KR0135357B1 - Etching method of silicon-nitride film - Google Patents

Etching method of silicon-nitride film

Info

Publication number
KR0135357B1
KR0135357B1 KR93030366A KR930030366A KR0135357B1 KR 0135357 B1 KR0135357 B1 KR 0135357B1 KR 93030366 A KR93030366 A KR 93030366A KR 930030366 A KR930030366 A KR 930030366A KR 0135357 B1 KR0135357 B1 KR 0135357B1
Authority
KR
South Korea
Prior art keywords
silicon
nitride film
etching method
etching
nitride
Prior art date
Application number
KR93030366A
Other languages
Korean (ko)
Inventor
Sadayuki Jimbo
Dokuhisa Oiwa
Haruki Mori
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of KR0135357B1 publication Critical patent/KR0135357B1/en

Links

KR93030366A 1992-12-28 1993-12-28 Etching method of silicon-nitride film KR0135357B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34932592A JPH06204192A (en) 1992-12-28 1992-12-28 Etching method for silicon nitride film

Publications (1)

Publication Number Publication Date
KR0135357B1 true KR0135357B1 (en) 1998-04-25

Family

ID=18403014

Family Applications (1)

Application Number Title Priority Date Filing Date
KR93030366A KR0135357B1 (en) 1992-12-28 1993-12-28 Etching method of silicon-nitride film

Country Status (2)

Country Link
JP (1) JPH06204192A (en)
KR (1) KR0135357B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416694B1 (en) * 1995-12-16 2004-05-27 주식회사 하이닉스반도체 A method for wet etching of Si3N4 in semiconductor device
KR20190130004A (en) * 2017-06-08 2019-11-20 쇼와 덴코 가부시키가이샤 Etching method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002319574A (en) * 2001-04-23 2002-10-31 Nec Corp Method for removing silicon nitride film
JP6851217B2 (en) * 2017-02-16 2021-03-31 東京エレクトロン株式会社 Plasma processing method and plasma processing equipment

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100416694B1 (en) * 1995-12-16 2004-05-27 주식회사 하이닉스반도체 A method for wet etching of Si3N4 in semiconductor device
KR20190130004A (en) * 2017-06-08 2019-11-20 쇼와 덴코 가부시키가이샤 Etching method

Also Published As

Publication number Publication date
JPH06204192A (en) 1994-07-22

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