KR0135357B1 - Etching method of silicon-nitride film - Google Patents
Etching method of silicon-nitride filmInfo
- Publication number
- KR0135357B1 KR0135357B1 KR93030366A KR930030366A KR0135357B1 KR 0135357 B1 KR0135357 B1 KR 0135357B1 KR 93030366 A KR93030366 A KR 93030366A KR 930030366 A KR930030366 A KR 930030366A KR 0135357 B1 KR0135357 B1 KR 0135357B1
- Authority
- KR
- South Korea
- Prior art keywords
- silicon
- nitride film
- etching method
- etching
- nitride
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP34932592A JPH06204192A (en) | 1992-12-28 | 1992-12-28 | Etching method for silicon nitride film |
Publications (1)
Publication Number | Publication Date |
---|---|
KR0135357B1 true KR0135357B1 (en) | 1998-04-25 |
Family
ID=18403014
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93030366A KR0135357B1 (en) | 1992-12-28 | 1993-12-28 | Etching method of silicon-nitride film |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPH06204192A (en) |
KR (1) | KR0135357B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416694B1 (en) * | 1995-12-16 | 2004-05-27 | 주식회사 하이닉스반도체 | A method for wet etching of Si3N4 in semiconductor device |
KR20190130004A (en) * | 2017-06-08 | 2019-11-20 | 쇼와 덴코 가부시키가이샤 | Etching method |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002319574A (en) * | 2001-04-23 | 2002-10-31 | Nec Corp | Method for removing silicon nitride film |
JP6851217B2 (en) * | 2017-02-16 | 2021-03-31 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing equipment |
-
1992
- 1992-12-28 JP JP34932592A patent/JPH06204192A/en active Pending
-
1993
- 1993-12-28 KR KR93030366A patent/KR0135357B1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416694B1 (en) * | 1995-12-16 | 2004-05-27 | 주식회사 하이닉스반도체 | A method for wet etching of Si3N4 in semiconductor device |
KR20190130004A (en) * | 2017-06-08 | 2019-11-20 | 쇼와 덴코 가부시키가이샤 | Etching method |
Also Published As
Publication number | Publication date |
---|---|
JPH06204192A (en) | 1994-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20021231 Year of fee payment: 6 |
|
LAPS | Lapse due to unpaid annual fee |