KR0127787B1 - Nonvolatile semiconductor mem0ry device having electrically and collectively erasable characteristics - Google Patents
Nonvolatile semiconductor mem0ry device having electrically and collectively erasable characteristicsInfo
- Publication number
- KR0127787B1 KR0127787B1 KR96004708A KR19960004708A KR0127787B1 KR 0127787 B1 KR0127787 B1 KR 0127787B1 KR 96004708 A KR96004708 A KR 96004708A KR 19960004708 A KR19960004708 A KR 19960004708A KR 0127787 B1 KR0127787 B1 KR 0127787B1
- Authority
- KR
- South Korea
- Prior art keywords
- mem0ry
- electrically
- nonvolatile semiconductor
- collectively erasable
- erasable characteristics
- Prior art date
Links
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP32428492A JP3347374B2 (en) | 1992-12-03 | 1992-12-03 | Decoder circuit and semiconductor memory device |
JP34948192A JP3159816B2 (en) | 1992-12-28 | 1992-12-28 | Nonvolatile semiconductor memory device |
KR1019930012076A KR960007638B1 (en) | 1992-12-03 | 1993-06-30 | Electrically and flash erasable non volatile semiconductor memory device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR0127787B1 true KR0127787B1 (en) | 1998-10-01 |
Family
ID=27340041
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR96004708A KR0127787B1 (en) | 1992-12-03 | 1996-02-26 | Nonvolatile semiconductor mem0ry device having electrically and collectively erasable characteristics |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0127787B1 (en) |
-
1996
- 1996-02-26 KR KR96004708A patent/KR0127787B1/en not_active IP Right Cessation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2264578B (en) | Nonvolatile semiconductor memory device | |
KR960000618B1 (en) | Electrically programmable and erasable non-volatile semiconductor memory device and operating method thereof | |
EP0572240A3 (en) | Nonvolatile semiconductor memory device | |
KR970005694B1 (en) | Semiconductor memory device | |
GB2226697B (en) | Electrically erasable programmable semiconductor memory device | |
KR950008480B1 (en) | Semiconductor memory device | |
GB9305127D0 (en) | Semiconductor device | |
GB9109725D0 (en) | Nonvolatile semiconductor memory device | |
GB2251123B (en) | Nonvolatile semiconductor memory device and the manufacturing method therefor | |
EP0591009A3 (en) | Semiconductor memory | |
EP0411573A3 (en) | Nonvolatile semiconductor memory device and method of operating the same | |
EP0545904A3 (en) | Nonvolatile semiconductor memory device | |
EP0585926A3 (en) | Insulated gate semiconductor device | |
EP0284724A3 (en) | Nonvolatile semiconductor memory device | |
GB9304655D0 (en) | Semiconductor memory device | |
EP0182595A3 (en) | Semiconductor nonvolatile memory device | |
EP0572026A3 (en) | Semiconductor memory device. | |
EP0419260A3 (en) | Electrically erasable and programmable non-volatile semiconductor memory device | |
EP0573003A3 (en) | Non-volatile semiconductor memory device. | |
KR970006537B1 (en) | Semiconductor device | |
EP0408368A3 (en) | Semi-conductor non-volatile memory device | |
EP0598400A3 (en) | Semiconductor memory device. | |
EP0443515A3 (en) | Nonvolatile semiconductor device | |
EP0387889A3 (en) | Nonvolatile semiconductor memory | |
EP0286121A3 (en) | Nonvolatile semiconductor memory device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20081010 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |