KR0137600B1 - Method for forming a contact hole - Google Patents
Method for forming a contact holeInfo
- Publication number
- KR0137600B1 KR0137600B1 KR94024035A KR19940024035A KR0137600B1 KR 0137600 B1 KR0137600 B1 KR 0137600B1 KR 94024035 A KR94024035 A KR 94024035A KR 19940024035 A KR19940024035 A KR 19940024035A KR 0137600 B1 KR0137600 B1 KR 0137600B1
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- contact hole
- hole
- contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94024035A KR0137600B1 (en) | 1994-09-23 | 1994-09-23 | Method for forming a contact hole |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR94024035A KR0137600B1 (en) | 1994-09-23 | 1994-09-23 | Method for forming a contact hole |
Publications (2)
Publication Number | Publication Date |
---|---|
KR960011550A KR960011550A (en) | 1996-04-20 |
KR0137600B1 true KR0137600B1 (en) | 1998-04-28 |
Family
ID=19393360
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR94024035A KR0137600B1 (en) | 1994-09-23 | 1994-09-23 | Method for forming a contact hole |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0137600B1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980078155A (en) * | 1997-04-25 | 1998-11-16 | 김영환 | Contact hole formation method of semiconductor device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100720521B1 (en) * | 2005-12-28 | 2007-05-22 | 동부일렉트로닉스 주식회사 | Method for removing loading effect |
-
1994
- 1994-09-23 KR KR94024035A patent/KR0137600B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980078155A (en) * | 1997-04-25 | 1998-11-16 | 김영환 | Contact hole formation method of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
KR960011550A (en) | 1996-04-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20090121 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |