KR0174368B1 - Manufacturing method of semiconductor memory device - Google Patents

Manufacturing method of semiconductor memory device

Info

Publication number
KR0174368B1
KR0174368B1 KR1019980018968A KR19980018968A KR0174368B1 KR 0174368 B1 KR0174368 B1 KR 0174368B1 KR 1019980018968 A KR1019980018968 A KR 1019980018968A KR 19980018968 A KR19980018968 A KR 19980018968A KR 0174368 B1 KR0174368 B1 KR 0174368B1
Authority
KR
South Korea
Prior art keywords
manufacturing
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019980018968A
Other languages
Korean (ko)
Inventor
Atsushi Hiraiwa
Shinichiro Kimura
Toshiyuki Mine
Takashi Kobayashi
Tokuo Kure
Shinpei Iijima
Jiro Yukami
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP63206470A external-priority patent/JP2703275B2/en
Priority claimed from JP63228579A external-priority patent/JPH0278270A/en
Priority claimed from KR1019890011635A external-priority patent/KR0166056B1/en
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of KR0174368B1 publication Critical patent/KR0174368B1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
KR1019980018968A 1988-08-22 1998-05-26 Manufacturing method of semiconductor memory device KR0174368B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63206470A JP2703275B2 (en) 1988-08-22 1988-08-22 Semiconductor storage device
JP63228579A JPH0278270A (en) 1988-09-14 1988-09-14 Semiconductor memory device and manufacture thereof
KR1019890011635A KR0166056B1 (en) 1988-08-22 1989-08-16 Semiconductor device

Publications (1)

Publication Number Publication Date
KR0174368B1 true KR0174368B1 (en) 1999-10-01

Family

ID=27328641

Family Applications (5)

Application Number Title Priority Date Filing Date
KR1019980018969A KR0174367B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018965A KR0174371B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018967A KR0174369B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018966A KR0174370B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018968A KR0174368B1 (en) 1988-08-22 1998-05-26 Manufacturing method of semiconductor memory device

Family Applications Before (4)

Application Number Title Priority Date Filing Date
KR1019980018969A KR0174367B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018965A KR0174371B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018967A KR0174369B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device
KR1019980018966A KR0174370B1 (en) 1988-08-22 1998-05-26 Semiconductor memory device

Country Status (1)

Country Link
KR (5) KR0174367B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102193413B1 (en) 2020-05-08 2020-12-21 김진호 Synthetic resin panel manufacture method and box using the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102193413B1 (en) 2020-05-08 2020-12-21 김진호 Synthetic resin panel manufacture method and box using the same

Also Published As

Publication number Publication date
KR0174369B1 (en) 1999-10-01
KR0174371B1 (en) 1999-10-01
KR0174370B1 (en) 1999-10-01
KR0174367B1 (en) 1999-10-01

Similar Documents

Publication Publication Date Title
GB8813303D0 (en) Method of manufacturing semiconductor device
KR930005944B1 (en) Manufacturing method of semiconductor device
GB8815442D0 (en) Method of manufacturing semiconductor device
DE3565339D1 (en) Semiconductor memory device and method of manufacturing the same
GB8813738D0 (en) Semiconductor device & method of manufacturing same
EP0442718A3 (en) Method of manufacturing semiconductor device
EP0345380A3 (en) Semiconductor device and manufacturing method thereof
KR970004459B1 (en) Nonvolatile semiconductor memory and the method of manufacturing the same
EP0721211A3 (en) Semiconductor device and method of manufacturing the same
DE3573965D1 (en) Semiconductor read only memory device and method of manufacturing the same
EP0304896A3 (en) Non-volatile semiconductor memory device and method of the manufacture thereof
EP0409107A3 (en) A nonvolatile semiconductor memory device and a method of manufacturing thereof
EP0419663A4 (en) Nonvolatile semiconductor memory and method of producing the same
EP0273728A3 (en) Semiconductor memory device and method of manufacturing the same
KR960008503B1 (en) Manufacturing method of semiconductor device
HK30297A (en) Method of manufacturing a semiconductor device
KR910009785B1 (en) Semiconductor memory device and method of fabrication therefor
EP0370775A3 (en) Method of manufacturing semiconductor device
GB9027710D0 (en) Method of manufacturing semiconductor device
EP0197284A3 (en) Method of producing semiconductor memory device
GB8801171D0 (en) Method of manufacturing semiconductor device
GB2206446B (en) Method of manufacturing semiconductor device
KR900000907A (en) Method of manufacturing a semiconductor memory device
EP0463174A4 (en) Method of manufacturing semiconductor device
EP0437371A3 (en) Method of manufacturing semiconductor device

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
G170 Re-publication after modification of scope of protection [patent]
FPAY Annual fee payment

Payment date: 20111019

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee