KR100200492B1 - Vacuum pumping apparatus of sputter - Google Patents
Vacuum pumping apparatus of sputter Download PDFInfo
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- KR100200492B1 KR100200492B1 KR1019960020843A KR19960020843A KR100200492B1 KR 100200492 B1 KR100200492 B1 KR 100200492B1 KR 1019960020843 A KR1019960020843 A KR 1019960020843A KR 19960020843 A KR19960020843 A KR 19960020843A KR 100200492 B1 KR100200492 B1 KR 100200492B1
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- vacuum
- pumping
- load lock
- reaction chamber
- chamber
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- 238000005086 pumping Methods 0.000 title claims abstract description 41
- 238000004544 sputter deposition Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910000939 field's metal Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B90/00—Enabling technologies or technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02B90/20—Smart grids as enabling technology in buildings sector
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y04—INFORMATION OR COMMUNICATION TECHNOLOGIES HAVING AN IMPACT ON OTHER TECHNOLOGY AREAS
- Y04S—SYSTEMS INTEGRATING TECHNOLOGIES RELATED TO POWER NETWORK OPERATION, COMMUNICATION OR INFORMATION TECHNOLOGIES FOR IMPROVING THE ELECTRICAL POWER GENERATION, TRANSMISSION, DISTRIBUTION, MANAGEMENT OR USAGE, i.e. SMART GRIDS
- Y04S20/00—Management or operation of end-user stationary applications or the last stages of power distribution; Controlling, monitoring or operating thereof
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 스퍼터(Sputter)의 진공 펌핑 장치에 관한 것으로서, 반응실과 로드락 실을 대기 상태에서 저 진공 상태로 러핑할 수 있는 진공 러핑 수단과, 상기 반응실을 고 진공으로 펌핑하는 수단과 분리하여, 별도로 로드락 실을 고 진공 상태로 되도록 펌핑하는 제1펌핑 수단과, 상기 반응실과 로드락 실이 웨이퍼 이송시 마다 동일 공간을 이룸에 따른 진공의 누설을 막을 수 있도록 고 진공 상태로 펌핑하는 제2펌핑 수단과 상기 수단들의 작동에 따라 반응실 및 로드락 실과 연통된 진공 라인을 개폐시키는 다수의 밸브 들을 구비하는 것을 특징으로 한다.The present invention relates to a vacuum pumping apparatus for a sputtering machine, which comprises vacuum roughing means capable of lapping a reaction chamber and a load lock chamber from a standby state to a low vacuum state, and separating the reaction chamber from a means for pumping the reaction chamber to a high vacuum A first pumping means for separately pumping the load lock chamber to a high vacuum state and a second pumping means for pumping the reaction chamber and the load lock chamber in a high vacuum state so as to prevent leakage of the vacuum due to the same space, 2 pumping means and a plurality of valves for opening and closing a vacuum line communicated with the reaction chamber and the load lock chamber according to the operation of the means.
따라서, 스퍼터링 공정에 필요한 진공도를 더욱 향상시킬 수 있으므로 제조 수율의 향상에 기여하는 바가 크다.Therefore, the degree of vacuum necessary for the sputtering process can be further improved, which contributes greatly to the improvement of the production yield.
Description
제1도는 종래의 실시예에 따른 스퍼터의 진공 펌핑 장치를 개략적으로 나타낸 구성도.FIG. 1 is a schematic view showing a vacuum pumping apparatus of a sputtering apparatus according to a conventional embodiment; FIG.
제2도는 본 발명의 실시예에 따른 스퍼터의 진공 펌핑 장치를 개략적으로 나타낸 구성도.FIG. 2 is a schematic view showing a vacuum pumping apparatus of a sputtering apparatus according to an embodiment of the present invention; FIG.
* 도면의 주요부분에 대한 부호의 설명DESCRIPTION OF THE REFERENCE NUMERALS
10 : 반응실 20 : 로드락 실10: reaction chamber 20: load lock chamber
30 : 크라이오 펌프 40 : 드라이 펌프30: Cryo pump 40: Dry pump
50 : 제1펌핑 수단 52, 62 : 터보 펌프50: first pumping means 52, 62: turbo pump
54, 64 : 기계 펌프 60 : 제2펌핑 수단54, 64: mechanical pump 60: second pumping means
본 발명은 스퍼터(Sputter)의 진공 펌핑 장치에 관한 것으로서, 보다 상세하게는 반도체의 제조 공정에 사용되는 스퍼터장비의 진공도를 향상시킬 수 있는 스퍼터(Sputter)의 진공 펌핑 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum pumping apparatus of a sputtering apparatus, and more particularly, to a vacuum pumping apparatus of a sputtering apparatus capable of improving the degree of vacuum of a sputtering apparatus used in a semiconductor manufacturing process.
일반적으로 반도체 제조용 스퍼터(Sputter)는 알루미늄(Al)이나 티타늄 (Ti)등의 금속막을 반도체 웨이퍼 위에 적층시켜 전극이나 배선을 형성시키는 장비이다.In general, a sputter for semiconductor manufacturing is a device for forming an electrode or wiring by laminating a metal film such as aluminum (Al) or titanium (Ti) on a semiconductor wafer.
즉, 상기 스퍼터(Sputter)는, 예를 들어 아르곤(Ar)가스 등의 불활성 기체가 존재하는 반응실 내에 고 전압을 인가하면, 강한 전기장 속에서 음(-)으로 대전된 금속 타겟으로부터 Al 등의 금속 원자가 튀어나와 웨이퍼 상에 얇은 막으로 적층시키는 것이다.That is, when a high voltage is applied to a reaction chamber in which an inert gas such as argon (Ar) gas is present, the sputter is sputtered from a metal target charged negative in a strong electric field Metal atoms protrude and laminate on the wafer with a thin film.
이때, 반응실의 내부 압력은 대략 5 × 10-7Torr 정도의 고 진공 상태를 유지하고 있어야 한다.At this time, the inner pressure of the reaction chamber should be maintained at a high vacuum of about 5 × 10 -7 Torr.
이러한 고 진공 상태를 유지하기 위한 종래의 장치는, 예를 들어 미국 베리언(Varian)사의 3180 모델 스퍼터 장비의 진공 펌핑 장치를 제1도에서 개략적으로 나타내고 있다.A conventional apparatus for maintaining such a high vacuum state is schematically shown in FIG. 1, for example, a vacuum pumping apparatus of a 3180 model sputtering apparatus of Varian, USA.
제1도를 참조하면, 종래의 장치는 반응실(1)과 로드락 실(Load Lock Chamber)(2) 내부를 동일한 크라이오 펌프(Cryo Pump)(3) 및 기계 펌프(4)의 작동에 따라 고,저의 진공 상태를 유지하게 된다. 이 때 상기 진공 상태는 다수의 연통된 진공 라인에 설치된 여러개의 밸브를 통하여 조절된다.Referring to FIG. 1, a conventional apparatus includes a reaction chamber 1 and a load lock chamber 2 inside the same cryo pump 3 and a mechanical pump 4, So that the vacuum state is maintained. Wherein the vacuum is regulated through a plurality of valves installed in a plurality of communicating vacuum lines.
즉, 반응실(1)은 기계펌프(4)의 작동에 따라 디프렌셜 펌프 아웃 밸브(Differential Pump Out Valve)(V7)를 통하여 저 진공 상태를 유지하도록 러핑(roughing)되고, 크라이오 펌프(3)의 작동에 따라 고 진공 밸브(V1)를 통하여 스퍼터링(Sputtering)작업에 적합한 고 진공 상태를 유지한다.That is, the reaction chamber 1 is roughened to maintain a low vacuum state through a differential pump out valve (V7) according to the operation of the mechanical pump 4, 3), a high vacuum state suitable for a sputtering operation is maintained through the high vacuum valve V1.
한편, 로드락 실(Load Lock Chamber)(2)은 반응실(1) 내로 로드/언로드(Load/Unload)되는 웨이퍼의 공정 예비 환경을 조성시키기 위하여, 우선, 기계 펌프(4)의 작동에 따라 대기 상태에서 100mm Torr 이하의 저 진공 상태로 러핑(roughing)시킬 때, 로드락 아이솔레이션 밸브(Load Lock Isolation Valve(V2) 및 로드락 러프 밸브(Load Lock Rough Valve(V3)는 개방된다.On the other hand, in order to create a process preliminary environment for a wafer to be loaded / unloaded into the reaction chamber 1, the load lock chamber 2 is first subjected to the operation of the mechanical pump 4 Load Lock Isolation Valve (V2) and Load Lock Rough Valve (V3) are open when roughing under low vacuum of 100mm Torr or less in the standby state.
이 후, 상기 로드락 실(2)을 고 진공 상태로 유지하려면, 상기 로드락 러프 밸브(V3)를 폐쇄하는 반면, 로드락 아이솔레이션 밸브(V2) 및 로드락 고 진공 밸브(V4)를 개방하여 크라이오 펌프(3)의 펌핑력이 작용되게 한다.Thereafter, in order to keep the load lock chamber 2 in a high vacuum state, the load lock isolation valve V2 and the load lock high vacuum valve V4 are opened while the load lock isolation valve V3 is closed So that the pumping force of the cryo pump 3 is applied.
그러나, 로드락 방식으로 공정을 진행을 할 때 웨이퍼가 반응실(1)로 로드/언로드되려면 반드시 로드락 실(2)을 거쳐야 하므로, 반응실(1)의 진공 상태는 공정이 진행될수록 계속 열화된다.However, in order to load / unload the wafer into / from the reaction chamber 1 when the process is performed in the load-lock system, the vacuum state of the reaction chamber 1 must be continuously deteriorated as the process progresses do.
이렇게 반응실(1)의 진공 상태가 열화되는 원인과 이에 수반되는 문제점을 지적하면 다음과 같다.The causes of the deterioration of the vacuum state of the reaction chamber 1 and the accompanying problems are as follows.
첫째로, 반응실(1)과 로드락 실(2)이 동일한 크라이오 펌프(3)에 의하여 고 진공 상태를 유지하므로 상시 로드락 실(2)내에 존재하던 상당량의 공기 분자 들이 로드락 고 진공 밸브(V4)의 개방에 따라 도면에 지시된 화살표 방향으로 반응실(1) 내부로 역류된다. 이는 진공을 누설시키는 작용을 하므로 웨이퍼 상에 양호한 막질을 침적시키지 못하는 결과를 초래한다.First, since the reaction chamber 1 and the load lock chamber 2 are kept in a high vacuum state by the same cryo pump 3, a considerable amount of air molecules existing in the load lock chamber 2 always travel in the load lock and vacuum And flows back into the inside of the reaction chamber 1 in the direction of the arrow shown in the drawing according to the opening of the valve V4. This causes leakage of the vacuum, which results in failure to deposit a good film quality on the wafer.
둘째로, 반응실(1)과 로드락 실(2)을 기계 펌프(4)에 의해 저 진공 상태로 러핑시킬 때, 디프렌셜 펌프 아웃 밸브(Differential Pump Out Valve)(V7)와 로드락 디프렌셜 펌프 아웃 밸브(Load Lock Differential Pump Out Valve)(V8)를 통하여, 도면의 화살표 방향과 같이, 펌핑되는 공기가 역류되어 러핑 진공이 조금씩 누설된다. 이는 웨이퍼가 이송될 때마다 반응실 내의 이송 플레이트(도시 생략)가 회전하게 되어, 반응실(1)과 로드락 실(2)이 하나의 챔버로 되기 때문이다. 첫째 문제점과 마찬가지로, 반응실(1)의 진공도에 나쁜 영향을 미쳐 금속 막질의 침적 불량을 초래하게 된다.Secondly, when the reaction chamber 1 and the load lock chamber 2 are routed to a low vacuum state by the mechanical pump 4, a differential pump out valve (V7) and a load lock chamber The pumping air is backwardly flowed through the load lock differential pump out valve (V8) as shown by the arrow in the figure, and the roughing vacuum leaks little by little. This is because the transfer plate (not shown) in the reaction chamber rotates each time the wafer is transferred, and the reaction chamber 1 and the load lock chamber 2 become one chamber. Like the first problem, adversely affects the degree of vacuum of the reaction chamber 1, resulting in poor deposition of the metal film.
따라서, 본 발명은 상술한 여러 문제점을 해소하기 위하여 창작된 것으로서, 본 발명의 목적은 반응실과 로드락 실의 진공 펌핑부를 완전히 격리시킴으로써 진공도를 향상시킬 수 있는 스퍼터(Sputter)의 진공 펌핑 장치를 제공하는 데 있다.SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a vacuum pumping device for a sputter which can improve the degree of vacuum by completely isolating the vacuum pumping part of the reaction chamber and the load lock chamber I have to.
이와 같은 목적을 당설하기 위한 본 발명에 따른 스퍼터(Sputter)의 진공 펌핑 장치는, 반응실과 로드락 실을 대기 상태에서 저 진공 상태로 러핑할 수 있는 진공 러핑 수단과,A vacuum pumping apparatus of a sputtering apparatus according to the present invention for achieving the above object is provided with a vacuum roughing means capable of lapping a reaction chamber and a load lock chamber from a standby state to a low vacuum state,
상기 반응실을 고 진공으로 펌핑하는 수단과 분리하여, 별도로 로드락 실을 고 진공 상태로 되도록 펌핑하는 제1펌핑 수단과,First pumping means separately from means for pumping the reaction chamber to a high vacuum, separately pumping the load lock chamber to a high vacuum state,
상기 반응실과 로드락 실이 웨이퍼 이송시 마다 동일 공간을 이룸에 따른 진공의 누설을 막을 수 있도록 고 진공 상태로 펌핑하는 제2펌핑 수단과,A second pumping means for pumping the reaction chamber and the load lock chamber in a high vacuum state so as to prevent leakage of the vacuum due to the same space each time the wafer is transferred;
상기 수단 들의 작동에 따라 반응실 및 로드락 실과 연통된 진공 라인 들 을 개폐시키는 다수의 밸브 들을 구비하는 것을 특징으로 한다.And a plurality of valves for opening and closing the vacuum lines communicated with the reaction chamber and the load lock chamber according to the operation of the means.
이하, 본 발명의 바람직한 실시예를 첨부된 도면에 의하여 더욱 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the accompanying drawings.
제2도는 본 발명의 실시예에 따른 스파터의 진공 펌핑 장치를 개략적으로 나타낸 구성도이다.FIG. 2 is a schematic view showing a vacuum pumping apparatus of a sputtering apparatus according to an embodiment of the present invention.
상기 도면에서, 본 발명은 반응실(10)과 로드락 실 (Load Lock Chamber)(20) 내부를 서로 다른 진공 라인을 통하여 각 각 별도의 펌핑 수단에 의하여 고,저 진공 상태를 유지하도록 구비되고, 상기 진공 상태는 다수의 밸브 들에 의하여 조절된다.In the drawings, the present invention is configured to maintain a high and low vacuum state in the reaction chamber 10 and the load lock chamber 20 through different vacuum lines by respective separate pumping means , The vacuum state is regulated by a plurality of valves.
구체적으로 살펴보면, 반응실(10)은 크라이오 펌프(Cryo Pump)(30)의 작동에 따라 고 진공 밸브(V1)를 개방시켜 5 × 10-7Torr 정도의 고 진공 상태를 유지하게 된다.Specifically, the reaction chamber 10 opens the high vacuum valve V1 according to the operation of the cryo pump 30 to maintain a high vacuum of about 5 × 10 -7 Torr.
반면에 로드락 실(20)은 별도의 진공 라인 상에 제1펌핑 수단(50)을 부가 설치하고, 상기 제1펌핑 수단(50)의 작동에 따라 로드락 러프 밸브(Load Lock Rough Valve)(V3)를 폐쇄시킴과 동시에 로드락 아이솔레이션 밸브(Load Lock Isolation Valve)(V2) 및 로드락 고 진공 밸브(V4)를 개방시킴으로써 고 진공 상태를 유지할 수 있다. 여기서, 상기 제1펌핑 수단 (50)은 터보 펌프(Turbo Pump)(52) 및 기계 펌프(54)를 포함한다.On the other hand, the load lock chamber 20 is provided with a first pumping means 50 on a separate vacuum line, and a load lock valve (Load Lock Rough Valve) V3 can be closed and the high vacuum can be maintained by opening the load lock isolation valve V2 and the load lock high vacuum valve V4. Here, the first pumping means 50 includes a turbo pump 52 and a mechanical pump 54.
물론, 로드락 실(20)을 대기압 상태에서 대략 10-3Torr 정도의 저진공 상태를 유지시키는 러핑(Roughing)시에는, 로드락 고 진공 밸브(V4)를 폐쇄시키는 반면, 로드락 아이솔레이션 밸브(Lpad Lock Isolation Valve)(V2) 및 로드락 러프 밸브(Load Lock Rough Valve)(V3)는 개방시켜 드라이 펌프(Dry Pump)(40)를 작동시키면 된다.Of course, at the time of roughing maintaining the vacuum chamber 20 at a low vacuum state of about 10 -3 Torr at atmospheric pressure, the load lock high vacuum valve V4 is closed while the load lock isolation valve The Lump Lock Isolation Valve (V2) and the Load Lock Rough Valve (V3) may be opened to operate the dry pump (40).
더욱이, 반응실(10)의 디프렌셜 라인에는 제2펌핑 수단(60)이 별도로 설치되고, 디프렌셜 펌프 아웃 밸브(Differential Pump Out Valve)(V7)와 로드락 디프렌셜 펌프 아웃 밸브(Load Lock Differential Pump Out Valve)(V8)가 구비된다. 여기서, 상기 제2펌핑 수단(60)은 터보 펌프(Turbo Pump)(62)및 기계 펌프(64)를 포함한다.The second pumping means 60 is installed separately in the differential line of the reaction chamber 10 and the differential pump out valve V7 and the load lock differential pump out valve Load Lock Differential Pump Out Valve (V8). Here, the second pumping means 60 includes a turbo pump 62 and a mechanical pump 64.
이와 같이 본 발명의 장치는, 반응실(10)과 로드락 실(20)의 펌핑부를 완전히 격리시킴으로써, 종래와 같이 크라이오 펌프를 통하여 반응실 내로 공기 분자가 역류되는 것을 방지할 수 있다.As described above, by completely isolating the reaction chamber 10 from the pumping portion of the load lock chamber 20, the apparatus of the present invention can prevent the air molecules from flowing back into the reaction chamber through the cryo pump as in the conventional art.
또한, 디프렌셜 라인과 러핑 라인을 분리시킴으로써 상기 제2펌핑 수단(60)을 작동시키면, 이미 지적한 바와 같이, 웨이퍼가 이동될 때 반응실(10)과 로드락 실(20)이 하나의 챔버를 이루게 됨에 따른 미세한 러핑 진공의 누설을 방지할 수 있다.When the second pumping means 60 is operated by separating the differential line and the roughing line, the reaction chamber 10 and the load-lock chamber 20 are separated from each other by one chamber The leakage of the roughing vacuum can be prevented.
따라서, 상술한 본 발명에 의하면, 스퍼터링 공정에 필요한 진공도를 더욱 향상시킬 수 있으므로 제조 수율의 향상에 기여하는 바가 크다.Therefore, according to the present invention described above, since the degree of vacuum necessary for the sputtering process can be further improved, it contributes greatly to the improvement of the production yield.
Claims (2)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020843A KR100200492B1 (en) | 1996-06-11 | 1996-06-11 | Vacuum pumping apparatus of sputter |
| TW090200950U TW556955U (en) | 1996-06-11 | 1996-07-30 | Vacuum pumping system for a sputtering device |
| JP8331185A JPH108250A (en) | 1996-06-11 | 1996-12-11 | Sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960020843A KR100200492B1 (en) | 1996-06-11 | 1996-06-11 | Vacuum pumping apparatus of sputter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR980005356A KR980005356A (en) | 1998-03-30 |
| KR100200492B1 true KR100200492B1 (en) | 1999-06-15 |
Family
ID=19461477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960020843A KR100200492B1 (en) | 1996-06-11 | 1996-06-11 | Vacuum pumping apparatus of sputter |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH108250A (en) |
| KR (1) | KR100200492B1 (en) |
| TW (1) | TW556955U (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4781105B2 (en) * | 2005-12-28 | 2011-09-28 | 株式会社昭和真空 | Sputtering apparatus and method |
-
1996
- 1996-06-11 KR KR1019960020843A patent/KR100200492B1/en not_active IP Right Cessation
- 1996-07-30 TW TW090200950U patent/TW556955U/en not_active IP Right Cessation
- 1996-12-11 JP JP8331185A patent/JPH108250A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPH108250A (en) | 1998-01-13 |
| TW556955U (en) | 2003-10-01 |
| KR980005356A (en) | 1998-03-30 |
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