KR0148110B1 - Lead frame and semiconductor device using the same - Google Patents

Abstract

In the lead frame used in the semiconductor device, a plurality of inner leads are made of a conductive material having a thin thickness in order to easily form a fine pattern, and a plurality of outer leads are formed integrally with each of the inner leads and it is desired to increase the thickness thereof. It is coated with a metal layer to obtain strength. The semiconductor chip is electrically connected to the inner leads. A part of the lead frame including the semiconductor chip and the inner leads is encapsulated in a hermetic shape with a resin. In this way, a semiconductor device is obtained.

Description

Lead frame and semiconductor device using same

1A to 1D are plan views of embodiments of a leadframe according to the present invention.

2A to 2D are plan views of embodiments of the semiconductor device using the lead frame shown in FIGS. 1A to 1D according to the present invention.

3 is a cross-sectional view of the semiconductor device shown in FIG. 2A or 2B.

4 is a cross-sectional view of the semiconductor device shown in FIG. 2C or 2D.

5a to 5c are cross-sectional views of modifications of the leadframe according to the present invention.

6A to 6D are cross-sectional views of modifications of the internal lead bonded semiconductor device according to the present invention.

7 is a cross-sectional view of an embodiment of a wire bonded semiconductor device according to the present invention.

8 is a cross-sectional view of another embodiment of a wire bonded semiconductor device according to the present invention.

9A to 9D are cross sectional views of modifications of the potting type semiconductor device.

10 is a cross-sectional view of another embodiment of a potting semiconductor device.

11 is a cross-sectional view of an embodiment of an internal lead bonded semiconductor device having a heat spreader.

12 is a cross-sectional view of an embodiment of a wire bonded semiconductor device having a radiator.

13 is a cross-sectional view of another embodiment of a wire bonded semiconductor device having a radiator.

The present invention relates to a lead frame and a semiconductor device using the lead frame, and the present invention relates to a process for manufacturing the lead frame.

BACKGROUND ART In a lead frame used in a semiconductor device, a semiconductor device is highly integrated, a multi-pin lead frame having a plurality of leads, and a fine lead pattern structure have been developed and manufactured. Therefore, in order to form a fine pattern structure in a lead frame, a relatively thin material is used as the lead frame base, and an etching process method is widely employed to form such a micro pattern. This etching processing method is more suitable than other processing methods such as the punching processing method, so that such fine patterns are easily formed. However, in the conventional method of manufacturing the lead frame, there is a limit in forming an extremely fine lead pattern. Therefore, TAB (tape automated bonding) tape was developed and used. As a result, a finer pattern than a conventional metal lead frame could be formed. A TAB tape is formed on an electrically insulating base film, and the conductive film is etched to form a desired conductive pattern. Using such a TAB tape allows the conductive patterns to be supported on a thin flexible base film, thereby greatly reducing the thickness of the conductive patterns, that is, several tens of micrometers. Thus, it is possible to form finer patterns that could not be achieved by conventional metal leadframes. On the other hand, a semiconductor device is conventionally manufactured as follows. After the inner leads of the lead frame were electrically connected to the semiconductor chip by wire bonding, the lead frame was hermetically sealed with resin to manufacture a product. Even when TAB tape is used, the lead frame is hermetically sealed with resin to manufacture a product of a semiconductor device. However, as described above, since the TAB tape includes a plurality of leads made of a conductive thin film, the TAB tape has a problem that the strength of the leads is not sufficient. The problems described above with respect to TAB tapes also appear when fabricating leadframes using so-called single-layered TAB tapes in which extremely thin leads are formed of an extremely thin, i.e., 100 μm or less, conductive material. It is also necessary to prevent the leads from deforming or bending after the leads are formed. Accordingly, in order to stably mount a semiconductor product on a mounting plate such as a printed circuit board without deformation of a lead, it is necessary for the external lead to have a certain strength.

An object of the present invention is to provide a lead frame that can easily handle a lead frame, such as a TAB tape or a lead frame using a thin material, and the product of a semiconductor device using the lead frame can be easily mounted on a mounting plate. There is provided a semiconductor device using the lead frame. According to one aspect of the present invention there is provided a lead frame for use in a semiconductor device, comprising: a plurality of inner leads made of a thin thickness conductive material for easily forming a fine pattern of the inner leads; It includes a plurality of outer leads formed integrally with the respective inner leads, the outer lead is covered with a metal layer to increase the thickness to obtain the desired strength of the outer leads.

According to another aspect of the present invention there is provided a leadframe to be used for a semiconductor device; Insulating base film; A conductive pattern formed on the insulating base film, wherein the conductive pattern includes a plurality of inner leads and a plurality of outer leads integrally formed with the respective inner leads, wherein the inner leads are relatively thin and the outer leads are metal layers. The thickness of the furnace is increased to obtain the desired strength of the outer leads.

According to another aspect of the invention there is provided a method of manufacturing a leadframe for use in a semiconductor device, the method comprising: Forming a conductive layer on the insulating base film; Etching the conductive layer to form a conductive pattern including a plurality of inner leads and a plurality of outer leads integrally formed with the inner leads, respectively; And covering the outer leads with metal layers to increase the thickness of the outer lead to obtain the desired strength of the outer lead.

According to another aspect of the invention there is provided a method of manufacturing a leadframe for use in a semiconductor device, which comprises: a conductive hole on an insulating base film having a device hole in a central position and window holes located away from the center device hole. Forming a layer; A plurality of inner leads and a plurality of outer leads integrally formed with each of them, each of the inner leads extending inwardly into the central device hole, and the outer lead upwards of the window hole from the inner lead outwards; Etching the conductive layer to form an extended conductive pattern; And covering the outer leads with metal layers to increase their thickness to increase the desired strength of the outer leads.

According to another aspect of the present invention there is provided a semiconductor device, which comprises: a plurality of inner leads made of a thin thickness conductive material and a plurality of outer bodies integrally formed with each inner lead in order to easily form a fine pattern of inner leads A lead frame (a) for use in a semiconductor device comprising a lead and covered with metal layers to increase thickness to increase the strength of the outer lead; A semiconductor chip (b) electrically connected to the internal leads; And a resin (c) which hermetically seals a part of the lead frame including the semiconductor chip and the inner leads. According to another aspect of the present invention there is provided a semiconductor device comprising: an insulating base film having a device hole in a central portion thereof and a window hole located away from the device hole; A plurality of inner leads formed on the insulating base film and integrally formed on each of the inner leads, wherein each of the inner leads extends inwardly into the central device hole, and each of the outer leads is formed on the window. A lead frame (a) comprising a conductive pattern extending from the inner lead toward the outside from the inner lead and having a relatively thin thickness but covered with metal layers to increase their thickness in order to increase the strength of the outer leads; ; A semiconductor chip (b) mounted and electrically connected to the inner leads in the central opening; And a resin (c) for hermetically sealing a part of the lead frame including the semiconductor chip and the inner lead. According to yet another aspect of the present invention, a semiconductor device is provided; An insulating base film having window holes located at a central position thereof; A plurality of inner leads formed on the insulating base film and a plurality of outer leads integrally formed with the respective inner leads, wherein each of the inner leads extends toward a die-pad and each of the outer leads A leadframe (a) extending from the inner lead toward the outside from the inner lead, wherein the inner leads are relatively thin in thickness but covered with metal layers to increase their thickness in order to increase the strength of the outer leads to their desired strength; ; A semiconductor chip (b) mounted on the die pad; A bonding wire (c) electrically connecting the semiconductor chip to the internal leads; And a resin (d) which hermetically seals a part of the lead frame including the semiconductor chip and the inner leads. Embodiments of the present invention will be described with reference to the accompanying drawings.

1A to 1D are plan views of embodiments of a lead frame composed of a TAB tape according to the present invention. The TAB tape includes an electrically insulating flexible base film 10 made of polyimide, and an electrically conductive pattern formed on the surface of the base film, and the conductive pattern having a desired pattern is formed on the base film 10. It can form by a well-known method of etching a thin film. In order to attach a conductive thin film on the base film, a known method such as sputtering, vapor deposition, or bonding a copper foil onto the base film using a suitable red chopping agent can be used.

After installing the device hole 12 at the center position of the TAB tape in the base film 10 (inner lead bonding type) of the TAB tapes shown in FIGS. 1A and 1B, the device is dropped from the device holes and symmetrically disposed. Four window holes 14 are provided and sprocket holes 16 are regularly arranged at equal distances on each side end of the TAB tape. The copper foil is then adhered to the base film 10 and etched to obtain the desired pattern. The conductive pattern extends outward from the inner leads 18 and the respective inner leads 18 with respective inner ends extending toward the inside of the device holes 12 to the outside. Corresponding external leads 20. The outer lead 20 is cut at the outer end of the Uhe window hole 14 in which a semiconductor chip (not shown) is mounted on the TAB tape as shown by the line P in FIG. 1A and sealed with resin (not shown). Not).

The wire bonding type TAB tapes shown in FIGS. 1C and 1D do not have a center device hole and the die pads 28 are formed at the center of the TAB tape in FIGS. 1A and 1B. It is substantially the same as the TAB tape shown.

The conductive die pad 28 may be formed simultaneously with the conductive pattern including the inner leads 18 and the outer leads 20.

The TAB tapes shown in Figs. 1b and 1d are substantially the same as the TAB tapes shown in Figs. 1a and 1c, respectively, except that the connecting portion 20a is provided for continuous connection with the external leads. The connecting portion 20a may also be formed at the same time as the conductive pattern including the inner leads 18 and the outer leads 20. In addition, these connection portions 20a are mounted on a TAB tape, and the semiconductor chips 20a are cut as shown by lines Q in FIGS. 1b and 1d to separate adjacent external leads 20, and resins are formed. Airtightly sealed (not shown).

Semiconductor devices using lead frames of FIGS. 1A-1D in FIGS. 2A-2D are shown, respectively. 3 is a cross-sectional view of the (internal lead bonding type) TAB tape of the semiconductor device shown in FIG. 2A or FIG. 2B. 4 is a cross-sectional view of the (wire bonding) semiconductor device of FIG. 2C or FIG. 2D. In each type of TAB tape, the thickness of the conductive portion of the outer lead is increased to have a thickness substantially the same as that of the conventional lead metal frame.

Accordingly, in the embodiment of the present invention, after bonding the copper foil to the base film 10, the copper foil is etched to form a desired conductive pattern including the inner leads 18 and the outer leads 20 corresponding thereto. Nickel plated as in the method of. Thereafter, only copper is further plated on portions of the outer leads 20 to increase their thickness.

As shown in FIGS. 3 and 4, as the thickness of the outer leads 20 is increased by copper plating, the strength may be increased to substantially the same level as a conventional metal lead frame. The thickness as well as the width of the outer lead 20 can be increased by the copper plating.

The thickness as well as the width of the outer lead 20 can be increased by the copper plating. However, since the gap between adjacent outer leads 20 is much larger than the gap between adjacent inner leads 18, the outer leads 20 are effective to increase their thickness to a certain value to increase their strength.

In a typical TAB tape, the thickness of the inner leads 18 (ie, the thickness of the copper foil) may be about 12 to 70 µm, and the thickness of the outer leads 20 may be increased to about 125 µm.

Inner lead at the position of the inner leads 18 corresponding to the fixing position of the mold (not shown) using the square or frame solder resist 22 as clearly shown in FIGS. 2A, 2B, 3 and 4 Apply to the field. The semiconductor device is applied to the inner leads adjacent to the next step of sealing the resin 26 (inner leads at the position of the inner leads 18. The inner lead adjacent to the next step of sealing the semiconductor device with the resin 26). The gaps between the holes 18 are filled with resist to prevent the encapsulation resin 26 from flowing out of the mold (not shown) during the molding process.

In the TAB tapes (i.e., internal lead bonded tapes) shown in Figs. 2a, 2b, and 3, the inner chip 18 is simultaneously bonded through the bumps 18a provided on the surface thereof. The semiconductor chip 24 is mounted on the TAB tape with the semiconductor chip 24 connected thereto. Then, the TAB tape is fixed between the base film 10 and the solder resist 22 by a mold (not shown) in the thickness direction, and the resin 26 is filled into the mold to obtain a hermetically sealed semiconductor device.

On the other hand, in the TAB tapes (ie wire-bonding TAB tapes) shown in FIGS. 2C, 2D and 4, the die pad 28 and the inner leads 18 are mutually supported by the base film portion 30 to prevent their movement. Maintain the micropattern of the inner leads. After fixing the semiconductor chip 24 to the die pad 28 of the TAB tape, the semiconductor chip 24 is connected to the inner leads 18 by bonding wires 18b by a known wire bonding process. As described above, the solder resist 22 is applied to the base film portion 32 to fill gaps between adjacent inner leads 18 with the resist to prevent the encapsulation resin 26 from flowing out of the mold during molding. do.

As shown in FIGS. 3 and 4, the thickness of the outer leads 20 is increased by copper plating so that the strength of the outer leads 20 is substantially the same as that of the conventional metal lead frame.

Therefore, the parts of the outer lead 20 can be easily bent and handled, so that the semiconductor device using the lead frame of these embodiments can be easily mounted on a circuit board (not shown), as shown in FIGS. 2B and 2D. In embodiments having the same connecting portion 20a, the tie bar 20a can be easily removed by connecting the line Q to the line Q. FIG. Meanwhile, the thickness of the inner leads 18 is much smaller than the thickness of the outer leads 20.

Therefore, a TAB tape having a fine pattern of internal leads and suitable for a high density semiconductor device can be obtained.

The thickness of the outer leads 20 is not flat or uniform after the thickness is increased by copper plating. In that case, the outer leads 20 are casted or pressed to obtain flat outer leads 20.

When the thickness of the outer leads 20 is adjusted by casting treatment or the like, their widths are also adjusted at the same time to obtain a desired width.

5a to 5c are cross sectional views of variants of the TAB tape or lead frame. The inner lead bonded tape of FIG. 5A corresponds to the TAB tape shown in FIGS. 1A and 1B. The wire-bonded TAB tape of FIG. 5B corresponds to the TAB tape shown in FIG. 1C or 1D. Another wire-bonded TAB tape of FIG. 5C is the same as that of FIG. 5B except that the TAB tape of FIG. 5C has a device hole 12 and second window holes 14a, and a semiconductor chip as shown in FIG. The second window holes 14a and the first window hole 14 may be mounted on the bottom surface of the die pad 28 and the semiconductor chip 24 is provided between the device holes 12 in the center. The inner leads 18 may be connected to each other by the bonding wires 18b.

6A through 6D are cross-sectional views of modifications of the internal lead bonding semiconductor device. In the embodiment of FIG. 6A, the solder resist 22 may have an increased thickness of the outer leads 20 by copper plating.

Previously applied to the inner leads 18 so that a thick portion of the outer lead 20 extends from the position of the solder resist 22. In the embodiment of FIG. 6B, the solder resist is applied after the thickness of the outer leads 20 is increased by copper plating, so that the solder resist 22 is formed at the portion where the thick portion and the thin portion are changed. In the embodiment of FIG. 6C, the solder register 22 may be applied before or after the thickness of the outer leads 20 is increased by copper plating. In the embodiment of FIG. 6d, the semiconductor device is hermetically sealed without applying the solder resist 22 so that the base film 10 is completely covered with molding resin as shown in the right half of FIG. 6d, or the base film 10 is Partially covered as shown at left half. In the embodiment of FIGS. 6B and 6D, the portion of the outer leads 20 having increased thickness is covered with the molding resin 26. That is, only the thick portion of the outer lead 20 extends out of the molding resin 26. In particular, since the base portions of the outer leads 20 whose thickness is changed can be stably supported by the molding resin 26, the outer leads 20 can be easily prevented from being deformed or bent.

7 is a cross-sectional view of a wire bonded semiconductor device. In the figure, the semiconductor chip 24 is mounted on the bottom surface of the die pad 28 and is connected to the inner leads 18b by the bonding wires 18b through the second window holes 14a described in FIG. 5C. . As for the solder resist 22, an embodiment in which the solder resist 22 is applied to the inner leads 18 before the thickness of the outer leads 20 is increased by copper plating is shown in FIG. The solder resist 22 may be applied after copper plating as in the embodiment of FIG. 6, or the solder resist 22 may be applied before or after copper plating as in the embodiment of FIG. 6C. There is no need for a solder resist as in the embodiment of Fig. 6d. 8 is a cross-sectional view of another wire bonded semiconductor device. In the figure, the semiconductor chip 24 is mounted on the top surface of the die pad 28 of the TAB tape as shown in FIG. 5B and connected to the inner leads 18 by bonding wires 18b. In this embodiment, the solder resist 22 is applied to the inner leads 18 before copper plating as in the embodiment of FIG. 6A, but the solder resist 22 can be applied after copper plating as in the embodiment of FIG. 6B. Alternatively, it may be applied before or after copper plating as in the embodiment of FIG. 6C and there may be no solder resist 22 as in the embodiment of FIG. 6D.

In the embodiment of FIG. 8, when the flexible insulating base film 10 made of polyimide or the like is replaced with a gold plate made of copper or 42 alloy, the die pad 28, the inner leads 18 and the outer leads are made. A conductive pattern including 20 is formed on the metal plate 10 via an electrically insulative adhesive 10a. In this case, the metal plate 10 can also be used as a radiator.

9A to 9D are cross sectional views of modifications of the potting type semiconductor device. 9A through 9D are the same as the embodiments of FIGS. 6A through 6D except that the resin 27 covers the semiconductor chip 24 and the internal leads 18 by potting the resin. 10 is a cross sectional view of an embodiment of a wire bonded semiconductor device.

This embodiment is the same as the embodiment of FIG. 8 except that the resin is potted to cover the semiconductor chip 24 and the inner leads 18. In this embodiment, as in the embodiment of FIG. 8, the solder resist is applied to the inner leads 18 before copper plating, but this solder resist can be applied after copper plating or before or after copper plating and the solder resist 22 May not be present. As shown in FIG. 8, when the base film 10 of FIG. 10 is replaced with a metal plate, the die pad 28, the inner leads 18, and the outer leads 20 are electrically insulated (10a). It is formed on the metal plate 10 via. In this case, since the metal plate 10 is directly exposed, it is possible to effectively dissipate heat in the semiconductor device.

Embodiments of the semiconductor device having the radiator 34 in FIGS. 11, 12, and 13 are shown. The embodiment of FIG. 11 (internal lead bonding type) is the same as that of the embodiment of FIG. 6B except that the radiator 34 is disposed so as to effectively dissipate heat in the semiconductor device.

The radiator 34 is made of a suitable metal plate having a good thermal conductivity and has a so-called dish shape having a center portion contacting the semiconductor chip, an intermediate bottom exposed to the outside, and a peripheral portion contacting the base film 10.

The embodiment of FIG. 12 is substantially the same as the embodiment of FIG. 7 except that the radiator 34 is disposed. The heat dissipator 34 of this embodiment includes a center fin portion opposite the semiconductor chip 24 and in contact with the die pad 28, an intermediate upper portion exposed to the outside, and a peripheral portion in contact with the solder resist. The embodiment of FIG. 13 (other wire bonding type) is substantially the same as the embodiment of FIG. 8 except that the radiator 34 is disposed as in the above embodiments. The heat sink 34 of this embodiment is on the opposite side of the die pad 28 and the semiconductor chip 24, and has a center portion contacting the base film 10, an intermediate bottom exposed to the outside, and a base film 10. It includes the periphery to contact. In FIG. 8 and FIG. 10, an electrically insulating adhesive layer was formed on the surface of a metal plate made of copper or 42 alloy instead of a base film made of polyimide as the base film. It is not limited, but it can apply also in another Example. In the above-described embodiments, the lead frame is manufactured by the same process as that for producing the TAB tape. The copper foil is first formed on the base insulating film and then the copper foil is etched to form a conductive pattern. However, the lead frame may be formed by first forming a lead pattern and then supporting the lead pattern by an insulating film. In any case, the manufactured lead frame can be used to mount a semiconductor chip thereon, and can be treated like a conventional lead frame.

Resin-sealed semiconductor device products can also be easily handled. Therefore, in this specification, a lead frame used to mount a semiconductor chip thereon is also referred to as a TAB tape.

The outer leads may be partially copper plated to increase the thickness of a portion of the outer lead 20. However, in the above embodiment, the following method can be actually used in consideration of the bonding characteristics of the inner lead portions and the mounting characteristics of the outer lead portions.

In either case, copper may be used as the base material to increase the thickness of the outer leads.

(1) The inner leads are plated with gold to form protective layers, and the outer leads are plated with copper or solder to increase their thickness. In this case, since it is relatively difficult to plate gold directly, the entire lead surface including inner leads and outer leads is plated with nickel as the base layer, and then the entire leads are plated with gold, and then only the outer lead portions are plated to their thickness. It is desirable to increase. In this case, in order to increase the thickness, copper plating may be performed, followed by plating with solder, or plating with solder instead of copper. Thus, portions of the outer leads plated with copper or solder are exposed to the outside.

(2) Both inner and outer leads are plated with palladium to form protective layers. In this case, in consideration of the bonding characteristics of the inner lead portions and the mounting characteristics of the outer lead portions, the entire lead surface including the inner leads and the outer leads is plated with palladium. It is preferable to plate the entire lead surface including the inner leads and the outer leads with palladium after plating the copper foil with nickel as the base layer and plating the outer lead portions to increase their thickness. In this case, the outer lead portions are plated with copper to increase the thickness, and then solder is further plated thereon.

(3) Both inner and outer leads are plated with tin to form protective layers. In this case, since tin can be directly plated on the copper material without a base layer, only the outer lead portions may be plated with copper or solder to increase their thickness, and then the entire lead surface including the inner leads and the outer leads may be plated with tin. In this case, the outer lead portions are first plated with copper and then plated with solder to increase their thickness, and then the entire lead surface including inner leads and outer leads is plated with tin.

According to this method, since there is no underlayer, the thickness of the inner leads can be advantageously made as thin as possible. Therefore, this method is particularly suitable for producing TAB tapes with fine patterns. In the above embodiments, the thickness of the plating layer can be advantageously selected, so that the thickness of the plated gold is 0.3-5 μm, the thickness of the plated nickel is 1-20 μm, the thickness of the plated palladium is 0.1-0.5 μm, the plated tin The thickness of can be made about 0.5 micrometer.

The thickness of the plating layer to increase the thickness of the outer leads is 50 ~ 70㎛. Since the base material made of copper has a thickness of several tens of micrometers, the total thickness of the outer lead including the plated underlayer may be about 100 μm.

In the above-described embodiment, the outer leads are plated to increase their thickness, but the thickness of the outer leads 20 may be increased by other methods such as sputtering and deposition.

It will be appreciated by those skilled in the art that the foregoing description relates only to the disclosed embodiments of the invention and that various modifications can be made without departing from the spirit and scope of the invention.

Claims (7)

A step of forming a conductive layer on the insulating base film, in order to easily form a fine pattern, a plurality of inner leads made of a conductive material having a thickness of less than 70 ㎛ and integrally formed with each of the inner leads, the same as the conductive material Forming a conductive pattern comprising a plurality of outer leads made of a material by etching the conductive layer, and increasing a thickness of the outer leads to increase a predetermined strength of the outer leads to a metal layer thicker than the conductive material. And a step of covering the external leads. The semiconductor device according to claim 1, wherein the covering step includes plating the outer leads with a metal of the same material as the inner leads and the outer leads to increase the thickness of the outer leads. Method for manufacturing a lead frame used in. The semiconductor device according to claim 2, wherein the coating step includes a step of plating the entire surfaces including the inner leads and the outer leads with gold, silver, palladium, tin, or the like to form a protective metal layer. Manufacturing method of lead frame used Step of forming a conductive layer on the insulating base film having a device hole located in the center and window holes located away from the device hole in the center, made of a conductive material having a thickness of 70 μm or less to easily form a fine pattern A plurality of inner leads and a plurality of outer leads formed of the same material as the conductive material, wherein the inner leads extend inwardly into the center evis hole and the outer leads Etching the conductive layer to form a conductive pattern extending outwardly across the upper portion of the window hole, and covering the outer leads to increase the thickness to obtain strength. Method for producing a leadframe for use in an apparatus. Forming a conductive layer on the insulating base film having a window hole located away from the center position of the base film, a die pad positioned at the center position of the insulating base film, a plurality of inner leads, and each of the inner leads The conductive layer may include a plurality of outer leads formed in the conductive pattern, wherein each of the inner leads extends toward the die pad, and each of the outer leads extends the upper portion of the window hole from the inner lead toward the outside. And forming the outer lead with a metal layer to increase the strength by increasing the thickness, and forming the resultant by etching. An insulated base film having a device hole in a central position and window holes located away from the device hole. It is formed on the insulating base film, and formed integrally with each of the inner leads and a plurality of inner leads made of a conductive material having a thickness of less than 70㎛ in order to easily form a fine pattern, the same material as the conductive material A conductive pattern including a plurality of outer leads, wherein the inner lead extends inwardly to a central device hole, and the outer lead extends outwardly across the window hole, and the inner leads are relatively thin and the The outer leads include a lead frame (a) coated with a metal layer to increase thickness and increase strength; A semiconductor chip (b) mounted to the lead frame and electrically connected to the inner leads in the central opening; And a resin (c) for hermetically sealing a part of the lead frame including the semiconductor chip and the inner leads. An insulating base film having a window hole spaced from a central position, a plurality of inner leads formed on the insulating base film and made of a conductive material having a thickness of 70 μm or less to easily form a fine pattern, and the respective inner leads A plurality of outer leads made of the same material as the conductive material, wherein the inner leads extend toward the die pad, and the outer leads cross the upper portion of the window hole and face outward from the inner leads. A lead frame (a) having an extended conductive pattern, wherein the inner leads are relatively thin in thickness and the outer leads are coated with a metal layer to increase strength by increasing their thickness; A semiconductor chip (b) mounted on the die pad; Bonding wires (c) electrically connecting the semiconductor chip to the inner leads, and resin (d) for hermetically sealing a portion of the lead frame including the semiconductor chip and the inner leads. Semiconductor device.