KR0129922Y1 - Apparatus for adjusting pressure of a vacuum system - Google Patents
Apparatus for adjusting pressure of a vacuum system Download PDFInfo
- Publication number
- KR0129922Y1 KR0129922Y1 KR2019920000283U KR920000283U KR0129922Y1 KR 0129922 Y1 KR0129922 Y1 KR 0129922Y1 KR 2019920000283 U KR2019920000283 U KR 2019920000283U KR 920000283 U KR920000283 U KR 920000283U KR 0129922 Y1 KR0129922 Y1 KR 0129922Y1
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- pressure
- throttle valve
- potentiometer
- pumping
- chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
본 고안은 반도체 제조공정에서 압력을 효과적으로 통제하기 위한 진공시스템의 압력조절장치에 관한 것으로서, 기체의 흐름을 부드럽게 행할 수 있도록 하여 고진공도에서의 미세압력조절이 가능하도록 한 것이다. 종래에는 펌핑관이 원형으로 되어 있고 상기 펌핑관의 유로상에 설치된 포텐쇼미터는 원판상으로 되어 있기 때문에 미세한 압력조절이 어려워 고진공도에서의 압력조절에 많은 문제점이 있었다.이를 해결하기 위하여, 본 고안은 챔버(1)의 하방에 사각형상을 갖는 펌핑관(6)을 연결하고 상기 펌핑관의 유로상에는 사각판으로 된 한쌍의 스로틀밸브(7)(7a)를 상, 하로 설치하여 포텐쇼미터(4)의 작동에 따라 상기 스로틀밸브(7)(7a)가 힌지축을 중심으로 회전할 수 있도록 한 것이다The present invention relates to a pressure regulating device of a vacuum system for effectively controlling the pressure in a semiconductor manufacturing process, to enable a smooth flow of gas to enable fine pressure control at a high vacuum. Conventionally, since the pumping pipe has a circular shape and the potentiometer installed on the flow path of the pumping pipe has a disc shape, it is difficult to finely control the pressure, and thus there are many problems in pressure control at high vacuum. A pumping tube 6 having a quadrangular shape is connected to the lower side of the chamber 1, and a pair of throttle valves 7 and 7a made of square plates are installed on the flow path of the pumping tube up and down to form the potentiometer 4. According to the operation, the throttle valve 7 and 7a can be rotated about the hinge axis.
Description
제1도는 종래 압력조절장치를 갖는 진공시스템의 전체구성도.1 is an overall configuration diagram of a vacuum system having a conventional pressure regulator.
제2도는 제1도의 A부분 확대측면도.2 is an enlarged side view of portion A of FIG.
제3도는 본 고안 압력 조절장치를 갖는 진공시스템의 전체 구성도.3 is an overall configuration diagram of a vacuum system having a pressure regulator of the present invention.
제4도는 제3도의 B부분 확대 사시도.4 is an enlarged perspective view of portion B of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 챔버 4 : 포텐쇼미터1: chamber 4: potentiometer
6 : 펌핑관 7, 7a : 스로틀밸브6: pumping pipe 7, 7a: throttle valve
본 고안은 반도체 제조공정에서 압력을 효과적으로 통제하기 위한 진공시스템의 압력조절장치에 관한 것으로서, 특히 미세한 압력의 조절까지도 가능하게 하여 기체의 흐름이 부드럽게 행해질 수 있도록 한 것이다.The present invention relates to a pressure regulating device of a vacuum system for effectively controlling pressure in a semiconductor manufacturing process, and in particular, it is possible to control the minute pressure so that the gas flow can be smoothly performed.
일반적으로, 진공시스템은 가스가 유입될 수 있는 챔버(Chamber)(1)와, 상기 챔버내의 압력을 측정할 수 있도록 하는 압력게이지(2)와, 상기 챔버(1)의 하방에 연결되어 챔버내의 가스가 펌핑될 수 있도록 하는 원형펌핑관(16)과, 상기 압력게이지(2)에 측정된 압력값과 기설정된 압력값을 비교할 수 있도록 하는 CPU(중앙처리장치)(3)와, 상기 원형펌핑관(16)의 일측에 부착된 가변저항기인 포텐쇼미터(potentiometer)(4)와, 상기 CPU(3)의 압력 값을 비교하여 포텐쇼미터(4)의 저항값을 물체의 이동에 따라 변화시킬 수있도록 하는 콘트롤러(Controller)(5)로 구성된다.In general, the vacuum system is connected to a chamber (1) through which gas can be introduced, a pressure gauge (2) for measuring pressure in the chamber, and a chamber below the chamber (1). A circular pumping tube 16 for allowing gas to be pumped, a CPU (central processing unit) 3 for comparing a pressure value measured at the pressure gauge 2 with a predetermined pressure value, and the circular pumping The potentiometer 4, which is a variable resistor attached to one side of the tube 16, and the pressure value of the CPU 3 are compared to change the resistance value of the potentiometer 4 according to the movement of the object. It consists of a controller (5).
이와같이 구성된 진공시스템의 압력제어장치는 원형으로된 펌핑관(16)내에 힌지축(17a)을 중심으로 회전가능하도록 스로틀밸브(Throttle Valve)(17)를설치하여 상기 스로틀밸브가 포텐쇼미터(4)의 작동에 따라 회전되면서 챔버(1)내의 가스 펌핑량을 조절할 수 있도록 한 것이다.The pressure control device of the vacuum system configured as described above is provided with a throttle valve 17 so as to be rotatable about a hinge shaft 17a in a circular pumping tube 16 such that the throttle valve is connected to the potentiometer 4. It is to be able to adjust the gas pumping amount in the chamber (1) while rotating in accordance with the operation.
따라서, 챔버(1)내로 가스가 공급되면 상기 챔버내에 압력이 발생되고 이압력에 의해 챔버(1)내의 가스는 펌핑관(16)을 따라 펌핑되려고 하지만 스로틀밸브(17)가 펌핑관(16)의 유로를 막고 있으므로 펌핑 되지는 못하고 다만 챔버(1)의 일측에 부착된 압력게이지(2)의 압력만 상승시키게 된다. 이 때, 압력게이지(2)에 의해 검출된 압력값은 CPU(3)는 보내지는데, 상기CPU에서는 압력게이지(2)에서 받은 압력값과 CPU(3)자체에 설정된 압력값을 비교한 다음 콘트롤러(5)로 다시 보내게 된다.Accordingly, when gas is supplied into the chamber 1, a pressure is generated in the chamber, and by this pressure, the gas in the chamber 1 tries to be pumped along the pumping pipe 16, but the throttle valve 17 is pumped out of the pumping pipe 16. Because it is blocking the flow path of the pump is not pumped but only increases the pressure of the pressure gauge (2) attached to one side of the chamber (1). At this time, the pressure value detected by the pressure gauge 2 is sent to the CPU 3, in which the controller compares the pressure value received from the pressure gauge 2 with the pressure value set in the CPU 3 itself, and then the controller. Will be sent back to (5).
한편, 컨트롤러(5)는 상기 비교된 압력값에 의해 펌핑관(16)의 일측에 설치된 포텐쇼미터(4)의 저항값을 물체의 이동에 따라서 변화시켜가면서 원하는 압력을 유지시킬 수 있도록 한다.On the other hand, the controller 5 can maintain the desired pressure while changing the resistance value of the potentiometer 4 installed on one side of the pumping pipe 16 according to the movement of the object by the compared pressure value.
즉, 콘트롤러(5)의 신호를 받아 포텐쇼미터(4)가 작동하면서 펌핑관(16)의 유로상에 설치된 스로틀밸브(17)의 회전량을 조절하게 되고, 상기 스로틀밸브의 회전량에 따라 챔버(1)내의 가스가 펌핑관(16)의 안내를 받아 적당량 만큼 펌핑되므로써 상기 챔버(1)내의 압력이 조절되는 것이다.That is, the potentiometer 4 operates in response to the signal from the controller 5 to adjust the rotation amount of the throttle valve 17 installed on the flow path of the pumping tube 16, and according to the rotation amount of the throttle valve, The pressure in the chamber 1 is controlled by the gas in 1) being pumped by an appropriate amount by the guidance of the pumping pipe 16.
그러나 이와 같은 종래 압력조절장치는 스로틀밸브 자체가 원판형이며 한 개만을 사용하고 있기 때문에 미세한 압력조절이 어려워 고진공도가 요구 되는 반도체공정에서의 압력조절에 많은 문제점이 있었다.However, such a conventional pressure regulator has a lot of problems in the pressure control in the semiconductor process is difficult to fine pressure because the throttle valve itself is a disc-shaped and using only one.
본 고안은 이와같은 문제점을 감안하여 안출한 것으로, 한쌍의 사각판으로 된 스로틀밸브에 의해 기체(가스)의 흐름을 부드럽게 행할 수 있도록 하여 고진공도에서의 미세압력조절이 가능하게 하는데 그 목적이 있다.The present invention has been made in view of the above-mentioned problems, and its purpose is to enable a smooth flow of gas (gas) by means of a pair of square plate throttle valves to enable fine pressure control at high vacuum levels. .
상기 목적을 달성하기 위하여 본 고안 진공시스템의 압력조절장치가 제공되는바, 이를 일실시예로 도시한 첨부된 도면 제3도 내지 제4도를 참고로 하여 더욱 상세히 설명하면 다음과 같다.In order to achieve the above object, a pressure regulating device of a vacuum system of the present invention is provided, which will be described in more detail with reference to FIGS. 3 to 4 of the accompanying drawings.
첨부도면 제3도는 본 고안 압력제어장치를 갖는 진공시스템의 전체구성도로서, 챔버(1)의 하방에 사각형상을 갖는 펌핑관(6)을 연결하고 상기 펌핑관의 유로상에는 사각판형으로된 한쌍의 스로틀밸브(7)(7a)를 회전가능하도록 직렬로 설치하여 포텐쇼미터(4)의 작동에 따라 상기 스로틀밸브(7)(7a)가 각 힌지축(8a)(8b)을 중심으로 회전될 수 있도록 한다.FIG. 3 is an overall configuration diagram of a vacuum system having a pressure control device of the present invention, in which a pumping pipe 6 having a rectangular shape is connected to a lower side of the chamber 1, and a pair of square plates is formed on the flow path of the pumping pipe. The throttle valves 7 and 7a are rotatably installed in series so that the throttle valves 7 and 7a can be rotated about the hinge shafts 8a and 8b according to the operation of the potentiometer 4. Make sure
이 때, 상, 하 스로틀밸브(7)(7a)는 최대한 개방되거나 닫힌 상태에서, 각 밸브의 면과 면이 서로 교차하도록 어긋나게 설치된다.At this time, the upper and lower throttle valves (7) (7a) are provided to be shifted so that the surface and the surface of each valve to cross each other in the open or closed state as possible.
즉, 상부측 스로틀밸브(7)의 힌지축(8a)과 하부측 스로틀밸브(7a)의 힌지축(8a)은 펌핑관(3)의 서로 다른 모서리에 설치된다.That is, the hinge shaft 8a of the upper throttle valve 7 and the hinge shaft 8a of the lower throttle valve 7a are provided at different corners of the pumping pipe 3.
이와같이 구성된 본 고안의 작용중 종래에서 설명된 작용은 중복을 피하기 위해 생략하기로 하고 본 고안에 관련된 부분의 작용만을 설명하기로 한다.Among the operations of the present invention configured as described above, the operations described in the related art will be omitted to avoid duplication, and only the operations of the parts related to the present invention will be described.
사각형상을 갖는 펌핑관(6)의 일측에 설치된 포텐쇼미터(4)가 콘트롤러(5) 의 신호를 받아 작동하면서 상기 펌핑관(6)의 유로에 설치된 상, 하 한쌍 의 스로틀밸브(7)(7a)를 각각 일정각도 만큼 회전시키므로, 챔버(1) 내의 기체(가스)는 펌핑관(6)을 통해 유동시 상기 스로틀밸브(7)(7a)들의 안내를 받으면서 유동하여 펌펑된다.A potentiometer 4 installed on one side of the pumping tube 6 having a quadrangular shape is operated by receiving a signal from the controller 5, and a pair of upper and lower throttle valves 7 and 7a provided in the flow path of the pumping tube 6 are provided. ) Rotate each by a predetermined angle, the gas (gas) in the chamber (1) is flowed and pumped while being guided by the throttle valve (7) (7a) when flowing through the pumping pipe (6).
즉, 포텐쇼미터(4)의 작동에 따라 회전되는 한쌍의 스로틀밸브(7)(7a)는 힌 지축(8a)(8b)이 각각 서로 다른 모서리에 설치되어 있기 때문에, 상기 스로틀밸브(7)(7a)는 회전시 첨부도면 제 4도에 도시된 바와 같이 서로 교차 되는 형태를 이루게 되어 있으므로, 상기 각 스로틀밸브(7)(7a) 사이의 유로를 통해 기체가 부드럽게 빠져나가게 된다.That is, the pair of throttle valves 7 and 7a rotated according to the operation of the potentiometer 4 are provided with hinge shafts 8a and 8b respectively provided at different corners, and therefore, the throttle valves 7 and 7a. In the rotation, as shown in FIG. 4 of the accompanying drawings, since they cross each other, the gas is smoothly escaped through the flow path between the throttle valves 7 and 7a.
만약, 스로틀밸브(7)(7a)의 상하부 힌지축이 동일한 모서리에 설치되어 있을 경우에는 기체가 스로틀밸브 사이의 유로를 통해 부드럽게 빠져나가기가 힘 들어진다.If the upper and lower hinge shafts of the throttle valves 7 and 7a are provided at the same corners, it is difficult for the gas to escape smoothly through the flow path between the throttle valves.
이상에서와 같이, 본 고안은 스로틀밸브(7)(7a)가 사각판 형상으로 되어 있고 개방시에는 서로 교차하는 방향으로 회.전하게 되며, 챔버(1)내의 기체는 상기 스로틀밸브(7)(7a)를 통해 부드럽게 흘러 펌핑되므로 고진공도에서의 미세한 압력까지도 조절이 가능하게 되는 효과가 있다..As described above, the present invention is the throttle valve (7) (7a) is in the shape of a square plate and rotates in the direction crossing each other when opened, the gas in the chamber (1) is the throttle valve (7) ( 7a) flows smoothly through the pump, so it is possible to control even the minute pressure at high vacuum.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019920000283U KR0129922Y1 (en) | 1992-01-11 | 1992-01-11 | Apparatus for adjusting pressure of a vacuum system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019920000283U KR0129922Y1 (en) | 1992-01-11 | 1992-01-11 | Apparatus for adjusting pressure of a vacuum system |
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| Publication Number | Publication Date |
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| KR930018758U KR930018758U (en) | 1993-08-21 |
| KR0129922Y1 true KR0129922Y1 (en) | 1999-02-01 |
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| KR2019920000283U KR0129922Y1 (en) | 1992-01-11 | 1992-01-11 | Apparatus for adjusting pressure of a vacuum system |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100678453B1 (en) * | 2000-07-10 | 2007-02-05 | 삼성전자주식회사 | Vacuum Device |
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1992
- 1992-01-11 KR KR2019920000283U patent/KR0129922Y1/en not_active IP Right Cessation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100678453B1 (en) * | 2000-07-10 | 2007-02-05 | 삼성전자주식회사 | Vacuum Device |
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| KR930018758U (en) | 1993-08-21 |
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