KR0120733B1 - Method for tin strip of copper film circuit on print circuit board - Google Patents
Method for tin strip of copper film circuit on print circuit boardInfo
- Publication number
- KR0120733B1 KR0120733B1 KR1019940027524A KR19940027524A KR0120733B1 KR 0120733 B1 KR0120733 B1 KR 0120733B1 KR 1019940027524 A KR1019940027524 A KR 1019940027524A KR 19940027524 A KR19940027524 A KR 19940027524A KR 0120733 B1 KR0120733 B1 KR 0120733B1
- Authority
- KR
- South Korea
- Prior art keywords
- tin
- circuit board
- mixture
- copper foil
- flaking
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
본 발명은 프린트기판(PCB:인쇄회로기판) 상에 동박으로 회로를 형성하고 동박 회로면상에 Tin(주석) 등을 코팅한 것에 있어서, 상기 코팅된 Tin 및 Tin 합금을 안전하고 용이하게 박리할 수 있도록 한 Tin박리방법에 관한 것이다. 일반적으로 프린트기판 제조 공정시 프린트기판상에 부품이나 전기소자를 삽입 설치하기 위한 구멍들을 형성하고, 이 구멍들에 설치되는 부품 및 소자들을 통전시키기 위해 화학적인 동도금을 형성하며 이 공정을 PTH 공정이라 한다.The present invention is to form a circuit with a copper foil on a printed circuit board (PCB: printed circuit board) and to coat the tin (tin), etc. on the copper foil circuit surface, it is possible to safely and easily peel off the coated Tin and Tin alloy. It is about tin peeling method. Generally, in the process of manufacturing a printed board, holes are formed to insert and install components or electric elements on the printed board, and chemical copper plating is formed to energize the parts and devices installed in the holes. This process is called a PTH process. .
상기 PTH 공정후에는 기판상에 회로를 형성하기 위하여 감광성의 검식필름(Dry-Film)을 코팅하고 사진학적인 감광과 현상을 실시하여 필요한 회로를 형성하며, 상기 구멍내벽과 회로를 보강하기 위하여 전기적 방법으로 대략 25㎛ 정도의 동도금을 하고, 동도금후에 상기 회로를 보호하기 위해 10㎛ 정도의 주석(Tin)이나 주석합금(Tin-lead)을 도금하며, 상기 건식필름을 박리하고 이 건식필름에 의해 보호되고 있던 동박면의 동박을 화학적으로 제거하며, 상기 주석(Tin) 및 주석합금(Tin-lead)이 이 공정에서 상기 회로를 약품으로부터 보호하게 된다.After the PTH process, to form a circuit on a substrate, a photosensitive dry film (Dry-Film) is coated and photographic photosensitization and development are carried out to form a necessary circuit. Copper plating of about 25㎛, plated with tin or tin-lead of about 10㎛ in order to protect the circuit after copper plating, peeling off the dry film and protected by the dry film Chemically removing the copper foil on the copper foil surface, the tin (Tin) and tin alloy (Tin-lead) to protect the circuit from chemicals in this process.
상기 공정후에 동으로만 되는 회로를 형성하기 위하여 약품으로부터 보호기능을 하던 주석(Tin)이나 주석합금을 박리하게 되며, 이를 제거하기 위하여 여러 화학약품을 혼합한 제품을 이용하게 된다. 상기와 같이 주석이나 주석합금을 박리하기 위한 종래의 것들은 붕불산을 포함한 불화물과 과산화수소를 기초로 하는 것과, 질산을 기초로 한 것이 있었으나, 상기 붕불산을 포함한 불화물을 기초로 한 것의 경우는 온도 및 금속의 용해량이 급상승하게 됨에 따라 과산화수소의 분해가 촉진되므로 이 과산화수소의 관리가 매우 어렵게 되었고, 함유한 불화물이 유리재를 침식하므로 유리섬유로 강화된 프린트기판 자체가 손상될 염려가 있었으며, 또한 수율이 질산을 기초로 한 것보다 낮고 슬럿지를 많이 생성시키게 되어 폐수처리에 어려움을 갖게 되는 문제점이 있었다.After the process, in order to form a circuit consisting only of copper, the tin (Tin) or tin alloy which was used as a protective function from the chemicals was peeled off, and in order to remove this, a mixture of various chemicals was used. As mentioned above, the conventional ones for stripping tin or tin alloys are based on fluoride and hydrogen peroxide, including boric acid, and based on nitric acid. However, in the case of those based on fluoride including boric acid, temperature and As the dissolved amount of metal increases rapidly, the decomposition of hydrogen peroxide is promoted, which makes it very difficult to manage hydrogen peroxide, and because the fluoride contained erodes the glass material, the printed substrate reinforced with glass fiber may be damaged. Lower than nitric acid-based sludge produced a lot of problems in the waste water treatment had a problem.
또, 상기 질산을 기초로 하는 것은 주석과 동사이의 금속간 화합물을 박리시키기 위하여 질산염(Fe(NO3)3), 염화물(Fecl3), 니트로 아로메틱(Nitro-Aromatic) 화합물등을 사용하고 있었으며, 이는 동박에서 주석 등을 박리하는 효과가 있는 반면, 상기 질산이 동박회로에까지 침투되어 동박부분을 부식시키게 되고, 또 박리된 부분이 불규칙하게 되며, 동박표면을 매끄럽지 못하고 불규칙하게 하므로 프린트기판상의 회로 형상이 불량하게 되는 문제점을 지니고 있었다. 본 발명은 상기와 같은 제반 문제점을 감안하여 안출한 것으로 기존의 질산을 기초로 하는 박리제에 질산 제이철(Fe(NO3)3)과 기타 화합물을 혼합하여 동박의 부식을 억제하면서 상기 주석등을 용이하게 박리하고, 암모늄이온을 포함하지 않으므로서 폐수처리가 용이하도록 한 것인바, 이를 이하에서 실시예에 의거 상세히 설명하면 다음과 같다.In addition, based on the nitric acid, nitrate (Fe (NO 3 ) 3 ), chloride (Fecl 3 ), nitro-aromatic compounds, etc., were used to exfoliate the intermetallic compound of tin and verbi. This has the effect of peeling tin and the like from the copper foil, while the nitric acid penetrates into the copper foil circuit to corrode the copper foil portion, and the peeled portion becomes irregular and the surface of the copper foil is not smooth or irregular, so the circuit on the printed board It had a problem that the shape is poor. The present invention has been made in view of the above-mentioned problems, and the tin and the like are easily mixed with ferric nitrate (Fe (NO 3 ) 3 ) and other compounds by mixing with a conventional nitric acid-based release agent. It is to be peeled off, so that it does not contain ammonium ions to facilitate the wastewater treatment, which will be described in detail below based on the examples.
[실시예]EXAMPLE
(1) 본 발명 실시예에 사용되는 질산은 60% HNO3로부터 68% HNO3에 이르기까지 모든 농도 범위의 질산을 사용할 수 있으나, 제조시 타약품에 대한 충격을 줄이기 위하여 가능한 낮은 농도의 질산을 사용하는 것이 바람직하며, 질산의 사용량은 전체 무게비로 30%-50%(60% HNO3)의 범위로 할 수 있다.(1) The nitric acid used in the examples of the present invention may use nitric acid in all concentration ranges ranging from 60% HNO 3 to 68% HNO 3 , but in order to reduce the impact on other drugs during manufacture, use nitric acid at the lowest possible concentration. Preferably, the amount of nitric acid used may be in the range of 30% -50% (60% HNO 3 ) by the total weight ratio.
(2) 금속간 화합물을 박리하기 위해 사용되는 질산철(Ferric Nitrate)은 무수물과 9수물(Fe(NO3)3,9H2O)모두를 사용할 수 있으나, 9수율을 사용하는 것이 바람직하며, 사용량은 중량비(wt%)로1.5wt%에서 포화용액의 범위이다.(2) Ferric nitrate used to peel the intermetallic compound may use both anhydride and hydride (Fe (NO 3 ) 3 , 9H 2 O), but it is preferable to use 9 yield. The amount used is in the range of 1.5 wt% to saturated solution by weight (wt%).
(3) 질산이 동박표면을 침투하여 야기되는 동박부식문제를 완화시키기 위해 사용되는 부식억제제(Corrosion Inhibitor)는 1,2,3 Benzo)-triazole과 Tolytriazole( 1,2,3,Benzotriazole Methyl tolutriazole) 또는 위의 두 약품을 병행하여 사용하며, 사용량은 0.3wt%에서 2wt%의 범위이다.(3) Corrosion Inhibitors used to alleviate copper foil corrosion problems caused by nitric acid penetrating the copper surface are 1,2,3 Benzo) -triazole and Tolytriazole (1,2,3, Benzotriazole Methyl tolutriazole). Or use the above two drugs in parallel, the amount used is 0.3wt% to 2wt%.
(4) 박리속도의 향상과 지속성을 유지시키고 부식 억제효율을 보완하기 위하여 염소산 나트륨(NaCIO3) 또는 염소산칼륨(KCIO3), 또는 두 약품을 병행하여 사용할 수 있으며, 이들의 사용량은 0.5wt%-4wt%의 범위이다.(4) Sodium chlorate (NaCIO 3 ) or potassium chlorate (KCIO 3 ), or two drugs, can be used in parallel to maintain and maintain the peel rate and to improve the corrosion inhibition efficiency. It is in the range of -4wt%.
(5) 수세성, 약품의 침투력, 부식 억제의 성능 향상 등을 위하여 지방성 알코올 알콕시레이트(Fatty Alcohol Alkoxylate)과 선상 알콕시레이트(Linear Alcohol Alk oxylate) 또는 에틸렌산화물(Ethylene Oxide)과 프로필렌산화물(Propylene Oxide) 의 블록코폴리머(Block Copolymer) 계통의 부식 억제제겸 계면활성제를 사용하며 사용량은 0.1wt% 이내이다.(5) Fatty Alcohol Alkoxylate, Linear Alcohol Alk oxylate, Ethylene Oxide, and Propylene Oxide Corrosion inhibitors and surfactants of Block Copolymers are used within 0.1wt%.
(6) 또 수세성, 슬럿지(Sludge)의 생성억제를 보완하기 위하여 모노에탄올아민 (Mono-Ethanol Amine), 트리에탄올아민(triethanol Amine), 에틸렌디아민(Ethyle ne Diamine) 또는 이 혼합물을 사용하고 사용량은 0.3wt% 이내이다. 또, 본 발명의 박리제를 제조하기 위하여 사용되는 물은 정제된 탈이온수이며, 상기의 물질들을 혼합하여 본 발명 박리제를 제조하고, 이 제조된 박리제를 이용하여 프린트기판상의 주석(Tin ) 또는 주석합금(Tin-lead)을 용이하고 신속하게 박리시키게 되며, 이 박리공정시 프린트기판상의 동박으로 된 회로는 손상되지 않도록 하고, 폐수 처리가 용이하게 되는 특징을 지닌 것으로 상기 본 발명의 실시예에 의한 표는 다음과 같다.(6) Mono-Ethanol Amine, triethanol Amine, Ethyle ne Diamine, or mixtures thereof are used to compensate for the flushing and sludge production inhibition. It is within 0.3wt%. In addition, the water used to prepare the release agent of the present invention is purified deionized water, by mixing the above materials to prepare the release agent of the present invention, using the prepared release agent (Tin) or tin alloy on a printed board (Tin-lead) can be easily and quickly peeled off, the circuit of the copper foil on the printed circuit board is not damaged during this peeling process, and the waste water treatment is easy to be characterized in the table according to the embodiment of the present invention Is as follows.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027524A KR0120733B1 (en) | 1994-10-26 | 1994-10-26 | Method for tin strip of copper film circuit on print circuit board |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940027524A KR0120733B1 (en) | 1994-10-26 | 1994-10-26 | Method for tin strip of copper film circuit on print circuit board |
Publications (2)
Publication Number | Publication Date |
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KR960016657A KR960016657A (en) | 1996-05-22 |
KR0120733B1 true KR0120733B1 (en) | 1997-10-23 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019940027524A KR0120733B1 (en) | 1994-10-26 | 1994-10-26 | Method for tin strip of copper film circuit on print circuit board |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100401821B1 (en) * | 2001-12-12 | 2003-10-17 | 주식회사 쎄라닉스 | the thin film circuit formation method which uses a metal chemical compound reaction |
-
1994
- 1994-10-26 KR KR1019940027524A patent/KR0120733B1/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100401821B1 (en) * | 2001-12-12 | 2003-10-17 | 주식회사 쎄라닉스 | the thin film circuit formation method which uses a metal chemical compound reaction |
Also Published As
Publication number | Publication date |
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KR960016657A (en) | 1996-05-22 |
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