JPWO2023063391A1 - - Google Patents

Info

Publication number
JPWO2023063391A1
JPWO2023063391A1 JP2023554618A JP2023554618A JPWO2023063391A1 JP WO2023063391 A1 JPWO2023063391 A1 JP WO2023063391A1 JP 2023554618 A JP2023554618 A JP 2023554618A JP 2023554618 A JP2023554618 A JP 2023554618A JP WO2023063391 A1 JPWO2023063391 A1 JP WO2023063391A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023554618A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023063391A1 publication Critical patent/JPWO2023063391A1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/01—Control of temperature without auxiliary power
    • G05D23/13—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures
    • G05D23/1306—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids
    • G05D23/132—Control of temperature without auxiliary power by varying the mixing ratio of two fluids having different temperatures for liquids with temperature sensing element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Control Of Temperature (AREA)
  • Heat-Pump Type And Storage Water Heaters (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2023554618A 2021-10-15 2022-10-13 Pending JPWO2023063391A1 (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021169232 2021-10-15
PCT/JP2022/038217 WO2023063391A1 (ja) 2021-10-15 2022-10-13 温度制御装置、基板処理装置および液量制御方法

Publications (1)

Publication Number Publication Date
JPWO2023063391A1 true JPWO2023063391A1 (enExample) 2023-04-20

Family

ID=85988722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023554618A Pending JPWO2023063391A1 (enExample) 2021-10-15 2022-10-13

Country Status (5)

Country Link
US (1) US20240222169A1 (enExample)
JP (1) JPWO2023063391A1 (enExample)
KR (1) KR20240089420A (enExample)
CN (1) CN118077038A (enExample)
WO (1) WO2023063391A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025074905A1 (ja) * 2023-10-03 2025-04-10 東京エレクトロン株式会社 基板支持アセンブリ、基板処理装置、及び基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001066029A (ja) * 1999-08-25 2001-03-16 Toshiba Corp 極低温冷却システム
JP2007026157A (ja) * 2005-07-19 2007-02-01 Tokyo Electron Ltd 脈動軽減装置及び検査装置
JP2008116199A (ja) * 2007-10-26 2008-05-22 Tokyo Electron Ltd 熱媒体循環装置及びこれを用いた熱処理装置
JP2014063972A (ja) * 2012-08-29 2014-04-10 Tokyo Electron Ltd プラズマエッチング装置及び制御方法
JP2014127534A (ja) * 2012-12-25 2014-07-07 Kelk Ltd 循環冷却加熱装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008292026A (ja) 2007-05-23 2008-12-04 Ats Japan Corp 恒温維持装置。
JP6990058B2 (ja) 2017-07-24 2022-01-12 伸和コントロールズ株式会社 温度制御装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001066029A (ja) * 1999-08-25 2001-03-16 Toshiba Corp 極低温冷却システム
JP2007026157A (ja) * 2005-07-19 2007-02-01 Tokyo Electron Ltd 脈動軽減装置及び検査装置
JP2008116199A (ja) * 2007-10-26 2008-05-22 Tokyo Electron Ltd 熱媒体循環装置及びこれを用いた熱処理装置
JP2014063972A (ja) * 2012-08-29 2014-04-10 Tokyo Electron Ltd プラズマエッチング装置及び制御方法
JP2014127534A (ja) * 2012-12-25 2014-07-07 Kelk Ltd 循環冷却加熱装置

Also Published As

Publication number Publication date
US20240222169A1 (en) 2024-07-04
CN118077038A (zh) 2024-05-24
WO2023063391A1 (ja) 2023-04-20
KR20240089420A (ko) 2024-06-20

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Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20250214

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20260303