JPWO2022259448A1 - - Google Patents
Info
- Publication number
- JPWO2022259448A1 JPWO2022259448A1 JP2023526743A JP2023526743A JPWO2022259448A1 JP WO2022259448 A1 JPWO2022259448 A1 JP WO2022259448A1 JP 2023526743 A JP2023526743 A JP 2023526743A JP 2023526743 A JP2023526743 A JP 2023526743A JP WO2022259448 A1 JPWO2022259448 A1 JP WO2022259448A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/022054 WO2022259448A1 (ja) | 2021-06-10 | 2021-06-10 | 半導体レーザおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022259448A1 true JPWO2022259448A1 (enrdf_load_stackoverflow) | 2022-12-15 |
| JP7709640B2 JP7709640B2 (ja) | 2025-07-17 |
Family
ID=84426005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023526743A Active JP7709640B2 (ja) | 2021-06-10 | 2021-06-10 | 半導体レーザ |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7709640B2 (enrdf_load_stackoverflow) |
| WO (1) | WO2022259448A1 (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2025037387A1 (ja) * | 2023-08-15 | 2025-02-20 | 日本電信電話株式会社 | 半導体レーザ |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171173A (ja) * | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
| WO2020145128A1 (ja) * | 2019-01-08 | 2020-07-16 | 日本電信電話株式会社 | 半導体光素子 |
| WO2021005700A1 (ja) * | 2019-07-09 | 2021-01-14 | 日本電信電話株式会社 | 半導体光素子 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4422597B2 (ja) * | 2004-12-02 | 2010-02-24 | 富士通株式会社 | 半導体レーザ及びその製造方法 |
| JP2006330104A (ja) * | 2005-05-23 | 2006-12-07 | Nippon Telegr & Teleph Corp <Ntt> | 導波路型フィルタおよびそれを用いた半導体レーザ素子 |
| KR20130003913A (ko) * | 2011-07-01 | 2013-01-09 | 한국전자통신연구원 | 비대칭 결합계수를 갖는 분포 궤환형 레이저 다이오드 및 그것의 제조 방법 |
-
2021
- 2021-06-10 WO PCT/JP2021/022054 patent/WO2022259448A1/ja not_active Ceased
- 2021-06-10 JP JP2023526743A patent/JP7709640B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016171173A (ja) * | 2015-03-12 | 2016-09-23 | 日本電信電話株式会社 | 半導体光素子 |
| WO2020145128A1 (ja) * | 2019-01-08 | 2020-07-16 | 日本電信電話株式会社 | 半導体光素子 |
| WO2021005700A1 (ja) * | 2019-07-09 | 2021-01-14 | 日本電信電話株式会社 | 半導体光素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022259448A1 (ja) | 2022-12-15 |
| JP7709640B2 (ja) | 2025-07-17 |
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