KR0118362Y1 - Wafer treatment bath of semiconductor device - Google Patents

Wafer treatment bath of semiconductor device

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Publication number
KR0118362Y1
KR0118362Y1 KR2019940032660U KR19940032660U KR0118362Y1 KR 0118362 Y1 KR0118362 Y1 KR 0118362Y1 KR 2019940032660 U KR2019940032660 U KR 2019940032660U KR 19940032660 U KR19940032660 U KR 19940032660U KR 0118362 Y1 KR0118362 Y1 KR 0118362Y1
Authority
KR
South Korea
Prior art keywords
wafer
processing tank
semiconductor device
chemical
carrier
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Application number
KR2019940032660U
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Korean (ko)
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KR960025344U (en
Inventor
조창섭
Original Assignee
문정환
엘지반도체 주식회사
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Priority to KR2019940032660U priority Critical patent/KR0118362Y1/en
Publication of KR960025344U publication Critical patent/KR960025344U/en
Application granted granted Critical
Publication of KR0118362Y1 publication Critical patent/KR0118362Y1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

Abstract

본 발명에 의한 웨이퍼 처리조는 웨이퍼 처리용 화학약품을 받아들이기 위한 인입구와 배출하기 위한 배출구가 형성된 용기형태의 처리조몸체와, 처리조몸체의 저면에 부착되어 웨이퍼캐리어에 세워져서 적재되는 다수의 웨이퍼의 가장자리와 접촉하면서 웨이퍼를 움직이게하는 롤러를 포함하여 이루어져서, 웨이퍼가 계속적으로 움직이면서 화학처리되도록 한다.According to the present invention, a wafer processing tank includes a container-shaped processing tank body having an inlet for receiving a chemical for wafer processing and an outlet for discharging a wafer, and a plurality of wafers attached to the bottom of the processing body to stand on a wafer carrier. It comprises a roller that moves the wafer while in contact with the edge of the wafer, allowing the wafer to continue to be chemically processed.

Description

반도체 장치의 웨이퍼 처리조.Wafer processing tank of a semiconductor device.

제 1 도는 종래의 반도체 장치의 웨이퍼 처리조를 설명하기 위한 도면으로,1 is a view for explaining a wafer processing tank of a conventional semiconductor device,

제 1 도의 (a)는 종래의 웨이퍼 처리조의 정단면을 도시한 도면.1A is a view showing a front end surface of a conventional wafer processing tank.

제 1 도의 (b)는 제 1 도의 (a)의 I-I 단면을 도시한 도면.(B) of FIG. 1 shows an I-I cross section of (a) of FIG.

제 2 도는 본 고안에 의한 반도체 장치의 웨이퍼 처리조의 정단면을 도시한 도면.2 is a front sectional view of the wafer processing tank of the semiconductor device according to the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

10.20. 웨이퍼 처리조11.21. 처리조몸체10.20. Wafer Processing Tank 11.21. Treatment tank

12.22. 배출구13.23. 인입구12.22. Outlet 13.23. Entrance

14.24. 웨이퍼캐리어14-1. 고정홈14.24. Wafer Carrier 14-1. Fixing groove

15.25. 웨이퍼26. 롤러15.25. Wafer 26. roller

본 고안은 반도체 장치의 웨이퍼 처리조(wafer bath)에 관한 것으로, 특히 실리콘(silicon) 웨이퍼의 화학적 반응을 향상시키기에 적당하도록 한 반도체 장치의 웨이퍼 화학 처리조에 관한 것이다.TECHNICAL FIELD The present invention relates to a wafer bath of a semiconductor device, and more particularly, to a wafer chemistry bath of a semiconductor device adapted to be suitable for improving the chemical reaction of a silicon wafer.

반도체 제조공정중에는 웨이퍼의 화학처리공정이 많은 부분일 차지하고 있으며, 그 중에서 웨이퍼를 처리조의 화학용액에 담구어서 처리하는 디핑(dipping)방식의 화학처리공정이 많이 실시되고 있다.In the semiconductor manufacturing process, a large portion of the wafer chemical treatment process takes place, and among them, a dipping chemical treatment process in which a wafer is immersed in a chemical solution of a treatment tank and processed.

제 1 도는 종래의 반도체 장치의 웨이퍼 처리조를 설명하기 위한 도면으로, 제 1 도의 (a)는 종래의 웨이퍼 처리조의 정단면을 도시한 도면이고, 제 1 도의 (b)는 제 1 도의 (a)의 I-I 단면을 도시한 도면이다.FIG. 1 is a view for explaining a wafer processing tank of a conventional semiconductor device. FIG. 1 (a) is a view showing a front cross section of a conventional wafer processing tank, and FIG. 1 (b) is a diagram of FIG. Is a cross-sectional view of II).

이하 첨부된 도면을 참고하여 종래의 반도체 장치의 웨이퍼 처리조의 구성을 설명하면 다음과 같다.Hereinafter, a configuration of a wafer processing tank of a conventional semiconductor device will be described with reference to the accompanying drawings.

종래의 웨이퍼 처리조(10)는 제 1 도의 (a)와 같이, 웨이퍼와 반응을 끝낸 화학약품을 배출하기 위한 배출구(12)과, 화학약품을 순환시키기 위해서 인입시키는 인입구(13)이 하단에 형성되어 있는 처리조몸체(11)로 이루어진다.The wafer processing tank 10 of the related art has a discharge port 12 for discharging the chemical finished reaction with the wafer as shown in FIG. 1A, and an inlet 13 for retracting the chemical to circulate at the lower end thereof. It consists of the treatment tank body 11 formed.

그리고, 웨이퍼(15)는 제 1 도의 (b)와 같이, 웨이퍼캐리어(wafer carrier)(14)의 고정홈(14-1)에 웨이퍼(15)의 가장자리부위가 고정되면서 적재되어 있다.The wafer 15 is loaded in the fixing groove 14-1 of the wafer carrier 14 with the edge of the wafer 15 being fixed as shown in FIG. 1B.

종래의 반도체 장치의 웨이퍼 처리조를 이용하여 웨이퍼를 화학처리하기 위해서는 단순히 웨이퍼를 세워서 적재시킨 웨이퍼캐리어를 처리조몸체에 넣고, 디핑시간(dipping time)을 조정하는 방식이다. 즉, 디핑시간을 설정한 후에, 웨이퍼가 적재된 웨이퍼캐리어를 웨이퍼 처리조에 넣고, 디핑시간이 경과된 후에는 웨이퍼캐리어를 꺼내는 방식으로 실시되었다.In order to chemically process a wafer using a wafer processing tank of a conventional semiconductor device, a wafer carrier loaded with a wafer upright is simply placed in a processing tank body and a dipping time is adjusted. That is, after the dipping time was set, the wafer carrier loaded with the wafer was placed in a wafer processing tank, and after the dipping time had elapsed, the wafer carrier was removed.

그러나, 종래의 웨이퍼 처리조(10)를 이용하는 방식에서는 웨이퍼(15)와 웨이퍼를 적재시키는 웨이퍼캐리어(14)에 있어서, 웨이퍼캐리어의 고정홈(14-1)에 고정되는 웨이퍼 가장자리의 접촉부위(ⓐ 부위)에서 기포가 발생하게 되며, 이 기포는 시간이 지날수록 커지게 된다.However, in the conventional method using the wafer processing tank 10, in the wafer carrier 14 on which the wafer 15 and the wafer are loaded, the contact portion of the wafer edge fixed to the fixing groove 14-1 of the wafer carrier ( Bubbles are generated in the area ⓐ, and these bubbles become larger as time passes.

이로 인하여 웨이퍼의 화학약품에 의한 화학반응이 저하되고, 결과적으로는 웨이퍼 내에 있어서 화학반응의 균일한 분포도를 얻지 못하게 되는 문제가 발생되었다.As a result, the chemical reaction of the wafer is reduced, and as a result, there is a problem that a uniform distribution of the chemical reaction in the wafer cannot be obtained.

즉, 종래의 반도체 장치의 웨이퍼 처리조에서는 웨이퍼캐리어에 적재된 웨이퍼에서 웨이퍼캐리어와 접촉하게 되는 웨이퍼의 가장자리부위는 웨이퍼의 중앙부위에 비하여 화학적 반응이 약하게 진행되었다.That is, in the wafer processing tank of the conventional semiconductor device, the chemical reaction is weaker in the edge portion of the wafer that comes into contact with the wafer carrier in the wafer loaded on the wafer carrier.

본 발명은 이러한 문제를 해결하기 위하여 인출된 것으로, 웨이퍼 처리조의 구조를 개선하여 웨이퍼 내에 있어서 화학반응의 균일도를 향상시키는 것을 그 목적으로 한다.The present invention has been drawn to solve such a problem, and its object is to improve the structure of the wafer processing tank to improve the uniformity of chemical reactions in the wafer.

본 발명에 의한 웨이퍼 처리조는 웨이퍼 처리용 화학약품을 받아들이기 위한 인입구와 배출하기 위한 배출구가 형성된 용기형태의 처리조몸체와, 처리조몸체의 저면에 부착되어 웨이퍼캐리어에 세워져서 적재되는 다 수의 웨이퍼의 가장자리와 접촉하면서 웨이퍼를 움직이게하는 롤러를 포함하여 이루어진다.According to the present invention, a wafer processing tank has a container-shaped processing tank body having an inlet for receiving a chemical for wafer processing and an outlet for discharging a wafer, and a plurality of wafers attached to the bottom of the processing body to stand on a wafer carrier. It comprises a roller that moves the wafer while in contact with the edge of the wafer.

제 2 도는 본 고안에 의한 반도체 장치의 웨이퍼 처리조의 정단면을 도시한 도면으로, 이하 첨부된 도면을 참고로 본 고안의 반도체 장치의 웨이퍼 처리조의 구성 및 동작을 설명하면 다음과 같다.2 is a cross-sectional view of the wafer processing tank of the semiconductor device according to the present invention. Hereinafter, the configuration and operation of the wafer processing tank of the semiconductor device of the present invention will be described with reference to the accompanying drawings.

본 고안에 의한 반도체 장치의 웨이퍼 처리조(20)는 제 2 도에 도시된 바와 같이, 웨이퍼와 반응을 끝낸 화학약품의 배출을 위한 배출구(22)과, 화학약품을 인입시키는 인입구(23)이 형성된 처리조몸체(21)와, 처리조몸체의 저면에 부착되어 웨이퍼캐리어(24)에 세워져서 적재되는 다 수의 웨이퍼(25)의 가장자리와 접촉하여 웨이퍼를 움직이면서 회전하는 롤러(roller)(26)를 포함하여 이루어진다. 이때 롤러는 처리조몸체에 부착된 모터(motor)에 의해 회전구동된다.As illustrated in FIG. 2, the wafer processing tank 20 of the semiconductor device according to the present invention includes an outlet 22 for discharging a chemical finished with a wafer and an inlet 23 for introducing a chemical. A roller 26 which rotates while moving the wafer in contact with the formed treatment tank body 21 and the edges of the plurality of wafers 25 which are attached to the bottom surface of the treatment tank body and stand on the wafer carrier 24 and are stacked. ) At this time, the roller is rotated by a motor (motor) attached to the treatment tank body.

본 고안에 의한 웨이퍼 처리조에서 웨이퍼를 화학처리하기 위하여 처리 대상인 웨이퍼를 세워서 적재시킨 웨이퍼캐리어를 처리조몸체에 넣게 되면, 처리조몸체의 저면에 부착시킨 롤러에 의해서 웨이퍼의 높이는 높아지면서, 웨이퍼캐리어의 고정홈에 고정되던 웨이퍼의 가장자리가 일부 분리되고, 웨이퍼는 웨이퍼캐리어의 바닥에서 이탈하게 된다.In the wafer processing tank according to the present invention, when the wafer carrier loaded with the wafer to be processed is placed in the processing tank body in order to chemically process the wafer, the height of the wafer is increased by the roller attached to the bottom of the processing tank body. The edge of the wafer, which was fixed in the fixing groove of the wafer, is partially separated, and the wafer is separated from the bottom of the wafer carrier.

그리고, 웨이퍼가 처리조에 담겨지는 디핑시간동안 롤러가 모터에 의해서 일정 회전속도로 회전되고, 이와 접촉하는 웨이퍼도 회전에 의해 움직이게 된다. 이로 인하여 웨이퍼캐리어의 고정홈에 고정되는 웨이퍼의 접촉부위(ⓑ 부위)에서 웨이퍼 가장자리를 지속적으로 접촉되지 않게 된다.Then, the roller is rotated at a constant rotational speed by the motor during the dipping time in which the wafer is contained in the processing tank, and the wafer in contact with the wafer is moved by rotation. As a result, the wafer edge is not continuously contacted at the contact portion (ⓑ) of the wafer fixed to the fixing groove of the wafer carrier.

본 고안에 의한 반도체 장치의 웨이퍼 처리조는 웨이퍼를 웨이퍼캐리어에 고정적재시켜서 웨이퍼의 처리반응을 진행시키는 종래의 웨이퍼 처리조에 비하여, 처리조몸체의 저면에 부착되어 회전하는 롤러와 접촉하면서, 웨이퍼가 웨이퍼캐리어의 바닥과 이탈되어 움직이게 되어서, 웨이퍼에 있어서 화학반응의 균일한 분포도를 얻을 수 있게 된다.In the wafer processing tank of the semiconductor device according to the present invention, compared to a conventional wafer processing tank in which a wafer is fixedly placed on a wafer carrier to advance a wafer reaction reaction, the wafer is attached to the bottom surface of the processing tank body and comes into contact with a rotating roller, so that the wafer By moving away from the bottom of the carrier, a uniform distribution of chemical reactions in the wafer can be obtained.

Claims (1)

반도체 장치에서 웨이퍼를 처리하는 웨이퍼 처리조에 있어서,In a wafer processing tank for processing a wafer in a semiconductor device, 웨이퍼 처리용 화학약품을 받아들이기 위한 인입구와 배출하기위한 배출구가 형성된 용기형태의 처리조몸체와,A processing tank body in the form of a container having an inlet for receiving a chemical for wafer processing and an outlet for discharging, 상기 처리조몸체의 저면에 부착되어 웨이퍼캐리어에 세워져서 적재되는 다 수의 웨이퍼의 가장자리와 접촉하면서 웨이퍼를 움직이게 하는 롤러를 포함하여 이루어지는 반도체 장치의 웨이퍼 처리조.And a roller attached to the bottom of the processing tank body to move the wafer while in contact with the edges of the plurality of wafers mounted on the wafer carrier.
KR2019940032660U 1994-12-02 1994-12-02 Wafer treatment bath of semiconductor device KR0118362Y1 (en)

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KR2019940032660U KR0118362Y1 (en) 1994-12-02 1994-12-02 Wafer treatment bath of semiconductor device

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KR2019940032660U KR0118362Y1 (en) 1994-12-02 1994-12-02 Wafer treatment bath of semiconductor device

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KR960025344U KR960025344U (en) 1996-07-22
KR0118362Y1 true KR0118362Y1 (en) 1998-06-01

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