JPWO2024005035A1 - - Google Patents

Info

Publication number
JPWO2024005035A1
JPWO2024005035A1 JP2024530896A JP2024530896A JPWO2024005035A1 JP WO2024005035 A1 JPWO2024005035 A1 JP WO2024005035A1 JP 2024530896 A JP2024530896 A JP 2024530896A JP 2024530896 A JP2024530896 A JP 2024530896A JP WO2024005035 A1 JPWO2024005035 A1 JP WO2024005035A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024530896A
Other languages
Japanese (ja)
Other versions
JPWO2024005035A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2024005035A1 publication Critical patent/JPWO2024005035A1/ja
Publication of JPWO2024005035A5 publication Critical patent/JPWO2024005035A5/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • H01J37/32724Temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/3266Magnetic control means
    • H01J37/32669Particular magnets or magnet arrangements for controlling the discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32926Software, data control or modelling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/32935Monitoring and controlling tubes by information coming from the object and/or discharge
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
JP2024530896A 2022-06-30 2023-06-27 Pending JPWO2024005035A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022106263 2022-06-30
PCT/JP2023/023874 WO2024005035A1 (ja) 2022-06-30 2023-06-27 プラズマ処理方法及びプラズマ処理装置

Publications (2)

Publication Number Publication Date
JPWO2024005035A1 true JPWO2024005035A1 (https=) 2024-01-04
JPWO2024005035A5 JPWO2024005035A5 (https=) 2026-04-13

Family

ID=89382300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024530896A Pending JPWO2024005035A1 (https=) 2022-06-30 2023-06-27

Country Status (6)

Country Link
US (1) US20250149316A1 (https=)
JP (1) JPWO2024005035A1 (https=)
KR (1) KR20250029901A (https=)
CN (1) CN119487618A (https=)
TW (1) TW202420381A (https=)
WO (1) WO2024005035A1 (https=)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5451784A (en) * 1994-10-31 1995-09-19 Applied Materials, Inc. Composite diagnostic wafer for semiconductor wafer processing systems
US5801386A (en) * 1995-12-11 1998-09-01 Applied Materials, Inc. Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using same
WO2000068986A1 (fr) * 1999-05-07 2000-11-16 Tokyo Electron Limited Procédé et appareil de traitement sous vide
JP4175456B2 (ja) 2002-03-26 2008-11-05 株式会社 東北テクノアーチ オンウエハ・モニタリング・システム
US7829468B2 (en) * 2006-06-07 2010-11-09 Lam Research Corporation Method and apparatus to detect fault conditions of plasma processing reactor
US10916411B2 (en) * 2018-08-13 2021-02-09 Tokyo Electron Limited Sensor-to-sensor matching methods for chamber matching

Also Published As

Publication number Publication date
KR20250029901A (ko) 2025-03-05
WO2024005035A1 (ja) 2024-01-04
CN119487618A (zh) 2025-02-18
US20250149316A1 (en) 2025-05-08
TW202420381A (zh) 2024-05-16

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Legal Events

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