KR0118361Y1 - Ashing apparatus of semiconductor device - Google Patents

Ashing apparatus of semiconductor device

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Publication number
KR0118361Y1
KR0118361Y1 KR2019940032932U KR19940032932U KR0118361Y1 KR 0118361 Y1 KR0118361 Y1 KR 0118361Y1 KR 2019940032932 U KR2019940032932 U KR 2019940032932U KR 19940032932 U KR19940032932 U KR 19940032932U KR 0118361 Y1 KR0118361 Y1 KR 0118361Y1
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KR
South Korea
Prior art keywords
reaction tank
photoresist
semiconductor device
ozone
oxygen
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KR2019940032932U
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Korean (ko)
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KR960025345U (en
Inventor
신봉철
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문정환
엘지반도체 주식회사
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Priority to KR2019940032932U priority Critical patent/KR0118361Y1/en
Publication of KR960025345U publication Critical patent/KR960025345U/en
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Publication of KR0118361Y1 publication Critical patent/KR0118361Y1/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

본 고안에 의한 반도체 장치의 포토레지스트 제거장치는 포토레지스트가 잔재하는 다수의 웨이퍼를 적재시킨 카세트가 담겨지고, 반응액이 충만되도록 용기형태로 형성시킨 반응조와, 오존발생기에서 발생되는 오존이 주입되도록 반응조와 연결되고, 반응조 내부에 배치된 부위에는 다수의 홀을 형성시킨 주입관과, 오존발생기에 발생되어 주입관을 통하여 반응조로 주입되는 오존의 산소와 산소원자로의 분해를 촉진시키는 촉진수단을 포함하여 이루어져서, 반응조내에서 오존의 분해속도를 증가시킴으로, 포토레지시트의 제거속도를 빠르게 된다.The photoresist removing device of the semiconductor device according to the present invention includes a cassette in which a plurality of wafers in which photoresist remains, is loaded, a reaction tank formed in a container form so as to fill a reaction liquid, and ozone generated in an ozone generator is injected. A portion connected to the reactor and disposed inside the reactor includes an injection tube having a plurality of holes formed therein, and a means for promoting decomposition of oxygen and oxygen atoms of ozone generated in the ozone generator and injected into the reactor through the injection tube. By increasing the decomposition rate of ozone in the reaction tank, the removal rate of the photoresist sheet is increased.

Description

반도체 장치의 포토레지시트 제거장치Photoresist removal device of semiconductor device

제 1 도는 종래의 반도체 장치의 포토레지스트 제거장치의 측단면도를 도시한 도면.1 is a side cross-sectional view of a photoresist removing apparatus of a conventional semiconductor device.

제 2 도는 본 고안에 의한 반도체 장치의 포토레지시트 제거장치를 설명하기 위한 도면으로,2 is a view for explaining a photoresist sheet removing apparatus of a semiconductor device according to the present invention,

제 2 도의 (a)는 본 고안에 의한 반도체 장치의 포토레지스트 제거장치의 사시도2A is a perspective view of a photoresist removing device of a semiconductor device according to the present invention.

제 2 도의 (b)는 본 고안에 의한 반도체 장치의 포토레지시트 제거장치의 측단면도.Figure 2 (b) is a side cross-sectional view of the photoresist sheet removing apparatus of the semiconductor device according to the present invention.

*도면의 주요부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

10,20. 포토레지시트 제거장치11.21. 반응조10,20. Photoresist sheet removal device11.21. Reactor

12.22. 주입관12-1.22-1. 홀12.22. Injection tube 12-1.22-1. hall

23. 자외선조사부23. UV irradiation unit

본 고안은 반도체 장치의 포토레지스트(photo resist)제거장치에 관한 것으로, 특히 반도체 제조의 식각공정 후에 웨이퍼(wafer)상에 잔여하는 포토레지스트의 효율적인 제거에 적당하도록 한 반도체 제조의 포토레지스트 제거장치에 관한 것이다.The present invention relates to a photoresist removing device of a semiconductor device, and more particularly, to a photoresist removing device of semiconductor manufacturing, which is suitable for efficient removal of photoresist remaining on a wafer after an etching process of semiconductor manufacturing. It is about.

반도체 제조공정에서는 대부분이 절연물질로 형성시킨 마스트(mask)로 식각부위를 정의하고 식각공정이 진행되고 있으며, 마스크로는 포토레지스트가 일반적으로 사용되고 있다. 즉, 포토레지스트를 이용하여 웨이퍼의 표면이나, 기타 식각대상물의 표면에서 식각패턴을 정의하고, 식각을 진행시킨 후에, 포토레지스트를 제거한다.In the semiconductor manufacturing process, an etching part is defined by a mask formed mostly of an insulating material, and an etching process is performed, and photoresist is generally used as a mask. That is, an etching pattern is defined on the surface of the wafer or the surface of the other object to be etched using the photoresist, and after the etching is performed, the photoresist is removed.

제 1 도는 종래의 반도체 장치의 포토레지스트 제거장치의 측단면도를 도시한 도면으로, 이하 첨부된 도면을 참고하여 종래의 포토레지스트 제거장치의 구성 및 동작을 설명하면 다음과 같다.1 is a side cross-sectional view of a photoresist removing apparatus of a conventional semiconductor device. Hereinafter, the structure and operation of a conventional photoresist removing apparatus will be described with reference to the accompanying drawings.

종래의 반도체 장치의 포토레지스트 제거장치(10)는 제 1 도와 같이, 직각공정을 진행시킨 다수의 웨이퍼를 적재시킨 카세트(cassette)가 담겨지고, 황산(H2SO4)이 충만되도록 용기형태로 형성시킨 석영재질의 반응조(11)와, 오존발생기에서 발생되는 오존(O3)이 주입되도록 다수의 홀(hall)(12-1)을 형성시켜서 오존발생기에서 반응조의 저면으로 부착시킨 주입관(12)으로 이루어진다.The photoresist removing apparatus 10 of the conventional semiconductor device, like the first diagram, contains a cassette in which a plurality of wafers subjected to a right angle process are loaded, and is in a container form so as to be filled with sulfuric acid (H 2 SO 4 ). An injection tube 11 formed of a quartz material formed therein and a plurality of holes 12-1 are formed to inject ozone (O 3 ) generated from the ozone generator and attached to the bottom surface of the reactor in the ozone generator ( 12).

즉, 종래의 포토레지스트 제거장치에서는 황산이 충만된 반응조에 주입관의 홀을 통하여 오존을 직접 공급하여, 황산용액내에서 오존이 산소(O2)와 산소원자(O)로 분해되도록 하였으며, 이는 다시 반응조내에서 황산에 의해 카세트에 적재시킨 웨이퍼 표면에 탈리된 포토레지스트성분과 반응하여 이산화탄소(CO2)를 생성하여 포토레지스트가 제거되는 메카니즘으로 수행되었다.That is, in the conventional photoresist removal apparatus, ozone is directly supplied to the reaction tank filled with sulfuric acid through the hole of the injection tube, so that ozone is decomposed into oxygen (O 2 ) and oxygen atom (O) in the sulfuric acid solution. In addition, the reaction was performed with a photoresist component desorbed on the wafer surface loaded on the cassette by sulfuric acid to generate carbon dioxide (CO 2 ), thereby removing the photoresist.

그러나, 종래의 반도체 장치의 포토레지스트 제거장치에서는 오존발생기로부터공급되는 오존은 산성 용액인 황산용액내에서 산소와 산소원자로의 분해가 느리게 진행되었고, 오존의 분해반응에서 분해되는 산소(O2)의 농도증가로 인하여 오존의 자체 분해속도도 저하되었고, 이로 인하여 포토레지스트성분의 산화 제거가 지체되어, 반도체 제조의 생산수율이 저하되는 문제가 발생되었다.However, in the photoresist removing apparatus of the conventional semiconductor device, the ozone supplied from the ozone generator proceeds slowly to decompose oxygen and oxygen atoms in sulfuric acid solution, which is an acidic solution, and decomposes oxygen (O 2 ) which is decomposed in the decomposition reaction of ozone. As the concentration increases, the decomposition rate of ozone also decreases. As a result, oxidation and removal of the photoresist component is delayed, resulting in a problem that the production yield of semiconductor manufacturing is lowered.

본 고안은 이러한 문제를 해결하기 위하여 인출된 것으로, 포토레지스트 제거장치의 구조를 개선하여 포토레지스트의 제거속도를 향상시키는 것을 그 목적으로 한다.The present invention has been drawn to solve this problem, the object of the present invention is to improve the structure of the photoresist removing apparatus to improve the removal speed of the photoresist.

본 고안에 의한 반도체 장치의 포토레지스트 제거장치는 포토레지스트가 잔재하는 다수의 웨이퍼를 작재시킨 카세트가 담겨지고, 반응액이 충만되도록 용기형태로 형성시킨 반응조와, 오존발생기에서 발생되는 오존이 주입되도록 반응조와 연결되고, 반응조 내부에 배치된 부위에는 다수의 홀을 형성시킨 주입관과, 오존발생기에 발생되어 주입관을 통하여 반응조로 주입되는 오존의 산소와 산소원자로의 분해를 촉진시키는 촉진수단을 포함하여 이루어진다. 이하 첨부된 도면을 참고하여 본 고안에 의한 반도체 장치의 포토레지스트 제거장치의 구성 및 동작을 설명하면 다음과 같다.The photoresist removing device of the semiconductor device according to the present invention includes a cassette in which a plurality of wafers with residual photoresist are loaded, a reaction tank formed in a container shape so as to fill a reaction liquid, and ozone generated in an ozone generator. A portion connected to the reactor and disposed inside the reactor includes an injection tube having a plurality of holes formed therein, and a means for promoting decomposition of oxygen and oxygen atoms of ozone generated in the ozone generator and injected into the reactor through the injection tube. It is done by Hereinafter, the configuration and operation of a photoresist removing apparatus of a semiconductor device according to the present invention will be described with reference to the accompanying drawings.

제 2 도는 본 고안에 의한 반도체 장치의 포토레지스트 제거장치를 설명하기 위한 도면으로, 제 2 도의 (a)는 본 고안에 의한 반도체 장치의 포토레지스터 제거장치의 사시도이고, 제 2 도의 (b)는 본 고안에 의한 반도체 장치의 포토레지스트 제거장치의 측면도이다.2 is a view for explaining a photoresist removing device of a semiconductor device according to the present invention, Figure 2 (a) is a perspective view of the photoresist removal device of the semiconductor device according to the present invention, Figure 2 (b) is It is a side view of the photoresist removal apparatus of the semiconductor device by this invention.

본 고안에 의한 반도체 장치의 포토레지스트 제거장치(20)는 제 2 도의 (a)와 (b)와 같이, 포토레지스트가 잔재하는 다수의 웨이퍼를 적재시킨 카세트가 담겨지고, 황산(H2SO4)용액이 충만되도록 용기형태로 형성시킨 석영재질의 반응조(21)와, 오존발생기에 발생되는 오존이 통과되면서 산소와 산소원자로 분해되어 반응조로 주입되도록 반응조내에 배치된 부위에는 다수의 홀(22-1)을 형성시키고, 반응조내에 배치되지 않은 부위에는 자외선조사부(23)를 부착시킨 주입관(22)으로 이루어지며, 이때 자외선조사부를 부착시킨 주입관은 반응조를 둘러싸면서 반응조의 외면과 접하도록 형성되어진다.The photoresist removing apparatus 20 of the semiconductor device according to the present invention, as shown in FIGS. 2A and 2B, contains a cassette in which a plurality of wafers on which photoresist remains is loaded, and sulfuric acid (H 2 SO 4). The reaction tank 21 made of a quartz material formed in a container shape so that the solution is filled and a plurality of holes (22-) are disposed in the reaction tank 21 so as to be decomposed into oxygen and oxygen atoms and injected into the reaction tank while ozone generated in the ozone generator passes. 1) is formed, and the injection tube 22 attached to the ultraviolet irradiation unit 23 is attached to a portion which is not disposed in the reaction tank, and the injection tube attached to the ultraviolet irradiation unit is formed to contact the outer surface of the reaction tank while surrounding the reaction tank. It is done.

즉, 본 고안에 의한 반도체 장치의 포토레지스트 제거장치에서는 웨이퍼상에 잔재하는 포토레지스트의 산화력을 높이기 위하여 오존발생기에서 발생되어 주입관을 통하여 반응조에 주입되는 오존(O3)에 254㎚의 파장을 갖는 자외선을 조사하여 산소(O2)와 산소원자(O)로 분해되어 반응조에 공급되도록 한다.That is, in the photoresist removing apparatus of the semiconductor device according to the present invention, a wavelength of 254 nm is applied to ozone (O 3 ) generated by an ozone generator and injected into the reaction tank through an injection tube in order to increase the oxidation power of the photoresist remaining on the wafer. Irradiated ultraviolet rays are decomposed into oxygen (O 2 ) and oxygen atoms (O) to be supplied to the reactor.

이로 인하여, 본 고안에 의한 반도체 장치의 포토레지스트 제거장치에서는 오존이 직접 반응조로 주입되지 않고 산소와 산소원자로 분해되어 주입되므로 산성인 황산용액내에서도 분해속도가 증가되고, 따라서 웨이퍼상에 잔재하는 포토레지스트의 산화속도도 증가하게 된다. 또한, 반응조를 둘러싸면서 반응조의 외면과 접하도록 형성되어진 주입관에 부착시킨 자외선조사부에서 조사되는 자외선이 반응조에도 조사됨으로써 포토레지스트 분해반응의 활성화에너지를 낮게하여 포토레지스트의 분해반응을 촉진된다.For this reason, in the photoresist removing device of the semiconductor device according to the present invention, since ozone is injected into oxygen and oxygen atoms instead of directly injected into the reaction tank, the decomposition rate is increased even in an acidic sulfuric acid solution, and thus the photoresist remaining on the wafer. The oxidation rate of is also increased. In addition, the ultraviolet rays irradiated from the ultraviolet irradiation unit attached to the injection tube formed to contact the outer surface of the reaction vessel while surrounding the reaction vessel is also irradiated to the reaction vessel to lower the activation energy of the photoresist decomposition reaction to promote the decomposition reaction of the photoresist.

본 고안에 의한 반도체 장치의 포토레지스트 제거장치의 또 다른 실시예로, 반응조에 충만되는 황산(H2SO4) 용액내에서 254㎚ 길이의 파장을 가질 수 있는 빛을 반응조에 직접 조사함으로써 반응조에 주입되는 오존에서 산소와 산소원자로의 분해가 촉진되도록 한 광조사부를 부착시킨 반응조를 사용하여 포토레지스트이 산화 및 분해속도를 향상시킬 수 있다.In another embodiment of the device for removing a photoresist of a semiconductor device according to the present invention, in a sulfuric acid (H 2 SO 4 ) solution filled with a reaction tank, a light having a wavelength of 254 nm may be directly irradiated to the reaction tank. The photoresist can improve the oxidation and decomposition rate by using a reaction tank attached with a light irradiation part which promotes decomposition of oxygen and oxygen atoms in the injected ozone.

본 고안에 의한 반도체 장치의 포토레지스트 제거장치에서는 자외선을 조사하여 오존발생기에서 발생되는 오존의 산소와 산소원자로의 분해를 촉지시킴으로 분해속도를 빨라지게 되고, 이로 인하여 포토레지시트성분의 산화 제거속도가 향상되어서, 반도체 제조의 생상수률도 향상되게 된다.In the photoresist removing device of the semiconductor device according to the present invention, the decomposition rate is accelerated by irradiating ultraviolet rays to promote the decomposition of oxygen and oxygen atoms generated in the ozone generator, thereby increasing the oxidation removal rate of the photoresist component. As a result, the production yield of semiconductor manufacturing is also improved.

Claims (6)

반도체 장치에서 웨이퍼상에 잔재하는 포토레지스트를 제거하는 반도체 장치의 포토레지스트 제거장치에 있어서,A photoresist removing apparatus of a semiconductor device for removing photoresist remaining on a wafer in a semiconductor device, 포토레지스트가 잔재하는 다수의 웨이퍼를 적재시킨 카세트가 담겨지고, 반응액이 충만되도록 용기형태로 형성시킨 반응조와,A reaction vessel in which a cassette in which a plurality of wafers containing photoresist remains, is loaded, and formed into a container so as to fill a reaction liquid; 오존발생기에서 발생되는 오존이 주입되도록 반응조와 연결되고, 상기 반응조 내부에 배치된 부위에는 다수의 홀을 형성시킨 주입관과,An injection tube connected to a reaction tank to inject ozone generated from an ozone generator, and having a plurality of holes formed at a portion of the reaction tank; 상기 오존발생기에 발생되어 상기 주입관을 통하여 상기 반응조로 주입되는 오존의 산소와 산소원자로의 분해를 촉진시키는 촉진수단을 포함하여 이루어진 반도체 장치의 포토레지스트 제거장치.And a facilitating means for promoting decomposition of oxygen and oxygen atoms generated in said ozone generator and injected into said reactor through said injection tube. 제 1 항에 있어서,The method of claim 1, 상기 촉진수단으로는 오존발생기에 발생되는 오존이 통과되면서 산소와 산소원자로 분해되어 상기 반응조로 주입되도록 소정 파장의 자외선을 통과되는 오존에 조사하는 자외선 조사부를 상기 반응조에 배치되지 않은 부위에 부착시킨 주입관을 포함하여 이루어진 반도체 장치의 포토레지스트 제거장치.As the promoting means, an injection is made by attaching an ultraviolet irradiating part to irradiate ozone passing through ultraviolet rays having a predetermined wavelength so as to be decomposed into oxygen and oxygen atoms and injected into the reaction tank while ozone generated in the ozone generator passes. A photoresist removing device of a semiconductor device comprising a tube. 제 2 항에 있어서,The method of claim 2, 상기 주입관에 약 254㎚파장의 자외선을 조사하는 자외선조사부를 부착시키는 것을 특징으로 하는 반도체 장치의 포토레지스트 제거장치.And an ultraviolet irradiating portion for irradiating ultraviolet rays having a wavelength of about 254 nm to the injection tube. 제 2 항에 있어서,The method of claim 2, 상기 자외선조사부를 부착시킨 주입관을 상기 반응조를 둘러싸면서 반응조의 외면과 접하도록 형성시킨 것을 특징으로 하는 반도체 장치의 포토레지스트 제거장치.And an injection tube to which the ultraviolet irradiation unit is attached is formed to contact the outer surface of the reaction tank while surrounding the reaction tank. 제 1 항에 있어서,The method of claim 1, 상기 촉진수단으로는 상기 반응조에 충만되는 반응액내에서 소정 길이의 파장을 가질 수 있는 빛을 상기 반응조에 직접 조사함으로써 반응조에 주입되는 오존에서 산소와 산소원자로의 분해가 촉진되도록 한 광조사부를 부착시킨 반응조를 포함하여 이루어진 반도체 장치의 포토레지스트 제거장치.The facilitating means is provided with a light irradiating portion for accelerating the decomposition of oxygen and oxygen atoms in the ozone injected into the reaction tank by directly irradiating light having a wavelength of a predetermined length in the reaction liquid filled in the reaction tank to the reaction tank. A photoresist removing device of a semiconductor device comprising a reactor. 제 5 항에 있어서,The method of claim 5, 상기 반응조에 부착시킨 광조사부에서는 상기 반응조에 충만되는 반응액속에서 254㎚ 길이의 파장을 가질수 있는 빛을 조사하는 것을 특징으로 하는 반도체 장치의 포토레지스트 제거장치.The photoresist removing apparatus of the semiconductor device, characterized in that for irradiating light having a wavelength of 254nm length in the reaction liquid filled in the reaction tank in the light irradiation unit attached to the reaction tank.
KR2019940032932U 1994-12-06 1994-12-06 Ashing apparatus of semiconductor device KR0118361Y1 (en)

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