KR100186969B1 - Semiconductor device manufacturing method - Google Patents
Semiconductor device manufacturing methodInfo
- Publication number
- KR100186969B1 KR100186969B1 KR1019980034757A KR19980034757A KR100186969B1 KR 100186969 B1 KR100186969 B1 KR 100186969B1 KR 1019980034757 A KR1019980034757 A KR 1019980034757A KR 19980034757 A KR19980034757 A KR 19980034757A KR 100186969 B1 KR100186969 B1 KR 100186969B1
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor device
- device manufacturing
- manufacturing
- semiconductor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1277—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using a crystallisation promoting species, e.g. local introduction of Ni catalyst
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14700293 | 1993-05-26 | ||
KR1019940011757A KR100186886B1 (en) | 1993-05-26 | 1994-05-26 | Semiconductor device manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR100186969B1 true KR100186969B1 (en) | 1999-04-15 |
Family
ID=26477677
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019980034757A KR100186969B1 (en) | 1993-05-26 | 1998-08-27 | Semiconductor device manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100186969B1 (en) |
-
1998
- 1998-08-27 KR KR1019980034757A patent/KR100186969B1/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB9326286D0 (en) | Semiconductor device manufacturing method | |
KR970004450B1 (en) | Method for manufacturing semiconductor device | |
GB2274741B (en) | Semiconductor device and method for its manufacture | |
GB2288276B (en) | Semiconductor device and method for manufacturing the same | |
KR960010061B1 (en) | Integrated circuit device manufacturing method | |
KR960008517B1 (en) | Semiconductor device and the manufacturing method | |
EP0612103A3 (en) | Method of manufacturing a silicon-on-insulator semiconductor device. | |
HK1005420A1 (en) | Semiconductor device and manufacturing method thereof | |
SG46361A1 (en) | Flagless semiconductor device and method for making the same | |
SG63739A1 (en) | Manufacturing method fo semiconductor devices | |
KR0136685B1 (en) | Semiconductor device and fabricating method thereof | |
EP0604234A3 (en) | Semiconductor device manufacturing method. | |
EP0667639A3 (en) | Method of manufacturing semiconductor device. | |
EP0717477A3 (en) | Semiconductor device and method for manufacturing the same | |
GB2285173B (en) | Semiconductor device and manufacturing method thereof | |
EP0619602A3 (en) | Semiconductor device and method for manufacturing semiconductor device. | |
EP0738004A4 (en) | Method and device for manufacturing semiconductor substrate | |
EP0741410A3 (en) | Semiconductor device and method for manufacturing the same | |
SG68542A1 (en) | Semiconductor device and manufacturing method thereof | |
EP0650193A3 (en) | Semiconductor device and method for manufacturing the same. | |
GB2291536B (en) | Method for manufacturing semiconductor device | |
GB2278234B (en) | Fabricating semiconductor devices | |
GB9215477D0 (en) | Semiconductor device and manufacturing method therefor | |
KR970009171B1 (en) | Semiconductor device and a method for manufacturing thereof | |
EP0709879A4 (en) | Method for manufacturing semiconductor |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20111206 Year of fee payment: 14 |
|
FPAY | Annual fee payment |
Payment date: 20121203 Year of fee payment: 15 |
|
LAPS | Lapse due to unpaid annual fee |