KR0124563B1 - Method of amorphous silicon evaporation - Google Patents
Method of amorphous silicon evaporationInfo
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- KR0124563B1 KR0124563B1 KR1019890002273A KR890002273A KR0124563B1 KR 0124563 B1 KR0124563 B1 KR 0124563B1 KR 1019890002273 A KR1019890002273 A KR 1019890002273A KR 890002273 A KR890002273 A KR 890002273A KR 0124563 B1 KR0124563 B1 KR 0124563B1
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- reactor
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- amorphous silicon
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title abstract description 15
- 230000008020 evaporation Effects 0.000 title 1
- 238000001704 evaporation Methods 0.000 title 1
- 239000007789 gas Substances 0.000 claims abstract description 60
- 238000000151 deposition Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 9
- 239000008096 xylene Substances 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 7
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 4
- 239000012495 reaction gas Substances 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 238000005137 deposition process Methods 0.000 claims 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 abstract description 7
- 235000012431 wafers Nutrition 0.000 description 13
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
제1도는 종래의 3-존 저압 화학기상 장치도.1 is a conventional three-zone low pressure chemical vapor apparatus diagram.
제2도는 본 발명에 따른 3-존 저압 화학기상 장치도.2 is a three-zone low pressure chemical vapor apparatus according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 3-존 반응로 2 : 웨이퍼1: 3-zone reactor 2: wafer
3a, 3b : 기체용기 4 : 기체인젝터3a, 3b: gas container 4: gas injector
5 : 반응로 도어 6 : 압력계5: reactor door 6: pressure gauge
7a, 7b : 유량조절기 8 : 후면 사일렌 기체 주입라인7a, 7b: flow regulator 8: rear xylene gas injection line
9 : 진공 펌프 라인 10 : 진공 펌프9: vacuum pump line 10: vacuum pump
11 : 인젝터 구멍 12 : 기체 주입구11 injector hole 12 gas inlet
a∼d : 밸브a to d: valve
본 발명은 반도체 소자의 게이트나 상호 연결된 물질로 사용되는 비정질 실리콘의 증착방법에 관한 것으로, 특히, 튜브형태의 길이가 긴 반응로에서 대량의 웨이퍼 위에 두께가 균일하고 불순입자가 없는 비정질 실리콘을 증착시킬 수 있도록 원료기체 인입구에서 반응 부산물 기체 배출구까지의 반응 용기 길이 방향으로 온도 구배를 주어 인젝터의 사용을 제거하고 원료 기체 사용량을 줄이도록 한 비정질 실리콘의 증착방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of depositing amorphous silicon used as a gate or interconnect material of a semiconductor device, and in particular, deposits amorphous silicon without uniform particles on a large number of wafers in a tube-type long reactor. The present invention relates to a method of depositing amorphous silicon to reduce the use of injectors and to reduce the use of injectors by giving a temperature gradient in the length direction of the reaction vessel from the source gas inlet to the reaction by-product gas outlet.
종래의 비정질 실리콘 증착기술은 다결정 실리콘의 저압화학 기상 증착 기술과 동일하되 증착온도만 차이가 있으므로 여기서는 다결정 실리콘 증착기술을 그대로 설명하기로 한다.The conventional amorphous silicon deposition technique is the same as the low pressure chemical vapor deposition technique of polycrystalline silicon, but only the deposition temperature is different, so the polycrystalline silicon deposition technique will be described here.
튜브형태의 3-존(Zone) 반응로(1)의 입구쪽에 압력계(6)가 달린 반응로 도어(5)가 부착되고 반응로(1)의 하부에 적당한 간격으로 구멍(11)이 뚫린 기체 인젝터(4)가 설치되며 인젝터(4) 상부에 다량의 웨이퍼(2)가 설치되고 반응로(1) 외부의 질소 및 사일렌 용기(3a, 3b)는 밸브(a, b)를 통하여 유량조절기(7a, 7b)와 연결되고 유량조절기(7a, 7b)는 직접 반응로 도어(5)로 연결됨과 동시에 밸브(d)를 통하여는 반응로 도어(5)로 연결되고 밸브(d)를 통하여는 반응로(1)의 후면부로 연결되며, 진공펌프(10)는 진공펌프 라인(9)을 통하여 반응로 후면부로 연결된다.Reactor door 5 having a pressure gauge 6 attached to the inlet of the 3-zone reactor 1 in the form of a tube, and a gas having holes 11 drilled at appropriate intervals in the lower part of the reactor 1. The injector 4 is installed, and a large amount of wafers 2 are installed on the injector 4, and the nitrogen and xylene containers 3a and 3b outside the reactor 1 are flow rate regulators through the valves a and b. (7a, 7b) and the flow regulators (7a, 7b) are directly connected to the reactor door (5), at the same time through the valve (d) to the reactor door (5) and through the valve (d) It is connected to the rear of the reactor (1), the
상기와 같은 장치에서 다량의 웨이퍼(2)위에 실리콘을 증착시킬 때 약 570°정도의 온도를 반응로 길이방향으로 존(Zone)에 관계없이 일정하게 유지시키며 사일렌용기(3b)의 사일렌(SiH4) 기체를 분당 약 200SCCM내외로 투입하되 석영관에 적당한 간격으로 구멍(11)이 뚫린 기체 인젝터(4)를 이용하여 균일하게 분사시킨다.When depositing silicon on a large amount of wafer 2 in the above apparatus, the temperature of about 570 ° is kept constant regardless of the zone in the longitudinal direction of the reactor, SiH 4 ) gas is injected into and out of about 200 SCCM per minute, and is uniformly sprayed using a gas injector 4 having holes 11 drilled into the quartz tube at appropriate intervals.
비정질 실리콘 증착반응 전후의 반응로(1)내의 분위기 및 온도조절방식은 일반적인 저압 화학 기상 증착 방식과 동일하다.The atmosphere and temperature control method in the reactor 1 before and after the amorphous silicon deposition reaction is the same as the general low pressure chemical vapor deposition method.
사일렌 기체(SiH4)를 원료로 약 300∼450mTorr정도의 압력에서 비정질 실리콘을 얻으려면 증착반응 온도가 570∼590°이하이어야 하며 이 온도보다 늦으면 점차 결정화된 실리콘을 얻게 된다.In order to obtain amorphous silicon at a pressure of about 300 to 450 mTorr as a raw material of xylene gas (SiH 4 ), the deposition reaction temperature must be 570 to 590 ° or less, and later crystallized silicon is gradually obtained.
원래 다결정 실리콘 증착시(증착온도 : 600℃이상)에서 3-존(Zone) 반응로의 각 존(Zone)의 온도가 다르면 보다 고온에서 성장시킨 다결정 실리콘의 결정립 크기가 더 커지므로 온도가 균일해야 함은 불가피하다.When the temperature of each zone of 3-zone reactor is different at the time of polycrystalline silicon deposition (deposition temperature: 600 ℃ or higher), the grain size of polycrystalline silicon grown at higher temperature becomes larger, so the temperature should be uniform. It is inevitable.
그러므로 원료 기체 주입방법에서 일방향 흐름은 불가하고 인젝터를 이용한 균일분사 방식을 줄 수 밖에 없었다.Therefore, the one-way flow is impossible in the raw material gas injection method, and the uniform injection method using the injector is inevitably given.
그런데 비정질 실리콘을 저압 화학 기상 증착시킬 때는 증착 온도차이에 따라 결정립 크기 문제가 전혀 없는데도 불구하고 온도 균일 증착 방식을 고수하여 왔었다. 570°정도의 온도에서 비정질 실리콘 박막의 성장속도는 약 50±5Å/min이다.However, when low-pressure chemical vapor deposition of amorphous silicon, the temperature uniform deposition method has been adhered to even though there is no grain size problem according to the deposition temperature difference. The growth rate of the amorphous silicon thin film at a temperature of about 570 ° is about 50 ± 5 Å / min.
종래 기술의 동작상태를 설명하면, 웨이퍼(2)를 반응용기(1)내에 삽입시킨 후 진공펌프(10)를 이용하여 10∼20mTorr정도의 저압 혹은 약간의 질소(N2)기체를 불어 넣어 20mTorr정도의 압력 하에서 3-존(Zone)의 온도를 550∼590℃ 사이의 것으로 하여 ±1℃변화 범위내에서 균일하도록 조절한다.Referring to the operation state of the prior art, the wafer 2 is inserted into the reaction vessel 1, and then a low pressure or a small amount of nitrogen (N 2 ) gas of about 10 to 20 mTorr is blown using the
온도조절이 끝난후 질소(N2)를 차단하고 유량 조절기(7b)를 통과하면서 약 200SCCM(Standard cc/min) 정도의 유입 속도가 유지되는 사일렌(SiH4) 기체를 기체 인젝터(4)를 통하여 반응로(1)내에서 균일하게 분사시켜 웨이퍼(2)위로 실리콘을 증착시킨다.For four days alkylene (SiH 4) gas injector 4, the gas blocks the nitrogen (N 2) flow through the flow regulator (7b) the flow rate of about 200SCCM (Standard cc / min) while maintaining after the temperature control over By uniformly spraying in the reactor (1) through to deposit the silicon on the wafer (2).
증착이 완료되면 사일렌 기체의 밸브(b)를 차단하고 진공펌프(10)만 가동하여 잔류기체를 제거한다.When the deposition is completed, the valve (b) of the silylene gas is blocked and only the
잔류기체를 완전히 제거하기 위해 질소(N2)기체를 불어넣는 퍼징(Purging)을 수차례 반복할 수 있다. 잔류기체 제거가 완료되면 진공펌프라인(9)을 차단하고 질소 기체만 불어넣어 대기압화시킨다.Purging with blowing nitrogen (N 2 ) gas may be repeated several times to completely remove residual gas. When the removal of residual gas is completed, the vacuum pump line 9 is shut off, and only nitrogen gas is blown to atmospheric pressure.
다음 반응로 도어(5)를 열고 실리콘이 성장된 웨이퍼를 꺼내면 모든 과정이 완료된다.Then open the reactor door (5) and take out the silicon-grown wafer to complete the process.
그런데 종래에는 반응로(1)의 3-존(Zone)을 모두 같은 온도로 유지시키면서 비정질 실리콘을 증착시키므로 일방향 기체흐름 방식에 의해서는 후면부의 기체 고갈로 인해 실리콘 박막 성장 속도가 감소되기 때문에 불가피하게 기체 인젝터(4)를 사용해 왔음에도 불구하고 원료 기체(사일렌 기체)주입속도에 무관하게 후면부 성장 속도는 여전히 낮아 전체 기체 주입량의 약 25% 정도를 후면 주입라인(8)으로 유입시켜야 했는데 이는 성장 속도 균일화에는 도움을 주지만 기체 추돌류(Turbulent Flow)를 일으켜 박막에 반응 불순물입자(particles)가 형성되는 문제가 있었다.However, in the related art, since amorphous silicon is deposited while maintaining all three zones of the reactor 1 at the same temperature, the silicon thin film growth rate is inevitably reduced due to gas depletion at the rear side by the one-way gas flow method. Despite the use of the gas injector (4), the rear growth rate was still low, regardless of the feed rate of the raw gas (silylene gas), and about 25% of the total gas injection had to be introduced into the rear injection line (8). Although helpful in speed uniformity, there was a problem in that reactive impurity particles were formed in the thin film by causing gas flow (Turbulent Flow).
또한 반응로를 한번 세척한 후 진행할 수 있는 공정 횟수가 약 50회 정도인데 비해 기체 인젝터는 20회 정도 진행후에 세척을 해주어야 하므로 장비의 다운 타임(Down Time)을 증가시킬 뿐 아니라 기체 인젝터(4)를 통해 기체분사를 하기 위해서는 기체 주입량을 기체 인젝터를 쓰지 않은 일방향 흐름 방식의 기체 주입량보다 늘려야 하는데 이로인해 반응로 내의 압력 증가는 실리콘 박막의 성장속도를 약간 증가시키기는 하나 웨이퍼 내의 두께 균일도 감소 및 기체 상태 반응에 의해 반응입자 생성등의 문제점이 있었다.In addition, since the number of processes that can be performed after washing the reactor once is about 50 times, the gas injector needs to be cleaned after 20 times, thus increasing down time of the equipment as well as gas injector (4). In order to inject the gas through the gas, the gas injection rate should be increased than the one-way flow gas injection without the gas injector. Thus, the increase in pressure in the reactor may slightly increase the growth rate of the silicon thin film, but decrease the thickness uniformity and the gas There was a problem such as reaction particle generation due to the state reaction.
본 발명은 상기의 문제점을 해결하기 위한 것으로 첨부도면을 참조하여 상세히 설명하면 다음과 같다.The present invention to solve the above problems will be described in detail with reference to the accompanying drawings.
제2도에서 온도 구배 3-존 저압화학 기상장치의 구성을 보면, 3-존(Zone) 반응로(1)내에 다량의 웨이퍼(2)가 설치되고 3-존 반응로(1) 입구쪽에 압력계(6)가 달린 반응로 도어(5)가 설치되며 3-존 반응로(1)의 하단부에는 반응로 도어(5)에 부착되는 기체 주입구(12)가 설치되고 반응로(1)외부에 있는 질소 및 실리콘 용기(3a, 3b)의 기체는 밸브(a, b)를 통하여 기체유량 조절기(7a, 7b)를 거쳐 반응로 도어(5)로 인가되며 진공펌프(10)는 진공펌프라인(9)를 통하여 반응로 후면부에 연결된다.Referring to the configuration of the temperature gradient three-zone low pressure chemical vapor device in FIG. 2, a large amount of wafers 2 are installed in the three-zone reactor 1 and a pressure gauge at the inlet of the three-zone reactor 1 A reactor door 5 with (6) is installed and a gas inlet 12 attached to the reactor door 5 is installed at the lower end of the three-zone reactor 1 and located outside the reactor 1. Gases of the nitrogen and silicon vessels 3a and 3b are applied to the reactor door 5 through the gas flow regulators 7a and 7b through the valves a and b and the
상기와 같은 3-존 저압 화학 기상장치에 있어서의 3-존(Zone) 수평 반응로(1)내에서 저압 화학 기상증착 방법에 의해 비정질 실리콘을 증착시키는데 있어 존(Zone) 1의 온도(T1)를 550℃±10℃·존(Zone) 2의 온도(T2)를 565℃±10℃ 존(Zone) 3의 온도(T3)를 580℃±10℃로 조절하고 원료 사일렌 기체(SiH4)는 기체 인젝터 사용없이 반응로 도어(5)쪽 기체라인만을 통해 주입하여 반응로(1)내에서, 인입부에서 배출부까지 일방향으로 흐르도록 한다.The temperature of zone 1 (T 1 ) in depositing amorphous silicon by low pressure chemical vapor deposition in a three-zone horizontal reactor 1 in a three-zone low pressure chemical vapor deposition apparatus as described above. ), The temperature (T 2 ) of 550 ° C. ± 10 ° C. and Zone 2 is adjusted to 565 ° C. ± 10 ° C., and the temperature (T 3 ) of Zone 3 is adjusted to 580 ° C. ± 10 ° C. SiH 4 ) is injected through the gas line toward the reactor door 5 without using a gas injector to flow in one direction from the inlet to the outlet in the reactor 1.
이때 기체 주입속도는 140±20SCCM 정도로 하며 반응시의 압력은 250∼390mTorr이다. 이외에는 반응로의 하드웨어 및 소프트웨어 구성은 종래와 동일하다. 증착과 동시에 인(P)이 도핑되는 비정질 실리콘 증착에 있어서도 온도 구배를 갖는 3-존(Zone) 반응로를 이용할 수 있다.이 경우 질소(N2) 아르곤(Ar) 및 사일렌(SiH4) 기체에 희석된 포스핀(PH3) 기체와 순수한 사일렌 기체가 희석된 포스핀 기체만 인젝터로 주입시킬 수 있다.At this time, the gas injection speed is about 140 ± 20SCCM and the pressure during the reaction is 250 ~ 390mTorr. Otherwise, the hardware and software configuration of the reactor are the same as before. A 3-zone reactor with a temperature gradient can also be used for amorphous silicon deposition doped with phosphorus (P) simultaneously with deposition. In this case, nitrogen (N 2 ) argon (Ar) and xylene (SiH 4 ) Only phosphine (PH 3 ) gas diluted with gas and phosphine gas diluted with pure xylene gas can be injected into the injector.
본 발명에 따른 3-존(Zone) 저압 화학기상장치의 동작방법을 설명하면 다음과 같다.Referring to the operation method of the three-zone (Zone) low pressure chemical vapor apparatus according to the present invention.
각 존(Zone)마다 독립적인 온도 조절 시스템에 의해 ±1℃범위 오차로 존 1의 온도(T1)는 550℃±10℃, 존 2의 온도(T2)는 565±10℃, 존 3의 온도(T3)는 580±10℃로 조절한다. (T1＜T2＜T3)온도조절이 끝난 후 원료 사일렌 기체(SiH4)를 증착시에 기체 주입구(12)를 통해 약120∼160SCCM(±2SCCM)정도의 유입속도로 주입하여 존1→존2→존3 방향으로 일방향 흐름이 일어나면서 웨이프(2) 위로 비정질 실리콘이 증착된다.Zone 1's temperature (T 1 ) is 550 ° C ± 10 ° C, zone 2's temperature (T 2 ) is 565 ± 10 ° C and zone 3 with ± 1 ° C range error by independent temperature control system for each zone. The temperature (T 3 ) of is adjusted to 580 ± 10 ℃. After the temperature control (T 1 <T 2 <T 3 ), the raw material xylene gas (SiH 4 ) is injected through the gas inlet 12 at the inflow rate of about 120 to 160 SCCM (± 2 SCCM) during deposition. One-way flow occurs in the direction of 1? Zone 2? Zone 3 and amorphous silicon is deposited on the wafer 2.
증착시간이 완료되면 원료 사일렌 기체를 차단하고 진공펌프(10)를 가동한 뒤 질소(N2) 기체를 불어넣어 잔류 반응 생성기체를 제거한다. 잔류 기체 제거가 완료되면 진공펌퍼 라인(9)을 차단하고 질소기체만 불어넣어 대기압화시킨후 반응로 도어(5)를 열고 실리콘이 성장된 웨이퍼를 꺼내면 모든 과정이 완료된다.When the deposition time is completed, the raw material xylene gas is cut off, the
본 발명은 비정질 실리콘 박막의 성장 속도는 분당 40Å이상이 되므로 종래의 성장속도 50±50Å/min에 비교될 만하고 증착 박막을 임의 시간동안 열처리(950℃, 질소주입)했을 때 결정화된 실리콘의 결정립 크기는 종래의 결정립 크기(2500Å)와 같으며 특히 로딩존(Zone)에 관계없이 결정리 성장속도가 균일하고 전체 웨이퍼 위에 비정질 실리콘 박막의 두께를 균일하게 유지하면서도 반응압력을 인젝터 사용시보다 약 50∼70mTorr 정도 감소시킬 수 있어 입자 발생 문제를 상당히 개선하고, 또 반응로 세척 주기에 비해 주기가 짧은 인젝터 세척 과정이 없으므로 장비의 다운타임이 줄어들고, 웨이퍼간의 두께 균일도의 증가로 1회 공정에 비정질 실리콘을 입힐 수 있는 웨이퍼 수를 약 25장 정도 높일 수 있으며 일방향 기체 흐름으로 추돌류를 억제하여 입자 발생문제를 감소시키는 효과가 있다.In the present invention, the growth rate of the amorphous silicon thin film is more than 40 kW / min, which is comparable to the conventional growth rate of 50 ± 50 kW / min. Is the same as the conventional grain size (2500Å), especially the crystal growth rate is uniform regardless of the loading zone, while maintaining the thickness of the amorphous silicon thin film uniformly on the entire wafer, the reaction pressure is about 50 to 70mTorr than when using the injector. Significantly improves particle generation problems and eliminates injector cleaning processes that are shorter than reactor cleaning cycles, reducing equipment downtime and increasing thickness uniformity between wafers resulting in amorphous silicon in one process The number of wafers that can be used can be increased by about 25 sheets and particles are generated by suppressing colliding flows with a unidirectional gas flow. It has the effect of reducing the problem.
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