LCD device | |
| KR101015459B1 (en) | Manufacturing method of thin film transistor array substrate and display device | |
| US20070188682A1 (en) | Method for manufacturing a display device | |
| US20110025939A1 (en) | Liquid crystal display device and its manufacturing method | |
| US8304772B2 (en) | Thin-film transistor array panel and method of fabricating the same | |
| JP2000214481A (en) | Liquid crystal display device and its production | |
| US7521298B2 (en) | Thin film transistor array panel of active liquid crystal display and fabrication method thereof | |
| US6916691B1 (en) | Method of fabricating thin film transistor array substrate and stacked thin film structure | |
| US6861671B2 (en) | Thin film transistor liquid crystal display and fabrication method thereof | |
| KR100219476B1 (en) | Reflective thin-film transistor liquid crystal display elements and its manufacturing method | |
| KR100213191B1 (en) | Tft-lcd and its fabrication method | |
| KR19980025755A (en) | Thin film transistor-liquid crystal display device and manufacturing method thereof | |
| KR20030021382A (en) | Method for manufacturing liquid crystal display device | |
| KR100219477B1 (en) | Reflective thin-film transistor liquid crystal display elements and its manufacturing method | |
| JPH04253033A (en) | Liquid crystal display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20080528 Year of fee payment: 10 |
|
| LAPS | Lapse due to unpaid annual fee |