JPWO2023203599A1 - - Google Patents

Info

Publication number
JPWO2023203599A1
JPWO2023203599A1 JP2024515747A JP2024515747A JPWO2023203599A1 JP WO2023203599 A1 JPWO2023203599 A1 JP WO2023203599A1 JP 2024515747 A JP2024515747 A JP 2024515747A JP 2024515747 A JP2024515747 A JP 2024515747A JP WO2023203599 A1 JPWO2023203599 A1 JP WO2023203599A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024515747A
Other languages
Japanese (ja)
Other versions
JPWO2023203599A5 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023203599A1 publication Critical patent/JPWO2023203599A1/ja
Publication of JPWO2023203599A5 publication Critical patent/JPWO2023203599A5/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
JP2024515747A 2022-04-18 2022-04-18 Pending JPWO2023203599A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/018020 WO2023203599A1 (ja) 2022-04-18 2022-04-18 窒化物半導体紫外線発光素子

Publications (2)

Publication Number Publication Date
JPWO2023203599A1 true JPWO2023203599A1 (de) 2023-10-26
JPWO2023203599A5 JPWO2023203599A5 (de) 2024-07-31

Family

ID=88419391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024515747A Pending JPWO2023203599A1 (de) 2022-04-18 2022-04-18

Country Status (3)

Country Link
JP (1) JPWO2023203599A1 (de)
TW (1) TW202343828A (de)
WO (1) WO2023203599A1 (de)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3754732B1 (de) * 2018-02-14 2023-04-12 Soko Kagaku Co., Ltd. Nitridhalbleiter mit uv-lichtemittierendem element
JP7406633B2 (ja) * 2020-06-24 2023-12-27 日機装株式会社 窒化物半導体紫外線発光素子及びその製造方法
JP7406632B2 (ja) * 2020-06-24 2023-12-27 日機装株式会社 窒化物半導体紫外線発光素子
CN115868033A (zh) * 2020-07-07 2023-03-28 创光科学株式会社 氮化物半导体紫外线发光元件及其制造方法
JP7421657B2 (ja) * 2020-08-21 2024-01-24 日機装株式会社 窒化物半導体紫外線発光素子
US20230307578A1 (en) * 2020-09-17 2023-09-28 Nikkiso Co., Ltd. Nitride Semiconductor Ultraviolet Light Emitting Element

Also Published As

Publication number Publication date
WO2023203599A1 (ja) 2023-10-26
TW202343828A (zh) 2023-11-01

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Legal Events

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