KR100211653B1 - Wet etching apparatus for semiconductor manufacturing - Google Patents

Abstract

The present invention relates to a wet etching apparatus for manufacturing a semiconductor capable of recovering pure water in order to recycle the pure water used for cleaning and preventing damage to the chemical and its vapor and heat chemical storage sink.

The present invention is integrally manufactured and spaced apart from the bottom surface of the chemical storage tank sink formed with a plurality of recovery outlets having a specific space and a protruding jaw at a specific location on the bottom of the overflow in the pure water storage tank for arm cleaning and the pure water storage tank for wafer cleaning. A base case having a plurality of pure water discharge ports for discharging the discharged pure water is installed, and a chemical storage tank is installed in the inner space of the base case so that the chemical discharged from the chemical storage tank is transferred to the outside through a buffer tank located outside the chemical storage tank sink. And configured to be released.

Therefore, the pure water used in the wet etching apparatus can be reused, and the inside of the wet etching apparatus can be prevented from splitting.

Description

Wet Etching Equipment for Semiconductor Manufacturing

1 is a schematic cross-sectional view showing a conventional wet etching apparatus for manufacturing a semiconductor.

2 is a cross-sectional view showing an embodiment of a wet etching apparatus for manufacturing a semiconductor according to the present invention.

* Explanation of symbols for main parts of the drawings

10, 40: chemical storage sink 12: waste liquid outlet

14, 44: base case base 16, 46: base case

18, 48: Chemical storage tank pedestal 20, 22, 50, 52: Chemical storage tank

24: Teflon tube 26, 56: buffer tank

28, 58: city water supply source 29: city water outlet

30: pure water storage tank for arm cleaning 32, 72: pure water storage tank for wafer cleaning

42: recovery outlet 47: pure water outlet

54: chemical piping line 57: discharge pipe

60: arm partition 62: pure storage tank for arm cleaning

64: pure pipe 66: pure storage tank pedestal for arm cleaning

68: pure water storage tank for arm cleaning 70: pure water storage tank for wafer cleaning

74: wafer partition

The present invention relates to a wet etching apparatus for manufacturing a semiconductor, and more particularly, to manufacturing a semiconductor capable of recovering pure water in order to recycle the pure water used for cleaning and preventing damage to the chemical storage tank sink caused by the chemical and its steam and heat. It relates to a wet etching device.

In general, a high temperature chemical having corrosiveness and toxicity is used in a process of manufacturing a semiconductor device, and a typical case is a wet etching process and a cleaning process.

The wet etching process removes polysilicon film, oxide film and nitride film using high temperature chemical, and the cleaning process also removes contaminants such as polymers, particles and heavy metals attached to the wafer surface using high temperature chemical. As a process, all of these processes take place in a wet etch apparatus.

1 is a schematic cross-sectional view showing a conventional wet etching apparatus for manufacturing a semiconductor in which a wet etching process is performed.

Referring to FIG. 1, each corner portion is welded to form a specific space, and a lower box bottom chemical storage sink 10 having a waste liquid outlet 12 is formed.

In addition, the chemical storage tank sink 10 has a plurality of base cases (base case): spaced apart from the bottom of the chemical storage sink 10 by the base 14, the base case 16 having a specific space is configured have.

In addition, the base case 16 is spaced apart from the base case 16 by a plurality of chemical storage base pedestal 18, the chemical storage tank (20, 22) having a specific space is composed of a heating device (not shown) 120 by 150 Maintaining the temperature of the degree, it is configured to perform the etching process using the chemical having the properties of corrosive, toxic, etc.

Since chemicals in the chemical storage tanks 20 and 22 must be maintained in a certain purity, the chemicals supplied from the chemical supply source (not shown) for this purpose are through a through hole formed in the upper sidewalls of the chemical storage tanks 20 and 22. It is configured to be released.

The chemical discharged through the through holes formed in the chemical reservoirs 20 and 22 is supplied to the buffer tank 26 through a Teflon tube 24 and mixed with the city water supplied from the city water supply source 28. It is.

The mixed solution of the chemical and the city water discharged from the buffer tank 26 is configured to be discharged to the outside through the waste liquid outlet 12 after being supplied to the bottom of the chemical reservoir sink (10).

In addition, the city water supplied from the city water supply source 28 is chemical storage tank sink 10 through a plurality of city water outlet 39 formed in the upper pipe line installed between the bottom of the chemical storage sink sink 10 and the base case 16. After being supplied to the bottom surface is discharged to the outside through the waste liquid outlet (12).

On one side of the chemical storage tanks 20 and 22, an arm cleaning pure water storage tank 30 supported by a pedestal is configured so that the pure water supplied from the pure water supply source (not shown) is overflowed and the chemical storage tank sink (10) It is configured to be mixed with the chemical and the city water supplied to the bottom surface and discharged from the buffer tank 26 to be discharged to the outside through the waste liquid discharge port (12).

In addition, on the other side of the chemical storage tanks 20 and 22, a pure water storage tank 32 for wafer cleaning supported by a pedestal is configured so that pure water supplied from a pure water supply source (not shown) is overflowed, and thus the chemical storage tank sink (10) As it is supplied to the bottom surface is also mixed with the chemical and the city water supplied from the buffer tank 26 is configured to be discharged to the outside through the waste liquid outlet (12).

The conventional wet etching apparatus configured as described above is 120 by a heating apparatus. 150 Maintaining the temperature and the wet etching process is performed by removing the unnecessary part on the wafer by the operation of the robot inside the chemical storage tank (20, 22) containing chemicals having corrosive, toxic properties and the like.

In this case, in order to maintain the purity of the chemical used as an etchant, the chemical supply source supplies a certain amount of chemical to the chemical storage tanks 20 and 22. Therefore, the overflowed chemicals in the chemical reservoirs 20 and 22 are supplied to the buffer tank 26 through the Teflon tube 24.

The chemical supplied to the buffer tank 26 is 120 150 It maintains accuracy and has corrosive and toxic properties.

Therefore, when the chemical is discharged to the bottom of the chemical storage sink 10 as it is, the corrosive components included in the chemical and each of the welded corners of the chemical storage sink 20 and 22 may be oxidized and split according to chemical reaction. .

In addition, the chemical reservoir sink 10 may be deformed by the temperature of the chemical, and the temperature inside the chemical apparatus may be increased.

Thus, the city water at room temperature supplied from the city water supply source 28 is supplied to the buffer tank 26 to lower the temperature of the chemical and dilute the chemical.

At this time, the city water supply source 28 further supplies the city water through the city water outlet 29 formed in the upper portion of the pipe line installed between the bottom of the chemical storage sink 10 and the base case 16 to further dilute the chemical.

The temperature is lowered by the city water, and the diluted chemical is discharged from the buffer tank 26 and discharged to the outside through the waste liquid discharge port 12 formed at the bottom of the chemical storage sink 10.

In addition, when the robot grasps the wafer and loads the wafer into the chemical storage tanks 20 and 22, the arm of the robot comes into contact with the chemical contained in the chemical storage tanks 20 and 22, thus bringing the wafer into the chemical storage tanks 20 and 22. After loading, the water must be cleaned using pure water contained in the pure water storage tank 30 for arm cleaning.

The pure water storage tank 30 for washing the arm is overflowed by a predetermined amount as pure water is continuously supplied from a pure water supply source, and flows through the bottom of the chemical storage sink sink 10 to be discharged to the outside through the waste liquid outlet 12.

At this time, the pure water is mixed with the chemical and city water passed through the buffer tank 26 and the city water discharged through the city water outlet (29).

In addition, the wafer in which the wet etching process is performed in the chemical storage tanks 20 and 22 is moved to the pure water storage tank 32 for cleaning the wafer by the operation of the robot and cleaned using pure water to remove the chemical adsorbed on the wafer. do.

The pure water storage tank 32 for washing the wafer is also overflowed due to the continuous supply of pure water from the pure water supply source and flows to the bottom of the chemical storage sink 10.

The pure water supplied to the bottom of the chemical storage sink 10 is mixed with the chemical and city water discharged through the buffer tank 26 and the city water discharged through the city water discharge port 29 and externally discharged through the waste liquid discharge port 12. Is released.

However, the overflowed pure water from the pure water storage tank for arm cleaning and the pure water storage tank for wafer cleaning is mixed at the bottom of the city water and chemical storage sinks discharged from the chemical and city water outlets discharged through the buffer tank and discharged together through the waste liquid discharge port. Since there is a problem in that the pure water can not be recovered and reused and disposed of.

In addition, chemically evaporated and chemically evaporated chemicals mixed with pure water and city water come into contact with each corner of the chemical reservoir sink during the continuous process, resulting in corrosion and cracking of each corner of the chemical reservoir sink. There was a problem.

An object of the present invention is to provide a wet etching apparatus for manufacturing a semiconductor that can recover and recycle pure water used in the wet etching process.

Another object of the present invention is to provide a wet etching apparatus for manufacturing a semiconductor to prevent the corners of the chemical storage sink sink from splitting as each corner portion of the welded chemical storage sink sinks in chemical contact with the chemical component.

The wet etching apparatus for manufacturing a semiconductor according to the present invention for achieving the above object is manufactured integrally and has a specific space and is spaced apart from the bottom of a chemical storage tank sink having a plurality of discharge outlets having a protruding jaw at a bottom specific position. A base case having a plurality of pure discharge ports for discharging the pure water discharged by overflow in a pure water storage tank and a pure water storage tank for wafer cleaning is installed, and a chemical storage tank is installed in the inner space of the base case so that the chemicals discharged from the chemical storage tank are Characterized in that it is configured to be discharged to the outside through the buffer tank located outside the chemical storage tank sink.

The chemical storage sink is preferably molded integrally.

City water is preferably mixed with the chemical discharged and supplied into the buffer tank.

The pure water storage tank for arm cleaning includes a first pure water storage tank formed by dividing an inner space formed by an arm partition and an inner wall of the chemical storage tank sink, and a second storage tank formed inside the first storage tank, which is overflowed in the second storage tank. Preferably, pure water is configured to be supplied to the first reservoir.

Preferably, a pipe having an end portion connected to the inner space of the base case is connected to a through hole formed in the upper sidewall of the first reservoir.

A wafer partition is formed between the wafer cleaning pure water storage tank and the chemical storage tank, and the pure water that is overflowed in the pure water storage tank is overflowed again to supply the bottom surface of the chemical storage sink sink.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a cross-sectional view showing an embodiment of a wet etching apparatus for manufacturing a semiconductor according to the present invention.

Referring to FIG. 2, a box shaped chemical storage sink 40 having a predetermined space is formed.

A recovery outlet 42 having a protruding jaw is formed at the bottom of the chemical storage sink sink 40.

In addition, the chemical storage tank sink 40 is spaced apart from the bottom of the chemical storage sink 40 by a plurality of base case pedestal 44, the base case 46 having a specific space is installed, the base case ( 46) A plurality of pure water discharge ports 47 are formed on the bottom surface.

In addition, the base case 46 is spaced apart from the base case 46 by a plurality of chemical storage base pedestal 48, the chemical storage tank (50, 52) having a specific space is installed 120 by the heating device 150 Maintaining the temperature of the degree, the etching process using the chemical having the properties of corrosive, toxic and so on.

The chemical contained in the chemical storage tanks (50, 52) should maintain the purity, so that the chemical is continuously supplied from the chemical supply source (not shown) to the chemical storage tanks (50, 52) so that the amount of the chemicals in the chemical storage tank exceeds a certain amount. The reservoirs 50 and 52 are configured to be discharged through the through holes formed in the upper sidewalls.

Chemicals discharged from the chemical reservoirs 50 and 52 are supplied to the buffer tank 56 located outside the chemical apparatus through the chemical piping line 54, and the chemical supplied to the buffer tank 56 is external to the wet etching apparatus for semiconductor manufacturing. It is diluted with the city water supplied from the city water supply source 58 installed in the is discharged to the outside through the discharge pipe (57).

In addition, an arm partition 60 having a specific height is configured on one side of the chemical storage tanks 50 and 52, and the inner space formed by the inner partition formed by the arm partition 60 and the chemical storage sink sink 40 is divided into arm washes. A pure water storage outer tank 62 is provided, and a through hole is formed in an upper sidewall of the pure water storage outer tank 62 for arm cleaning, and the through hole is connected to the pure pipe 64.

The end of the pure pipe 64 is disposed to face the space between the chemical storage tank (50, 52) and the base case 46, the inside of the pure water storage tank 62 for arm cleaning pure storage tank pedestal for arm cleaning ( 64, the pure water storage tank 68 for supporting the arm is constructed so that the pure water supplied from the pure water supply source (not shown) is overflowed so as to be supplied to the pure water storage tank 62 for cleaning the arm. It is.

Therefore, when the amount of pure water accumulated in the pure water storage tank 62 for cleaning the arm reaches a predetermined amount or more, it is supplied to the inner space of the base case 46 through the pure pipe 64.

In addition, on the other side of the chemical storage tanks 50 and 52, the pure water storage tank 72 for wafer cleaning is provided on the other side of the chemical storage tank sink 70 by being spaced apart from the bottom surface of the chemical storage tank sink 40. As the wafer partition 74 is formed between the reservoirs 50 and 52 and the pure water storage tank 72 for cleaning the wafer, as the pure water supplied from the pure water source (not shown) overflows, the inner sidewall of the chemical reservoir sink 40 Accumulated in the space formed between the wafer partition 74 and the predetermined amount or more, the wafer partition 74 is overflowed into the internal space formed by the protruding jaw of the recovery outlet 42 at the bottom of the chemical storage sink 40. It is configured to accumulate.

The pure water accumulated by the protruding jaw is overflowed so as to be discharged through the recovery outlet 42 when it exceeds a predetermined amount.

The wet etching apparatus of the present invention having the above structure is 120 by a heating apparatus. 150 The wet etching process is performed in the state where the wafer is contained by the operation of the robot in the chemical storage tanks 50 and 52 containing the chemicals to maintain the temperature.

At this time, the chemical is adsorbed on the wafer or 120 150 Chemicals that maintain the temperature of the degree is evaporated to lower the purity of the chemicals, so the chemical source supplies a certain amount of chemicals to the chemical reservoirs (50, 52).

Therefore, the chemical contained in the chemical storage tanks 50 and 52 is overflowed and supplied to the buffer tank 56 located outside the etching apparatus through the chemical piping line 54.

The chemical supplied to the buffer tank 56 is mixed with the lower temperature city water supplied from the city water supply source 58 and discharged to the outside through the discharge pipe 57.

The chemical is mixed with the city water 150 The temperature of the chemical that maintains the temperature is lowered, and the chemical components are diluted.

Then, when the robot transfers the wafer to the chemical storage tanks 50 and 52, the robot's arm moves to the pure water storage tank 68 for cleaning the arm so as to clean the chemical adsorbed to the robot's arm.

At this time, since the pure water is supplied from a pure water supply source (not shown) to the inside of the pure water storage tank 68 for cleaning the arm, if a predetermined amount or more, the pure pipe through the through hole formed in the side wall of the pure water storage tank 62 for cleaning the arm. 64 is supplied.

The pure water supplied to the pure pipe 64 is supplied to the inner space of the base case 46 and is supplied to the bottom of the chemical storage sink 40 through the pure water outlet 47 formed at the bottom of the base case 46.

The pure water supplied to the bottom of the chemical reservoir sink 40 is accumulated in the internal space of the chemical reservoir sink 40 formed by the protruding jaw of the projected discharge outlet 42, and when over a predetermined amount, the pure water is blown out and the outlet for recovery ( Through 42).

Then, the wafer, which has been etched in the chemical storage tanks 50 and 52, is transferred to the pure water storage tank 72 for cleaning the wafer by the operation of the robot to remove chemicals adsorbed on the wafer.

At this time, the pure water storage tank 72 for the wafer cleaning is overflowed when a predetermined amount or more due to the constant supply of pure water supplied from a pure water supply source (not shown). The overflowed pure water accumulates in the inner space formed by the sidewalls of the wafer partition 74 and the chemical storage tanks 50 and 52.

When the accumulated pure water becomes more than a predetermined amount, the wafer partition 74 is overflowed and accumulated in the space formed by the projection jaw formed in the recovery outlet 42 at the bottom of the chemical storage sink 40.

The accumulated pure water again becomes a certain amount or more, and overflows on the protruding jaw and is discharged to the outside through the discharge outlet 42.

Therefore, the overflowed chemical from the chemical reservoir is supplied to the buffer tank configured outside the etching apparatus, and the pure water for cleaning the arm and the pure water for cleaning the wafer are discharged through the recovery outlet formed in the face of the chemical reservoir sink. The chemicals are not mixed, and the released pure water is recovered and reused.

In addition, since each corner portion of the chemical reservoir sink is manufactured integrally by molding, and chemicals are discharged to the outside of the etching apparatus, chemical components do not come into contact with each corner of the chemical reservoir, and pure water is accumulated at a certain amount on the bottom of the chemical reservoir sink. Therefore, since the steam generated in the chemical storage tank does not come into contact with each corner of the chemical storage tank, there is an effect that it is possible to prevent the split of each corner of the chemical storage sink.

Although the present invention has been described in detail only with respect to the described embodiments, it will be apparent to those skilled in the art that various modifications and changes are possible within the technical scope of the present invention, and such modifications and modifications belong to the appended claims.

Claims (6)

The pure water discharged from the overflow of the arm cleaning pure water storage tank and the wafer cleaning pure water storage tank separated from the bottom of the chemical storage tank sink having a specific space and having a specific space and having a plurality of recovery outlets having a protruding jaw at a specific bottom surface. The base case is formed with a plurality of pure discharge outlet is installed, the chemical storage tank is installed in the inner space of the base case is configured to be discharged to the outside through the buffer tank located in the chemical storage tank sink outside the chemical storage tank Wet etching apparatus for manufacturing a semiconductor. The wet etching apparatus of claim 1, wherein the chemical storage sink is integrally molded. The wet etching apparatus of claim 1, wherein the city water is mixed with chemicals supplied and discharged into the buffer tank. According to claim 1, The pure water storage tank for arm cleaning is a first pure water storage tank formed by dividing the inner space formed by the arm partition and the inner wall of the chemical storage tank sink, and the second storage tank is configured inside the first storage tank, the second The wet etching apparatus for manufacturing a semiconductor according to claim 1, wherein the pure water overflowed from the storage tank is supplied to the first storage tank. The wet etching apparatus of claim 4, wherein a pipe having an end portion connected to an inner space of the base case is connected to a through hole formed in an upper sidewall of the first reservoir. The method of claim 1, wherein a wafer partition is formed between the pure water tank for cleaning the wafer and the chemical storage tank, and the pure water overflowed in the pure water storage tank is overflowed again to supply the bottom surface of the chemical storage sink. Wet etching apparatus for producing a semiconductor.