KR0118865B1 - Low pressure cvd apparatus - Google Patents
Low pressure cvd apparatusInfo
- Publication number
- KR0118865B1 KR0118865B1 KR1019940000168A KR19940000168A KR0118865B1 KR 0118865 B1 KR0118865 B1 KR 0118865B1 KR 1019940000168 A KR1019940000168 A KR 1019940000168A KR 19940000168 A KR19940000168 A KR 19940000168A KR 0118865 B1 KR0118865 B1 KR 0118865B1
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- low pressure
- vapor deposition
- chemical vapor
- gas
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Abstract
Description
제1도는 종래 반도체장치의 저압 화학기상증착장치의 구조도.1 is a structural diagram of a low pressure chemical vapor deposition apparatus of a conventional semiconductor device.
제2도는 본 발명에 따른 반도체장치의 저압 화학기상증착장비의 구조도.2 is a structural diagram of a low pressure chemical vapor deposition apparatus of a semiconductor device according to the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1,2,7 : 제1내지 제3가스도입구 3 : 외부튜브1,2,7: 1st to 3rd gas inlet 3: Outer tube
4 : 내부튜브 5 : 펌핑라인4: inner tube 5: pumping line
8 : 웨이퍼 9 : 수납부8 wafer 9 storage part
본 발명은 반도체장치의 저압 화학기상증착(LPCVD)방법에 관한 것으로서, 특히 헬륨가스를 사용하여 장비 내부에서 성장하는 자연산화막의 성장을 억제토록 하는 반도체장치의 저압화학기상증착방법에 관한 것이다.The present invention relates to a low pressure chemical vapor deposition (LPCVD) method of a semiconductor device, and more particularly, to a low pressure chemical vapor deposition method of a semiconductor device for suppressing the growth of a natural oxide film grown inside a device by using helium gas.
일반적으로 반도체장치의 제조공정중 저압 화학기상증착장비를 사용하여 증착하는 막종류로는 질화막, 폴리실리콘, 열산화막 등이 있으며, 가스의 반응을 촉진시키기 위하여 약500-900℃의 고온을 사용한다.In general, the types of films deposited using low pressure chemical vapor deposition equipment during the manufacturing process of semiconductor devices include nitride films, polysilicon, thermal oxide films, etc., and a high temperature of about 500-900 ° C. is used to promote gas reaction. .
이러한 종래 반도체장치의 저압화학기상증착장비는 제1도에 도시한 바와 같이 펌핑라인(5)과 일체로 형성된 외부튜브(3) 내측에는 내부튜브(4)가 설치되어 있고, 상기 내부튜브(4) 안측에는 다수의 웨이퍼(8)가 안치되는 수납부(9)가 설치되며, 상기 내부 튜브(4) 하측에는 제1 및 제2가스도입구(1)(2)가 연결되어 있다.In the conventional low pressure chemical vapor deposition apparatus of the semiconductor device, as shown in FIG. 1, an inner tube 4 is installed inside the outer tube 3 formed integrally with the pumping line 5, and the inner tube 4 The inner side is provided with an accommodating portion 9 in which a plurality of wafers 8 are placed. The first and second gas inlets 1 and 2 are connected to the lower side of the inner tube 4.
상기와 같이 이루어진 종래 반도체장치의 저압 화학기상증착 장치를 사용하여 저압 화학기상증착 필름을 형성하는 과정을 살펴보면, 먼저 수납부(9)에 웨이퍼(8)를 안치시키면 수납부(9)가 내부튜브(4) 안으로 상승된 후 외,내부 튜브(3)(4) 안을 저압상태로 만든 다음 제1 및 제2가스도입구(1)(2)를 통해 반응가스를 유입시킴으로서 튜브 내부에서 웨이퍼(8) 표면에 저압 화학기상증착으로 이루어지는 필름이 형성된다.Looking at the process of forming a low-pressure chemical vapor deposition film using a low-pressure chemical vapor deposition device of the conventional semiconductor device made as described above, first, when the wafer 8 is placed in the receiving portion 9, the receiving portion 9 is the inner tube (4) After rising into the inner and outer tubes (3) and (4) in a low pressure state by introducing the reaction gas through the first and second gas inlet (1) (2) wafer (8) inside the tube (8) A film formed by low pressure chemical vapor deposition is formed on the surface.
한편 웨이퍼(8) 표면에 필름증착이 완료되면 외, 내부튜브(3)(4)를 대기압 상태로 만든 후 수납부(9)가 튜브 내에서 소정위치까지 하강하게 되고, 하강완료 되면 수납부(9)에 안치된 웨이퍼(8)를 유출시킴으로서 저압 화학기상증착을 완료하게 된다. 상기와 같은 종래 저압 화학기상증착 방법은, 웨이퍼가 안치된 수납부가 튜브내로 상승될때 튜브내의 잔존하는 산소가스가 높은 온도에 의해 웨이퍼의 실리콘(S1)이 노출된 표면에서 반응하여 자연산화막이 성장하게 되며, 이러한 자연산화막의 성장으로 반도체 웨이퍼의 실리콘 표면과 접촉되는 배선이 개방되는 불량이 발생할 뿐만 아니라 캐패시터 절연막으로 사용되는 질화막의 전기 축전능력이 저하되는 문제점이 발생하게 된다.On the other hand, when film deposition is completed on the surface of the wafer 8, the inner tube 3 and 4 are made at atmospheric pressure, and then the housing 9 is lowered to a predetermined position in the tube. The low pressure chemical vapor deposition is completed by flowing out the wafer 8 placed in 9). In the conventional low pressure chemical vapor deposition method, the oxygen oxide remaining in the tube reacts on the surface where silicon (S 1 ) of the wafer is exposed by the high temperature when the receiving portion in which the wafer is placed is raised into the tube, thereby growing a natural oxide film. As a result of the growth of the natural oxide film, not only the defect of opening the wiring in contact with the silicon surface of the semiconductor wafer is caused, but also the problem of lowering the electrical storage capability of the nitride film used as the capacitor insulating film.
본 발명은 상기와 같은 문제점을 해소하기 위해 종래 저압 화학기상증착장비의 튜브내에 불활성가스를 유입시킬 수 있는 배관을 설치하고, 웨이퍼상에 저압 화학기상증착으로 필름을 형성하기 위해 웨이퍼가 안치된 수납부가 상승되기 전에 상기 튜브내부에 불활성 가스를 유입시켜 잔존하는 산소를 제거함으로서 웨이퍼가 수납부에 안치되어 튜브내부로 상승시 자연적으로 성장하는 산화막을 억제시킴에 따라 불량률을 감소시키고, 축전능력의 감소를 방지할 수 있도록 하는 반도체장치의 저압 화학기상증착 방법을 제공하는데 본 발명의 목적이 있는 것이다.The present invention is installed to the pipe of the inert gas into the tube of the conventional low pressure chemical vapor deposition equipment in order to solve the above problems, and the wafer is placed on the wafer to form a film by low pressure chemical vapor deposition on the wafer Inert gas is introduced into the tube to remove the remaining oxygen before the portion is raised, thereby reducing the defective rate by reducing the oxide film that naturally grows when the wafer is placed in the housing and ascending into the tube. It is an object of the present invention to provide a low-pressure chemical vapor deposition method of a semiconductor device that can be prevented.
본 발명은 외부튜브, 내부튜브, 상기 내부튜브 하단면에 반응가스를 공급하기 위한 반응가스도입구, 반응가스를 배출하기 위한 펌핑라인, 웨이퍼를 안착시키는 수납부를 구비한 저압 화학기상증착 장비를 사용하여 웨이퍼에 필름을 형성하는 저압 화학기상증착 방법에 있어서, 상기 외부튜브 하단부에 가스도입구를 추가 설치하여 헬륨 가스를 내부튜브 내로 공급함으로서 잔존하는 산소 가스를 제거하여 웨이퍼에 자연산화막이 형성되는 것을 억제시키도록 한 것을 특징으로 한다.The present invention uses a low pressure chemical vapor deposition apparatus having an outer tube, an inner tube, a reaction gas inlet for supplying a reaction gas to a lower surface of the inner tube, a pumping line for discharging the reaction gas, and a receiving part for seating a wafer. In the low-pressure chemical vapor deposition method of forming a film on the wafer, a gas inlet is further provided at the lower end of the outer tube to supply helium gas into the inner tube to remove the remaining oxygen gas to form a natural oxide film on the wafer. It is characterized by suppressing.
이하 첨부된 도면에 의해 상세히 설명하면 다음과 같다.Hereinafter, described in detail by the accompanying drawings as follows.
제2도는 본 발명에 따른 반도체장치의 저압 화학기상증착 장비의 구조도로서, 펌핑라인(5)과 일체로 형성된 외부튜브(3) 내측에는 내부튜브(4)가 설치되어 있고, 상기 내부튜브(4) 안측에는 다수의 웨이퍼(8)가 안치되는 수납부(9)가 설치되며, 상기 내부튜브(4) 하측에는 제1 및 제2가스도입구(1)(2)가 연결됨과 동시에 튜브 내부에 존재하는 잔류산소를 제거하기 위한 불활성 가스를 주입하는 제3가스 도입구(3)가 설치되어 있다.2 is a structural diagram of a low pressure chemical vapor deposition apparatus of a semiconductor device according to the present invention, wherein an inner tube 4 is installed inside an outer tube 3 formed integrally with a pumping line 5, and the inner tube 4 is disposed. ) The inner side is provided with an accommodating part 9 in which a plurality of wafers 8 are placed, and the first and second gas inlets 1 and 2 are connected to the lower side of the inner tube 4 and inside the tube. A third gas inlet 3 for injecting an inert gas for removing residual oxygen present is provided.
상기와 같이 이루어진 본 발명에 따른 반도체장치의 저압 화학기상증착 장비를 사용하여 저압 화학기상증착 필름을 형성하는 과정을 살펴보면, 먼저 수납부(9)에 웨이퍼(8)를 안치시키면 수납부(9)가 내부튜브(4) 안으로 상승된 후 외, 내부 튜브(3)(4) 안을 저압상태로 만든 다음 제1 및 제2가스도입구(1)(2)를 통해 반응가스를 유입시킴으로서 튜브 내부에서 웨이퍼(8)표면에 저압 화학기상증착으로 이루어지는 필름이 형성된다. 한편 웨이퍼(8)표면에 필름증착이 완료되면 외, 내부튜브(3)(4)를 대기압 상태로 만든 후 수납부(9)가 튜브내에서 소정위치까지 하강하게 되고, 하강완료 되면 수납부(9)에 안치된 웨이퍼(8)를 유출시킴으로서 저압 화학기상증착을 완료하게 된다.Looking at the process of forming a low-pressure chemical vapor deposition film using the low-pressure chemical vapor deposition equipment of the semiconductor device according to the present invention made as described above, first placing the wafer 8 in the receiving portion (9) the receiving portion (9) Is raised into the inner tube (4), and then, inside the inner tube (3) (4) to a low pressure state and then inside the tube by introducing a reaction gas through the first and second gas inlet (1) (2) On the surface of the wafer 8, a film of low pressure chemical vapor deposition is formed. On the other hand, when film deposition is completed on the surface of the wafer 8, the inner tube 3 and 4 are made at atmospheric pressure, and then the receiving portion 9 is lowered to a predetermined position in the tube. The low pressure chemical vapor deposition is completed by flowing out the wafer 8 placed in 9).
이후 불활성가스인 헬륨(He)을 제3가스 도입구(7)를 통하여 튜브(3)(4) 내부로 유입시켜 상기 튜브 내부에 잔존하는 산소가스를 제거한다.Thereafter, helium (He), which is an inert gas, is introduced into the tubes 3 and 4 through the third gas inlet 7 to remove oxygen gas remaining in the tubes.
즉 불활성 가스중 분자량이 가장 적은 헬륨가스를 튜브 내부로 유입시키면 상기 헬륨가스는 산소가스보다 가벼운 관계로 튜브의 상층부로 이동하여 모이게 됨으로서 점차 튜브내의 헬륨가스 분위기가 되면서 산소가스는 튜브 밖으로 밀려나가게 된다. 그 다음 다른 웨이퍼를 수납부(9)에 안치 후 상기 수납부(9)를 튜브내부로 상승시키면 헬륨가스에 의해 튜브내부에는 산소가스가 잔류하지 않게 됨으로서 웨이퍼(8) 표면에 노출된 실리콘은 산소와 반응을 하지 않아 자연산화막이 억제되는 것이며, 이후의 과정은 전술한 바와 같은 과정을 반복실행하게 되는 것이다.That is, when helium gas having the lowest molecular weight among inert gases is introduced into the tube, the helium gas is moved to the upper layer of the tube because it is lighter than oxygen gas, and the oxygen is pushed out of the tube while gradually becoming the helium gas atmosphere in the tube. . Then, when another wafer is placed in the housing 9 and the housing 9 is raised inside the tube, oxygen gas does not remain in the tube due to helium gas, so that the silicon exposed on the surface of the wafer 8 is oxygen. Natural oxide film is suppressed because it does not react with, and the subsequent process is to repeat the process as described above.
이상에서 상술한 바와 같이 본 발명은 저압 화학기상증착 장비의 튜브내에 불활성가스를 유입시킬 수 있는 배관을 설치하고, 웨이퍼상에 저압 화학기상증착으로 필름을 형성하기 위해 웨이퍼가 안치된 수납부가 상승되기 전에 상기 튜브내부에 불활성 가스를 유입시켜 잔존하는 산소를 제거함으로서 웨이퍼가 수납부에 안치되어 튜브내부로 상승시 자연적으로 성장하는 산화막을 억제시킴에 따라 불량률을 감소시키고, 축전용량을 증가할 수 있는 것이다.As described above, the present invention provides a pipe for introducing an inert gas into the tube of the low pressure chemical vapor deposition apparatus, and the receiving portion on which the wafer is placed to raise the film to form a film by low pressure chemical vapor deposition on the wafer is raised. By removing the remaining oxygen by introducing an inert gas into the tube before the wafer is placed in the receiving portion to reduce the defective rate and increase the storage capacity by inhibiting the oxide film which naturally grows when rising into the tube. will be.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940000168A KR0118865B1 (en) | 1994-01-16 | 1994-01-16 | Low pressure cvd apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940000168A KR0118865B1 (en) | 1994-01-16 | 1994-01-16 | Low pressure cvd apparatus |
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| KR950024255A KR950024255A (en) | 1995-08-21 |
| KR0118865B1 true KR0118865B1 (en) | 1997-09-30 |
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| KR1019940000168A KR0118865B1 (en) | 1994-01-16 | 1994-01-16 | Low pressure cvd apparatus |
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