KR100190637B1 - Dual band high frequency power amplifier - Google Patents

Dual band high frequency power amplifier Download PDF

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Publication number
KR100190637B1
KR100190637B1 KR1019960057268A KR19960057268A KR100190637B1 KR 100190637 B1 KR100190637 B1 KR 100190637B1 KR 1019960057268 A KR1019960057268 A KR 1019960057268A KR 19960057268 A KR19960057268 A KR 19960057268A KR 100190637 B1 KR100190637 B1 KR 100190637B1
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South Korea
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power amplifier
frequency
communication
high frequency
matching circuit
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KR1019960057268A
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Korean (ko)
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KR19980038371A (en
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임병선
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이형도
삼성전기주식회사
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/171—A filter circuit coupled to the output of an amplifier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

본 발명은 두개지의 통신주파수를 처리하는 통신시스템에서 듀얼밴드 고주파전력증폭기에 관한 것이다.The present invention relates to a dual band high frequency power amplifier in a communication system processing two communication frequencies.

본 발명은 두개지의 통신주파수를 처리하는 통신시스템에서 듀얼밴드(Dual-Band)를 위한 고주파 전력증폭모듈(Power Amplifier Module:PAM)을 다층기판을 이용하여 하나의 모듈로 제작함으로써, 전력증폭기의 사이즈를 획기적으로 축소할 수 있는 것이다.The present invention is to produce a high-frequency power amplifier module (PAM) for a dual-band (Dual-Band) in a single module using a multi-layer substrate in a communication system processing two communication frequencies, the size of the power amplifier It is possible to reduce significantly.

Description

듀얼밴드 고주파전력증폭기Dual Band High Frequency Power Amplifier

본 발명은 주파수대역이 다른 2개의 통신을 처리하는 통신시스템에 적용되는 듀얼밴드 고주파전력증폭기에 관한 것으로, 특히 두개지의 통신주파수를 처리하는 통신시스템에서 듀얼밴드(Dual-Band)를 위한 고주파 전력증폭모듈(Power Amplifier Module : PAM)을 다층기판을 이용하여 하나의 모듈(Module)로 제작함으로써, 전력증폭기의 사이즈를 획기적으로 축소할 수 있는 듀얼밴드 고주파전력증폭기에 관한 것이다.The present invention relates to a dual-band high-frequency power amplifier that is applied to a communication system that processes two communications having different frequency bands, and particularly, a high-frequency power amplifier for dual-band in a communication system that processes two communication frequencies. The present invention relates to a dual-band high-frequency power amplifier that can dramatically reduce the size of a power amplifier by manufacturing a power amplifier module (PAM) as a single module using a multilayer board.

일반적으로, 최근에 이동통신시스템에 있어서 주파수대역이 다른 두가지의 통신을 동시에 서비스하고자하는 시스템, 예를들어, 이동통신시스템에서 1.7㎓ 대역의 PCS 방식과, 800㎒ 대역의 CDMA방식, 또는 1.8~1.9㎓ 대역의 DECT방식과 900㎒ 대역의 GSM방식중에서 2가지 이상을 통신을 제공하는 시스템등이 등장하고 있다.In general, recently, in a mobile communication system, a system for simultaneously serving two types of communication having different frequency bands, for example, a 1.7 GHz PCS system, a 800 MHz CDMA system, or 1.8 ~ A system that provides two or more types of communication among the DECT method of the 1.9 GHz band and the GSM method of the 900 MHz band has appeared.

이와같은 주파수대역이 다른 두가지의 통신을 제공하는 종래의 송신시스템에서는 제1도에 도시한 바와같으며, 제1도를 참조하면, 종래의 전력증폭기(Power Amplifier Module:PAM)에는 두개의 전력증폭모듈(10, 20)을 내장하고 있으며, 상기 하나의 전력증폭모듈(10)은 고주파대의 통신을 위한 전력증폭모듈이며, 다른 하나의 전력증폭모듈(20)은 저주파대의 통신을 위한 전력증폭모듈이다.In a conventional transmission system that provides two types of communication with different frequency bands as shown in FIG. 1, referring to FIG. 1, a conventional power amplifier module (PAM) has two power amplifiers. Modules 10 and 20 are built in, and one power amplification module 10 is a power amplification module for high frequency communication, and the other power amplification module 20 is a power amplification module for low frequency communication. .

상기 전력증폭모듈(10, 20)에서는 각각 3단으로 전력을 증폭하고 있으며, 상기 각 증폭기 사이에는 정합회로부(11, 13, 15, 17, 21, 23, 25, 27)를 구성하여, 해당통신대역에서 신호손실을 최대한으로 줄이면서 신호를 전후단으로 매칭시키고 있으며, 상기 전력증폭모듈(10, 20)내부는 GaAs MESFET 또는 FET로 구성되는 다수의 전력증폭트랜지스터(Q11, Q13, Q15, Q21, Q23, Q25)와, 상기 전력증폭트랜지스터 사이에는 다수개의 정합회로부(11, 13, 15, 17, 21, 23, 25, 27)로 구성되어 있다.The power amplification modules 10 and 20 amplify power in three stages, respectively, and match circuits 11, 13, 15, 17, 21, 23, 25, and 27 are formed between the respective amplifiers, and the corresponding communication is performed. The signal is matched to the front and rear ends while maximizing the signal loss in the band, and the power amplifier modules 10 and 20 inside the power amplifier transistors Q11, Q13, Q15, Q21, etc. Q23, Q25) and a plurality of matching circuit sections 11, 13, 15, 17, 21, 23, 25, and 27 between the power amplifier transistors.

이와같은 종래기술은 제1도에 도시한 바와같이 전력증폭모듈 2개를 내장하여 2개의 통신시스템을 서비스하는 것을 전력증폭트랜지스터를 별도로 사용하면서 발생되는 전체적인 가격상승과, 회로의 구현시 전체사이즈가 매우 커지게 되는 문제점이 있다.As shown in FIG. 1, the conventional technology includes two power amplification modules to service two communication systems, thereby increasing the overall price generated by using a separate power amplifier transistor and increasing the overall size of the circuit. There is a problem that becomes very large.

본 발명은 상기한 문제점을 해결하기 위해 안출한 것이다.The present invention has been made to solve the above problems.

따라서, 본 발명의 목적은 두개지의 통신주파수를 처리하는 통신시스템에서 듀얼밴드(Dual-Band)를 위한 고주파 전력증폭모듈(Power Amplifier Module:PAM)을 다층기판을 이용하여 하나의 모듈로 제작함으로써, 전력증폭기의 사이즈를 획기적으로 축소할 수 있는 듀얼밴드 고주파전력증폭기를 제공함에 있다.Accordingly, an object of the present invention is to manufacture a high-frequency power amplifier module (PAM) for dual-band (Dual Band) as a single module using a multi-layer substrate in a communication system processing two communication frequencies, It is to provide a dual band high frequency power amplifier that can significantly reduce the size of the power amplifier.

상기한 본 발명의 목적을 달성하기 위한 기술적인 수단으로써, 본 발명의 듀얼밴드 고주파전력증폭기는 2가지의 통신주파수를 충촉시키는 3단의 전력증폭트랜지스터; 상기 각 전력증폭트랜지스터 사이에 접속되어, 상기 2가지의 통신주파수를 손실없이 매칭시키는 정합회로부; 상기 전력증폭트랜지스터에 전원전압을 안정되게 제공하기 위한 코크코일 및 콘덴서; 상기 최후단 전력증폭트랜지스터로부터 두개의 통신주파수중에서 저역통신의 중심주파수(fC)를 제거하는 저역제거탱크부; 상기 저역 제거탱크부를 통한 고역통신주파신호를 후단으로 매칭시키는 정합회로부; 상기 정합회로부를 통한 신호중 고역통신주파수의 고조파성분을 제거하여 출력하는 고역고조파필터; 상기 최후단 전력증폭트랜지스터로부터 두개의 통신주파수중에서 고역통신의 중심주파수를 제거하는 고역제거탱크부; 상기 고역제거탱크부를 통한 저역통신주파신호를 후단으로 매칭시키는 정합회로부; 상기 정합회로부를 통한 신호중 저역통신주파수의 고조파성분을 제거하여 출력하는 저역고조파필터;를 구비함을 특징으로 한다.As a technical means for achieving the above object of the present invention, the dual band high-frequency power amplifier of the present invention is a three-stage power amplifier transistor for filling two communication frequencies; A matching circuit unit connected between each of the power amplifier transistors to match the two communication frequencies without loss; A coke coil and a condenser for stably providing a power supply voltage to the power amplifier transistor; A low pass removing tank unit for removing a center frequency (fC) of low pass communication among two communication frequencies from the last power amplifier transistor; A matching circuit unit for matching a high frequency communication frequency signal through the low pass removing tank unit to a rear stage; A harmonic filter for removing and outputting harmonic components of a high frequency communication frequency in the signal through the matching circuit unit; A high frequency removal tank unit for removing a center frequency of high frequency communication from two communication frequencies from the last power amplifier transistor; A matching circuit unit for matching a low frequency communication frequency signal through the high frequency elimination tank unit to a rear stage; And a low pass harmonic filter which removes and outputs harmonic components of a low pass communication frequency in the signal through the matching circuit unit.

제1도는 종래의 듀얼밴드 고주파전력증폭기에 대한 회로구성도이고,1 is a circuit diagram of a conventional dual-band high-frequency power amplifier,

제2도는 본 발명의 듀얼밴드 고주파전력증폭기에 대한 회로구성도이고,2 is a circuit diagram illustrating a dual band high frequency power amplifier of the present invention.

제3도는 본 발명에 따른 다층기판의 층간구성을 설명하기 위한 도면이다.3 is a view for explaining the interlayer structure of a multi-layer substrate according to the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

31, 32, 33, 42, 52 : 정합회로부 Q31, Q32, Q33 : 전력증폭트랜지스터31, 32, 33, 42, 52: matching circuit section Q31, Q32, Q33: power amplifier transistor

41 : 저역제거탱크부 51 : 고역제거탱크부41: low pass removal tank portion 51: high pass removal tank portion

43 : 고역고조파필터 53 : 저역고조파필터43: high frequency harmonic filter 53: low frequency harmonic filter

L1~L3 : 초크코일 C1~C3 : 콘덴서L1 ~ L3: Choke Coil C1 ~ C3: Condenser

fp : 고역중심주파수 fc : 저역중심주파수fp: high center frequency fc: low center frequency

이하, 본 발명에 따른 듀얼밴드 고주파전력증폭기를 첨부한 도면을 참조하여 설명한다.Hereinafter, a dual band high frequency power amplifier according to the present invention will be described with reference to the accompanying drawings.

제2도는 본 발명에 따른 듀얼밴드 고주파전력증폭기에 대한 회로구성도로서, 제2도를 참조하면, 본 발명의 구성은 2가지의 통신주파수를 충족시키는 3단의 전력증폭 트랜지스터(Q31, Q32, Q33)와, 상기 각 전력증폭트랜지스터(Q31, Q32, Q33) 사이에 접속되어, 상기 2가지의 통신주파수를 손실없이 매칭시키는 정합회로부(31, 33, 35)와, 상기 전력증폭트랜지스터(Q31, Q32, Q33)에 전원전압(Vdd1, Vdd2, Vdd)을 안정되게 제공하기 위한 코크코일(L1~L3) 및 콘덴서(C1~C3)와, 상기 최후단 전력증폭트랜지스터(Q33)로부터 두개의 통신주파수중에서 저역통신의 중심주파수(fC)를 제거하는 저역제거탱크부(41)와, 상기 저역제거탱크부(41)를 통한 고역통신주파신호를 후단으로 매칭시키는 정합회로부(42)와, 상기 정합회로부(42)를 통한 신호중 고역통신 주파수의 고조파성분을 제거하여 출력하는 고역고조파필터(43)와, 상기 최후단 전력증폭트랜지스터(Q33)로부터 두개의 통신주파수중에서 고역통신의 중심주파수를 제거하는 고역제거탱크부(51)와, 상기 고역제거탱크부(51)를 통한 저역통신주파신호를 후단으로 매칭시키는 정합회로부(52)와, 상기 정합회로부(52)를 통한 신호중 저역통신주파수의 고조파성분을 제거하여 출력하는 저역고조파필터(53)를 구성한다.FIG. 2 is a circuit diagram of a dual band high frequency power amplifier according to the present invention. Referring to FIG. 2, the configuration of the present invention includes three power amplifier transistors Q31, Q32, which satisfy two communication frequencies. Q33) and matching circuit sections 31, 33, and 35 connected between the respective power amplifier transistors Q31, Q32, and Q33 for lossless matching of the two communication frequencies, and the power amplifier transistors Q31, Two communication frequencies from the coke coils L1 to L3 and the capacitors C1 to C3 for stably providing the power supply voltages Vdd1, Vdd2, and Vdd to Q32 and Q33, and the last power amplifier transistor Q33. A low pass removing tank portion 41 for removing the center frequency fC of low pass communication, a matching circuit portion 42 for matching a high frequency communication frequency signal through the low pass removing tank portion 41 to the rear stage, and the matching circuit portion. Remove the harmonic components of the high frequency communication frequency from the signal through 42 A high-frequency harmonic filter 43, a high-frequency elimination tank unit 51 for removing a center frequency of high-frequency communication among two communication frequencies from the last power amplifier transistor Q33, and the high-frequency elimination tank unit 51 And a matching circuit unit 52 for matching the low frequency communication frequency signal through the lower stage, and a low frequency harmonic filter 53 for removing and outputting harmonic components of the low frequency communication frequency among the signals through the matching circuit unit 52.

상기 고역고조파필터(43)는 대역통과필터로 구성하고, 상기 저역고조파필터(53)는 저역통과필터로 구성한다.The high frequency harmonic filter 43 is configured as a band pass filter, and the low frequency harmonic filter 53 is configured as a low pass filter.

제3도는 본 발명에 따른 다층기판의 층간구성을 설명하기 위한 도면으로써, 제3도를 참조하면, 상기 고주파전력증폭기를 다층기판에 구성함에 있어서, 유전체1, 2, 3을 적층하며, 상기 유전체사이에, 접지부를 최하단층인 1층(1LA)과 3층(3LA)에 마이크로스트립라인으로 구성하고, 상기 코크코일과 고역 및 저역제거탱크와 고조파필터를 2층(2LA)에 마이크로스트립라인으로 배치구성하며, 상기 입출력단과 정합회로부를 4층(4LA)에 마이크로스트립라인으로 배치구성하여 구성한다.FIG. 3 is a view for explaining the interlayer structure of a multilayer board according to the present invention. Referring to FIG. 3, in the configuration of the high frequency power amplifier on a multilayer board, dielectrics 1, 2, and 3 are laminated. In between, the ground part is composed of a microstrip line on the first floor (1LA) and the third floor (3LA), which are the lowest layers, and the coke coil, the high pass and low pass removal tank, and the harmonic filter are placed on the second layer (2LA) as microstrip lines. The input / output terminal and the matching circuit unit are arranged in a microstrip line on the fourth layer 4LA.

이와같이 구성된 본 발명에 따른 동작을 첨부도면에 의거하여 하기에 상세히 설명한다.Operation according to the present invention configured as described above will be described in detail below based on the accompanying drawings.

제2도를 참조하면, 본 발명에서는 1단과 2단 및 3단 전력증폭트랜지스터(Q31, Q32, Q33)를 고역과 저역 즉, 두 통신대역의 중심주파수(fp, fc) 모두에 대해서 거의 동일한 전력증폭을 할 수 있도록 설계하였으며, 상기 전력증폭트랜지스터(Q31, Q32, Q33)로 코크코일(L1~L3)과 콘덴서(C1~C3)에 의해서 전원전압(Vdd1, Vdd2, Vdd3)이 안정되게 공급된다. 그리고, 상기 두가지의 통신대역의 중심주파수(fp, fc)의 차이가 너무 큰 경우에는 광대역 설계가 불가능하므로, 두 중심주파수(fp, fc)에서 특성을 가지는 2개의 폴(pole)을 갖도록 설계하여, 1단과 2단 및 3단 전력증폭트랜지스터(Q31, Q32, Q33)를 두가지의 통신대역에서 공유하도록 다층기판을 사용하여 모듈단일화를 달성하였으며, 상기 1단과 2단 및 3단 전력 증폭트랜지스터(Q31, Q32, Q33) 각각의 중간에 정합회로부(31, 33, 35)도 상기 두개의 통신대역을 손실없이 후단으로 매칭시킨다.Referring to FIG. 2, in the present invention, the first, second, and third stage power amplifier transistors Q31, Q32, and Q33 have high and low frequencies, i.e., almost the same power for both center frequencies (fp, fc) of both communication bands. Designed to be amplified, power supply voltages Vdd1, Vdd2, and Vdd3 are stably supplied to the power amplifier transistors Q31, Q32, and Q33 by coke coils L1 to L3 and capacitors C1 to C3. . In addition, if the difference between the center frequencies (fp, fc) of the two communication bands is too large, it is impossible to design a wide band, so that it is designed to have two poles having characteristics at the two center frequencies (fp, fc). In order to share a single stage, two-stage and three-stage power amplifier transistors (Q31, Q32, Q33) in two communication bands, a module unification was achieved by using a multilayer board. In the middle of each of the Q32 and Q33, matching circuits 31, 33, and 35 also match the two communication bands without loss.

한편, 상기 최후단 전력증폭트랜지스터(Q33)를 통한 주파수중에서 고역통신주파수에대해서 설명하면, 상기 저역과 고역주파수중에서 저역통신의 중심주파수(fc)는 저역제거 탱크부(41)에서 제거된 다음에 고역통신주파수는 정합회로부(42)를 통해서 후단으로 매칭되는데, 상기 정합회로부(42)를 통한 주파수중에 고역중심주파수의 고조파성분은 고역고조파필터(43)에서 차단된 다음에 순수한 고역중심주파수(fp)만 출력되는 것이다.On the other hand, when the high frequency communication frequency in the frequency through the last power amplifier transistor (Q33) will be described, the center frequency (fc) of the low frequency communication among the low and high frequency is removed from the low pass removing tank 41 The high frequency communication frequency is matched to the rear end through the matching circuit unit 42. Among the frequencies through the matching circuit unit 42, the harmonic components of the high frequency center frequency are cut off by the high frequency harmonic filter 43, and then the pure high frequency center frequency (fp). ) Will be printed.

다른한편, 상기 최후단 전력증폭트랜지스터(Q33)를 통한 주파수중에서 저역통신주파수에 대해서 설명하면, 상기 저역과 고역주파수중에서 고역통신의 중심수파수(fc)는 고역제거탱크부(51)에서 제거된 다음에 저역통신주파수는 정합회로부(38b)를 통해서 후단으로 매칭되는데, 상기 정합회로부(52)를 통한 주파수중에서 저역중심 주파수의 고조파성분은 저역고조파필터(53)에서 차단된 다음에 순수한 저역중심주파수(fc)만 출력되는 것이다.On the other hand, when the low frequency communication frequency among the frequencies through the last power amplifier transistor (Q33) will be described, the center frequency (fc) of the high frequency communication in the low and high frequency is removed from the high frequency removal tank unit (51). Next, the low frequency communication frequency is matched to the rear end through the matching circuit part 38b. Among the frequencies through the matching circuit part 52, the harmonic components of the low center frequency are cut off by the low frequency harmonic filter 53, and then the pure low center frequency. Only (fc) is printed.

상술한 바와같은 본 발명에 의하면, 두개지의 통신주파수를 처리하는 통신시스템에서 듀얼밴드(Dual-Band)를 위한 고주파 전력증폭모듈(Power Amplifier Module:PAM)을 다층기판을 이용하여 하나의 모듈로 제작함으로써, 전력증폭기의 사이즈를 획기적으로 축소할 수 있는 특별한 효과가 있는 것이다.According to the present invention as described above, a high frequency power amplifier module (PAM) for dual-band (Dual-Band) in a communication system processing two communication frequencies as a single module using a multi-layer substrate By doing so, there is a special effect that can significantly reduce the size of the power amplifier.

Claims (3)

2가지의 통신주파수를 충족시키는 3단의 전력증폭트랜지스터(Q31, Q32, Q33);Three stages of power amplifier transistors Q31, Q32, and Q33 that satisfy two communication frequencies; 상기 각 전력증폭트랜지스터(Q31, Q32, Q33) 사이에 접속되어, 상기 2가지의 통신주파수를 손실없이 매칭시키는 정합회로부(31, 33, 35);A matching circuit section (31, 33, 35) connected between each of the power amplifier transistors (Q31, Q32, Q33) to match the two communication frequencies without loss; 상기 전력증폭트랜지스터(Q31, Q32, Q33)에 전원전압(Vdd1, Vdd2, Vdd)을 안정되게 제공하기 위한 코크코일(L1~L3) 및 콘덴서(C1~C3);Coke coils L1 to L3 and capacitors C1 to C3 for stably providing power voltages Vdd1, Vdd2, and Vdd to the power amplifier transistors Q31, Q32, and Q33; 상기 최후단 전력증폭트랜지스터(Q33)로부터 두개의 통신주파수중에서 저역통신의 중심주파수(fC)를 제거하는 저역제거탱크부(41);A low pass removing tank unit 41 for removing a center frequency fC of low pass communication among two communication frequencies from the last power amplifier transistor Q33; 상기 저역제거탱크부(41)를 통한 고역통신주파신호를 후단으로 매칭시키는 정합회로부(42);A matching circuit part 42 for matching a high frequency communication frequency signal through the low frequency removing tank part 41 to a rear end; 상기 정합회로부(42)를 통한 신호중 고역통신주파수의 고조파성분을 제거하여 출력하는 고역고조파필터(43);A harmonic filter 43 for removing and outputting harmonic components of the high frequency communication frequency in the signal through the matching circuit unit 42; 상기 최후단 전력증폭트랜지스터(Q33)로부터 두개의 통신주파수중에서 고역통신의 중심주파수를 제거하는 고역제거탱크부(51);A high frequency removal tank unit 51 for removing a center frequency of high frequency communication from two communication frequencies from the last power amplifier transistor Q33; 상기 고역제거탱크부(51)를 통한 저역통신주파신호를 후단으로 매칭시키는 정합회로부(52);A matching circuit unit 52 for matching a low frequency communication frequency signal through the high frequency elimination tank unit 51 to the rear stage; 상기 정합회로부(52)를 통한 신호중 저역통신주파수의 고조파성분을 제거하여 출력하는 저역고조파필터(53);를 구비함을 특징으로 하는 듀얼밴드 고주파전력증폭기.And a low pass harmonic filter (53) which removes and outputs harmonic components of a low pass communication frequency in the signal through the matching circuit unit (52). 제1항에 있어서, 상기 고주파전력증폭기를 다층기판에 구성함에 있어서, 유전체 1, 2, 3을 적층하며, 상기 유전체사이에, 접지부를 최하단층인 1층과 3층에 마이크로스트립라인으로 구성하고, 상기 코크코일과 고역 및 저역제거탱크와 고조파필터를 2층에 마이크로스트립라인으로 배치구성하며, 상기 입출력단과 정합회로부를 4층(4LA)에 마이크로스트립라인으로 배치구성하여 구성함을 특징으로 하는 듀얼밴드 고주파전력증폭기.The method of claim 1, wherein in the multi-layer substrate, the high frequency power amplifier is laminated with dielectrics 1, 2, and 3, and between the dielectrics, the ground portion is composed of microstrip lines on the first and third layers, which are the lowest layers. And arranging the coke coil, the high pass and low pass removal tank, and the harmonic filter on the second floor as a microstrip line, and configuring the input / output end and the matching circuit part on the fourth floor (4LA) as a microstrip line. Dual band high frequency power amplifier. 제1항에 있어서, 상기 고역고조파필터(43)는 대역통과필터로 구성하고, 상기 저역고조파필터(53)는 저역통과필터로 구성함을 특징으로 하는 듀얼밴드 고주파전력증폭기.2. The dual band high frequency power amplifier of claim 1, wherein the harmonic filter (43) comprises a band pass filter, and the low harmonic filter (53) comprises a low pass filter.
KR1019960057268A 1996-11-26 1996-11-26 Dual band high frequency power amplifier KR100190637B1 (en)

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