JPWO2023238745A5 - - Google Patents

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Publication number
JPWO2023238745A5
JPWO2023238745A5 JP2024526395A JP2024526395A JPWO2023238745A5 JP WO2023238745 A5 JPWO2023238745 A5 JP WO2023238745A5 JP 2024526395 A JP2024526395 A JP 2024526395A JP 2024526395 A JP2024526395 A JP 2024526395A JP WO2023238745 A5 JPWO2023238745 A5 JP WO2023238745A5
Authority
JP
Japan
Prior art keywords
gate
nitride semiconductor
semiconductor device
gate electrode
angle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024526395A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2023238745A1 (cg-RX-API-DMAC7.html
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/020198 external-priority patent/WO2023238745A1/ja
Publication of JPWO2023238745A1 publication Critical patent/JPWO2023238745A1/ja
Publication of JPWO2023238745A5 publication Critical patent/JPWO2023238745A5/ja
Pending legal-status Critical Current

Links

JP2024526395A 2022-06-06 2023-05-31 Pending JPWO2023238745A1 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022091655 2022-06-06
PCT/JP2023/020198 WO2023238745A1 (ja) 2022-06-06 2023-05-31 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2023238745A1 JPWO2023238745A1 (cg-RX-API-DMAC7.html) 2023-12-14
JPWO2023238745A5 true JPWO2023238745A5 (cg-RX-API-DMAC7.html) 2025-02-13

Family

ID=89118274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024526395A Pending JPWO2023238745A1 (cg-RX-API-DMAC7.html) 2022-06-06 2023-05-31

Country Status (2)

Country Link
JP (1) JPWO2023238745A1 (cg-RX-API-DMAC7.html)
WO (1) WO2023238745A1 (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN118299415A (zh) * 2024-03-29 2024-07-05 厦门市三安集成电路有限公司 功率器件和功率器件的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09260672A (ja) * 1996-03-25 1997-10-03 Toshiba Corp 薄膜半導体装置及び液晶表示装置
JP4285120B2 (ja) * 2003-07-10 2009-06-24 セイコーエプソン株式会社 半導体装置、及び半導体装置の製造方法
WO2022113536A1 (ja) * 2020-11-26 2022-06-02 ローム株式会社 窒化物半導体装置およびその製造方法

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