KR0129133B1 - METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATE - Google Patents
METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATEInfo
- Publication number
- KR0129133B1 KR0129133B1 KR1019940016751A KR19940016751A KR0129133B1 KR 0129133 B1 KR0129133 B1 KR 0129133B1 KR 1019940016751 A KR1019940016751 A KR 1019940016751A KR 19940016751 A KR19940016751 A KR 19940016751A KR 0129133 B1 KR0129133 B1 KR 0129133B1
- Authority
- KR
- South Korea
- Prior art keywords
- gaas
- gaas substrate
- gas
- plasma
- gan
- Prior art date
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 239000007789 gas Substances 0.000 claims abstract description 12
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 16
- 238000004381 surface treatment Methods 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims 1
- 125000004429 atom Chemical group 0.000 abstract description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 6
- -1 GaAs compound Chemical class 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 1
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 1
- 229960002415 trichloroethylene Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
제1도는 본 발명에서 이용하는 암모니아 플라즈마 공정을 위한 장치의 개략도.1 is a schematic diagram of an apparatus for an ammonia plasma process used in the present invention.
제2도는 본 발명에 의한 GaAs 기판의 표면처리상태를 도시한 단면도.2 is a cross-sectional view showing a surface treatment state of a GaAs substrate according to the present invention.
제3도는 본 발명에 의해 표면 처리된 GaAs 기판을 이용한 MOS 구조의 단면도이다.3 is a cross-sectional view of a MOS structure using a GaAs substrate surface treated according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : GaAs기판 12 : 열판10: GaAs substrate 12: hot plate
14 : NH4가스 16 : 플라즈마 전력 공급기14 NH 4 gas 16 plasma power supply
20 : GaN층 30 : 부도체20: GaN layer 30: insulator
40 : 금속40: metal
본 발명은 GaAs 화합물 반도체의 표면 처리방법에 관한 것으로서, 특히 암모니아 플라즈마 공정을 이용하여 GaAs 화합물 반도체 표면의 표면 전하 상태를 불활성화하기 위한 GaAs 기판의 표면 처리방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment method of a GaAs compound semiconductor, and more particularly, to a surface treatment method of a GaAs substrate for deactivating a surface charge state of a surface of a GaAs compound semiconductor using an ammonia plasma process.
GaAs 화합물 반도체는 Si반도체에 비해 전자의 이동도가 훨씬 높으며, 광 특성을 갖고 있기 때문에 고속의 광전소자, 광 통신용 광원 및 센서 등의 분야에 이용되고 있다.GaAs compound semiconductors are much higher in electron mobility than Si semiconductors and have optical properties, and thus are used in fields such as high-speed photoelectric devices, light sources and sensors for optical communication.
Si반도체가 보유하고 있지 않은 상술한 특성을 갖고 있음에도 불구하고 갈륨비소 화합물 반도체가 전자소자로의 응용 개발에 부진한 주 요인은 GaAs의 표면 전하의 상태밀도가 매우 높기 때문이다. 이로 인해 표면의 여러가지 전기적 특성을 외부의 전장으로 제어하기가 매우 어렵다.Despite the above-described characteristics that Si semiconductors do not possess, the main reason for gallium arsenide compound semiconductors for application development to electronic devices is that the state density of GaAs surface charge is very high. Because of this, it is very difficult to control various electrical characteristics of the surface with an external electric field.
최근, 이러한 표면전하 상태밀도를 줄이기 위하여, 다시 말해 표면 전하상태를 불활성화 시키기 위하여 여러가지 표면처리 방법들이 연구되고 있으며, 현재의 기술로 가능한 GaAs의 단위 체적당 불순물의 농도 한계치는 대략 1012/㎝2정도에 머물고 있는 실정이다.Recently, various surface treatment methods have been studied to reduce the surface charge state density, that is, to deactivate the surface charge state, and the limit of the concentration of impurities per unit volume of GaAs with current technology is approximately 10 12 / cm. The situation is staying at about two .
본 발명의 목적은 GaAs의 표면 전하상태 밀도를 줄이고 표면을 불활성화 시킴과 동시에 재현성 있는 GaAs 기판의 표면 처리방법을 제공하는데 있다. 상기 목적을 달성하기 위한 본 발명의 표면 처리방법은 세정 처리된 GaAs 기판이 들어 있는 고진공 상태의 소정 챔버내에 NH3가스를 넣은 후, 이 NH3가스를 플라즈마 생성으로 이온화시켜 여기된(exicited) 질소 원자를 형성시키는 단계와; 상기 GaAs 기판을 As이온이 활성화될 수 있을 정도의 온도로 가열하여 GaAs 표면에 GaN를 형성시키는 단계로 이루어지는 것을 특징으로 한다. 또한, 본 발명은 PECVD(Plasma Enhanced Chemical Vapor Deposition) 방법을 플라즈마 생성방법으로 이용한다.SUMMARY OF THE INVENTION An object of the present invention is to reduce the surface charge state density of GaAs, to inactivate the surface, and to provide a surface treatment method of a reproducible GaAs substrate. In order to achieve the above object, the surface treatment method of the present invention is a nitrogen-excited by placing NH 3 gas into a predetermined chamber in a high vacuum state containing a cleaned GaAs substrate and ionizing the NH 3 gas by plasma generation. Forming an atom; The GaAs substrate is heated to a temperature at which the As ion can be activated, thereby forming GaN on the GaAs surface. In addition, the present invention uses a Plasma Enhanced Chemical Vapor Deposition (PECVD) method as a plasma generation method.
이하, 본 발명의 바람직한 실시예를 첨부도면을 참조하여 상세히 설명한다. 본 발명의 암모니아 플라즈마 공정을 이용한 GaAs 표면 처리방법은 제1도에 도시한 PECVD 장치의 챔버(chamber) 내에서 이루어진다. 먼저, GaAs 기판(10)을 하기와 같은 방법으로 세정 처리한다. 삼염화 에틸렌(Trichloretylene), 아세톤, 메탄을 순으로 소정 온도에서 약 5분동안 세척한 후, 웨이퍼 표면의 자연산화막을 제거하기 위하여 NH4OH : H2O2: H2O 용액에서 30초 동안 에칭한다. 이어, NH4OH : H2O 용액에서 약 15초 동안 처리한 후, 탈이온수를 흘려주며 세척 후 건조시킨다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The GaAs surface treatment method using the ammonia plasma process of this invention is performed in the chamber of the PECVD apparatus shown in FIG. First, the GaAs substrate 10 is cleaned in the following manner. Ethylene trichloride, acetone, and methane were washed in order at a predetermined temperature for about 5 minutes, and then etched in NH 4 OH: H 2 O 2 : H 2 O solution for 30 seconds to remove the native oxide film on the wafer surface. do. Subsequently, after treatment for about 15 seconds in a NH 4 OH: H 2 O solution, washed with deionized water and dried after washing.
상술한 처리과정을 통하여 세정 처리된 GaAs 기판(10)을 챔버내의 히터가 장착된 작업대(12) 위에 올려 넣고, 진공 펌프를 통하여 약 10-8Torr 이하의 고진공 상태로 만든다. 고진공 상태의 챔버내에 암모니아 가스(14)를 흘려준다. 이 때, 상기 암모니아 가스(14)를 약 800 mTorr∼1 Torr 정도의 부분압으로 챔버를 채우게 한다. 그 이유는 후술될 것이다. 그리고, 고주파 플라즈마 전력 공급기(16)로 플라즈마를 생성시킨다. 고진공 상태의 플라즈마 생성으로 상기 암모니아 가스들(14)은 이온화 되어 (H)2와 (N)2들이 생성된다. 여기서, (H)2는 수소 원자의 여기된(excited) 상태를 말한다. (N)2역시 NH3가스를 플라즈마로 이온화시키는 과정에서 생성되는 질소 원자의 여기된 상태를 나타낸다. 이러한 상태에서, 상기 작업대(12)의 히타를 가열하여 상기 GaAs 기판(10)의 온도를 약 500℃ 이상으로 급속 가열한 후, 일정시간 이 온도를 유지시키면, 제2도에 도시한 바와 같이, GaAs 기판(10) 표면에 밴드 갭이 큰 얇은 GaN층(20)이 형성된다. 즉, 본 발명의 암모니아 플라즈마를 이용한 표면 처리방법은 GaAs를 500℃ 이상의 온도로 가열할 때, GaAs의 표면으로부터 As원자가 빠져 나오는 현상을 이용하고, 이 상황에서 여기된 질소 원자(N)2를 이용하여 As이 빠져 나온 자리를 N원자로 치환하여 GaN를 GaAs표면에 얇게 형성시키는 것이다. 따라서, GaAs의 표면 전하상태는 불활성화 됨과 동시에, 실제 소자 제작시 만들어지는 GaAs의 표면은 GaAs의 내부로 이동된다. 즉, 제2도에 도시한 바와 같이, GaN층(20)과 GaAs 기판(10)의 계면이 GaAs의 표면이 되는 것이다. 이 때, 상기 As이 빠져나온 자리를 질소 원자로 용이하게 치환시키기 위하여, 상술한 800 mTorr에서 1 Torr 정도의 NH3가스의 플라즈마 상태의 분압을 이용한다.The GaAs substrate 10 cleaned by the above-described process is placed on the work bench 12 equipped with a heater in the chamber, and a high vacuum state of about 10 -8 Torr or less is made through a vacuum pump. Ammonia gas 14 is flowed into the chamber in a high vacuum state. At this time, the chamber is filled with the ammonia gas 14 at a partial pressure of about 800 mTorr to 1 Torr. The reason will be described later. Then, the high frequency plasma power supply 16 generates plasma. The high-vacuum plasma generation causes the ammonia gases 14 to be ionized to produce (H) 2 and (N) 2 . Here, (H) 2 refers to the excited state of a hydrogen atom. (N) 2 also represents the excited state of the nitrogen atom generated in the process of ionizing the NH 3 gas into plasma. In this state, when the heater of the work table 12 is heated to rapidly heat the temperature of the GaAs substrate 10 to about 500 ° C. or more, and then maintain this temperature for a predetermined time, as shown in FIG. 2, A thin GaN layer 20 having a large band gap is formed on the surface of the GaAs substrate 10. That is, the surface treatment method using the ammonia plasma of the present invention utilizes a phenomenon in which As atoms escape from the surface of GaAs when heating GaAs to a temperature of 500 ° C. or higher, and uses nitrogen atoms (N) 2 excited in this situation. As a result, As escapes from the N atom, the GaN is thinly formed on the GaAs surface. Therefore, the surface charge state of GaAs is inactivated, and at the same time, the surface of GaAs made during the fabrication of the device is moved into GaAs. That is, as shown in FIG. 2, the interface between the GaN layer 20 and the GaAs substrate 10 becomes a surface of GaAs. At this time, in order to easily replace the site from which As has escaped with a nitrogen atom, the partial pressure in the plasma state of NH 3 gas of about 1 Torr at 800 mTorr described above is used.
또한, NH3가스를 플라즈마로 이온화 시키는 과정에서 생성되는 (H)2는 GaAs 표면에서 공정중에 생성되는 산화물을 제거시킴으로써, 공정 후의 표면상태 밀도를 줄일 수 있다.In addition, the (H) 2 generated during the ionization of the NH 3 gas into the plasma removes the oxides generated during the process from the GaAs surface, thereby reducing the density of the surface state after the process.
제3도는 본 발명의 표면 처리방법에 의해 제작된 GaAs를 이용하여 초보적 전자소자인 금속(40)/부도체(30)/(GaN)/GaAs(10) 구조를 도시한 것으로, 종래 부도체(30)인 산화물과 GaAs(10) 계면에서 문제가 되었던 GaAs의 표면 상태(surface states)를 GaN층(20)을 이용하여 불활성화 시킴과 아울러 GaAs의 표면상태 밀도를 줄일 수 있다.FIG. 3 shows the structure of the metal 40, the insulator 30, the (GaN), and the GaAs 10, which are basic electronic devices, using GaAs fabricated by the surface treatment method of the present invention. The surface states of GaAs, which were problematic at the interface between phosphorus oxide and GaAs (10), can be inactivated by using the GaN layer 20, and the surface state density of GaAs can be reduced.
본 발명에 의해 GaAs 표면에 GaN가 형성된 경우의 표면 상태 밀도는 1010/㎠ 이하로 GaAs를 전자소자로 이용하기에 충분한 값을 갖는다.According to the present invention, the surface state density when GaN is formed on the surface of GaAs is 10 10 / cm 2 or less, which is sufficient to use GaAs as an electronic device.
이상 설명한 바와 같이 본 발명의 암모니아 플라즈마를 이용한 표면 처리방법에 의한 효과는 다음과 같다. 첫째, 처리 공정이 단순하고 재현성이 높아 범응성을 갖는다. 둘째, 공정중에 GaAs의 표면에 형성될 수 있는 자연 산화물을 제거할 수 있다. 셋째, 안정된 GaAs 표면을 얻을 수 있으며, 표면상태 밀도를 1010/㎠ 이하로 낮출 수 있다.As described above, the effects of the surface treatment method using the ammonia plasma of the present invention are as follows. First, the treatment process is simple and highly reproducible. Second, it is possible to remove natural oxides that may form on the surface of GaAs during the process. Third, a stable GaAs surface can be obtained, and the surface state density can be lowered to 10 10 / cm 2 or less.
Claims (4)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016751A KR0129133B1 (en) | 1994-07-12 | 1994-07-12 | METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940016751A KR0129133B1 (en) | 1994-07-12 | 1994-07-12 | METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATE |
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| Publication Number | Publication Date |
|---|---|
| KR960005821A KR960005821A (en) | 1996-02-23 |
| KR0129133B1 true KR0129133B1 (en) | 1998-04-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940016751A KR0129133B1 (en) | 1994-07-12 | 1994-07-12 | METHOD FOR PROCESSING SURFACE OF GaAs SUBSTRATE |
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| KR (1) | KR0129133B1 (en) |
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1994
- 1994-07-12 KR KR1019940016751A patent/KR0129133B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960005821A (en) | 1996-02-23 |
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