KR0110482Y1 - Test apparatus for electrode balance of semiconductor etching apparatus - Google Patents
Test apparatus for electrode balance of semiconductor etching apparatus Download PDFInfo
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- KR0110482Y1 KR0110482Y1 KR2019940003636U KR19940003636U KR0110482Y1 KR 0110482 Y1 KR0110482 Y1 KR 0110482Y1 KR 2019940003636 U KR2019940003636 U KR 2019940003636U KR 19940003636 U KR19940003636 U KR 19940003636U KR 0110482 Y1 KR0110482 Y1 KR 0110482Y1
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- electrode
- light receiving
- receiving element
- amplifier
- light emitting
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
-
- G—PHYSICS
- G08—SIGNALLING
- G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
- G08B21/00—Alarms responsive to a single specified undesired or abnormal condition and not otherwise provided for
- G08B21/18—Status alarms
- G08B21/182—Level alarms, e.g. alarms responsive to variables exceeding a threshold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Abstract
본 고안은 반도체용 식각장치에 있어서, 전극간의 포인트(Point)별 간격을 측정하여 전극이 특정방향으로 틀어지는 것을 사전에 검출하기 위한 전극평형 측정장치에 관한 것으로, 상부전극에 부착된 발광소자, 상기 발광소자에 대응되는 하부전극의 위치에 부착되어 상기 발광소자로부터 발산된 빛을 감지하는 수광소자, 및 상기 수광소자로부터 출력되는 신호에 따라 경보 신호를 출력하도록 하는 경보 출력 수단으로 구성된다.The present invention relates to an electrode balance measuring apparatus for detecting an electrode in advance in a specific direction by measuring a gap between electrodes in a semiconductor etching apparatus, the light emitting device attached to the upper electrode, A light receiving element attached to a position of a lower electrode corresponding to the light emitting element and configured to detect light emitted from the light emitting element, and an alarm output means for outputting an alarm signal according to a signal output from the light receiving element.
따라서 본 고안은 상부 및 하부전극의 네 개의 모서리에 설치되어 전극의 평형상태를 항상 확인할 수 있으므로 반응기를 열고 측정하는데 소모되는 시간을 절약할 수 있는 효과가 있다.Therefore, the present invention is installed at the four corners of the upper and lower electrodes can always check the equilibrium state of the electrode, there is an effect that can save the time consumed to open and measure the reactor.
Description
제1도는 종래의 전극평형 측정장치의 구성도1 is a block diagram of a conventional electrode balance measuring device
제2도는 본 고안에 의한 전극평형 측정장치의 구성도2 is a block diagram of an electrode balance measuring device according to the present invention
제3도는 본 고안이 적용된 상부 및 하부전극의 구조도3 is a structural diagram of the upper and lower electrodes to which the present invention is applied
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 호스트 콘트롤러 2 : 모터 콘트롤러1: Host Controller 2: Motor Controller
3 : 위치 스위치 4 : 브레이크3: position switch 4: brake
5 : 인코더 6 : 모터5: encoder 6: motor
7 : 증폭 및 연등 8 : 전원 공급부7: amplification and lantern 8: power supply
11 : 상부전극 12 : 하부전극11: upper electrode 12: lower electrode
13 : 배플 14 : 가스배출홀13: baffle 14: gas discharge hole
15 : 쿼츠 16 : 수굉소자15: Quartz 16: The counting element
17 : 웨이퍼 18 : 발광소자17 wafer 18 light emitting element
19 : 경보출력 회로 U1,U2 : 증폭기19: alarm output circuit U1, U2: amplifier
U3,U4 : 비교기 VR1,VR2,VR3 : 가변저항U3, U4: Comparator VR1, VR2, VR3: Variable resistor
C1,C2,C3 : 콘덴서 D1 : 다이오드C1, C2, C3: Capacitor D1: Diode
ZD1 : 제너 다이오드 R1 ∼ R2 : 저항ZD1: Zener Diodes R1 to R2: Resistance
본 고안은 반도체용 식각장치의 전극평형 측장장치에 관한 것으로, 특히 전극간의 포인트(Point)별 간격을 측정하여 전극이 특정방향으로 틀어지는 것을 사전에 검출하기 위한 전극평형 측정장치에 관한 것이다.The present invention relates to an electrode balance measuring device of an etching apparatus for semiconductors, and more particularly, to an electrode balance measuring device for detecting an electrode in advance in a specific direction by measuring an interval between points between electrodes.
일반적으로 단위 웨이퍼 반도체 소자 식각장치(Single Etch Sustem)는 전극간의 스텝핑 모터(Stepting Motor)의 스텝수를 모니터하여 전극간 즉 애노우드와 캐소우드간의 거리를 수치화 하는데, 실제 전극의 틀어짐에 대한 정보는 웨이퍼상의 식각속도에 대한 균일성을 역추적하여 얻을 수 있으므로, 단지 전극의 틀어짐 가능성만을 가지고 식각이 이루어지는 반응기를 열어 거리측정 도구로 전극간의 균일성을 측정하였다.In general, a single wafer semiconductor device etcher monitors the number of steps of a stepping motor between electrodes and quantifies the distance between electrodes, that is, between the anode and the cathode. Since the uniformity with respect to the etching rate on the wafer can be obtained by backtracking, the reactor in which etching is performed only with the possibility of the electrode being distorted was opened, and the uniformity between the electrodes was measured by a distance measuring tool.
제1도는 종래의 전극평형 측정장치의 구성도이다. 종래의 전극평형 측정장치는 제1도에 도시한 바와 같이 호스트 콘트롤러(1)에 모터 콘트롤러(2)를 연결하고, 모터 콘트롤러(2)에 위치 스위치(3)와 브레이크(4)를 연결하고, 전원 공급부(8)에 증폭 및 연동부(7)에 모터(6)를 연결하고, 모터 콘트롤러(2)와 모터(6)에 인코더(5)를 연결하여 구성된다.1 is a configuration diagram of a conventional electrode balance measuring device. In the conventional electrode balance measuring device, as shown in FIG. 1, the motor controller 2 is connected to the host controller 1, the position switch 3 and the brake 4 are connected to the motor controller 2, The motor 6 is connected to the amplification and linkage unit 7 to the power supply unit 8, and the encoder 5 is connected to the motor controller 2 and the motor 6.
따라서 종래의 전극평형 측정장치는 모터(6)와 인코더(5)의 상호작용으로 두전극간의 거리만을 수치화하므로 두전극간의 평형을 즉각적으로 확인할 수 없고, 반응기를 열어 하부전극에 푸디 볼(Puddy Ball)을 놓고 반응기를 닫은 후 원하는 갭(Gap)거리를 주어 이동시킨 후 반응기를 열어 푸디 볼의 간격을 측정하므로서 평형상태를 확인하였다.Therefore, the conventional electrode balance measuring device quantifies only the distance between the two electrodes by the interaction of the motor 6 and the encoder 5, so that the equilibrium between the two electrodes cannot be immediately confirmed, and the Puddy Ball is opened on the lower electrode by opening the reactor. ), The reactor was closed, and then moved to give the desired gap distance, and the reactor was opened to check the equilibrium state by measuring the distance of the footy ball.
그러나 전극평형 상태 확인시 식각 반응기를 열어 전극의 틀어짐을 확인해야 하므로 즉각적인 확인이 이루어지지 않고 식각반응기를 대기에 노출시키는 경우 다시 정상화 하는데 상당한 시간이 소요되므로 제품생산에 많은 지장을 초래하는 문제점이 있었다.However, when checking the electrode equilibrium, it is necessary to check the dislocation of the electrode by opening the etching reactor. Therefore, when the etching reactor is exposed to the atmosphere, it takes a long time to normalize again, which causes problems in product production. .
상기 문제점을 개선하기 위해 본 고안은 상부전극의 네 개의 모서리에 발공소자를 부착시키고 웨이퍼가 닿는 하부전극의 네 개의 모서리에 수광소자를 부착시켜 발생되는 빛의 양과 강도를 측정함으로써 전극간의 틀어짐을 확인할 수 있도록 하기 위한 전극평형 측정장치를 제공함에 그 목적이 있다.In order to improve the above problems, the present invention checks the distortion between the electrodes by measuring the amount and intensity of light generated by attaching the pore element to the four corners of the upper electrode and the light receiving element to the four corners of the lower electrode to which the wafer touches. It is an object of the present invention to provide an electrode balance measuring apparatus for the purpose.
상기 목적을 달성하기 위해 본 고안은 상부전극에 부착된 발광소자, 상기 발광소자에 대응되는 하부전극의 위치에 부착되어 상기 발광소자로부터 발산된 빛을 감지하는 수광소자, 및 상기 수광소자로부터 출력되는 신호에 따라 경보신호를 출력하도록 하는 경보 출력 수단으로 구성되는 것을 특징으로 한다.In order to achieve the above object, the present invention includes a light emitting device attached to an upper electrode, a light receiving device attached to a position of a lower electrode corresponding to the light emitting device, for detecting light emitted from the light emitting device, and outputted from the light receiving device. Alarm output means for outputting an alarm signal according to the signal.
이하 첨부한 도면을 참조하여 본 고안의 일실시예를 상세히 설명한다.Hereinafter, an embodiment of the present invention will be described in detail with reference to the accompanying drawings.
제2도는 본 고안에 의한 전극평형 측정장치의 구성도이고, 제3도는 본 고안이 적용된 상부 및 하부전극의 구조도이다.2 is a configuration diagram of an electrode balance measuring apparatus according to the present invention, Figure 3 is a structural diagram of the upper and lower electrodes to which the present invention is applied.
본 고안에 의한 전극평형 측정장치는 제2도에 도시한 바와 같이 발광소자(18), 수광소자(16), 및 증폭기(U1)(U2), 비교기(U3)(U4), 가변저항(VR1)(VR2)(VR3), 콘덴서(C1)(C2)(C3), 다이오드(D1), 제너 다이오드(ZD1), 및 저항(R1∼R2)으로 구성된 경보 출력 회로(19)로 구성된다.The electrode balance measuring device according to the present invention has a light emitting element 18, a light receiving element 16, and an amplifier U1 (U2), a comparator U3 (U4), and a variable resistor VR1 as shown in FIG. And an alarm output circuit 19 composed of VR2, VR3, capacitor C1, C2, C3, diode D1, zener diode ZD1, and resistors R1 to R2.
즉, 본 고안에 의한 전극평형 측정장치는 LED로 구현되고 상부전극에 부착된 발광소자(18)에 대응되는 하부전극의 위치에 Cds인 수광소자(16)를 부착시키고, 수광소자(16)에 수광소자(16)로부터 출력되는 신호에 따라 경보 신호를 출력하도록 하는 경보 출력 회로를 연결하여 구성한다.That is, the electrode balance measuring apparatus according to the present invention is implemented by the LED and attached to the light receiving element 16 of Cds at the position of the lower electrode corresponding to the light emitting element 18 attached to the upper electrode, and to the light receiving element 16 The alarm output circuit which outputs an alarm signal according to the signal output from the light receiving element 16 is connected and comprised.
경보 출력 회로(19)는 수광소자(16)의 일단에 기준간격을 조절하는 가변저항(VR1)을 통해 증폭기(U1)를 연결하고, 증폭기(U1)의 출력단에 기준간격을 조절하는 가변저항(VR2)의 일단을 연결하고, 가변저항(VR2)의 타단과 수광소자(16)의 타단에 증폭기(U2)를 연결하고, 증폭기(U2)의 출력단에 비교기(U3)(U4)의 (-)단자와 (+)단자를 연결하고, 비교기(U3)(U4)의 (+)단자와 (-)단자에 기준간격을 조절하는 가변저항(VR3)을 연결하여 구성한다.The alarm output circuit 19 connects the amplifier U1 to the one end of the light receiving element 16 through the variable resistor VR1 for adjusting the reference interval, and the variable resistor for adjusting the reference interval to the output terminal of the amplifier U1. Connect one end of the VR2, connect the amplifier U2 to the other end of the variable resistor VR2 and the other end of the light receiving element 16, and (-) the comparator U3 (U4) to the output end of the amplifier U2. The terminal is connected to the (+) terminal, and the variable resistor (VR3) for adjusting the reference gap is connected to the (+) and (-) terminals of the comparators (U3) and (U4).
상부전극(11)에 부착된 발광소자(18)에서 빛이 발산되면 수광소자(16)는 이를 검출하고 가변저항(VR1)(VR2)을 통해 기준간격이 조정된 증폭기(U1)(U2)에서 증폭시킨다.When light is emitted from the light emitting element 18 attached to the upper electrode 11, the light receiving element 16 detects it and in the amplifier U1 and U2 whose reference interval is adjusted through the variable resistor VR1 and VR2. Amplify.
증폭된 신호는 가변저항(VR3)에 의해 기준간격이 조정된 비교기(U3)(U4)에서 비교되어 기준간격 보다 크거나 작으면 경보회로를 통해 경보를 출력하게 된다.The amplified signal is compared by the comparator U3 (U4) whose reference interval is adjusted by the variable resistor VR3 and outputs an alarm through the alarm circuit if it is larger or smaller than the reference interval.
본 고안이 적용된 상부 및 하부전극은 제3도에 도시한 바와 같이 RF(Radio Frequency)가 인가되는 캐소오드인 상부전극(11)의 네 곳의 모서리에 발광소자(18)를 장착시키고, 웨이퍼(17)가 놓이고 접지되는 애노우드인 하부전극(12)의 네 곳의 모서리에 cds인 수광소자(16)를 장착시키고, 수광소자(16) 상부에 챔버내의 플라즈마 어택으로부터 수광소자(16)를 보호하기 위한 쿼츠(15)를 장착시켜 구성한다.In the upper and lower electrodes to which the present invention is applied, as shown in FIG. 3, the light emitting device 18 is mounted on four corners of the upper electrode 11, which is a cathode to which RF (Radio Frequency) is applied, and the wafer ( 17 is mounted on the four corners of the lower electrode 12, which is an anode placed and grounded, and the light receiving element 16, which is cds, is mounted on the light receiving element 16 from the plasma attack in the chamber. It is configured by mounting a quartz (15) for protection.
가스(Gas)는 배플(Baffle)(13)로부터 상부전극(11)의 가스 배출홀(Hole)(14)을 통해 하부전극(12)에 놓인 웨이퍼(17)를 에칭시킨다.The gas (Gas) etches the wafer 17 placed in the lower electrode 12 from the baffle 13 through the gas discharge hole 14 of the upper electrode 11.
이때 전극간의 평형을 측정하기 위해 발광소자(18)에서 빛을 발생시키면 수광소자(16)는 이를 감지하고 감지된 빛의 양에 따라 전극간의 틀어짐을 발견할 수 있다. 왜냐하면 상부전극(11)과 하부전극(12)의 간격에 따라 수광소자(16)에서 감지되는 빛의 양이 비례하고, 이에 따라 수광소자(16)의 저항도 비례하기 때문이다.In this case, when light is emitted from the light emitting device 18 to measure the balance between the electrodes, the light receiving device 16 may detect this and may find that the electrodes are distorted according to the detected amount of light. This is because the amount of light detected by the light receiving element 16 is proportional to the distance between the upper electrode 11 and the lower electrode 12, and thus the resistance of the light receiving element 16 is also proportional.
상기와 같이 구성된 전극평형 측정장치는 상부 및 하부전극의 네 개의 모서리에 설치되어 전극의 평형상태를 향상 확인할 수 있으므로 반응기를 열고 측정하는 데 소모되는 시간을 절약할 수 있는 효과가 있다.The electrode balance measuring device configured as described above is installed at four corners of the upper and lower electrodes, thereby improving the equilibrium state of the electrode, thereby reducing the time consumed to open and measure the reactor.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940003636U KR0110482Y1 (en) | 1994-02-26 | 1994-02-26 | Test apparatus for electrode balance of semiconductor etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019940003636U KR0110482Y1 (en) | 1994-02-26 | 1994-02-26 | Test apparatus for electrode balance of semiconductor etching apparatus |
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| Publication Number | Publication Date |
|---|---|
| KR950025908U KR950025908U (en) | 1995-09-18 |
| KR0110482Y1 true KR0110482Y1 (en) | 1998-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019940003636U KR0110482Y1 (en) | 1994-02-26 | 1994-02-26 | Test apparatus for electrode balance of semiconductor etching apparatus |
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| KR (1) | KR0110482Y1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100742126B1 (en) * | 2006-08-22 | 2007-07-24 | (주)에스비즈 | Device for detecting adjustment of gap between upper electrode and lower electrode in etching equipment |
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1994
- 1994-02-26 KR KR2019940003636U patent/KR0110482Y1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR950025908U (en) | 1995-09-18 |
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